CN114843067B - Flexible inductor and preparation method thereof - Google Patents
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- CN114843067B CN114843067B CN202210402507.4A CN202210402507A CN114843067B CN 114843067 B CN114843067 B CN 114843067B CN 202210402507 A CN202210402507 A CN 202210402507A CN 114843067 B CN114843067 B CN 114843067B
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- 229920000052 poly(p-xylylene) Polymers 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
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- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
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- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
- H01F41/042—Printed circuit coils by thin film techniques
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
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- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
- H01F2017/002—Details of via holes for interconnecting the layers
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- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/006—Printed inductances flexible printed inductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/0073—Printed inductances with a special conductive pattern, e.g. flat spiral
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
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- H01F17/0006—Printed inductances
- H01F2017/0086—Printed inductances on semiconductor substrate
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Abstract
The invention belongs to the field of flexible passive devices, and particularly provides a flexible inductor and a preparation method thereof, which are used for solving the problems that the existing flexible passive inductor has relatively low working frequency band, low stress limit, difficulty in adapting to more complex application environments and the like. The flexible inductor of the present invention includes: the flexible substrate layer, the planar spiral metal layer, the flexible medium layer and the metal lead layer; the Parylene-N thin film with specific thickness is adopted as a flexible substrate and a flexible medium layer respectively, so that the dielectric constant is reduced to improve the cut-off frequency of the device and the mechanical property of the device; the embedded structures of the planar spiral metal layer on the flexible substrate and the metal lead layer on the flexible medium layer are matched, so that the bonding strength between the metal and the Parylene-N is enhanced, and the mechanical performance of the device is further improved; meanwhile, the flexible inductor has good electrical property and mechanical property, and also has stronger temperature stability and biocompatibility by adopting the preparation process of the silicon wafer carrier stripping method, thereby widening the application prospect of devices.
Description
Technical Field
The invention belongs to the field of flexible passive devices, relates to a flexible inductor, and particularly provides a flexible inductor and a preparation method thereof.
Background
The flexible electronic is an emerging electronic technology for manufacturing an organic/inorganic material electronic device on a flexible/ductile substrate, has the characteristics of light weight, thinness, flexibility, foldability, stretchability and the like, and has great engineering application value in the fields of national defense, communication, energy, medical treatment and the like. In recent years, research on a flexible wireless communication system is developed by vast scientific researchers, and a flexible microwave monolithic integrated circuit is widely focused as a submodule of the flexible microwave monolithic integrated circuit; the high-performance flexible microwave monolithic integrated circuit needs high-performance flexible passive devices, and the flexible inductor is taken as one of basic flexible passive devices and plays an important role in matching, filtering and the like.
The flexible inductor is realized by growing a metal film inductor structure on a flexible substrate, and the flexible substrate material is commonly used organic materials, such as: PET, PI, PDMS, but the preparation process is incompatible with the traditional process, and has the problems of thermal deformation, poor photoetching alignment precision and the like; meanwhile, a conventional dielectric layer such as Al 2 O 3 、HfO 2 The dielectric constant is larger and the stress limit is low; therefore, the current flexible passive inductor has the problems of relatively low working frequency band, low stress limit and the like, and is difficult to adapt to more complex application environments; how to prepare a flexible inductor which can stably work at high frequency, has good mechanical properties and has various application scenes becomes an important point of research.
Disclosure of Invention
Aiming at the problems existing in the prior art, the invention aims to provide the flexible inductor and the preparation method thereof, wherein the flexible inductor has the advantages of high cut-off frequency, high mechanical strength, high adaptability to complex environment and the like; the flexible inductor adopts the Parylene-N film as the flexible medium layer, and the cutoff frequency and stress limit of the inductor are effectively improved through the innovative structural design of embedding the planar spiral metal layer and the metal lead layer; meanwhile, the preparation process of the silicon wafer carrier stripping method is matched, so that the prepared flexible inductor not only has good electrical property and mechanical property, but also has stronger temperature stability and biocompatibility, and the application prospect of the device is widened.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
a flexible inductor, comprising: the flexible substrate layer, the plane spiral metal layer, the flexible dielectric layer and the metal lead layer, characterized in that, first graphic recess has been seted up to flexible substrate layer upper surface, the plane spiral metal layer is buried in first graphic recess, flexible dielectric layer covers in plane spiral metal layer upper surface, and flexible dielectric layer upper surface has seted up the second graphic recess, the metal lead layer buries in the second graphic recess, plane spiral metal layer is connected through the metal through-hole that runs through flexible dielectric layer with the metal lead layer.
