KR101102256B1 - Polyimide polymer and Positive polyimide photosensitive resin composition comprising the same - Google Patents
Polyimide polymer and Positive polyimide photosensitive resin composition comprising the same Download PDFInfo
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- KR101102256B1 KR101102256B1 KR1020070130941A KR20070130941A KR101102256B1 KR 101102256 B1 KR101102256 B1 KR 101102256B1 KR 1020070130941 A KR1020070130941 A KR 1020070130941A KR 20070130941 A KR20070130941 A KR 20070130941A KR 101102256 B1 KR101102256 B1 KR 101102256B1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
Abstract
본 발명은 폴리이미드계 고분자 화합물, 및 이를 포함하는 포지티브형 폴리이미드 감광성 수지 조성물에 관한 것으로서, 본 발명에서는 상기 폴리이미드 고분자 화합물의 제조시 특정의 반복단위 값을 만족하도록 하여 알칼리 현상액에 대한 용해도를 적절하게 조절할 수 있어 이를 감광성 수지 조성물에 포함시킬 경우, 365nm 자외선 노광에 대한 감도를 극대화시킬 수 있고, 해상도와 잔막율이 높으며, 기재에 대한 우수한 접착력을 가지므로, 반도체 보호막이나 OLED의 절연막에 적용가능하다.The present invention relates to a polyimide-based high molecular compound, and a positive polyimide photosensitive resin composition comprising the same, and in the present invention, solubility in an alkaline developer is satisfied by satisfying a specific repeating unit value during the preparation of the polyimide high-molecular compound. When it is appropriately controlled and included in the photosensitive resin composition, it can maximize sensitivity to 365nm ultraviolet exposure, has high resolution and residual film ratio, and has excellent adhesion to a substrate, and thus is applied to an insulating film of a semiconductor protective film or OLED. It is possible.
폴리이미드*감광성*조성물*현상액*용해도 Polyimide * Photosensitive * Composition * Developer * Solubility
Description
본 발명은 폴리이미드계 고분자 화합물과 이를 함유하는 포지티브형 감광성 수지 조성물, 및 상기 수지 조성물을 이용한 폴리이미드 필름으로 된 반도체 보호막 및 OLED 절연막에 관한 것이다. The present invention relates to a polyimide polymer compound, a positive photosensitive resin composition containing the same, and a semiconductor protective film and an OLED insulating film made of a polyimide film using the resin composition.
폴리이미드 화합물은 열안정성이 뛰어나고, 기계적, 전기적, 및 화학적 특성이 우수하기 때문에, 최근, 이를 포함하는 감광성 수지를 비롯한 감광성 절연막의 용도가 반도체 뿐만 아니라 디스플레이 분야에까지 확대되고 있다. 따라서, 종래 통상의 폴리이미드 감광성 수지에서 요구되지 않았던 미세 패턴 형성에 있어서 막 감소나 팽윤이 없는 폴리이미드계 고분자 화합물이 요구되고 있다.Since polyimide compounds are excellent in thermal stability and excellent in mechanical, electrical, and chemical properties, in recent years, the use of photosensitive insulating films including photosensitive resins including the same has been extended to not only semiconductors but also display fields. Therefore, there is a demand for a polyimide polymer compound having no film reduction or swelling in the formation of fine patterns, which was not required in conventional polyimide photosensitive resins.
한편, 감광성 수지 조성물에 사용 가능하도록 폴리이미드 수지에 감광성을 부여하는 방법으로는, 통상 가교가능한 관능기를 폴리이미드 전구체에 화학적으로 결합시키거나, 가교가능한 단량체를 혼합시키는 것이 사용되어 왔다. On the other hand, as a method of providing photosensitivity to a polyimide resin so that it can be used for the photosensitive resin composition, chemically bonding a crosslinkable functional group to a polyimide precursor, or mixing a crosslinkable monomer has been used.
예를 들면, 폴리아믹산이나 측쇄에 산성기를 갖는 폴리아믹산 에스테르 또는 폴리이미드에 퀴논디아지드 화합물을 첨가한 것 등이 있다. For example, the polyamic acid, the polyamic acid ester which has an acidic group in a side chain, or the polyimide added the quinonediazide compound, etc. are mentioned.
그러나, 상기 폴리아믹산은 알칼리 현상액에 대한 용해도가 너무 좋기 때문에 현상시 막 감소가 큰 문제가 있어, 아민 등을 첨가해야 한다. However, since the polyamic acid has solubility in an alkaline developer is too good, there is a big problem in film reduction during development, it is necessary to add an amine or the like.
또한, 측쇄에 산성기를 갖는 폴리이미드 또는 폴리아믹산 에스테르는 해상성 등의 면에서는 우수하지만 경화 후에도 고분자 중에 산성기가 남아 있어 최종 경화막의 흡수율이 높거나, 내알칼리성이 저하되는 문제가 있었다. In addition, the polyimide or polyamic acid ester having an acid group in the side chain is excellent in terms of resolution and the like, but there is a problem that the acid group remains in the polymer even after curing, resulting in high water absorption of the final cured film or lower alkali resistance.
따라서, 알칼리 현상액에 대한 적절한 용해도를 가지면서, 미세 패턴 형성에 있어서 막 감소나 팽윤이 없는 우수한 현상성을 가지는 폴리이미드 화합물의 개발이 시급한 실정이다. Therefore, there is an urgent need to develop a polyimide compound having an excellent solubility in an alkaline developer and having excellent developability without film reduction or swelling in forming a fine pattern.
이에 본 발명은 종래 폴리이미드를 감광성 수지 조성물이 가지는 문제들을 해결하기 위한 것으로서, 본 발명의 목적은 알칼리 현상액에 대한 용해도가 높고, 현상성이 우수한 폴리이미드계 고분자 화합물을 제공하는 데 있다. Accordingly, the present invention is to solve the problems that the conventional polyimide has a photosensitive resin composition, an object of the present invention is to provide a polyimide-based polymer compound having high solubility in alkaline developing solution and excellent developability.
또한, 본 발명의 다른 목적은 상기와 같은 특성을 가지는 폴리이미드계 고분자 화합물을 포함하는 폴리이미드 감광성 수지 조성물을 제공하는 데도 있다.Another object of the present invention is to provide a polyimide photosensitive resin composition containing a polyimide polymer compound having the above characteristics.
또한, 본 발명의 추가의 다른 목적은 상기 폴리이미드 감광성 수지 조성물로부터 얻어진 감광성 필름을 포함하는 OLED의 절연막 또는 반도체 보호막을 제공하는 데도 있다.Further, another object of the present invention is to provide an insulating film or a semiconductor protective film of an OLED containing a photosensitive film obtained from the polyimide photosensitive resin composition.
