CN114770372B - Composite surface pattern polishing pad with uniform material removal function - Google Patents

Composite surface pattern polishing pad with uniform material removal function Download PDF

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Publication number
CN114770372B
CN114770372B CN202210603668.XA CN202210603668A CN114770372B CN 114770372 B CN114770372 B CN 114770372B CN 202210603668 A CN202210603668 A CN 202210603668A CN 114770372 B CN114770372 B CN 114770372B
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China
Prior art keywords
polishing pad
material removal
protruding
pattern
protruding blocks
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CN202210603668.XA
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Chinese (zh)
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CN114770372A (en
Inventor
侯天逸
李军
张万一
朱永伟
牛凤丽
宗傲
范永见
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Nanjing University Of Aeronautics And Astronautics Wuxi Research Institute
Nanjing University of Aeronautics and Astronautics
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Nanjing University Of Aeronautics And Astronautics Wuxi Research Institute
Nanjing University of Aeronautics and Astronautics
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/10Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working

Abstract

The invention discloses a polishing pad with a composite surface pattern and a uniform material removal function, which belongs to the field of ultra-precise machining, wherein the surface of the polishing pad is provided with protruding blocks distributed according to design requirements, and each protruding block is provided with small patterns distributed according to the design requirements to form a composite structure surface pattern; through the arrangement design of the protruding blocks on the surface of the polishing pad, the removal efficiency of the polishing pad at different radius positions is the same, and the material removal efficiency of the whole polishing pad is equal from a macroscopic level; the distribution density design of the composite small patterns on the surface of the protruding block ensures that the material contact distances of the inner and outer small patterns on the same protruding block are as equal as possible, and the equalization of the material removal efficiency on a single protruding block is realized from a microscopic level; the invention combines macroscopic effect and microscopic effect, so that the uniformity of material removal of a workpiece in the processing process is greatly improved, and the problem of uneven material removal of the workpiece in polishing processing is solved.

