CN114744083A - UV LED epitaxial structure and growth method thereof - Google Patents

UV LED epitaxial structure and growth method thereof Download PDF

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CN114744083A
CN114744083A CN202210223355.1A CN202210223355A CN114744083A CN 114744083 A CN114744083 A CN 114744083A CN 202210223355 A CN202210223355 A CN 202210223355A CN 114744083 A CN114744083 A CN 114744083A
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李国强
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Guangzhou Zhongtuo Photoelectric Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Abstract

A UV LED epitaxial structure and a growth method thereof relate to the technical field of semiconductor materials; the method comprises the following steps: sequentially growing a buffer layer, an unintended doping layer, an n-type doping layer, a multi-quantum well light-emitting layer, an EBL layer and a p-type AlGaN layer on a substrate; the buffer layer comprises a first AlN layer, a second AlN layer, a third AlN layer and a fourth AlN layer which are sequentially superposed. The invention can improve the crystal quality of the LED epitaxial wafer, reduce non-radiative recombination caused by defects, improve the recombination probability of electrons and holes, improve the internal quantum efficiency and greatly improve the luminous efficiency.

Description

UV LED epitaxial structure and growth method thereof
Technical Field
The invention belongs to the technical field of semiconductor materials, and particularly relates to a UV LED epitaxial structure and a growth method thereof.
Background
With the continuous development of the LED technology, the light-emitting wavelength of the LED is expanded from a visible light band to an ultraviolet band, the wavelength of the ultraviolet band is 100-400 nm, and the ultraviolet is generally divided into A, B, C three bands according to the difference of the wavelength: UVA is 400-315 nm, UVB is 315-280 nm, and UVC is 280-100 nm. Wherein UVA is mainly used for ultraviolet curing and UV ink-jet printing, UVB is mainly used for medical treatment, and UVC is used for sterilization. As a novel ultraviolet light source, the UV LED has the advantages of low energy consumption, small volume, good integration, long service life, environmental protection, no toxicity and the like, and is one of the fields and industries with the most development potential of the current III-group nitride semiconductors. Although the application prospect of the UV LED is wide, compared with blue light, the luminous efficiency of the UV LED is low, and further application of the UV LED is restricted.
Disclosure of Invention
In order to overcome the defects of the prior art, one of the purposes of the invention is to provide a growth method of a UV LED epitaxial structure, which can improve the crystal quality of an LED epitaxial wafer, reduce non-radiative recombination caused by the defects, improve the recombination probability of electrons and holes, improve the internal quantum efficiency and greatly improve the luminous efficiency.
The invention also aims to provide a UV LED epitaxial structure.
One of the purposes of the invention is realized by adopting the following technical scheme:
a growth method of a UV LED epitaxial structure comprises the following steps: sequentially growing a buffer layer, an unintended doping layer, an n-type doping layer, a multi-quantum well light-emitting layer, an EBL layer and a p-type AlGaN layer on a substrate;
the buffer layer comprises a first AlN layer, a second AlN layer, a third AlN layer and a fourth AlN layer which are sequentially superposed, and the growth method comprises the following steps:
1) growing a first AlN layer on the substrate, wherein the growth temperature of the first AlN layer is 800-900 ℃, the pressure is 50-100torr, the TMAl flow is 100-200sccm, and NH is3The flow rate is 2-10 slm;
2) growing a second AlN layer on the first AlN layer, wherein the growth temperature of the second AlN layer is 1000-1100 ℃, the pressure is 50-100torr, the TMAl flow is 200-300sccm, and NH3The flow rate is 1-8 slm;
3) growing a third AlN layer on the second AlN layer, wherein the growth temperature of the third AlN layer is 900-1000 ℃, the pressure is 50-100torr, the TMAl flow is 200-300sccm, and NH3The flow is 1-8 slm;
4) growing a fourth AlN layer on the third AlN layer, wherein the growth temperature of the fourth AlN layer is 1000-1100 ℃, the pressure is 50-100tor, the TMAl flow is 250-350sccm, and NH is adopted3The flow rate was 1-8 slm.
