CN114846406A - Positive photosensitive resin composition - Google Patents

Positive photosensitive resin composition Download PDF

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CN114846406A
CN114846406A CN202080089486.4A CN202080089486A CN114846406A CN 114846406 A CN114846406 A CN 114846406A CN 202080089486 A CN202080089486 A CN 202080089486A CN 114846406 A CN114846406 A CN 114846406A
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chemical formula
resin composition
photosensitive resin
positive photosensitive
group
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尹赫敏
吕太勋
李基善
金奉熙
金东明
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Dongjin Semichem Co Ltd
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Dongjin Semichem Co Ltd
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Priority claimed from PCT/KR2020/019343 external-priority patent/WO2021137599A1/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details

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  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
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Abstract

Disclosed are a positive photosensitive resin composition and a method for producing the same. A positive photosensitive resin composition comprising: a polymer resin containing i) 5 to 95 wt% of a polyimide precursor having a structural unit represented by chemical formula 1, ii) 5 to 95 wt% of a polyimide having a structural unit represented by chemical formula 2, and iii) 0 to 20 wt% of a polyimide precursor having a structural unit represented by chemical formula 3; a quinone diazide compound containing 5 to 50 parts by weight relative to 100 parts by weight of the polymer resin; and a solvent comprising 100 to 2,000 parts by weight relative to 100 parts by weight of the polymer resin.

Description

Positive photosensitive resin composition
Technical Field
The present invention relates to a positive photosensitive resin composition, and more particularly, to a positive photosensitive resin composition used in a display device.
Background
In recent markets, Organic Light Emitting Diode (OLED) display devices, especially Active Matrix Organic Light Emitting Diode (AMOLED) display devices, are favored for various reasons.
Generally, an Organic Light Emitting Diode (OLED) device includes an organic insulating film, and a polyimide photosensitive resin composition is generally used in forming the organic insulating film. In a polyimide precursor used in a conventional polyimide photosensitive resin composition, a technique using an alkyl-substituted polyamic acid ester is applied, but the use of an alkyl-substituted polyamic acid ester has problems in that it is difficult to adjust the solubility and the sensitivity is low, and thus a solution related thereto is urgently required.
Disclosure of Invention
Technical subject
Accordingly, an object of the present invention is to provide a positive photosensitive resin composition which is easy to adjust solubility and remarkably improved in sensitivity.
Means for solving the technical problem
In order to achieve the above object, the present invention provides a positive photosensitive resin composition comprising: a polymer resin containing i) 5 to 95 wt% of a polyimide precursor having a structural unit represented by the following chemical formula 1, ii) 5 to 95 wt% of a polyimide precursor having a structural unit represented by the following chemical formula 2, and iii) 0 to 20 wt% of a polyimide precursor having a structural unit represented by the following chemical formula 3; a quinone diazide compound containing 5 to 50 parts by weight relative to 100 parts by weight of the polymer resin; and a solvent comprising 100 to 2,000 parts by weight relative to 100 parts by weight of the polymer resin.
[ chemical formula 1]
Figure BDA0003707861410000021
[ chemical formula 2]
Figure BDA0003707861410000022
[ chemical formula 3]
Figure BDA0003707861410000023
In the chemical formulas 1 to 3, R 1 And R 2 Each independently an organic group having a carbon number of 5 to 30, in which hydrogen may be substituted by hydroxyl (OH), methyl or fluorine, methylene may be substituted by oxygen or nitrogen, R 3 May be a substituent derived from an epoxy group.
In addition, the present invention provides a display element comprising a driving circuit, a planarizing layer, a first electrode, an insulating layer, a light-emitting layer, and a second electrode over a substrate, wherein at least one of the planarizing layer and the insulating layer is formed using the positive photosensitive resin composition.
The positive photosensitive resin composition to which the present invention is applied is easy to adjust the solubility, and can improve the sensitivity, chemical resistance, adhesion, and the like when forming a pattern of a display element such as an Organic Light Emitting Diode (OLED), and can also suppress the generation of residue (scum) and crack (crack).
Drawings
Fig. 1 is a schematic view illustrating a state where a patterned (patterned) film is formed on an ITO (Indium Tin oxide) substrate having a Pattern formed thereon and an EL (Electroluminescent Lighting) is deposited, to which an embodiment of the present invention is applied.
Detailed Description
Next, the present invention will be described in more detail.
In this specification, "+" denotes a moiety attached to the same or different yard or chemical formula.
The positive photosensitive resin composition to which the present invention is applied comprises a polymer resin, a quinone diazide compound, and a solvent.
The polymer resin used in the present invention may function to form a polyimide film by polymerization, and may include 5 to 95 wt%, specifically 10 to 90 wt%, 5 to 95 wt%, specifically 50 to 90 wt%, of a polyimide precursor having a structural unit represented by the following chemical formula 1, and 0 to 20 wt%, specifically 0 to 15 wt%, of a polyimide precursor having a structural unit represented by the following chemical formula 3.
[ chemical formula 1]
Figure BDA0003707861410000031
[ chemical formula 2]
Figure BDA0003707861410000032
[ chemical formula 3]
Figure BDA0003707861410000041
In the chemical formulas 1 to 3, R 1 And R 2 Each independently is an organic group having a carbon number of 5 to 30, specifically, may be an organic group having a carbon number of 5 to 20. The hydrogen in the organic group may be substituted by hydroxyl (OH), methyl or fluorine, while the methylene group may be substituted by oxygen or nitrogen. The R is 3 As the substituent derived from the epoxy group, specifically, a substituent represented by the following chemical formula 4 may be mentioned.
