CN114858268A - Vibration sensor and preparation method thereof - Google Patents
Vibration sensor and preparation method thereof Download PDFInfo
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- CN114858268A CN114858268A CN202210388018.8A CN202210388018A CN114858268A CN 114858268 A CN114858268 A CN 114858268A CN 202210388018 A CN202210388018 A CN 202210388018A CN 114858268 A CN114858268 A CN 114858268A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000003466 welding Methods 0.000 claims description 29
- 238000007789 sealing Methods 0.000 claims description 12
- 239000003292 glue Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 238000005219 brazing Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 4
- 238000013461 design Methods 0.000 abstract description 4
- 238000005520 cutting process Methods 0.000 abstract description 2
- 238000012858 packaging process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 230000000149 penetrating effect Effects 0.000 description 5
- 238000010008 shearing Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000008054 signal transmission Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 239000008358 core component Substances 0.000 description 2
- 238000011900 installation process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
- G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
- G01H11/08—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means using piezoelectric devices
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Abstract
The invention discloses a vibration sensor and a preparation method thereof, and the vibration sensor comprises a connector, a shielding wire, a mass block, a base, a piezoelectric device and a nut, wherein the connector is connected with the base through the shielding wire, the mass block is arranged in the base, the mass block is tightly pressed and fixed through the nut and is installed on the base, the piezoelectric device is arranged between the base and the mass block, an insulating sheet is clamped between the piezoelectric device and the mass block, and a combined device formed by the connector, the shielding wire, the piezoelectric device, the insulating sheet, the mass block and the nut is arranged in a closed shell formed by connecting the base and a shell, so that the problem of weak interference capability is solved. The invention has the advantages that: adopt and cut integral type structural design, have sensor body small-size, light weight and can high temperature resistance's advantage to the structure of cutting can effectively reduce the interference signal that pyroelectric brought, improves the interference killing feature.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a vibration sensor and a preparation method thereof.
Background
Due to the rapid development of the ultra-high temperature piezoelectric vibration sensor in the vibration measurement application of high-temperature parts of engines of aviation, aerospace and ships, particularly, the aircraft engine is the heart of an airplane. Thus, space limitations on the turbine or scroll shaft of the engine, insufficient space for mounting hole dimensions, and stringent requirements for weight; meanwhile, the sensor is basically arranged at a combustion part of the engine, and the part requires high temperature, the surrounding environment is severe, and the electromagnetic interference is serious. Therefore, the demand for high-temperature piezoelectric vibration sensors is also increasing at present.
Disclosure of Invention
An object of the present invention is to provide a vibration sensor and a method for manufacturing the same, which can solve the above problems. In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
the application provides a vibration sensor, including connector, shielded wire, quality piece, base, piezoelectric device and nut, the connector passes through the shielded wire with the base links to each other, the quality piece sets up inside the base, the quality piece passes through the nut compresses tightly fixedly and installs on the base, the base with be provided with piezoelectric device between the quality piece, piezoelectric device with press from both sides between the quality piece and be equipped with the insulating piece, by the connector the shielded wire piezoelectric device the insulating piece the quality piece with the composite member that the nut constitutes jointly is arranged in the airtight shell that constitutes is connected with the shell to the base.
In combination with the technical solution provided above, in some possible implementation manners, the piezoelectric device includes electrode plates and a single chip, a plurality of the single chips are connected in parallel through a conductive plate and are mounted on the base in a pressing manner, the mass block is disposed above an assembly formed by the plurality of the single chips and the conductive plate, and each single chip is mounted between two adjacent electrode plates.
In combination with the technical scheme provided above, in some possible implementation manners, the electrode sheet includes a negative electrode sheet and a positive electrode sheet, and the single crystal sheet is installed between the negative electrode sheet and the positive electrode sheet; an insulating sheet is arranged between the positive electrode plate and the mass block.
Synthesize the technical scheme that the aforesaid provided, in some possible implementation manners, the connector includes connector inner shell, connector shell and contact pin, the connector shell endotheca is equipped with the connector inner shell, be provided with the contact pin in the connector inner shell, the contact pin terminal surface is provided with the boss, the boss along keeping away from the direction of connector extend and with the shielded wire welding.
In some possible implementation manners, a second connector tail is arranged at one end, close to the connector, of the base, and the end face of the second connector tail is welded and fixed with the shielding wire.