Further, in step 2), NH of the second AlN layer is grown3Flow rate of NH less than that of first AlN layer3Flow rate;
in step 3), NH of a third AlN layer is grown3Flow rate of NH less than that of first AlN layer3Flow rate;
in step 4), NH of a fourth AlN layer is grown3Flow rate less thanGrowing NH of the second AlN layer and the third AlN layer3Flow rate; the flow rate of TMAl for growing the fourth AlN layer is larger than the flow rates of TMAl for growing the second AlN layer and the third AlN layer.
Further, the thickness of the first AlN layer is 10 to 50 nm;
the thickness of the second AlN layer is 20-80 nm;
the thickness of the third AlN layer is 20-80 nm;
the thickness of the fourth AlN layer is 150-300 nm.
Further, the thickness of the second AlN layer is greater than the thickness of the first AlN layer; the thickness of the third AlN layer is greater than the thickness of the first AlN layer.
Further, the unintended doped layer is one or the combination of more than two of AlN, AlGaN and InAlGaN; the growth temperature of the unintentional doping layer is 1000-1400 ℃.
Further, the n-type doped layer is one or the combination of more than two of AlN, AlGaN and InAlGaN; the growth temperature of the n-type doped layer is 1000-1400 ℃, and the doping concentration of Si in the n-type doped layer is 1e 18-3 e19Atom/cm3。
Further, the multiple quantum well light-emitting layer is (Al)xGa1-xN/AlyGa1-yN)nWherein x is 0.2-0.4, y is 0.3-0.6, and n is 5-10; the growth temperature of the multiple quantum well light-emitting layer is 900-1100 ℃.
Further, the EBL layer is any one or combination of more than two of p-AlGaN, p-AlInGaN and p-AlN, and the Mg doping concentration in the EBL layer is 5e 18-3.5 e19Atom/cm3；
The Mg doping concentration in the p-type AlGaN layer can be 5e 18-1 e20Atom/cm3；
The substrate is any one of sapphire, silicon and silicon carbide.
Further, the thickness of the unintentional doping layer is 2.0-4.0 μm;
the thickness of the n-type doped layer is 1-4 mu m;
in the multiple quantum well luminescent layer, potential well AlxGa1-xThe thickness of N is 2-4 nm, and the potential barrier is AlyGa1-yThe thickness of N is 3-10 nm;
the thickness of the EBL layer is 30-80 nm;
the thickness of the p-type AlGaN layer is 30-150 nm.
The second purpose of the invention is realized by adopting the following technical scheme:
a UV LED epitaxial structure is manufactured by the growing method of the UV LED epitaxial structure.
Compared with the prior art, the invention has the beneficial effects that:
according to the growth method of the UV LED epitaxial structure, the grown buffer layer comprises the first AlN layer, the second AlN layer, the third AlN layer and the fourth AlN layer which are sequentially superposed, the buffer layer with good crystal quality and surface is obtained, the buffer layer can improve the crystal quality of an LED epitaxial wafer, non-radiative recombination caused by defects is reduced, the recombination probability of electrons and holes is improved, the internal quantum efficiency is improved, and the luminous efficiency is greatly improved.
The UV LED epitaxial structure has good crystal quality and high luminous efficiency.
Drawings
Fig. 1 is a schematic structural diagram of a UV LED epitaxial structure of the present invention.
Wherein, 1, a substrate; 2. a buffer layer; 3. an unintentionally doped layer; 4. an n-type doped layer; 5. a multiple quantum well light emitting layer; 51. a potential well; 52. a potential barrier; 6. an EBL layer; 7. a p-type AlGaN layer.
Detailed Description
The present invention is further described with reference to the accompanying drawings and the detailed description, and it should be noted that, in the case of no conflict, any combination between the embodiments or technical features described below may form a new embodiment.
Example 1
A UV LED epitaxial structure, as shown in fig. 1, comprising: a buffer layer 2, an unintended doping layer 3, an n-type doping layer 4, a multiple quantum well light-emitting layer 5, an EBL layer 6, and a p-type AlGaN layer 7 are grown in this order on a substrate 1.
Further, the substrate 1 is sapphire;
the buffer layer 2 comprises a first AlN layer, a second AlN layer, a third AlN layer and a fourth AlN layer which are sequentially superposed;
the unintentionally doped layer 3 is AlN.
