CN114785314A - Quartz crystal resonator with low acceleration sensitivity - Google Patents
Quartz crystal resonator with low acceleration sensitivity Download PDFInfo
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- CN114785314A CN114785314A CN202210707890.4A CN202210707890A CN114785314A CN 114785314 A CN114785314 A CN 114785314A CN 202210707890 A CN202210707890 A CN 202210707890A CN 114785314 A CN114785314 A CN 114785314A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 239000010453 quartz Substances 0.000 title claims abstract description 76
- 239000013078 crystal Substances 0.000 title claims abstract description 60
- 230000001133 acceleration Effects 0.000 title claims abstract description 15
- 230000035945 sensitivity Effects 0.000 title claims abstract description 14
- 235000012431 wafers Nutrition 0.000 claims abstract description 93
- 239000000919 ceramic Substances 0.000 claims abstract description 50
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 26
- 238000007789 sealing Methods 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 2
- 238000005457 optimization Methods 0.000 abstract description 3
- 239000003292 glue Substances 0.000 description 12
- 230000007613 environmental effect Effects 0.000 description 11
- 230000010355 oscillation Effects 0.000 description 5
- 238000013016 damping Methods 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a quartz crystal resonator with low acceleration sensitivity, which comprises a ceramic base, an upper cavity and a lower cavity, wherein the upper cavity and the lower cavity are arranged on the upper end surface and the lower end surface of the ceramic base; the mounting direction of one of the two electrode-plated cristobalite wafers mounted in the upper cavity of the ceramic base is obtained by rotating the other cristobalite wafer by 180 degrees along the X-axis direction, and the mounting directions of the cristobalite wafers mounted in the upper cavity and the lower cavity of the ceramic base are mutually symmetrical in the Z-axis direction. The quartz crystal resonator can realize the optimization of the vibration phase noise of the vibration circuit under the environment vibration condition of X, Y, Z axes in three directions. Meanwhile, the volume of the quartz crystal resonator is reduced, and the cost is reduced.
Description
Technical Field
The invention belongs to the technical field of piezoelectric crystals, and particularly relates to a quartz crystal resonator with low acceleration sensitivity.
Background
The quartz crystal resonator is an electronic component widely applied in modern electronic equipment, and is generally connected with an oscillating circuit to generate a stable frequency signal so as to provide a time reference for the electronic equipment. The quartz crystal resonator generates oscillation frequency based on the inverse piezoelectric effect of the quartz crystal, and the quartz crystal is a material easily influenced by the environment, so that the performance of the quartz crystal resonator is influenced by severe use environments (such as vibration, impact, acceleration and the like) to cause index deterioration. The acceleration sensitivity of the quartz crystal resonator is a key index of the quartz crystal resonator in a vibration environment, and reflects the influence degree of environmental vibration on the frequency of the quartz crystal resonator. The smaller the acceleration sensitivity index of the quartz crystal resonator is, the smaller the frequency change of the quartz crystal resonator under the vibration condition is, so that the oscillation circuit obtains a better vibration phase noise index.
In practical use, in order to obtain a better vibration phase noise index, the conventional solution generally adopts a digital circuit to compensate the frequency change of a quartz crystal resonator under vibration, or adopts a physical vibration damping (such as spring vibration damping, steel wire vibration damping, etc.). The conventional solution requires a complicated circuit structure or a complicated physical structure, which not only increases the volume, power consumption and cost of the product, but also reduces the reliability of the product. The latest solution is usually in the form of a double quartz crystal resonator, where two quartz crystal resonators are placed in the same direction, and one of them is rotated 180 ° along the X-axis, so as to cancel out the change of oscillation frequency under vibration conditions. By the mode, the oscillation circuit can realize better vibration phase noise indexes under the environmental vibration conditions in the X-axis direction and the Y-axis direction, but the two quartz crystal resonators cannot realize frequency change compensation in the Z-axis direction, and the vibration phase noise indexes of the oscillation circuit under the environmental vibration conditions cannot be optimized. If the frequency variation compensation under X, Y, Z three axial environmental vibration conditions is satisfied, it has to be considered to use four quartz crystal resonators to realize the frequency variation compensation, which is not only disadvantageous to the low cost and miniaturization design of electronic equipment, but also cannot guarantee the consistency during use, and the final index has a larger discrete type.
