CN114868262A - 用于数据通信的高速及多触点发光二极管 - Google Patents
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Abstract
LED可包含第三触点,例如以增加所述LED的操作速度。具有所述第三触点的所述LED可用于光学通信系统中,例如芯片到芯片光学互连件。
Description
技术领域
本发明大体涉及发光二极管(LED),且更特定来说,涉及用于数据通信的高速LED。
背景技术
激光由于其窄线宽、单空间模式输出及高速特性而在光学通信中趋于占据主导地位。激光的窄线宽意味着高速信号可长距离通过色散介质而不加宽脉冲。长距离光纤链路经常受到色散限制,且因此窄线宽激光可为长距离光纤链路所必需的。激光的单空间模式也相对容易耦合到单模光纤。
激光的受激发射也可允许高调制速度。直接调制的光链路可能够容易以25Gb/s运行,并潜在地使用PAM4调制载送50Gb/s的信息。
然而,激光的使用可给非常短距离的光学通信(例如芯片到芯片通信)带来困难。
发明内容
在一些实施例中,一种用于将由处理器提供的信息传送到所述处理器的另一区域或多芯片模块中的另一模块的光学通信系统,其包括:LED,其与所述处理器相关联;LED驱动器,其用于激活所述LED以基于从所述处理器提供给所述LED驱动器的数据产生光;检测器,其用于使用所述光执行光电转换;以及光学波导,其光学耦合所述LED与所述检测器;其中所述LED包括:具有包含量子阱的基极的双极结晶体管(BJT)。在一些实施例中,所述BJT的发射极包括AlGaN。
在一些实施例中,一种用于将由处理器提供的信息传送到所述处理器的另一区域或多芯片模块中的另一模块的光学通信系统,所述光学通信系统包括:LED,其与所述处理器相关联;LED驱动器,其用于调制所述LED的输出光学功率,使得所述LED将基于从所述处理器提供给所述LED驱动器的数据产生光;检测器,其用于使用所述光执行光电转换,所述检测器例如具有由入射到所述检测器上的光学功率调制的电输出;以及光学波导,其将所述LED与所述检测器光学耦合;其中所述LED包括:具有金属氧化物半导体(MOS)结构的p-n结。
在审阅本公开后将更全面地理解本发明的这些及其它方面。
附图说明
图1A展示根据本发明的方面的经制造成具有额外触点的电可控LED,图1B展示LED的导通状态的带图,且图1C展示LED的关断状态的带图。
图2展示根据本发明的方面的经制造成具有额外触点及AlGaN发射极的电可控LED。
图3展示根据本发明的方面的具有额外触点的LED结构,所述额外触点将p-n结与MOS结构组合,所述MOS结构可扫出少数载子,但将其收集在积累区中。
图4展示根据本发明的方面的包含横向积累区的具有额外触点的LED结构。
图5展示根据本发明的方面的在本文不同地讨论的使用LED的实例。
具体实施方式
激光的特性可对非常短距离的光学通信(例如芯片到芯片通信)不那么重要。在一些实施例中,微LED(尤其是针对高调制速度优化的结构)用于将光耦合到波导中,例如,如关于图5所讨论的。在一些实施例中,使用微LED提供芯片之间的高度并行通信,例如在插入器上或通过3D光学结构,例如包含光学波导及/或使用光学元件(例如透镜及全息图)的自由空间光学传播的光学结构。基于GaN的微LED已被开发用于显示应用,且已经开发用于将此类装置安装在硅CMOS或玻璃上多晶硅背板上的封装生态系统。通过相对较小的修改,此封装生态系统的元件可用于将IC互连以进行芯片到芯片通信。
在一些实施例中,微LED与半导体激光器(SL)的区别如下:(1)微LED不具有光学谐振器结构;(2)来自微LED的光学输出几乎完全是自发发射,而来自SL的输出主要是受激发射;(3)来自微LED的光学输出具有时间及空间非相干性,而来自SL的光学输出具有显著的时间及空间相干性;(4)微LED被设计成驱动低至零的最小电流,而SL被设计成驱动低至最小阈值电流,其通常至少为1mA。在一些实施例中,微LED与标准LED的区别在于:(1)具有小于100微米乘以100微米(在一些实施例中小于100um x 100um)的发射区;(2)通常在顶部及底部表面上有正及负触点,而标准LED通常在单个表面上具有正及负触点两者;(3)通常以大阵列用于显示及互连应用。