[ chemical formula 4]
Figure BDA0003707861410000042
In the chemical formula 4, R 4 Is a linear, branched or cyclic alkyl group having 1 to 12 carbons, wherein hydrogen of the alkyl group may be substituted with 1 to 3 fluorine or hydroxyl group, and the methylene group may be substituted with alkenyl group, oxygen, nitrogen, ester group (COO) or carboxyl group (C ═ O).
R as a substituent represented by the chemical formula 4 3 Specifically, a compound selected from the group consisting of Epoxycyclohexylmethylmethacrylate (ECMMA), 1,2-Epoxy-4-vinylcyclohexane (1, 2-Epoxycyclohexane-4-vinylcyclohexane), 3,4- (Epoxycyclohexane) methyl-3',4' -epoxycyclohexylcarboxylate (3,4- (Epoxycyclohexane) methyl-3',4' -epoxycyclohexylcarboxylate) and 3,4-Epoxycyclohexylmethyl 3, 4-Epoxycyclohexane carboxylate-modified epsilon-caprolactone (3,4-Epoxycyclohexylmethyl-3',4' -Epoxycyclohexane carboxylate) is preferable. In particular, when 1,2-Epoxy-4-vinylcyclohexane (1,2-Epoxy-4-vinylcyclohexane) or the like has an alkyl group or an alkynyl group as a terminal substituent of cyclohexane, the thermal stability is higher than that of a carboxylic acid ester (carboxylate)The insulating film is excellent and can be used as an insulating film for an Organic Light Emitting Diode (OLED), but is not limited thereto.
The polymer resin is produced by polymerizing the structural components of an aromatic dianhydride and a diamine, for example, the structural components of the aromatic dianhydride and the diamine are polymerized at a molar ratio of 1:0.6 to 1: 1.4. When the molar ratio of the structural components of the aromatic dianhydride and the diamine is exceeded, the mechanical and thermal properties may be deteriorated because the molecular weight of the resin is reduced to 3,000 or less.
As the structural component of the aromatic dianhydride, for example, the following chemical formula R can be selected 1 -1 to R 1 1 or more of the compounds represented by-7, in which case R in the polymer resin 1 The structure of (a) is a structure derived from the following aromatic dianhydride.
[ chemical formula R 1 -1]
Figure BDA0003707861410000051
[ chemical formula R 1 -2]
Figure BDA0003707861410000052
[ chemical formula R 1 -3]
Figure BDA0003707861410000053
[ chemical formula R 1 -4]
Figure BDA0003707861410000061
[ chemical formula R 1 -5]
Figure BDA0003707861410000062
[ chemical formula R 1 -6]
Figure BDA0003707861410000063
[ chemical formula R 1 -7]
Figure BDA0003707861410000071
As the structural component of the diamine, for example, the following chemical formula R can be selected 2 -1 to R 2 Preferably, an aromatic diamine is used as 1 or more of the compounds represented by-10. R in the polymer resin 2 The structure of (a) is a structure derived from the following diamine.
[ chemical formula R 2 -1]
Figure BDA0003707861410000072
[ chemical formula R 2 -2]
Figure BDA0003707861410000073
[ chemical formula R 2 -3]
Figure BDA0003707861410000074
[ chemical formula R 2 -4]
Figure BDA0003707861410000081
[ chemical formula R 2 -5]
Figure BDA0003707861410000082
[ chemical formula R 2 -6]
Figure BDA0003707861410000083
[ chemical formula R 2 -7]
Figure BDA0003707861410000084
[ chemical formula R 2 -8]
Figure BDA0003707861410000085
[ chemical formula R 2 -9]
Figure BDA0003707861410000091
[ chemical formula R 2 -10]
Figure BDA0003707861410000092
In the polyimide precursor having the structural unit represented by the chemical formula 1, the content of the structural unit represented by the chemical formula 1 is not particularly limited as long as the developing speed of the composition can be increased, and for example, may be 0.1 to 100 mol% with respect to the number of all repeating units, and specifically, may be 5 to 100 mol%.
In the polyimide precursor having the structural unit represented by the chemical formula 1, by being R 3 Using the substituent derived from the epoxy group, R in which a hydroxyl group (OH) is substituted to a polyamic acid ester can be produced 3 The substance (1). A polyimide having a structural unit represented by chemical formula 1, which will include the polyamic acid ester structure substituted with a hydroxyl group (OH)When the imine precursor is used as a photosensitive resin composition, the sensitivity can be improved as compared with a conventional photosensitive resin composition having no hydroxyl group. As an example, when a positive photosensitive resin composition is coated on an organic light emitting earphone hanger (OLED) substrate and irradiated with light after volatilizing a solvent by soft baking, a quinone diazide substance is converted from hydrophobic to hydrophilic, and in the case where a hydroxyl group (OH) is included in the structural unit represented by the chemical formula 1, the developing speed and thereby the sensitivity can be further increased.
The weight average molecular weight (Mw) of the polyimide precursor having the structural unit represented by the chemical formula 1 is 3,000 to 20,000, and specifically, may be 3,500 to 10,000. In the case where the molecular weight of the polyimide precursor is too low, there may be a problem that mechanical and thermal characteristics after curing of the resin composition do not conform to the Organic Light Emitting Diode (OLED), and in the case where the molecular weight is too high, there may be a problem that the production cost of the Organic Light Emitting Diode (OLED) becomes high because the amount required for integrated illumination is too high, that is, the sensitivity is too low.
The polyimide having the structural unit represented by the chemical formula 2 can control sensitivity. In the structure of chemical formula 2, when R 2 The increase in sensitivity can be controlled when substituted with a hydroxyl group, and the decrease in sensitivity can be controlled when substituted with a fluorine group. In the structural unit represented by the chemical formula 2, R 1 And R 2 As described above.
