CN114800253B - Grinding device and method for silicon carbide wafer - Google Patents
Grinding device and method for silicon carbide wafer Download PDFInfo
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- CN114800253B CN114800253B CN202210627321.9A CN202210627321A CN114800253B CN 114800253 B CN114800253 B CN 114800253B CN 202210627321 A CN202210627321 A CN 202210627321A CN 114800253 B CN114800253 B CN 114800253B
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000012530 fluid Substances 0.000 claims abstract description 165
- 239000002245 particle Substances 0.000 claims abstract description 84
- 230000033001 locomotion Effects 0.000 claims abstract description 16
- 238000011084 recovery Methods 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims description 32
- 238000005498 polishing Methods 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- 238000004064 recycling Methods 0.000 claims description 5
- 238000001179 sorption measurement Methods 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 230000005389 magnetism Effects 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 10
- 238000012546 transfer Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/005—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using a magnetic polishing agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to the technical field of silicon wafer processing, in particular to a grinding device and a method for a silicon carbide wafer, wherein the grinding device for the silicon carbide wafer comprises: the grinding mechanism comprises a grinding driving mechanism and a grinding base, and the grinding driving mechanism provides power for the rotary grinding of the silicon carbide wafer; the grinding fluid supply source comprises grinding fluid, magnetorheological fluid and a magnetic field, and the magnetorheological fluid is made to form magnetic clusters through the magnetic field, so that the motion trail of grinding particles in the grinding fluid is controlled; the abrasive particle recovery mechanism comprises a magnetic control device, and the abrasive particles are separated from the magnetorheological fluid through the magnetic control device and then recovered. The invention ensures that the grinding particles in the grinding fluid are uniformly distributed, the surface of the silicon carbide wafer is uniformly ground, and after the grinding is finished, the surface of the magnetic control equipment can be controlled to generate magnetism, so that the grinding particles are intensively collected, and the magnetorheological fluid is recycled.
Description
Technical Field
The invention particularly relates to the technical field of silicon wafer processing, and particularly relates to a grinding device and method for a silicon carbide wafer.
Background
As a third-generation semiconductor material, the single-crystal silicon carbide material has the characteristics of large forbidden band width, high thermal conductivity, large electronic saturation drift rate, high critical breakdown electric field, low relative dielectric constant, good chemical stability and the like, and is suitable for manufacturing electronic devices with high temperature, high frequency, high power and high integration degree. How to realize high-efficiency, high-precision and low-cost processing becomes an important problem to be solved urgently in developing silicon carbide materials at present. The silicon carbide wafer requires a thickness removal of about 100 microns of silicon carbide wafer prior to chemical mechanical polishing. The current grinding scheme can be divided into free abrasive grinding and fixed abrasive grinding according to the processing principle; the main defects are as follows: the processing principle of the free abrasive is three-body abrasion, namely, in the rotating process of the grinding large disc and the pressure main shaft, grinding liquid is added intermittently, the motion tracks of the abrasive in the grinding process are distributed randomly, and the uniformity of material surface removal is poor. The processing principle of the fixed abrasive grinding is two-body abrasion, and the exposed abrasive grain edges and corners of the surface slide and plough the surface of the silicon carbide to remove materials, but the surface is scratched frequently.
The fixed abrasive grinding pad can realize semi-random controllability of the motion trail of the abrasive in the grinding process, has better material removal uniformity, but causes more serious surface scratch, and obtains larger atomically smooth surface pressure after the subsequent CMP finishing; the grinding and removing of the free grinding materials are simple and convenient to operate, the cost is low, the engineering application is wide, the movement tracks of the grinding materials are randomly distributed in the grinding process, and the uniformity of material removal in processing is limited; in order to realize uniform material removal and low surface damage, a method for regulating and controlling the motion trail of free abrasive by using magnetorheological fluid is provided, but because the hardness of diamond is equivalent to that of silicon carbide in the mechanical removal process, the abrasive cutting edge can be worn to different degrees in the processing process, the abrasive cannot be recycled, and the worn abrasive needs to be separated from the magnetorheological fluid in time.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a grinding device and a grinding method for a silicon carbide wafer.