Further, the flexible dielectric layer is made of parylene-N, and the thickness of the flexible dielectric layer is as follows: 3-5 mu m; it should be noted that: the thickness of the flexible dielectric layer is too thin, so that the planar spiral metal layer and the metal lead layer are short-circuited in the etching process, and the difficulty in preparing the through hole is increased, and the thickness is set to be 3-5 mu m in the invention.
Further, the flexible substrate material is Parylene-N, and the thickness of the flexible substrate material is 20-50 mu m; it should be noted that: the Parylene-N is chemically composed of Parylene, is compact and nonporous, has better biocompatibility, can prevent corrosion of liquid, moisture, salt fog, chemical substances and common gases, and has extremely low dielectric constant and good insulating property; while the Parylene-N is used as a substrate, the substrate is too thin to form effective mechanical strength and is easy to break, and the bending capability is reduced due to the too thick substrate, so that the substrate is set to be 20-50 mu m in the invention.
Further, the constituent materials of the planar spiral metal layer are metal Ti/Cu/Au from bottom to top, and the thicknesses are 20-50 nm/0.4-2 mu m/20-50 nm in sequence; it should be noted that: the metal Ti is used as an adhesion layer, the metal Cu is used as a main conductive layer, the thickness needs to be matched with the actual current bearing capacity, and the metal Au is used for preventing Cu oxidation exposed in air.
Further, the metal lead layer is formed by sequentially adopting metal Ti/Cu/Au from bottom to top, and the thickness is 20-50 nm/0.4-2 mu m/20-50 nm.
Further, the depth of the first patterned groove is as follows: the depth of the second graphical groove is 0.2-2 mu m, and the depth of the second graphical groove is as follows: 0.2-2 mu m.
Further, the depth of the through hole is consistent with the thickness of the dielectric layer, and the metal material and the thickness are consistent with the thickness of the metal lead layer.
The preparation method of the flexible inductor is characterized by comprising the following steps of:
step 3, sputtering a metal Ti adhesive layer on the first patterned groove by adopting a magnetron sputtering process, and sequentially growing a metal Cu layer and a metal Au layer on the metal Ti adhesive layer by adopting an electron beam evaporation process to form a planar spiral metal layer;
step 5, spin coating photoresist on the flexible dielectric layer, and then sequentially performing pre-baking and photoetching development to finish pattern definition of the through holes; forming a through hole penetrating through the flexible dielectric layer by adopting an RIE dry etching process based on the pattern definition of the through hole;
step 7, adopting the same magnetron sputtering process as the step 3 to realize through hole metallization and metal lead layer preparation;
and 8, dicing and opening the flexible substrate layer on the surface of the carrier to form a solution inlet window, and soaking in acetone to realize automatic falling and stripping, so as to finally obtain the flexible inductor.
Further, the temperature in the magnetron sputtering process is less than or equal to 100 ℃, and the temperature in the electron beam evaporation process is less than or equal to 80 ℃.
Further, the RIE dry etching process comprises the following specific processes: the etching gas is oxygen, the flow rate of the gas is 50+/-10 sccm, the power is 100-300W, and the air pressure is 40+/-10 mtorr.
The invention has the beneficial effects that:
the invention provides a flexible inductor and a preparation method thereof, wherein a Parylene-N film with specific thickness is adopted in the flexible inductor as a flexible substrate and a flexible medium layer respectively, so that the dielectric constant is reduced to improve the cut-off frequency of the flexible inductor, and meanwhile, the mechanical property of the flexible inductor is improved; the embedded structure of the planar spiral metal layer on the flexible substrate and the embedded structure of the metal lead layer on the flexible medium layer are matched, so that the bonding strength between the metal and the Parylene-N is enhanced, and the mechanical property of the flexible inductor is further improved; meanwhile, the flexible inductor adopts a silicon wafer as a carrier in the preparation process, reduces errors caused by deformation in the preparation process, uses the RIE dry etching technology to treat the material surface, enhances the metal adhesion and realizes a metal embedding structure; finally, the flexible inductor provided by the invention has good electrical property and mechanical property, and also has stronger environmental stability and biocompatibility, so that the application prospect of the device is widened.
Drawings
Fig. 1 is a schematic structural diagram of a flexible inductor in embodiment 1.
Fig. 2 is a flow chart of a process for manufacturing the flexible inductor in embodiment 1.
Fig. 3 is a schematic structural diagram of a flexible inductor in comparative example 1 using PI as a dielectric layer.
FIG. 4 is a graph of comparative example 2 using AL 2 O 3 Is a schematic diagram of the flexible inductance structure of the dielectric layer.
Fig. 5 is a graph showing comparison of the cut-off frequency simulation results of example 1 and comparative examples 1 and 2 under the same inductance.
Detailed Description
In order to make the objects, technical solutions and advantageous effects of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and examples.