본 발명에서는 폴리이미드계 고분자 화합물의 제조시 특정의 반복단위 값을 만족시키도록 하여 알칼리 현상액에 대한 용해도를 적절하게 조절할 수 있도록 하였다. In the present invention, solubility in an alkaline developer can be properly adjusted by satisfying a specific repeating unit value in preparing a polyimide polymer compound.
본 발명은 특정의 반복단위 값을 만족하는 폴리이미드계 고분자 화합물을 제조하고, 이를 감광성 수지 조성물에 포함시킴으로써 알칼리 현상액에 대한 용해도를 적절하게 조절할 수 있기 때문에 365nm 자외선 노광에 대한 감도를 극대화시킬 수 있고, 해상도와 잔막율이 높으며, 기재에 대한 우수한 접착력을 가지므로 반도체 보호막이나 OLED의 절연막에 적용가능하다.The present invention can maximize the sensitivity to 365nm ultraviolet exposure because it is possible to appropriately control the solubility in the alkaline developer by preparing a polyimide-based polymer compound that satisfies a specific repeat unit value, and by including it in the photosensitive resin composition Its high resolution, high residual film ratio and excellent adhesion to the substrate make it applicable to semiconductor protective films and insulating films of OLEDs.
상기와 같은 목적을 달성하기 위한 본 발명의 폴리이미드 고분자 화합물은 다음 화학식 1로 표시되는 반복단위를 포함하고, 여기서 m+n이 100이라고 가정했을 때, m은 60 내지 90이고, n은 10 내지 40을 만족하는 것을 그 특징으로 한다. The polyimide polymer compound of the present invention for achieving the above object includes a repeating unit represented by the following formula (1), where m + n is 100, m is 60 to 90, n is 10 to It is characterized by satisfying 40.
상기 식에서, X는 서로 같거나 다른 것으로서 각각 4가의 방향족 또는 지방족 유기기이고, Y1과 Y2는 2가의 방향족 또는 지방족 유기기이다.Wherein X is the same or different from each other and is a tetravalent aromatic or aliphatic organic group, and Y 1 and Y 2 are a divalent aromatic or aliphatic organic group.
또한, 본 발명의 포지티브형 폴리이미드 감광성 수지 조성물은 상기 화학식 1로 표시되는 폴리이미드계 고분자 화합물을 포함하는 것을 그 특징으로 한다. In addition, the positive polyimide photosensitive resin composition of the present invention is characterized in that it comprises a polyimide polymer compound represented by the formula (1).
추가로 본 발명은 상기 포지티브형 폴리이미드 감광성 수지 조성물로부터 제조된 감광성 필름을 포함하는 절연막 또는 반도체 보호막을 제공함을 그 특징으로 한다. Furthermore, this invention provides the insulating film or semiconductor protective film containing the photosensitive film manufactured from the said positive polyimide photosensitive resin composition.
이하, 본 발명을 더욱 상세하게 설명한다.Hereinafter, the present invention will be described in more detail.
1. 폴리이미드계 고분자 화합물1. Polyimide Polymer Compound
본 발명에 따른 폴리이미드계 고분자 화합물은 다음 화학식 1로 표시된다.The polyimide polymer compound according to the present invention is represented by the following formula (1).
화학식 1Formula 1
상기 식에서, X는 서로 같거나 다른 것으로서 각각 4가의 방향족 또는 지방족 유기기이고, Y1과 Y2는 2가의 방향족 또는 지방족 유기기이고, m+n이 100이라고 가정했을 때, m은 60 내지 90이고, n은 10 내지 40을 만족한다. Wherein X is the same or different from each other and is a tetravalent aromatic or aliphatic organic group, Y 1 and Y 2 are a divalent aromatic or aliphatic organic group, and m is 60 to 90 assuming that m + n is 100. And n satisfies 10 to 40.
이에, 상기 식에서 X는 다음 치환기 중에서 선택된 1종 이상의 것이 바람직하다. In the above formula, X is preferably one or more selected from the following substituents.
또한, 상기 식에서 Y1은 디아민에 유래하는 2가의 방향족 또는 지방족 유기기 로서, 특별히 카르복실기를 포함하는 것이 바람직하다. 이러한 카르복실기를 갖는 디아민으로는 2,4-디아미노벤조익산, 2,5-디아미노벤조익산, 3,5-디아미노벤조익산, 3,5-비스(4-아미노페녹시)벤조익산, 4-(4,6-디아미노-2,2-디메틸-1,3,5-트리아진-1(2H)-일) 벤조익산, 4,6-디아미노-1,3-벤젠디카르복실산, 2,5-디아미노-1,4-벤젠디카르복실산, 비스(4-아미노-3-카르복시페닐)에테르, 비스(4-아미노-3,5-디카르복시페닐)에테르, 비스(4-아미노-3-카르복시페닐)술폰, 비스(4-아미노-3,5-디카르복시페닐)술폰, 4,4'-디아미노-3,3'-디카르복시비페닐, 4,4'-디아미노-3,3'-디카르복시-5,5'-디메틸비페닐, 4,4'-디아미노-3,3'-디카르복시-5,5'-디메톡시비페닐, 1,4-비스(4-아미노-3-카르복시페녹시)벤젠, 1,3-비스(4-아미노-3-카르복시페녹시)벤젠, 비스[4-(4-아미노-3-카르복시페녹시)페닐]술폰, 비스[4-(4-아미노-3-카르복시페녹시)페닐]프로판, 및 2,2-비스[4-(4-아미노-3-카르복시페녹시)페닐]헥사플루오로프로판으로 이루어진 그룹으로부터 선택된 1종 또는 2종 이상의 것이다.In the above formula, Y 1 is a divalent aromatic or aliphatic organic group derived from diamine, and particularly preferably contains a carboxyl group. Examples of the diamine having such a carboxyl group include 2,4-diaminobenzoic acid, 2,5-diaminobenzoic acid, 3,5-diaminobenzoic acid, 3,5-bis (4-aminophenoxy) benzoic acid, 4 -(4,6-diamino-2,2-dimethyl-1,3,5-triazin-1 (2H) -yl) benzoic acid , 4,6-diamino-1,3-benzenedicarboxylic acid , 2,5-diamino-1,4-benzenedicarboxylic acid, bis (4-amino-3-carboxyphenyl) ether, bis (4-amino-3,5-dicarboxyphenyl) ether, bis (4 -Amino-3-carboxyphenyl) sulfone, bis (4-amino-3,5-dicarboxyphenyl) sulfone, 4,4'-diamino-3,3'-dicarboxybiphenyl, 4,4'-dia Mino-3,3'-dicarboxy-5,5'-dimethylbiphenyl, 4,4'-diamino-3,3'-dicarboxy-5,5'-dimethoxybiphenyl, 1,4-bis (4-amino-3-carboxyphenoxy) benzene, 1,3-bis (4-amino-3-carboxyphenoxy) benzene, bis [4- (4-amino-3-carboxyphenoxy) phenyl] sulfone, Bis [4- (4-amino-3-carboxyphenoxy) phenyl] propane, and 2,2-ratio [4- (4-amino-3-carboxy) phenyl] to one or two or more selected from the group consisting of hexafluoropropane.