Description

Composite surface pattern polishing pad with uniform material removal function
Technical Field
The invention belongs to the field of ultra-precise machining, and particularly relates to a composite surface pattern polishing pad with a uniform material removal function.
Background
Chemical Mechanical Polishing (CMP) is mainly used in the fabrication of integrated circuits, semiconductor materials, and optical parts, and plays an important role in planarizing the surface of a workpiece. In the CMP process, the polishing pad plays a role in bearing the polishing liquid, rapidly removing chips and assisting the flow of the polishing liquid. However, when the existing polishing pad is used for processing a plane, the inner side line and the outer side line of the polishing pad have different speeds, so that the material removal rate is uneven, the material removal is difficult to be uniform, the flatness of the surface of a workpiece is poor, and particularly for a large-size workpiece, the uneven material removal problem is obvious.
The existing polishing pad surface morphology design is mainly based on the angles of improving the bearing capacity of polishing liquid, rapidly removing chips, efficiently removing materials and the like. Chinese patent CN110883684B discloses a polishing pad with wave-shaped grooves in front projection, which has a high polishing liquid carrying capacity, improves chemical action in chemical mechanical polishing, and improves polishing quality. Chinese patent CN107953243B discloses a polishing pad with quick chip removal function, through the design of surface groove, realize the quick discharge of processing sweeps, reduce the influence of sweeps to the course of working, reduce the damage of work piece, chinese patent CN101234481B discloses a recess design that can make the polishing solution remain on the polishing pad as far as possible, reduce the loss of polishing solution in the polishing process, chinese patent CN101327577B discloses a evenly worn polishing pad, through setting up the annular district of three different densities on its machined surface, can guarantee the face type precision of polishing pad for a long time, avoid the trouble of repeatedly repairing the polishing pad, can improve production efficiency and reduce manufacturing cost greatly. The shape design of the polishing pad is mainly used for realizing the functions of rapid scraping, high-efficiency material removal and the like, and the problem of uneven material removal caused by the shape of the surface of the polishing pad is not considered.
Disclosure of Invention
The invention provides a composite surface pattern polishing pad with a uniform material removal function, which solves the problems that even material removal of a workpiece and poor surface flatness of the workpiece are difficult to realize during processing.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the polishing pad with the composite surface pattern has the function of uniform material removal, wherein the surface of the polishing pad is provided with protruding blocks, and each protruding block is provided with a small pattern to form a composite structure surface pattern;
the protruding blocks on the surface of the polishing pad are radially and circumferentially dispersed by taking the center of the polishing pad as a radial point, gaps between adjacent layers of the protruding blocks in the radial direction are equal, the gaps are 4-8mm, the number of protruding blocks on the outermost layer is N=2pi R/(3-3.5) q, the number of protruding blocks on any layer is n=N×R/R, the protruding blocks on the same layer are uniformly distributed around the center of the polishing pad, wherein R is the radius of the polishing pad, R is the radius of any layer, N is the number of protruding blocks on the outermost radius, q is the equivalent length of the protruding blocks, the definition of the equivalent length is the maximum length of straight lines passing through the protruding blocks, for example, the equivalent length of circular protruding blocks is the diameter of the protruding blocks;
each protruding block is provided with small patterns with different densities along the tangential direction of the polishing pad radius, and the gap between the small patterns tangential around the polishing pad radius on any radius is [ (2-2.25) (r) 0 /R)*e]The small patterns between different radii are equally spaced and exist only at the location coincident with the protruding block, where R is the polishing pad radius, e is the equivalent length of the individual small patterns, defined as the maximum length of a straight line through the small patterns, e.g., the equivalent length of a circular small pattern is the diameter of the small pattern, R 0 Is the radius of the layer where any small pattern is located.
Further, the area of the single protruding block on the polishing pad is fixed to be 60-150 mm 2 The shape of the protruding block can be one or a combination of a plurality of regular triangles, squares, regular pentagons, regular hexagons, circles and the like, and the height of the single protruding block is 6-12 mm;
further, each protruding block is designed with a small pattern, and the pattern can be one or a combination of a plurality of triangle, square, regular pentagon, regular hexagon, circle and the like according to the requirements of polishing the workpiece.
Further, the small pattern area on the protruding block is 1-4 mm 2 The height of the protruding pattern is 0.4-0.7. 0.7 mm, and the adjacent gaps between the small patterns on the protruding blocks in the radial direction of the polishing pad are 1-2.5 mm.
Further, the shape of the protruding block on the polishing pad and the shape of the small pattern on the protruding block can be combined in a one-to-one, one-to-many, and many-to-many modes.
The beneficial effects are that: the invention provides a composite surface pattern polishing pad with a uniform material removal function, which is used for solving the problems of uneven material removal and poor flatness of a workpiece surface by the polishing pad during polishing under the same conditions when being used for polishing, thereby achieving the purpose of uniform material removal;
as is known, the more the protruding blocks on the outer side of the polishing pad have higher linear velocity, the number of the protruding blocks on the outer side is reduced according to the same contact path principle on the polishing pad with the composite pattern, so that the total paths of the protruding blocks on different radiuses, which are in contact with a workpiece, are the same in the same time, the removal efficiency of the polishing pad at the positions of different radiuses is the same, the uniform material removal efficiency of the whole polishing pad is realized from a macroscopic level, and the purpose of uniform material removal is further achieved;
the linear speeds of the inner side and the outer side of the same protruding block with no pattern design can also be different in microscopic angle, and the density of the small patterns on the outer side of the single protruding block is reduced by the design required by the invention, so that the material contact distances of the small patterns on the inner side and the outer side of the same protruding block are as equal as possible in the same time, the material removal efficiency of the whole polishing pad is equal from the microscopic level, and the purpose of uniform material removal is further achieved;