The application also provides a preparation method of the vibration sensor, which comprises the following steps:
s1: sequentially connecting the mass block, the insulating sheet, the positive electrode plate, the single chip and the negative electrode plate in parallel and sleeving the mass block, the insulating sheet, the positive electrode plate, the single chip and the negative electrode plate on a jig;
s2: after the mass block, the single chip, the positive electrode plate, the negative electrode plate and the insulating sheet are sleeved, and pins of the positive electrode plate and the negative electrode plate are bent for 90 degrees;
s3: after bending, sealing the shielding wire with the base;
s4: after sealing, welding and fixing the shell and the base;
s5: after the fixing, welding the shielding wire and the contact pin;
s6: and welding, fixing and sealing the tail of the connector and the shielding wire to finish the preparation.
In combination with the technical solutions provided above, in some possible implementation manners, the welding manner includes a positioning laser welding manner and a high-frequency brazing manner.
In combination with the above technical solution, in some possible implementations, the shielding wire passes through the connector inner housing and extends to the boss pins of the positive electrode tab and the negative electrode tab.
In combination with the technical solution provided above, in some possible implementations, an insulating material is disposed between the connector inner housing and the connector outer housing, and the insulating material is one or more of glue, glass, or ceramic sintering.
The sensor adopts a shearing integrated structure design, has the advantages of small size, light weight and high temperature resistance of the sensor body, and can effectively reduce interference signals brought by pyroelectric effect by the shearing structure; the anti-interference capability can be improved, and an external interference source can be effectively isolated.
The invention has the beneficial effects that: the high-temperature piezoelectric vibration sensor adopts a shearing integrated structure design, and has the advantages of small size (24.9mmX14.3Xmm14.3mm), light weight and 650 ℃ of use temperature; due to the fact that the cutting structure is an ultra-high temperature product, interference signals caused by pyroelectric effect can be effectively reduced; the anti-interference ability can be improved with the equipment of connector (shell non-signal ground), and original high temperature cable shell is signal ground promptly, and the external world has two-layer casing inside and outside if interference source receives the influence easily, and double-deck shielding cable has, and signal ground is inner shell (inlayer shielding), and external interference source also can effectively be kept apart to shell (outer shielding).
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the embodiments of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic internal view of an overall structure provided in an embodiment of the present invention.
Fig. 2 is a schematic view of an internal structure of a base according to an embodiment of the present invention.
The labels in the figure are: 1. a connector; 2. the first connector is attached at the tail; 3. a shielded wire; 4. the second connector is attached at the tail; 5. a base; 6. a negative electrode plate; 7. a positive electrode plate; 8. a mass block; 9. a housing; 10. a nut; 11. a connector inner housing; 12. a connector housing; 13. inserting a pin; 14. an insulating sheet; 15. and (3) a single wafer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present invention, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
Example 1
As shown in fig. 1 and fig. 2, this embodiment provides a vibration sensor, including connector 1, double-layer shielded cable 3, mass block 8, base 5, piezoelectric device and nut 10, connector 1 passes through double-layer shielded cable 3 with base 5 links to each other, mass block 8 sets up inside base 5, mass block 8 passes through nut 10 compresses tightly fixedly and installs on base 5, base 5 with be provided with piezoelectric device between mass block 8, piezoelectric device with insulating piece 14 is pressed between mass block 8, by connector 1, double-layer shielded cable 3, piezoelectric device, insulating piece 14, mass block 8 and the combined device that nut 10 constitutes jointly place in the airtight shell that base 5 and shell 9 are connected and constitute.
In some alternative embodiments, the piezoelectric device includes electrode plates and a single chip 15, a plurality of the single chips 15 are connected in parallel through conductive plates and mounted on the base 5 in a pressing manner, the mass block 8 is disposed above an assembly of the plurality of the single chips 15 and the conductive plates, and each single chip 15 is mounted between two adjacent electrode plates.
In some alternative embodiments, the electrode sheet comprises a negative electrode sheet 6 and a positive electrode sheet 7, and the single crystal sheet 15 is installed between the negative electrode sheet 6 and the positive electrode sheet 7; an insulating sheet 14 is arranged between the positive electrode sheet 7 and the mass block 8.
In some optional embodiments, the connector 1 includes a connector inner housing 11, a connector outer housing 12 and a pin 13, the connector inner housing 11 is sleeved in the connector outer housing 12, the pin 13 is disposed in the connector inner housing 11, a boss is disposed on an end face of the pin 13, and the boss extends along a direction away from the connector 1 and is welded to the double-layer shielding cable 3.
In some alternative embodiments, one end of the base 5 close to the connector 1 is provided with a second connector tail 4, and the end face of the second connector tail 4 is welded and fixed with the double-layer shielding cable 3.
