JP2008137093A - Polishing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a polishing device improved in precision in processing a wafer. <P>SOLUTION: In this polishing device, a control part controls operation of a liquid supply part for feeding a liquid (demineralized water) into a groove part of a suction member 51 until the wafer 30 is conveyed above at least the suction member 51 by a conveyance device 100 and controls operation of the conveyance device 100 to convey the wafer 30 up to a first upper position A positioned above the suction member 51, lower the wafer 30 down to a second upper position B positioned above the suction member 51 and below the first upper position A from the first upper position A at a first speed, and lower the wafer 30 down onto an upper face of the suction member 51 from the second upper position B at a second speed being lower than the first speed. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a polishing apparatus for flattening the surface of an object to be polished such as a semiconductor wafer.

  Conventionally, as a polishing apparatus for flattening the surface of an object to be polished such as a semiconductor wafer, a wafer holding apparatus for holding the wafer in a state where the polished surface is exposed, and a polished surface of the wafer held by the wafer holding apparatus And a polishing member to which a polishing pad opposite to the substrate is attached. While both of them are rotated, the polishing pad is pressed against the surface to be polished of the wafer, and the polishing member is swung in the contact surface in the both directions. A configuration for polishing a wafer is known. In addition to such mechanical polishing, chemical mechanical polishing (Chemical Mechanical Polishing) that promotes the above polishing by the chemical action of the polishing agent by supplying a polishing agent (polishing liquid) to the contact surface between the polishing pad and the wafer. A CMP apparatus that performs Polishing (CMP) is also known.

The polishing process of the wafer using the polishing apparatus having such a configuration is performed by bringing the polishing pad into contact with the surface to be polished which is rotated and held by the adsorption member of the wafer holding apparatus while rotating the polishing pad. By reciprocating the pad in the horizontal direction while rotating, the entire surface of the wafer is uniformly polished. In addition, when using such a polishing apparatus, the outer periphery of the wafer is gripped as a wafer transfer apparatus that loads the wafer face-up onto the suction member or unloads the wafer from the suction member after face-up. A conveying device is generally used (see, for example, Patent Document 1).
JP 2002-75935 A

  In the polishing apparatus (CMP apparatus), an annular groove is formed in the vicinity of the outer peripheral portion on the upper surface of the adsorption member, and by supplying water (pure water) to this groove, the abrasive enters the lower surface side of the wafer. There is something to prevent. In such a polishing apparatus, conventionally, in order to improve the throughput of the wafer, the wafer is placed on the suction member from the upper surface to the lower surface at a relatively high speed by using a transfer device. For this reason, if cleaning water remains on the upper surface of the adsorption member due to cleaning with pure water, when the wafer is placed on the upper surface of the adsorption member, the cleaning water remaining on the upper surface of the adsorption member is pushed outward. As a result, part of the water in the groove also flows outward, bubbles are generated in the water (water seal) in the groove, and the abrasive enters the lower surface side of the wafer from the part where the bubbles are generated, thereby reducing the processing accuracy of the wafer. There was a fear.

  The present invention has been made in view of such problems, and an object of the present invention is to provide a polishing apparatus that improves the processing accuracy of a polishing object.

  In order to achieve such an object, a polishing apparatus according to the present invention includes a holding device that detachably sucks and holds a polishing object and a polishing head that holds a polishing member, and uses the conveying device to remove the polishing object. The polishing object is conveyed to the holding device, and the conveyed polishing object is sucked and held by the holding device, and the polishing object is polished by moving the polishing object relative to the polishing object in contact with the polishing object. In such a polishing apparatus, the holding device supplies the liquid to the disk-shaped adsorption member on which the polishing object is adsorbed and held on the upper surface, and the annular groove formed near the outer periphery of the upper surface of the adsorption member. And the liquid supply unit is configured so that the object to be polished is adsorbed and held on the upper surface of the adsorption member in a state where the liquid is supplied from the liquid supply unit to the groove. A control unit for controlling the operation is provided, and the control unit controls the operation of the liquid supply unit so as to supply the liquid to the groove part until the object to be polished is conveyed at least above the adsorption member by the conveying device. The polishing object is transported to a first upper position located above the adsorption member, and descends at a first speed from the first upper position to a second upper position located above the adsorption member and below the first upper position. Let the second upper It controls the operation of the put et adsorption top to the transport device so as to descend at a slower than the first speed the second speed of member.