The weight average molecular weight (Mw) of the polyimide having the structural unit represented by the chemical formula 2 is 4,000 to 20,000, and specifically, may be 3,500 to 10,000. In the case where the molecular weight of the polyimide is too low, there may be a problem that mechanical and thermal characteristics after curing of the resin composition do not conform to the Organic Light Emitting Diode (OLED), and in the case where the molecular weight is too high, there may be a problem that the production cost of the Organic Light Emitting Diode (OLED) becomes high because the demand for integrated illumination is too high, that is, the sensitivity is too low.
A polyimide precursor having a structural unit represented by the chemical formula 3The precursor, which is a polyamic acid structure including a carboxyl group, may further increase the developing speed and thereby sensitivity in the case of including a hydroxyl group (OH), as in the polyimide precursor having the structural unit represented by the chemical formula 1. However, when 20 wt% or more of the structural unit represented by chemical formula 3 is used in the resin polymer composition, there is a problem that the function of the photosensitizer may be lost because the difference in development between an exposed portion and a non-exposed portion, i.e., the contrast, is relatively small. In the structural unit represented by the chemical formula 3, R 1 And R 2 As described above.
The weight average molecular weight (Mw) of the polyimide having the structural unit represented by the chemical formula 3 is 3,000 to 20,000, and specifically, may be 3,500 to 10,000. In the case where the molecular weight of the polyimide precursor is too low, there may be a problem that mechanical and thermal characteristics after curing of the resin composition do not conform to the Organic Light Emitting Diode (OLED), and in the case where the molecular weight is too high, there may be a problem that the production cost of the Organic Light Emitting Diode (OLED) becomes high because the amount required for integrated illumination is too high, that is, the sensitivity is too low.
In all the polymers, the content of the polyimide precursor having the structural unit represented by the chemical formula 1 is 5 to 95% by weight, specifically, 10 to 90% by weight, the content of the polyimide precursor having the structural unit represented by the following chemical formula 2 is 5 to 95% by weight, specifically, 50 to 90% by weight, and the content of the polyimide precursor having the structural unit represented by the following chemical formula 3 is 0 to 20% by weight, specifically, 0 to 15% by weight.
The polymer resin contains, as main components, a polyimide precursor having a structural unit represented by chemical formula 1 and a polyimide having a structural unit represented by chemical formula 2, and among all polymer resins, when the content of the polyimide precursor having a structural unit represented by chemical formula 1 or the polyimide having a structural unit represented by chemical formula 2 is less than 5% by weight, there may be caused a problem that residues (scum) and cracks (crak) are easily generated in a photoresist or coating characteristics of the photoresist are reduced such as reduction in chemical resistance, and in the case of more than 95% by weight, there may be caused a problem that sensitivity is increased and cracks are generated.
The polymer resin may include polyimide having a structural unit represented by chemical formula 2 as a main component, for example, the structure of chemical formula 2 may be included in 50 to 95 wt%, and specifically, 60 to 95 wt% in all polymer resins, thereby exhibiting coating properties such as chemical resistance or effects such as crack prevention.
The quinonediazide compound is a photosensitive substance that reacts from hydrophobic light to hydrophilic light before and after irradiation with light, and is an essential compound for forming a photosensitive resin composition. In particular, it can be effectively used for controlling the sensitivity. The quinonediazide compound may be obtained by a reaction of a phenolic compound including compounds represented by the following chemical formulae 4-1 to 4-3 with a naphthoquinonediazide sulfonic acid halogen compound.
[ chemical formula 4-1]
Figure BDA0003707861410000121
[ chemical formula 4-2]
Figure BDA0003707861410000122
[ chemical formulas 4-3]
Figure BDA0003707861410000131
In the chemical formulas 4-1 to 4-3, R 31 To R 36 Each independently hydrogen, halogen, hydroxy, alkyl of 1 to 4 carbon atoms or alkenyl of 1 to 4 carbon atoms, R 37 And R 38 Each independently hydrogen, halogen or alkyl having a carbon number of 1 to 4, R 39 In the number of hydrogen or carbon1 to 4 alkyl groups.
The content of the quinonediazide compound is 5 to 30 parts by weight, specifically, 10 to 40 parts by weight, relative to 100 parts by weight of the polymer resin. When the content of the quinonediazide compound is too low, there may be a problem of an excessive increase in sensitivity, and when the content is too high, there may be a problem of a decrease in coating characteristics of the photoresist, such as a decrease in chemical resistance, or the like, as well as a problem of easy occurrence of residue (scum).
The solvent may affect the scattering of stripes and coating thickness when coated on a substrate in the case where the viscosity of the polymer resin and the quinone diazide compound is too high. In order to reduce the scattering of the mottle and the coating thickness as described above, it is necessary to maintain an appropriate viscosity by mixing a solvent with the polymer resin and the quinone diazide compound. The boiling point of the solvent is preferably 230 ℃ or lower, and the solubility of the polymer resin and the quinonediazide compound should be excellent. As the solvent, for example, gamma-butyrolactone (GBL), N-methylpyrrolidone (NMP), Propylene Glycol Methyl Ether Acetate (PGMEA), Propylene Glycol Methyl Ether (PGME), Ethyl Lactate (EL), propyl methyl-3-methoxypropionate (MMP), and a mixture thereof can be used, in particular. For example, γ -butyrolactone (GBL), propyl methyl-3-methoxypropionate (MMP), and Propylene Glycol Methyl Ether (PGME) may be used in admixture in a molar ratio of 24:20: 56.
The content of the solvent is 100 to 2,000 parts by weight, specifically 250 to 1,500 parts by weight, relative to 100 parts by weight of the polymer resin. When the content of the solvent is too low, there is a possibility that a solid substance is precipitated when the resin composition is stored for a long time, and when the content is too high, there is a possibility that a proper thickness cannot be formed when coating is performed in the process of forming an insulating film using the resin composition.
