CN114864404A - Manufacturing process of SBR (styrene butadiene rubber) device for realizing charge coupling by 3 masks - Google Patents
Manufacturing process of SBR (styrene butadiene rubber) device for realizing charge coupling by 3 masks Download PDFInfo
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- CN114864404A CN114864404A CN202210416147.3A CN202210416147A CN114864404A CN 114864404 A CN114864404 A CN 114864404A CN 202210416147 A CN202210416147 A CN 202210416147A CN 114864404 A CN114864404 A CN 114864404A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 230000008878 coupling Effects 0.000 title claims abstract description 8
- 238000010168 coupling process Methods 0.000 title claims abstract description 8
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 8
- 229920003048 styrene butadiene rubber Polymers 0.000 title description 13
- 239000002174 Styrene-butadiene Substances 0.000 title description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 59
- 229920005591 polysilicon Polymers 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 16
- 150000002500 ions Chemical class 0.000 claims abstract description 11
- 210000000746 body region Anatomy 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 10
- 238000000137 annealing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Ceramic Engineering (AREA)
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- General Physics & Mathematics (AREA)
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- Manufacturing & Machinery (AREA)
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Abstract
The invention discloses a manufacturing process of an SBR device for realizing charge coupling by 3 masks, which comprises the following steps: forming a thin oxide layer; forming a body region; forming a thick oxide layer as a first mask; photoetching to form a groove; forming a field oxide layer; forming first polysilicon; setting a second mask, and etching the first polysilicon to make the top of the first polysilicon lower than the surface of the epitaxial layer; implanting source region ions by taking the thick oxide layer positioned between the trenches of the active region as a mask; depositing to form a first oxide layer; and isotropically etching the first oxide layer downwards to expose the epitaxial layer on the surface of the active region, forming an active region contact hole in the active region groove, and extending the active region contact hole into the second polysilicon. The whole manufacturing process can be completed by only needing 3 times of masks in the manufacturing process, and the masks are needed to be arranged when the groove is formed, the first polycrystalline silicon is formed and the metal electrode is formed respectively, so that the masks in the forming of a source region and a body contact region are saved, and the cost is saved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a manufacturing process of an SBR (styrene butadiene rubber) device for realizing charge coupling by 3 masks.
Background
The conventional manufacturing process of the charge-coupled SBR device is shown in fig. 1A to 1I, and includes the following steps:
providing a substrate 1, forming an epitaxial layer 2 on the substrate 1, and forming a thin oxide layer 3 on the surface of the epitaxial layer 2, as shown in fig. 1A;
setting a first mask, forming a groove by photoetching, and removing the first mask, wherein the groove comprises an active region groove 4-1 and a terminal region groove 4-2, as shown in FIG. 1B;
forming a field oxide layer 5 in the trench, as shown in fig. 1C;
filling the polysilicon and etching back to form a first polysilicon 6 in the trench, as shown in fig. 1D;
arranging a second mask 7, wherein the second mask 7 covers the terminal region, and etching the first polysilicon 6 in the active region, as shown in fig. 1E;
removing the second mask 7, and removing the oxide layer above the first polysilicon 6, as shown in fig. 1F;
forming a gate oxide layer 9 in the trench of the active region, filling a second polysilicon 10 and etching back, and implanting to form a body region 11, as shown in fig. 1G;
arranging a third mask 12, wherein the third mask 12 covers the terminal region, and implanting and forming a source region 13 in the active region, as shown in fig. 1H;
removing the third mask 12, forming a barrier layer 14 on the surface of the device, setting a fourth mask, photoetching the body contact region contact hole 15 and the metal contact hole 17, and injecting the body contact region 16 downwards, as shown in fig. 1I;
the fourth mask is removed, and the metal contact hole 17 is filled and the metal electrode is formed through the fifth mask. The above-mentioned method for forming the body contact region contact hole 15, the metal contact hole 17, the body contact region 16 and the metal electrode is a common technical means for those skilled in the art, and will not be described in detail herein.
Through the steps, in the manufacturing process of the traditional charge-coupled SBR device, at least 5 masks are required to realize the function of the device.
