CN114784467B - Signal cross-layer transmission device and antenna system - Google Patents

Signal cross-layer transmission device and antenna system Download PDF

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Publication number
CN114784467B
CN114784467B CN202210508525.0A CN202210508525A CN114784467B CN 114784467 B CN114784467 B CN 114784467B CN 202210508525 A CN202210508525 A CN 202210508525A CN 114784467 B CN114784467 B CN 114784467B
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metal
layer
isosceles trapezoid
waveguide structure
bottom edge
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CN114784467A (en
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王俊涛
黄志强
李旭阳
何凌强
胡丽娟
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Saien Lingdong Shanghai Intelligent Technology Co ltd
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Saien Lingdong Shanghai Intelligent Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/16—Auxiliary devices for mode selection, e.g. mode suppression or mode promotion; for mode conversion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2208—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors

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Abstract

The invention discloses a signal cross-layer transmission device and an antenna system, wherein the signal cross-layer transmission device comprises: the transmission substrate is formed by sequentially stacking t layers of first plates and r layers of second plates; the upper surface and the lower surface of each layer of dielectric substrate are respectively covered with a metal layer; the first board is a high-frequency PCB board, and the second board is a high-frequency PCB board or a common PCB board; a first top signal transmission module, a substrate integrated waveguide module and a second top signal transmission module are integrated on the transmission substrate; wherein: the first top signal transmission module receives an electromagnetic wave signal to be transmitted and transmits the electromagnetic wave signal to the substrate integrated waveguide module; the substrate integrated waveguide module transmits the electromagnetic wave signals in the longitudinal direction of the transmission substrate and returns the electromagnetic wave signals to the second top layer signal transmission module on the top layer; the second top signal transmission module transversely transmits the electromagnetic wave signal to the radio frequency chip. The invention avoids the problem of interference of top layer radio frequency routing.

Description

Signal cross-layer transmission device and antenna system
Technical Field
The present invention relates to the field of signal transmission, and in particular, to a signal layer-through transmission apparatus and an antenna system.
Background
The millimeter wave imaging radar becomes the mainstream of the next generation millimeter wave radar due to the characteristics of long detection distance, high detection precision, strong pitching and horizontal angle resolution and the like. For the millimeter wave imaging radar, the reasonability or the non-reasonability of the antenna layout directly influences the quality of the detection performance of the millimeter wave imaging radar, however, the number of the receiving and transmitting antennas of the imaging radar is relatively large, if the antenna layout is unreasonable in design, although the imaging radar has excellent detection performance, the mutual interference exists among the radio frequency wiring lines of a plurality of antennas, so that the antenna layout cannot be realized, how to ensure that the antenna layout can meet the requirement of the detection performance in a limited PCB size space, and also ensure that the radio frequency wiring lines between an MMIC (radio frequency chip) and corresponding antennas are reasonable without the interference problem, and the millimeter wave imaging radar is a key point for the research and development of the millimeter wave imaging radar.
There are two common ways currently used: one mode is that a coaxial line is formed by punching a PCB (printed Circuit Board) to transmit a high-frequency signal of a surface layer to an intermediate layer, and then the high-frequency signal of the intermediate layer is transmitted back to the surface layer by punching to form the coaxial line, so that the aim of avoiding radio frequency wiring interference is achieved, but the quality of the high-frequency signal is very easily influenced by the punching position, the impedance mismatch between a microstrip line and the coaxial line can be caused by slight deviation of the punching position, the attenuation of the high-frequency signal is greatly increased, the requirement on the punching positioning precision is very high, and the processing and manufacturing are not facilitated; the other mode is to adjust the antenna layout and redesign the antenna layout to avoid the interference problem of the radio frequency routing. Therefore, it is urgently needed to find a method for transmitting high-frequency signals through layers, which has good signal quality and small processing difficulty, to avoid the problem of radio frequency wiring interference.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a signal transmission device and an antenna system.
Specifically, the technical scheme of the invention is as follows:
in one aspect, the present invention provides a signal transmission apparatus through layers, including: the transmission substrate is formed by sequentially stacking t layers of first plates and r layers of second plates; the upper surface and the lower surface of each layer of dielectric substrate are respectively covered with a metal layer, and the transmission body has t + r +1 metal layers from top to bottom; wherein t is more than or equal to 3, r is more than or equal to 1; the first plate is a high-frequency PCB plate, and the second plate is a high-frequency PCB plate or a common PCB plate; a first top signal transmission module, a substrate integrated waveguide module and a second top signal transmission module are integrated on the transmission substrate; wherein: the first top signal transmission module is arranged on the top layer of the transmission base body, and is used for receiving the electromagnetic wave signals to be transmitted and transmitting the electromagnetic wave signals to the substrate integrated waveguide module; the substrate integrated waveguide module is used for receiving the electromagnetic wave signals transmitted by the first top layer signal transmission module, transmitting the electromagnetic wave signals in the longitudinal direction of the transmission base body and returning the electromagnetic wave signals to the second top layer signal transmission module of the top layer; the second top layer signal transmission module is arranged on the top layer of the transmission substrate and used for receiving the electromagnetic wave signals transmitted by the substrate integrated waveguide module and transversely transmitting the electromagnetic wave signals to the radio frequency chip.
Further, the substrate integrated waveguide module includes: the first substrate integrated waveguide structure is arranged on the top layer of the transmission substrate at one end and is connected with the first top layer signal transmission module; the other end of the first substrate integrated waveguide structure is arranged on the (m + 1) th metal layer of the transmission substrate and is connected with the intermediate layer signal transmission submodule; the electromagnetic wave signal is transmitted from the 1 st metal layer to the (m + 1) th metal layer; wherein m is more than or equal to 2 and less than or equal to t; the middle layer signal transmission submodule is used for receiving the electromagnetic wave signals transmitted by the first substrate integrated waveguide structure and transmitting the electromagnetic wave signals on the (m + 1) th metal layer of the transmission substrate; one end of the second substrate integrated waveguide structure is arranged on the (m + 1) th metal layer and is connected with the middle layer signal transmission submodule; the other end of the second substrate integrated waveguide structure is arranged on the top layer and is connected with the second top layer signal transmission module; and the second top layer signal transmission module is used for receiving the electromagnetic wave signals transmitted by the middle layer signal transmission sub-module and transmitting the electromagnetic wave signals to the top layer from the (m + 1) th metal layer.
Further, the first substrate integrated waveguide structure and the second substrate integrated waveguide structure are respectively arranged on two sides of the middle layer signal transmission submodule; the first substrate integrated waveguide structure and the second substrate integrated waveguide structure each include the following structures within a region of the transmission matrix in which they are located: the first metal layer 1, the (m + 1) th metal layer, two parallel rows of first metalized via holes penetrating through the (1) th to (m + 1) th metal layers, a second metalized via hole penetrating through the (3) th to (t + r + 1) th metal layers and a third metalized via hole penetrating through the (1) th to (m) th metal layers; the sizes of the three metallized through holes and the hole intervals of the adjacent holes are equal; and a rectangular area surrounded by the first type of metalized through holes, the second type of metalized through holes and the third type of metalized through holes on the metal layer of the 3 rd layer is etched to form coupling calibers, and the metal layer of the 2 nd layer and the metal layers from the 4 th layer to the m th layer are etched to form the same coupling calibers corresponding to the metal layer of the 3 rd layer in the vertical direction.
Further, the middle layer signal transmission submodule includes: the first TE mode conversion structure, the second coplanar waveguide structure and the second TEM mode conversion structure are connected in sequence; wherein: the first TE mode conversion structure is used for converting the electromagnetic wave signals transmitted by the first substrate integrated waveguide structure from a TE mode to a TEM mode; the second coplanar waveguide structure is used for receiving the electromagnetic wave signal converted by the first TE mode conversion structure and transmitting the electromagnetic wave signal to the second TEM mode conversion structure; and the second TEM mode conversion structure is used for converting the electromagnetic wave signals transmitted by the second coplanar waveguide structure from a TEM mode to a TE mode and then transmitting the electromagnetic wave signals to the second substrate integrated waveguide structure.