In order to solve the technical problems, the invention is solved by the following technical scheme: an apparatus for grinding a silicon carbide wafer, comprising:
the grinding mechanism comprises a grinding driving mechanism and a grinding base, the silicon carbide wafer is fixed on the grinding driving mechanism, and the grinding driving mechanism provides power for the rotary grinding of the silicon carbide wafer;
the grinding fluid supply source comprises grinding fluid, magnetorheological fluid and a magnetic field electric control unit, the magnetic field electric control unit generates a magnetic field, the grinding fluid and the magnetorheological fluid are mixed together, and the magnetorheological fluid forms magnetic clusters through the magnetic field, so that the motion trail of grinding particles in the grinding fluid is controlled;
the abrasive particle recovery mechanism is used for recovering the mixed solution of the grinding fluid and the magnetorheological fluid, comprises a magnetic control device, separates the grinding particles from the magnetorheological fluid through the magnetic control device, and intensively recovers the grinding particles in the grinding fluid to recycle the magnetorheological particles of the magnetorheological fluid.
Optionally, the grinding driving mechanism includes a rotary pressure spindle and a wafer fixing device, the rotary pressure spindle is connected to the wafer fixing device, the wafer fixing device is connected to the silicon carbide wafer, and the rotary pressure spindle drives the silicon carbide wafer to rotate under a predetermined pressure.
Optionally, the grinding base is one of a resin copper disc and a metal tin disc.
Optionally, a polishing pad is attached to the surface of the polishing base.
Optionally, the magnetic control device is specifically an electrically controlled magnetic rod, and the magnetic property of the surface of the electrically controlled magnetic rod is controlled, so that the magnetorheological particles of the magnetorheological fluid are adsorbed or have no adsorption effect.
Optionally, the abrasive particle recovery mechanism further comprises a grinding liquid discharge pipe, a liquid transmission container, a grinding liquid receiving container, a magnetorheological particle receiving and transferring pump and a magnetorheological liquid pipe, the liquid transmission container is connected with the grinding liquid receiving container and the magnetorheological particle receiving and transferring pump through two guide pipes, and the magnetorheological liquid pipe is connected with an output end of the magnetorheological particle receiving and transferring pump.
Optionally, the two conduits are respectively provided with a first electromagnetic valve and a second electromagnetic valve, the first electromagnetic valve controls the conduction condition of the grinding fluid receiving container, and the second electromagnetic valve controls the transportation condition of the magnetorheological particles receiving transfer pump.
A polishing method using the above polishing apparatus for a silicon carbide wafer, comprising:
providing grinding fluid, magnetorheological fluid and a magnetic field, covering the grinding fluid on a grinding base, and then enabling the magnetorheological fluid to form magnetic clusters through the magnetic field, so as to control the motion track of grinding particles in the grinding fluid, and driving a silicon carbide wafer to rotate and grind on the surface of the grinding base by using a grinding driving mechanism;
after grinding is finished, the grinding fluid flows into the abrasive particle recovery mechanism, the surface of the magnetic control equipment generates magnetic force, and grinding particles and magnetorheological fluid flow through the surface of the magnetic control equipment to be intensively recovered.
Optionally, the method for recovering the ground particles includes: after the grinding fluid and the magnetorheological fluid pass through the surface of the magnetic control equipment, the magnetorheological fluid is adsorbed on the surface of the magnetic control equipment, the first electromagnetic valve is opened, the second electromagnetic valve is closed, and grinding particles in the grinding fluid enter the grinding fluid bearing container to be collected.
Optionally, after the grinding particles are collected, the magnetic control device and the grinding fluid receiving container are washed by clean water, then the second electromagnetic valve is opened, the first electromagnetic valve is closed, the magnetic force on the surface of the magnetic control device disappears, the magnetic control device is washed by clean water again, the magnetorheological fluid is sent to the input port of the magnetorheological particle receiving transfer pump, and the magnetorheological fluid is conveyed by the magnetorheological particle receiving transfer pump, so that the cycle use of the magnetorheological fluid is realized.
