CN114756079A - Single event effect radiation resistant reinforced band gap reference circuit - Google Patents
Single event effect radiation resistant reinforced band gap reference circuit Download PDFInfo
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- CN114756079A CN114756079A CN202210394652.2A CN202210394652A CN114756079A CN 114756079 A CN114756079 A CN 114756079A CN 202210394652 A CN202210394652 A CN 202210394652A CN 114756079 A CN114756079 A CN 114756079A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention relates to a single event effect radiation resistant reinforced band-gap reference circuit, wherein R1, MN1, MN2, MP1, MP2, MN3, MN4 and D1-D4 are used as starting circuits and provide bias current for the band-gap reference circuit; MP3, MP6, MP7, MN5, MN6, D5-D8, C1-C2, R2, MN7, MP4, MP5 and MN8 form an operational amplifier, the MP3 and MP4 provide bias for the operational amplifier through the current of a current mirror MP1, MP5 also provides bias for a subsequent reference voltage generation part through the current mirror, and the gate potentials of an input terminal of the operational amplifier to MP6 and MP7 are respectively connected with emitters of R3 and BP 3; the R4, R5, R3, BP1 to BP3, D9, R6, and C3 constitute a bandgap reference voltage generating circuit. The band-gap reference circuit realizes good radiation resistance through smaller area and power consumption overhead, reduces the lowest working voltage of the circuit, improves the application range of the circuit, and improves the anti-SET performance by utilizing the technology of adding diodes and capacitors at important nodes.
Description
Technical Field
The invention relates to a radiation hardening integrated circuit technology, in particular to a single event effect radiation hardening band gap reference circuit.
Background
The bandgap reference circuit is used to generate a voltage reference that has a small temperature dependence. The theoretical basis is that two voltage signals with opposite temperature coefficients and basically equal absolute values are superposed to obtain a voltage with an approximate zero temperature coefficient. The negative temperature coefficient voltage is realized by adopting the base electrode-emitter electrode PN junction voltage of a PNP triode; two PNP tubes working under different current densities are adopted, and the difference of the base electrode-emitter voltage of the two PNP tubes forms positive temperature coefficient voltage.
The invention belongs to an analog integrated circuit, and the radiation hardening resistance technology of the analog integrated circuit is mainly used for improving the Single Event Transient (SET) resistance of the circuit. The single-particle transient phenomenon is a phenomenon that the parasitic current of a device is changed smoothly due to the bombardment of high-energy particles in space, and the voltage at a node in an integrated circuit is induced to have instantaneous voltage deviation (voltage spike). The event mainly occurs in an analog integrated circuit, and the voltage of an important node can generate large deviation to cause abnormal operation and even failure of the circuit.
In the prior art, a Cascade structure is adopted, so that the voltage headroom is increased, the lowest working voltage of the circuit is limited, and the application range of the circuit is limited; the circuit improves the single-particle transient resistance by adding a power supply to a ground circuit, so that the whole power consumption overhead of the circuit is greatly increased, and the current of a single module is in mA level under 5V power supply; at the same time, in order to obtain a large current I +The area of the NPN triode must be large, so that great layout area overhead is brought, and the circuit cost is increased.
Disclosure of Invention
In order to solve the technical problem, the single event effect radiation resistant reinforced band gap reference circuit comprises PMOS transistors MP 1-MP 7; NMOS transistors MN1 to MN 8; diodes D1-D9; PNP triode BP 1-BP 3; resistors R1-R6; capacitors C1-C3; wherein R1, MN1, MN2, MP1, MP2, MN3, MN4 and D1-D4 are starting circuits and provide bias current for the band-gap reference circuit; MP3, MP6, MP7, MN5, MN6, D5-D8, C1-C2, R2, MN7, MP4, MP5 and MN8 form an operational amplifier, the MP3 and MP4 provide bias for the operational amplifier through the current of a current mirror MP1, MP5 also provides bias for a subsequent reference voltage generation part through the current mirror, and the gate potentials of an input terminal of the operational amplifier to MP6 and MP7 are respectively connected with emitters of R3 and BP 3; the R4, R5, R3, BP 1-BP 3, D9, R6 and C3 form a band gap reference voltage generating circuit, wherein the voltage difference between the base electrode and the emitter electrode of the BP1 and the BP3 generates a voltage signal with a positive temperature coefficient, the forward PN junction of the base electrode and the emitter electrode of the BP3 generates a voltage with a negative temperature coefficient, and the voltage are added to obtain a reference voltage independent of the temperature.
In an embodiment of the present invention, after the start-up circuit is turned on, the voltage at the gate terminal of MN3 is VD1+VTHN3The gate voltage required for MN4 to turn on is VD1+VD2+VD3+VTHN4≈3VD1+VTHN3＞VD1+VTHN3。
In an embodiment of the present invention, R2 and C2 in the operational amplifier provide miller compensation for the operational amplifier, and the capacitor C1 is disposed on the sources of MP6 and MP7 to provide filtering.
