CN114792724A - Reverse conducting IGBT capable of eliminating voltage folding phenomenon - Google Patents
Reverse conducting IGBT capable of eliminating voltage folding phenomenon Download PDFInfo
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- CN114792724A CN114792724A CN202210480121.5A CN202210480121A CN114792724A CN 114792724 A CN114792724 A CN 114792724A CN 202210480121 A CN202210480121 A CN 202210480121A CN 114792724 A CN114792724 A CN 114792724A
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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Abstract
The invention discloses a reverse conducting IGBT (insulated gate bipolar translator) for eliminating a voltage folding phenomenon, which comprises a half-cell structure, wherein the half-cell structure comprises a collector structure, a voltage-withstanding layer structure emitter structure and a grid structure; the collector structure is positioned at one end of the voltage-withstanding layer structure, and the emitter structure and the grid structure are positioned at two sides of the other end of the voltage-withstanding layer structure; the collector structure comprises a P + collector region, an N-type buffer layer, a P + conductive material, collector metal, an N-type conductive material and floating metal; one side of the N-type buffer layer is connected to the voltage-withstanding layer structure, one sides of the P + collector region and the N + collector region are respectively connected to the other side of the N-type buffer layer, a gap is formed between the P + collector region and the N + collector region, and collector metal is arranged on the other side of the P + collector region; according to the invention, a snapback phenomenon is eliminated through optimization and improvement of a collector structure on the basis of a conventional reverse conducting IGBT structure, and reverse conducting current is more uniform.
Description
Technical Field
The invention relates to the technical field of power semiconductors, in particular to a reverse conducting IGBT (insulated gate bipolar transistor) for eliminating a voltage retracing phenomenon.
Background
As shown in fig. 3-4, in the conventional reverse conducting IGBT structure and the schematic diagram of the equivalent circuit, when the conventional reverse conducting IGBT is turned on in the forward direction, the N + collector region (12) is turned on first, and at this time, the device operates in the unipolar conducting mode, the on-resistance is large, because the N-type buffer layer (13) has a parasitic resistance, the anode current will generate a voltage drop on the parasitic resistance with the increase of the anode voltage, when the voltage drop and the potential difference of the P + collector region (11) are greater than 0.7V, the PN junction of the P + collector region (13)/the N-type buffer layer (13) is turned on, the device enters the bipolar conducting mode, the on-resistance is low, and the rapid decrease of the on-resistance will cause a voltage folding back phenomenon, in order to alleviate the phenomenon, the length of the P + collector region (11) of the conventional reverse conducting IGBT is often designed to be long, but this will cause the length of the N + shorter collector region (12) to be relatively, when the reverse conducting type IGBT device is conducted reversely, the P + body contact region (33), the P type well region (31), the N type drift region (21), the N type buffer layer (13) and the N + collector region (12) form diode conducting current, and at the moment, if the length of the N + collector region (12) is short, the reverse conducting current is unevenly distributed, and the device performance and the system reliability are further influenced.
Disclosure of Invention
The invention provides a reverse conducting IGBT for eliminating voltage folding phenomenon, which eliminates the voltage folding phenomenon due to the introduction of a collector side P-N diode, so that the length ratio of a P + collector region (11) to an N + collector region (12) can be smaller, and the current is more uniform when the device is conducted reversely.
The invention is realized by the following technical scheme:
the reverse conducting IGBT comprises a half-cell structure, wherein the half-cell structure comprises a collector structure, a voltage-withstanding layer structure emitter structure and a grid structure; the collector structure is positioned at one end of the voltage-withstanding layer structure, and the emitter structure and the grid structure are positioned at two sides of the other end of the voltage-withstanding layer structure;
the collector structure comprises a P + collector region, an N-type buffer layer, a P-type conductive material, collector metal, an N-type conductive material and floating metal;
one side of the N-type buffer layer is connected to the voltage-withstanding layer structure, one sides of the P + collector region and the N + collector region are respectively connected to the other side of the N-type buffer layer, a gap is formed between the P + collector region and the N + collector region, collector metal is arranged on the other side of the P + collector region, a collector is led out of the collector metal, the floating metal is connected to the other side of the N + collector region, and the collector metal and the floating metal are not in contact with each other;
the P-type conducting material is arranged in the gap and connected to the floating metal, and the side edge of the P-type conducting material is spaced from the P + collector region, the N + collector region and the N-type buffer layer;
the N-type conductive material is connected on the P-type conductive material, and one side of the N-type conductive material is connected with a collector metal.