The insulating property between the metal films in the substrate can be maintained by applying a positive photosensitive resin composition including a polymer resin including a polyimide precursor having a structural unit represented by the chemical formula 1, a polyimide having a structural unit represented by the chemical formula 2, and a polyimide precursor having a structural unit represented by the chemical formula 3, a quinone diazide compound, and a solvent onto the substrate, but one or more of additives such as a thermal crosslinking agent, a thermal acid generator, an Ultraviolet (UV) absorber, and a thermal alkali generator may be further included in order to improve the properties of the insulating film.
The thermal crosslinking agent may function to improve chemical resistance of the photosensitive resin composition by performing a crosslinking reaction with the polymer resin. The thermal crosslinking agent may be a phenol compound including the following chemical formula a, and specifically, may include a functional group represented by the following chemical formula 5.
[ chemical formula a ]
Figure BDA0003707861410000141
[ chemical formula 5]
Figure BDA0003707861410000142
In the chemical formula 5, a is the following chemical formula a, and in the chemical formula a, n is an integer of 1 to 6, and Ra is an alkyl group having a carbon number of 1 to 3.
The thermal crosslinking agent preferably includes a structure in which 1 to 4 functional groups represented by the chemical formula 5 are bonded, and specifically, may include compounds represented by the following chemical formulas 5-1 to 5-4.
[ chemical formula 5-1]
Figure BDA0003707861410000151
[ chemical formula 5-2]
Figure BDA0003707861410000152
[ chemical formulas 5-3]
Figure BDA0003707861410000153
[ chemical formulas 5-4]
Figure BDA0003707861410000161
In the chemical formulas 5-1 to 5-4, A is as described above.
The content of the thermal crosslinking agent is 10 to 50 parts by weight, specifically, 10 to 30 parts by weight, relative to 100 parts by weight of the polyimide polymer. When the amount of the thermal crosslinking agent used is too small, there is a possibility that no chemical resistance effect is obtained, and when the amount is too large, there is a possibility that a polymer resin having a height of not less than a certain level cannot be formed because a film is seriously reduced during development after soft baking for coating the photosensitive resin composition on a substrate.
The thermal acid generator can generate acid at a certain temperature or higher, and can promote the crosslinking reaction between the thermal crosslinking agent and the polymer resin. The content of the thermal acid generator is preferably 0.5 to 10 parts by weight based on 100 parts by weight of the polyimide polymer, and when the amount of the thermal acid generator is too small, there is a possibility that no effect is caused, and when the amount is too large, there is a possibility that a residue (scum) is generated.
When the photosensitive resin composition to which the present invention is applied to a substrate and used as an insulating film, an Ultraviolet (UV) absorber such as benzophenones and benzotriazoles may be further added in order to prevent the deterioration phenomenon when exposed to external light for a long time. Examples of the Ultraviolet (UV) absorber include 2- (2H-benzotriazol-2-yl) -phenol (2- (2H-benzotriazol-2-yl) -phenol). The content of the Ultraviolet (UV) absorber is preferably 0.01 to 2.0 parts by weight with respect to 100 parts by weight of the polymer resin, and when the amount of the Ultraviolet (UV) absorber used is too small, there is a possibility that no effect is caused, and when the amount is too large, there is a possibility that heat resistance is lowered.
The invention provides a method for manufacturing an insulating film formed by using a positive photosensitive resin composition. The insulating film can be applied to display elements such as Organic Light Emitting Diodes (OLEDs), and has excellent high-sensitivity pattern developability, occurrence of residue (scum) and crack (crack) during pattern formation, and effects of improving chemical resistance and adhesive force.
The insulating film manufacturing method includes: a step of drying the positive photosensitive resin composition after coating the positive photosensitive resin composition on a substrate; and a step of forming a polyimide film by curing the substrate coated with the photosensitive resin composition after exposure and development. As a method of applying the photosensitive resin composition, a conventionally known method can be used without limitation, and for example, a method such as a spin coating method (spin coating), a dip coating method (dip coating), a roll coating method (roll coating), a screen coating method (screen coating), a spray coating method (spray coating), and a screen printing method (screen printing) can be used. As the developing solution, a conventionally known developing solution can be used without limitation, and for example, an aqueous alkali solution can be used. The thickness of the insulating film of the present invention may be changed according to the purpose, and is preferably 1.0 to 15 μm, but is not limited thereto.
In addition, the present invention provides a display element comprising a driving circuit, a planarizing layer, a first electrode, an insulating layer, a light-emitting layer, and a second electrode over a substrate, wherein at least one of the planarizing layer and the insulating layer is formed using the positive photosensitive resin composition.
The present invention will be described in more detail with reference to examples, but the present invention is not limited to the following examples.
Synthesis example 1]Synthesis of polyimide precursor (chemical formula 1)
Gamma-butyrolactone (GBL, 313g) was charged into a 1000mL beaker, and 2, 2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane (bis-APAF, 71.8g, 0.196 mol) and 1, 3-bis (3-aminopropyl) tetramethyldisiloxane (SiDA, 0.99g, 0.04 mol) were dissolved at 50 ℃. To this was added 3,3',4,4' -diphenylether tetracarboxylic dianhydride (ODPA, 46.5g, 0.15 mol) and stirred at 70 ℃ for 25 hours, and then phthalic anhydride (14.8g, 0.1 mol) was added to carry out a reaction for 2 hours. Then, dimethylformamide dimethyl acetal (DFA, 17.8g, 0.15 mol) was added thereto and stirred at 70 ℃ for 4 hours, followed by terminating the reaction, thereby synthesizing a polyimide precursor.