Further, the first TE mode conversion structure includes: a second isosceles trapezoid metal patch formed on the (m + 1) th metal layer in an etching mode, wherein a second bottom edge of the second isosceles trapezoid metal patch is connected with the second coplanar waveguide structure; the first bottom edge of the second isosceles trapezoid metal patch is connected with the first substrate integrated waveguide structure; the length of the second bottom edge of the second isosceles trapezoid metal patch is the same as the width of the middle metal strip of the second coplanar waveguide structure.
The second TEM mode conversion structure comprises: a third isosceles trapezoid metal patch formed on the (m + 1) th metal layer in an etching manner, wherein the first bottom edge of the third isosceles trapezoid metal patch is connected with the second coplanar waveguide structure; a second bottom edge of the third isosceles trapezoid metal patch is connected with the second substrate integrated waveguide structure; the length of the first bottom edge of the third isosceles trapezoid metal patch is the same as the width of the middle metal strip of the second coplanar waveguide structure.
Further, the first top-level signal transmission module includes: impedance converter, first transmission line and the first TEM mode conversion structure that connects gradually, wherein: the impedance converter comprises n microstrip lines with the length of one quarter of wavelength and the width gradually changed, wherein n is more than or equal to 1; the impedance transformer is used for impedance matching; the first transmission line is used for transmitting the electromagnetic wave signals transmitted by the antenna through the impedance converter; the first TEM mode conversion structure is configured to convert the transmission mode of the high-frequency electromagnetic wave transmitted by the first transmission line from the TEM mode to the TE mode, and transmit the converted transmission mode to the substrate integrated waveguide module.
Further, the first transmission line is a first coplanar waveguide structure; a row of metallized through holes penetrating through the 1 st to 2 nd metal layers are respectively arranged on the metal surfaces at two sides of the middle metal conduction band of the first coplanar waveguide structure; the first TEM mode conversion structure comprises: a first isosceles trapezoid metal patch formed on the first metal layer in an etching mode, wherein a second bottom edge of the first isosceles trapezoid metal patch is connected with a middle metal conduction band of the first coplanar waveguide structure; the first bottom edge of the first isosceles trapezoid metal patch is connected with the substrate integrated waveguide; the length of the second bottom edge of the first isosceles trapezoid metal patch is the same as the width of the middle metal belt of the first coplanar waveguide structure; the metal strips on two sides of the first isosceles trapezoid metal patch and the metal strips on the two sides are respectively and uniformly provided with a row of metalized through holes penetrating through the 1 st to 3 rd metal layers; the metal strips on two sides of the first isosceles trapezoid metal patch are respectively connected with the metal surfaces on two sides of the corresponding first coplanar waveguide structure, the distances from the symmetry axis of the first isosceles trapezoid metal patch perpendicular to the bottom edge to the metal strips on two sides of the first isosceles trapezoid metal patch are equal, and the distances from the symmetry axis of the first isosceles trapezoid metal patch perpendicular to the bottom edge to the metallized through holes on two sides of the first isosceles trapezoid metal patch are equal; the length of a first bottom edge of the first isosceles trapezoid metal patch is smaller than the distance between the metal belts on two sides of the first isosceles trapezoid metal patch; and the second coplanar waveguide further comprises a layer 2 metal layer, wherein the layer 2 metal layer is used as a grounding metal plate of the first coplanar waveguide.
Further, the first transmission line is a first microstrip line; the first TEM mode conversion structure comprises: the second bottom edge of the first isosceles trapezoid metal patch is connected with the first microstrip line; the first bottom edge of the first isosceles trapezoid metal patch is connected with the substrate integrated waveguide; the length of the second bottom edge of the first isosceles trapezoid metal patch is the same as the width of the first microstrip line.
Further, the second top signal transmission module includes: the second TE mode conversion structure and the second transmission line are connected in sequence; wherein: the second TE mode conversion structure is configured to convert the electromagnetic wave signal transmitted by the substrate integrated waveguide module from the TE mode to the TEM mode, and transmit the electromagnetic wave signal to the second transmission line; and the second transmission line is used for transmitting the electromagnetic wave signals to the radio frequency chip on the top layer in a TEM mode.
Further, the second transmission line is a third coplanar waveguide structure; a row of metallized through holes penetrating through the metal layers from 1 st to 2 nd are respectively arranged on the metal surfaces on two sides of the middle metal conduction band of the third coplanar waveguide structure; the second TE mode conversion structure includes: a fourth isosceles trapezoid metal patch formed on the top metal layer in an etching manner, wherein a second bottom edge of the fourth isosceles trapezoid metal patch is connected with the third coplanar waveguide structure; the first bottom edge of the fourth isosceles trapezoid metal patch is connected with the substrate integrated waveguide module; the length of the second bottom edge of the fourth isosceles trapezoid metal patch is the same as the width of the middle metal strip of the third coplanar waveguide structure; the metal strips on the two sides of the fourth isosceles trapezoid metal patch and the metal strips on the two sides are respectively and uniformly provided with a row of metalized through holes penetrating through the 1 st to 3 rd metal layers; the metal strips on two sides of the fourth isosceles trapezoid metal patch are respectively connected with the metal surfaces on two sides of the corresponding third coplanar waveguide structure, the distance from the symmetry axis of the fourth isosceles trapezoid metal patch, which is perpendicular to the bottom edge, to the metal strips on two sides of the fourth isosceles trapezoid metal patch is equal, and the distance from the symmetry axis of the fourth isosceles trapezoid metal patch, which is perpendicular to the bottom edge, to the metallized through holes on two sides of the fourth isosceles trapezoid metal patch is equal; the length of the first bottom edge of the fourth isosceles trapezoid metal patch is smaller than the distance between the metal belts on the two sides of the fourth isosceles trapezoid metal patch; and the second metal layer 2 is used as a grounding metal plate of the third coplanar waveguide.
Further, the second transmission line is a second microstrip line; the second TE mode conversion structure includes: a fourth isosceles trapezoid metal patch positioned on the top metal layer, wherein a second bottom edge of the fourth isosceles trapezoid metal patch is connected with the second microstrip line; the first bottom edge of the second isosceles trapezoid metal patch is connected with the substrate integrated waveguide; the length of the second bottom edge of the fourth isosceles trapezoid metal patch is the same as the width of the second microstrip line.
On the other hand, the invention also provides an antenna system, which comprises an antenna, the signal through-layer transmission device and a radio frequency chip, wherein the signal through-layer transmission device is arranged on any one of the antenna, the signal through-layer transmission device and the radio frequency chip; wherein: the antenna and the radio frequency chip are both arranged on the top layer of the signal cross-layer transmission device, the antenna is connected with a first top layer signal transmission module of the signal cross-layer transmission device, and the radio frequency chip is connected with a second top layer signal transmission module of the signal cross-layer transmission device; and the signal received by the antenna at the top layer is transmitted to the radio frequency chip at the top layer through the signal through-layer transmission device, so that the signal transmission between the antenna and the radio frequency chip is realized.
Compared with the prior art, the invention has at least one of the following beneficial effects:
(1) The invention provides a high-frequency signal through-layer transmission device for a millimeter wave radar, which can effectively realize the through-layer transmission of a high-frequency signal from a TOP layer to a (m + 1) th layer and then to the TOP layer and provides a simple and reliable solution for avoiding the interference problem of high-frequency radio frequency routing.
(2) The invention ensures that the problem of radio frequency routing interference does not need to be considered too much when the radar antenna layout is designed, and reduces the difficulty of antenna layout and radio frequency routing.
(3) The invention has simple structure, less loss, low requirement on the positioning precision of punching and easy manufacture, thereby having better stability and consistency of performance and being beneficial to the mass production of products.
(4) The invention adopts a microstrip-substrate integrated waveguide structure, which is beneficial to integration on a PCB and miniaturization of products.
Drawings
The above features, technical features, advantages and modes of realisation of the present invention will be further described in the following detailed description of preferred embodiments thereof, which is to be read in connection with the accompanying drawings.
