CN113110682B - PTAT current source with quick turn-on function - Google Patents
PTAT current source with quick turn-on function Download PDFInfo
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- CN113110682B CN113110682B CN202110275801.9A CN202110275801A CN113110682B CN 113110682 B CN113110682 B CN 113110682B CN 202110275801 A CN202110275801 A CN 202110275801A CN 113110682 B CN113110682 B CN 113110682B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
Abstract
The invention discloses a PTAT current source with a quick starting function, which comprises a folding operational amplifier, an operational amplifier with a mismatch mechanism, a quick starting module and a PTAT current mirror module. The quick start of the PTAT current source is ensured through the quick start and quick stabilization processes, and the state of the PTAT current source can be quickly stabilized. The PTAT current source with the rapid starting function disclosed by the invention reduces the power consumption of the traditional PTAT current source in the starting process, greatly improves the starting and stabilizing speed and also ensures that the circuit has a high power supply rejection ratio.
Description
Technical Field
The invention belongs to the technical field of PTAT current sources, and particularly relates to a PTAT current source with a quick turn-on function.
Background
A ptat (proportional to absolute temperature) type current source with a bandgap reference structure is a commonly used current source in an integrated circuit, and can provide required current for other circuit modules of the integrated circuit. Because the power-on starting speed of the PTAT current source greatly determines the starting speed of a chip of an integrated circuit system, in order to ensure the rapidness and the high efficiency of the starting process of an integrated circuit product in work, the PTAT current source must have the functions of rapid starting and rapid stabilization after starting at the same time, so as to solve the problem that the response speed and the convergence of the traditional PTAT current source are too slow in the starting process.
Therefore, there is a need for a PTAT current source with a fast turn-on function to increase the start-up speed of the system chip, and reduce the dynamic power consumption of the PTAT current source circuit during the start-up process, and ensure a high power supply rejection ratio of the PTAT current source circuit in the steady state.
Disclosure of Invention
The invention aims to provide a PTAT current source with a quick starting function, which realizes quick response, reduces the power consumption of a PTAT current source circuit in the starting process and ensures the high power supply rejection ratio of the PTAT current source in a steady state.
The technical scheme includes that the PTAT current source with the rapid starting function comprises a folding operational amplifier A1, an operational amplifier A2 with a mismatch mechanism, a rapid starting module and a PTAT current mirror module, the folding operational amplifier is adopted to ensure the output stability of the PTAT current source, and the rapid starting module formed by the operational amplifier with the mismatch mechanism is utilized to realize the rapid starting and rapid stabilizing functions.
The present invention is also characterized in that,
the current source circuit comprises PNP bipolar transistors Q1 and Q2, bases and collectors of the transistors Q1 and Q2 are connected together, and collectors of the transistors Q1 and Q2 are connected to GND; the emitter of the transistor Q1 is also connected with a resistor R1; the other end of the resistor R1 is respectively connected with the resistor R3 and the operational amplifier A1, and the other end of the resistor R3 is connected with the drain electrode of the MOS transistor MP 3; the emitter of the transistor Q2 is also connected with a resistor R2, the other end of the resistor R2 is connected with the drain of the MOS transistor MP4, and the emitter of the transistor Q1 is also connected with an operational amplifier A2;
the non-inverting input end of the operational amplifier A1 is connected with the connection point of the resistor R3 and the resistor R1, the inverting input end of the operational amplifier A1 is connected with the emitter of the transistor Q2, and the output end of the operational amplifier A1 is connected with the drain of the MOS transistor MN 6; the in-phase end of the operational amplifier A2 is connected with the emitter of the transistor Q1, the inverting end of the operational amplifier A2 is connected with the grid connection point of the resistor R3 and the MOS tube MP3, and the output end of the operational amplifier A2 is connected with the drain of the MOS tube MN 6;
the gates of the P-type MOS tubes MP1 and MP3 are respectively connected with the drains and the gates of the MP11 and MP9, the drains of the MOS tubes MP11 and MP9 are respectively connected with the drains of the MOS tubes MP12 and MP10, and the gates of the MOS tubes MP12 and MP10 are respectively connected with the output end of the operational amplifier A1 and the drain of the MOS tube MP 5; the sources of the MOS tubes MP11 and MP9 are connected to VDD, and the sources of the MOS tubes MP12 and MP10 are connected to GND.