Disclosure of Invention
The invention aims to provide a quartz crystal resonator with low acceleration sensitivity, which mainly solves the problems of complex circuit structure or physical structure, large product volume, high power consumption and high cost of the quartz crystal resonator in the traditional physical vibration reduction mode.
In order to realize the purpose, the technical scheme adopted by the invention is as follows:
a quartz crystal resonator with low acceleration sensitivity comprises a ceramic base, an upper cavity and a lower cavity, two wafer mounting positions, four quartz wafers, an upper metal cover plate and a lower metal cover plate, wherein the upper cavity and the lower cavity are arranged on the upper end surface and the lower end surface of the ceramic base; the mounting direction of one of the two cristobalite wafers plated with the electrodes and mounted in the upper cavity of the ceramic base is obtained by rotating the other cristobalite wafer by 180 degrees along the X-axis direction, and the mounting directions of the cristobalite wafers mounted in the upper cavity and the lower cavity of the ceramic base are mutually symmetrical in the Z-axis direction; the direction perpendicular to the crystal resonator is defined as the Z-axis direction, the long-side direction of the crystal resonator is the Y-axis direction, and the wide-side direction of the crystal resonator is the X-axis direction.
Further, in the invention, two dispensing platforms are arranged on one side in the wafer mounting position, and a supporting platform is arranged on the opposite side of the two dispensing platforms; one side of the quartz square wafer with the electrode leading-out end is connected on the dispensing platform through conductive adhesive, and the other side of the quartz square wafer is placed on the supporting platform.
Furthermore, the invention also comprises a resonator left leading-out end and a resonator right leading-out end which are arranged at two ends of the bottom surface of the ceramic base; the resonator left leading-out end is connected with a dispensing platform in the upper cavity or the lower cavity close to one side of the resonator left leading-out end through wiring in the ceramic base; and the resonator right leading-out end is connected with a dispensing platform in the lower cavity or the upper cavity close to one side of the resonator right leading-out end through wiring in the ceramic base.
Further, in the invention, the periphery of the cavity end faces of the upper cavity and the lower cavity is correspondingly provided with an upper sealing ring and a lower sealing ring; the upper metal cover plate and the lower metal cover plate are welded on the corresponding upper sealing ring and the lower sealing ring through a parallel seal welding process.
Further, in the invention, the external dimension, frequency, cut type and cut angle of the four quartz wafers are all designed to be the same, and the materials used by the electrodes are all the same.
Compared with the prior art, the invention has the following beneficial effects:
(1) two of the four electrode-plated quartz crystal wafers are arranged in the upper cavity of the ceramic base, the other two electrodes are arranged in the lower cavity of the ceramic base, the mounting directions of the quartz crystal wafers in the upper cavity and the lower cavity are symmetrical relative to the Z axis, and the mounting mode can counteract the influence of the environmental vibration in the Z axis direction on the frequency of the quartz crystal resonator. Two electrode-plated cristobalite wafers mounted in a single cavity of a ceramic susceptor, wherein one electrode-plated cristobalite wafer is mounted in a direction 180 DEG from the X axis with respect to the other electrode-plated cristobalite wafer, and the mounting is performed in such a manner that the influence of X, Y axial environmental vibration on the frequency of a quartz crystal resonator can be cancelled, thereby optimizing the vibration phase noise of a vibration circuit under the condition of X, Y, Z axial environmental vibration.