在一些实施例中,对于芯片到芯片通信,距离如此短以至于色散不一定是问题。简单的计算指示,对于具有在400nm到450nm的范围内的中心波长和20nm的光谱宽度的GaNLED,如果LED以4Gb/s调制且传播通过掺杂SiO2波导或光纤,那么波导或光纤可长达5米,色散功率损失小于2dB。由于多芯片模块(MCM)内或跨PC板的芯片到芯片通信距离通常小于几十厘米,所以LED的较宽光谱宽度可能不是问题。此外,我们甚至可以使用相对容易将来自LED的输出光耦合到其中的高度多模式波导。由于距离较短,多模式波导的模色散可同样不是问题。在4Gb/s的信号速率下,即使在具有0.67的NA的10%芯包层折射率阶跃的波导中,波导长度可长达85cm,具有较小色散功率损失;较小的芯包层折射率阶跃通常具有较长可达性。因此,在许多实施例中,宽光谱LED及多模式波导对于芯片到芯片通信是足够的。
此外,在各种实施例中,微LED以非常小的尺寸制造,具有小于2um的装置尺寸。此小模式具有非常高的本征亮度(即,低扩展度),并且通常可容易地耦合到多模式波导。尽管输出通常是朗伯式的,但适当地使用反射器,在一些实施例中使用微透镜,并且在一些实施例中将微LED嵌入波导中,耦合效率可为30%或更高。微LED通常具有类似甚至超过激光器的较高量子效率。由于在短距离上,即使在蓝色或绿色波长下也不会遭受太多的损耗,因此不需要太多的发射功率,并且在一些实施例中,以10uA左右运行的小微LED可为足够的。
一般来说,微LED受到载子寿命的限制(且如果微LED太大,则受到电容的限制),并且通常不能达到高速激光的调制速度。然而,微处理器及逻辑中的时钟速度似乎达到几Gb/s的限制,且进出IC的数据通常使用串行器/解串器(SERDES)来加快速度以产生较少数目的高速通道。例如,商业上可用的开关IC目前可以几GHz的时钟速度运行,但以256或512个通道进行通信,每通道50Gb/s或100Gb/s,其中每一通道具有相关联的SERDES。这些SERDES消耗大量的电功率,且如果开关IC替代地使用更多的低速通道,那么可消除这些SERDES。光学器件允许这种并行性,并即使在较慢的通道速度下,通过拥有更多数目的通道实现较高的吞吐量。然而,以尽可能高的调制速度操作的LED可为优选的。
此外,GaN微LED与激光器相比的较大优势在于其没有显著的阈值电流。虽然量子效率是驱动电流的函数,但微LED没有离散的阈值电平,而且微LED可在远低于激光器的电流下运行。鉴于其对显示器的有用性,存在用于在各种衬底上安装、连接及测试微LED的大量基础设施。且GaN微LED通常具有远优于半导体激光器的高温性能及可靠性。
典型地,对显示应用优化的GaN微LED包括具有p-i-n掺杂分布的圆柱形或类圆柱形结构。通过正向偏置二极管且将来自n-区的电子及来自p-区的空穴注入到含有InGaN量子阱的中间本征区而接通LED。p触点在结构的一侧上,而n触点在另一侧上。在许多应用中,所述装置安装在芯片上,其中“底”侧与芯片电接触,且“顶”侧与共同引线(例如接地或电源引线)接触。顶侧触点可为透明导体,例如氧化铟锡(ITO)。在微LED中,垂直结构通常是优选的,但也有横向结构,或与p-触点邻近的n-触点。在任何情况下,不针对速度而优化此结构,这仅仅是因为显示器通常以60Hz或120Hz帧率运行,而不是以Gb/s运行。
我们可以进行改变以针对速度优化结构。一般来说,微LED受到LED的电容及载子复合时间(或扩散电容)的限制。电容与驱动输出阻抗形成RC电路,并在高频下引起滚降。载子寿命意味着LED关断需要时间,因为即使在电脉冲结束后,我们也必须等待少数注入的载子复合以停止发光。由于微LED的尺寸较小,其电容(通常只有几毫微微法拉)不会显著地限制装置的调制速度;相反,调制速度通常受到载子寿命的限制。
一般来说,微LED的速度随着注入电流密度而增加。载子可以三种方式在LED中复合。在低电流电平下,复合是由陷阱介导的(SRH复合)。在较高的电流密度下,这些陷阱变得饱和,且LED的量子效率提高,因为辐射复合占主导地位。随着载子密度增加,此辐射复合速率加快,从而增加辐射效率,且降低载子寿命。因此,微LED越难驱动(例如,电流密度越大),其操作越快。在较高电流密度下,例如俄歇复合的非线性非辐射机制进一步降低载子寿命,但这些非辐射机制也会降低辐射量子效率。对于用高电流密度驱动的小直径快速微LED,陷阱因为其饱和而相对不重要,且非线性非辐射复合速率对比辐射复合速率的相对重要性确定量子效率。