  In the above-described invention, the second speed is preferably a speed at which bubbles do not occur in the liquid in the groove when the polishing object is lowered to the upper surface of the adsorption member.

  According to the present invention, the processing accuracy of an object to be polished can be improved.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows a CMP apparatus (chemical mechanical polishing apparatus) which is a representative example of the polishing apparatus according to the present invention. The CMP apparatus 1 is provided at a position above the wafer holding apparatus 50 and is held on the wafer holding apparatus 50 so that the wafer 30 as an object to be polished can be detachably attracted and held on the upper surface thereof. And a polishing head 40 holding a polishing member 45 to which a polishing pad 46 facing the surface to be polished 31 of the wafer 30 is attached. In this CMP apparatus 1, the size (diameter) of the polishing pad 46 is smaller than the size (diameter) of the wafer 30 (that is, the polishing pad 46 is smaller in diameter than the wafer 30), and the polishing pad 46 is brought into contact with the wafer 30. The entire surface to be polished 31 (upper surface) of the wafer 30 can be polished by relatively moving both in the state.

  A support frame 20 that supports the wafer holding device 50 and the polishing head 40 extends in the Y direction (this is a direction perpendicular to the paper surface in the front-rear direction) on the horizontal base 21 and the base 21. A first stage 22 provided on a rail (not shown) provided so as to be movable in the Y direction, a vertical frame 23 provided so as to extend vertically (Z direction) from the first stage 22, and A second stage 24 provided above the vertical frame 23, a horizontal frame 25 provided so as to extend horizontally (X direction) from the second stage 24, and an X direction (left-right direction) on the horizontal frame 25 And a third stage 26 that is movably provided.

  A first electric motor M1 is provided in the first stage 22, and the first stage 22 can be moved in the Y direction along the rail by being driven to rotate. In addition, a second electric motor M2 is provided in the third stage 26, and the third stage 26 can be moved in the X direction along the horizontal frame 25 by rotationally driving the second electric motor M2. For this reason, the third stage 26 can be moved to an arbitrary position above the wafer holding device 50 by combining the rotation operations of the electric motors M1 and M2.

  The wafer holding device 50 is horizontally attached to an upper end portion of a rotary shaft 28 provided vertically extending from a table support portion 27 provided on the base 21. The rotary shaft 28 is rotated by rotationally driving a third electric motor M3 provided in the table support portion 27, thereby rotating the wafer holding device 50 in the XY plane (horizontal plane). be able to.

  The polishing head 40 is attached to a lower end portion of a spindle 29 that extends vertically downward from the third stage 26. The spindle 29 is rotated by rotationally driving a fourth electric motor M4 provided in the third stage 26. As a result, the entire polishing head 40 is rotated to bring the polishing pad 46 into the XY plane ( In a horizontal plane).

  2 and 3, the wafer holding device 50 includes a suction member 51 for vacuum-sucking the wafer 30, and a rotation holding member 70 that holds the suction member 51 and is connected to the rotary shaft 28. It is composed mainly of. The adsorption member 51 is formed in a disk shape using a material having high rigidity such as stainless steel or ceramic, and is attached to the upper surface of the rotation holding member 70 by a fixing means such as a screw. The outer diameter of the suction member 51 is slightly smaller than the outer diameter of the wafer 30, and when the wafer 30 is placed on the upper surface of the suction member 51 using the transport device 100, the gripping member of the transport device 100. 115 (claw portion 116) does not come into contact with the adsorbing member 51 (see FIG. 12).

  As shown in FIG. 3, an annular first convex portion 52 is formed on the upper surface of the adsorption member 51 as viewed from the upper surface side, and supports the vicinity of the outer peripheral portion of the wafer 30. As shown in FIG. 4, a plurality of cylindrical second convex portions 53 are formed on the inner peripheral side of the first convex portion 52 on the upper surface of the adsorption member 51, and support the center side of the wafer 30. It is like that. As shown in FIG. 5, the heights of the tip surfaces (upper surfaces) of the first convex portion 52 and the second convex portion 53 are configured to be equal to each other, and these tip surfaces are the same plane with high accuracy. It is designed to be located inside. The height of the tip surfaces of the first and second convex portions 52 and 53 is about several hundred μm.