Synthesis example 2]Synthesis of polyimide precursor (chemical formula 1)
A1000 mL beaker was charged with gamma-butyrolactone (GBL, 309g), and 2, 2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane (bis-APAF, 68.1g, 0.1860 moles), 4,' -diphenylamine (2.0g, 0.01 moles) and 1, 3-bis (3-aminopropyl) tetramethyldisiloxane (SiDA, 0.99g, 0.04 moles) were dissolved at 50 ℃. To this was added 3,3',4,4' -diphenylether tetracarboxylic dianhydride (ODPA, 47.8g, 0.154 mol) and stirred at 70 ℃ for 25 hours, and then phthalic anhydride (13.63g, 0.092 mol) was added to carry out a reaction for 2 hours. Then, dimethylformamide dimethyl acetal (DFA, 18.3g, 0.154 mol) was added thereto and stirred at 70 ℃ for 4 hours, followed by terminating the reaction, thereby synthesizing a polyimide precursor.
[ Synthesis example 3]Synthesis of polyimide precursor (chemical formula 1)
A1000 mL beaker was charged with gamma-butyrolactone (GBL, 329g) and 2, 2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane (bis-APAF, 71.8g, 0.196 mol) and 1, 3-bis (3-aminopropyl) tetramethyldisiloxane (SiDA, 0.99g, 0.04 mol) were dissolved at 50 ℃. To this, 3',4,4' -diphenylether tetracarboxylic dianhydride (ODPA, 32.3g, 0.104 mol) and 4,4' - (hexafluoroisopropylidene) diphthalic anhydride (6FDA, 22.2g, 0.05 mole) were added and stirred at 70 ℃ for 25 hours, and then phthalic anhydride (13.6g, 0.092 mol) was added to conduct a reaction for 2 hours. Then, dimethylformamide dimethyl acetal (DFA, 18.3g, 0.154 mol) was added thereto and stirred at 70 ℃ for 4 hours, followed by terminating the reaction, thereby synthesizing a polyimide precursor.
[ Synthesis example 4]Synthesis of polyimide precursor (chemical formula 1)
A polyimide precursor was synthesized in the same manner as in synthesis example 1, except that 1,2-epoxy-4-vinylcyclohexane (37.35g, 0.3 mol) and triethylamine (0.81g, 0.008 mol) were charged instead of dimethylformamide dimethyl acetal, and the reaction was terminated after stirring for 48 hours, thereby synthesizing a polyimide precursor.
Synthesis example 5]Synthesis of polyimide precursor (chemical formula 1)
A polyimide polymer was synthesized in the same manner as in synthesis example 2, except that 1,2-epoxy-4-vinylcyclohexane (38.25g, 0.308 mol) and triethylamine (0.81g, 0.008 mol) were charged instead of dimethylformamide dimethyl acetal, and the reaction was terminated after stirring for 48 hours, thereby synthesizing a polyimide precursor.
[ Synthesis example 6]Synthesis of polyimide precursor (chemical formula 1)
A polyimide precursor was synthesized in the same manner as in synthesis example 3, except that 1,2-epoxy-4-vinylcyclohexane (38.25g, 0.308 mol) and triethylamine (0.81g, 0.008 mol) were charged instead of dimethylformamide dimethyl acetal, and the reaction was terminated after stirring for 48 hours, thereby synthesizing a polyimide precursor.
[ Synthesis example 7]Synthesis of polyimide (chemical formula 2)
A1000 mL beaker was charged with gamma-butyrolactone (GBL, 294g) and 2, 2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane (bis-APAF, 49.81g, 0.136 mol) and 1, 3-bis (3-aminopropyl) tetramethyldisiloxane (SiDA, 0.99g, 0.04 mol) were dissolved at 50 ℃. To this was added 3,3',4,4' -diphenyl ether tetracarboxylic dianhydride (ODPA, 60.2g, 0.20 mol) and stirred at 50 ℃ for 4 hours, and then 3-aminophenol (13.1g, 0.12 mol) was charged to carry out a reaction for 2 hours. Then, 60mL of toluene was charged and reacted at 150 ℃ for 2 hours and at 180 ℃ for 2 hours, and then the reaction was terminated to synthesize polyimide.
Synthesis example 8]Synthesis of polyimide (chemical formula 2)
Gamma-butyrolactone (GBL, 313g) was charged into a 1000mL beaker, and 2, 2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane (bis-APAF, 71.79g, 0.196 mol) and 1, 3-bis (3-aminopropyl) tetramethyldisiloxane (SiDA, 0.99g, 0.04 mol) were dissolved at 50 ℃. To this was added 3,3',4,4' -diphenylether tetracarboxylic dianhydride (ODPA, 46.5g, 0.15 mol) and stirred at 70 ℃ for 4 hours, and then phthalic anhydride (14.8g, 0.10 mol) was added to carry out a reaction for 2 hours. Then, 60mL of toluene was charged and reacted at 150 ℃ for 2 hours and at 180 ℃ for 2 hours, and then the reaction was terminated to synthesize polyimide.
[ Synthesis example 9]Synthesis of polyimide precursor (chemical formula 1)
Gamma-butyrolactone (GBL, 316g) was charged into a 1000mL beaker, and 2, 2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane (bis-APAF, 71.8g, 0.196 mol) and 1, 3-bis (3-aminopropyl) tetramethyldisiloxane (SiDA, 0.99g, 0.04 mol) were dissolved at 50 ℃. To this, 4' - (hexafluoroisopropylidene) diphthalic anhydride (6FDA, 17.77g, 0.04 mol), 5- (2, 5-dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1, 2-dicarboxylic anhydride (18.5g, 0.07 mol) and 2,3,3',4' -biphenyltetracarboxylic dianhydride (17.7g, 0.06 mol) were added and stirred at 70 ℃ for 25 hours, and then phthalic anhydride (8.89g, 0.06 mol) was added and a reaction was additionally performed for 2 hours. Next, the temperature was lowered to 70 ℃ after raising the temperature of the reactor to 130 ℃ and performing a reaction for 30 hours. To this, 2-epoxy-4-vinylcyclohexane (29.8g, 0.24 mol) and triethylamine (0.81g, 0.008 mol) were added and stirred at 70 ℃ for 48 hours, and then the reaction was terminated to synthesize a polyimide precursor.