Specifically, the emitter structure comprises a P-type well region, an N + emitter region, a P + body contact region and emitter metal;
one side of the P-type well region is connected to the voltage-resisting layer structure, the N + emitter region and the P + body contact region are in contact with each other, and one side of the N + emitter region and one side of the P + body contact region are both connected to the other side of the P-type well region;
and one side of the emitter metal leads out an emitter, and the other side of the emitter metal is simultaneously connected to the N + emitter region and the P + body contact region.
Specifically, the gate structure comprises a trench gate, the trench gate is composed of a second insulating medium layer, a conductive material layer and a gate metal, the conductive material layer is arranged in the second insulating medium layer, and the gate metal is arranged on the conductive material layer and leads out a gate.
Specifically, one side of the second insulating medium layer vertically penetrates through the P-type well region and is in contact with the P-type well region and the N + type emitter region.
Specifically, the voltage-resistant layer structure comprises an N-type drift region; and the N-type drift region is in contact with the second insulating medium layer and the P-type well region.
Preferably, an insulating medium layer is arranged in a gap between the P + collector region and the N + collector region, and the P-type conducting material is connected on the insulating medium layer.
Preferably, one side of the insulating medium layer is extended and attached to the N-type buffer layer.
Compared with the prior art, the invention has the following advantages and beneficial effects:
according to the invention, a snapback phenomenon is eliminated through optimization and improvement of a collector structure on the basis of a conventional reverse conducting IGBT structure, and reverse conducting current is more uniform.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention.
FIG. 1 is a schematic structural diagram of a reverse conducting IGBT according to the present invention;
FIG. 2 is a schematic diagram of an equivalent circuit of a reverse conducting IGBT of the invention;
FIG. 3 is a schematic diagram of a conventional reverse conducting IGBT structure;
fig. 4 is a schematic diagram of an equivalent circuit of a conventional reverse conducting IGBT.
Description of the reference numerals:
11. p + collector region, 12, N + collector region, 13, N-type buffer layer, 14, first insulating dielectric layer, 15, P-type conductive material, 16, collector metal, 17, N-type conductive material, 18, floating metal, 21, N-type drift region, 31, P-type well region, 32, N + emitter region, 33, P + body contact region, 34, emitter metal, 41, second insulating dielectric layer, 42, conductive material layer, 43, gate metal, C, collector, E, emitter, G, gate.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Example 1:
the reverse conducting type IGBT for eliminating the voltage folding phenomenon as shown in the figure 1-2 comprises a half-cell structure, wherein the half-cell structure comprises a collector structure, a voltage-withstanding layer structure, an emitter structure and a grid structure; the collector structure is located at one end of the voltage-withstanding layer structure, and the emitter structure and the gate structure are located at two sides of the other end of the voltage-withstanding layer structure, which are taken as the prior art and are not described herein in too much detail;
the collector structure comprises a P + collector region 11, an N + collector region 12, an N type buffer layer 13, a P type conductive material 15, a collector metal 16, an N type conductive material 17 and a floating metal 18;
one side of the N-type buffer layer 13 is connected to the voltage-withstanding layer structure, one sides of the P + collector region 11 and the N + collector region 12 are respectively connected to the other side of the N-type buffer layer 13, a gap is formed between the P + collector region 11 and the N + collector region 12, collector metal 16 is arranged on the other side of the P + collector region 11, a collector C is led out of the collector metal 16, the floating metal 18 is connected to the other side of the N + collector region 12, and the collector metal 16 is not in contact with the floating metal 18;
