CN114792748A - LED chip processing method - Google Patents
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- CN114792748A CN114792748A CN202210714742.5A CN202210714742A CN114792748A CN 114792748 A CN114792748 A CN 114792748A CN 202210714742 A CN202210714742 A CN 202210714742A CN 114792748 A CN114792748 A CN 114792748A
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- 238000003672 processing method Methods 0.000 title claims description 8
- 239000002253 acid Substances 0.000 claims abstract description 44
- 230000007797 corrosion Effects 0.000 claims abstract description 33
- 238000005260 corrosion Methods 0.000 claims abstract description 33
- 238000005520 cutting process Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000000576 coating method Methods 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000001259 photo etching Methods 0.000 claims abstract description 19
- 238000012360 testing method Methods 0.000 claims abstract description 18
- 238000001704 evaporation Methods 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 230000008020 evaporation Effects 0.000 claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 238000007781 pre-processing Methods 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000005336 cracking Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 230000032683 aging Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 32
- 230000000694 effects Effects 0.000 description 5
- 239000003292 glue Substances 0.000 description 4
- 238000003698 laser cutting Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02076—Cleaning after the substrates have been singulated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dicing (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a method for processing an LED chip, which relates to the technical field of chip processing and aims to improve the light-emitting efficiency of the manufactured LED chip and reduce the light intensity attenuation; carrying out surface cutting and carrying out hot acid corrosion on scribing grooves generated by cutting to obtain a front-surface scribed round crystal, wherein each sub-area on the front-surface scribed round crystal comprises a table-board structure, and the scribing grooves are boundaries among the sub-areas; processing the wafer subjected to front surface scribing by photoetching and evaporation so as to obtain a positive electrode and a negative electrode with metal coatings on each subarea; splitting according to the sub-regions to obtain a plurality of single-grain LED chips and testing; the invention has the advantages that the brightness of the processed chip is improved, the light-emitting efficiency is improved, and the aging resistance is strong.
Description
Technical Field
The invention relates to the technical field of chip processing, in particular to the technical field of LED chip processing methods.
Background
The LED chip is processed from a wafer, and the processing process involves processes such as photolithography and dicing, for example, in order to divide the wafer into single crystal grains, the cutting needs to be performed, and the size of the LED chip is in the micron order, so the requirement on precision in the cutting process is high, and the quality of the cutting quality directly affects the quality of the chip, especially the reliability of the device.
On the other hand, when laser cutting is carried out, because the laser beam has certain width and energy, in the process of tangent, the side surface can be burnt due to the influence of the laser energy to cause the GaN charring at the edge of the chip to influence the light emission of the light inside the chip, so that the photoelectric parameters of the GaN-based LED chip of the sapphire substrate can be influenced in the laser cutting process to cause the light intensity attenuation of the chip, and meanwhile, the laser cutting can also have the stress effect caused by the thermal effect of the laser on the material.
The photoelectric parameters of the LED chip are very important detection indexes, and in order to ensure the production quality, the above-mentioned disadvantages need to be overcome.
Disclosure of Invention
The invention aims to: the light emitting efficiency of the manufactured LED chip is improved, and the light intensity attenuation is reduced. In order to solve the above technical problems, the present invention provides a method for processing an LED chip.
The invention specifically adopts the following technical scheme for realizing the purpose:
an LED chip processing method comprises the following steps:
preprocessing a wafer, and carrying out surface photoetching to obtain a plurality of mesa structures distributed in an array;
carrying out surface cutting and carrying out hot acid corrosion on scribing grooves generated by cutting to obtain a front-surface scribed round crystal, wherein each sub-area on the front-surface scribed round crystal comprises a table-board structure, and the scribing grooves are boundaries among the sub-areas;
processing the wafer subjected to the front surface scribing by photoetching and evaporation so as to obtain a positive electrode and a negative electrode with metal coatings on each subarea;
and splitting according to the sub-regions to obtain a plurality of single-grain LED chips and testing.
Preferably, the pre-treating the wafer includes performing a cleaning operation.
Preferably, the surface cutting and the hot acid corrosion of the scribing groove generated by the cutting comprise the following steps:
depositing a layer on the surface of the wafer by PECVD process
;
In that
Coating tangent protective glue on the surface of the substrate, and performing laser tangent according to the mesa structure;
removing the tangent protective adhesive after finishing laser tangent;
carrying out hot acid corrosion on the tangent black laser burning mark by using high-temperature hot acid;
removing surfaces of wafers
。
Preferably, the hot acid adopted by the hot acid corrosion is
Solutions and
the mixture of the components of the solution is,
solutions and
the volume ratio of the solution was 3:1.
Preferably, the
The concentration of the solution is 95-98 percent, and the solution is prepared by mixing the raw materials
The concentration of the solution is not less than 85%.