[ Synthesis example 10]Synthesis of polyimide precursor (chemical formula 1)
Gamma-butyrolactone (GBL, 321g) was charged into a 1000mL beaker, and 2, 2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane (bis-APAF, 71.8g, 0.196 mol) and 1, 3-bis (3-aminopropyl) tetramethyldisiloxane (SiDA, 0.99g, 0.04 mol) were dissolved at 50 ℃. To this, 4' - (hexafluoroisopropylidene) diphthalic anhydride (6FDA, 22.21g, 0.05 mol), 5- (2, 5-dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1, 2-dicarboxylic anhydride (13.21g, 0.05 mol) and 2,3,3',4' -biphenyltetracarboxylic dianhydride (20.6g, 0.07 mol) were added and stirred at 70 ℃ for 25 hours, and then phthalic anhydride (8.89g, 0.06 mol) was added and a reaction was additionally performed for 2 hours. Next, the temperature was lowered to 70 ℃ after raising the temperature of the reactor to 130 ℃ and performing a reaction for 30 hours. To this, 2-epoxy-4-vinylcyclohexane (19.9g, 0.16 mol) and triethylamine (0.81g, 0.008 mol) were added and stirred at 70 ℃ for 48 hours, and then the reaction was terminated to synthesize a polyimide precursor.
Synthesis example 11]Synthesis of polyimide precursor (chemical formula 1)
A1000 mL beaker was charged with gamma-butyrolactone (GBL, 327g) and 2, 2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane (bis-APAF, 71.79g, 0.196 mol) and 1, 3-bis (3-aminopropyl) tetramethyldisiloxane (SiDA, 0.99g, 0.04 mol) were dissolved at 50 ℃. To this, 4,4' - (hexafluoroisopropylidene) diphthalic anhydride (6FDA, 22.21g, 0.05 mol), 2,3,3',4' -biphenyltetracarboxylic dianhydride (14.7g, 0.05 mol) and 3,3',4,4' -diphenyl ether tetracarboxylic dianhydride (ODPA, 21.7g, 0.07 mol) were added and stirred at 70 ℃ for 25 hours, and then phthalic anhydride (8.89g, 0.06 mol) was added and reaction was additionally performed for 2 hours. Next, the temperature was lowered to 70 ℃ after raising the temperature of the reactor to 130 ℃ and performing a reaction for 30 hours. To this, 2-epoxy-4-vinylcyclohexane (19.9g, 0.16 mol) and triethylamine (0.81g, 0.008 mol) were added and stirred at 70 ℃ for 48 hours, and then the reaction was terminated to synthesize a polyimide precursor.
Synthesis example 12]Synthesis of polyimide precursor (chemical formula 3)
A1000 mL beaker was charged with gamma-butyrolactone (GBL, 327g) and 2, 2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane (bis-APAF, 71.79g, 0.196 mol) and 1, 3-bis (3-aminopropyl) tetramethyldisiloxane (SiDA, 0.99g, 0.04 mol) were dissolved at 50 ℃. To this, 4,4' - (hexafluoroisopropylidene) diphthalic anhydride (6FDA, 22.21g, 0.05 mol), 2,3,3',4' -biphenyltetracarboxylic dianhydride (14.7g, 0.05 mol) and 3,3',4,4' -diphenyl ether tetracarboxylic dianhydride (ODPA, 21.7g, 0.07 mol) were added and stirred at 70 ℃ for 25 hours, and then phthalic anhydride (8.89g, 0.06 mol) was added and reaction was additionally performed for 2 hours, thereby synthesizing polyamic acid.
Examples 1 to 26 and comparative examples 1 to 11]Production of photosensitive resin composition
The polyimides synthesized in synthesis examples 1 to 12 and polyimide precursors were mixed in the proportions shown in table 1 below to produce photosensitive resin compositions. Specifically, after confirming the solid content in the polyimides and polyimide precursors synthesized in synthesis examples 1 to 12, the contents of the quinonediazide and the thermal crosslinking agent were mixed at the ratio shown in table 1 below with respect to 100 parts by weight of the polymer resin. Next, a photosensitive resin composition having a total solid content of 13% was produced using a solvent mixed at a molar ratio of γ -butyrolactone (GBL), propyl methyl-3-methoxypropionate (MMP), and Propylene Glycol Methyl Ether (PGME) of 24:20: 56.
In the following Table 1, Tris-TPPA used as the quinonediazide compound is a compound represented by the following chemical formula 4-1-1, and Tris-THAP is a compound represented by the following chemical formula 4-2-1. Further, in the case of using the thermal crosslinking agent of the structure of chemical formula 5-2 or chemical formula 5-3, A is a thermal crosslinking agent in which n in chemical formula a is 1 and Ra is a methyl group.
[ chemical formula 4-1-1]
Figure BDA0003707861410000221
[ chemical formula 4-2-1]
Figure BDA0003707861410000222
[ Table 1]
Figure BDA0003707861410000223
Figure BDA0003707861410000231
Figure BDA0003707861410000241
Figure BDA0003707861410000251
(unit: parts by weight)
[ test examples]Evaluation of physical Properties
The photosensitive resin compositions of comparative examples 1 to 10 and examples 1 to 26, which were synthesized in the proportions described in table 1, were applied to a substrate. Next, after coating a thin film on a glass (glass) substrate using a spin coater, a film having a thickness of 2.0 μm was formed by drying at 120 ℃ for 2 minutes in a hot plate, and physical properties of the photoresist, such as sensitivity, residue (scum), crack (crack), chemical resistance, adhesive force, Organic Light Emitting Diode (OLED) reliability, were measured using the manufactured substrate, and the results are shown in table 2 below.