The PTAT current mirror module comprises P-type MOS tubes MP1, MP2, MP3 and MP 4; the sources of the MOS tubes MP1 and MP2 are connected with VDD, and the gates are connected together; the source electrodes of the MOS tubes MP3 and MP4 are connected with the drain electrodes of the MOS tubes MP1 and MP2, and the grid electrodes are connected together; the gate bias voltages V1 and V2 of the MOS transistors MP1, MP2 and MP3, MP4 can provide bias voltages for the gates of the cascode current mirrors of the other modules.
The quick start module comprises a P-type MOS tube, an MP5, an MP13, an MP14, an MP16, an MP17, an N-type MOS tube MN6, an MN7, an MN8, an MN15, an MN18 and a Turbo current mirror module;
the P-type MOS tube MP5 is a switch MOS tube, the grid electrode of the switch MOS tube is connected with a digital signal to control the starting of the module, and the drain electrode of the MOS tube MP5 is connected with the drain electrode of the MOS tube MN 6; the grid electrode of the MOS tube MN6 is simultaneously connected with the output end of the operational amplifier A2 and the drain electrode of the MN 7; the grid electrode of MN8 of the N-type MOS tube adopting the capacitance connection method is connected with the grid electrode of MN7 and is finally connected with the grid electrode of MN15 of the N-type MOS tube; the gates of the P-type MOS tubes MP13 and MP14 are connected with the PTAT current mirror module, the drain of the MOS tube MP13 is connected with the source of the MOS tube MP14, the drain of the MOS tube MP14 is connected with the drain of the MOS tube MN15, and meanwhile, the drain and the source of the MOS tube MN15 are connected together; the gates of the P-type MOS tubes MP16 and MP17 are connected with the PTAT current mirror module, the drain of the MOS tube MP16 is connected with the source of the MOS tube MP17, the drain of the MOS tube MP17 is connected with the drain of the MOS tube MN18, and the drain and the source of the MOS tube MN18 are connected with the gates of the MOS tubes MN23 and MN24 of the operational amplifier A1 in parallel to control the working state of the operational amplifier A1; sources of the MOS tubes MP16, MP13 and MP5 are connected to VDD, and sources of the MOS tubes MN18, MN15, MN6, MN8 and MN7 are connected to GND.
The Turbo current mirror module comprises P-type MOS tubes MP37, MP38, MP39 and MP 40; the source electrodes of the MOS tubes MP37 and MP39 are connected with VDD, and the drain electrodes are respectively connected with the source electrodes of the MOS tubes MP38 and MP 40; the Turbo current mirror module can output a current to enable the bias voltage of the PTAT current source to be rapidly stabilized when the bias voltage of the PTAT current source reaches a preset value.
The operational amplifier A1 comprises P-type MOS transistors MP19, MP20, MP21, MP22, MP41, MP42, MP27, MP28, and N-type MOS transistors MN23, MN24, MN25 and MN 26. The gates of the MOS tubes MP27 and MP28 are respectively an inverting input end and a non-inverting input end of A1, the sources of the MP27 and MP28 are connected and connected to the drain of the MOS tube MP42, the source of the MOS tube MP42 is connected to the drain of the MP41, and the source of the MOS tube MP41 is connected to VDD; the gates of the MOS tubes MP41 and MP42 are respectively connected with V1 and V2; the drain electrode of the MOS tube MP27 is connected with the source electrode of the MOS tube MN 24; the drain electrode of the MOS tube MP28 is connected with the source electrode of the MOS tube MN 25; the gates of the MOS tubes MN23 and MN24 are connected with V4; the drains of the MOS tubes MN23 and MN24 are respectively connected with the drains of the MOS tubes MP21 and MP 22; the gates of the MOS tubes MP21 and MP22 are connected with V2; the source electrodes of the MOS tubes MP21 and MP22 are respectively connected with the drain electrodes of the MOS tubes MP19 and MP 20; the sources of the MOS tubes MP19 and MP20 are connected with VDD; the gates of the MOS tubes MP19 and MP20 are connected and connected with the drain of the MOS tube MP 21; the source electrodes of the MOS tubes MN23 and MN24 are respectively connected with the drain electrodes of the MOS tubes MN25 and MN 26; the sources of the MOS tubes MN25 and MN26 are connected with GND; the gates of the MOS tubes MN25 and MN26 are connected with V3; after the PTAT current source is started and stabilized quickly, the potential at the upper end of the resistor R1 and the potential error at the lower end of the resistor R2 return to the gates of the MOS transistors MP27 and MP28, the bias voltage of the PTAT current source is stabilized through a negative feedback mechanism, and the stability of the bias voltage of the PTAT current source in a working state is ensured.