The structure of the connector 1: the mounting thread of the connector 1 is 10-32 UNF-2A; the connector mainly comprises a connector inner shell 11, a connector outer shell 12, a connector 1 pin 13 and a connector 1 inner shell 9, wherein the connector inner shell and the connector 1 outer shell are packaged in an insulation mode, and the packaging process can be used for sintering high-temperature glue, glass or ceramic and preventing the inner shell and the outer shell 9 from being conducted with each other; the contact pin 13 of the connector 1 and the inner shell 11 of the connector are packaged in an insulating way, and the packaging process can be used for sintering high-temperature glue, glass or ceramic without limitation and preventing the inner shell and the contact pin 13 from being conducted with each other; the connector housing 12 is used for being welded and fixed with the connector 1.
Example 2
A vibration sensor preparation method comprises the following steps:
s1: sequentially connecting the mass block 8, the insulating sheet 14, the positive electrode plate 7, the single crystal plate 15 and the negative electrode plate 6 in parallel and sleeving on a jig;
specifically, the core assembly is assembled, the jig is sequentially sleeved with a mass block 8, an insulating sheet 14, a positive electrode, a single chip 15, a negative electrode and an insulating sheet 14, wherein the number of the single chips 15 is 6, the single chips are respectively arranged between the positive electrode and the negative electrode, and the single chips 15 are connected in parallel.
S2: after the assembly, the mass block 8, the single chip 15, the positive electrode plate 7, the negative electrode plate 6 and the insulating sheet 14 are fixed, and pins of the positive electrode plate 7 and the negative electrode plate 6 are bent for 90 degrees;
specifically, the mass block 8, the single chip 15, the electrode plate and the insulating plate 14 are locked and fixed on the base 5 in the sleeving sequence, after the mass block 8, the single chip 15, the electrode plate and the insulating plate 14 are fixed, the positive electrode pin and the negative electrode pin are bent for 90 degrees, so that the bent electrodes just fall at the wire outlet of the double-layer shielding cable 3 and are conveniently used for being welded with the double-layer shielding cable 3, the positive electrode pin is welded with the core wire of the double-layer shielding cable 3, the negative electrode pin is welded with the inner shell of the double-layer shielding cable 3, the positive electrode pin and the negative electrode pin are combined with the double-layer shielding cable 3 to transmit signals, and the positive electrode and the negative electrode have boss pins.
S3: after bending, sealing the double-layer shielding cable 3 with the base 5;
specifically, after the positive and negative electrodes of the double-layer shielding cable 3 are conducted with the positive and negative electrodes of the sensor pin, the shell 9 and the base 5 are welded and fixed, so that the sensor body is in a sealed state, and internal core components (an assembly formed by combining the mass block 8, the single chip 15, the electrode plate and the insulating sheet 14) are protected.
Specifically, the stripped inner shell of the double-layer shielding cable 3 passes through the sensor base 5 and directly extends to the position of the sensor body close to the positive electrode and the negative electrode, namely the position of the positive electrode boss pin and the negative electrode boss pin bent as described above, wherein the base 5 is provided with a phi 3mm through hole for passing through the inner shell of the double-layer shielding cable 3, a core wire of the double-layer shielding cable 3 passing through the through hole of the base 5 is welded and fixed with the positive electrode pin of the sensor, a welding wire of the inner shell of the double-layer shielding cable 3 is welded and fixed with the negative electrode pin of the sensor as a negative wire, and the positive electrode and the negative electrode of the sensor are conducted with the positive electrode and the negative electrode of the double-layer shielding cable 3 at the moment for signal transmission of the sensor.
S4: after sealing, welding and fixing the shell 9 and the base 5;
specifically, the connector inner shell 11 and the connector outer shell 12 are packaged in an insulating way, and the packaging process can be used for sintering high-temperature glue, glass or ceramic without limitation and preventing the inner shell 9 and the outer shell 9 from being conducted with each other; the connector inner shell 11 is provided with a boss used for being welded with an inner shell lead of the double-layer shielding cable 3; the contact pin 13 of the connector 1 and the inner shell 11 of the connector are packaged in an insulating way, and the packaging process can be used for sintering high-temperature glue, glass or ceramic without limitation and preventing the inner shell and the contact pin 13 from being conducted with each other; wherein the end face of the contact pin 13 is provided with a boss for welding with the core wire of the double-layer shielding cable 3.