Due to the adoption of the technical scheme, the invention has the remarkable technical effects that:
the grinding fluid supply source comprises grinding fluid, magnetorheological fluid and a magnetic field, the magnetorheological fluid forms magnetic clusters through the magnetic field, so that the movement track of grinding particles in the grinding fluid is controlled, the grinding particles in the grinding fluid are uniformly distributed, the surface of the silicon carbide wafer is uniformly ground, and after grinding is finished, the grinding particles are intensively collected through the surface controllable magnetism generation of magnetic control equipment, and the magnetorheological fluid is recycled.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic structural view of an apparatus for polishing a SiC wafer according to an embodiment of the present invention;
FIG. 2 is a schematic view illustrating an abrasive grain recovery mechanism of an apparatus for polishing a SiC wafer according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a magnetic cluster formed by magnetorheological fluid in the silicon carbide wafer grinding device according to the embodiment of the invention.
10. A magnetic field electronic control unit; 20. a grinding groove; 30. a resin grinding disc; 40. magnetorheological fluid and grinding fluid; 50. a polishing liquid supply unit; 60. rotating the pressure spindle; 70. a magnetorheological fluid recovery conduit; 80. a wafer fixing device; 90. a silicon carbide wafer; 100. a liquid container drain switch; 110. an abrasive particle recovery mechanism; 120. a magnetic field; 130. a polishing liquid receiving container; 140. the magnetorheological particles are connected with a transfer pump; 150. a magnetorheological fluid pipe; 160. a liquid transfer container; 170. grinding the drain pipe; 180. an electrically controlled magnetic bar.
Detailed Description
The present invention is further illustrated in detail by the following examples, which are illustrative of the invention
The invention is not limited to the following examples.
An apparatus for grinding a silicon carbide wafer, comprising:
the grinding mechanism comprises a grinding driving mechanism and a grinding base, the silicon carbide wafer is fixed on the grinding driving mechanism, and the grinding driving mechanism provides power for the rotary grinding of the silicon carbide wafer;
the grinding fluid supply source comprises grinding fluid, magnetorheological fluid and a magnetic field electric control unit, the magnetic field electric control unit generates a magnetic field, the grinding fluid and the magnetorheological fluid are mixed together, and the magnetorheological fluid forms magnetic clusters through the magnetic field, so that the motion trail of grinding particles in the grinding fluid is controlled;
the abrasive particle recovery mechanism is used for recovering the mixed solution of the grinding fluid and the magnetorheological fluid, comprises a magnetic control device, separates the grinding particles from the magnetorheological fluid through the magnetic control device, and intensively recovers the grinding particles in the grinding fluid to recycle the magnetorheological particles of the magnetorheological fluid.
As shown in fig. 1, the silicon carbide wafer grinding apparatus includes a grinding tank 20, a resin grinding disc 30, a magnetorheological fluid and a grinding fluid 40, a grinding fluid supply unit 50, a rotary pressure spindle 60, a wafer fixing device 80, a silicon carbide wafer 90, a magnetic field electronic control unit 10, a magnetorheological fluid recovery conduit 70, a liquid container discharge switch 100, and an abrasive particle recovery mechanism 110, wherein the grinding tank 20 stores the magnetorheological fluid and the grinding fluid 40, the grinding fluid supply unit 50 is used for injecting the grinding fluid into the grinding tank 20, the rotary pressure spindle 60, the wafer fixing device 80, and the silicon carbide wafer 90 are sequentially connected to perform rotary grinding on the lower surface of the silicon carbide wafer 90, during grinding, the magnetic field electronic control unit 10 generates a magnetic field 120, so that the magnetorheological fluid and the magnetorheological fluid in the grinding fluid 40 form magnetic clusters, a motion trajectory of grinding particles in the grinding fluid is controlled, the liquid container discharge switch 100 is used for controlling discharge of the ground magnetorheological fluid and the grinding fluid 40, and the magnetorheological fluid recovery conduit 70 is used for transmission of the magnetorheological fluid.