FIG. 1 is a schematic view of a transmission substrate stack in a signal transmission device according to the present invention;
FIG. 2 is a block diagram of an embodiment of a signal cross-layer transport apparatus of the present invention;
FIG. 3 is a block diagram of another embodiment of the signal cross layer transmission apparatus of the present invention;
FIG. 4 is a schematic view of a substrate integrated waveguide module of the present invention at a second metal layer;
FIG. 5 is a schematic view of a substrate-integrated waveguide module of the present invention at a third metal layer;
FIG. 6 is a schematic view of a substrate-integrated waveguide module according to the present invention at the (m + 1) th metal layer;
FIG. 7 is a schematic view of another embodiment of a substrate-integrated waveguide module according to the present invention at the (m + 1) -th metal layer;
FIG. 8 is a top level schematic view of one embodiment of a signal cross-layer transport device of the present invention;
FIG. 9 is a top level schematic view of another embodiment of a signal pass-through device of the present invention;
FIG. 10 is a schematic structural view of a first coplanar waveguide structure of the present invention;
FIG. 11 is a side view in longitudinal cross-section of one embodiment of a signal passing transport device of the present invention;
fig. 12 is a side view in longitudinal cross-section of another embodiment of a signal conduit device of the present invention;
fig. 13 is a graph of insertion loss for one embodiment of a signal layering transmission arrangement of the present invention;
fig. 14 is a return loss plot for one embodiment of a signal tunneling apparatus of the present invention.
The reference numbers illustrate:
100-a first top level signal transmission module; 200-substrate integrated waveguide module; 300- -second top signal transmission module; 110- -impedance transformer; 120- -first transmission line; 130- -a first TEM mode conversion structure; 210-a first substrate integrated waveguide structure; 220-middle layer signal transmission submodule; 230 — a second substrate integrated waveguide structure; 221- -first TE mode transition Structure; 222- -a second coplanar waveguide structure; 223 — a second TEM mode conversion structure; 310- -second TE mode transition structure; 320- -a second transmission line; 201- -first type of metallized via; 202-a second metalized via; 203- -third metallized via; 131- -first isosceles trapezoid metal patch; 311- -fourth isosceles trapezoid metal patch; 121 — a first coplanar waveguide structure; 321- -a third coplanar waveguide structure; 122 — a first microstrip line; 322-a second microstrip line; 1211 — an intermediate metal strip of the first coplanar waveguide structure; 1212-copper foils on both sides of the intermediate metal strip; 1213-metalized vias on both sides of the middle strap.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will be made with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
For the sake of simplicity, only those parts relevant to the invention are schematically shown in the drawings, and they do not represent the actual structure as a product. In addition, in order to make the drawings concise and understandable, components having the same structure or function in some of the drawings are only schematically illustrated or only labeled. In this document, "one" means not only "only one" but also a case of "more than one".
It should be further understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.
In this context, it is to be understood that, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.
In addition, in the description of the present application, the terms "first," "second," and the like are used only for distinguishing the description, and are not intended to indicate or imply relative importance.
In one embodiment, the present embodiment provides a signal transmission apparatus through a layer, including:
the transmission substrate is composed of t layers of first plates and r layers of second plates which are sequentially stacked as shown in fig. 1; the upper surface and the lower surface of each layer of dielectric substrate are respectively covered with a metal layer, and the transmission body has t + r +1 metal layers from top to bottom; wherein t is more than or equal to 3, r is more than or equal to 1; the first plate is a high-frequency PCB plate, and the second plate is a high-frequency PCB plate or a common PCB plate;
specifically, first panel and second panel can all be high frequency PCB panel, and for practicing thrift the cost, also can first panel adopt high frequency PCB panel, and the second panel adopt ordinary PCB panel can. The ordinary PCB board is easily influenced by temperature, humidity and the like, so that the dielectric constant of the ordinary PCB board at high frequency is not very stable, if the ordinary PCB board is used for transmitting high-frequency signals, the transmission signals can be easily influenced, the ordinary PCB board is only suitable for medium-frequency or low-frequency signal transmission, therefore, in the embodiment, in order to stably transmit the high-frequency signals transmitted by the antenna, at least t layers of first boards are required to be high-frequency PCB boards so as to transmit high-frequency signals, and r layers of ordinary PCB boards stacked below can be used for low-frequency devices. In addition, the hardness of the common PCB is better than that of the high-frequency PCB, so that if the high-frequency PCB is combined with the low-frequency PCB, on one hand, stable transmission of signals of various frequency bands can be met, the manufacturing cost is reduced, the overall hardness is increased, and the stability is better.
The system structure diagram of the signal through-layer transmission device is shown in fig. 2, and a first top-layer signal transmission module 100, a substrate integrated waveguide module 200, and a second top-layer signal transmission module 300 are integrated on the transmission substrate; wherein:
the first top signal transmission module 100 is disposed on the top layer of the transmission substrate, and is configured to receive an electromagnetic wave signal to be transmitted and transmit the electromagnetic wave signal to the substrate integrated waveguide module 200;
the substrate integrated waveguide module 200 is configured to receive the electromagnetic wave signal transmitted by the first top signal transmission module 100, transmit the electromagnetic wave signal in the longitudinal direction of the transmission substrate, and return the electromagnetic wave signal to the second top signal transmission module 300 on the top layer;
the second top signal transmission module 300 is disposed on the top of the transmission substrate, and is configured to receive the electromagnetic wave signal transmitted by the substrate integrated waveguide module 200 and transversely transmit the electromagnetic wave signal to the radio frequency chip.
Specifically, in this embodiment, the substrate integrated waveguide module is adopted in combination, so that high-frequency signal transmission from the top layer (i.e., the 1 st metal layer) to the (m + 1) th metal layer and then to the top layer is realized, thereby avoiding the problem of interference of top layer radio frequency traces, and the problem of interference of radio frequency traces does not need to be considered too much during antenna layout design.
In another embodiment of the present invention, based on the above-mentioned embodiments, as shown in fig. 2, the substrate-integrated waveguide module 200 includes:
a first substrate integrated waveguide structure 210, wherein one end of the first substrate integrated waveguide structure 210 is disposed on the top layer of the transmission substrate and connected to the first top-layer signal transmission module 100; the other end of the first substrate integrated waveguide structure 210 is located at the (m + 1) th metal layer of the transmission substrate and is connected with the intermediate layer signal transmission submodule 220; the electromagnetic wave signal is transmitted from the 1 st metal layer to the (m + 1) th metal layer; wherein m is more than or equal to 2 and less than or equal to t;
the middle-layer signal transmission submodule 220 is configured to receive an electromagnetic wave signal transmitted by the first substrate integrated waveguide structure 210, and transmit the electromagnetic wave signal on the (m + 1) -th metal layer of the transmission substrate;
a second substrate integrated waveguide structure 230, one end of which is disposed on the (m + 1) th metal layer and connected to the middle signal transmission sub-module 220; the other end of the second substrate integrated waveguide structure 230 is arranged at the top layer and connected with the second top layer signal transmission module 230; and a second top signal transmission module 300, configured to receive the electromagnetic wave signal transmitted by the middle signal transmission sub-module 220, and transmit the electromagnetic wave signal from the (m + 1) th metal layer to the top layer.
In this embodiment, the substrate integrated waveguide module includes two substrate integrated waveguide structures and an intermediate layer signal transmission sub-module connecting the two substrate integrated waveguide structures; specifically, the first substrate is integrated with a waveguide structure and is used for transmitting a signal received from the top layer to the (m + 1) th metal layer; the middle layer signal transmission submodule is used for transmitting the signal transmitted by the first substrate integrated waveguide structure on the (m + 1) th metal layer and transmitting the signal to the second substrate integrated waveguide structure; and the second substrate integrated waveguide structure is used for longitudinally transmitting the signals transmitted by the middle layer signal transmission submodule to the top layer from the (m + 1) th layer and further transmitting the signals to the radio frequency chip through the second top layer signal transmission module on the top layer. Therefore, more space is left for the antenna to carry out layout design on the top layer, and the routing lines are not interfered and not influenced mutually.