1. Sensitivity measurement
An intensity in a broad band (Broadband) was set to 20mW/cm using a pattern mask on the fabricated substrate 2 After irradiating with a 5 μm Contact Hole (Contact Hole) Critical Dimension (CD) forming standard Dose (Dose), development was performed at 23 ℃ for 1 minute using an aqueous solution of 2.38 parts by weight of tetramethylammonium hydroxide, followed by washing with ultrapure water for 1 minute. Next, curing was performed in an oven at 250 ℃ for 60 minutes, thereby obtaining a pattern film having a Critical Dimension (CD) of a contact hole of 5 μm. The appropriate sensitivity result value is 50 to 150 mJ/cm 2 。
2. Measurement of residue (Scum)
The inside of the pattern formed during the sensitivity measurement was observed by a Scanning Electron Microscope (SEM), and it was confirmed whether or not residues were present in the Line and Space (Line & Space) and the Contact Hole (Contact Hole). The case where the development residue is present is indicated by x, the case where the development residue is present only at the pattern boundary portion is indicated by Δ, and the case where no residue is present is indicated by o.
3. Crack (Crack) determination
The manufactured substrate was visually inspected and observed under a microscope of 100 magnifications, and marked with x in the case where cracks (Crack) were observed, marked with Δ in the case where cracks (Crack) were observed only in the edge portion of the coating layer, and marked with o in the case where no cracks (Crack) were observed.
4. Chemical resistance measurement
The manufactured substrate was immersed in methyl pyrrolidone (NMP) at 60 ℃ for 120 seconds, and the rate of change in the thickness of the cured film before and after immersion was measured, and was found to be insufficient
Figure BDA0003707861410000261
Is marked as-
Figure BDA0003707861410000264
The condition (B) is marked as O and is not less than 300
Figure BDA0003707861410000262
Is marked by Δ in the case of
Figure BDA0003707861410000263
In the above case, the index is X.
5. Adhesion measurement
A Pattern (Pattern) film was formed in the same manner as in the sensitivity measurement, and the adhesive force at different baking temperatures was compared with each other based on the case where the line width of 10 μm and the slit width were 1:1. In this case, the case where the adhesive force can be secured when pre-baking is performed at 90 ℃ to 100 ℃ is marked as "O", the case where the adhesive force can be secured when pre-baking is performed at 105 ℃ to 115 ℃ is marked as "Δ", and the case where the adhesive force can be secured when pre-baking is performed at 120 ℃ or higher or the other cases are marked as "X".
6. Organic Light Emitting Diode (OLED) reliability determination
A patterned (Pattern) film may be formed in the same manner as in the sensitivity measurement, and fig. 1 is a schematic view illustrating a state where a patterned (Pattern) film is substantially formed on patterned Indium Tin Oxide (ITO) and deposited to form an Electroluminescent (EL) lamp. As shown in fig. 1 described below, a packaging (Encapsulation) process is performed after Al is deposited as a Cathode (Cathode) on the upper portion. The time (T) for which the luminance was reduced by 3% in the On (On) state of the element was measured at 85 ℃ and 85% RH 97 ) And (4) carrying out measurement. When 1000 hours or more can be ensured, the mark is good, and when less than 1000 hours, the mark is x.
[ Table 2]
Figure BDA0003707861410000271
As shown in the above Table 2, comparative examples 1 to 3 use R included in the structural unit represented by the above chemical formula 1 3 The polyimide precursors of synthesis examples 1 to 3 having alkyl structures. In contrast, examples 1 to 3 use R included in the structural unit represented by chemical formula 1 3 Comparison of the polyimide precursors of synthesis examples 4 to 6, which are structures derived from epoxy compounds, revealed that the sensitivity of examples 1 to 3 was improved by about 10%, and physical property values such as residue (scum), crack (crack), chemical resistance, adhesive force, and Organic Light Emitting Diode (OLED) reliability were improved. As shown in comparative examples 4 to 7, in the case of using only a polyimide precursor having a structural unit represented by chemical formula 1 or a polyimide synthetic polymer resin having a structural unit represented by chemical formula 2, or using less than 5 wt% of a polyimide resin having a structural unit represented by chemical formula 2In the case where a polyimide precursor having a structural unit represented by the chemical formula 1 or a polyimide synthetic polymer resin having a structural unit represented by the chemical formula 2 is used, physical property values such as residue (scum), crack (crack), chemical resistance, adhesive force, and Organic Light Emitting Diode (OLED) reliability are inferior as compared to the examples 1 to 3.
As shown in comparative examples 8 to 11, when the content of the quinone diazide, which is a photosensitive substance, is less than 5% by weight as compared with the polymer resin, the sensitivity is extremely high (comparative examples 8 and 9). On the contrary, in the case where the content of the quinonediazide exceeds 50% by weight as compared with the polymer resin, the sensitivity is lowered, whereas physical property values such as residue (scum), crack (crack), chemical resistance, adhesive force, and reliability of the Organic Light Emitting Diode (OLED) are inferior as compared with the above examples 1 to 3.
As described in examples 1 to 21, the sensitivity, residue (scum), crack (crack), chemical resistance, adhesive force, and Organic Light Emitting Diode (OLED) reliability applicable to the Organic Light Emitting Diode (OLED) substrate are relatively excellent, and particularly, the chemical resistance is very excellent in examples 22 to 26 using a thermal crosslinking agent.
