CN218580051U

CN218580051U - Aluminum nitride and gallium nitride composite substrate

Info

Publication number: CN218580051U
Application number: CN202222170608.1U
Authority: CN
Inventors: 侯想; 刘熠新; 钟梦洁; 王瑞敏; 熊彩浩; 蔡琦; 林赛
Original assignee: Fujian Zoomking Technology Co ltd
Current assignee: Fujian Zoomking Technology Co ltd
Priority date: 2022-08-18
Filing date: 2022-08-18
Publication date: 2023-03-07
Anticipated expiration: 2032-08-18

Abstract

The utility model relates to a composite substrate technical field especially relates to an aluminium nitride and gallium nitride composite substrate. The technical scheme is that the method mainly aims at the problems that the existing gallium nitride substrate is high in cost and the bottom appearance cannot be adjusted: based on the metal organic chemical vapor deposition technology, the composite substrate comprises a gallium nitride layer and an aluminum nitride layer, the gallium nitride layer is located above the aluminum nitride layer, and the aluminum nitride layer and the gallium nitride layer are of special-shaped structures. The utility model discloses having the advantage that the preparation cost is low when possessing same usability, making the feasibility high, simultaneously through adjustment CPSS's appearance, the appearance of adjustable composite substrate bottom makes the semiconductor device who finally makes have different performances, has extensive application prospect, mainly is applied to the semiconductor production field.

Description

Aluminum nitride and gallium nitride composite substrate

Technical Field

The utility model relates to a composite substrate technical field especially relates to an aluminium nitride and gallium nitride composite substrate.

Background

Gallium nitride (GaN), a typical representative of the third generation wide bandgap semiconductor, has excellent physical and chemical properties, and its bandgap width, electron saturation mobility, breakdown voltage and operating temperature are much higher than those of Si (silicon) and GaAs (gallium arsenide), so that it is very suitable for developing high-frequency, high-voltage and high-power devices and circuits. Gallium nitride substrates are produced on a very small scale, currently available from only a few companies, and are very expensive. When the epitaxial structure is manufactured, the quality of the semiconductor device obtained by directly growing the epitaxial structure on the gallium nitride substrate is better, but the cost of the semiconductor device is high due to the higher cost of the gallium nitride substrate, and the semiconductor device is difficult to put into mass production at present. In addition, the bottom of the conventional gallium nitride substrate is a plane, so that the performance of the device cannot be adjusted by changing the appearance of the bottom. In view of the above, we propose a composite substrate of aluminum nitride and gallium nitride.

SUMMERY OF THE UTILITY MODEL

The utility model aims at providing an aluminium nitride and gallium nitride composite substrate to the problem that the current gallium nitride substrate that exists is with high costs among the background art, the unable adjustment of bottom appearance.

The technical scheme of the utility model: the utility model provides an aluminium nitride and gallium nitride composite substrate, is based on metal organic chemical vapor deposition technique, composite substrate includes gallium nitride layer and aluminium nitride layer, the gallium nitride layer is located the top of aluminium nitride layer, just aluminium nitride layer and gallium nitride layer are special-shaped structure.

Preferably, the gallium nitride layer comprises a conical groove, the aluminum nitride layer comprises an aluminum nitride conical veneer, and the conical groove and the aluminum nitride conical veneer are uniformly distributed at the bottom of the composite substrate in an array manner.

Preferably, the aluminum nitride conical facing surface is of a conical structure, and the aluminum nitride conical facing surface is tightly attached to one side of the bottom of the conical groove.

Preferably, the gallium nitride layer comprises a rectangular groove, the aluminum nitride layer comprises an aluminum nitride rectangular veneer, and the rectangular groove and the aluminum nitride rectangular veneer have rectangular cross sections.

Preferably, the aluminum nitride rectangular attaching surface is tightly attached to the bottom of the rectangular groove.

Preferably, the size of the composite substrate is 0.45-9.9 μm in base width and 0.3-10 μm in height.

Preferably, the size of the composite substrate is 9.9 μm in bottom width and 3 μm in height.