The operational amplifier A2 comprises P-type MOS tubes MP29, MP30, MP31, MP32 and MP33, and N-type MOS tubes MN34, MN35 and MN 36; the gates of the MOS tubes MP32 and MP33 are respectively used as an inverting input end and a non-inverting input end of A2; the source electrodes of the MOS tubes MP32 and MP33 are connected with the drain electrode of the MOS tube MP31, the source electrode of the MOS tube MP31 is connected with the drain electrode of the MOS tube MP30, and the source electrode of the MOS tube MP30 is connected with the drain electrode of the MOS tube MP 29; the gates of the MOS tubes MP30 and MP31 are connected with the inverted signal of Dig; the source electrode of the MOS tube MP29 is connected with VDD, and the grid electrode of the MOS tube MP29 is connected with the drain electrode of the MOS tube MP 29; the drains of the MOS tubes MP32 and MP33 are respectively connected with the drains of the MOS tubes MN35 and MN 36; the sources of the MOS tubes MN35 and MN36 are connected with GND, and the gates of the MOS tubes MN35 and MN36 are connected with the drain of the MOS tube MN36 in parallel; the drain electrode of the MOS tube MN34 is connected with the drain electrode of the MOS tube MN35, the source electrode of the MOS tube MN34 is connected with GND, and the grid electrode of the MOS tube MN34 is connected with the inverse signal of the Dig; the W/L of the MOS tube MP32 in the operational amplifier A2 is set to be twice of that of the MP33, so that the current flowing through the MP32 is larger than that of the MP33, a mismatch mechanism of the operational amplifier A2 is formed, and the starting process and the stabilizing process of the PTAT current mirror module are accelerated.
The PTAT current mirror module comprises a current mirror, the current mirror adopts a PMOS type cascode structure, and the power supply rejection ratio and the adaptability to different loads are improved.
The PTAT current source has the beneficial effect of having a quick turn-on function. Compared with the prior art, the method has the following advantages:
(1) the current mirror unit adopts a PMOS type cascode structure, so that the influence of a load on a current source is further reduced, and the power supply rejection ratio of the current source is improved.
(2) The operational amplifier with the mismatch mechanism adjusts parameters of a starting process by setting different W/L ratios of the MOS tubes, so that the circuit is high in adjustability.
(3) The starting process and the stabilizing process of the PTAT current source are switched in a self-adaptive mode through the analog circuit, the starting speed is improved, and meanwhile the robustness of the PTAT current source is guaranteed.
(4) The PTAT current source accelerating circuit does not need to adopt a special process, and can achieve an ideal effect under the traditional CMOS process.
Drawings
FIG. 1 is a circuit diagram of a PTAT current source with a fast start function according to the present invention;
fig. 2 is a circuit configuration diagram of the folding operational amplifier a1 of the present invention;
fig. 3 is a circuit configuration diagram of an operational amplifier a2 having a mismatch mechanism according to the present invention;
FIG. 4 is a schematic circuit diagram of a Turbo current mirror module according to the present invention;
FIG. 5 is a schematic diagram of the response process of the quick start of the present invention;
FIG. 6 is a schematic diagram illustrating the rapid settling of the bias voltage according to the present invention;
FIG. 7 is a graph of the circuit bias voltage and key node voltage simulation results of the present invention;
fig. 8 is a graph of simulation results of gate voltage of the switching MOS transistor MN6 and current of the Turbo current mirror module according to the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The PTAT current source circuit structure with the rapid starting function is shown in FIG. 1, the circuit adopts a folding operational amplifier A1 to ensure that the PTAT current source can output stably, and a rapid starting module composed of an operational amplifier A2 with a mismatch mechanism realizes the functions of rapid starting and rapid stabilization; the current source comprises a folding operational amplifier, an operational amplifier with a mismatch mechanism, a quick start module and a PTAT current mirror module.