  As shown in FIG. 2, a first center hole 58 is formed at the inner center of the suction member 51 so as to open on the lower surface side of the suction member 51. As shown in FIG. 3, twelve radiation passages 59 arranged at equal intervals (at intervals of 30 degrees) are formed to extend toward the outer peripheral portion of the adsorption member 51. Further, a plurality of suction holes 55 are formed in the radiation passage 59 so as to extend upward from the middle of the radiation passage 59, and a plurality of second protrusions 53 (and first protrusions) on the upper surface side of the suction member 51. 52), a recess 54 is formed between them (see also FIG. 6).

  As shown in FIGS. 3 and 5, an annular third convex portion 60 is formed on the outer peripheral side of the first convex portion 52 on the upper surface of the adsorption member 51 as viewed from the upper surface side. An annular groove 61 is formed between the first and second grooves 52. The height of the tip surface (upper surface) of the third convex portion 60 is set to be lower by about 1 mm than the tip surface (upper surface) of the first convex portion 52. A water supply hole 62 is formed in the vicinity of the outer periphery of the adsorption member 51 so as to penetrate vertically. The upper end of the water supply hole 62 is opened by the groove 61, and the lower end is the water supply of the rotation holding member 70. It is connected to the passage 74. And water is supplied to the groove part 61 from this water supply hole 62, and the groove part 61 is filled with water (water seal).

  As shown in FIGS. 5 and 7, a resin coating layer 65 such as polyurethane resin, acrylic resin, fluorine rubber, or the like is provided on the upper surface of the adsorption member 51, and the first and second convex portions 52 are provided. , 53 is formed on the surface (upper surface) of the coating layer 65 provided on the front end surface of the wafer 53. Then, the suction surface 67 of the wafer 30 is brought into contact with the suction surface 67 of the suction member 51 by bringing the suction surface 67 into contact with the suction surface 32 (lower surface) of the wafer 30 and applying a negative pressure to each suction hole 55. Vacuum adsorption. In this manner, the wafer 30 is sucked and held by the wafer holding device 50 in a state where the lower surface (the sucked surface 32) of the wafer 30 is vacuum sucked on the upper surface (the sucking surface 67) of the sucking member 51.

  The coating layer 65 is formed by applying (and drying) a primer (not shown) on the surface side of the adsorption member 51 with a spray gun or the like to form a base layer 66, and then forming a polyurethane resin on the base layer 66. Alternatively, it can be obtained by applying (and drying) a coating material made of acrylic resin, fluorine rubber or the like with a spray gun or the like. A flattened suction surface 67 is formed on the surface of the coating layer 65 provided on the tip surfaces of the first and second convex portions 52 and 53 by polishing using a lapping plate and a polishing liquid. The

  In this way, by providing the coating layer 65 on the surface side of the adsorption member 51, as shown in FIG. 7B, the adsorption surface 32 of the wafer 30 and the adsorption surface 67 formed on the surface of the coating layer 65, Even if the foreign matter X is interposed between them, since the foreign matter X tries to be buried in the coating layer 65 due to the elasticity of the coating layer 65, the wafer 30 is not deformed by the foreign matter X, and the wafer 30 is flat in the suction state. The degree can be increased. Further, by performing polishing and increasing the flatness of the suction surface 67 (for example, to about 1 μm), the undulation of the wafer 30 can be further reduced, and the flatness of the wafer 30 in the suction state can be further increased. Can do.

  The underlayer 66 is used to improve the coating property of the coating layer 65 to the adsorption member 51 and is not necessarily required depending on the case. Further, the polishing process as described above is not necessarily performed on the surface of the coating layer 65 (the suction surface 67).