As is known, the cost of setting a mask once is very high, and the manufacturing cost of the whole device will be greatly increased every time a mask is set more than once. Therefore, on the premise of not influencing the performance of the device, if the setting times of the mask can be reduced, the manufacturing cost is greatly reduced.
Disclosure of Invention
The invention aims to provide a manufacturing process of an SBR device for realizing charge coupling by using a 3-time mask so as to solve the technical problem.
In order to achieve the above object, the present invention provides a manufacturing process of an SBR device for realizing charge coupling by using 3 masks, comprising the following steps:
providing a substrate, forming an epitaxial layer on the substrate, and forming a thin oxide layer on the surface of the epitaxial layer;
injecting downwards on the surface of the device and forming a body region on the surface of the epitaxial layer;
forming a thick oxide layer on the surface of the device as a first mask;
photoetching to form a groove, wherein the groove comprises an active region groove and a terminal region groove;
forming field oxide layers in the active region groove and the terminal region groove;
filling and etching polysilicon, and respectively forming first polysilicon in the active region trench and the terminal region trench;
setting a second mask, wherein the second mask covers the terminal region, and then etching the first polysilicon in the groove of the active region to enable the top of the first polysilicon to be lower than the surface of the epitaxial layer;
thinning a field oxide layer positioned above the first polysilicon in the groove of the active region, and thinning a thick oxide layer of the active region;
taking a thick oxide layer positioned between the trenches of the active region as a mask, and vertically injecting source region ions into the surface of the epitaxial layer of the active region downwards;
removing the field oxide layer above the first polysilicon in the active region groove, and removing the thin oxide layer and the thick oxide layer between the active region grooves;
removing the second mask, and forming a gate oxide layer above the first polysilicon in the active region groove;
filling and etching the polysilicon, forming second polysilicon in the active region groove, wherein the surface of the second polysilicon is lower than the top of the active region groove, and a concave area is formed between the surface of the second polysilicon and the top of the active region groove;
depositing a first oxidation layer on the surface of the device, and forming a gap area on the first oxidation layer above the active area groove;
and isotropically etching the first oxide layer downwards by adopting a contact hole self-alignment process to expose the first polycrystalline silicon in the groove of the terminal area and expose the epitaxial layer on the surface of the active area, and forming an active area contact hole in the groove of the active area, wherein the active area contact hole extends into the second polycrystalline silicon.
Preferably, the method further comprises the following steps: a body contact region is implanted and formed at the surface of the epitaxial layer between the active region trenches.
Preferably, the method further comprises the following steps: and continuing etching downwards, forming body contact area contact holes in the epitaxial layer between the active region grooves, deepening the depth of the active region contact holes, and then injecting and forming the body contact areas in the body contact area contact holes.
Preferably, the body contact region contact hole is formed by active region trench self-aligned etching.
Preferably, the method further comprises the following steps: and forming a metal electrode on the surface of the device, wherein the metal electrode is contacted with the second polysilicon through the contact hole of the active region, the metal electrode covers the active region and is contacted with the body contact region, and the metal electrode covers the terminal region and is contacted with the first polysilicon in the terminal region.
Preferably, after the first oxide layer is formed, the recess region is not filled.
Preferably, when the active region contact hole is formed, the barrier layer formed by the first oxide layer is left on the side wall of the top of the active region trench to protect the channel.
Preferably, when the gate oxide layer is formed on the first polysilicon in the active region trench, the source region ions form a source region.
Compared with the prior art, the invention has the following beneficial effects:
(1) compared with the traditional manufacturing process, the whole manufacturing process can be completed by only needing 3 times of masks in the manufacturing process, the masks are needed to be arranged when the groove is formed, the first polycrystalline silicon is formed and the metal electrode is formed respectively, the masks when the source region and the body contact region are formed are saved, and the cost is saved.
(2) According to the invention, the thinned thick oxide layer is used as a mask, and source region ions are implanted into the surface of the epitaxial layer of the active region, so that the mask used for implanting the source region ions is saved.
(3) The invention realizes the self-aligned etching of the body contact region by utilizing the height matching of the first oxide layer and the thick oxide layer, and omits a mask required by the original formation of the body contact region. Since the body contact region adopts a mask-free self-aligned process, the cell pitch of the device can be made smaller.