(2) According to the quartz crystal resonator, the four quartz crystal wafers plated with the electrodes are arranged in the ceramic base, so that the volume of the quartz crystal resonator is further reduced, and the cost is reduced. And the square quartz crystal wafer with the electrodes plated inside adopts the same external dimension, white chip frequency, cut type and cut angle design, so that the frequency change compensation of the quartz crystal resonator under the environmental vibration is realized, and the index consistency of the quartz crystal resonator is further improved.
Drawings
Fig. 1 is a schematic diagram of an explosive structure of the present invention.
Fig. 2 is an exploded view of another aspect of the present invention.
Fig. 3 is a schematic view of the internal structure of the upper chamber of the present invention.
Fig. 4 is a schematic view of the internal structure of the lower chamber of the present invention.
Fig. 5 is a schematic cross-sectional structure of the present invention.
Wherein, the names corresponding to the reference numbers are:
1-a ceramic base, 2-an upper cavity, 3-a lower cavity, 4-a wafer mounting position, 4 a-a first wafer mounting position, 4 b-a second wafer mounting position, 4 c-a third wafer mounting position, 4 d-a fourth wafer mounting position, 5-a square quartz wafer, 5 a-a first square quartz wafer, 5 b-a second square quartz wafer, 5 c-a third quartz wafer, 5 d-a fourth quartz wafer, 6-an upper metal cover plate, 7-a lower metal cover plate, 8-a dispensing platform, 8 a-a first dispensing platform, 8 b-a second dispensing platform, 8 c-a third dispensing platform, 8 d-a fourth dispensing platform, 8 e-a fifth dispensing platform, 8 f-a sixth dispensing platform, 8 g-a seventh dispensing platform, 8 h-eighth dispensing platform, 9-supporting platform, 9 a-first supporting platform, 9 b-second supporting platform, 9 c-third supporting platform, 9 d-fourth supporting platform, 10-resonator left leading-out end, 11-resonator right leading-out end, 12-upper sealing ring and 13-lower sealing ring.
Detailed Description
The present invention will be further described with reference to the following description and examples, which include but are not limited to the following examples.
Examples
As shown in fig. 1 to 5, the quartz crystal resonator with low acceleration sensitivity disclosed in the present invention includes a ceramic base 1, an upper cavity 2 and a lower cavity 3 disposed on the upper and lower end surfaces of the ceramic base 1, two wafer mounting locations 4 disposed in the upper cavity 2 and the lower cavity 3, four electrode-plated quartz wafers 5 correspondingly mounted in the wafer mounting locations 4, and an upper metal cover plate 6 and a lower metal cover plate 7 for encapsulating the upper cavity 2 and the lower cavity 3. The quartz crystal wafer and the ceramic base in the quartz crystal resonator adopt an integrated packaging structure, and the size after packaging is 8mm multiplied by 4.5mm multiplied by 2.5 mm.
As shown in fig. 1, first, a direction perpendicular to the crystal resonator is defined as a Z-axis direction, a long-side direction of the crystal resonator is defined as a Y-axis direction, and a wide-side direction of the crystal resonator is defined as an X-axis direction. Among two electrode-plated cristobalite wafers mounted in an upper cavity of a ceramic base 1, the mounting direction of one cristobalite wafer is obtained by rotating the other cristobalite wafer by 180 degrees in the direction of an X axis, and the mounting directions of the cristobalite wafers mounted in an upper cavity 2 and a lower cavity 3 of the ceramic base 1 are mutually symmetrical in the direction of a Z axis. Therefore, two of the four electrode-plated quartz crystal wafers are arranged in the upper cavity of the ceramic base, the other two electrodes are arranged in the lower cavity of the ceramic base, the mounting directions of the quartz crystal wafers in the upper cavity and the lower cavity are symmetrical relative to the Z axis, and the mounting mode can offset the influence of the environmental vibration in the Z axis direction on the frequency of the quartz crystal resonator. Two electrode-plated cristobalite wafers mounted in a single cavity of a ceramic base, wherein the mounting direction of one electrode-plated cristobalite wafer is obtained by rotating the mounting direction of the other electrode-plated cristobalite wafer by 180 degrees along the X axis, and the mounting mode can counteract the influence of X, Y axial direction environmental vibration on the frequency of a quartz crystal resonator, thereby realizing the optimization of vibration phase noise of a vibration circuit under the condition of X, Y, Z axial three-direction environmental vibration.