the P-type conducting material 15 is arranged in the gap and connected to the floating metal 18, and the side edge of the P-type conducting material 15 is spaced from the P + collector region 11, the N + collector region 12 and the N-type buffer layer 13;
an N-type conductive material 17 is connected on the P-type conductive material 15 and one side thereof is connected with a collector metal 16;
specifically, the emitter structure includes a P-type well region 31, an N + emitter region 32, a P + body contact region 33, and an emitter metal 34;
one side of the P-type well region 31 is connected to the withstand voltage layer structure, the N + emitter region 32 and the P + body contact region 33 are in contact with each other, and one sides of the N + emitter region 32 and the P + body contact region 33 are connected to the other side of the P-type well region 31;
one side of the emitter metal 34 leads out the emitter E, and the other side is simultaneously connected to the N + emitter region 32 and the P + body contact region 33;
the grid structure comprises a trench grid, the trench grid is composed of a second insulating medium layer 41, a conductive material layer 42 and grid metal 43, the conductive material layer 42 is arranged in the second insulating medium layer 41, the grid metal 43 is arranged on the conductive material layer 42, and a grid G is led out; one side of the second insulating dielectric layer 41 vertically penetrates through the P-type well region 31 and contacts the P-type well region 31 and the N + -type emitter region 32;
the voltage-resistant layer structure comprises an N-type drift region 21; the N-type drift region 21 is in contact with the first insulating medium 41 and the P-type well region 31;
according to the invention, the collector metal 16, the floating metal 18, the P-type conducting material 15 and the N-type conducting material 17 form a P-N diode, when the device is conducted in the forward direction, the P-N diode is reversely biased, and when the device is conducted in the reverse direction, the P-N diode is forwardly biased, so that the voltage folding phenomenon is eliminated, therefore, the length ratio of the P + collector region 11 to the N + collector region 12 can be smaller, and the current of the device is more uniform when the device is conducted in the reverse direction, and the specific working principle is as follows;
when conducting in the forward direction: the grid G is connected with positive voltage, the collector C is connected with positive voltage, the emitter E is grounded, the voltage on the grid G enables a channel to be opened, electrons are injected into the N-type drift region 21, and due to the fact that a reverse-biased P-N diode is arranged between the N + collector region 12 and the collector C, the N + collector region 12 is not conducted when the device is conducted in the forward direction, only the P + collector region 11 is conducted, therefore, the device directly enters a bipolar conduction mode when the device is conducted in the forward direction, and the voltage folding phenomenon caused by sudden change of resistance of the drift region due to the fact that the device is conducted from single pole to double pole does not exist;
when the device is reversely conducted, the grid G is grounded, the emitter E is grounded, the collector C is connected with negative voltage, the P + body contact region 33, the P-type trap region 31, the N-type drift region 21, the N-type buffer layer 13 and the diode formed by the N + collector region 12 are connected with the P-N diode in series, and the device can realize the function of reversely conducting current.
Example 2:
on the basis of embodiment 1, further, a first insulating medium layer 14 is provided in the gap between the P + collector region 11 and the N + collector region 12, and a P-type conductive material 15 is connected on the first insulating medium layer 14.
Preferably, one side of the first insulating dielectric layer 14 is extended and attached on the N-type buffer layer 13.