Preferably, the temperature of the hot acid etching is 220 ℃ to 250 ℃, and the etching time is 15 minutes.
Preferably, said removing the surface of the wafer
The method comprises the following steps: the wafer was immersed in a BOE solution bath for 4 minutes, then rinsed and spun dry.
Preferably, the processing the wafer subjected to front surface dicing through photoetching and evaporation comprises the following steps:
presetting a positive electrode pattern and a negative electrode pattern on each subarea;
evaporating an ITO transparent surface film on the surface of the wafer with the front surface scribed, coating photoresist on the surface of the ITO transparent surface film, wherein the photoresist does not cover the negative electrode pattern;
photoetching the positive electrode pattern to obtain an ITO pattern, wherein the ITO pattern is a circle with a diameter smaller than that of the positive electrode pattern;
etching the uncovered part of the photoresist on the ITO transparent surface film through ITO corrosion, and then removing the photoresist on the surface of the ITO transparent surface film;
carrying out ITO annealing;
depositing silicon oxide, coating photoresist, photoetching according to the positive electrode pattern and the negative electrode pattern, and removing the photoresist;
cleaning the positive electrode pattern and the negative electrode pattern by pre-washing;
evaporating electrode metal on the surface, and then stripping the metal of the parts except the positive electrode pattern and the negative electrode pattern to obtain a positive electrode and a negative electrode with metal coatings;
and carrying out metal annealing.
Preferably, the splitting to obtain a plurality of single-grain LED chips and testing includes:
carrying out wafer test;
grinding and polishing;
cracking along the scribing groove to obtain a split single-grain LED chip;
and carrying out chip test.
The invention has the following beneficial effects:
the invention carries out hot acid corrosion on the scribing groove generated by cutting after carrying out surface cutting, and the adopted hot acid components and action conditions can effectively remove black laser burning marks and can obviously improve the brightness and yield of the chip; according to the invention, the edge of the sub-area obtained after scribing and hot acid corrosion is flattened, and the edge of the LED chip obtained by subsequent splitting is also flattened and cleaned, so that light rays can be better diffused from the inside of the chip; cleaning the positive electrode graph and the negative electrode graph which are etched, and then evaporating a metal layer to further enhance the electrode performance; and the LED chips are split and tested before and after the LED chips are split, so that the production quality of the LED chips is ensured.
Drawings
FIG. 1 is a schematic flow diagram of the present invention;
FIG. 2 is a schematic view of a machined sub-area of the present invention;
reference numerals are as follows: 101-positive electrode, 102-mesa structure, 103-negative electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1-2, the present embodiment provides a method for processing an LED chip, including the following steps:
preprocessing a wafer, and performing surface photoetching to obtain a plurality of mesa structures 102 distributed in an array;
carrying out surface cutting and carrying out hot acid corrosion on a scribing groove generated by cutting to obtain a round crystal with a front surface subjected to scribing, wherein each sub-area on the round crystal with the front surface subjected to scribing comprises a table-board structure 102, and the scribing groove is a boundary between the sub-areas;
processing the wafer subjected to the front surface scribing by photoetching and evaporation so as to obtain a positive electrode 101 and a negative electrode 103 with metal coatings on each subarea;
and splitting according to the sub-regions to obtain a plurality of single-grain LED chips and testing.
In this embodiment, the pre-treatment of the wafer includes a cleaning operation, which is performed to remove surface impurities.
Further, the surface cutting and the hot acid corrosion of the scribing groove generated by the cutting comprise the following steps:
depositing a layer on the surface of the wafer by PECVD process
;
In that
Coating a tangent protective adhesive on the surface of the substrate, and performing laser tangent according to the mesa structure 102;
removing the tangent protective glue after finishing laser tangent;
carrying out hot acid corrosion on the tangent black laser burning mark by using high-temperature hot acid;
removing surfaces of wafers
。
Preferably, the hot acid adopted in the hot acid corrosion is
Solutions and
the mixture of the components of the solution is,
solutions and
the volume ratio of the solution was 3:1.
Further, the
The concentration of the solution may be 95% to 98%, said
The concentration of the solution is not lower than 85%; the temperature of the hot acid corrosion is 220 ℃ to 250 ℃, and the corrosion time is 15 minutes.
In particular, in the present embodiment,
the concentration of the solution is 98%,
the concentration of the solution is 85%, and the temperature of hot acid corrosion is 220 ℃.
In addition, said removing of the surface of the wafer
The method comprises the following steps: the wafer was immersed in a BOE solution bath for 4 minutes, then rinsed and spun dry.