Compared with the prior art, the utility model discloses following profitable technological effect has:

1. the composite substrate of the utility model is a composite structure of aluminum nitride and gallium nitride, and the structure has the characteristics basically the same as the substrate performance stripped by the laser at present, and simultaneously has the advantages of low preparation cost, high manufacturing feasibility and good application prospect;

2. the utility model can adjust the appearance of the bottom of the whole composite substrate to obtain different optical characteristics by adjusting the graphic substrate, and the finally made semiconductor device has different performances, has wider application range and can be applied to various fields such as sensors, laser generators, optical devices and the like;

3. to sum up, the utility model discloses have the advantage that the preparation cost is low when possessing equal usability, it is high to make the feasibility, simultaneously through adjustment CPSS's appearance, the appearance of adjustable composite substrate bottom makes the semiconductor device who finally makes have different performance, has extensive application prospect.

Drawings

FIG. 1 is a front view of an embodiment;

FIG. 2 is a partial cross-sectional view of the structure of FIG. 1;

FIG. 3 is a schematic cross-sectional side view of the structure of FIG. 1;

FIG. 4 is a front view of another embodiment;

fig. 5 is a cross-sectional side view of the structure of fig. 4.

Reference numerals: 1. a gallium nitride layer; 11. a conical groove; 101. a rectangular groove; 2. an aluminum nitride layer; 21. conical aluminum nitride veneers; 201. and aluminum nitride rectangular veneering.

Detailed Description

The following describes the technical solution of the present invention with reference to the accompanying drawings and specific embodiments.

Example one

As shown in FIGS. 1-3, the present invention provides an aluminum nitride and gallium nitride composite substrate, based on the metal organic chemical vapor deposition technology, the composite substrate comprises a gallium nitride layer 1 and an aluminum nitride layer 2, the size of the composite substrate is 0.45-9.9 μm wide at the bottom and 0.3-10 μm high at the bottom. The gallium nitride layer 1 is positioned above the aluminum nitride layer 2, and the aluminum nitride layer 2 and the gallium nitride layer 1 are of special-shaped structures; the gallium nitride layer 1 comprises a conical groove 11, the aluminum nitride layer 2 comprises an aluminum nitride conical veneering surface 21, and the conical groove 11 and the aluminum nitride conical veneering surface 21 are uniformly distributed at the bottom of the composite substrate in an array manner; the aluminum nitride conical facing 21 is in a conical structure, and the aluminum nitride conical facing 21 is tightly attached to one side of the bottom of the conical groove 11.

In this embodiment, the CPSS pattern of the composite substrate is conical.

Example two

As shown in fig. 4 and fig. 5, the present invention provides an aluminum nitride and gallium nitride composite substrate, compared to the first embodiment, the present embodiment is based on the metal organic chemical vapor deposition technology, the composite substrate includes a gallium nitride layer 1 and an aluminum nitride layer 2, the size of the composite substrate is 0.45-9.9 μm wide at the bottom and 0.3-10 μm high at the bottom. The gallium nitride layer 1 is positioned above the aluminum nitride layer 2, and the aluminum nitride layer 2 and the gallium nitride layer 1 are of special-shaped structures; the gallium nitride layer 1 comprises a rectangular groove 101, the aluminum nitride layer 2 comprises an aluminum nitride rectangular veneer 201, and the cross sections of the rectangular groove 101 and the aluminum nitride rectangular veneer 201 are of rectangular structures; the rectangular aluminum nitride facing 201 is closely attached to the bottom of the rectangular groove 101.

In this embodiment, the CPSS pattern of the composite substrate has a strip shape.

In the scheme, the CPSS pattern of the shaped composite substrate can be in a conical shape, a columnar shape, a strip shape and the like.