The base electrodes and the collector electrodes of PNP bipolar transistors Q1 and Q2 are connected together, and the collector electrodes of the transistors Q1 and Q2 are connected to GND; the emitter of the transistor Q1 is connected with R1; one end of the resistor R3 is connected with R1, and the other end of the resistor R3 is connected with the drain electrode of the MOS transistor MP 3; one end of the resistor R2 is connected with the emitter of the Q2, and the other end of the resistor R2 is connected with the drain of the MOS transistor MP 4; the non-inverting input end of an operational amplifier A1 is connected with the connection point of the resistor R3 and the resistor R1, the inverting input end of an operational amplifier A1 is connected with the emitter of the transistor Q2, and the output end of an operational amplifier A1 is connected with the drain of the MOS transistor MN 6; the in-phase end of the operational amplifier A2 is connected with the emitter of the transistor Q1, the inverting end of the operational amplifier A2 is connected with the grid connection point of the resistor R3 and the MOS tube MP3, and the output end of the operational amplifier A2 is connected with the drain of the MOS tube MN 6; the drains and gates of the P-type MOS transistors MP11 and MP9 are connected to the gates of the MOS transistors MP1 and MP3, respectively, while the drains of the MOS transistors MP11 and MP9 are connected to the drains of the MOS transistors MP12 and MP10, respectively, and the gates of the MOS transistors MP12 and MP10 are connected to the output end of the operational amplifier a1 and the drain of the MOS transistor MP 5; the sources of the MOS tubes MP11 and MP9 are connected to VDD, and the sources of the MOS tubes MP12 and MP10 are connected to GND.
The PTAT current mirror module comprises P-type MOS tubes MP1, MP2, MP3 and MP 4; the sources of the MOS tubes MP1 and MP2 are connected with VDD, and the gates are connected together; the sources of the MOS tubes MP3 and MP4 are connected with the drains of the MOS tubes MP1 and MP2, and the gates are connected together. The gate bias voltages V1 of the MOS tubes MP1 and MP2 and the gate voltages V2 of the MOS tubes MP3 and MP4 provide bias voltages for the gates of the cascode current mirrors of other modules.
The quick start module comprises a P-type MOS tube, an MP5, an MP13, an MP14, an MP16, an MP17, an N-type MOS tube MN6, an MN7, an MN8, an MN15, an MN18 and a Turbo current mirror module; the P-type MOS tube MP5 is a switching MOS tube, the grid electrode of the switching MOS tube is connected with a digital signal to control the start of a module, and the drain electrode of the MOS tube MP5 is connected with the drain electrode of the MOS tube MN 6; the grid electrode of the MOS tube MN6 is simultaneously connected with the output end of the operational amplifier A2 and the drain electrode of the MN 7; the grid electrode of MN8 of the N-type MOS tube adopting the capacitance connection method is connected with the grid electrode of MN7, and finally is connected with the grid electrode of MN15 of the N-type MOS tube; the gates of the P-type MOS tubes MP13 and MP14 are connected with a PTAT current mirror module, the drain of the MOS tube MP13 is connected with the source of the MOS tube MP14, the drain of the MOS tube MP14 is connected with the drain of the MOS tube MN15, and the drain and the source of the MOS tube MN15 are connected together; the gates of the P-type MOS tubes MP16 and MP17 are connected with a PTAT current mirror module, the drain of the MOS tube MP16 is connected with the source of the MOS tube MP17, the drain of the MOS tube MP17 is connected with the drain of the MOS tube MN18, and the drain and the source of the MOS tube MN18 are connected and connected with the gates of the MOS tubes MN23 and MN24 of the operational amplifier A1 to control the working state of the operational amplifier A1; the sources of the MOS tubes MP16, MP13 and MP5 are connected to VDD, and the sources of the MOS tubes MN18, MN15, MN6, MN8 and MN7 are connected to GND.
The Turbo current mirror module is shown in fig. 4, and includes P-type MOS transistors MP37, MP38, MP39, and MP 40; the source electrodes of the MOS tubes MP37 and MP39 are connected with VDD, and the drain electrodes of the MOS tubes MP38 and MP40 are respectively connected with the source electrodes; the Turbo current mirror module may output a current Iturbo to rapidly stabilize the bias voltage of the PTAT current source when the bias voltage of the PTAT current source reaches a preset value (as shown in section B in fig. 8).