As shown in fig. 2, the abrasive particle recycling mechanism 110 includes a diamond grinding fluid receiving container 130, a magnetorheological particle receiving and transferring pump 140, a magnetorheological fluid tube 150, a fluid transporting container 160, a grinding fluid discharging tube 170, and an electrically controlled magnetic rod 180, when the body container discharge switch 100 is opened, the magnetorheological fluid and the grinding fluid 40 flow into the electrically controlled magnetic rod 180 through the grinding fluid discharging tube 170, and then the magnetorheological fluid and the grinding fluid 40 are separated and recycled through the fluid transporting container 160, the diamond grinding fluid receiving container 130 collects the grinding fluid, and the magnetorheological particle receiving and transferring pump 140 recycles the separated magnetorheological fluid through the magnetorheological fluid tube 150 and the magnetorheological fluid recycling conduit 70, and finally enters the grinding tank 20 for reuse.
In this embodiment, the abrasive particles in the polishing liquid are diamond particles.
In other embodiments, the abrasive particles are particles such as aluminum dioxide that do not attract magnetic substances.
The grinding driving mechanism comprises a rotary pressure spindle 60 and a wafer fixing device, the rotary pressure spindle 60 is connected with the wafer fixing device, the wafer fixing device is connected with the silicon carbide wafer 90, and the rotary pressure spindle 60 drives the silicon carbide wafer 90 to rotate under the condition of preset pressure.
In this embodiment, the predetermined pressure at which the rotating pressure spindle 60 drives the silicon carbide wafer 90 is 10kgf load.
The grinding base is one of a resin copper disc and a metal tin disc.
In this embodiment, the grinding base is specifically a resin grinding disc 30, the silicon carbide wafer 90 is ground on the resin grinding disc 30 in a rotating manner, and the damage of the grinding of the surface of the silicon carbide wafer 90 is reduced by the flexibility of the surface of the resin grinding disc 30.
The grinding fluid supply source further comprises a magnetic field electric control unit 10, and the magnetic field electric control unit 10 generates a magnetic field to control the movement condition of the magnetorheological fluid.
In this embodiment, when the silicon carbide wafer 90 approaches the resin grinding disc 30, the magnetic field electronic control unit 10 is turned on to generate the magnetic field 120, and the magnetorheological fluid is ground to form magnetic clusters, because the magnetorheological fluid and the grinding fluid 40 are mixed together, the motion trajectory of grinding particles in the grinding fluid can be effectively controlled, so that the lower surface of the silicon carbide wafer 90 is uniformly ground, and under the coordination control of the magnetorheological particles and the rotating pressure spindle 60, the cutting depth of the grinding particles on the surface of the silicon carbide wafer is smaller, and the ground surface damage can be reduced.
The magnetic control device is specifically an electric control magnetic rod 180, and the magnetic property of the surface of the electric control magnetic rod 180 is controlled, so that the magnetorheological fluid is adsorbed or has no adsorption effect, when the electric control magnetic rod 180 is electrified, the surface of the electric control magnetic rod 180 generates magnetic force, the surface of the electric control magnetic rod 180 adsorbs the magnetorheological fluid, and when the electric control magnetic rod 180 is powered off, the surface of the electric control magnetic rod 180 has no magnetic force, and the magnetorheological fluid can be separated from the surface of the electric control magnetic rod 180.
The abrasive particle recovery mechanism 110 further comprises a grinding liquid discharge pipe 170, a liquid transmission container 160, a grinding liquid receiving container 130, a magnetorheological particle receiving and transferring pump 140 and a magnetorheological fluid pipe 150, wherein the liquid transmission container 160 is respectively connected with the grinding liquid receiving container 130 and the magnetorheological particle receiving and transferring pump 140 through two guide pipes, and the magnetorheological fluid pipe is connected with the output end of the magnetorheological particle receiving and transferring pump 140 to transport magnetorheological fluid.