The n-type doped layer 4 is AlGaN;
the multiple quantum well luminescent layer 5 is (Al)xGa1-xN/AlyGa1-yN)nWherein x is 0.2, y is 0.3, and n is 5;
the EBL layer 6 is a p-AlGaN barrier layer.
The growth method of the UV LED epitaxial structure comprises the following steps:
1. preparing a growth buffer layer 2:
1) growing a first AlN layer on the substrate 1, wherein the growth temperature of the first AlN layer is 800 ℃, the pressure is 50torr, the TMAl flow is 100sccm, and NH is generated3The flow rate is 3 slm; the thickness of the first AlN layer is 10-20 nm;
2) growing a second AlN layer on the first AlN layer, wherein the growth temperature of the second AlN layer is 1000 ℃, the pressure is 50torr, the TMAl flow is 200sccm, and NH is carried out3The flow rate is 2 slm; the thickness of the second AlN layer is 30-40 nm;
3) growing a third AlN layer on the second AlN layer, wherein the growth temperature of the third AlN layer is 900 ℃, the pressure is 50torr, the TMAl flow is 200sccm, and NH is carried out3The flow rate is 2 slm; the thickness of the third AlN layer is 30-40 nm;
4) growing a fourth AlN layer on the third AlN layer, wherein the growth temperature of the fourth AlN layer is 1000 ℃, the pressure is 50tor, the TMAl flow is 250sccm, and NH is adopted3The flow rate is 1 slm; the thickness of the fourth AlN layer is 150-200 nm.
2. Growing the unintentional doped layer 3 and the n-doped layer 4:
the unintended doped layer 3 is AlN, and the absorption wavelength of the material of the unintended doped layer is smaller than that of UV Ll ED; the growth temperature of the unintentional doping layer 3 is 1000 ℃, and the thickness of the obtained unintentional doping layer 3 is 2.0-3 μm.
The n-type doped layer4 is AlGaN, and the absorption wavelength of the material is less than that of the UV LED; the growth temperature of the n-type doped layer 4 is 1000 ℃, and the doping concentration of Si in the n-type doped layer 4 is 1e 18-3 e19Atom/cm3(ii) a The thickness of the n-type doped layer 4 is 1-2 μm.
3. Growing the multiple quantum well light-emitting layer 5:
further, the multiple quantum well light emitting layer 5 is (Al)xGa1-xN/AlyGa1-yN)nThe growth temperature is 900-1100 ℃;
the multiple quantum well light emitting layer 5 is composed of multiple quantum well structures which are sequentially stacked in multiple periods, and the multiple quantum well structures include mutually connected potential wells 51 (Al)xGa1-xN) and potential barrier 52 (Al)yGa1-yN)；
In the multi-quantum well structure, the total thickness of the potential well 51 is 2-4 nm, and the total thickness of the potential barrier 52 is 3-10 nm; in the multiple quantum well light-emitting layer 5, the period n is 5.
4. And (3) growing the EBL layer 6:
the EBL layer 6 is a p-AlGaN barrier layer, and the Mg doping concentration in the EBL layer 6 is 5e 18-3.5 e19Atom/cm3The thickness of the EBL layer 6 is 30-80 nm.
5. Growing the p-type AlGaN layer 7:
the Mg doping concentration in the p-type AlGaN layer 7 can be 5e 18-1 e20Atom/cm3(ii) a The thickness is 30 to 150 nm.
The UV LED epitaxial structure can improve the crystal quality of an LED epitaxial wafer, reduce non-radiative recombination caused by defects, improve the recombination probability of electrons and holes, improve the internal quantum efficiency and greatly improve the luminous efficiency.
Example 2
A UV LED epitaxial structure, as shown in fig. 1, comprising: a buffer layer 2, an unintentional doping layer 3, an n-type doping layer 4, a multiple quantum well light-emitting layer 5, an EBL layer 6, and a p-type AlGaN layer 7 are sequentially grown on a substrate 1.