특별히 본 발명에서는 상기 Y1으로 다음 치환기 중에서 선택된 1종 이상의 것을 사용하는 것이 더욱 바람직하다. In particular, in the present invention, it is more preferable to use one or more selected from the following substituents as Y 1 .
또한, 상기 식에서 Y2는 디아민에 유래하는 2가의 방향족 또는 지방족 유기기로서, 다음 치환기 중에서 선택된 1종 이상의 것이 바람직하다. In the above formula, Y 2 is a divalent aromatic or aliphatic organic group derived from diamine, and at least one selected from the following substituents is preferable.
특별히 본 발명의 상기 화학식 1로 표시되는 폴리이미드계 고분자 화합물은 m과 n의 값이 중요한 의미를 가지는 바, 반복단위 m과 n의 값에 따라 알칼리 현상액에 대한 용해도를 조절할 수 있다. 즉, 본 발명의 상기 폴리이미드계 고분자 화합물은 폴리이미드 공중합체로서 m+n이 100이라고 가정했을 때, m은 60 내지 90이고, n은 10 내지 40을 만족하는 것이 바람직하다. Particularly, in the polyimide polymer compound represented by Chemical Formula 1 of the present invention, since the values of m and n have an important meaning, the solubility in the alkaline developer can be adjusted according to the values of the repeating units m and n. That is, when the polyimide polymer compound of the present invention assumes that m + n is 100 as the polyimide copolymer, m is 60 to 90, and n is preferably 10 to 40.
만일 m의 값이 90을 초과할 경우에는 알칼리 현상액에 대한 용해도가 너무 높아져 원하는 패턴이 남아있지 못하는 문제점이 있고, 또한, m의 값이 60보다 적어지면 알칼리 현상액에 대한 용해도가 너무 낮아 패턴이 형성되지 못하는 문제가 있다. If the value of m exceeds 90, there is a problem in that the solubility in the alkaline developer is too high and the desired pattern does not remain.In addition, when the value of m is less than 60, the solubility in the alkaline developer is too low to form a pattern. There is no problem.
상기 본 발명의 폴리이미드계 고분자 화합물의 제조 방법은 통상의 폴리이미드계 중합체의 중합 방법에 따르며, 특별히 한정되지 않는다. The manufacturing method of the said polyimide high polymer compound of this invention is based on the polymerization method of a normal polyimide type polymer, and is not specifically limited.
통상적으로, 산무수물과 디아민을 반응 중합시켜 폴리이미드 전구체인 폴리아믹산을 제조하고, 이를 탈수 폐환시켜 폴리이미드계 중합체로 제조한다.Typically, an acid anhydride and a diamine are reacted and polymerized to prepare a polyamic acid as a polyimide precursor, which is then dehydrated and closed to prepare a polyimide polymer.
상기 산무수물은 무수 피로멜리트산, 3,3',4,4'-비페닐테트라카르복실산 이무수물, 3,3',4,4'-벤조페논테트라카르복실산 이무수물, 3,3',4,4'-디페닐에테르테트라카르복실산 이무수물, 3,3',4,4'-디페닐술폰테트라카르복실산 이무수물, 2,2-비스(3,4-디카르복시페닐)헥사플루오로이소프로필리덴 이무수물과 같은 방향족 테트라카르복실산 무수물 등을 들 수 있다. 용해성의 관점에서는 3,3',4,4'-비페닐테트라카르복실산 이무수물, 3,3',4,4'-벤조페논테트 라카르복실산 이무수물, 4,4'-헥사플루오로이소프로필리덴디프탈산 무수물, 3,3',4,4'-디페닐술폰테트라카르복실산 이무수물 등이 바람직하다.The acid anhydride is pyromellitic anhydride, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride, 3,3', 4,4'-benzophenonetetracarboxylic dianhydride, 3,3 ', 4,4'-diphenylethertetracarboxylic dianhydride, 3,3', 4,4'-diphenylsulfontetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl Aromatic tetracarboxylic anhydrides, such as the hexafluoro isopropylidene dianhydride, etc. are mentioned. From the viewpoint of solubility, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride, 3,3', 4,4'-benzophenonetetracarboxylic dianhydride, 4,4'-hexafluoro And isopropylidene diphthalic anhydride, 3,3 ', 4,4'-diphenylsulfontetracarboxylic dianhydride and the like are preferable.
또한, 1,2,3,4-시클로부탄테트라카르복실산 이무수물, 1,2-디메틸-1,2,3,4-시클로부탄테트라카르복실산 이무수물, 1,2,3,4-테트라메틸-1,2,3,4-시클로부탄테트라카르복실산 이무수물, 1,2,3,4-시클로펜탄테트라카르복실산 이무수물, 1,2,4,5-시클로헥산테트라카르복실산 이무수물, 3,4-디카르복시-1,2,3,4-테트라히드로-1-나프탈렌 숙신산 이무수물, 5-(2,5-디옥소테트라히드로푸릴)-3-메틸-3-시클로헥센-1,2-디카르복실산 이무수물, 2,3,5-트리카르복시-2-시클로펜탄 아세트산 이무수물, 비시클로[2.2.2]옥토-7-엔-2,3,5,6-테트라카르복실산 이무수물, 2,3,4,5-테트라히드로푸란테트라카르복실산 이무수물, 3,5,6-트리카르복시-2-노르보르난 아세트산 이무수물과 같은 지환식 테트라카르복실산 이무수물, 1,2,3,4-부탄테트라카르복실산 이무수물과 같은 지방족 테트라카르복실산 이무수물을 들 수 있다.Further, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2-dimethyl-1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2,3,4- Tetramethyl-1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2,3,4-cyclopentanetetracarboxylic dianhydride, 1,2,4,5-cyclohexanetetracarboxylic Acid dianhydride, 3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthalene succinic dianhydride, 5- (2,5-dioxotetrahydrofuryl) -3-methyl-3-cyclo Hexene-1,2-dicarboxylic dianhydride, 2,3,5-tricarboxy-2-cyclopentane acetic dianhydride, bicyclo [2.2.2] octo-7-ene-2,3,5,6 -Alicyclic tetracarboxylics such as tetracarboxylic dianhydride, 2,3,4,5-tetrahydrofurantetracarboxylic dianhydride, 3,5,6-tricarboxy-2-norbornane acetic dianhydride Aliphatic tetracarboxylic dianhydrides such as acid dianhydrides, 1,2,3,4-butanetetracarboxylic dianhydrides It may be water.
상기 산무수물과 디아민의 반응온도는 -20 내지 150℃, 바람직하게는 -5 내지 100℃에서 선택할 수 있다. The reaction temperature of the acid anhydride and diamine can be selected from -20 to 150 ℃, preferably -5 to 100 ℃.