The folded operational amplifier a1 is shown in fig. 2 and includes P-type MOS transistors MP19, MP20, MP21, MP22, MP41, MP42, MP27, MP28, N-type MOS transistors MN23, MN24, MN25, and MN 26. The gates of the MOS transistors MP27 and MP28 are respectively an inverting input terminal and a non-inverting input terminal of a1, the sources of the MOS transistors MP27 and MP28 are connected to the drain of the MOS transistor MP42, the source of the MOS transistor MP42 is connected to the drain of the MOS transistor MP41, and the source of the MOS transistor MP41 is connected to VDD; the gates of the MOS tubes MP41 and MP42 are respectively connected with V1 and V2; the drain electrode of the MOS transistor MP27 is connected with the source electrode of the MOS transistor MN 24; the drain electrode of the MOS transistor MP28 is connected with the source electrode of the MOS transistor MN 25; the gates of the MOS tubes MN23 and MN24 are connected with V4; the drains of the MOS tubes MN23 and MN24 are respectively connected with the drains of the MOS tubes MP21 and MP 22; the gates of the MOS tubes MP21 and MP22 are connected with V2; the source electrodes of the MOS tubes MP21 and MP22 are respectively connected with the drain electrodes of the MOS tubes MP19 and MP 20; the sources of the MOS tubes MP19 and MP20 are connected with VDD; the gates of the MOS tubes MP19 and MP20 are connected and connected with the drain of the MOS tube MP 21; the sources of the MOS tubes MN23 and MN24 are respectively connected with the drains of the MOS tubes MN25 and MN 26; the sources of the MOS tubes MN25 and MN26 are connected with GND; the gates of the MOS transistors MN25 and MN26 are connected with V3. After the PTAT current source is started and stabilized quickly, the potential at the upper end of the resistor R1 and the potential error at the lower end of the resistor R2 return to the gates of the MOS transistors MP27 and MP28, the bias voltage of the PTAT current source is stabilized through a negative feedback mechanism, and the stability of the bias voltage of the PTAT current source in a working state is ensured.
The operational amplifier a2 with mismatch mechanism is shown in fig. 3 and includes P-type MOS transistors MP29, MP30, MP31, MP32, MP33, and N-type MOS transistors MN34, MN35, MN 36. The gates of the MOS tubes MP32 and MP33 are respectively an inverting input end and a non-inverting input end of A2; the source electrodes of the MOS tubes MP32 and MP33 are connected with each other and are connected with the drain electrode of the MOS tube MP31, the source electrode of the MOS tube MP31 is connected with the drain electrode of the MOS tube MP30, and the source electrode of the MOS tube MP30 is connected with the drain electrode of the MOS tube MP 29; the gates of the MOS tubes MP30 and MP31 are connected with the inverse signal of the Dig; the source electrode of the MOS tube MP29 is connected with VDD, and the grid electrode of the MOS tube MP29 is connected with the drain electrode of the MOS tube MP 29; the drains of the MOS tubes MP32 and MP33 are respectively connected with the drains of the MOS tubes MN35 and MN 36; the sources of the MOS tubes MN35 and MN36 are connected with GND, and the gates of the MOS tubes MN35 and MN36 are connected with the drain of the MOS tube MN36 in parallel; the drain electrode of the MOS transistor MN34 is connected with the drain electrode of the MOS transistor MN35, the source electrode of the MOS transistor MN34 is connected with GND, and the gate electrode of the MOS transistor MN34 is connected with the inverse signal of Dig. The W/L of the MOS tube MP32 in the operational amplifier A2 is set to be twice of that of the MP33, so that the current flowing through the MP32 is larger than that of the MP33, a mismatch mechanism of the operational amplifier A2 is formed, and the starting process and the stabilizing process of the PTAT current mirror module are accelerated.
The operational amplifier A2 with a mismatch mechanism is connected to the gate of the MOS transistor MN6 through the output end of the operational amplifier A2 by detecting the mismatch degree between the voltage difference between the upper end of the PNP bipolar transistor Q1 and the drain of the MOS transistor MP3 and the operational amplifier A2, and is connected to the gates of the MP10 and the MP12 through the drain of the MN6, and finally forms a feedback path through the gates of the MP9 and the MP11 and the PTAT current mirror module, so that the bias voltages V1 and V2 of the PTAT current mirror module quickly reach preset values during starting by using a positive feedback mechanism, thereby achieving the purpose of quick starting, and meanwhile, in the process, the gate voltage of the MOS transistor MN6 is increased due to the accumulation of the current difference between the MOS transistor MP35 and the MN36 in the operational amplifier A2 at the gate of the MOS transistor MN6 of the quick starting module; after the bias voltages V1 and V2 of the PTAT current mirror module reach preset values, the circuit enters a rapid stable mode, because the Turbo current mirror module copies the current of the PTAT current mirror module, when the bias voltages V1 and V2 of the PTAT current mirror module reach the preset values, a large current is injected into a branch of a non-inverting input end of the operational amplifier A2, according to a KCL current law, a current difference between drains of MP32 and MP33 in the operational amplifier A2 absorbs a large amount of charges, so that the gate voltage of the MOS tube MN6 is rapidly reduced, the bias voltage of the PTAT current mirror module is rapidly stabilized at the preset value so as not to influence a required steady state, in the process of stabilizing the bias voltage of the PTAT current mirror module, because the bias voltage of the PTAT current mirror module reaches the preset values, the gate voltage of the MOS tube MN15 in the rapid starting module is increased, and the gate voltage of the MOS tube MN7 is also increased, another short-circuit path is formed on the MOS transistor MN7 to accelerate the rapid drop of the gate voltage of the MOS transistor MN6 and also ensure that the bias voltage of the PTAT current mirror module is rapidly stabilized at a preset value; after the MOS transistor MN6 falls to a preset value and is closed, the rapid stabilization mode is ended, the gate voltage V4 of the MOS transistor MN18 also rises to the preset value, and the MOS transistors MN23 and MN24 in the operational amplifier a1 are turned on, the operational amplifier a1 starts to operate, the PTAT current source is enabled to stably output PTAT current (voltage) through a negative feedback mechanism, and the PTAT current source starts to normally operate.