(4) According to the invention, when the position to be injected of the body contact region is formed, the contact hole of the active region can be formed simultaneously through the design of the depressed region of the active region, so that the step of forming another metal contact hole is omitted during the subsequent formation of the metal electrode.
(5) According to the invention, the high temperature generated when the grid oxide layer is formed is utilized, the annealing forming of the source region ions is realized, and the step of independently annealing to form the source region is omitted.
Drawings
FIGS. 1A to 1I are schematic flow charts of a process for fabricating a charge-coupled SBR device in the prior art;
fig. 2A to 2P are schematic flow charts of a manufacturing process of an SBR device with charge coupling realized by 3 masks according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 2A to 2P show a manufacturing process of a 3-mask charge-coupled SBR device according to this embodiment, which includes the following steps:
the method comprises the following steps: as shown in fig. 2A, a substrate 1 is provided, an epitaxial layer 2 is formed on the substrate 1, and a thin oxide layer 3 is formed on the surface of the epitaxial layer 2, wherein the thickness of the thin oxide layer 3 is 500A in this embodiment.
Step two: as shown in fig. 2B, a body region 11 is implanted down the surface of the device and formed at the surface of the epitaxial layer 2.
Step three: as shown in fig. 2C, a thick oxide layer 18 is formed on the device surface, and as a first mask, the thickness of the thick oxide layer 18 is 7000A in this embodiment.
Step four: as shown in fig. 2D, trenches are formed lithographically, including active region trenches 4-1 and termination region trenches 4-2, which leaves thick oxide layer 18, reducing one masking step.
Step five: as shown in fig. 2E, a field oxide layer 5 is formed in the active region trench 4-1 and the termination region trench 4-2, and the thickness of the field oxide layer 5 is 3000A in this embodiment.
Step six: as shown in fig. 2F, the polysilicon is filled and etched, and first polysilicon 6 is formed in the active region trench 4-1 and the termination region trench 4-2, respectively, and the surface of the first polysilicon 6 is flush with the surface of the device.
Step seven: as shown in fig. 2G, a second mask 7 is provided, the second mask 7 covers the termination region, and then the first polysilicon 6 in the active region trench 4-1 is etched to have its top lower than the surface of the epitaxial layer 2.
Step eight: as shown in fig. 2H, the field oxide layer 5 above the first polysilicon 6 in the active region trench 4-1 and the thick oxide layer of the active region are thinned by wet etching to reserve a position for vertically implanting source region ions 8 downward; in this embodiment, the field oxide layer 5 is thinned from 3000A to 500A, and the thick oxide layer of the active region is thinned from 7000A to 5000A.
Step nine: as shown in fig. 2I, source region ions 8 are implanted vertically downward into the surface of epitaxial layer 2 of the active region, using thick oxide layer 18 located between active region trenches 4-1 as a mask.
Step ten: as shown in fig. 2J, the field oxide layer 5 above the first polysilicon 6 in the active region trench 4-1 is removed, and the thin oxide layer 3 and the thick oxide layer 18 between the active region trenches 4-1 are removed, so that the epitaxial layer 2 of the active region is exposed, and the sidewall of the active region trench 4-1 above the first polysilicon 6 is exposed.
Step eleven: as shown in fig. 2K, the second mask 7 is removed and a gate oxide layer 9 is formed over the first polysilicon 6 within the active area trench 4-1. Since the process of forming the gate oxide layer 9 is a high temperature process, the source region ions 8 are directly annealed to form the source region 13 in this step, and the step of separately annealing to form the source region 13 is omitted.
Step twelve: as shown in fig. 2L, the polysilicon is filled and etched, a second polysilicon 10 is formed in the active area trench 4-1, the surface of the second polysilicon 10 is lower than the top of the active area trench 4-1, and a recess 19 is formed between the surface of the second polysilicon 10 and the top of the active area trench 4-1.
Step thirteen: as shown in fig. 2M, a first oxide layer 20 is deposited on the device surface, and the first oxide layer 20 above the active region trench 4-1 forms a void region 21 due to the existence of the recess region 19, wherein the thickness of the first oxide layer 20 is 3500A in this embodiment.