S5: after the fixation, the double-layer shielding cable 3 and the contact pin 13 are welded;
specifically, the other end of the double-layer shielding cable 3 is stripped to form a position, wherein the inner shell of the double-layer shielding cable 3 penetrates through the position, which is about 3mm away from the connecting pin 13, of the tail-attached inner cavity of the connector 1, positive and negative signal lines are led out from the double-layer shielding cable 3 at the position, and are respectively welded with the boss of the pin 13 of the connector 1 and the boss of the inner shell 11 of the connector in the previous step, and the welding does not limit the position laser welding, the press welding and the high-temperature glue fixing modes.
S6: and (3) attaching the tail of the connector 1 to the double-layer shielding cable 3 for welding, fixing and sealing to finish preparation.
Specifically, the tail of the connector 1 needs to be welded, fixed and sealed with the double-layer shielding cable 3, and the welding does not limit position laser welding and high-frequency soldering.
Example 3
The preparation process includes three installation processes, is sensor body installation process, double-deck shielding hardwire and 5 sealing-in processes of base and double-deck shielding hardwire and 1 encapsulation processes of connector respectively, wherein:
1. sensor body installation:
step 1: taking a jig with a hole in the middle, and sequentially sleeving a mass block 8, an insulating sheet 14, a positive electrode, a single chip 15, a negative electrode and the insulating sheet 14 on the jig, wherein 6 single chips 15 are respectively arranged between the positive electrode and the negative electrode, and the single chips 15 are connected in parallel to improve the sensitivity of the sensor;
step 2: putting the sleeved centered jig parts into a screw on a screw of the base 5;
and step 3: the mass block 8 is compressed through a pre-tightening device, the centering jig sleeved on the screw rod is taken out, the nut is locked on the screw rod of the base 5 through a certain torque, and the mass block 8, the single crystal wafer 15, the electrode plate and the insulating sheet 14 are locked and fixed on the base 5;
and 4, step 4: after the mass block 8, the single chip 15, the electrode plate and the insulating sheet 14 are fixed, the positive and negative electrode pins are bent by 90 degrees, so that the bent electrodes just fall on the wire outlet of the double-layer shielding cable 3 and are conveniently used for welding with the double-layer shielding cable 3, the positive electrode pin is welded with the core wire of the double-layer shielding cable 3, the negative electrode pin is welded with the inner shell of the double-layer shielding cable 3, the positive and negative electrode pins and the double-layer shielding cable 3 are combined to transmit signals, and the positive and negative electrodes are provided with lug boss pins;
and 5: the housing 9 is welded to the base 5, so that the sensor body is sealed and protects the internal core components (the assembly formed by combining the mass block 8, the single chip 15, the electrode plates and the insulating sheet 14).
2. The double-layer shielding hard wire is sealed with the base 5:
step 1: the opening at one end of the connecting tail is used for the double-layer shielding function, the opening has the same outer diameter with the double-layer shielding, and the double-layer shielding can smoothly pass through the opening;
step 2: a small section of outer shell 9 (outer shielding) of the double-layer shielding cable 3 is reserved in the connecting tail cavity of the double-layer shielding cable 3, the rest of the outer shell 9 of the double-layer shielding cable is peeled off, and an inner shell (inner shielding) of the double-layer shielding cable 3 is exposed;
and step 3: enabling the stripped inner shell of the double-layer shielding cable 3 to penetrate through a sensor base 5 and directly extend to the position, close to a positive electrode and a negative electrode, of the sensor body, wherein the base 5 is provided with a phi 3mm through hole for penetrating the inner shell of the double-layer shielding cable 3;
and 4, step 4: the double-layer shielding cable 3 penetrating through the through hole of the base 5 can be welded and fixed with the positive and negative pin electrodes of the sensor and is used for signal transmission of the sensor;
and 5: insulation protection is needed between the inner shell (inner shield) penetrating through the base 5 and the double-layer shielding cable 3 at the inner shield position and the hole penetrating through the base 5, and the insulation protection mode is not limited by high-temperature glue, glass or ceramic sintering;
step 6: the outer side of the inner layer shield needs to be packaged, the packaging process can be performed without limitation on high-temperature glue, glass or ceramic sintering, and the packaging process is used for sealing the end face of the double-layer shielded cable 3 to prevent the double-layer shielded cable 3 from being affected by moisture and the reduction of the insulation value;
and 7: the second connector tail 4 of the connecting tail end surface needs to be welded and fixed with the double-layer shielding cable 3 and has the sealing protection function, and the welding does not limit the position laser welding and high-frequency brazing.