As shown in fig. 5, when the digital signal DIG changes from low to high, the circuit enters a fast start mode (as shown in section a in fig. 7), the operational amplifier a2 with a mismatch mechanism accesses the gate of the MOS transistor MN6 through detecting the mismatch degree between the voltage difference between the upper end of the PNP bipolar transistor Q1 and the drain of the MOS transistor MP3 and the operational amplifier a2 itself, accesses the gates of the MOS transistors MP10 and MP12 through the output end of the operational amplifier a2, and accesses the gates of the MP10 and MP12 through the drain of the PNP 6, and finally forms a feedback path with the PTAT current mirror module through the gates of the MP9 and MP11, so that the bias voltages V1 and V2 of the PTAT current mirror module quickly reach preset values during start-up, and the purpose of fast start is achieved. The W/L of the MOS transistor MP32 in the operational amplifier a2 is set to be twice as large as that of MP33, so that the current flowing through MP32 is larger than that of MP33, and according to the KCL current law, the gate voltage of the MOS transistor MN6 rises (as shown in section a in fig. 8) because the current difference between the MOS transistors MP32 and MN35 in the operational amplifier a2 accumulates in the MOS transistor MN6 of the fast start module in the fast start mode. During the fast start mode, V3 and V4 also rise due to the influence of the bias voltages V1 and V2.
As shown in fig. 6, since the Turbo current mirror module copies the current of the PTAT current mirror module, and enters a fast stabilization mode when the bias voltage of the PTAT current mirror module reaches a preset value (as shown in section B in fig. 7), the Turbo current mirror module injects a large current into the non-inverting input branch of the operational amplifier a2, and according to the KCL current law, the current difference between the drains of MN35 and MP32 in the operational amplifier a2 absorbs a large amount of charges, so that the gate voltage of the MOS transistor MN6 is rapidly decreased (as shown in section B in fig. 8), and the bias voltages V1 and V2 of the PTAT current mirror module are rapidly stabilized at preset values, so as to avoid affecting a required steady state. In the process of stabilizing the bias voltage of the PTAT current mirror module, when the bias voltages V1 and V2 of the PTAT current mirror module reach preset values, the gate voltages V3 of the MOS tubes MN7 and MN8 in the quick start module also reach the preset values, so that the MOS tube MN7 is turned on, another short-circuit path is formed on the MOS tube MN7 to accelerate the gate voltage drop of the MOS tube MN6, and the bias voltages V1 and V2 of the PTAT current mirror module can be ensured to be quickly stabilized at the preset values. When the grid voltage of the MOS transistor MN6 drops to a preset value, the MOS transistor MN6 is turned off, the output end of the A2 is disconnected with the feedback path, and the rapid stabilization mode is ended.
When the rapid stabilization mode is finished, the gate voltage V4 of the MOS transistor MN18 is also stabilized at a preset value, and the MOS transistors MN23 and MN24 controlled by V4 in the operational amplifier a1 are turned on, the operational amplifier a1 starts to operate, the circuit enters a normal operation mode (as shown in a section C in fig. 7), the operational amplifier a1 detects the voltage difference between the upper end of the resistor R1 and the lower end of the resistor R2, returns to the gates of the MP10 and MP12, and finally forms a feedback path with the PTAT current mirror module through the gates of the MP9 and MP11, and the bias voltages V1 and V2 of the PTAT current mirror are ensured to be stabilized by using a negative feedback mechanism, so that the main branch current of the PTAT current mirror is stabilized
(wherein
) Thereby to makeThe PTAT current source is made to stably output a PTAT current (voltage).