Among them, the four electrode-plated cristobalite wafers 5 are referred to as a first quartz wafer 5a, a second quartz wafer 5b, a third quartz wafer 5c and a fourth quartz wafer 5d, respectively. The first quartz wafer 5a and the second quartz wafer 5b are installed in the upper chamber 2 of the ceramic susceptor 1, and the third quartz wafer 5c and the fourth quartz wafer 5d are installed in the lower chamber 3 of the ceramic susceptor 1. The external dimension, frequency, cutting type and cutting angle of the four cristobalite wafers are all the same, and the electrodes are made of Au.
Four wafer mounting sites 4 in the ceramic base 1 are designated as a first wafer mounting site 4a, a second wafer mounting site 4b, a third wafer mounting site 4c and a fourth wafer mounting site 4 d; the total of 8 glue dispensing platforms 8 arranged in the four wafer mounting positions 4 are marked as a first glue dispensing platform 8a, a second glue dispensing platform 8b, a third glue dispensing platform 8c, a fourth glue dispensing platform 8d, a fifth glue dispensing platform 8e, a sixth glue dispensing platform 8f, a seventh glue dispensing platform 8g and an eighth glue dispensing platform 8 h; the support stages 9 provided in the four wafer mounting positions 4 are collectively denoted as a first support stage 9a, a second support stage 9b, a third support stage 9c, and a fourth support stage 9 d.
As shown in fig. 3, the first quartz wafer 5a is mounted on the first wafer mounting location 4a inside the upper chamber 2, one side of the first quartz wafer 5a having the electrode terminals is bonded to the first dispensing table 8a and the second dispensing table 8b of the first wafer mounting location 4a by conductive adhesive, and the side of the first quartz wafer 5a having no electrode terminals is placed on the first supporting table 9 a.
As shown in fig. 3, since the mounting direction of one of the two electrode-plated cristobalite wafers mounted in the upper chamber of the ceramic susceptor 1 is obtained by rotating the cristobalite wafer by 180 ° in the X-axis direction, the third dispensing platform 8c and the fourth dispensing platform 8d are positioned on the same straight line as the first supporting platform 9a, and the second supporting platform 9b is positioned on the same straight line as the first dispensing platform 8a and the second dispensing platform 8b at the second wafer mounting position 4 b. One side of the second cristobalite wafer 5b having the electrode terminals is bonded to the third spot gluing stage 8c and the fourth spot gluing stage 8d of the second wafer mounting site 4b by means of conductive glue, and the side of the second cristobalite wafer 5b having no electrode terminals is placed on the second support stage 9 b.
Similarly, the third quartz wafer 5c and the fourth quartz wafer 5d in the lower chamber 3 are mounted in such a manner that they are symmetrical to each other in the upper chamber along the Z-axis in the mounting direction.
As shown in fig. 3, the first adhesive dispensing platform 8a of the first wafer mounting site 4a and the third adhesive dispensing platform 8c of the second wafer mounting site 4b of the ceramic base 1 are connected by routing inside the base; the second glue dispensing platform 8b of the first wafer mounting position 4a and the fourth glue dispensing platform 8d of the second wafer mounting position 4b of the ceramic base 1 are connected through wiring inside the base.
As shown in fig. 4, the fifth dispensing platform 8e of the third wafer mounting position 4c of the ceramic base 1 is connected to the seventh dispensing platform 8g of the fourth wafer mounting position 4d by routing inside the base; the sixth dispensing platform 8f of the third chip mounting location 4c and the eighth dispensing platform 8h of the fourth chip mounting location 4d of the ceramic base 1 are connected by routing inside the base.