본 발명의 폴리이미드계 고분자 화합물의 제조시, 상기 산무수물과 디아민의 반응 몰비는 통상 1:1 내지 5:4 인 것이 바람직하다. In the preparation of the polyimide polymer compound of the present invention, the reaction molar ratio of the acid anhydride and diamine is preferably 1: 1 to 5: 4.
또한, 상기 디아민과 산무수물의 반응시에 사용되는 극성 용매로는 N,N-디메틸포름아미드, N,N-디메틸아세트아미드, N-메틸피롤리돈, N-비닐피롤리돈, N-메틸카프로락탐, 디메틸술폭시드, 테트라메틸요소, 피리딘, 디메틸술폰, 헥사메틸술폭시드, m-크레졸, γ-부티로락톤 등을 단독으로 또는 혼합하여 사용한다. In addition, polar solvents used in the reaction of the diamine and the acid anhydride include N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone, N-vinylpyrrolidone, and N-methyl. Caprolactam, dimethyl sulfoxide, tetramethyl urea, pyridine, dimethyl sulfone, hexamethyl sulfoxide, m-cresol, γ-butyrolactone and the like are used alone or in combination.
이렇게 얻어진 폴리이미드의 전구체인 폴리아믹산을 메탄올 또는 에탄올 등의 용매 중에서 침전, 분리시켜서 회수하여 이용한다. The polyamic acid, which is a precursor of the polyimide thus obtained, is precipitated and separated from a solvent such as methanol or ethanol and recovered.
상기 얻어진 폴리이미드계 고분자 화합물은 중량평균분자량이 15,000 내지 80,000 인 것이 바람직하다.The obtained polyimide polymer compound preferably has a weight average molecular weight of 15,000 to 80,000.
또한, 이의 고유점도는 0.05 내지 0.4 dl/g, 바람직하기로는 0.1 내지 0.35 dl/g이며, 유리전이온도는 250 내지 350℃인 것이 바람직하다. In addition, its intrinsic viscosity is 0.05 to 0.4 dl / g, preferably 0.1 to 0.35 dl / g, the glass transition temperature is preferably 250 to 350 ℃.
2. 폴리이미드 감광성 수지 조성물2. Polyimide Photosensitive Resin Composition
본 발명의 포지티브형 폴리이미드 감광성 수지 조성물은 상기 화학식 1로 표시되는 폴리이미드계 고분자 화합물을 포함하며, 여기에 감광성 산발생제, 접착증진제, 계면활성제, 및 용매를 포함한다.The positive polyimide photosensitive resin composition of the present invention includes a polyimide polymer compound represented by Chemical Formula 1, and includes a photosensitive acid generator, an adhesion promoter, a surfactant, and a solvent.
본 발명의 감광성 수지 조성물은 상기 폴리이미드계 고분자 화합물 100중량부에 대하여 감광성 산발생제 1 내지 50중량부, 접착증진제 0.5 내지 10 중량부, 계면활성제 0.1 내지 1 중량부, 및 용매 200 내지 650 중량부로 포함한다. The photosensitive resin composition of the present invention is 1 to 50 parts by weight of a photosensitive acid generator, 0.5 to 10 parts by weight of adhesion promoter, 0.1 to 1 part by weight of surfactant, and 200 to 650 weight of solvent based on 100 parts by weight of the polyimide polymer compound. We include with wealth.
또한, 본 발명의 폴리이미드계 고분자 화합물은 상기 화학식 1로 표시되는 폴리이미드 화합물 이외에, 다른 폴리이미드 중합체를 포함할 수도 있다.In addition, the polyimide polymer compound of the present invention may contain another polyimide polymer in addition to the polyimide compound represented by the formula (1).
본 발명의 감광성 수지 조성물에 포함되는 감광성 산발생제는 통상의 감광성 수지 조성물에 포함되는 것이면 특별히 한정되지 않으며, 바람직하기로는 다음 화학식에서 선택된 것이다.The photosensitive acid generator included in the photosensitive resin composition of the present invention is not particularly limited as long as it is included in a common photosensitive resin composition, and is preferably selected from the following chemical formulas.
또한, 접착증진제는 기판과의 접착성을 향상시키는 작용을 갖는 성분으로, 예를 들면 카르복실기, 메타클로로일기, 비닐기, 이소시아네이트기, 에폭시기 등의 반응성 관능기를 갖는 실란 커플링제가 바람직하다. 구체적으로는 트리메톡시실릴벤조산, γ-메타크릴로일옥시프로필트리메톡시실란, 비닐트리아세톡시실란, 비닐트리메톡시실란, γ-이소시아네이트프로필트리에톡시실란, γ-글리시독시프로필트리메톡시실란, 및 β-(3,4-에폭시시클로헥실)에틸트리메톡시실란으로 이루어진 그룹 으로부터 선택된 1종 이상이며, 이에 한정되지는 않는다. In addition, the adhesion promoter is a component having an effect of improving the adhesion to the substrate, for example, a silane coupling agent having a reactive functional group such as a carboxyl group, a metachloroyl group, a vinyl group, an isocyanate group, an epoxy group is preferable. Specifically, trimethoxysilylbenzoic acid, γ-methacryloyloxypropyltrimethoxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane, γ-isocyanatepropyltriethoxysilane, γ-glycidoxypropyltri It is at least one selected from the group consisting of methoxysilane and β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, but is not limited thereto.
또한, 계면활성제는 기판에 대한 코팅성과 도포성, 균일성 및 얼룩 제거를 향상시키는 작용을 갖는 성분으로, 불소계 계면활성제, 실리콘계 계면활성제 및 비이온계 계면활성제로 이루어진 그룹으로부터 선택된 1종 이상이며, 이에 한정되지는 않는다.In addition, the surfactant is a component having the effect of improving the coating property and coating property, uniformity and stain removal on the substrate, and is at least one selected from the group consisting of fluorine-based surfactants, silicone-based surfactants and non-ionic surfactants, It is not limited to this.
또한, 용매는 상기 폴리이미드계 고분자 화합물을 용해시킬 수 있는 것이면 특별히 한정되지 않으며, 예를 들면, N,N-디메틸포름아미드, N,N-디메틸아세트아미드, N-메틸피롤리돈, N-비닐피롤리돈, N-메틸카프로락탐, 디메틸술폭시드, 테트라메틸요소, 피리딘, 디메틸술폰, 헥사메틸술폭시드, m-크레졸, γ-부티로락톤, 에틸셀로솔브, 부틸셀로솔브, 에틸카르비톨, 부틸카르비톨, 에틸카르비톨 아세테이트, 부틸카르비톨 아세테이트, 에틸렌글리콜, 젖산에틸, 젖산부틸, 시클로헥사논, 및 시클로펜타논으로 이루어진 그룹으로부터 선택된 1종 이상이다. In addition, the solvent is not particularly limited as long as it can dissolve the polyimide polymer compound, and examples thereof include N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone, and N-. Vinylpyrrolidone, N-methylcaprolactam, dimethyl sulfoxide, tetramethylurea, pyridine, dimethyl sulfone, hexamethyl sulfoxide, m-cresol, γ-butyrolactone, ethyl cellosolve, butyl cellosolve, ethyl Carbitol, butylcarbitol, ethylcarbitol acetate, butylcarbitol acetate, ethylene glycol, ethyl lactate, butyl lactate, cyclohexanone, and cyclopentanone.