  Further, as shown in FIG. 5, an annular region having a lower height than the first convex portion 52 including the third convex portion 60 is provided on the outer peripheral side of the first convex portion 52 on the upper surface of the adsorption member 51. B1 is provided. As described above, by providing the annular region B1 having a height lower than that of the first convex portion 52 so as not to attract and hold the outer peripheral portion of the wafer 30, even if the wafer 30 receives a polishing load, Since the outer peripheral portion is deformed downward, the outer peripheral portion of the wafer 30 is hardly polished, and excessive polishing of the outer peripheral portion of the wafer 30 can be prevented.

  As shown in FIGS. 2 and 3, the rotation holding member 70 is formed in a disk shape using a material having high rigidity such as stainless steel or ceramic, and is attached horizontally to the upper portion of the rotation shaft 28 by fixing means such as screws. It is done. Therefore, the suction member 51 attached to the upper surface side of the rotation holding member 70 is held by the rotation holding member 70 so as to be rotatable in a horizontal plane.

  A second center hole 71 is vertically formed through the center of the rotation holding member 70, and the upper end of the second center hole 71 is connected to the first center hole 58 of the suction member 51 and the lower end. Is connected to an air operated valve 81 (see FIG. 8) via a pipe line (not shown). Thus, each suction hole 55 of the suction member 51 is connected to the air operated valve 81 (see FIG. 8) via the radiation passage 59, the first and second center holes 58 and 71, and a pipe line (not shown).

  A rectangular groove is formed in a spiral shape on the upper surface of the rotation holding member 70, and a cooling water channel 72 extending in a spiral shape is formed between the lower surface of the adsorption member 51. An inner peripheral portion of the cooling water passage 72 is connected to a cooling water supply device (not shown) via a pipe line (not shown), and an outer peripheral portion is connected to a drain hole (not shown) formed in the rotation holding member 70. ing. The water having a predetermined temperature supplied from the cooling water supply device passes through the spiral cooling water channel 72 from the inner peripheral side to the outer peripheral side so as to keep the temperature of the wafer suction device 50 (the rotation holding member 70) constant. It has become.

  Further, a water supply passage 74 is formed in the vicinity of the outer peripheral portion of the rotation holding member 70 so as to penetrate vertically. The upper end portion of the rotation holding member 70 is connected to the water supply hole 62 of the adsorption member 51 and the lower end portion. Is connected to an open / close electromagnetic valve 85 (see FIG. 8) via a pipe line (not shown). Thereby, the water supply hole 62 of the adsorption | suction member 51 is connected with the opening-and-closing solenoid valve 85 through the water supply channel | path 74 and the pipe line which is not shown in figure.

  As described above, each suction hole 55 of the suction member 51 is connected to the air operated valve 81 as shown in FIG. 8 through the radiation passage 59, the first and second center holes 58 and 71, and a conduit (not shown). Connected to one of the ports. On the other hand, the other port of the air operated valve 81 is supplied with a vacuum pump 82 as a vacuum source, a compressor 83 that supplies air regulated to fine pressure air for vacuum breaking, and a pure water supply that can supply pure water. Part 84 is connected.

  The air operated valve 81 receives the electromagnetic valve actuation signal from the control unit 90, and each suction hole 55 is connected to the vacuum pump 82, each suction hole 55 is connected to the compressor 83, and each suction hole 55. Has a function of switching between a state connected to the pure water supply unit 84 and a state where none of the suction holes 55 is connected. Therefore, when each suction hole 55 is connected to the vacuum pump 82 by the switching operation of the air operated valve 81, a negative pressure is generated in each suction hole 55 by the operation of the vacuum pump 82. When each suction hole 55 is connected to the compressor 83, high pressure air for vacuum breakage is supplied from the compressor 83 to each suction hole 55. Further, when each suction hole 55 is connected to the pure water supply unit 84, water (pure water) from the pure water supply unit 84 is supplied to the upper surface side of the suction member 51 from each suction hole 55.

  Further, the water supply hole 62 of the adsorbing member 51 is connected to one port of the open / close electromagnetic valve 85 via a water supply passage 74 and a pipe line (not shown). On the other hand, a pure water supply unit 84 is connected to the other port of the open / close electromagnetic valve 85. When the opening / closing solenoid valve 85 is opened by receiving the solenoid valve actuation signal from the control unit 90, the water supply hole 62 and the pure water supply unit 84 are connected. Therefore, when the water supply hole 62 is connected to the pure water supply unit 84 by the opening operation of the open / close electromagnetic valve 85, the water (pure water) from the pure water supply unit 84 is supplied to the groove 61 from the water supply hole 62.