Further, the first substrate integrated waveguide structure and the second substrate integrated waveguide structure are respectively arranged on two sides of the middle layer signal transmission submodule; the first substrate integrated waveguide structure and the second substrate integrated waveguide structure each include the following structures within a region of the transmission matrix in which they are located:
the first-layer metal layer is a 1 st metal layer, the (m + 1) th metal layer, two rows of parallel first-type metalized through holes penetrating the 1 st to the (m + 1) th metal layers, a second-type metalized through hole penetrating the 3 rd to the t + r +1 th metal layers and a third-type metalized through hole penetrating the 1 st to the m-th metal layers; the sizes of the three metallized through holes and the hole intervals of the adjacent holes are equal; and
and a rectangular area surrounded by the first type of metalized via holes, the second type of metalized via holes and the third type of metalized via holes on the metal layer of the 3 rd layer is etched to form coupling calibers, and the metal layers of the 2 nd layer and the 4 th to m th layers are etched to form the same coupling calibers which correspond to the metal layer of the 3 rd layer in the vertical direction.
Specifically, fig. 4 shows a schematic diagram of the substrate-integrated waveguide module on the 2 nd metal layer, fig. 5 shows a schematic diagram of the substrate-integrated waveguide module on the 3 rd metal layer, and fig. 6 shows a schematic diagram of the substrate-integrated waveguide module on the m +1 th metal layer; the first substrate integrated waveguide structure and the second substrate integrated waveguide structure are basically the same, and we take the first substrate integrated waveguide structure as an example to explain the following structures on each metal layer: a schematic structural diagram of the first substrate integrated waveguide structure at the 1 st metal layer is shown in fig. 8, a schematic structural diagram of the first substrate integrated waveguide structure at the 2 nd metal layer is shown in fig. 4, and the first-type metalized via 201 penetrates through the 1 st to the (m + 1) th metal layers and is represented by a solid-line circle in the drawing; the second metalized via 202 penetrates from the layer 3 to the layer t + r +1 (bottom) metal layer, which is not on the layer 1 or the layer 2, and is indicated by a dashed circle in fig. 4. The third metallized via hole 203 penetrates through the 1 st to mth metal layers, and as can be seen from fig. 5, the three metallized via holes enclose a rectangle, the rectangle forms a coupling caliber through etching, and the same coupling calibers are etched on the 2 nd metal layer, the 4 th metal layer and the mth metal layer, and the coupling calibers correspond to each other up and down. The second substrate integrated waveguide structure is similar and not repeated.
Preferably, as shown in fig. 3, the middle layer signal transmission sub-module 220 includes: a first TE mode conversion structure 221, a second coplanar waveguide structure 222, and a second TEM mode conversion structure 223 connected in sequence; wherein:
the first TE mode conversion structure 221 is configured to convert the electromagnetic wave signal transmitted by the first substrate-integrated waveguide structure 210 from a TE mode to a TEM mode;
the second coplanar waveguide structure 222 is configured to receive the electromagnetic wave signal converted by the first TE mode conversion structure 221, and transmit the electromagnetic wave signal to the second TEM mode conversion structure 223;
the second TEM mode conversion structure 223 is configured to convert the electromagnetic wave signal transmitted by the second coplanar waveguide structure 222 from the TEM mode to the TE mode, and then transmit the converted electromagnetic wave signal to the second substrate integrated waveguide structure 230.
Optionally, as shown in fig. 5, the first TE mode conversion structure 221 includes:
a second isosceles trapezoid metal patch formed on the (m + 1) th metal layer by etching, wherein a second bottom edge of the second isosceles trapezoid metal patch is connected with the second coplanar waveguide structure 222; the first bottom edge of the second isosceles trapezoid metal patch is connected with the first substrate integrated waveguide structure 210; the length of the second base edge of the second isosceles trapezoid metal patch is the same as the width of the middle metal strip of the second coplanar waveguide structure 222. In fig. 5, the second bottom edge of the second isosceles trapezoid metal patch is the upper bottom edge, and the first bottom edge is the lower bottom edge; of course, the other way around, it is only necessary that the length of the bottom side connected to the second coplanar waveguide structure is equal to the width of the middle metal strip of the second coplanar waveguide.
The second TEM mode conversion structure 223 includes:
a third isosceles trapezoid metal patch formed on the (m + 1) th metal layer by etching, wherein a first bottom edge of the third isosceles trapezoid metal patch is connected with the second coplanar waveguide structure 222; a second bottom edge of the third isosceles trapezoid metal patch is connected to the second substrate integrated waveguide structure 230; the length of the first base of the third isosceles trapezoid metal patch is the same as the width of the middle metal strip of the second coplanar waveguide structure 222.
In another embodiment of the present invention, as shown in fig. 3, on the basis of any of the above embodiments, the first top-level signal transmission module 100 includes: an impedance transformer 110, a first transmission line 120, and a first TEM mode conversion structure 130 connected in series, wherein:
the impedance transformer 110 comprises n microstrip lines with the length of one quarter wavelength and the width gradually changed; for impedance matching;
the first transmission line 120 is configured to transmit an electromagnetic wave signal transmitted by the antenna through the impedance converter 110;
the first TEM mode conversion structure 130 is configured to convert the transmission mode of the high-frequency electromagnetic wave transmitted by the first transmission line 120 from the TEM mode to the TE mode, and transmit the converted transmission mode to the substrate-integrated waveguide module 200.
The second top-level signal transmission module 300 includes: a second TE mode conversion structure 310 and a second transmission line 320 connected in sequence; wherein:
the second TE mode conversion structure 310 is configured to convert the electromagnetic wave signal transmitted by the substrate integrated waveguide module 200 from the TE mode to the TEM mode, and transmit the electromagnetic wave signal to the second transmission line 320;
the second transmission line 320 is used for transmitting the electromagnetic wave signals to the radio frequency chip on the top layer in a TEM mode.
Specifically, the first transmission line 120 may be implemented by a coplanar waveguide structure, or may be implemented by a microstrip line. Likewise, the second transmission line 320 may adopt a coplanar waveguide structure or a microstrip line structure.
If the first transmission line is a first coplanar waveguide structure; as shown in fig. 8, a row of metalized via holes penetrating through the 1 st to 2 nd metal layers are respectively disposed on the metal surfaces on both sides of the middle metal conduction band of the first coplanar waveguide structure; the first TEM mode conversion structure comprises: a first isosceles trapezoid metal patch formed on the first metal layer in an etching mode, wherein a second bottom edge of the first isosceles trapezoid metal patch is connected with a middle metal conduction band of the first coplanar waveguide structure; the first bottom edge of the first isosceles trapezoid metal patch is connected with the substrate integrated waveguide; the length of the second bottom edge of the first isosceles trapezoid metal patch is the same as the width of the middle metal belt of the first coplanar waveguide structure; the metal strips on two sides of the first isosceles trapezoid metal patch and the metal strips on the two sides are respectively and uniformly provided with a row of metalized through holes penetrating through the 1 st to 3 rd metal layers; the metal strips on two sides of the first isosceles trapezoid metal patch are respectively connected with the metal surfaces on two sides of the corresponding first coplanar waveguide structure, the distance from the symmetry axis perpendicular to the bottom edge of the first isosceles trapezoid metal patch to the metal strips on two sides of the first isosceles trapezoid metal patch is equal, and the distance from the symmetry axis perpendicular to the bottom edge of the first isosceles trapezoid metal patch to the metalized through holes on two sides of the first isosceles trapezoid metal patch is equal; the length of a first bottom edge of the first isosceles trapezoid metal patch is smaller than the distance between the metal belts on two sides of the first isosceles trapezoid metal patch; and a 2 nd metal layer as a ground metal plate.
If the first transmission line is a first microstrip line; as shown in fig. 9, the first TEM mode conversion structure includes: the second bottom edge of the first isosceles trapezoid metal patch is connected with the first microstrip line; the first bottom edge of the first isosceles trapezoid metal patch is connected with the substrate integrated waveguide; the length of the second bottom edge of the first isosceles trapezoid metal patch is the same as the width of the first microstrip line.
