CN114829670B - 氧化硅涂覆的聚合物膜以及用于生产其的低压pecvd方法 - Google Patents

氧化硅涂覆的聚合物膜以及用于生产其的低压pecvd方法 Download PDF

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Publication number
CN114829670B
CN114829670B CN202080088728.8A CN202080088728A CN114829670B CN 114829670 B CN114829670 B CN 114829670B CN 202080088728 A CN202080088728 A CN 202080088728A CN 114829670 B CN114829670 B CN 114829670B
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China
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silicon oxide
plasma source
plasma
polymer substrate
producing
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Chinese (zh)
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CN114829670A (zh
Inventor
G·阿恩尔特
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AGC Glass Europe SA
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AGC Glass Europe SA
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/48—Generating plasma using an arc
    • H05H1/481—Hollow cathodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/40—Surface treatments
    • H05H2245/42—Coating or etching of large items

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
CN202080088728.8A 2019-12-19 2020-12-18 氧化硅涂覆的聚合物膜以及用于生产其的低压pecvd方法 Active CN114829670B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19217863 2019-12-19
EP19217863.0 2019-12-19
PCT/EP2020/087042 WO2021123183A1 (en) 2019-12-19 2020-12-18 Silicon oxide coated polymer films and low pressure pecvd methods for producing the same

Publications (2)

Publication Number Publication Date
CN114829670A CN114829670A (zh) 2022-07-29
CN114829670B true CN114829670B (zh) 2024-07-02

Family

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Application Number Title Priority Date Filing Date
CN202080088728.8A Active CN114829670B (zh) 2019-12-19 2020-12-18 氧化硅涂覆的聚合物膜以及用于生产其的低压pecvd方法

Country Status (5)

Country Link
US (1) US20230054056A1 (https=)
EP (1) EP4077762A1 (https=)
JP (1) JP7730328B2 (https=)
CN (1) CN114829670B (https=)
WO (1) WO2021123183A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4565727A1 (en) * 2022-08-04 2025-06-11 AGC Glass Europe Decoratively coated polymer substrates and process for obtaining the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
FR2701492B1 (fr) * 1993-02-10 1996-05-10 Univ Lille Sciences Tech Procédé pour déposer une couche mince sur un substrat par plasma froid différé d'azote.
US5888593A (en) * 1994-03-03 1999-03-30 Monsanto Company Ion beam process for deposition of highly wear-resistant optical coatings
US6444945B1 (en) * 2001-03-28 2002-09-03 Cp Films, Inc. Bipolar plasma source, plasma sheet source, and effusion cell utilizing a bipolar plasma source
DE60238979D1 (de) * 2001-04-20 2011-03-03 Gen Plasma Inc Penningentladungsplasmaquelle
US7411352B2 (en) * 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
WO2008045226A1 (en) * 2006-10-06 2008-04-17 Dow Global Technologies Inc. Plasma-enhanced chemical vapor deposition coating process
WO2009036308A1 (en) * 2007-09-12 2009-03-19 Sub-One Technology Hybrid photovoltaically active layer and method for forming such a layer
EP2316252B1 (en) * 2008-08-04 2018-10-31 AGC Flat Glass North America, Inc. Plasma source and method for depositing thin film coatings using plasma enhanced chemical vapor deposition and method thereof
BE1019991A3 (fr) 2011-05-25 2013-03-05 Agc Glass Europe Procede de depot de couches sur un substrat verrier par pecvd a faible pression.
US9431218B2 (en) * 2013-03-15 2016-08-30 Tokyo Electron Limited Scalable and uniformity controllable diffusion plasma source
JP2017105643A (ja) * 2014-04-24 2017-06-15 旭硝子株式会社 被膜付きガラス基板および被膜付きガラス基板の製造方法
BR112017011770A2 (pt) 2014-12-05 2017-12-26 Agc Flat Glass Na Inc fonte de plasma que utiliza um revestimento de redução de macro partícula e método de usar a fonte de plasma que utiliza um revestimento de redução de macro partícula para a deposição de revestimentos de filme fino e modificação de superfícies
EA201791234A1 (ru) * 2014-12-05 2017-11-30 Эй-Джи-Си Гласс Юроуп, С.А. Плазменный источник с полым катодом
US10246772B2 (en) * 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
US9721765B2 (en) * 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
EP3899086A1 (en) * 2018-12-21 2021-10-27 AGC Glass Europe Method for coating metal
US20240279811A1 (en) * 2021-02-12 2024-08-22 Agc Glass Europe Method of producing a water repellent coating onto textile substrates using a plasma generated by hollow cathodes

Also Published As

Publication number Publication date
CN114829670A (zh) 2022-07-29
WO2021123183A1 (en) 2021-06-24
US20230054056A1 (en) 2023-02-23
JP7730328B2 (ja) 2025-08-27
JP2023507602A (ja) 2023-02-24
EP4077762A1 (en) 2022-10-26

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