  Incidentally, the transfer device 100 is a transfer device for transferring the wafer 30 to the upper surface of the suction member 51, and is disposed on the base portion 101 and the upper portion of the base portion 101 as shown in FIGS. 9 and 10. The transfer arm unit 105 and a gripping unit 110 disposed at the tip of the transfer arm unit 105 are mainly configured. The operation of the transport device 100 is controlled by the control unit 90 (see FIG. 8). The transfer arm unit 105 includes a plurality of arm members 106, 107, and 108 that are pivotally connected to each other using a coupling mechanism (not shown), and can transfer the wafer 30 held by the holding unit 110 in the vertical and horizontal directions. ing.

  As shown in FIG. 11, the grip portion 110 is disposed at the distal end portion of the arm member 108 located on the distal end side, and includes an air chuck 111, three finger members 112 coupled to the air chuck 111, It has three gripping members 115 each attached to the tip of the finger member 112. The air chuck 111 is a so-called rotary drive type air chuck, and is configured to open and close the finger member 112 and the gripping member 115 connected to the air chuck 111 with respect to the wafer 30 by using air pressure. The rotary drive type air chuck 111 is configured to open and close the three finger members 112 and the gripping member 115 using one rotary actuator (not shown). The wafer 30 held by the portion 110) can be centered (centered).

  Each of the three finger members 112 is formed in an elongated plate shape, and its base end is connected to the air chuck 111. As shown in FIGS. 10 and 11, the air chuck 111 is in a substantially horizontal plane (in the same plane). Are arranged at intervals of 120 degrees (equal intervals). The three finger members 112 are opened and closed in the longitudinal direction of the finger member 112 (together with the gripping member 115) according to the opening and closing operation of the air chuck 111.

  The holding member 115 is formed in a block shape using a resin material such as polyetheretherketone (PEEK), and is attached to the distal end portion of the finger member 112 using a fixing means such as a screw. As shown in FIG. 12, a claw portion 116 that can be locked to the lower side of the outer edge portion of the wafer 30 is formed below the grip member 115 so as to protrude toward the air chuck 111 (inward of the grip portion 110). The gripping member 115 is closed and moved with respect to the wafer 30 by the operation of the air chuck 111, and the claw portion 116 is locked to the lower side of the outer edge portion of the wafer 30, so that the three gripping members 115 (gripping portions 110) The wafer 30 can be gripped from above.

  In order to polish the wafer 30 using the CMP apparatus 1 having such a configuration, first, the wafer 30 to be polished is suction-attached to the upper surface of the suction member 51 in the wafer holding device 50. Next, the rotating shaft 28 is driven by the electric motor M3 to rotate the wafer holding device 50 and the wafer 30. Subsequently, the electric motors M1 and M2 are driven to position the third moving stage 26 above the wafer 30, and the spindle 29 is driven by the electric motor M4 to rotate the polishing head 40. Next, the polishing head 40 is lowered using an air cylinder (not shown) that moves the polishing head 40 up and down, and the polishing surface (lower surface) of the polishing pad 46 is pressed against the surface to be polished 31 (upper surface) of the wafer 30. Like that.

  At this time, predetermined air is supplied into the polishing head 40 from an air supply source (not shown), and the contact pressure between the wafer 30 and the polishing pad 46 is set to a predetermined value by the air pressure in the polishing head 40. Then, the electric motors M1 and M2 are driven to swing the polishing head 40 in the XY direction (the in-plane direction of the contact surface between the wafer 30 and the polishing pad 46). At the same time, the polishing agent is pumped from a polishing agent supply device (not shown) to supply the polishing agent to the lower surface side of the polishing pad 46. As a result, the surface to be polished 31 of the wafer 30 is polished by the rotational motion of the wafer 30 itself and the rotational and swinging motion of the polishing head 40 (that is, the polishing pad 46) while being supplied with the abrasive.