The above-mentioned embodiments, objects, technical solutions and advantages of the present invention are further described in detail, it should be understood that the above-mentioned embodiments are only examples of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. A reverse conducting IGBT for eliminating a voltage retracement phenomenon comprises a half-cell structure, wherein the half-cell structure comprises a collector structure, a voltage-withstanding layer structure emitter structure and a grid structure; the collector structure is positioned at one end of the voltage-withstanding layer structure, and the emitter structure and the grid structure are positioned at two sides of the other end of the voltage-withstanding layer structure, and the collector structure is characterized by comprising a P + collector region (11), an N + collector region (12), an N-type buffer layer (13), a P-type conductive material (15), a collector metal (16), an N-type conductive material (17) and a floating metal (18);
one side of the N-type buffer layer (13) is connected to the voltage-resistant layer structure, one sides of the P + collector region (11) and the N + collector region (12) are respectively connected to the other side of the N-type buffer layer (13), a gap is formed between the P + collector region (11) and the N + collector region (12), collector metal (16) is arranged on the other side of the P + collector region (11), a collector (C) is led out of the collector metal (16), the floating metal (18) is connected to the other side of the N + collector region (12), and the collector metal (16) and the floating metal (18) are not in contact with each other;
the P-type conducting material (15) is arranged in the gap and connected to the floating metal (18), and the side edge of the P-type conducting material (15) is spaced from the P + collector region (11), the N + collector region (12) and the N-type buffer layer (13);
the N-type conductive material (17) is connected on the P-type conductive material (15) and one side of the N-type conductive material is connected with a collector metal (16).
2. The IGBT according to claim 1, wherein a first insulating medium layer (14) is provided in the gap between the P + collector region (11) and the N + collector region (12), and the P-type conductive material (15) is connected to the first insulating medium layer (14).
3. The reverse conducting IGBT according to claim 2, wherein one side of the first dielectric layer (14) is extended and attached to the N-type buffer layer (13).
4. The reverse conducting IGBT according to claim 3, wherein the emitter structure comprises a P-type well region (31), an N + emitter region (32), a P + body contact region (33), and an emitter metal (34);
one side of the P-type well region (31) is connected to the voltage-withstanding layer structure, the N + emitter region (32) and the P + body contact region (33) are in contact with each other, and one side of the N + emitter region (32) and one side of the P + body contact region (33) are both connected to the other side of the P-type well region (31);
one side of the emitter metal (34) leads out an emitter (E), and the other side is simultaneously connected to the N + emitter region (32) and the P + body contact region (33).
5. The reverse conducting IGBT for eliminating the voltage foldback phenomenon according to claim 4, wherein the gate structure comprises a trench gate, the trench gate is composed of a second insulating dielectric layer (41), a conductive material layer (42) and a gate metal (43), the conductive material layer (42) is disposed in the second insulating dielectric layer (41), the gate metal (43) is disposed on the conductive material layer (42), and a gate (G) is led out.
6. The IGBT of claim 5, wherein one side of said second dielectric layer (41) extends vertically through said P-well region (31) and contacts said P-well region (31) and said N + emitter region (32).
7. The reverse conducting IGBT for eliminating voltage foldback phenomenon as claimed in claim 6, characterized in that said voltage-withstanding layer structure comprises an N-type drift region (21); the N-type drift region (21) is in contact with the second insulating medium layer (41) and the P-type well region (31).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210480121.5A CN114792724A (en) | 2022-05-05 | 2022-05-05 | Reverse conducting IGBT capable of eliminating voltage folding phenomenon |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210480121.5A CN114792724A (en) | 2022-05-05 | 2022-05-05 | Reverse conducting IGBT capable of eliminating voltage folding phenomenon |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117766390A (en) * | 2024-02-22 | 2024-03-26 | 南京华瑞微集成电路有限公司 | RC-IGBT with self-bias structure and manufacturing method thereof |
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- 2022-05-05 CN CN202210480121.5A patent/CN114792724A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117766390A (en) * | 2024-02-22 | 2024-03-26 | 南京华瑞微集成电路有限公司 | RC-IGBT with self-bias structure and manufacturing method thereof |
| CN117766390B (en) * | 2024-02-22 | 2024-05-10 | 南京华瑞微集成电路有限公司 | RC-IGBT with self-bias structure and manufacturing method thereof |
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