according to the polishing pad with the composite surface pattern, the special design of the arrangement of the protruding blocks and the small pattern design on each protruding block are combined to form the surface pattern with the composite structure, and the macroscopic effect and the microscopic effect are combined, so that the uniformity of material removal of a workpiece is greatly improved;
in the polishing process of the polishing pad with the composite surface patterns, the gaps between the small patterns are distributed on the protruding blocks according to the requirements, and the flowing polishing liquid exists due to centrifugal force, so that falling abrasive particles or scraps generated by processing can be taken away rapidly, the purpose of rapid chip removal is achieved, meanwhile, the polishing liquid is in more sufficient contact with a workpiece, heat dissipation can be carried out more effectively, and the stability of the polishing process is improved;
in the polishing process, the polishing solution is guided to stably flow according to the small pattern gap direction by utilizing the centrifugal force, so that the polishing solution on the surface of a processed object can be continuously updated, the continuous and effective performance of the chemical action is maintained, the mechanical action and the chemical action are better matched, and the surface quality of a workpiece is improved.
Drawings
FIG. 1 is a schematic top view of a polishing pad according to an embodiment of the present invention;
FIG. 2 is a detailed view of a small pattern on a pad protrusion block in accordance with an embodiment of the present invention;
FIG. 3 is a schematic view of a combination of protrusions having a partially different shape of the surface of a polishing pad according to an embodiment of the present invention;
FIG. 4 is a graph showing the removal of the inner and outer surfaces of a workpiece in use of the polishing pad (b) according to the embodiment of the present invention and the conventional polishing pad (a).
Detailed Description
The invention is described in detail below with reference to the attached drawings and the specific embodiments:
as shown in FIG. 1, a polishing pad with a composite surface pattern having a uniform material removal function, wherein the polishing pad surface is provided with protruding blocks distributed according to design requirements, and each protruding block is provided with small patterns distributed according to design requirements to form a composite structure surface pattern;
the protruding blocks on the surface of the polishing pad are radially and circumferentially dispersed by taking the center of the polishing pad as a radial point, gaps between adjacent layers of the protruding blocks in the radial direction are equal, the gaps are 4-8mm, the number of protruding blocks on the outermost layer is N=2pi R/(3-3.5) q, the number of protruding blocks on any layer is n=N×R/R, the protruding blocks on the same radius are uniformly distributed around the center of the polishing pad, wherein R is the radius of the polishing pad, R is the radius of any layer, N is the number of protruding blocks on the outermost layer, q is the equivalent length of the protruding blocks, the equivalent length is defined as the maximum length of straight lines passing through the protruding blocks, for example, the equivalent length of circular protruding blocks is the diameter of the protruding blocks.
The area of the single protruding block on the polishing pad is fixed to be 60-150 mm 2 The shape of the protruding block can be one or a combination of a plurality of regular triangles, squares, regular pentagons, regular hexagons, circles and the like, and the height of the single protruding block is 6-12 mm.
The protruding blocks on the surface of the polishing pad are distributed on the surface of the polishing pad in the polishing process, so that the removal amount of the inner side and the outer side of the polishing pad is kept as consistent as possible in the same time, the purpose of uniform material removal is achieved, the irregular abrasive grain cutting in the processing process can be increased through the combination of the protruding blocks with various shapes, the surface quality is improved, and the processing efficiency is improved.
As shown in FIG. 2, each of the protruding blocks has small patterns having different densities in the tangential direction of the polishing pad radius, and the gap between the small patterns at any radius tangential to the polishing pad radius is [ (2-2.25) (r) 0 /R)*e]The small patterns between different radii are equally spaced and exist only at the location coincident with the protruding block, where R is the polishing pad radius, e is the equivalent length of the individual small patterns, defined as the maximum length of a straight line through the small patterns, e.g., the equivalent length of a circular small pattern is the diameter of the small pattern, R 0 Is the radius of the layer where any small pattern is located. The small pattern area on the protruding block is 1-4 mm 2 The height of the pattern protruding is 0.4-0.7. 0.7 mm, and the radial gap between the small patterns is 1-2.5 mm.
The pattern on each protruding block can be one or a combination of a plurality of triangles, squares, regular pentagons, regular hexagons, circles and the like according to the requirements of polishing workpieces; as shown in fig. 3, the shape of the protruding blocks on the polishing pad and the shape of the small patterns thereon can be combined in a plurality of forms, one-to-one, one-to-many, and many-to-many.
The polishing pad and the traditional polishing pad are respectively used for polishing the same material, the diameters of the two polishing pads are 300mm, the appearance of the used traditional polishing pad is characterized in that the protruding blocks are circular, no small patterns are designed, the protruding blocks are arranged in a fully equidistant manner, the distances among the protruding blocks are equal, and the distance is 5mm; the polishing pad has the morphological characteristics that the design scheme that the shape of the protruding block is circular and the small pattern is square is selected, and the specific design is arranged according to the requirements; simulation comparison of removal of the inner and outer sides of the workpiece surface in use as shown in fig. 4: the polishing pad has the advantages that the surface removal amount of the workpiece is more than that of the workpiece after the polishing of the traditional polishing pad, and the surface removal amount of the workpiece after the polishing of the polishing pad is more uniform.
The small patterns are distributed on each protruding block on the polishing pad according to the requirements, so that the density of the small patterns on the outer side of the protruding blocks is reduced, the material removal efficiency on the same protruding block is as equal as possible in the same time, the overall material removal efficiency of the polishing pad is equal from the microcosmic level, and the overall material removal uniformity is improved.
The foregoing is only illustrative of the preferred embodiments of the present invention, and it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations may be made hereto without departing from the principles and spirit of the invention as defined by the appended claims.