可对微LED进行结构改变以改进速度。在一些实施例中,电可控LED可经制造成具有额外触点。一种可能的配置是使光发射发生在呈双极结晶体管的一般形式的LED的基极中,所述双极结晶体管具有基极、发射极及集电极区,每一区具有相关联的电触点。基极-发射极结可正向偏置,其中发射极将载子注入基极并复合,使得光从基极区发射。对于光发射,晶体管可偏置到饱和,其中集电极不偏置。为了快速关断LED,集电极经反向偏置,从而将少数载子扫出基极。图1A展示此结构且在图1B及1C中分别展示导通状态及关断状态的带图。
如图1A所展示,在一些实施例中,LED包含n+GaN发射极111及n-GaN集电极。p-GaN基极区113位于发射极与集电极之间。基极区包含量子阱。
图1B的带图是针对处于导通状态的图1A的LED。图1B的带图展示价带133a上方的导带131a。带分别跨发射极区121、基极区123及集电极区125延伸。导带与价带之间的带隙跨每一区是大体恒定的,其中能级通常在发射极与基极区之间的复合区中增加,且能级在集电极区中稍微下降。在“导通”状态下,电子从发射极区注入137a到大部分电子在其处复合的基极区;剩下的未复合的电子从基极区扫出139a进入集电极区,如图1B中相对尺寸的箭头所指示。
图1C的带图是针对处于“关断”状态下的图1A的LED。与图1B的带图一样,图1C的带图展示在价带133b上方的导带131b,其跨发射极区121、基极区123及集电极区125延伸。在“关断”状态下,电子从发射极区注入137b到基极区。然而,与在“导通”状态下不同,在“关断”状态下,很大一部分电子从基极区扫出139b进入集电极区,同样如图1C中相对尺寸的箭头所指示。
进一步的增强将是用AlGaN制造发射极区以实现到基极区中的更好注入。在一些实施例中,AlGaN充当n区上的势垒以进一步增强载子到p掺杂基极区中的注入,并防止空穴注入到n型区中。在3D中,所述结构可呈图2的示意性横截面中所展示的形式。
图2展示衬底211的顶部上的n+GaN缓冲区及子集电极层213。衬底可为硅、GaN或最常用的蓝宝石。n-GaN集电极层215位于子集电极层的第一部分的顶部上,而集电极电触点227位于子集电极层的第二部分的顶部上。p-基极区层217位于集电极层的顶部上。在许多实施例中,p-基极区层包含一或多个量子阱。在操作中,可由基极区层发射光。AlGaN n+发射极层219位于基极区层的第一部分的顶部上,而基极电触点229位于基极层的第二部分的顶部上。AlGaN n+发射极层分离基极区层与位于AlGaN n+发射极层顶部上的n+GaN触点层221。发射极电触点223位于n+GaN触点层的一部分的顶部上。
基极-发射极结可通过施加电压229而被正向偏置,从而将空穴注入基极。但基极中的电子浓度由基极-集电极电压控制,其中负偏置会扫出载子。因此,基极-集电极结将被反向偏置,并且将施加调制信号231。此结构将比LED快得多,因为关断时间不再受本征载子寿命的限制,而是由基极-集电极中的电场从基极区移除载子的速度确定。然而,此加速可以降低量子效率为代价,因为从基极区移除的载子不能复合以产生光子。
替代结构是将p-n结与可将少数载子从基极区扫入积累区的MOS结构组合。横向上,如果在平坦表面上制造,那么所述结构可呈图3的示意性横截面中所展示的形式。在图3中,在衬底311上展示n型GaN缓冲层313。p基极区层325位于n型GaN层的第一部分的顶部上,其中电触点325位于n型GaN层的第二部分的顶部上。n型GaN(在一些实施例中,潜在地在其与基极层之间具有AlGaN势垒层)将电子注入p-基极区。这些少数电子会在基极区中与本地空穴群体复合以产生光。
p+GaN触点层位于p-基极区层的第一部分的顶部上,并且由电介质(例如氮化铝(AlN)317)提供的顶部具有电触点321的金属氧化物半导体(MOS)结构位于p-基极区层的第二部分的顶部上。MOS结构靠近复合区,其中栅极上的正偏置将把注入载子拉入MOS电介质下的积累区319中并关断光发射。去除此电压或使其略微为负将迫使载子回到基极区,其中载子将复合并发光。因此,注入电子不会从系统中移除,而是被“循环”,以获得比晶体管结构更高的量子效率。
图3中的结构通常具有靠近基极区的积累区,因为装置的调制速度与载子可在两个区之间扫过的速度有关。事实上,响应时间通常可取决于基极区与积累区的分离距离大小,以及电场(迁移率)或饱和速度,vsat。在GaN中,电子的饱和速度为1.4×107cm/s,因此我们可使用小于10um的间距来实现至少4GHz的调制速度。这很容易使用直径在2um范围内的微LED实现。