If the second transmission line is a third coplanar waveguide structure; as shown in fig. 8, a row of metalized via holes penetrating through the metal layers 1 to 2 are respectively formed on the metal surfaces on both sides of the middle metal conduction band of the third coplanar waveguide structure; the second TE mode conversion structure includes: a fourth isosceles trapezoid metal patch formed on the top metal layer in an etching manner, wherein a second bottom edge of the fourth isosceles trapezoid metal patch is connected with the third coplanar waveguide structure; the first bottom edge of the fourth isosceles trapezoid metal patch is connected with the substrate integrated waveguide module; the length of the second bottom edge of the fourth isosceles trapezoid metal patch is the same as the width of the middle metal strip of the third coplanar waveguide structure; the metal strips on the two sides of the fourth isosceles trapezoid metal patch and the metal strips on the two sides are respectively and uniformly provided with a row of metalized through holes penetrating through the 1 st to 3 rd metal layers; the metal strips on two sides of the fourth isosceles trapezoid metal patch are respectively connected with the metal surfaces on two sides of the corresponding third coplanar waveguide structure, the distance from the symmetry axis of the fourth isosceles trapezoid metal patch, which is perpendicular to the bottom edge, to the metal strips on two sides of the fourth isosceles trapezoid metal patch is equal, and the distance from the symmetry axis of the fourth isosceles trapezoid metal patch, which is perpendicular to the bottom edge, to the metallized through holes on two sides of the fourth isosceles trapezoid metal patch is equal; the length of the first bottom edge of the fourth isosceles trapezoid metal patch is smaller than the distance between the metal belts on two sides of the fourth isosceles trapezoid metal patch; and a 2 nd metal layer as a ground metal plate.
If the second transmission line can also adopt a second microstrip line; as shown in fig. 9, the second TE mode conversion structure includes: a fourth isosceles trapezoid metal patch positioned on the top metal layer, wherein a second bottom edge of the fourth isosceles trapezoid metal patch is connected with the second microstrip line; the first bottom edge of the second isosceles trapezoid metal patch is connected with the substrate integrated waveguide; the length of the second bottom edge of the fourth isosceles trapezoid metal patch is the same as the width of the second microstrip line.
The signal through-layer transmission device provided by the embodiment can realize the through-layer transmission of high-frequency signals on the basis of avoiding the problem of TOP layer radio frequency wiring interference. Specifically, the electromagnetic wave signals to be transmitted on the top layer of the integrated waveguide structure are transmitted to the first substrate integrated waveguide structure through the first top layer signal transmission module, the electromagnetic wave signals are transmitted to the (m + 1) th metal layer from the top layer, then signal transmission is performed on the (m + 1) th metal layer through the middle layer signal transmission submodule, more space is provided for wiring of the antenna layout on the top layer, finally, the electromagnetic wave signals are transmitted to one end of the integrated waveguide structure on the (m + 1) th layer of the second substrate through the middle layer signal transmission submodule, the electromagnetic wave signals are transmitted to the top layer (the first metal layer) from the (m + 1) th layer through the integrated waveguide structure of the second substrate, and then the electromagnetic wave signals are transmitted to the radio frequency chip on the top layer through the second top layer signal transmission module. Therefore, the transmission of high-frequency signals from the TOP layer to the (m + 1) th layer and then to the TOP layer is realized, so that the problem of radio frequency wiring interference of the TOP layer is avoided.
The signal layer-crossing transmission device of the present application is further described by two more detailed specific examples.
Specifically, a signal layer-through transmission apparatus according to another embodiment of the present invention, as shown in fig. 1, includes: the composite board is formed by overlapping (t is more than or equal to 3) t layers of high-frequency PCB boards (from the 1 st layer to the t th layer of base materials) and r (r is more than or equal to 1) layers of common PCB boards (from the t +1 st layer to the t + r th layer of base materials), and metal layers are attached to the upper surface and the lower surface of each layer of PCB board, so that the (t + r + 1) layers of metal layers are formed. In the TOP layer (i.e. the 1 st metal layer), as shown in FIG. 8, the antenna is connected to the first coplanar waveguide 121 through the impedance transformer 110, and is connected to the first substrate integrated waveguide structure 210 composed of the 1 st to the mth (2. Ltoreq. M.ltoreq.t) layers of high frequency PCB boards through the first TEM mode conversion structure 130, as shown in FIGS. 3 and 8. On the (m + 1) th layer, the other end of the first substrate integrated waveguide structure 210 is connected with the second coplanar waveguide 222 on the (m + 1) th layer through the first TE mode conversion structure 221, the other end of the second coplanar waveguide 222 is connected with the second substrate integrated waveguide structure 230 composed of the high-frequency PCB boards from the 1 st layer to the mth layer through the second TEM mode conversion structure 223, the second substrate integrated waveguide structure 230 is connected with the third coplanar waveguide structure 321 through the second TE mode conversion structure 310 on the TOP layer, and then connected with the radio frequency chip MMIC through the microstrip line, or directly connected with the radio frequency chip MMIC through the third coplanar waveguide structure 321.
Next, we will sequentially describe each module structure in the signal layer-through transmission apparatus according to the signal circulation sequence.
Specifically, in this embodiment, the impedance transformer 110 is a microstrip line capable of transforming the input impedance of the array antenna to the characteristic impedance of the coplanar waveguide CPWG1, and for example, it may be a microstrip line including n (n ≧ 1) microstrip lines with a length of one-quarter wavelength and widths of w1, w2. The antenna may be any form of antenna or array of antennas capable of operating suitably in the designated frequency band.
The first coplanar waveguide structure 121, as shown in fig. 9, is composed of an intermediate metal strip 1211, copper foils 1212 on both sides of the intermediate metal strip, two rows of metalized vias 1213 on layers 1 to 2, a high frequency PCB board SUB1 on layer 1, and a copper foil on layer 2. The distance from the middle metal strap 1211 to the copper foils 1212 is equal, and the distance from the middle metal strap 1211 to the metalized vias 1213 on both sides is also equal, and the metalized vias 1213 on both sides do not exceed the copper foil boundary on both sides. The pitch between adjacent metallized vias is ds, the distance between two rows of metallized vias is Wc, the width of the middle metal strip is Wp, and the distances between the middle metal strip and the copper foils on both sides are equal and are both gap.
The first TEM mode conversion structure 130, as shown in fig. 8, includes a first isosceles trapezoid metal patch 131, copper foils on two sides of the metal patch, and metalized via holes penetrating through layers 1 to 3 on the copper foils on two sides, where a hole pitch between adjacent via holes is ds, a distance Ws between two rows of metalized via holes on two sides is not exceeded a boundary between the two copper foils, a distance from a symmetry axis perpendicular to a bottom edge of the first isosceles trapezoid metal patch 131 to the two copper foils is equal, a distance from a symmetry axis perpendicular to the bottom edge of the first isosceles trapezoid metal patch 131 to the two via holes is equal, a left bottom edge of the first isosceles trapezoid metal patch 131 is connected to the first coplanar waveguide structure 121, a width of the left bottom edge of the first isosceles trapezoid metal patch 131 is equal to a width of a microstrip line (i.e., a middle metal strip) in the middle of the first coplanar waveguide structure 121, a width of the right bottom edge of the first isosceles trapezoid metal patch 131 is connected to the first substrate integrated waveguide structure, a width of the right bottom edge is smaller than a distance between the two rows of the first isosceles trapezoid metal foils, a distance between the two rows of the first isosceles trapezoid metal patch 131 is greater than a distance between the two rows of the first coplanar waveguide via holes 121.
The first substrate integrated waveguide structure 210, as shown in fig. 4-8, is composed of TOP layer and m +1 th layer copper foils, first type metalized vias 201 on the 1 st to m +1 th layers on both sides, 1 st to m th layer high frequency boards, second type metalized vias 202 penetrating through the 3 rd to t + r +1 th layers (the metalized vias 202 are shown by dotted lines in fig. 8 and do not actually exist on the TOP layer), third type metalized vias 203 penetrating through the 1 st to m th layers, and rectangular copper foils with widths Wz and lengths Lsw at corresponding positions of the 2 nd to m th layers, wherein the hole pitch of adjacent vias is ds, the front and rear sides of the copper foil removing part of each of the 2 nd to m th layers do not exceed the edges of the vias on both sides, the left side does not exceed the second type metalized vias 202 on the 3 rd to m +1 th layers in TOP layer mode, and the right side does not exceed the third type metalized vias 203 on the 1 st to m +1 th layers.