상기와 같은 구체 조성을 가지는 본 발명의 포지티브형 감광성 폴리이미드 수지 조성물은 실리콘 웨이퍼 기판 등의 기재 상에 스핀코팅, 슬릿스핀코팅, 롤코팅, 다이코팅, 커튼 코팅 등의 통상의 방법을 이용하여 도포하고, 노광, 및 현상 공정을 거쳐 형성시킨다. 노광 및 현상 공정 역시 통상의 감광성 수지 조성물을 이용한 감광층 형성시 사용되는 방법을 사용하며, 특별히 한정되지 않는다.The positive photosensitive polyimide resin composition of the present invention having the specific composition as described above is applied onto a substrate such as a silicon wafer substrate by using a conventional method such as spin coating, slit spin coating, roll coating, die coating, curtain coating, or the like. It forms through the exposure, and image development process. Exposure and development processes also use the method used at the time of forming the photosensitive layer using a normal photosensitive resin composition, and are not specifically limited.
상기 노광공정에 있어서 상기 광조사 수단으로부터 조사되는 광으로서는, 특별히 제한은 없고 목적에 따라서 적당히 선택할 수 있으며 전자파, 자외선으로부터 가시광, 전자선, X-선, 레이저광 등을 들 수 있다.There is no restriction | limiting in particular as light irradiated from the said light irradiation means in the said exposure process, According to the objective, it can select suitably, Visible light, an electron beam, an X-ray, a laser beam etc. are mentioned from electromagnetic waves and an ultraviolet-ray.
상기 광조사 수단에 의한 광의 조사방법으로서는, 특별히 제한은 없고 목적에 따라서 적당히 선택할 수 있으며 예를 들면 고압수은등, 크세논등, 카본아크등, 할로겐 램프, 복사기용 냉음극관, LED, 반도체 레이저 등의 공지의 광원에 의해 조사하는 방법을 들 수 있다. There is no restriction | limiting in particular as a irradiation method of the light by the said light irradiation means, According to the objective, it can select suitably, For example, well-known, such as a high pressure mercury lamp, a xenon lamp, a carbon arc lamp, a halogen lamp, a cold cathode tube for copiers, an LED, a semiconductor laser, etc. The method of irradiating with the light source of this is mentioned.
상기 현상공정은 상기 노광 공정에 의해 상기 감광층을 노광하고, 상기 감광층의 노광한 영역을 경화시킨 후, 미경화 영역을 제거함으로써 현상하여 패턴을 형성하는 공정이다.The said developing process is a process of exposing the said photosensitive layer by the said exposure process, hardening the exposed area | region of the said photosensitive layer, and developing by removing a non-hardened area | region, and forming a pattern.
상기 현상액으로서는, 특별히 제한은 없고 목적에 따라서 적당히 선택할 수 있으며 예를 들면, 알칼리 금속 또는 알칼리 토금속의 수산화물 혹은 탄산염, 탄산수소염, 암모니아수, 4급 암모늄염의 수용액 등을 바람직하게 들 수 있다. 이들 중에서도, 0.38 내지 2.39중량%의 수산화테트라메틸암모늄 수용액이 특히 바람직하다. There is no restriction | limiting in particular as said developing solution, According to the objective, it can select suitably, For example, the aqueous solution of the hydroxide or carbonate, hydrogencarbonate, ammonia water, a quaternary ammonium salt of alkali metal or alkaline-earth metal, etc. are mentioned preferably. Among these, 0.38-2.39 weight% of tetramethylammonium hydroxide aqueous solution is especially preferable.
전체적인 공정은 상기 감광성 조성물을 실리콘 웨이퍼 기판에 스핀 코팅(spin coating)시키고, 약 120℃에서 2분 동안 전열 처리(prebake)시켜 필름을 형성시킨다. 상기 필름을 포토마스크(photomask)를 이용하여 i, g, h 라인의 단일 자외선이나 또는 혼합광의 자외선을 사용하여, 노광량은 코팅된 필름의 두께에 따라 다르나 통상적으로 500 ~ 1000mJ/㎠의 에너지로 노광시킨다. 노광이 끝난 후, 패턴을 0.38 내지 2.39 wt%의 수산화테트라메틸암모늄 수용액을 이용하여 현상시킨다. 현상은 통상 30 내지 120초 동안 진행하며, 현상 후 탈이온수에 10 내지 30초간 담가 세정시킨다. 이후 230℃에서 약 30 내지 60 분간 후열 처리(postbake)시켜 원하는 패턴을 얻게 된다. 이 과정을 통하여 원하는 부위에 포토마스크의 패턴을 따라 포지티브형 패턴이 형성됨을 알 수 있다. The overall process is spin coating the photosensitive composition onto a silicon wafer substrate and prebake at about 120 ° C. for 2 minutes to form a film. The film is exposed to light using a single mask of the i, g, or h lines using a photomask or an ultraviolet light of mixed light, and the exposure amount depends on the thickness of the coated film, but is typically exposed at an energy of 500 to 1000 mJ / cm 2. Let's do it. After the exposure is completed, the pattern is developed using 0.38 to 2.39 wt% aqueous tetramethylammonium hydroxide solution. The development usually proceeds for 30 to 120 seconds, and after the development, it is immersed in deionized water for 10 to 30 seconds and washed. Thereafter, a postbake is performed at 230 ° C. for about 30 to 60 minutes to obtain a desired pattern. Through this process, it can be seen that a positive pattern is formed along a pattern of a photomask on a desired portion.
이렇게 얻어진 본 발명의 감광층의 두께는 목적에 따라 달라질 수 있으며, 0.7 내지 10 ㎛가 바람직하나, 이에 한정되지 않는다. The thickness of the photosensitive layer of the present invention thus obtained may vary depending on the purpose, but is preferably 0.7 to 10 ㎛, but is not limited thereto.
본 발명의 포지티브형 감광성 폴리이미드 수지 조성물은 반도체 소자의 층간절연막, 패시베이션막, 버퍼코트막, 다층프린트 기판용 절연막, OLED의 절연막 뿐만 아니라, 액정표시소자의 박막 트랜지스터의 보호막, 유기 EL 소자의 전극보호막, 반도체 보호막 등에 사용하기에 바람직하다. The positive photosensitive polyimide resin composition of the present invention is not only an interlayer insulating film, a passivation film, a buffer coat film, an insulating film for multilayer printed circuit boards, an insulating film for OLEDs, but also a protective film for thin film transistors for liquid crystal display devices, and electrodes for organic EL devices. It is preferable to use for a protective film, a semiconductor protective film, etc.