图4展示替代MOS装置几何形状,其中MOS电介质层425围绕微LED的圆周形成,并且可带来更高的速度。在示意图中,LED接合到提供n-触点的金属基底411。n GaN缓冲层313位于金属基底上。也接合到金属基底的绝缘层415至少位于缓冲层的相对侧上。绝缘层略微高于缓冲层的顶部延伸,在其上可发现p-GaN基极区层315。p+GaN层320位于基极层的顶部上。p触点423(例如透明p触点)位于p+GaN层的顶部上。MOS电介质层围绕基极区层的侧形成,且也围绕p+GaN层的侧形成,其中金属化427围绕MOS电介质层的外侧。积累区419位于基极区中的邻近AlN的部分中。绝缘层415例如通过围绕n GaN缓冲层沉积MOS电介质及金属化来充当放置止挡件。电介质层及金属化围绕侧的横向沉积可被视为MOS结构。
图5展示使用LED的实例,其可为微LED 515,如本文以各种方式讨论。在图5中,硅处理器511对数据执行各种操作或用数据执行各种操作。例如,硅处理器可对数据执行计算,可执行切换功能,或可执行其它功能。硅处理器将至少一些数据提供给LED驱动器513,其中LED驱动器激活微LED以产生具有由至少一些数据调制的功率电平的光。所产生的光提供给光学耦合器517,光学耦合器517将光传递到光学传播介质519中。在一些实施例中,可为例如波导的光学传播介质可用于将光从硅处理器的一个区域转移到硅处理器的另一区域。在其它实施例中,光学传播介质可用于将光从硅处理器转移到例如在多芯片模块(图5中未展示)中的另一硅处理器、或存储器、或另一模块。光学传播介质可将光转移到另一光学耦合器521,后者又将光传递到检测器523(例如光电二极管),以用于光电转换。包含至少一些数据的来自检测器输出的电信号可由放大器525放大,并提供给硅处理器(或多芯片模块中的另一芯片)。在一些实施例中,微LED及检测器可个别地耦合到波导,及/或在一些实施例中,其可作为阵列并联耦合。光学波导除了将光及数据从一个位置转移到另一位置之外,还可将光分成两个或更多个输出,从而允许数据扇出。光学波导或介质也可执行将输出从一个接收器引导到另一接收器的某种切换。
微LED及检测器可个别耦合到波导,或可作为阵列并联耦合到波导。
尽管已关于各个实施例论述了本发明,但应认识到,本发明包括受本发明支持的新颖且不明显的权利要求。
Claims (10)
1.一种用于将由处理器提供的信息传送到所述处理器的另一区域或多芯片模块中的另一芯片的光学通信系统,其包括:
LED,其与所述处理器相关联;
LED驱动器,其用于激活所述LED以产生基于从所述处理器提供给所述LED驱动器的数据调制的光;
检测器,其用于使用所述光执行光电转换;及
光学波导,其光学耦合所述LED与所述检测器;
其中所述LED包括:
双极结晶体管(BJT),其具有包含量子阱的基极。
2.根据权利要求1所述的系统,其中所述BJT的发射极包括AlGaN。
3.根据权利要求2所述的系统,其中所述发射极具有n+掺杂。
4.根据权利要求1所述的系统,其中具有包含量子阱的基极的所述BJT包括:
n+GaN缓冲区及子集电极层,其在衬底上;
n-GaN集电极层,其在所述GaN缓冲区及子集电极层上;
所述基极,其位于所述n-GaN集电极层上,所述基极具有p-掺杂;
AlGaN n+发射极层,其在所述基极上;及
n-GaN触点层。
5.根据权利要求1所述的系统,其进一步包括:
另一LED,其与所述处理器的所述另一区域或所述多芯片模块中的另一芯片相关联;
另一LED驱动器,其用于激活所述另一LED以产生基于从所述处理器的所述另一区域或所述多芯片模块中的另一芯片提供给所述另一LED驱动器的数据调制的光;及
另一检测器,其用于使用来自所述另一LED的所述光执行光电转换;
其中所述另一LED包括:
另一双极结晶体管(BJT),其具有包含量子阱的基极。
6.一种用于将由处理器提供的信息传送到所述处理器的另一区域或多芯片模块中的另一模块的光学通信系统,其包括:
LED,其与所述处理器相关联;
LED驱动器,其用于激活所述LED以产生基于从所述处理器提供给所述LED驱动器的数据调制的光;
检测器,其用于使用所述光执行光电转换;及
光学波导,其光学耦合所述LED与所述检测器;
其中所述LED包括:
p-n结,其具有金属氧化物半导体(MOS)结构。
7.根据权利要求6所述的系统,其中具有MOS结构的所述p-n结包括:
n掺杂GaN缓冲层;
p-基极层,其位于所述n掺杂GaN缓冲层的至少一部分上;
p+GaN触点层,其位于所述p-基极层的第一部分上;