As shown in fig. 6, the first TE mode conversion structure 221 is composed of a (m + 1) th layer of second isosceles trapezoid metal patch and copper foils on two sides, the distance from a symmetry axis perpendicular to the bottom edge of the second isosceles trapezoid metal patch to the copper foils on two sides is equal, the bottom edge of the left side of the second isosceles trapezoid metal patch is connected to the copper foil on the (m + 1) th layer of the first substrate integrated waveguide structure 210, the width of the bottom edge of the left side is smaller than the distance between the copper foils on two sides, the bottom edge of the right side is connected to the second coplanar waveguide structure 222 on the (m + 1) th layer, the width of the bottom edge of the right side is equal to the width of the middle metal strip of the second coplanar waveguide structure 222, and the distance between the copper foils on two sides of the second isosceles trapezoid metal patch is equal to the distance between the copper foils on two sides of the second coplanar waveguide structure 222. Of course, there is another way to make the distance between the copper foils on both sides of the second isosceles trapezoid metal patch larger than the distance between the copper foils on both sides of the second coplanar waveguide structure 222, as shown in fig. 7.
The second coplanar waveguide is arranged on the (m + 1) th layer and consists of an intermediate metal strip and copper foils on both sides of the intermediate metal strip, and the distance between the copper foils on both sides of the intermediate metal strip is equal, as shown in fig. 6 or 7.
The second TEM mode conversion structure 223 is composed of the (m + 1) th layer of the third isosceles trapezoid metal patch and the copper foils at both sides thereof, the distance from the symmetry axis perpendicular to the bottom side of the third isosceles trapezoid metal patch to the copper foils at both sides is equal, the left side of the third isosceles trapezoid metal patch is connected with the second coplanar waveguide structure at the (m + 1) th layer, the width of the bottom side at the left side is the same as the width of the middle metal band of the second coplanar waveguide structure, the right side thereof is connected with the (m + 1) th layer of copper foils of the second substrate integrated waveguide structure 230, the width of the bottom side at the right side is smaller than the distance between the copper foils at both sides, and the distance between both sides of the third isosceles trapezoid metal patch is greater than the distance between the copper foils at both sides of the second coplanar waveguide structure, as shown in fig. 7. Of course, there is another way to make the distance between the copper foils on both sides of the third isosceles trapezoid equal to the distance between the copper foils on both sides of the second coplanar waveguide structure 222, as shown in fig. 6.
As shown in fig. 4-8, the second substrate integrated waveguide structure 230 is composed of TOP layer and m +1 th layer copper foils, 1 st to m +1 th layers of first type metalized vias 201 on both sides, 1 st to m th layers of high frequency boards, 3 rd to t + r +1 th layers of second type metalized vias 202, 1 st to m th layers of third type metalized vias 203, and etching the 2 nd to m th layers of copper foils with corresponding positions of width Wz and length Lsw, wherein the hole pitch of adjacent vias is ds, the front and rear sides of each layer of the 2 nd to m th layers of removed copper foil portions do not exceed the edges of the vias on both sides, the right side does not exceed the second type metalized vias 202 on the 3 rd to m +1 th layers of TOP layer mode, and the left side does not exceed the third type metalized vias 203 on the 1 st to m th layers. It should be noted that, in fig. 8, the first TE mode transition structure 221, the second coplanar waveguide structure 222, the second TEM mode transition structure 223, etc. are illustrated by dashed lines, which are not actually present on the top layer, but are shown by dashed lines for convenience of understanding the corresponding positions and connections of the other metal layers.
As shown in fig. 8, the second TE mode conversion structure 310 of the TOP layer includes a fourth isosceles trapezoid metal patch 311, copper foils on two sides of the fourth isosceles trapezoid metal patch 311, metalized vias penetrating through the 1 st to 3 rd layers on the copper foils on the two sides, and a copper foil on the 2 nd layer, where the pitch between adjacent metalized vias is ds, the distance between the two rows of metalized vias on the two sides is Ws, the metalized vias on the two sides do not exceed the boundaries of the copper foils on the two sides, the distance from the symmetry axis of the fourth isosceles trapezoid metal patch 311 perpendicular to the bottom edge to the copper foils on the two sides is equal, the left side of the fourth isosceles trapezoid metal patch 311 is connected to SIW2, the width of the bottom edge on the left side is smaller than the distance between the copper foils on the two sides, the right side of the fourth isosceles trapezoid metal patch 311 is connected to the third coplanar waveguide structure 321, the width of the bottom edge on the right side is equal to the width of the middle metal strip of the third coplanar waveguide structure 321, the left side of the copper foils on the two sides of the fourth isosceles trapezoid metal patch 311 is connected to the TOP layer of the second substrate integrated waveguide structure 230, the right side is connected to the third coplanar waveguide structure 321, and the distance between the two rows of the second isosceles trapezoid metal patch 311 is greater than the distance between the two rows of the second metalized vias.
The third coplanar waveguide structure 321 is disposed on the TOP layer, and has a structure substantially the same as that of the first coplanar waveguide structure, which is not described herein again.
Taking the signal transmission device shown in fig. 11 as an example (the top layer is shown in fig. 8, in which the second coplanar waveguide structure 222 is on the 3 rd layer, and the top layer is shown by a dotted line), after simulation optimization is performed by simulation software, the insertion loss result graph of the high-frequency signal transmission device is shown in fig. 13, and the reflection coefficient result graph is shown in fig. 14, and from the graph, it can be seen that the reflection coefficient of the high-frequency signal transmission device (with the length of 16.04mm and the thickness of 1.6 mm) is lower than-10 dB in the frequency band from 68.42GHz to 71.32GHz, and the insertion loss is smaller than 2.5dB, so that the high-frequency signal transmission device has good transmission characteristics.
The signal cross-layer transmission device of another embodiment comprises: the PCB with the (t + r + 1) layers is composed of (t is more than or equal to 3) t layers of high-frequency PCB boards (the 1 st layer to the t th layer of base materials) and r (r is more than or equal to 1) layers of common PCB boards (the t +1 st layer to the t + r th layer of base materials), and is shown in figure 1. At the TOP level, the antenna is connected to a first microstrip line 122 through an impedance transformer 110 as shown in FIG. 9, and to a first substrate integrated waveguide structure 210 composed of 1 st to mth (2. Ltoreq. M. Ltoreq.t) level high frequency plates through a first TEM mode conversion structure 130 as shown in FIGS. 9 and 12. On the (m + 1) th layer, the other end of the first substrate integrated waveguide structure 210 is connected with the second coplanar waveguide structure 222 on the (m + 1) th layer through the first TE mode conversion structure 221, the other end of the second coplanar waveguide structure 222 is connected with the second substrate integrated waveguide structure 230 composed of the high-frequency PCB boards on the (1) th to (m) th layers through the second TEM mode conversion structure 223, the second substrate integrated waveguide structure 230 is connected with the second microstrip line 322 through the second TE mode conversion structure 310 on the TOP layer, and then the second microstrip line 322 is connected with the MMIC of the radio frequency chip. Similarly, the second metalized via is shown by a dotted line in fig. 9, which penetrates through the 3 rd to t + r +1 th metal layers, and thus does not actually exist in the top layer, and similarly, the first TE mode conversion structure 221, the second coplanar waveguide structure 222, the second TEM mode conversion structure 223, and the like are all shown by dotted lines, which do not actually exist in the top layer, but are shown by dotted lines only for facilitating understanding of the corresponding positions and connection relationships thereof in other metal layers.
In this embodiment, the first TEM mode conversion structure 130 includes a first isosceles trapezoid metal patch, a layer 2 copper foil, and a layer 1 high frequency PCB board, where a left bottom edge of the first isosceles trapezoid metal patch is connected to the first microstrip line 122, a width of the left bottom edge of the first isosceles trapezoid metal patch is the same as a width of the first microstrip line, a right bottom edge of the first isosceles trapezoid metal patch is connected to the first substrate integrated waveguide structure 210, and a width of the right bottom edge is smaller than a distance between two rows of metallized via holes on two sides of the first substrate integrated waveguide structure 210.