Example 1
The present embodiment provides a flexible inductor, whose structure is shown in fig. 1, and specifically includes: the flexible substrate layer, plane spiral metal layer, flexible dielectric layer and metal lead wire layer, wherein, first graphic recess has been seted up to flexible substrate layer upper surface, the plane spiral metal layer is buried in first graphic recess, flexible dielectric layer covers in plane spiral metal layer upper surface, and flexible dielectric layer upper surface has seted up the second graphic recess, the metal lead wire layer buries in the second graphic recess, plane spiral metal layer is connected through the metal through-hole that runs through flexible dielectric layer with the metal lead wire layer.
In this embodiment, the flexible dielectric layer is made of parylene-N, and the thickness of the parylene-N is 3 μm; the flexible substrate material is Parylene-N, and the thickness of the flexible substrate material is 30 mu m; the constituent materials of the planar spiral metal layer are metal Ti/Cu/Au and the thickness of the planar spiral metal layer is 20nm/1.9 mu m/20nm from bottom to top, and the metal materials and the thickness of the metal lead layer are the same as those of the planar spiral metal layer; the depth of the through hole is consistent with that of the dielectric layer, and the metal material and the thickness are consistent with those of the metal lead layer; the depth of the first patterned groove is 200nm, and the depth of the second patterned groove is 1500nm.
The flexible inductor is prepared by the following steps:
step 3, sputtering a metal Ti adhesion layer on the first patterned groove in the step 2 by adopting a magnetron sputtering process, wherein the thickness of the metal Ti adhesion layer is 20nm, and the temperature in the sputtering process is less than or equal to 100 ℃; sequentially growing a metal Cu layer and a metal Au layer on the metal Ti adhesive layer by adopting an electron beam evaporation process, wherein the thicknesses of the metal Cu layer and the metal Au layer are respectively 1.9 mu m and 20nm, and the temperature in the growth process is less than or equal to 80 ℃; forming a planar spiral inductor structure after the growth is finished, as shown in fig. 2 (e);
step 5, spin coating photoresist with the thickness of 4 mu m on the flexible dielectric layer, and then sequentially performing pre-baking and photoetching development to finish definition of a through hole pattern area, as shown in fig. 2 (g); etching through the dielectric layer by adopting an RIE oxygen plasma etching process with the same gas parameters as those of the step 3 to obtain a through hole structure, as shown in fig. 2 (h);
step 7, adopting the same magnetron sputtering process as the step 3 to realize through hole metallization and metal lead layer preparation, as shown in fig. 2 (k);
and 8, dicing and opening a Parylene-N layer on the front surface of the carrier to form a solution inlet window, and soaking in acetone for 2 hours to realize automatic falling and stripping of the inductor, so that the final flexible inductor is obtained, as shown in fig. 2 (l).
Comparative example 1
This comparative example provides a flexible inductor whose structural diagram is shown in fig. 3, and the only difference from embodiment 1 is that: the flexible dielectric layer adopts a PI dielectric layer, and the rest of the flexible dielectric layer is kept consistent.
Comparative example 2
This comparative example provides a flexible inductor whose structural diagram is shown in fig. 4, and the only difference from embodiment 1 is that: the flexible medium layer adopts AL 2 O 3 The rest of the dielectric layers are kept consistent.
Simulation tests are carried out on the embodiment 1 and the comparative examples 1 and 2 of the invention, and the results are shown in fig. 5; it can be seen that the cut-off frequency of example 1 is greatly increased compared to comparative example 1, although both are flexible materials; the frequency of the comparative example was higher in example 1 than in comparative example 2, and the mechanical properties of comparative example 2 were far behind those of comparative example 1. It can be seen that example 1 gives a compromise between good mechanical and electrical properties compared to the conventional solution.
While the invention has been described in terms of specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the equivalent or similar purpose, unless expressly stated otherwise; all of the features disclosed, or all of the steps in a method or process, except for mutually exclusive features and/or steps, may be combined in any manner.