In an embodiment of the present invention, the voltage of the turn-on of D5 and D6 in the operational amplifier is less than the threshold voltage of MN5 and MN6, so that the operational amplifier will not conduct under normal conditions, and if single-event transient disturbance spike current occurs at the gates of MN5 and MN6, the current can be timely discharged through D5 and D6.
In an embodiment of the present invention, the voltage for turning on D7 and D8 in the operational amplifier is less than the threshold voltage of MN6 and MN7, so that the gate potential of MN7 can be stabilized.
In an embodiment of the present invention, the source of the output NMOS transistor MN8 is simultaneously connected to one end of the resistors R4 and R5, and the gate potentials of MP6 and MP7 are respectively connected to the other end of the resistors R4 and R5, so as to ensure that the currents flowing through the two resistors are equal.
In an embodiment of the invention, voltages at two ends of R4 and R5 in the bandgap reference voltage generation circuit are exactly equal, so that emitter currents of BP1 and BP3 are also ensured to be equal, and offset of an output reference is reduced; the D9 and BP2 cannot be conducted during normal work, and the transient current of a reference generation part can be effectively discharged under the irradiation condition, so that the stability of an output reference is ensured; r6 and C3 form a low-pass filter, and spike voltage induced by single particle incidence is filtered out and output.
Compared with the prior art, the technical scheme of the invention has the following advantages: according to the reinforced band-gap reference circuit for resisting the single event effect radiation, good radiation resistance is realized through smaller area and power consumption overhead, the lowest working voltage of the circuit is reduced, the application range of the circuit is improved, the anti-SET performance is improved by using the technology of adding diodes and capacitors to important nodes, the area and power consumption of the circuit are greatly reduced, and the cost of the circuit is reduced; the precision of the output voltage is improved by utilizing the operational amplifier, the required voltage net-to-space ratio is obviously reduced compared with the prior art, and the application range of the circuit is expanded.
Drawings
In order that the present invention may be more readily and clearly understood, reference will now be made in detail to the present invention, examples of which are illustrated in the accompanying drawings.
Fig. 1 is a schematic diagram of a radiation-hard bandgap reference circuit of the present invention.
Detailed Description
As shown in FIG. 1, the present embodiment provides a single event effect radiation hardening bandgap reference circuit, which includes PMOS transistors MP 1-MP 7; NMOS transistors MN1 to MN 8; diodes D1-D9; PNP triode BP 1-BP 3; resistors R1-R6; capacitors C1-C3.
R1, MN1, MN2, MP1, MP2, MN3, MN4 and D1-D4 are starting circuits and provide bias current for the whole band gap reference circuit. After the circuit is started, the voltage of the gate terminal of MN3 is V D1+VTHN3The gate voltage required for MN4 to turn on is VD1+VD2+VD3+VTHN4≈3VD1+VTHN3＞VD1+VTHN3Therefore, the normal operation of the reference circuit is not affected when the MN4 is switched off after the startup is completed. Meanwhile, the D1 can effectively discharge transient current induced by single-particle incidence at the drain end of the MN3, and the anti-SET capability is improved.
MP3, MP6, MP7, MN5, MN6, D5-D8, C1-C2, R2, MN7, MP4, MP5 and MN8 form an operational amplifier. The MP 3-MP 4 provide bias for the operational amplifier through the current of the current mirror image MP1, and the MP5 also provides bias for the subsequent reference voltage generation part through the current mirror image; the grid potentials of the operational amplifier input pair transistors MP6 and MP7 are respectively connected with the emitters of R3 and BP3, and the potentials at the two positions are equal by utilizing the high gain of the operational amplifier; r2 and C2 provide Miller compensation for the operational amplifier, so that the stability is ensured; the capacitor C1 is used for filtering the sources of the MP6 and the MP7, so that the operational amplifier common mode point is prevented from being disturbed by transient voltage induced by single particle incidence, and the common mode rejection ratio of the operational amplifier in an irradiation environment is improved; the voltage for turning on the D5 and the D6 is smaller than the threshold voltage of the MN5 and the MN6, so the conduction cannot be realized under the normal condition, and if single-particle transient disturbance peak current appears on the grids of the MN5 and the MN6, the single-particle transient disturbance peak current can be timely released through the D5 and the D6; d7 and D8 play the same role and are used for stabilizing the gate potential of MN 7; the source of the output device MN8 is simultaneously connected with one ends of the R4 and the R5, and the grid potentials of the MP6 and the MP7 are respectively connected with the other ends of the resistors, so that the currents flowing through the two resistors are ensured to be equal.
R4, R5, R3, BP1 to BP3, D9, R6, and C3 constitute a bandgap reference voltage generating circuit. Similar to the prior art, a voltage signal with a positive temperature coefficient is generated through the voltage difference between the base electrode and the emitter electrode of BP1 and BP3, a voltage with a negative temperature coefficient is generated through a forward PN junction of the base electrode and the emitter electrode of BP3, and the voltage are added to obtain a reference voltage irrelevant to temperature; because the voltages at the two ends of R4 and R5 are exactly equal, emitter currents of BP1 and BP3 are also equal, and offset of an output reference is reduced; the D9 and BP2 cannot be conducted during normal work, and the transient current of a reference generation part can be effectively discharged under the irradiation condition, so that the stability of an output reference is ensured; r6 and C3 form a low-pass filter, and spike voltage induced by single particle incidence is filtered out and output.