The first substrate integrated waveguide structure 210, the first TE mode conversion structure 221, the second coplanar waveguide structure 222, the second TEM mode conversion structure 223, the second substrate integrated waveguide structure 230, and the like are substantially the same as those in the previous embodiment, and are not repeated herein for reducing the repetition.
The second TE mode conversion structure in this embodiment includes a fourth isosceles trapezoid metal patch 311, a layer 2 of copper foil, and a layer 1 of high-frequency board, the left bottom edge of the fourth isosceles trapezoid metal patch 311 is connected to the second substrate integrated waveguide structure 230, the width of the left bottom edge of the fourth isosceles trapezoid metal patch 311 is smaller than the distance between two rows of metalized via holes on two sides of the second substrate integrated waveguide structure 230, the right bottom edge of the fourth isosceles trapezoid metal patch 311 is connected to the second microstrip line 322, and the width of the right bottom edge of the fourth isosceles trapezoid metal patch 311 is the same as the width of the second microstrip line 322.
The signal layer-crossing transmission device of each embodiment of the invention comprises (t + r + 1) layers of PCBs (t is more than or equal to 3) t layers of high-frequency PCB boards (the 1 st layer to the t th layer of base materials) and r (r is more than or equal to 1) layers of common PCB boards (the t +1 st layer to the t + r th layer of base materials), wherein a TOP layer antenna is connected with a first coplanar waveguide structure (or a first microstrip line) through an impedance converter, and is connected with one end of a first substrate integrated waveguide structure on the TOP layer through a first TEM mode conversion structure, the first substrate integrated waveguide structure is arranged at the other end of the m +1 th layer and is connected with a second coplanar waveguide structure on the m +1 th layer through a first TE mode conversion structure, and the second coplanar waveguide structure is connected with one end of a second substrate integrated waveguide structure on the m +1 th layer through a second TEM mode conversion structure, the second substrate integrated waveguide structure is connected with a third coplanar waveguide structure (or a second microstrip line) at the other end of the TOP layer through a second TE mode conversion structure, and then is connected with the MMIC, electromagnetic waves are transmitted in the first microstrip line and/or the first coplanar waveguide in a TEM mode, then the TEM mode is converted into the TE mode through the TEM mode conversion structure and transmitted in the first substrate integrated waveguide structure, then the TE mode is converted into the TEM mode through the first TE mode conversion structure and transmitted in the second coplanar waveguide structure on the (m + 1) th layer, then the TEM mode is converted into the TE mode through the second TEM mode conversion structure and transmitted in the second substrate integrated waveguide structure, and finally the TE mode is converted into the TEM mode through the second TE mode conversion structure and transmitted in the third coplanar waveguide structure and/or the second microstrip line, high-frequency signal transmission from the TOP layer to the (m + 1) th layer and then to the TOP layer is realized, so that the problem of radio frequency routing interference of the TOP layer is solved.
In addition, the invention also provides an antenna system, which comprises an antenna, the signal through-layer transmission device and a radio frequency chip, wherein:
the antenna and the radio frequency chip are both arranged on the top layer of the signal cross-layer transmission device, the antenna is connected with a first top layer signal transmission module of the signal cross-layer transmission device, and the radio frequency chip is connected with a second top layer signal transmission module of the signal cross-layer transmission device; and the signal received by the antenna at the top layer is transmitted to the radio frequency chip at the top layer through the signal through-layer transmission device, so that the signal transmission between the antenna and the radio frequency chip is realized.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that it is obvious to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and these modifications and improvements should also be considered as the protection scope of the present invention.

Claims (10)

1. A signal cross layer transmission apparatus, comprising: the transmission substrate is formed by sequentially stacking t layers of first plates and r layers of second plates; the upper surface and the lower surface of each layer of dielectric substrate are respectively covered with a metal layer, and the transmission matrix has t + r +1 metal layers from top to bottom; wherein t is more than or equal to 3, r is more than or equal to 1; the first plate is a high-frequency PCB plate, and the second plate is a high-frequency PCB plate or a common PCB plate; a first top signal transmission module, a substrate integrated waveguide module and a second top signal transmission module are integrated on the transmission substrate; wherein: the first top layer signal transmission module is arranged on the top layer of the transmission base body and used for receiving electromagnetic wave signals to be transmitted and transmitting the electromagnetic wave signals to the substrate integrated waveguide module; the substrate integrated waveguide module is used for receiving the electromagnetic wave signals transmitted by the first top signal transmission module, transmitting the electromagnetic wave signals in the longitudinal direction of the transmission substrate and returning the electromagnetic wave signals to the second top signal transmission module of the top layer; the second top layer signal transmission module is arranged on the top layer of the transmission base body and used for receiving the electromagnetic wave signals transmitted by the substrate integrated waveguide module and transversely transmitting the electromagnetic wave signals to the radio frequency chip;
the substrate integrated waveguide module includes: one end of the first substrate integrated waveguide structure is arranged on the top layer of the transmission matrix and is connected with the first top layer signal transmission module; the other end of the first substrate integrated waveguide structure is arranged on the (m + 1) th metal layer of the transmission substrate and is connected with the intermediate layer signal transmission submodule; the electromagnetic wave signal is transmitted from the 1 st metal layer to the (m + 1) th metal layer; wherein m is more than or equal to 2 and less than or equal to t; the middle layer signal transmission submodule is used for receiving the electromagnetic wave signals transmitted by the first substrate integrated waveguide structure and transmitting the electromagnetic wave signals on the (m + 1) th metal layer of the transmission substrate; one end of the second substrate integrated waveguide structure is arranged on the (m + 1) th metal layer and is connected with the middle layer signal transmission submodule; the other end of the second substrate integrated waveguide structure is arranged on the top layer and is connected with the second top layer signal transmission module; the second top layer signal transmission module is used for receiving the electromagnetic wave signals transmitted by the middle layer signal transmission sub-module and transmitting the electromagnetic wave signals to the top layer from the (m + 1) th metal layer; the first substrate integrated waveguide structure and the second substrate integrated waveguide structure are respectively arranged on two sides of the middle layer signal transmission submodule; the first substrate integrated waveguide structure and the second substrate integrated waveguide structure each include the following structures within a region in which they are located on the transmission substrate: the first metal layer 1, the (m + 1) th metal layer, two parallel rows of first metalized via holes penetrating through the (1) th to (m + 1) th metal layers, a second metalized via hole penetrating through the (3) th to (t + r + 1) th metal layers and a third metalized via hole penetrating through the (1) th to (m) th metal layers; the sizes of the three metallized through holes and the hole intervals of the adjacent holes are equal; and a rectangular area defined by the first-type metalized via hole, the second-type metalized via hole and the third-type metalized via hole on the metal layer of the 3 rd layer is etched to form a coupling caliber, and the metal layer of the 2 nd layer and the metal layers of the 4 th to the m th layers are etched to form the same coupling calibers corresponding to the metal layer of the 3 rd layer up and down.
2. The signal cross-layer transmission device according to claim 1, wherein the middle layer signal transmission submodule comprises: the first TE mode conversion structure, the second coplanar waveguide structure and the second TEM mode conversion structure are connected in sequence; wherein: the first TE mode conversion structure is used for converting the electromagnetic wave signals transmitted by the first substrate integrated waveguide structure from a TE mode to a TEM mode; the second coplanar waveguide structure is used for receiving the electromagnetic wave signal converted by the first TE mode conversion structure and transmitting the electromagnetic wave signal to the second TEM mode conversion structure; and the second TEM mode conversion structure is used for converting the electromagnetic wave signals transmitted by the second coplanar waveguide structure from a TEM mode to a TE mode and then transmitting the electromagnetic wave signals to the second substrate integrated waveguide structure.