이하, 본 발명을 실시예에 의거하여 더욱 상세하게 설명하면 다음과 같은 바, 본 발명이 이에 한정되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to the following Examples, but the present invention is not limited thereto.
합성예Synthetic example 1 : 폴리이미드계 고분자 화합물의 제조 1: Preparation of polyimide polymer compound
산무수물 성분으로 3,3',4,4'-디페닐에테르테트라카르복실산 이무수물, 8.28g(0.0267몰), 디아민 성분으로 3,5-디아미노벤조익산 2.71g(0.0178몰)과 4,4'-옥시디아닐린 0.89g(0.0045몰)을 NMP 110g 중에 용해시켜 -10℃에서 2시간 동안 반응시켰다.3,3 ', 4,4'-diphenylethertetracarboxylic dianhydride as the acid anhydride component, 8.28 g (0.0267 mol), 2.71 g (0.0178 mol) of 3,5-diaminobenzoic acid as the diamine component and 4 0.89 g (0.0045 mole) of 4'-oxydianiline was dissolved in 110 g of NMP and reacted at −10 ° C. for 2 hours.
상기 반응 용액에 아세트산 무수물 8.18g(0.0801몰)과 피리딘 10.56g(0.1335몰)을 첨가하여 120℃에서 3시간 탈수 폐환 반응시켰다. 그 다음, 증류수에 투입시켜 여과분리 건조시켜 중량평균분자량 15,500, 고유점도 0.12 ㎗/g, 유리전이온도 250 ℃이며, 다음 화학식 2와 같은 구조와 반복단위를 만족하는 폴리이미드계 고분 자 화합물 11g을 얻었다.8.18 g (0.0801 mole) of acetic anhydride and 10.56 g (0.1335 mole) of pyridine were added to the reaction solution, followed by dehydration ring-closure reaction at 120 ° C for 3 hours. Then, the mixture was poured into distilled water, filtered and dried to obtain a weight average molecular weight of 15,500, an intrinsic viscosity of 0.12 dl / g, and a glass transition temperature of 250 ° C. 11 g of a polyimide polymer compound having the same structure and repeating unit as in Chemical Formula 2 was obtained.
합성예Synthetic example 2 : 폴리이미드계 고분자 화합물의 제조 2: Preparation of Polyimide Polymer Compound
산무수물 성분으로 3,3',4,4'-디페닐에테르테트라카르복실산 이무수물 8.28g(0.0267몰), 디아민 성분으로 3,5-디아미노벤조익산 2.03g(0.0134몰)과 4,4'-옥시디아닐린 1.78g(0.0089몰)을 NMP 110g 중에 용해시켜 -10℃에서 2시간 동안 반응시켰다.8.28 g (0.0267 mol) of 3,3 ', 4,4'-diphenylethertetracarboxylic dianhydride as an acid anhydride component, 2.03 g (0.0134 mol) of 3,5-diaminobenzoic acid as a diamine component, 4, 1.78 g (0.0089 mol) of 4'-oxydianiline was dissolved in 110 g of NMP and reacted at -10 ° C for 2 hours.
상기 반응 용액에 아세트산 무수물 8.18g(0.0801몰)과 피리딘 10.56g(0.1335몰)을 첨가하여 120℃에서 3시간 탈수 폐환 반응시켰다. 그 다음, 증류수에 투입시켜 여과분리 건조시켜 중량평균분자량 16,800이고, 고유점도 0.138.18 g (0.0801 mole) of acetic anhydride and 10.56 g (0.1335 mole) of pyridine were added to the reaction solution, followed by dehydration ring-closure reaction at 120 ° C for 3 hours. Then, the mixture was poured into distilled water, filtered and dried to obtain a weight average molecular weight of 16,800, and an intrinsic viscosity of 0.13.
㎗/g, 유리전이온도 254 ℃이며, 다음 화학식 3과 같은 구조와 반복단위를 만족하는 폴리이미드계 고분자 화합물 11.2g을 얻었다. ㎗ / g, glass transition temperature is 254 ℃, 11.2 g of a polyimide polymer compound having the same structure and repeating unit as in Formula 3 was obtained.
합성예Synthetic example 3 : 폴리이미드계 고분자 화합물의 제조 3: Preparation of Polyimide Polymer Compound
산무수물 성분으로 3,3',4,4'-디페닐에테르테트라카르복실산 이무수물 8.28g(0.0267몰), 디아민 성분으로 3,5-비스(4-아미노페녹시)벤조익산 4.51g(0.0134몰)과 4,4'-옥시디아닐린 1.78g(0.0089몰)을 NMP 110g 중에 용해시켜 -10℃에서 2시간 동안 반응시켰다.8.28 g (0.0267 mol) of 3,3 ', 4,4'- diphenyl ether tetracarboxylic dianhydride as an acid anhydride component, 4.51 g of 3,5-bis (4-aminophenoxy) benzoic acid as a diamine component ( 0.0134 mol) and 1.78 g (0.0089 mol) of 4,4'-oxydianiline were dissolved in 110 g of NMP and reacted at -10 ° C for 2 hours.
상기 반응 용액에 아세트산 무수물 8.18g(0.0801몰)과 피리딘 10.56g(0.1335몰)을 첨가하여 120℃에서 3시간 탈수 폐환 반응시켰다. 그 다음, 증류수에 투입시켜, 여과분리 건조시켜 중량평균분자량 23,900이고, 고유점도 0.18 ㎗/g, 유리전이온도 263 ℃이며, 다음 화학식 4와 같은 구조와 반복단위를 만족하는 폴리이미드계 고분자 화합물 14g을 얻었다. 8.18 g (0.0801 mole) of acetic anhydride and 10.56 g (0.1335 mole) of pyridine were added to the reaction solution, followed by dehydration ring-closure reaction at 120 ° C. for 3 hours. Then, the mixture was poured into distilled water, filtered and dried to obtain a weight average molecular weight of 23,900, an intrinsic viscosity of 0.18 dl / g, a glass transition temperature of 263 ° C, Next, 14 g of a polyimide-based polymer compound satisfying the structure and repeating unit of Formula 4 was obtained.