According to the invention, diodes and capacitors are added at important nodes of the circuit to inhibit transient peak voltage and current induced by single event effect, and the anti-irradiation performance of the circuit is improved. Compared with the prior art, the method does not need large current loss, and the whole reference static power consumption is less than 100 muA under the condition of 5V power supply and is far smaller than the prior art; the area of the triode is smaller, the overall layout is more compact, and the design and the transplantation are easy; meanwhile, the operational amplifier is used for replacing a Cascade structure in the prior art to improve the precision of output voltage, the lowest working voltage of the circuit is effectively reduced, and the application range is wider.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Various other modifications and alterations will occur to those skilled in the art upon reading the foregoing description. This need not be, nor should it be exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.
Claims (7)
1. A reinforced band-gap reference circuit for resisting single event effect radiation is characterized by comprising PMOS transistors MP 1-MP 7; NMOS transistors MN1 to MN 8; diodes D1-D9; PNP triode BP 1-BP 3; resistors R1-R6; capacitors C1-C3; wherein R1, MN1, MN2, MP1, MP2, MN3, MN4 and D1-D4 are starting circuits and provide bias current for the band-gap reference circuit; MP3, MP6, MP7, MN5, MN6, D5-D8, C1-C2, R2, MN7, MP4, MP5 and MN8 form an operational amplifier, the MP3 and MP4 provide bias for the operational amplifier through the current of a current mirror MP1, MP5 also provides bias for a subsequent reference voltage generation part through the current mirror, and the gate potentials of an input terminal of the operational amplifier to MP6 and MP7 are respectively connected with emitters of R3 and BP 3; the R4, R5, R3, BP 1-BP 3, D9, R6 and C3 form a band gap reference voltage generating circuit, wherein the voltage difference between the base electrode and the emitter electrode of the BP1 and the BP3 generates a voltage signal with a positive temperature coefficient, the forward PN junction of the base electrode and the emitter electrode of the BP3 generates a voltage with a negative temperature coefficient, and the voltage are added to obtain a reference voltage independent of the temperature.
2. The single event effect radiation hardening band gap reference circuit of claim 1, characterized in that: after the starting circuit is started, the voltage of the gate end of MN3 is VD1+VTHN3The gate voltage required for MN4 to turn on is VD1+VD2+VD3+VTHN4≈3VD1+VTHN3＞VD1+VTHN3。
3. The single event effect radiation hardening band gap reference circuit of claim 1, characterized in that: in the operational amplifier, R2 and C2 provide Miller compensation for the operational amplifier, and a capacitor C1 is arranged on the sources of the MP6 and MP7 to directly provide filtering.
4. The single event effect radiation hardening band gap reference circuit of claim 1, characterized in that: the voltage for turning on the D5 and the D6 in the operational amplifier is smaller than the threshold voltage of the MN5 and the MN6, so the operational amplifier cannot be turned on under the normal condition, and if single-particle transient disturbance peak current occurs on the grids of the MN5 and the MN6, the single-particle transient disturbance peak current can be timely discharged through the D5 and the D6.
5. The single event effect radiation resistant hardened band-gap reference circuit according to claim 1, characterized in that: the voltage of the D7 and the D8 in the operational amplifier is smaller than the threshold voltage of the MN6 and the MN7, so that the grid potential of the MN7 can be stabilized.
6. The single event effect radiation resistant hardened band-gap reference circuit according to claim 1, characterized in that: the source of the output NMOS transistor MN8 is simultaneously connected with one ends of the resistors R4 and R5, and the grid potentials of the MP6 and the MP7 are respectively connected with the other ends of the resistors R4 and R5, so that the currents flowing through the two resistors are ensured to be equal.
7. The single event effect radiation resistant hardened band-gap reference circuit according to claim 1, characterized in that: the voltages at two ends of R4 and R5 in the band-gap reference voltage generating circuit are exactly equal, so that emitter currents of BP1 and BP3 are also equal, and offset of an output reference is reduced; d9 and BP2 can not be conducted during normal work, and can effectively discharge part of transient current generated by the reference under the irradiation condition, so that the stability of the output reference is ensured; r6 and C3 form a low-pass filter, and spike voltage induced by single particle incidence is filtered out and output.
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| CN202210394652.2A CN114756079B (en) | 2022-04-15 | 2022-04-15 | Single event effect radiation resistant reinforced band gap reference circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117784874A (en) * | 2023-12-28 | 2024-03-29 | 电子科技大学 | Radiation-resistant subthreshold band gap reference current source circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117784874A (en) * | 2023-12-28 | 2024-03-29 | 电子科技大学 | Radiation-resistant subthreshold band gap reference current source circuit |
| CN117784874B (en) * | 2023-12-28 | 2024-10-01 | 电子科技大学 | Radiation-resistant subthreshold band gap reference current source circuit |
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