3. The apparatus according to claim 2, wherein the first TE mode conversion structure comprises: a second isosceles trapezoid metal patch formed on the (m + 1) th metal layer through etching, wherein a second bottom edge of the second isosceles trapezoid metal patch is connected with the second coplanar waveguide structure; the first bottom edge of the second isosceles trapezoid metal patch is connected with the first substrate integrated waveguide structure; the length of a second bottom edge of the second isosceles trapezoid metal patch is the same as the width of the middle metal strip of the second coplanar waveguide structure; the second TEM mode conversion structure comprises: a third isosceles trapezoid metal patch formed on the (m + 1) th metal layer in an etching manner, wherein the first bottom edge of the third isosceles trapezoid metal patch is connected with the second coplanar waveguide structure; a second bottom edge of the third isosceles trapezoid metal patch is connected with the second substrate integrated waveguide structure; the length of the first bottom edge of the third isosceles trapezoid metal patch is the same as the width of the middle metal strip of the second coplanar waveguide structure.
4. A signal through layer transmission device according to any one of claims 1-3, wherein the first top signal transmission module comprises: impedance converter, first transmission line and the first TEM mode conversion structure that connects gradually, wherein: the impedance converter comprises n microstrip lines with the length of one quarter of wavelength and the width gradually changed; wherein n is more than or equal to 1; the impedance transformer is used for impedance matching; the first transmission line is used for transmitting electromagnetic wave signals transmitted by the antenna through the impedance transformer; the first TEM mode conversion structure is used for converting the transmission mode of the high-frequency electromagnetic waves transmitted by the first transmission line from a TEM mode to a TE mode and then transmitting the transmission mode to the substrate integrated waveguide module.
5. A signal through-layer transmission device according to claim 4, wherein the first transmission line is a first coplanar waveguide structure; a row of metallized through holes penetrating through the 1 st to 2 nd metal layers are respectively arranged on the metal surfaces at two sides of the middle metal conduction band of the first coplanar waveguide structure; the first TEM mode conversion structure comprises: a first isosceles trapezoid metal patch formed on the first metal layer in an etching mode, wherein a second bottom edge of the first isosceles trapezoid metal patch is connected with a middle metal conduction band of the first coplanar waveguide structure; the first bottom edge of the first isosceles trapezoid metal patch is connected with the substrate integrated waveguide; the length of the second bottom edge of the first isosceles trapezoid metal patch is the same as the width of the middle metal belt of the first coplanar waveguide structure; the metal strips on two sides of the first isosceles trapezoid metal patch and the metal strips on the two sides are respectively and uniformly provided with a row of metalized through holes penetrating through the 1 st to 3 rd metal layers; the metal strips on two sides of the first isosceles trapezoid metal patch are respectively connected with the metal surfaces on two sides of the corresponding first coplanar waveguide structure, the distances from the symmetry axis of the first isosceles trapezoid metal patch perpendicular to the bottom edge to the metal strips on two sides of the first isosceles trapezoid metal patch are equal, and the distances from the symmetry axis of the first isosceles trapezoid metal patch perpendicular to the bottom edge to the metallized through holes on two sides of the first isosceles trapezoid metal patch are equal; the length of a first bottom edge of the first isosceles trapezoid metal patch is smaller than the distance between the metal belts on two sides of the first isosceles trapezoid metal patch; and a 2 nd metal layer as a ground metal plate.
6. The device according to claim 4, wherein the first transmission line is a first microstrip line; the first TEM mode conversion structure comprises: the second bottom edge of the first isosceles trapezoid metal patch is connected with the first microstrip line; the first bottom edge of the first isosceles trapezoid metal patch is connected with the substrate integrated waveguide; the length of the second bottom edge of the first isosceles trapezoid metal patch is the same as the width of the first microstrip line.
7. A signal through layer transmission device according to claim 3, wherein the second top signal transmission module comprises: the second TE mode conversion structure and the second transmission line are connected in sequence; wherein: the second TE mode conversion structure is configured to convert the electromagnetic wave signal transmitted by the substrate integrated waveguide module from a TE mode to a TEM mode, and transmit the electromagnetic wave signal to the second transmission line; and the second transmission line is used for transmitting the electromagnetic wave signals to the radio frequency chip on the top layer in a TEM mode.
8. A signal cross-layer transmission device according to claim 7, wherein the second transmission line is a third coplanar waveguide structure; a row of metallized through holes penetrating through the metal layers from 1 st to 2 nd are respectively arranged on the metal surfaces on two sides of the middle metal conduction band of the third coplanar waveguide structure; the second TE mode conversion structure includes: a fourth isosceles trapezoid metal patch formed on the top metal layer in an etching manner, wherein a second bottom edge of the fourth isosceles trapezoid metal patch is connected with the third coplanar waveguide structure; the first bottom edge of the fourth isosceles trapezoid metal patch is connected with the substrate integrated waveguide module; the length of the second bottom edge of the fourth isosceles trapezoid metal patch is the same as the width of the middle metal strip of the third coplanar waveguide structure; the metal strips on the two sides of the fourth isosceles trapezoid metal patch and the metal strips on the two sides are respectively and uniformly provided with a row of metalized through holes penetrating through the 1 st to 3 rd metal layers; the metal strips on two sides of the fourth isosceles trapezoid metal patch are respectively connected with the metal surfaces on two sides of the corresponding third coplanar waveguide structure, the distances from the symmetry axis of the fourth isosceles trapezoid metal patch perpendicular to the bottom edge to the metal strips on two sides of the fourth isosceles trapezoid metal patch are equal, and the distances from the symmetry axis of the fourth isosceles trapezoid metal patch perpendicular to the bottom edge to the metallized through holes on two sides of the fourth isosceles trapezoid metal patch are equal; the length of the first bottom edge of the fourth isosceles trapezoid metal patch is smaller than the distance between the metal belts on two sides of the fourth isosceles trapezoid metal patch; and a 2 nd metal layer as a ground metal plate.
9. The apparatus according to claim 7, wherein the second transmission line is a second microstrip line; the second TE mode conversion structure includes: a fourth isosceles trapezoid metal patch positioned on the top metal layer, wherein a second bottom edge of the fourth isosceles trapezoid metal patch is connected with the second microstrip line; the first bottom edge of the second isosceles trapezoid metal patch is connected with the substrate integrated waveguide; the length of the second bottom edge of the fourth isosceles trapezoid metal patch is the same as the width of the second microstrip line.
10. An antenna system comprising an antenna, the signal cross layer transmission device of any one of claims 1-9, and a radio frequency chip; wherein: the antenna and the radio frequency chip are both arranged on the top layer of the signal transmission device, the antenna is connected with a first top layer signal transmission module of the signal transmission device, and the radio frequency chip is connected with a second top layer signal transmission module of the signal transmission device; and the signal received by the antenna at the top layer is transmitted to the radio frequency chip at the top layer through the signal through-layer transmission device, so that the signal transmission between the antenna and the radio frequency chip is realized.
CN202210508525.0A 2022-05-10 2022-05-10 Signal cross-layer transmission device and antenna system Active CN114784467B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1923950A1 (en) * 2006-11-17 2008-05-21 Siemens S.p.A. SMT enabled microwave package with waveguide interface
CN103165966A (en) * 2011-12-14 2013-06-19 索尼公司 Waveguide, interposer substrate including the same, module, and electronic apparatus
CN203660032U (en) * 2013-11-14 2014-06-18 中国科学院上海天文台 Coplanar waveguide microstrip converter
CN104201452A (en) * 2014-08-29 2014-12-10 上海斐讯数据通信技术有限公司 Radiofrequency filter device structure, formation method and mobile terminal

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1923950A1 (en) * 2006-11-17 2008-05-21 Siemens S.p.A. SMT enabled microwave package with waveguide interface
CN103165966A (en) * 2011-12-14 2013-06-19 索尼公司 Waveguide, interposer substrate including the same, module, and electronic apparatus
CN203660032U (en) * 2013-11-14 2014-06-18 中国科学院上海天文台 Coplanar waveguide microstrip converter
CN104201452A (en) * 2014-08-29 2014-12-10 上海斐讯数据通信技术有限公司 Radiofrequency filter device structure, formation method and mobile terminal

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