Further, the substrate 1 is a silicon substrate 1;
the buffer layer 2 comprises a first AlN layer, a second AlN layer, a third AlN layer and a fourth AlN layer which are sequentially superposed;
the unintentional doping layer 3 is AlGaN;
the n-type doped layer 4 is InAlGaN;
the multiple quantum well light-emitting layer 5 is (Al)xGa1-xN/AlyGa1-yN)nWherein x is 0.3, y is 0.5, and n is 8;
the EBL layer 6 is a p-AlInGaN barrier layer.
The growth method of the UV LED epitaxial structure comprises the following steps:
1. preparing a growth buffer layer 2:
1) growing a first AlN layer on the substrate 1, wherein the growth temperature of the first AlN layer is 850 ℃, the pressure is 75torr, the TMAl flow is 150sccm, and NH is generated3The flow rate is 6 slm; the thickness of the first AlN layer is 20-30 nm;
2) growing a second AlN layer on the first AlN layer, wherein the growth temperature of the second AlN layer is 1050 ℃, the pressure is 70torr, the TMAl flow is 250sccm, and NH is carried out3The flow rate is 4 slm; the thickness of the second AlN layer is 40-50 nm;
3) growing a third AlN layer on the second AlN layer, wherein the growth temperature of the third AlN layer is 950 ℃, the pressure is 70torr, the TMAl flow is 250sccm, and NH is adopted3The flow rate is 4 slm; the thickness of the third AlN layer is 40-50 nm;
4) growing a fourth AlN layer on the third AlN layer, wherein the growth temperature of the fourth AlN layer is 1050 ℃, the pressure is 50-100tor, the TMAl flow is 300sccm, and NH is adopted3The flow rate is 2 slm; the thickness of the fourth AlN layer is 200-300 nm.
2. Growing the unintentional doped layer 3 and the n-type doped layer 4:
the unintentional doping layer 3 is AlGaN, and the absorption wavelength of the material is less than that of the UV LED; the growth temperature of the unintended doping layer 3 is 1200 ℃, and the thickness of the acquired unintended doping layer 3 is 3.0-4.0 μm.
The n-type doped layer 4 is InAlGaN, and the absorption wavelength of the material is less than that of the UV LED; the growth temperature of the n-type doped layer 4 is 1200 ℃, and the doping concentration of Si in the n-type doped layer 4 is 1e18～3e19 Atom/cm3(ii) a The thickness of the n-type doped layer 4 is 2-3 μm.
3. Growing the multiple quantum well light-emitting layer 5:
further, the multiple quantum well light emitting layer 5 is (Al)xGa1-xN/AlyGa1-yN)nThe growth temperature is 900-1100 ℃;
the multiple quantum well light emitting layer 5 is composed of multiple quantum well structures which are sequentially stacked in multiple periods, and the multiple quantum well structures include mutually connected potential wells 51 (Al)xGa1-xN) and potential Barrier 52 (Al)yGa1-yN)；
In the multi-quantum well structure, the total thickness of the potential well 51 is 2-4 nm, and the total thickness of the potential barrier 52 is 3-10 nm; in the multiple quantum well light-emitting layer 5, the period n is 8.
4. And (3) growing the EBL layer 6:
the EBL layer 6 is a p-AlInGaN barrier layer, and the Mg doping concentration in the EBL layer 6 is 5e 18-3.5 e19Atom/cm3The thickness of the EBL layer 6 is 30-80 nm.
5. Growing the p-type AlGaN layer 7:
the Mg doping concentration in the p-type AlGaN layer 7 can be 5e 18-1 e20Atom/cm3(ii) a The thickness is 30-150 nm.
The UV LED epitaxial structure can improve the crystal quality of an LED epitaxial wafer, reduce non-radiative recombination caused by defects, improve the recombination probability of electrons and holes, improve the internal quantum efficiency and greatly improve the luminous efficiency.
Example 3
A UV LED epitaxial structure, as shown in fig. 1, comprising: a buffer layer 2, an unintentional doping layer 3, an n-type doping layer 4, a multiple quantum well light-emitting layer 5, an EBL layer 6, and a p-type AlGaN layer 7 are sequentially grown on a substrate 1.