  By the way, in order to attract and attach the wafer 30 to the wafer holding device 50, first, using the transfer device 100, an unprocessed product placed on a wafer placement table (not shown) located near the wafer holding device 50. The wafer 30 is transferred to a predetermined first upper position A (see FIG. 12A) located above the suction member 51. The first upper position A is set to a height position that is separated from the upper surface of the suction member 51 by 11.5 mm, for example.

  At this time, the operation of the transfer device 100 is controlled by the control unit 90. The control unit 90 opens and closes when the transfer device 100 grips the wafer 30 placed on a wafer placement table (not shown). The electromagnetic valve 85 is opened to control to supply water (pure water) from the pure water supply unit 84 to the groove 61 of the adsorption member 51. Thereby, the water that has passed through the water supply passage 74 of the rotation holding member 70 and the water supply hole 62 of the adsorption member 51 is supplied to the groove portion 61 from the pure water supply portion 84 via a conduit (not shown), and the wafer 30 is Before being placed on the upper surface of the adsorption member 51, the groove 61 is filled with water (water seal).

  Next, as shown in FIG. 12B, the wafer 30 is lowered from the first upper position A to the predetermined second upper position B using the transfer device 100 at the first speed. Note that the second upper position B is located above the suction member 51 and below the first upper position A, and is set to a height position that is 2 mm away from the upper surface of the suction member 51, for example. Further, the first speed is set to 30 mm / sec, for example.

  Next, as shown in FIG. 12C and FIG. 13, the wafer 30 is lowered from the second upper position B to the upper surface of the suction member 51 at a second speed slower than the first speed using the transfer device 100. Let The second speed is set to 1.2 mm / sec, for example. At this time, the gripping member 115 of the transfer device 100 is moved away from the wafer 30 and separated from the wafer 30 (note that at this time, the gripping part 110 is moved slightly downward to release the claw part 116 below the wafer 30). The wafer 30 is placed on the upper surface of the suction member 51 by retracting the grip 110 of the transfer device 100 from the wafer suction device 50, and the wafer 30 is placed on the suction surface 67 (upper surface) of the suction member 51. The suction surface 32 (lower surface) comes into contact. At this time, as described above, the center of the wafer 30 is made to coincide with the rotation center of the wafer suction device 50, that is, the suction member 51.

  Then, the control unit 90 performs control to switch the air operated valve 81 to connect each suction hole 55 to the vacuum pump 82, and applies a negative pressure to each suction hole 55 of the suction member 51 using the vacuum pump 82. Thus, the suction surface 32 of the wafer 30 is vacuum-sucked to the suction surface 67 of the suction member 51. In this manner, the wafer 30 is sucked and held on the upper surface of the suction member 51 in a state where water (water seal) is supplied to the groove 61 of the suction member 51 by the wafer suction device 50.

  When removing the wafer 30 from the wafer suction device 50, the suction holes 55 are connected to the compressor 83 by the switching operation of the air operated valve 81, so that high-pressure air is supplied from the compressor 83 to the suction holes 55 and vacuum breakage occurs. Done. Further, when the suction surface 67 (upper surface) of the suction member 51 is washed, the water (pure water) from the pure water supply section 84 is connected by connecting the suction holes 55 to the pure water supply section 84 by the switching operation of the air operated valve 81. Water) is supplied onto the suction surface 67 from each suction hole 55.

  As a result, according to the CMP apparatus 1 of the present embodiment, the water (pure water) from the pure water supply unit 84 is removed from the adsorption member 51 before the wafer 30 is conveyed above the adsorption member 51 by the conveyance apparatus 100. The wafer 30 is supplied to the groove portion 61 and is slower than the first speed (30 mm / sec) from the second upper position B positioned below the first upper position A above the suction member 51 to the upper surface of the suction member 51. Since the water is lowered at the second speed (1.2 mm / sec), the water remaining on the upper surface of the adsorption member 51 is slowly pushed outward, so that bubbles are generated in the water (water seal) in the groove 61. Can be prevented. Therefore, it is possible to prevent the abrasive from entering the lower surface side of the wafer 30 from the portion where bubbles are generated, and the wafer 30 is moved from the first upper position A to the second upper position B at a speed higher than the second speed. Since it is lowered at a speed of 1, it is possible to improve the processing accuracy of the wafer 30 (particularly, the polishing uniformity in the vicinity of the outer periphery of the wafer 30 where the abrasive easily enters) without significantly reducing the throughput of the wafer 30. become.