Claims (7)
1. A method for manufacturing a flexible inductor, the flexible inductor comprising: the flexible substrate comprises a flexible substrate layer, a planar spiral metal layer, a flexible medium layer and a metal lead layer, wherein a first graphical groove is formed in the upper surface of the flexible substrate layer, the planar spiral metal layer is embedded in the first graphical groove, the flexible medium layer covers the upper surface of the planar spiral metal layer, a second graphical groove is formed in the upper surface of the flexible medium layer, the metal lead layer is embedded in the second graphical groove, and the planar spiral metal layer is connected with the metal lead layer through a metal through hole penetrating through the flexible medium layer; the flexible dielectric layer is made of parylene-N, and the thickness of the flexible dielectric layer is as follows: 3-5 mu m; the flexible substrate layer is made of Parylene-N, and the thickness of the flexible substrate layer is as follows: 20-50 mu m;
the preparation method of the flexible inductor comprises the following steps:
step 1, a pre-cleaned silicon wafer is used as a carrier, and a flexible substrate layer is grown on the carrier by a chemical vapor deposition method;
step 2, spin coating photoresist on the flexible substrate layer, and then sequentially performing pre-baking and photoetching development to finish pattern definition of the planar spiral metal layer; forming a first graphical groove on the upper surface of the flexible substrate layer by adopting an RIE dry etching process based on the graphic definition of the planar spiral metal layer;
step 3, sputtering a metal Ti adhesive layer on the first patterned groove by adopting a magnetron sputtering process, and sequentially growing a metal Cu layer and a metal Au layer on the metal Ti adhesive layer by adopting an electron beam evaporation process to form a planar spiral metal layer;
step 4, preparing a flexible medium layer on the planar spiral metal layer by adopting a chemical vapor deposition method;
step 5, spin coating photoresist on the flexible dielectric layer, and then sequentially performing pre-baking and photoetching development to finish pattern definition of the through holes; forming a through hole penetrating through the flexible dielectric layer by adopting an RIE dry etching process based on the pattern definition of the through hole;
step 6, spin coating photoresist on the flexible dielectric layer, and then sequentially performing pre-baking, photoetching and developing to finish pattern definition of the metal lead layer; forming a second graphical groove on the upper surface of the flexible dielectric layer by adopting an RIE dry etching process based on the graphic definition of the metal lead layer;
step 7, adopting the same magnetron sputtering process as the step 3 to realize through hole metallization and metal lead layer preparation;
and 8, dicing and opening the flexible substrate layer on the surface of the carrier to form a solution inlet window, and soaking in acetone to realize automatic falling and stripping, so as to finally obtain the flexible inductor.
2. The method for manufacturing a flexible inductor according to claim 1, wherein the constituent materials of the planar spiral metal layer are metal Ti/Cu/Au in sequence from bottom to top, and the thickness is 20-50 nm/0.4-2 μm/20-50 nm in sequence.
3. The method for manufacturing a flexible inductor according to claim 1, wherein the metal lead layer is composed of metal Ti/Cu/Au in sequence from bottom to top, and has a thickness of 20-50 nm/0.4-2 μm/20-50 nm.
4. The method of manufacturing a flexible inductor as claimed in claim 1, wherein the depth of the first patterned recess is: the depth of the second graphical groove is 0.2-2 mu m, and the depth of the second graphical groove is as follows: 0.2-2 mu m.
5. The method of manufacturing a flexible inductor as claimed in claim 1, wherein the depth of said via is consistent with the thickness of the dielectric layer and the metal material and thickness are consistent with the thickness of the metal lead layer.
6. The method for manufacturing a flexible inductor according to claim 1, wherein the temperature in the magnetron sputtering process is less than or equal to 100 ℃ and the temperature in the electron beam evaporation process is less than or equal to 80 ℃.
7. The method for manufacturing the flexible inductor according to claim 1, wherein the specific process of RIE etching is: the etching gas is oxygen, the flow rate of the gas is 50+/-10 sccm, the power is 100-300W, and the air pressure is 40+/-10 mtorr.
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| CN103000362A (en) * | 2012-12-07 | 2013-03-27 | 北京大学 | Preparation method of flexible substrate-based folding spiral inductor provided with magnetic core |
| CN104993799A (en) * | 2015-07-20 | 2015-10-21 | 天津大学 | Flexible radio frequency strain adjustable passive high-pass filter and manufacturing method thereof |
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| US20100203713A1 (en) * | 2007-09-11 | 2010-08-12 | Tadahiro Ohmi | Method of manufacturing electronic device |
| CN103043599B (en) * | 2012-12-07 | 2015-10-28 | 北京大学 | A kind of preparation method of the spiral inductance based on flexible polymer substrate |
| CN106129047B (en) * | 2016-06-29 | 2018-11-06 | 北京时代民芯科技有限公司 | A kind of new producing method of planar spiral inductor |
| US9872390B1 (en) * | 2016-08-17 | 2018-01-16 | Microsoft Technology Licensing, Llc | Flexible interconnect |
| CN112694061A (en) * | 2020-12-11 | 2021-04-23 | 北京自动化控制设备研究所 | Processing method of non-magnetic electric heater based on MEMS technology |
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| CN103000362A (en) * | 2012-12-07 | 2013-03-27 | 北京大学 | Preparation method of flexible substrate-based folding spiral inductor provided with magnetic core |
| CN104993799A (en) * | 2015-07-20 | 2015-10-21 | 天津大学 | Flexible radio frequency strain adjustable passive high-pass filter and manufacturing method thereof |
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