Further, the substrate 1 is silicon carbide;
the buffer layer 2 comprises a first AlN layer, a second AlN layer, a third AlN layer and a fourth AlN layer which are sequentially superposed;
the unintentional doping layer 3 is InAlGaN;
the n-type doped layer 4 is InAlGaN;
the multiple quantum well luminescent layer 5 is (Al)xGa1-xN/AlyGa1-yN)nWherein x is 0.4, y is 0.6, and n is 10;
the EBL layer 6 is a p-AlN barrier layer.
The growth method of the UV LED epitaxial structure comprises the following steps:
1. preparing a growth buffer layer 2:
1) growing a first AlN layer on the substrate 1, wherein the growth temperature of the first AlN layer is 900 ℃, the pressure is 100torr, the TMAl flow is 200sccm, and NH is generated3The flow rate is 10 slm; the thickness of the first AlN layer is 40-50 nm;
2) growing a second AlN layer on the first AlN layer, wherein the growth temperature of the second AlN layer is 1100 ℃, the pressure is 100torr, the TMAl flow is 300sccm, and NH is carried out3The flow rate is 8 slm; the thickness of the second AlN layer is 70-80 nm;
3) growing a third AlN layer on the second AlN layer, wherein the growth temperature of the third AlN layer is 1000 ℃, the pressure is 100torr, the TMAl flow is 300sccm, and NH is carried out3The flow rate is 8 slm; the thickness of the third AlN layer is 70-80 nm;
4) growing a fourth AlN layer on the third AlN layer, wherein the growth temperature of the fourth AlN layer is 1100 ℃, the pressure is 100tor, the TMAl flow is 350sccm, and NH is adopted3The flow rate is 6 slm; the thickness of the fourth AlN layer is 200-300 nm.
2. Growing the unintentional doped layer 3 and the n-doped layer 4:
the unintended doping layer 3 is InAlGaN, and the absorption wavelength of the material is less than that of the UV LED; the growth temperature of the unintended doping layer 3 is 1400 ℃, and the thickness of the obtained unintended doping layer 3 is 3.0-4.0 μm.
The n-type doped layer 4 is InAlGaN, and the absorption wavelength of the material is less than that of the UV LED; the growth temperature of the n-type doped layer 4 is 1400 ℃, and the doping concentration of Si in the n-type doped layer 4 is 1e 18-3 e19Atom/cm3(ii) a The thickness of the n-type doped layer 4 is 3-4 μm.
3. Growing the multiple quantum well light-emitting layer 5:
further, the multiple quantum well light emitting layer 5 is (Al)xGa1-xN/AlyGa1-yN)nThe growth temperature is 900-1100 ℃;
the multiple quantum well light emitting layer 5 is composed of multiple quantum well structures which are sequentially stacked in multiple periods, and the multiple quantum well structures include mutually connected potential wells 51 (Al)xGa1-xN) and potential barrier 52 (Al)yGa1-yN)；
In the multiple quantum well structure, well 51AlxGa1-xN, the total thickness is 3-4 nm, and the total thickness of the potential barrier 52 is 5-10 nm; in the multiple quantum well light-emitting layer 5, the period n is 10.
4. And (3) growing the EBL layer 6:
the EBL layer 6 is a p-AlN barrier layer, and the Mg doping concentration in the EBL layer 6 is 5e 18-3.5 e19Atom/cm3The thickness of the EBL layer 6 is 50-80 nm.
5. Growing the p-type AlGaN layer 7:
the Mg doping concentration in the p-type AlGaN layer 7 can be 5e 18-1 e20Atom/cm3(ii) a The thickness is 30-150 nm.
The UV LED epitaxial structure can improve the crystal quality of an LED epitaxial wafer, reduce non-radiative recombination caused by defects, improve the recombination probability of electrons and holes, improve the internal quantum efficiency and greatly improve the luminous efficiency.
Example 4
A UV LED epitaxial structure, as shown in fig. 1, comprising: a buffer layer 2, an unintentional doping layer 3, an n-type doping layer 4, a multiple quantum well light-emitting layer 5, an EBL layer 6, and a p-type AlGaN layer 7 are sequentially grown on a substrate 1.