The two conduits are respectively provided with a first electromagnetic valve and a second electromagnetic valve, the first electromagnetic valve controls the conduction condition of the grinding fluid receiving container 130, and the second electromagnetic valve controls the transportation condition of the magnetorheological particles receiving and transporting pump 140.
In this embodiment, when the first electromagnetic valve needs to be opened, the second electromagnetic valve is closed; when the first electromagnetic valve is closed, the second electromagnetic valve is opened, and the first electromagnetic valve and the second electromagnetic valve work in turn.
The invention also provides a grinding method of the silicon carbide wafer, which comprises the following steps: the grinding fluid supply source comprises grinding fluid, magnetorheological fluid and a magnetic field, wherein the grinding fluid, the magnetorheological fluid and the magnetic field 120 are mixed together, the grinding fluid covers the grinding base, then the magnetorheological fluid forms magnetic clusters through the magnetic field 120, so that the motion track of grinding particles in the grinding fluid is controlled, a grinding driving mechanism is used for driving the silicon carbide wafer 90 to rotate and grind the surface of the grinding base, after grinding is finished, the surface of a magnetic control device is made to generate magnetic force, and the grinding fluid and the magnetorheological fluid flow through the surface of the magnetic control device to intensively recycle the grinding particles.
As shown in fig. 3, in this embodiment, the magnetic field 120 causes the magnetorheological fluid to form magnetic clusters, so as to control the movement track of the abrasive particles in the abrasive fluid, so that the abrasive particles are uniformly distributed on the grinding base, and the silicon carbide wafer 90 is uniformly contacted with the abrasive particles, so that the silicon carbide wafer 90 is uniformly contacted with the abrasive particles when rotating, and the surface of the silicon carbide wafer 90 is ground more smoothly.
The method for recovering abrasive particles comprises: after the grinding fluid and the magnetorheological fluid pass through the surface of the magnetic control equipment, the magnetorheological fluid is adsorbed on the surface of the magnetic control equipment, the first electromagnetic valve is opened, the second electromagnetic valve is closed, and the grinding fluid enters the grinding fluid receiving container to be collected.
After the grinding particles are collected, the magnetic control equipment and the grinding fluid receiving container are washed by clean water, then the second electromagnetic valve is opened, the first electromagnetic valve is closed, the magnetic force on the surface of the magnetic control equipment disappears, the magnetic control equipment is washed by the clean water again, the magnetorheological fluid is sent to an input port of the magnetorheological particle receiving and transferring pump, and the magnetorheological fluid is conveyed by the magnetorheological particle receiving and transferring pump, so that the cycle use of the magnetorheological fluid is realized.
The working principle of the grinding device for the silicon carbide wafer is as follows: after the resin grinding disc 30 is covered with the magnetorheological fluid and the grinding fluid 40, the silicon carbide wafer 90 is driven to rotate and grind through the rotating pressure spindle 60, the grinding particles in the grinding fluid are controlled to be uniformly distributed through the magnetic field 120, after grinding, the grinding particles in the grinding fluid are crushed and collected in the grinding fluid receiving container 130, the magnetorheological fluid passes through the magnetorheological particle receiving transfer pump 140 and then is injected into the grinding groove 20 again, and then the grinding particles in the grinding fluid are intensively recovered and recycled for recycling.
In addition, it should be noted that the specific embodiments described in the present specification may differ in the shape of the components, the names of the components, and the like. All equivalent or simple changes of the structure, the characteristics and the principle of the invention which are described in the patent conception of the invention are included in the protection scope of the patent of the invention. Various modifications, additions and substitutions for the specific embodiments described may be made by those skilled in the art without departing from the scope of the invention as defined in the accompanying claims.