Referring to fig. 3 and 4, the first dispensing platform 8a of the first wafer mounting location 4a and the fifth dispensing platform 8e of the third wafer mounting location 4c in the cavity of the ceramic base 1 are connected by the inner wires of the base, and the fourth dispensing platform 8d of the second wafer mounting location 4b and the eighth dispensing platform 8h of the fourth wafer mounting location 4d of the ceramic base 1 are connected by the inner wires of the base.
As shown in fig. 3, in the present embodiment, the upper metal cover 6 is welded to the upper sealing ring 12 of the ceramic base 1 by a parallel sealing process, and the lower metal cover 7 is welded to the lower sealing ring 13 of the ceramic base by a parallel sealing process.
In the invention, the resonator also comprises a resonator left leading-out end 10 and a resonator right leading-out end 11 which are arranged at two ends of the bottom surface of the ceramic base 1; the resonator left leading-out end is connected with a dispensing platform in an upper cavity or a lower cavity close to one side of the resonator left leading-out end through wiring in the ceramic base 1; and the resonator right leading-out end is connected with a dispensing platform in the lower cavity or the upper cavity close to one side of the resonator right leading-out end through wiring in the ceramic base. Namely, when the resonator left leading-out end 10 is connected with the dispensing platform of the upper cavity close to one side of the resonator left leading-out end, the resonator right leading-out end is connected with the dispensing platform of the lower cavity close to one side of the resonator right leading-out end through wiring inside the ceramic base. When the resonator left leading-out end 10 is connected with the dispensing platform of the lower cavity close to one side of the resonator left leading-out end, the resonator right leading-out end is connected with the dispensing platform of the upper cavity close to one side of the resonator right leading-out end through the internal wiring of the ceramic base. In the 3D schematic diagram of the resonator (bottom surface) shown in fig. 5, the resonator left lead-out terminal 10 and the first dispensing platform 8a, the resonator right lead-out terminal 11 and the eighth dispensing platform 8h are respectively connected through a wire inside the ceramic base 1.
Through the design, the quartz crystal resonator can realize the optimization of the vibration phase noise of the vibration circuit under the environment vibration condition of X, Y, Z axis three directions. Meanwhile, four quartz crystal wafers plated with electrodes are arranged in one ceramic base, so that the volume of the quartz crystal resonator is further reduced, and the cost is reduced. Therefore, the method has high use value and popularization value.
The above-mentioned embodiment is only one of the preferred embodiments of the present invention, and should not be used to limit the scope of the present invention, but all the insubstantial modifications or changes made within the spirit and scope of the main design of the present invention, which still solve the technical problems consistent with the present invention, should be included in the scope of the present invention.
Claims (5)
1. A quartz crystal resonator with low acceleration sensitivity is characterized by comprising a ceramic base (1), an upper cavity (2) and a lower cavity (3) which are arranged on the upper end surface and the lower end surface of the ceramic base (1), two wafer mounting positions (4) which are arranged in the upper cavity (2) and the lower cavity (3), four square quartz wafers (5) which are correspondingly arranged in the wafer mounting positions (4) and plated with electrodes, and an upper metal cover plate (6) and a lower metal cover plate (7) which are used for packaging the upper cavity (2) and the lower cavity (3); two electrode-plated cristobalite wafers (5) which are arranged in an upper cavity of a ceramic base (1), wherein the mounting direction of one cristobalite wafer (5) is obtained by rotating the other cristobalite wafer (5) for 180 degrees along the X-axis direction, and the mounting directions of the cristobalite wafers (5) arranged in the upper cavity (2) and the lower cavity (3) of the ceramic base (1) are mutually symmetrical in the Z-axis direction; the direction perpendicular to the crystal resonator is defined as the Z-axis direction, the long-side direction of the crystal resonator is the Y-axis direction, and the wide-side direction of the crystal resonator is the X-axis direction.