Further, the substrate 1 is a silicon substrate 1;
the buffer layer 2 comprises a first AlN layer, a second AlN layer, a third AlN layer and a fourth AlN layer which are sequentially superposed;
the unintended doped layer 3 is an AlN-AlGaN composite layer;
the n-type doped layer 4 is an AlGaN superlattice layer;
the multiple quantum well luminescent layer 5 is (Al)xGa1-xN/AlyGa1-yN)nWherein x is 0.3, y is 0.5, and n is 7;
the EBL layer 6 is a p-type AlN-AlGaN composite blocking layer.
The growth method of the UV LED epitaxial structure comprises the following steps:
1. preparing a growth buffer layer 2:
1) growing a first AlN layer on the substrate 1, wherein the growth temperature of the first AlN layer is 850 ℃, the pressure is 70torr, the TMAl flow is 150sccm, and NH is generated3The flow rate is 6 slm; the thickness of the first AlN layer is 30-40 nm;
2) growing a second AlN layer on the first AlN layer, wherein the growth temperature of the second AlN layer is 1050 ℃, the pressure is 70torr, the TMAl flow is 250sccm, and NH is carried out3The flow rate is 5 slm; the thickness of the second AlN layer is 40-50 nm;
3) growing a third AlN layer on the second AlN layer, wherein the growth temperature of the third AlN layer is 950 ℃, the pressure is 70torr, the TMAl flow is 240ccm, and NH is generated3The flow rate is 4 slm; the thickness of the third AlN layer is 50-60 nm;
4) growing a fourth AlN layer on the third AlN layer, wherein the growth temperature of the fourth AlN layer is 1050 ℃, the pressure is 70tor, the TMAl flow is 280sccm, and NH is adopted3The flow rate is 3 slm; the thickness of the fourth AlN layer is 200-300 nm.
2. Growing the unintentional doped layer 3 and the n-type doped layer 4:
the unintended doped layer 3 is a stacked AlN-AlGaN composite layer, and the absorption wavelength of the material is less than that of the UV LED; the growth temperature of the unintended doping layer 3 is 1300 ℃, and the thickness of the acquired unintended doping layer 3 is 2.5-3.5 μm.
The n-type doped layer 4 is an AlGaN superlattice layer, and the absorption wavelength of the material is less than that of the UV LED; the growth temperature of the n-type doped layer 4 is 1300 ℃, and the doping concentration of Si in the n-type doped layer 4 is 1e 18-3 e19Atom/cm3(ii) a The thickness of the n-type doped layer 4 is 2-3 μm.
3. Growing the multiple quantum well light-emitting layer 5:
further, the multiple quantum well emits lightLayer 5 is (Al)xGa1-xN/AlyGa1-yN)nThe growth temperature is 900-1100 ℃;
the multiple quantum well light emitting layer 5 is composed of multiple quantum well structures which are sequentially stacked in multiple periods, and the multiple quantum well structures include mutually connected potential wells 51 (Al)xGa1-xN) and potential Barrier 52 (Al)yGa1-yN)；
In the multi-quantum well structure, the total thickness of the potential well 51 is 2-4 nm, and the total thickness of the potential barrier 52 is 5-10 nm; in the multiple quantum well light-emitting layer 5, the period n is 7.
4. And (3) growing the EBL layer 6:
the EBL layer 6 is a p-type AlN-AlGaN composite barrier layer, and the Mg doping concentration in the EBL layer 6 is 5e 18-3.5 e19Atom/cm3The thickness of the EBL layer 6 is 50-80 nm.
5. Growing the p-type AlGaN layer 7:
the Mg doping concentration in the p-type AlGaN layer 7 can be 5e 18-1 e20Atom/cm3(ii) a The thickness is 60 to 100 nm.
The UV LED epitaxial structure can improve the crystal quality of an LED epitaxial wafer, reduce non-radiative recombination caused by defects, improve the recombination probability of electrons and holes, improve the internal quantum efficiency and greatly improve the luminous efficiency.
The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are within the protection scope of the present invention.