Claims (8)
1. An apparatus for polishing a silicon carbide wafer, comprising:
the grinding mechanism comprises a grinding driving mechanism and a grinding base, the silicon carbide wafer is fixed on the grinding driving mechanism, and the grinding driving mechanism provides power for the rotary grinding of the silicon carbide wafer;
the grinding fluid supply source comprises grinding fluid, magnetorheological fluid and a magnetic field electric control unit, the magnetic field electric control unit generates a magnetic field, the grinding fluid and the magnetorheological fluid are mixed together, and the magnetorheological fluid forms magnetic clusters through the magnetic field, so that the motion trail of grinding particles in the grinding fluid is controlled;
the abrasive particle recycling mechanism is used for recycling abrasive liquid and a magnetorheological fluid mixed solution and comprises an abrasive liquid discharge pipe, a magnetic control device, a liquid conveying container, an abrasive liquid receiving container, a magnetorheological particle receiving and transferring pump and a magnetorheological liquid pipe, wherein the liquid conveying container is respectively connected with the abrasive liquid receiving container and the magnetorheological particle receiving and transferring pump through two guide pipes, the magnetorheological liquid pipe is connected with the output end of the magnetorheological particle receiving and transferring pump, a first electromagnetic valve and a second electromagnetic valve are respectively arranged on the two guide pipes, the first electromagnetic valve controls the conduction condition of the abrasive liquid receiving container, the second electromagnetic valve controls the transportation condition of the magnetorheological particle receiving and transferring pump, the abrasive liquid and the magnetorheological fluid mixed solution enter the magnetic control device through the abrasive liquid discharge pipe, the abrasive particles and the magnetorheological fluid are separated through the magnetic control device by means of adsorption or no adsorption effect on the magnetorheological particles of the magnetorheological fluid, the abrasive particles in the abrasive liquid are recycled, and the magnetorheological particles of the magnetorheological fluid are recycled.
2. The apparatus as claimed in claim 1, wherein the grinding driving mechanism comprises a rotary pressure spindle and a wafer holder, the rotary pressure spindle is connected to the wafer holder, the wafer holder is connected to the silicon carbide wafer, and the rotary pressure spindle rotates the silicon carbide wafer under a predetermined pressure.
3. The apparatus of claim 1, wherein the polishing pad is one of a resin copper pad and a metal tin pad.
4. The apparatus for polishing a silicon carbide wafer according to claim 3, wherein a polishing pad is attached to a surface of the polishing base.
5. The silicon carbide wafer grinding device according to claim 1, wherein the magnetic control device is an electrically controlled magnetic rod, and the magnetic properties of the surface of the electrically controlled magnetic rod are controlled to adsorb or eliminate the adsorption effect on the magnetorheological particles of the magnetorheological fluid.
6. A polishing method using the polishing apparatus for a silicon carbide wafer according to any one of claims 1 to 5, comprising:
providing grinding fluid, magnetorheological fluid and a magnetic field, covering the grinding fluid on a grinding base, and then enabling the magnetorheological fluid to form magnetic clusters through the magnetic field, so as to control the motion track of grinding particles in the grinding fluid, and driving a silicon carbide wafer to rotate and grind on the surface of the grinding base by using a grinding driving mechanism;
after grinding is finished, the grinding fluid flows into the abrasive particle recovery mechanism, the surface of the magnetic control equipment generates magnetic force, and grinding particles and magnetorheological fluid flow through the surface of the magnetic control equipment to be intensively recovered.
7. The grinding method according to claim 6, wherein the method for recovering the ground particles comprises: after the grinding fluid and the magnetorheological fluid pass through the surface of the magnetic control equipment, the magnetorheological fluid is adsorbed on the surface of the magnetic control equipment, the first electromagnetic valve is opened, the second electromagnetic valve is closed, and grinding particles in the grinding fluid enter the grinding fluid bearing container to be collected.
8. The grinding method according to claim 7, wherein after the grinding particles are collected, the magnetic force control device and the grinding fluid receiving container are washed by clean water, then the second electromagnetic valve is opened, the first electromagnetic valve is closed, the magnetic force on the surface of the magnetic force control device disappears, the magnetic force is washed again by clean water, the magnetorheological fluid is sent to the input port of the magnetorheological particle receiving and transferring pump, and the magnetorheological fluid is transferred by the magnetorheological particle receiving and transferring pump, so that the cycle use of the magnetorheological fluid is realized.
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