합성예Synthetic example 4 : 폴리이미드계 고분자 화합물의 제조 4: Preparation of Polyimide Polymer Compound
산무수물 성분으로 3,3',4,4'-디페닐에테르테트라카르복실산 이무수물 8.28g(0.0267몰), 디아민 성분으로 4-(4,6-디아미노-2,2-디메틸-1,3,5-트리아진-1(2H)-일)벤조익산, 3.50g(0.0134몰)과 4,4'-옥시디아닐린 1.78g(0.0089몰)을 NMP 110g 중에 용해시켜 -10℃에서 2시간 동안 반응시켰다.8.28 g (0.0267 mol) of 3,3 ', 4,4'- diphenyl ether tetracarboxylic dianhydride as an acid anhydride component, 4- (4,6-diamino-2,2-dimethyl-1 as a diamine component 3.50 g (0.0134 mole) and 1.78 g (4.89 mole) of 4,4'-oxydianiline were dissolved in 110 g of NMP and dissolved at -10 ° C. to 2,3,5-triazine-1 (2H) -yl) benzoic acid. The reaction was carried out for a time.
상기 반응 용액에 아세트산 무수물 8.18g(0.0801몰)과 피리딘 10.56g(0.1335몰)을 첨가하여 120℃에서 3시간 탈수 폐환 반응시켰다. 그 다음, 증류수에 투입시켜 여과분리 건조시켜 중량평균분자량 18,700이고, 고유점도 0.15 ㎗/g, 유리전이온도 259 ℃이며, 다음 화학식 5와 같은 구조와 반복단위를 만족하는 폴리이미드계 고분자 화합물 12.2g을 얻었다. 8.18 g (0.0801 mole) of acetic anhydride and 10.56 g (0.1335 mole) of pyridine were added to the reaction solution, followed by dehydration ring-closure reaction at 120 ° C. for 3 hours. Then, the mixture was poured into distilled water, filtered and dried to obtain a weight average molecular weight of 18,700, an intrinsic viscosity of 0.15 dl / g, and a glass transition temperature of 259 ° C., 12.2 g of a polyimide polymer compound having the same structure and repeating unit as Formula 5 was obtained.
비교합성예Comparative Synthesis Example 1 One
산무수물 성분으로 3,3',4,4'-디페닐에테르테트라카르복실산 이무수물 8.28g(0.0267몰), 디아민 성분으로 3,5-디아미노벤조익산 0.68g(0.0045몰)과 4,4'-옥시디아닐린 3.56g(0.0178몰)을 NMP 110g 중에 용해시켜 -10℃에서 2시간 동안 반응시켰다.8.28 g (0.0267 mol) of 3,3 ', 4,4'-diphenylethertetracarboxylic dianhydride as an acid anhydride component, 0.68 g (0.0045 mol) of 3,5-diaminobenzoic acid as a diamine component, 4, 3.56 g (0.0178 mol) of 4′-oxydianiline was dissolved in 110 g of NMP and reacted at −10 ° C. for 2 hours.
상기 반응 용액에 아세트산 무수물 8.18g(0.0801몰)과 피리딘 10.56g(0.1335몰)을 첨가하여 120℃에서 3시간 탈수 폐환 반응시켰다. 그 다음, 증류수에 투입시켜 여과분리 건조시켜 중량평균분자량 16,700이고, 고유점도 0.14 ㎗/g, 유리전이온도 257 ℃이며, 다음 화학식 6과 같은 구조와 반복단위를 만족하는 폴리이미드계 고분자 화합물 11.7g을 얻었다. 8.18 g (0.0801 mole) of acetic anhydride and 10.56 g (0.1335 mole) of pyridine were added to the reaction solution, followed by dehydration ring-closure reaction at 120 ° C. for 3 hours. Then, the mixture was poured into distilled water, filtered and dried to obtain a weight average molecular weight of 16,700, an intrinsic viscosity of 0.14 dl / g, a glass transition temperature of 257 ° C, 11.7 g of a polyimide-based polymer compound satisfying the structure and repeating unit of Formula 6 was obtained.
비교합성예Comparative Synthesis Example 2 2
산무수물 성분으로 3,3',4,4'-디페닐에테르테트라카르복실산 이무수물 8.28g(0.0267몰), 디아민 성분으로 3,5-비스(4-아미노페녹시)벤조익산 2.99g(0.0089몰)과 4,4'-옥시디아닐린 2.67g(0.0134몰)을 NMP 110g 중에 용해시켜 -10℃에서 2시간 동안 반응시켰다.8.28 g (0.0267 mol) of 3,3 ', 4,4'- diphenyl ether tetracarboxylic dianhydride as an acid anhydride component, 2.99 g (3,5-bis (4-aminophenoxy) benzoic acid as a diamine component 0.0089 mol) and 2.67 g (0.0134 mol) of 4,4'-oxydianiline were dissolved in 110 g of NMP and reacted at -10 ° C for 2 hours.
상기 반응 용액에 아세트산 무수물 8.18g(0.0801몰)과 피리딘 10.56g(0.1335몰)을 첨가하여 120℃에서 3시간 탈수 폐환 반응시켰다. 그 다음, 증류수에 투입시켜 여과분리 건조시켜 중량평균분자량 20,900이고, 고유점도 0.18 ㎗/g, 유리전이온도 254 ℃이며, 다음 화학식 7과 같은 구조와 반복단위를 만족하는 폴리이미드계 고분자 화합물 13g을 얻었다. 8.18 g (0.0801 mole) of acetic anhydride and 10.56 g (0.1335 mole) of pyridine were added to the reaction solution, followed by dehydration ring-closure reaction at 120 ° C. for 3 hours. Then, the mixture was poured into distilled water, filtered and dried to obtain a weight average molecular weight of 20,900, an intrinsic viscosity of 0.18 dl / g, a glass transition temperature of 254 ° C, To obtain a polyimide polymer compound 13g satisfying the structure and repeating unit shown in the following formula (7).
비교합성예Comparative Synthesis Example 3 3
산무수물 성분으로 3,3',4,4'-디페닐에테르테트라카르복실산 이무수물 8.28g(0.0267몰), 디아민 성분으로 4-(4,6-디아미노-2,2-디메틸-1,3,5-트리아진-1(2H)-일)벤조익산 5.46g(0.0209몰)과 4,4'-옥시디아닐린 0.27g(0.0013몰)을 NMP 110g 중에 용해시켜 -10℃에서 2시간 동안 반응시켰다.8.28 g (0.0267 mol) of 3,3 ', 4,4'- diphenyl ether tetracarboxylic dianhydride as an acid anhydride component, 4- (4,6-diamino-2,2-dimethyl-1 as a diamine component 5.46 g (0.0209 mol) of, 3,5-triazine-1 (2H) -yl) benzoic acid and 0.27 g (0.0013 mol) of 4,4'-oxydianiline were dissolved in 110 g of NMP, followed by 2 hours at -10 ° C. Reacted for a while.
