CN114829670B - 氧化硅涂覆的聚合物膜以及用于生产其的低压pecvd方法 - Google Patents

氧化硅涂覆的聚合物膜以及用于生产其的低压pecvd方法 Download PDF

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Publication number
CN114829670B
CN114829670B CN202080088728.8A CN202080088728A CN114829670B CN 114829670 B CN114829670 B CN 114829670B CN 202080088728 A CN202080088728 A CN 202080088728A CN 114829670 B CN114829670 B CN 114829670B
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China
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silicon oxide
plasma source
plasma
polymer substrate
producing
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CN202080088728.8A
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Chinese (zh)
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CN114829670A (zh
Inventor
G·阿恩尔特
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AGC Glass Europe SA
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AGC Glass Europe SA
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/48—Generating plasma using an arc
    • H05H1/481—Hollow cathodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/40—Surface treatments
    • H05H2245/42—Coating or etching of large items

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
CN202080088728.8A 2019-12-19 2020-12-18 氧化硅涂覆的聚合物膜以及用于生产其的低压pecvd方法 Active CN114829670B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19217863 2019-12-19
EP19217863.0 2019-12-19
PCT/EP2020/087042 WO2021123183A1 (en) 2019-12-19 2020-12-18 Silicon oxide coated polymer films and low pressure pecvd methods for producing the same

Publications (2)

Publication Number Publication Date
CN114829670A CN114829670A (zh) 2022-07-29
CN114829670B true CN114829670B (zh) 2024-07-02

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CN202080088728.8A Active CN114829670B (zh) 2019-12-19 2020-12-18 氧化硅涂覆的聚合物膜以及用于生产其的低压pecvd方法

Country Status (5)

Country Link
US (1) US12662735B2 (enExample)
EP (1) EP4077762A1 (enExample)
JP (1) JP7730328B2 (enExample)
CN (1) CN114829670B (enExample)
WO (1) WO2021123183A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119630832A (zh) * 2022-08-04 2025-03-14 旭硝子欧洲玻璃公司 装饰性涂覆的聚合物基材及其获得方法

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
FR2701492B1 (fr) * 1993-02-10 1996-05-10 Univ Lille Sciences Tech Procédé pour déposer une couche mince sur un substrat par plasma froid différé d'azote.
US5888593A (en) * 1994-03-03 1999-03-30 Monsanto Company Ion beam process for deposition of highly wear-resistant optical coatings
US6444945B1 (en) * 2001-03-28 2002-09-03 Cp Films, Inc. Bipolar plasma source, plasma sheet source, and effusion cell utilizing a bipolar plasma source
WO2002086932A1 (en) * 2001-04-20 2002-10-31 Applied Process Technologies Magnetic mirror plasma source
DE10153760A1 (de) * 2001-10-31 2003-05-22 Fraunhofer Ges Forschung Verfahren zur Herstellung einer UV-absorbierenden transparenten Abriebschutzschicht
US7411352B2 (en) * 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
WO2008045226A1 (en) * 2006-10-06 2008-04-17 Dow Global Technologies Inc. Plasma-enhanced chemical vapor deposition coating process
WO2009036308A1 (en) * 2007-09-12 2009-03-19 Sub-One Technology Hybrid photovoltaically active layer and method for forming such a layer
KR101602517B1 (ko) * 2008-08-04 2016-03-10 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 Ｐｅｃｖｄ를 이용한 박막 코팅을 증착하기 위한 플라즈마 소스 및 방법
US20100024729A1 (en) * 2008-08-04 2010-02-04 Xinmin Cao Methods and apparatuses for uniform plasma generation and uniform thin film deposition
BE1019991A3 (fr) * 2011-05-25 2013-03-05 Agc Glass Europe Procede de depot de couches sur un substrat verrier par pecvd a faible pression.
US9431218B2 (en) * 2013-03-15 2016-08-30 Tokyo Electron Limited Scalable and uniformity controllable diffusion plasma source
JP2017105643A (ja) * 2014-04-24 2017-06-15 旭硝子株式会社 被膜付きガラス基板および被膜付きガラス基板の製造方法
MX2017007356A (es) * 2014-12-05 2018-04-11 Agc Flat Glass Europe S A Fuente de plasma del catodo hueco.
ES2900321T3 (es) * 2014-12-05 2022-03-16 Agc Flat Glass Na Inc Fuente de plasma que utiliza un recubrimiento de reducción de macropartículas y procedimiento para usar una fuente de plasma que utiliza un recubrimiento de reducción de macropartículas para la deposición de recubrimientos de película delgada y modificación de superficies
US10246772B2 (en) * 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
US9721765B2 (en) * 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
CN113366141A (zh) * 2018-12-21 2021-09-07 旭硝子欧洲玻璃公司 用于金属涂层的方法
CN116806279B (zh) * 2021-02-12 2026-05-05 旭硝子欧洲玻璃公司 使用由空心阴极产生的等离子体在纺织品基材上产生防水涂层的方法

Also Published As

Publication number Publication date
US12662735B2 (en) 2026-06-23
US20230054056A1 (en) 2023-02-23
EP4077762A1 (en) 2022-10-26
CN114829670A (zh) 2022-07-29
JP7730328B2 (ja) 2025-08-27
JP2023507602A (ja) 2023-02-24
WO2021123183A1 (en) 2021-06-24

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