Fourteen steps: as shown in fig. 2N, the first oxide layer 20 is isotropically etched down to expose the first polysilicon 6 in the termination trench 4-2 and expose the epitaxial layer 2 on the surface of the active region, and an active region contact hole 22 is formed in the active region trench 4-1, the active region contact hole 22 extending into the second polysilicon 10. Due to the presence of the void region 21, the sidewalls of the top of the active region trench 4-1 leave a barrier layer 23 formed of the first oxide layer 20 when the active region contact hole 22 is formed.
A fifteenth step: as shown in fig. 2O, body contact regions 16 are implanted and formed at the surface of epitaxial layer 2 between active region trenches 4-1.
Sixthly, the steps are as follows: as shown in fig. 2P, a metal electrode 24 is formed on the device surface, the metal electrode 24 contacts the second polysilicon 10 through the active region contact hole 22, the metal electrode 24 covers the active region and contacts the body contact region 16, and the metal electrode 24 covers the termination region and contacts the first polysilicon 6 in the termination region.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (6)
1. A manufacturing process of an SBR device for realizing charge coupling by 3 masks is characterized by comprising the following steps:
providing a substrate, forming an epitaxial layer on the substrate, and forming a thin oxide layer on the surface of the epitaxial layer;
injecting downwards on the surface of the device and forming a body region on the surface of the epitaxial layer;
forming a thick oxide layer on the surface of the device as a first mask;
photoetching to form a groove, wherein the groove comprises an active region groove and a terminal region groove;
forming field oxide layers in the active region groove and the terminal region groove;
filling and etching polysilicon, and respectively forming first polysilicon in the active region trench and the terminal region trench;
setting a second mask, wherein the second mask covers the terminal region, and then etching the first polysilicon in the groove of the active region to enable the top of the first polysilicon to be lower than the surface of the epitaxial layer;
thinning a field oxide layer positioned above the first polysilicon in the groove of the active region, and thinning a thick oxide layer of the active region;
taking a thick oxide layer positioned between the trenches of the active region as a mask, and vertically injecting source region ions into the surface of the epitaxial layer of the active region downwards;
removing the field oxide layer above the first polysilicon in the active region groove, and removing the thin oxide layer and the thick oxide layer between the active region grooves;
removing the second mask, and forming a gate oxide layer above the first polysilicon in the active region groove;
filling and etching the polysilicon, forming second polysilicon in the active region groove, wherein the surface of the second polysilicon is lower than the top of the active region groove, and a concave area is formed between the surface of the second polysilicon and the top of the active region groove;
depositing a first oxidation layer on the surface of the device, and forming a gap area on the first oxidation layer above the active area groove;
and isotropically etching the first oxide layer downwards to expose the first polycrystalline silicon in the groove of the terminal area and expose the epitaxial layer on the surface of the active area, and forming an active area contact hole in the groove of the active area, wherein the active area contact hole extends into the second polycrystalline silicon.
2. The manufacturing process according to claim 1, further comprising:
a body contact region is implanted and formed at the surface of the epitaxial layer between the active region trenches.
3. The manufacturing process according to any one of claim 2, further comprising:
and forming a metal electrode on the surface of the device, wherein the metal electrode is contacted with the second polysilicon through the contact hole of the active region, the metal electrode covers the active region and is contacted with the body contact region, and the metal electrode covers the terminal region and is contacted with the first polysilicon in the terminal region.
4. The manufacturing process according to claim 1,
after the first oxide layer is formed, the recess region is not filled.
5. The manufacturing process according to claim 1,
when the active region contact hole is formed, the side wall of the top of the active region groove can leave a barrier layer formed by the first oxide layer.
6. The manufacturing process according to claim 1,
and when a gate oxide layer is formed above the first polysilicon in the active region groove, the source region ions form a source region.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210416147.3A CN114864404A (en) | 2022-04-20 | 2022-04-20 | Manufacturing process of SBR (styrene butadiene rubber) device for realizing charge coupling by 3 masks |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210416147.3A CN114864404A (en) | 2022-04-20 | 2022-04-20 | Manufacturing process of SBR (styrene butadiene rubber) device for realizing charge coupling by 3 masks |
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Cited By (1)
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