[ description of symbols ]
1: indium Tin oxide (ITO, Indium Tin oxide)
2: insulator (Insulator)
3: electroluminescent Lighting & aluminium (EL & Al, Electroluminescent Lighting & aluminium)

Claims (12)

1. A positive photosensitive resin composition comprising:
a polymer resin containing i) 5 to 95 wt% of a polyimide precursor having a structural unit represented by the following chemical formula 1, ii) 5 to 95 wt% of a polyimide precursor having a structural unit represented by the following chemical formula 2, and iii) 0 to 20 wt% of a polyimide precursor having a structural unit represented by the following chemical formula 3;
a quinone diazide compound containing 5 to 50 parts by weight relative to 100 parts by weight of the polymer resin; and the number of the first and second groups,
a solvent comprising 100 to 2,000 parts by weight relative to 100 parts by weight of the polymer resin:
[ chemical formula 1]
Figure FDA0003707861400000011
[ chemical formula 2]
Figure FDA0003707861400000012
[ chemical formula 3]
Figure FDA0003707861400000013
In the chemical formulas 1 to 3, R 1 And R 2 Each independently an organic group having a carbon number of 5 to 30, in which hydrogen may be substituted by hydroxyl (OH), methyl or fluorine, methylene may be substituted by oxygen or nitrogen, R 3 May be a substituent derived from an epoxy group.
2. The positive photosensitive resin composition according to claim 1,
the R is 3 Is a substituent represented by the following chemical formula 4:
[ chemical formula 4]
Figure FDA0003707861400000021
In the chemical formula 4, R 4 Is a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms, wherein hydrogen of the alkyl group may be substituted with 1 to 3 fluorine atoms or hydroxyl groups, and a methylene group of the alkyl group may be substituted with an alkenyl group, oxygen, nitrogen, an ester group (COO) or a carboxyl group (C ═ O).
3. The positive photosensitive resin composition according to claim 1,
the R is 3 A compound derived from a compound selected from the group consisting of epoxycyclohexylmethyl methacrylate, 1,2-epoxy-4-vinylcyclohexane, 3,4- (epoxycyclohexane) methyl-3',4' -epoxycyclohexylcarboxylate, and epsilon-caprolactone modified with 3,4-epoxycyclohexylmethyl 3, 4-epoxycyclohexanecarboxylate.
4. The positive photosensitive resin composition according to claim 1,
the weight average molecular weight of the polyimide precursor having the structural unit represented by the chemical formula 1, the polyimide precursor having the structural unit represented by the chemical formula 2, and the polyimide precursor having the structural unit represented by the chemical formula 3 is 3,500 to 20,000, respectively.
5. The positive photosensitive resin composition according to claim 1,
the polymer resin includes 50 to 95 wt% of polyimide having a structural unit represented by chemical formula 2.
6. The positive photosensitive resin composition according to claim 1,
the quinonediazide compound is obtained by the reaction of a phenolic compound selected from the group consisting of compounds represented by the following chemical formulae 4-1 to 4-3 with a naphthoquinonediazide sulfonic acid halogen compound:
[ chemical formula 4-1]
Figure FDA0003707861400000031
[ chemical formula 4-2]
Figure FDA0003707861400000032
[ chemical formulas 4-3]
Figure FDA0003707861400000041
In the chemical formulas 4-1 to 4-3, R 31 To R 36 Each independently hydrogen, halogen, hydroxy, alkyl of 1 to 4 carbon atoms or alkenyl of 2 to 4 carbon atoms, R 37 And R 38 Each independently hydrogen, halogen or alkyl having a carbon number of 1 to 4, R 39 Is hydrogen or alkyl having a carbon number of 1 to 4.
7. The positive photosensitive resin composition according to claim 1,
the solvent is selected from the group consisting of gamma-butyrolactone (GBL), N-methylpyrrolidone (NMP), Propylene Glycol Methyl Ether Acetate (PGMEA), Ethyl Lactate (EL), propyl methyl-3-methoxypropionate (MMP), Propylene Glycol Methyl Ether (PGME), and mixtures thereof.
8. The positive photosensitive resin composition according to claim 1,
the positive photosensitive resin composition further includes an additive selected from the group consisting of a thermal crosslinking agent, a thermal acid generator, an Ultraviolet (UV) absorber, and a mixture thereof.
9. The positive photosensitive resin composition according to claim 8,
the thermal crosslinking agent includes a functional group represented by the following chemical formula 5:
[ chemical formula 5]
Figure FDA0003707861400000042
In the chemical formula 5, a is the following chemical formula a, and in the following chemical formula a, n is an integer of 1 to 6, Ra is an alkyl group having a carbon number of 1 to 3:
[ chemical formula a ]
Figure FDA0003707861400000051
10. The positive photosensitive resin composition according to claim 8,
the thermal crosslinking agent is selected from the group consisting of compounds represented by the following chemical formulas 5-1 to 5-4:
[ chemical formula 5-1]
Figure FDA0003707861400000052
[ chemical formula 5-2]
Figure FDA0003707861400000053
[ chemical formulas 5-3]
Figure FDA0003707861400000061
[ chemical formulas 5-4]
Figure FDA0003707861400000062
In the chemical formulas 5-1 to 5-4, a is the following chemical formula a, and in the following chemical formula a, n is an integer of 1 to 6, Ra is an alkyl group having a carbon number of 1 to 3:
[ chemical formula a ]
Figure FDA0003707861400000063
11. The positive photosensitive resin composition according to claim 8,
the thermal crosslinking agent is contained in an amount of 10 to 50 parts by weight relative to 100 parts by weight of the polymer resin.
12. A display element is provided which is capable of displaying a desired image,
a substrate comprising a driver circuit, a planarizing layer, a first electrode, an insulating layer, a light-emitting layer, and a second electrode, wherein at least one of the planarizing layer and the insulating layer is formed using the positive photosensitive resin composition according to claim 1.
CN202080089486.4A 2019-12-31 2020-12-29 Positive photosensitive resin composition Pending CN114846406A (en)

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