상기 반응 용액에 아세트산 무수물 8.18g(0.0801몰)과 피리딘, 10.56g(0.1335몰)을 첨가하여 120℃에서 3시간 탈수 폐환 반응시켰다. 그 다음, 증류수에 투입시켜 여과분리 건조시켜 중량평균분자량 19,200이고, 고유점도 0.17 ㎗/g, 유리전이온도 256 ℃이며, 다음 화학식 8와 같은 구조와 반복단위를 만족하는 폴리이미드계 고분자 화합물 13g을 얻었다. 8.18 g (0.0801 mole) of acetic anhydride, 10.56 g (0.1335 mole) of pyridine were added to the reaction solution, followed by dehydration ring-closure reaction at 120 ° C. for 3 hours. Then, the mixture was poured into distilled water, filtered and dried to obtain a weight average molecular weight of 19,200, an intrinsic viscosity of 0.17 dl / g, and a glass transition temperature of 256 ° C., To obtain a polyimide polymer compound 13g satisfying the structure and repeating unit shown in the following formula (8).
실시예Example 1 One
상기 합성예 1에서 제조된 폴리이미드계 고분자 화합물 8.27g(100중량부)에 대하여, 감광성 산발생제로서 하기 화학식 9로 표시된 다이아조나프토퀴논 에스테르 화합물(이하, TPPA 320) 15중량부, 접착증진제로서 γ-이소시아네이트프로필트리에톡시실란 1중량부, 계면활성제로서 BYK-306 0.5중량부, 및 용매 NMP 450 중량부를 가하여 실온에서 1시간 동안 교반시킨 후, 0.2㎛ 필터로 여과시켜 포지티브형 감광성 폴리이미드 수지 조성물 A를 제조하였다.To 8.27 g (100 parts by weight) of the polyimide polymer compound prepared in Synthesis Example 1, 15 parts by weight of a diazonaptoquinone ester compound (hereinafter, TPPA 320) represented by Formula 9 as a photosensitive acid generator, an adhesion promoter 1 part by weight of γ-isocyanatepropyltriethoxysilane, 0.5 part by weight of BYK-306 as a surfactant, and 450 parts by weight of solvent NMP were added thereto, stirred at room temperature for 1 hour, and filtered through a 0.2 µm filter to form a positive photosensitive polyimide. Resin composition A was prepared.
상기 식 중 OD는 OD/(OD+OH)=2/3의 비율에 따라 OH 또는 OD중에서 선택적으로 주어진다. Wherein OD is optionally given in OH or OD according to the ratio of OD / (OD + OH) = 2/3.
실시예Example 2 내지 4 2 to 4
폴리이미드계 고분자 화합물로서 각각 상기 합성예 2 내지 4에서 얻어진 것을 사용하는 것을 제외하고는, 상기 실시예 1과 동일한 방법으로 포지티브형 감광성 폴리이미드 수지 조성물을 제조하였다.A positive photosensitive polyimide resin composition was prepared in the same manner as in Example 1, except that the polyimide polymer compounds obtained in Synthesis Examples 2 to 4 were used, respectively.
비교예Comparative example 1 내지 3 1 to 3
폴리이미드계 고분자 화합물로서 각각 상기 비교합성예 1 내지 3에서 얻어진 것을 사용하는 것을 제외하고는, 상기 실시예 1과 동일한 방법으로 포지티브형 감광성 폴리이미드 수지 조성물을 제조하였다.A positive type photosensitive polyimide resin composition was prepared in the same manner as in Example 1, except that the polyimide polymer compounds obtained in Comparative Synthesis Examples 1 to 3 were used, respectively.
<알칼리 현상액에 대한 용해도, 최적 Solubility in alkaline developer, optimum 노광에너지Exposure energy , , 잔막율Residual film ratio , 접착성 등의 물성 평가>Evaluation of physical properties such as adhesion
상기 실시예 및 비교예에서 제조된 감광성 수지 조성물 용액들을 각각 4" 웨이퍼에 스핀 코팅(spin coating)하고, 핫 플레이트에서 120℃, 120초 동안 전열 처리(prebake)하여 1.2㎛ 두께의 필름을 형성시켰다. 전열 처리 완료한 웨이퍼를 G-line 스테퍼 Nikon NSR 1505 G4로 20mJ/cm2 부터 5mJ/cm2 간격으로 600mJ/cm2까지 순차적으로 노광시켰으며, 이 때 사용한 마스크에는 1㎛ 부터 10㎛까지 1㎛ 간격으로 라인/스페이스 패턴 및 원형 패턴이 반복되어 있다. 2.38wt% 수산화테트라메틸암모늄 수용액에 23℃에서 60초간 현상한 후 초순수로 60초간 세정 및 건조하여 패턴을 형성하였다. 마스크의 라인/스페이스 패턴 10㎛과 동일한 패턴을 전사시키는 최적 노광 에너지와 현상 후 비노광부에서의 막의 잔막율을 측정하였다. 또한 접착성은 Line & space mask를 이용하여 노광했을 때 현상 후 남아 있는 최소 픽셀 크기를 이용하여 결정하였다. The photosensitive resin composition solutions prepared in Examples and Comparative Examples were spin coated on a 4 "wafer, and prebakeed at 120 ° C. for 120 seconds on a hot plate to form a 1.2 μm thick film. . heat treatment was completed, the wafer the G-line stepper Nikon NSR brought from 20mJ / cm 2 to 1505 G4 to 600mJ / cm 2 to 5mJ / cm 2 exposure interval in order, the mask used at this time is from 1㎛ to 10㎛ 1 The line / space pattern and the circular pattern are repeated at 占 퐉 intervals, and developed in a 2.38wt% tetramethylammonium hydroxide aqueous solution at 23 ° C. for 60 seconds, followed by washing and drying with ultrapure water for 60 seconds to form a pattern. The optimum exposure energy for transferring the same pattern as the pattern of 10 μm and the residual film ratio of the film in the non-exposed part after development were measured, and the adhesion was developed when exposed using a line & space mask. Remaining was determined using the minimum pixel size.
(%)Residual rate
(%)
(㎛)Adhesiveness
(Μm)
상기 표 1의 결과에서처럼, 폴리이미드 고분자 화합물의 제조시 특정의 반복단위 값을 만족하도록 하면 실시예와 같이 알칼리 현상액에 대한 용해도를 적절하게 조절할 수 있어 이를 감광성 수지 조성물에 포함시킬 경우, 365nm 자외선 노광에 대한 감도를 극대화시킬 수 있고, 해상도와 잔막율이 높으며, 기재에 대한 우수한 접착력을 가지므로, 반도체 보호막이나 OLED의 절연막에 적용가능하다.As shown in the results of Table 1, when the polyimide polymer compound is satisfied to satisfy a specific repeating unit value, the solubility in an alkaline developer can be properly adjusted as in the example, and when it is included in the photosensitive resin composition, 365 nm ultraviolet light exposure is performed. It can be applied to the semiconductor protective film or the insulating film of the OLED because it can maximize the sensitivity to, high resolution and high residual film ratio, and excellent adhesion to the substrate.
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