Claims (9)

1. The polishing pad with the composite surface pattern has the function of uniform material removal, and is characterized in that the surface of the polishing pad is provided with protruding blocks, and each protruding block is provided with a small pattern to form a composite structure surface pattern;
each protruding block is provided with small patterns with different densities along the radial direction of the polishing pad, and the gap between the small patterns tangential to the radial direction of the polishing pad on any radius is [ (2-2.25) (r) 0 /R)*e]The gaps of the small patterns between different radiuses are equal, wherein R is the radius of the polishing pad, e is the equivalent length of a single small pattern, the equivalent length of a single small pattern is the maximum length of a straight line passing through the small pattern, R 0 Radius of the layer where any small pattern is located;
the protruding blocks on the surface of the polishing pad are radially and circumferentially dispersed by taking the center of the polishing pad as a radial point, gaps between adjacent layers of the protruding blocks in the radial direction of the polishing pad are equal, the number of protruding blocks on the outermost layer is N=2pi R/(3-3.5) q, the number of protruding blocks on any layer is n=N×R/R, the protruding blocks on the same layer are uniformly distributed around the center of the polishing pad, wherein R is the radius of the polishing pad, R is the radius of any layer, N is the number of protruding blocks on the outermost radius, q is the equivalent length of the protruding blocks, and the equivalent length of the protruding blocks is the maximum length of straight lines passing through the protruding blocks.
2. The composite surface pattern polishing pad with uniform material removal according to claim 1, wherein the gap between radially adjacent layers of said protruding blocks is 4-8mm.
3. The composite surface pattern polishing pad with uniform material removal according to claim 1 or 2, wherein the area of individual protruding blocks on said polishing pad is 60-150 mm 2 The height of the single protruding block is 6-12 mm.
4. The composite surface pattern polishing pad with uniform material removal function according to claim 3, wherein said protruding block shape is one or a combination of a plurality of regular triangle, square, regular pentagon, regular hexagon, circle.
5. The composite surface pattern polishing pad with uniform material removal according to claim 1, wherein the small pattern on the protruding block has a gap between adjacent layers in the radial direction of the polishing pad of 1-2.5. 2.5 mm.
6. The composite surface pattern polishing pad with uniform material removal function according to claim 1 or 5, wherein the small pattern shape on the protruding block is set according to the polishing work piece requirement.
7. The composite surface pattern polishing pad with uniform material removal according to claim 6, wherein the small pattern on the protruding block has a shape of one or more of triangle, square, regular pentagon, regular hexagon, circle.
8. The device of claim 7 having a uniformA composite surface pattern polishing pad with uniform material removal function, characterized in that the small pattern area on the protruding block is 1-4 mm 2 The height is 0.4-0.7. 0.7 mm.
9. The composite surface pattern polishing pad with uniform material removal according to claim 7, wherein the protruding block shapes on said polishing pad and the small pattern shapes on said protruding block are a one-to-one, one-to-many, many-to-many, multiple shape combinations.
CN202210603668.XA 2022-05-30 2022-05-30 Composite surface pattern polishing pad with uniform material removal function Active CN114770372B (en)

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US959054A (en) * 1909-03-08 1910-05-24 Charles Glover Grinding and polishing disk.
US5020283A (en) * 1990-01-22 1991-06-04 Micron Technology, Inc. Polishing pad with uniform abrasion
US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
KR20010002470A (en) * 1999-06-15 2001-01-15 고석태 groove-pattern of polishing pad for chemical-mechanical polishing equipment
USRE37997E1 (en) * 1990-01-22 2003-02-18 Micron Technology, Inc. Polishing pad with controlled abrasion rate
JP2005183712A (en) * 2003-12-19 2005-07-07 Toyo Tire & Rubber Co Ltd Polishing pad, method of polishing, semiconductor device and its manufacturing method
CN1713966A (en) * 2001-08-08 2005-12-28 拉姆研究公司 Platen assembly having a topographically altered platen surface
CN101134292A (en) * 2006-08-30 2008-03-05 罗门哈斯电子材料Cmp控股股份有限公司 Cmp pad having overlaid constant area spiral grooves
TW201223707A (en) * 2010-12-13 2012-06-16 San Fang Chemical Industry Co Fractals polishing pad and polishing device thereof
WO2014051104A1 (en) * 2012-09-28 2014-04-03 富士紡ホールディングス株式会社 Polishing pad

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7344432B2 (en) * 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US20090011679A1 (en) * 2007-04-06 2009-01-08 Rajeev Bajaj Method of removal profile modulation in cmp pads

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US959054A (en) * 1909-03-08 1910-05-24 Charles Glover Grinding and polishing disk.
US5020283A (en) * 1990-01-22 1991-06-04 Micron Technology, Inc. Polishing pad with uniform abrasion
US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
USRE37997E1 (en) * 1990-01-22 2003-02-18 Micron Technology, Inc. Polishing pad with controlled abrasion rate
KR20010002470A (en) * 1999-06-15 2001-01-15 고석태 groove-pattern of polishing pad for chemical-mechanical polishing equipment
CN1713966A (en) * 2001-08-08 2005-12-28 拉姆研究公司 Platen assembly having a topographically altered platen surface
JP2005183712A (en) * 2003-12-19 2005-07-07 Toyo Tire & Rubber Co Ltd Polishing pad, method of polishing, semiconductor device and its manufacturing method
CN101134292A (en) * 2006-08-30 2008-03-05 罗门哈斯电子材料Cmp控股股份有限公司 Cmp pad having overlaid constant area spiral grooves
TW201223707A (en) * 2010-12-13 2012-06-16 San Fang Chemical Industry Co Fractals polishing pad and polishing device thereof
WO2014051104A1 (en) * 2012-09-28 2014-04-03 富士紡ホールディングス株式会社 Polishing pad

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