电介质层,其与所述p-基极层的第二部分接触;及
金属层,其与所述电介质层接触。
8.根据权利要求7所述的系统,其中所述电介质层位于所述p-基极层的第二部分上。
9.根据权利要求7所述的系统,其中所述p-基极层的所述第二部分位于所述p-基极层的至少一侧上。
10.根据权利要求6所述的系统,其进一步包括:
另一LED,其与所述处理器的所述另一区域或所述多芯片模块中的另一芯片相关联;
另一LED驱动器,其用于激活所述另一LED以产生基于从所述处理器的所述另一区域或所述多芯片模块中的另一芯片提供给所述另一LED驱动器的数据调制的光;及
另一检测器,其用于使用来自所述另一LED的所述光执行光电转换;
其中所述另一LED包括:
p-n结,其具有金属氧化物半导体(MOS)结构。
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FR3087941A1 (fr) * | 2018-10-31 | 2020-05-01 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Transistor bipolaire a emission lumineuse |
CN110190083A (zh) | 2019-04-09 | 2019-08-30 | 华南师范大学 | 高带宽GaN基垂直导电结构LED发光器件及制备方法 |
US10840408B1 (en) * | 2019-05-28 | 2020-11-17 | Vuereal Inc. | Enhanced efficiency of LED structure with n-doped quantum barriers |
CN114868262A (zh) * | 2019-11-18 | 2022-08-05 | 艾维森纳科技有限公司 | 用于数据通信的高速及多触点发光二极管 |
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2020
- 2020-11-18 CN CN202080088700.4A patent/CN114868262A/zh active Pending
- 2020-11-18 US US16/951,296 patent/US11791896B2/en active Active
- 2020-11-18 EP EP20889666.2A patent/EP4062460A4/en active Pending
- 2020-11-18 CN CN202080088740.9A patent/CN114846630A/zh active Pending
- 2020-11-18 WO PCT/US2020/061076 patent/WO2021102013A1/en unknown
- 2020-11-18 WO PCT/US2020/061101 patent/WO2021102034A1/en unknown
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2023
- 2023-09-12 US US18/465,924 patent/US20240072895A1/en active Pending
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US11418257B2 (en) | 2022-08-16 |
WO2021102034A1 (en) | 2021-05-27 |
EP4062459A1 (en) | 2022-09-28 |
EP4062459A4 (en) | 2024-02-28 |
US11791896B2 (en) | 2023-10-17 |
US20240072895A1 (en) | 2024-02-29 |
CN114846630A (zh) | 2022-08-02 |
WO2021102013A1 (en) | 2021-05-27 |
US20210152244A1 (en) | 2021-05-20 |
EP4062460A1 (en) | 2022-09-28 |
EP4062460A4 (en) | 2023-12-27 |
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