Claims (10)

1. A growth method of a UV LED epitaxial structure is characterized by comprising the following steps: sequentially growing a buffer layer, an unintended doping layer, an n-type doping layer, a multi-quantum well light-emitting layer, an EBL layer and a p-type AlGaN layer on a substrate;
the buffer layer comprises a first AlN layer, a second AlN layer, a third AlN layer and a fourth AlN layer which are sequentially superposed, and the growth method comprises the following steps:
1) growing a first AlN layer on a substrate at a growth temperature800-900 deg.C, 50-100torr pressure, 100 TMAl flow rate, 200sccm, NH3The flow rate is 2-10 slm;
2) growing a second AlN layer on the first AlN layer, wherein the growth temperature of the second AlN layer is 1000-1100 ℃, the pressure is 50-100torr, the TMAl flow is 200-300sccm, and NH3The flow is 1-8 slm;
3) growing a third AlN layer on the second AlN layer, wherein the growth temperature of the third AlN layer is 900-1000 ℃, the pressure is 50-100torr, the TMAl flow is 200-300sccm, and NH3The flow rate is 1-8 slm;
4) growing a fourth AlN layer on the third AlN layer, wherein the growth temperature of the fourth AlN layer is 1000-1100 ℃, the pressure is 50-100tor, the TMAl flow is 250-350sccm, and NH is adopted3The flow rate was 1-8 slm.
2. The method for growing a UV LED epitaxial structure according to claim 1, wherein in step 2), NH of the second AlN layer is grown3Flow rate of NH less than that of first AlN layer3Flow rate;
in step 3), NH of a third AlN layer is grown3Flow rate of NH less than that of first AlN layer3Flow rate;
in step 4), NH of a fourth AlN layer is grown3The flow rate is less than NH for growing the second AlN layer and the third AlN layer3Flow rate; the flow rate of TMAl for growing the fourth AlN layer is larger than that for growing the second AlN layer and the third AlN layer.
3. The method for growing a UV LED epitaxial structure according to claim 1 or 2, characterized in that the first AlN layer has a thickness of 10-50 nm;
the thickness of the second AlN layer is 20-80 nm;
the thickness of the third AlN layer is 20-80 nm;
the thickness of the fourth AlN layer is 150-300 nm.
4. The method of growing a UV LED epitaxial structure of claim 3, wherein the second AlN layer has a thickness greater than the first AlN layer; the third AlN layer has a thickness greater than that of the first AlN layer.
5. The method for growing a UV LED epitaxial structure according to claim 1, wherein the unintentional doping layer is any one or a combination of two or more of AlN, AlGaN, and InAlGaN; the growth temperature of the unintentional doping layer is 1000-1400 ℃.
6. The method for growing a UV LED epitaxial structure according to claim 1, wherein the n-type doped layer is any one or a combination of two or more of AlN, AlGaN and InAlGaN; the growth temperature of the n-type doped layer is 1000-1400 ℃, and the doping concentration of Si in the n-type doped layer is 1e 18-3 e19Atom/cm3。
7. The method for growing a UV LED epitaxial structure of claim 1, wherein the multiple quantum well light emitting layer is (Al)xGa1-xN/AlyGa1-yN)nWherein x is 0.2-0.4, y is 0.3-0.6, and n is 5-10; the growth temperature of the multiple quantum well light-emitting layer is 900-1100 ℃.
8. The growth method of the UV LED epitaxial structure of claim 1, wherein the EBL layer is any one or a combination of two or more of p-AlGaN, p-AlInGaN and p-AlN, and the Mg doping concentration in the EBL layer is 5e 18-3.5 e19Atom/cm3；
The Mg doping concentration in the p-type AlGaN layer can be 5e 18-1 e20Atom/cm3；
The substrate is any one of sapphire, silicon and silicon carbide.
9. The method for growing the UV LED epitaxial structure of any one of claims 5to 8, wherein the thickness of the unintentionally doped layer is 2.0 to 4.0 μm;
the thickness of the n-type doped layer is 1-4 mu m;
in the multiple quantum well light emitting layer, potentialTrap AlxGa1-xN is 2-4 nm thick and barrier AlyGa1-yThe thickness of N is 3-10 nm;
the thickness of the EBL layer is 30-80 nm;
the thickness of the p-type AlGaN layer is 30-150 nm.
10. A UV LED epitaxial structure, characterized by being made by the growth method of a UV LED epitaxial structure according to any one of claims 1 to 9.
CN202210223355.1A 2022-03-09 2022-03-09 UV LED epitaxial structure and growth method thereof Pending CN114744083A (en)

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