3. Double-shield hard wire and connector 1 package
Step 1: the hole at the tail end of the connector 1 has the double-layer shielding effect, the outer diameter of the hole is equal to that of the double-layer shielding, and the double-layer shielding can smoothly pass through the hole;
step 2: a small section of outer shell 9 (outer shielding) of the double-layer shielding cable 3 is reserved in the tail-attached cavity of the connector 1 of the double-layer shielding cable 3, the rest of the outer shell 9 of the double-layer shielding cable is peeled off, and the inner shell (inner shielding) of the double-layer shielding cable is exposed;
and step 3: penetrating the inner shell of the stripped double-layer shielding cable 3 to a position which is about 3mm away from the connecting pin 13 of the tail attached inner cavity of the connector 1, wherein positive and negative signal wires are led out from the double-layer shielding cable 3 and are respectively welded with the pin 13 of the connector 1 and the inner shell 11 of the connector;
and 4, step 4: the led-out signal wires cannot be tightened too tightly and loosened too loosely, the signal wires are easy to break due to the tightening, and the positive and negative signal wires are easy to lean too tightly due to the loosening, so that the signal output is influenced by the short circuit;
and 5: positive and negative signal wires led out from the double-layer shielding cable 3 are respectively welded with a pin 13 of the connector 1 and an inner shell 11 of the connector, and the welding does not limit the laser welding, the resistance welding and the high-temperature glue fixing modes;
step 6: the position above the contact pin 13 needs to be packaged, and the packaging process can be used for sealing and connecting the end face of the double-layer shielding cable 3 without limitation of high-temperature glue, glass or ceramic sintering, so that the double-layer shielding cable 3 is prevented from being affected by damp and the reduction of the insulation value is prevented;
and 7: the joint of the first connector tail 2 and the double-layer shielding cable 3 needs to be welded, fixed and sealed with the double-layer shielding cable 3 for protection, and welding does not limit position laser welding and high-frequency soldering.
The principle of the high-temperature piezoelectric vibration sensor is as follows:
the high-temperature piezoelectric vibration sensor works based on the piezoelectric effect of a sensitive device, and the sensitive device is a test instrument which converts pressure generated by physical phenomena such as acceleration (or speed), vibration, impact and the like into an electric signal which can be measured conveniently by using the piezoelectric effect of a piezoelectric material of a single chip 15. The high-temperature piezoelectric vibration sensor is a device which takes a piezoelectric material as a conversion element and outputs electric charge in direct proportion to acceleration (or speed). The high-temperature piezoelectric vibration sensor for converting the vibration physical quantity of the measured object into the electric signal needs to transmit the monitored electric signal to the acquisition end through the high-temperature cable for data analysis, and the charge signal is easily interfered by the external complex environment in the transmission process, so that the double-layer shielding cable 3 is adopted for signal transmission to prevent the signal transmission process from being influenced.
In conclusion, the high-temperature piezoelectric vibration sensor is adopted, and the shearing integrated structure design is adopted, so that the high-temperature piezoelectric vibration sensor has the advantages of small size, light weight and capability of reaching the use temperature of 650 ℃.
Due to the fact that the shearing structure is an ultra-high temperature product, interference signals caused by pyroelectric can be effectively reduced. The anti-interference ability can be improved with the equipment of connector 1 (shell 9 non-signal ground) to double-deck shielding cable 3, and original high temperature cable shell 9 is signal ground promptly, and the external world has the interference source to be influenced easily, and double-deck shielding cable 3 has two-layer casing inside and outside, and signal ground is inner shell (inlayer shielding), and external interference source can effectively be kept apart to shell 9 (outer shielding).
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. The utility model provides a vibration sensor, its characterized in that, includes connector, shielded wire, quality piece, base, piezoelectric device and nut, the connector passes through the shielded wire with the base links to each other, the quality piece sets up inside the base, the quality piece passes through the nut compresses tightly fixedly and installs on the base, the base with be provided with piezoelectric device between the quality piece, piezoelectric device with it is equipped with the insulating piece to press from both sides between the quality piece, by the connector the shielded wire piezoelectric device the insulating piece the quality piece with the combined device that the nut constitutes jointly arranges in the airtight shell that the base constitutes is connected with the shell.
2. A vibration sensor according to claim 1, wherein: the piezoelectric device comprises electrode plates and single wafers, wherein a plurality of the single wafers are connected in parallel through conducting strips and are tightly pressed and installed on the base, the mass block is arranged above an assembly formed by the plurality of the single wafers and the conducting strips, and each single wafer is installed between two adjacent electrode plates respectively.