Preferably, the processing the wafer subjected to front surface dicing through photoetching and evaporation comprises the following steps:
presetting a positive electrode pattern and a negative electrode pattern on each subarea;
evaporating an ITO transparent surface film on the surface of the wafer with the front surface scribed, coating a photoresist on the surface of the ITO transparent surface film, wherein the photoresist does not cover the negative electrode pattern;
photoetching the positive electrode pattern to obtain an ITO pattern, wherein the ITO pattern is a circle with a diameter smaller than that of the positive electrode pattern;
etching the uncovered part of the photoresist on the ITO transparent surface film through ITO corrosion, and then removing the photoresist on the surface of the ITO transparent surface film;
performing ITO annealing, wherein the step is to improve the plasticity and toughness of the material, release stress and increase the adhesiveness, light transmittance and ohmic contact;
depositing silicon oxide, wherein the deposited silicon oxide can protect an ITO transparent surface film of the chip, then coating photoresist, photoetching according to the positive electrode pattern and the negative electrode 103 image, and then removing the photoresist;
cleaning the positive electrode pattern and the negative electrode pattern by pre-washing;
evaporating electrode metal on the surface, and then stripping metal from the parts except the positive electrode pattern and the negative electrode pattern to obtain a positive electrode 101 and a negative electrode 103 with metal coatings;
and carrying out metal annealing.
Finally, the splitting to obtain a plurality of single-grain LED chips and performing testing may include:
carrying out wafer test;
grinding and polishing;
cracking is carried out along the scribing groove, and the split single-grain LED chip is obtained;
and carrying out chip test.
According to the LED chip prepared by the method, the COT test effect can be improved by 4.4% compared with that of a stealth sample wafer, and can be improved by 10.6% compared with that of a surface-cutting back-scribing process sample wafer, and the aging performance of the product is stable.
Example 2
The embodiment provides a method for processing an LED chip, which comprises the following steps:
preprocessing a wafer, and performing surface photoetching to obtain a plurality of mesa structures 102 distributed in an array;
carrying out surface cutting and carrying out hot acid corrosion on scribing grooves generated by cutting to obtain a front-surface scribed round crystal, wherein each sub-area on the front-surface scribed round crystal comprises a table-board structure 102, and the scribing grooves are boundaries among the sub-areas;
processing the wafer subjected to front surface scribing by photoetching and evaporation so as to obtain a positive electrode 101 and a negative electrode 103 with metal coatings on each subarea;
and splitting according to the sub-regions to obtain a plurality of single-grain LED chips and testing.
In this embodiment, the pre-processing of the wafer includes performing a cleaning operation.
Further, the surface cutting and the hot acid corrosion of the scribing groove generated by the cutting comprise the following steps:
depositing a layer on the surface of the wafer by PECVD process
;
In that
Coating a tangent protective adhesive on the surface of the substrate, and performing laser tangent according to the mesa structure 102;
removing the tangent protective glue after finishing laser tangent;
carrying out hot acid corrosion on the tangent black laser burning mark by using high-temperature hot acid;
removing the surface of the wafer
。
Preferably, the hot acid adopted in the hot acid corrosion is hot acid
Solutions and
a mixture of the components of the solution is prepared,
solutions and
the volume ratio of the solution was 3:1.
Further, the
The concentration of the solution may be 95% to 98%, said
The concentration of the solution is not lower than 85%; the temperature of the hot acid corrosion is 220-250 ℃, and the corrosion time is 15 minutes.
Specifically, in the present embodiment,
the concentration of the solution is 98%,
the solution concentration is 85%, and the temperature of hot acid corrosion is 240 ℃.
The remaining preferred schemes may be the same as in embodiment 1, and reference may be made to embodiment 1 specifically, which is not described herein again.
According to the LED chip prepared by the method, the COT test effect can be improved by 7.2% compared with that of a hidden cutting sample, and can be improved by 16.1% compared with that of a surface cutting back scribing process sample, and the aging performance of the product is stable.
Example 3
The embodiment provides a method for processing an LED chip, which comprises the following steps:
preprocessing a wafer, and performing surface photoetching to obtain a plurality of mesa structures 102 distributed in an array;
carrying out surface cutting and carrying out hot acid corrosion on scribing grooves generated by cutting to obtain a front-surface scribed round crystal, wherein each sub-area on the front-surface scribed round crystal comprises a table-board structure 102, and the scribing grooves are boundaries among the sub-areas;
processing the wafer subjected to front surface scribing by photoetching and evaporation so as to obtain a positive electrode 101 and a negative electrode 103 with metal coatings on each subarea;
and splitting according to the sub-regions to obtain a plurality of single-grain LED chips and testing.
In this embodiment, the pre-processing of the wafer includes performing a cleaning operation.