  Further, as a result of an experiment conducted by the inventors of the present invention setting the second speed to 5 mm / sec, it was confirmed that bubbles were generated in the water (water seal) of the groove portion 61. As described above, the second speed is preferably a speed at which bubbles are not generated in the water (water seal) of the groove 61 when the wafer 30 is lowered to the upper surface of the adsorption member 51. It is possible to reliably prevent the abrasive from entering the lower surface side of the wafer 30.

  In the above-described embodiment, the coating layer 65 is provided on the surface side of the adsorption member 51. However, the present invention is not limited to this, and such a coating layer may not be provided.

  Further, in the above-described embodiment, when the transfer device 100 grips the wafer 30 placed on the wafer placement table (not shown), water (pure water) from the pure water supply unit 84 is adsorbed to the adsorption member 51. However, the present invention is not limited to this, and water may be supplied to the groove 61 before the wafer 30 is transferred at least above the adsorption member 51 by the transfer device 100. .

  Furthermore, in the above-described embodiment, water (pure water) is supplied to the groove 61 of the adsorbing member 51. However, the present invention is not limited to this, and any liquid that does not adversely affect polishing may be used.

It is a front view which shows the CMP apparatus which is an example of the grinding | polishing apparatus which concerns on this invention. It is a front sectional view of a wafer holding device. It is a top view of a wafer holding device. It is an enlarged plan view which shows the vicinity of a 1st convex part. It is an expanded sectional view showing the neighborhood of the 1st convex part. It is an enlarged plan view showing the vicinity of the suction hole. It is sectional drawing which shows typically the state by which the wafer was adsorbed | sucked to the wafer holding apparatus. It is a piping diagram (block diagram) of a wafer holding device. It is a front view of a conveying apparatus. It is a top view of a conveying apparatus. It is a perspective view which shows the holding part of a conveying apparatus. It is explanatory drawing which shows the process in which a wafer is mounted in the adsorption | suction base material of a wafer holding device with a conveying apparatus. It is a front view which shows the state in which the wafer was mounted in the adsorption | suction base material of a wafer holding device by the conveying apparatus.

Explanation of symbols

1 CMP apparatus (polishing apparatus) 30 Wafer (polishing object)
40 Polishing Head 45 Polishing Member 46 Polishing Pad 50 Wafer Holding Device (Holding Device)
51 adsorbing member 61 groove 84 pure water supply part (liquid supply part)
90 Control unit 100 Conveying device

Claims (2)

A holding device that detachably adsorbs and holds an object to be polished and a polishing head that holds an abrasive member. The polishing object is transferred to the holding device using a transfer device, and the transferred polishing object is transferred to the holding device. In the polishing device configured to perform the polishing of the polishing object by holding the suction member by the holding device and relatively moving the polishing member while contacting the polishing object,
The holding device includes a disk-like suction member on which the polishing object is suction-held on the upper surface, and a liquid supply unit that supplies liquid to an annular groove formed near the outer peripheral portion of the upper surface of the suction member. And the polishing object is configured to be adsorbed and held on the upper surface of the adsorption member in a state where the liquid is supplied from the liquid supply unit to the groove.
A controller for controlling the operation of the liquid supply unit and the transport device
The control unit controls the operation of the liquid supply unit so as to supply the liquid to the groove part until the polishing object is conveyed at least above the adsorption member by the conveyance device, and
The polishing object is transported to a first upper position located above the adsorption member, and is first from the first upper position to a second upper position located above the adsorption member and below the first upper position. The polishing apparatus controls the operation of the conveying device so as to lower at a second speed lower than the first speed from the second upper position to the upper surface of the suction member. .   2. The polishing apparatus according to claim 1, wherein the second speed is a speed at which bubbles do not occur in the liquid in the groove when the polishing object is lowered to the upper surface of the adsorption member.

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