2. A low acceleration sensitivity quartz crystal resonator as claimed in claim 1, characterized in that two dispensing platforms (8) are arranged on one side in the chip mounting location (4), and a support platform (9) is arranged on the opposite side of the two dispensing platforms (8); one side of the quartz square wafer (5) with an electrode leading-out end is connected on the dispensing platform (8) through conductive adhesive, and the other side of the quartz square wafer is placed on the supporting platform (9).
3. A low acceleration sensitivity quartz crystal resonator according to claim 2, characterized by, that it further comprises a resonator left terminal (10) and a resonator right terminal (11) disposed at two ends of the bottom surface of the ceramic base (1); the resonator left leading-out end (10) is connected with a dispensing platform (8) in an upper cavity (2) or a lower cavity (3) close to one side of the resonator left leading-out end (10) through wiring inside the ceramic base (1); the resonator right leading-out end (11) is connected with a lower cavity (2) close to one side of the resonator right leading-out end (11) or a dispensing platform (8) in an upper cavity (3) through wiring inside the ceramic base (1).
4. The quartz crystal resonator with low acceleration sensitivity according to claim 3, characterized in that the upper sealing ring (12) and the lower sealing ring (13) are correspondingly arranged on the periphery of the cavity end face of the upper cavity (2) and the lower cavity (3); the upper metal cover plate (6) and the lower metal cover plate (7) are welded on the corresponding upper sealing ring (12) and the lower sealing ring (13) through a parallel sealing welding process.
5. The quartz crystal resonator with low acceleration sensitivity as claimed in claim 4, characterized in that the external dimensions, frequency, cut shape and cut angle of the four quartz crystal wafers are all the same, and the materials used for the electrodes are all the same.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210707890.4A CN114785314A (en) | 2022-06-22 | 2022-06-22 | Quartz crystal resonator with low acceleration sensitivity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210707890.4A CN114785314A (en) | 2022-06-22 | 2022-06-22 | Quartz crystal resonator with low acceleration sensitivity |
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| CN114785314A true CN114785314A (en) | 2022-07-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210707890.4A Pending CN114785314A (en) | 2022-06-22 | 2022-06-22 | Quartz crystal resonator with low acceleration sensitivity |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116346078A (en) * | 2023-05-31 | 2023-06-27 | 成都世源频控技术股份有限公司 | Surface-mounted quartz crystal resonator with modal suppression function |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090201096A1 (en) * | 2006-06-29 | 2009-08-13 | Rakon Uk Limited | Oscillator |
| US20100117750A1 (en) * | 2008-11-07 | 2010-05-13 | Greenray Industries, Inc. | Crystal oscillator with reduced acceleration sensitivity |
| JP2016010096A (en) * | 2014-06-26 | 2016-01-18 | 京セラクリスタルデバイス株式会社 | Crystal resonator |
| CN107852134A (en) * | 2015-05-11 | 2018-03-27 | Kvg石英晶体科技有限公司 | With the oscillator for lowering acceleration sensitivity |
-
2022
- 2022-06-22 CN CN202210707890.4A patent/CN114785314A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090201096A1 (en) * | 2006-06-29 | 2009-08-13 | Rakon Uk Limited | Oscillator |
| US20100117750A1 (en) * | 2008-11-07 | 2010-05-13 | Greenray Industries, Inc. | Crystal oscillator with reduced acceleration sensitivity |
| JP2016010096A (en) * | 2014-06-26 | 2016-01-18 | 京セラクリスタルデバイス株式会社 | Crystal resonator |
| CN107852134A (en) * | 2015-05-11 | 2018-03-27 | Kvg石英晶体科技有限公司 | With the oscillator for lowering acceleration sensitivity |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116346078A (en) * | 2023-05-31 | 2023-06-27 | 成都世源频控技术股份有限公司 | Surface-mounted quartz crystal resonator with modal suppression function |
| CN116346078B (en) * | 2023-05-31 | 2023-08-01 | 成都世源频控技术股份有限公司 | Surface-mounted quartz crystal resonator with modal suppression function |
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Application publication date: 20220722 |
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