Further, the surface cutting and the hot acid corrosion of the scribing groove generated by the cutting comprise the following steps:
depositing a layer on the surface of the wafer by PECVD process
;
In that
Coating a tangent protective adhesive on the surface of the substrate, and performing laser tangent according to the mesa structure 102;
removing the tangent protective glue after finishing laser tangent;
carrying out hot acid corrosion on the tangent black laser burning mark by using high-temperature hot acid;
removing surfaces of wafers
。
Preferably, the hot acid adopted in the hot acid corrosion is
Solutions and
a mixture of the components of the solution is prepared,
solutions and
the volume ratio of the solution was 3:1.
Further, the
The concentration of the solution may be 95% to 98%, said
The concentration of the solution is not lower than 85%; the temperature of the hot acid corrosion is 220 ℃ to 250 ℃, and the corrosion time is 15 minutes.
In particular, in the present embodiment,
the concentration of the solution is 98%,
the solution concentration is 85%, and the temperature of hot acid corrosion is 250 ℃.
The remaining preferred embodiments may be the same as embodiment 1, and reference may be made to embodiment 1 specifically, and details are not repeated herein.
According to the LED chip prepared by the method of the embodiment, the COT test effect can be improved by 7.9% compared with that of a stealth sample, and can be improved by 17.2% compared with that of a surface-cutting back-scribing process sample, and the aging performance of the product is stable.
Claims (9)
1. A processing method of an LED chip is characterized by comprising the following steps:
preprocessing a wafer, and then carrying out surface photoetching to obtain a plurality of mesa structures (102) distributed in an array;
carrying out surface cutting and carrying out hot acid corrosion on a scribing groove generated by cutting to obtain a round crystal with a front surface subjected to scribing, wherein each sub-area on the round crystal with the front surface subjected to scribing comprises a table-board structure (102), and the scribing groove is a boundary between the sub-areas;
processing the wafer subjected to the front surface scribing by photoetching and evaporation so as to obtain a positive electrode (101) and a negative electrode (103) with metal coatings on each subarea;
and splitting according to the sub-regions to obtain a plurality of single-grain LED chips and testing.
2. The method of claim 1, wherein the pre-treating the wafer comprises performing a cleaning operation.
3. The LED chip processing method of claim 1, wherein the steps of performing surface cutting and performing hot acid etching on the scribe line generated by the cutting comprise:
depositing a layer on the surface of the wafer by PECVD process
;
In that
Coating a tangent protective adhesive on the surface of the substrate, and performing laser tangent according to the mesa structure (102);
removing the tangent protective adhesive after finishing laser tangent;
carrying out hot acid corrosion on the tangent black laser burning mark by using high-temperature hot acid;
removing the surface of the wafer
。
4. The method as claimed in claim 3, wherein the hot acid used in the hot acid etching is hot acid
Solutions and
the mixture of the components of the solution is,
solutions and
the volume ratio of the solution was 3:1.
5. The method as claimed in claim 4, wherein the LED chip is processed by a hot press
The concentration of the solution is 95-98 percent, and the solution is prepared by mixing the raw materials
The concentration of the solution is not less than 85%.
6. The method as claimed in claim 5, wherein the temperature of the hot acid etching is 220-250 ℃, and the etching time is 15 minutes.
7. The method as claimed in claim 3, wherein the surface of the wafer is removed
The method comprises the following steps: the wafer was immersed in the BOE solution bath for 4 minutes, then rinsed and spun dry.
8. The LED chip processing method of claim 1, wherein the processing of the front-side diced wafer by photolithography and evaporation comprises the steps of:
presetting a positive electrode pattern and a negative electrode pattern on each subarea;
evaporating an ITO transparent surface film on the surface of the wafer with the front surface scribed, coating a photoresist on the surface of the ITO transparent surface film, wherein the photoresist does not cover the negative electrode pattern;
photoetching the positive electrode pattern to obtain an ITO pattern, wherein the ITO pattern is a circle with a diameter smaller than that of the positive electrode pattern;
removing uncovered parts of the photoresist on the ITO transparent surface film through ITO corrosion, and then removing the photoresist on the surface of the ITO transparent surface film;
carrying out ITO annealing;
depositing silicon oxide, coating photoresist, photoetching according to the positive electrode pattern and the negative electrode pattern, and removing the photoresist;
cleaning the positive electrode pattern and the negative electrode pattern through precleaning;
evaporating electrode metal on the surface, and then stripping the metal of the parts except the positive electrode pattern and the negative electrode pattern to obtain a positive electrode (101) and a negative electrode (103) with metal coatings;
and carrying out metal annealing.
9. The LED chip processing method according to claim 1, wherein the splitting according to sub-regions to obtain a plurality of single-grain LED chips and testing comprises:
carrying out wafer test;
grinding and polishing;
cracking along the scribing groove to obtain a split single-grain LED chip;
and carrying out chip test.
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| CN202210714742.5A CN114792748A (en) | 2022-06-23 | 2022-06-23 | LED chip processing method |
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2022
- 2022-06-23 CN CN202210714742.5A patent/CN114792748A/en active Pending
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