Claims (7)
1. A PTAT current source with fast turn-on function, wherein the current source circuit comprises a folding operational amplifier A1, a fast turn-on module composed of an operational amplifier A2 with mismatch mechanism and a PTAT current mirror module; the output stability of the PTAT current source is ensured by adopting a folding operational amplifier; the fast start module formed by the operational amplifier A2 with mismatch mechanism is used to realize the fast start and fast and stable function;
the operational amplifier A2 comprises P-type MOS tubes MP29, MP30, MP31, MP32 and MP33, and N-type MOS tubes MN34, MN35 and MN 36; the gates of the MOS tubes MP32 and MP33 are respectively used as an inverting input end and a non-inverting input end of A2; the source electrodes of the MOS tubes MP32 and MP33 are connected with each other and are connected with the drain electrode of the MOS tube MP31, the source electrode of the MOS tube MP31 is connected with the drain electrode of the MOS tube MP30, and the source electrode of the MOS tube MP30 is connected with the drain electrode of the MOS tube MP 29; the gates of the MOS tubes MP30 and MP31 are connected with the inverse signal of the Dig; the source electrode of the MOS tube MP29 is connected with VDD, and the grid electrode of the MOS tube MP29 is connected with the drain electrode of the MOS tube MP 29; the drains of the MOS tubes MP32 and MP33 are respectively connected with the drains of the MOS tubes MN35 and MN 36; the sources of the MOS tubes MN35 and MN36 are connected with GND, and the gates of the MOS tubes MN35 and MN36 are connected with the drain of the MOS tube MN36 in parallel; the drain of the MOS transistor MN34 is connected with the drain of the MOS transistor MN35, the source of the MOS transistor MN34 is connected with GND, and the gate of the MOS transistor MN34 is connected with the inverse signal of Dig; the W/L of the MOS tube MP32 in the operational amplifier A2 is set to be twice of that of the MP33, so that the current flowing through the MP32 is larger than that of the MP33, a mismatch mechanism of the operational amplifier A2 is formed, and the starting process and the stabilizing process of the PTAT current mirror module are accelerated.
2. A PTAT current source with fast turn-on function according to claim 1, characterized in that the current source circuit comprises PNP bipolar transistors Q1 and Q2, the base and collector of the transistors Q1 and Q2 are connected together, the collectors of the transistors Q1 and Q2 are connected to GND; the emitter of the transistor Q1 is also connected with a resistor R1; the other end of the resistor R1 is respectively connected with a resistor R3 and an operational amplifier A1, and the other end of the resistor R3 is connected with the drain electrode of the MOS transistor MP 3; the emitter of the transistor Q2 is further connected with a resistor R2, the other end of the resistor R2 is connected with the drain of a MOS transistor MP4, and the emitter of the transistor Q1 is further connected with an operational amplifier A2;
the non-inverting input end of the operational amplifier A1 is connected with the connection point of a resistor R3 and a resistor R1, the inverting input end of the operational amplifier A1 is connected with the emitter of the transistor Q2, and the output end of the operational amplifier A1 is connected with the drain of a MOS transistor MN 6; the in-phase end of the operational amplifier A2 is connected with the emitter of the transistor Q1, the inverting end of the operational amplifier A2 is connected with the grid connection point of the resistor R3 and the MOS tube MP3, and the output end of the operational amplifier A2 is connected with the drain of the MOS tube MN 6;
the gates of the P-type MOS tubes MP1 and MP3 are respectively connected with the drains and the gates of the MP11 and MP9, the drains of the MOS tubes MP11 and MP9 are respectively connected with the drains of the MOS tubes MP12 and MP10, and the gates of the MOS tubes MP12 and MP10 are both connected with the output end of the operational amplifier A1 and the drain of the MOS tube MP 5; the sources of the MOS tubes MP11 and MP9 are connected to VDD, and the sources of the MOS tubes MP12 and MP10 are connected to GND.
3. The PTAT current source with the fast turn-on function as claimed in claim 1 wherein the PTAT current mirror module comprises P type MOS transistors MP1, MP2, MP3, MP 4; the sources of the MOS tubes MP1 and MP2 are connected with VDD, and the gates are connected together; the source electrodes of the MOS tubes MP3 and MP4 are connected with the drain electrodes of the MOS tubes MP1 and MP2, and the grid electrodes are connected together; the gate bias voltages V1 and V2 of the MOS transistors MP1 and MP2 and the gate bias voltages V3 and MP4 can provide bias voltages for the gates of the cascode current mirrors of other modules.