On the basis of the first embodiment and the second embodiment, the present embodiment provides a method for manufacturing a composite substrate, which specifically includes the following steps: s1, manufacturing a CPSS (silicon dioxide-aluminum oxide composite substrate) by using a conventional process, wherein the upper part of the CPSS is silicon dioxide, the lower part of the CPSS is sapphire, the pattern size is that the bottom width is 0.45-9.9um, the height is 0.3-10um, and the pattern appearance of the CPSS can be conical, pyramid-shaped, columnar, strip-shaped and the like;

s2, a layer of photoresist is spin-coated on the CPSS, the thickness of the photoresist is 0.5-2.0 mu m, and the photoresist covers the patterns on the CPSS completely; other organics may also be spin coated for this process.

S3, performing dry etching on the CPSS coated with the photoresist by using oxygen until the photoresist is 0.3-1.5 mu m thick, and the upper half part of the side wall of the graph has no photoresist residue; or using a photoetching machine to expose the photoresist, controlling the exposure energy to ensure that the upper part of the photoresist is exposed and the lower part of the photoresist is not exposed, developing by using a developing solution to remove the photoresist on the upper half part of the side wall of the graph, wherein the height of the remained photoresist is higher than that of the sapphire in order to successfully complete stripping;

s4, growing an aluminum nitride film on the CPSS coated with the photoresist by using magnetron sputtering equipment, so that the film covers the whole CPSS pattern and the photoresist;

s5, putting the substrate slice covered with the aluminum nitride film and the photoresist into NMP or acetone for soaking for 1-100min, and dissolving the photoresist below the aluminum nitride, wherein the QDR is 600-1800S;

s6, finally, remaining the CPSS with the aluminum nitride film;

s7, growing a gallium nitride epitaxial layer on the CPSS with the aluminum nitride film by using MOCVD, wherein the process is consistent with the conventional process;

s8, soaking the CPSS with the gallium nitride grown in BOE (buffered oxide etching solution) for 1-100min to dissolve the silicon dioxide on the upper part of the CPSS, wherein the QDR is 600-1800S; and (4) stripping the aluminum nitride and gallium nitride epitaxial layers due to the dissolved silicon dioxide, so as to obtain the aluminum nitride and gallium nitride composite substrate.

The above embodiments are merely some preferred embodiments of the present invention, and many alternative modifications and combinations can be made to the above embodiments by those skilled in the art based on the technical solution of the present invention and the related teachings of the above embodiments.

Claims

1. An aluminum nitride and gallium nitride composite substrate, characterized in that: based on the metal organic chemical vapor deposition technology, the composite substrate comprises a gallium nitride layer (1) and an aluminum nitride layer (2), wherein the gallium nitride layer (1) is positioned above the aluminum nitride layer (2), and the aluminum nitride layer (2) and the gallium nitride layer (1) are of special-shaped structures.

2. An aluminum nitride and gallium nitride composite substrate according to claim 1, wherein the gallium nitride layer (1) comprises a conical groove (11), the aluminum nitride layer (2) comprises an aluminum nitride conical veneer (21), and the conical groove (11) and the aluminum nitride conical veneer (21) are uniformly distributed in an array at the bottom of the composite substrate.

3. The aluminum nitride and gallium nitride composite substrate according to claim 2, wherein the conical aluminum nitride facing surface (21) is a conical structure, and the conical aluminum nitride facing surface (21) is tightly attached to one side of the bottom of the conical groove (11).

4. An aluminum nitride and gallium nitride composite substrate according to claim 1, wherein the gallium nitride layer (1) comprises a rectangular groove (101), the aluminum nitride layer (2) comprises an aluminum nitride rectangular facing (201), and the cross section of the rectangular groove (101) and the aluminum nitride rectangular facing (201) is a rectangular structure.

5. The aluminum nitride and gallium nitride composite substrate according to claim 4, wherein the rectangular facing aluminum nitride surface (201) is closely attached to the bottom of the rectangular groove (101).

6. The aluminum nitride-gallium nitride composite substrate according to any one of claims 1 to 5, wherein the dimensions of the composite substrate are 0.45 to 9.9 μm in bottom width and 0.3 to 10 μm in height.

7. The aluminum nitride-gallium nitride composite substrate according to claim 6, wherein the composite substrate has dimensions of 9.9 μm bottom width and 3 μm height.