3. A vibration sensor according to claim 2, wherein: the electrode plate comprises a negative electrode plate and a positive electrode plate, and the single crystal plate is arranged between the negative electrode plate and the positive electrode plate.
4. A vibration sensor according to claim 3, wherein: an insulating sheet is arranged between the positive electrode plate and the mass block.
5. A vibration sensor according to claim 1, wherein: the connector includes connector inner shell, connector shell and contact pin, connector shell endotheca is equipped with the connector inner shell, be provided with the contact pin in the connector inner shell, the contact pin terminal surface is provided with the boss, the boss along keeping away from the direction of connector extend and with the shielded wire welding.
6. A vibration sensor according to claim 1, wherein: one end of the base, which is close to the connector, is provided with a second connector tail, and the tail end face of the second connector is welded and fixed with the shielding wire.
7. A method of manufacturing a vibration sensor, a vibration sensor according to any of claims 1 to 6, comprising the steps of:
s1: sequentially connecting the mass block, the insulating sheet, the positive electrode plate, the single chip and the negative electrode plate in parallel and sleeving the mass block, the insulating sheet, the positive electrode plate, the single chip and the negative electrode plate on a jig;
s2: after the mass block, the single chip, the positive electrode plate, the negative electrode plate and the insulating sheet are sleeved, and pins of the positive electrode plate and the negative electrode plate are bent for 90 degrees;
s3: after bending, sealing the shielding wire with the base;
s4: after sealing, welding and fixing the shell and the base;
s5: after the fixing, welding the shielding wire and the contact pin;
s6: and welding, fixing and sealing the tail of the connector and the shielding wire to finish the preparation.
8. A method of manufacturing a vibration sensor according to claim 7, wherein: the welding mode comprises a positioning laser welding mode and a high-frequency brazing mode.
9. A method of manufacturing a vibration sensor according to claim 7, wherein: the shielding wire penetrates through the connector inner shell and extends to the boss pins of the positive electrode plate and the negative electrode plate.
10. A method of manufacturing a vibration sensor according to claim 7, wherein: and an insulating material is arranged between the connector inner shell and the connector outer shell, and the insulating material is one or more of glue, glass or ceramic sintering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210388018.8A CN114858268A (en) | 2022-04-14 | 2022-04-14 | Vibration sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210388018.8A CN114858268A (en) | 2022-04-14 | 2022-04-14 | Vibration sensor and preparation method thereof |
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| CN203164203U (en) * | 2013-04-16 | 2013-08-28 | 厦门乃尔电子有限公司 | Ultrahigh-resonant frequency piezoelectric type acceleration sensor |
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| CN107110885A (en) * | 2015-06-26 | 2017-08-29 | 厦门乃尔电子有限公司 | Shearing-type piezoelectric transducer |
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| CN209417074U (en) * | 2018-12-28 | 2019-09-20 | 郑州易度传感技术有限公司 | A kind of piezoelectricity velocity sensor |
| CN111551760A (en) * | 2020-06-16 | 2020-08-18 | 山东大学 | Microminiature ultra-high temperature piezoelectric vibration acceleration sensor and assembly method thereof |
| CN212111478U (en) * | 2020-06-23 | 2020-12-08 | 北京航天拓扑高科技有限责任公司 | Piezoelectric acceleration sensor for integrated instrument |
| CN212514648U (en) * | 2020-06-16 | 2021-02-09 | 山东本源晶体科技有限公司 | Microminiature ultra-high temperature piezoelectric vibration acceleration sensor |
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| CN203164203U (en) * | 2013-04-16 | 2013-08-28 | 厦门乃尔电子有限公司 | Ultrahigh-resonant frequency piezoelectric type acceleration sensor |
| CN107110885A (en) * | 2015-06-26 | 2017-08-29 | 厦门乃尔电子有限公司 | Shearing-type piezoelectric transducer |
| CN106768289A (en) * | 2016-12-28 | 2017-05-31 | 山东大学 | A kind of new type high temperature piezoelectric vibration sensors |
| WO2018223852A1 (en) * | 2017-06-07 | 2018-12-13 | 西人马（厦门）科技有限公司 | Charge output element and annular shear-type piezoelectric acceleration sensor |
| CN209417074U (en) * | 2018-12-28 | 2019-09-20 | 郑州易度传感技术有限公司 | A kind of piezoelectricity velocity sensor |
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