4. The PTAT current source with the fast turn-on function as claimed in claim 1 wherein the fast start-up module comprises P type MOS transistor, MP5, MP13, MP14, MP16, MP17, N type MOS transistor MN6, MN7, MN8, MN15, MN18, and Turbo current mirror module;
the P-type MOS tube MP5 is a switch MOS tube, the grid electrode of the switch MOS tube MP5 is connected with a digital signal to control the starting of the module, and the drain electrode of the MOS tube MP5 is connected with the drain electrode of the MOS tube MN 6; the grid electrode of the MOS tube MN6 is simultaneously connected with the output end of the operational amplifier A2 and the drain electrode of the MN 7; the grid electrode of MN8 of the N-type MOS tube adopting the capacitance connection method is connected with the grid electrode of MN7, and finally is connected with the grid electrode of MN15 of the N-type MOS tube; the gates of the P-type MOS tubes MP13 and MP14 are connected with a PTAT current mirror module, the drain of the MOS tube MP13 is connected with the source of the MOS tube MP14, the drain of the MOS tube MP14 is connected with the drain of the MOS tube MN15, and meanwhile, the drain and the source of the MOS tube MN15 are connected together; the gates of the P-type MOS tubes MP16 and MP17 are connected with a PTAT current mirror module, the drain of the MOS tube MP16 is connected with the source of the MOS tube MP17, the drain of the MOS tube MP17 is connected with the drain of the MOS tube MN18, and the drain and the source of the MOS tube MN18 are connected and connected with the gates of the MOS tubes MN23 and MN24 of the operational amplifier A1 to control the working state of the operational amplifier A1; the sources of the MOS tubes MP16, MP13 and MP5 are connected to VDD, and the sources of the MOS tubes MN18, MN15, MN6, MN8 and MN7 are connected to GND.
5. The PTAT current source with the fast turn-on function as claimed in claim 4 wherein the Turbo current mirror module comprises P type MOS transistors MP37, MP38, MP39, MP 40; the source electrodes of the MOS tubes MP37 and MP39 are connected with VDD, and the drain electrodes of the MOS tubes MP38 and MP40 are respectively connected with the source electrodes; the Turbo current mirror module can output a current to enable the bias voltage of the PTAT current source to be rapidly stabilized when the bias voltage of the PTAT current source reaches a preset value.
6. The PTAT current source of claim 2 wherein the operational amplifier A1 includes P type MOS transistors MP19, MP20, MP21, MP22, MP41, MP42, MP27, MP28, and N type MOS transistors MN23, MN24, MN25, MN 26; the gates of the MOS transistors MP27 and MP28 are an inverting input terminal and a non-inverting input terminal of a1, respectively, the sources of the MOS transistors MP27 and MP28 are connected to the drain of the MOS transistor MP42, the source of the MOS transistor MP42 is connected to the drain of the MOS transistor MP41, and the source of the MOS transistor MP41 is connected to VDD; the gates of the MOS tubes MP41 and MP42 are respectively connected with V1 and V2; the drain electrode of the MOS transistor MP27 is connected with the source electrode of the MOS transistor MN 24; the drain electrode of the MOS transistor MP28 is connected with the source electrode of the MOS transistor MN 25; the gates of the MOS tubes MN23 and MN24 are connected with V4; the drains of the MOS tubes MN23 and MN24 are respectively connected with the drains of the MOS tubes MP21 and MP 22; the gates of the MOS tubes MP21 and MP22 are connected with V2; the source electrodes of the MOS tubes MP21 and MP22 are respectively connected with the drain electrodes of the MOS tubes MP19 and MP 20; the sources of the MOS tubes MP19 and MP20 are connected with VDD; the gates of the MOS tubes MP19 and MP20 are connected and connected with the drain of the MOS tube MP 21; the sources of the MOS tubes MN23 and MN24 are respectively connected with the drains of the MOS tubes MN25 and MN 26; the sources of the MOS tubes MN25 and MN26 are connected with GND; the gates of the MOS tubes MN25 and MN26 are connected with V3; after the PTAT current source is started and stabilized quickly, the potential at the upper end of the resistor R1 and the potential error at the lower end of the resistor R2 return to the gates of the MOS transistors MP27 and MP28, the bias voltage of the PTAT current source is stabilized through a negative feedback mechanism, and the stability of the bias voltage of the PTAT current source in a working state is ensured.
7. The PTAT current source with the rapid turn-on function as claimed in claim 1 wherein the PTAT current mirror module comprises a current mirror, the current mirror adopts PMOS type cascode structure, which improves power supply rejection ratio and adaptability to different loads.
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| EP2239645A1 (en) * | 2009-04-09 | 2010-10-13 | austriamicrosystems AG | Band gap reference circuit and method for operating a band gap reference circuit |
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