CN114743720A - Transparent conductive film, preparation method thereof and photoelectric device - Google Patents
Transparent conductive film, preparation method thereof and photoelectric device Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 8
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Non-Insulated Conductors (AREA)
Abstract
The invention discloses a transparent conductive film, a preparation method and a photoelectric device, wherein the transparent conductive film comprises: a transparent substrate; a first transparent dielectric layer on one side of the transparent substrate; the metal layer is positioned on one side, far away from the transparent substrate, of the first transparent dielectric layer; a second transparent dielectric layer on a side of the metal layer remote from the first transparent dielectric layer, wherein the metal layer is a silver alloy comprising silver and a doping element comprising a first doping element comprising at least one of copper, aluminum, titanium, chromium, molybdenum, and nickel, and a second doping element comprising at least one of scandium, yttrium, and a lanthanide. Therefore, the transparent conductive film has the characteristics of high damp-heat stability, low preparation cost and simple preparation process.
Description
Technical Field
The invention relates to the field of electronic devices, in particular to a transparent conductive film, a preparation method thereof and a photoelectric device.
Background
In recent years, with the rapid development of flexible photoelectric technology, new technologies and new products such as flexible OLED display, flexible OLED lighting, large-area touch screens, electrochromic intelligent window films, liquid crystal dimming films, thin film solar cells, transparent antennas, transparent electromagnetic wave shielding films and the like have emerged in the market, and meanwhile, the requirements on the properties such as low resistance, flexibility, high light transmittance and the like of the transparent conductive film are also provided. The traditional ITO transparent conductive film is difficult to meet the requirements of flexible photoelectric devices due to performance limitations such as high resistance, poor flexibility and the like, and the search for ITO transparent electrode substitute materials is an urgent need for the development of the flexible photoelectric industry.
The dielectric layer/metal layer/dielectric layer (DMD) laminated transparent conductive film is one of novel indium-free transparent conductive films, and the transmittance of the film can be adjusted by adjusting the thicknesses of the dielectric layers on two sides of the metal layer, so that the film has high transmittance in a visible light region while obtaining high conductivity. Wherein Ag has low optical loss in visible light band and low resistivity (1.62 × 10)-8Ω · m), and therefore has received most attention as a metal layer material of the DMD laminated transparent conductive film. However, when Ag is used as a metal layer material of the transparent conductive film, the stability of the transparent conductive film is poor, and the photoelectric properties are easily degraded in the using process, so that the practical value is lost.
Therefore, the transparent conductive film, the method for preparing the same and the photoelectric device still need to be improved.
Disclosure of Invention
The present invention is based on the discovery and recognition by the inventors of the following facts and problems:
the inventors have found that although Ag has low optical loss in the visible light band and low specific resistance, and is effective as a metal layer material of a DMD laminated transparent conductive film, when silver is used as the metal layer material, the metal layer has poor moisture and heat resistance and poor long-term stability. The method for improving the moist heat stability of Ag in the related technology still has the problems that the moist heat stability cannot completely meet the use requirement, the operation is complex, the production efficiency is low, the cost is high and the like.
The present invention aims to alleviate or solve at least to some extent at least one of the above mentioned problems.
In one aspect of the present invention, the present invention provides a transparent conductive film comprising: a transparent substrate; a first transparent dielectric layer on one side of the transparent substrate; the metal layer is positioned on one side, far away from the transparent substrate, of the first transparent dielectric layer; a second transparent dielectric layer on a side of the metal layer remote from the first transparent dielectric layer, wherein the metal layer is a silver alloy comprising silver and a doping element comprising a first doping element comprising at least one of copper, aluminum, titanium, chromium, molybdenum, and nickel, and a second doping element comprising at least one of scandium, yttrium, and a lanthanide. Therefore, the transparent conductive film has the characteristics of high damp-heat stability, low preparation cost and simple preparation process.
According to an embodiment of the present invention, the mass fraction of the doping element in the silver alloy is not more than 10 wt%, and the mass fraction of the second doping element in the doping element is not more than 5 wt%. This can further improve the wet heat stability of the transparent conductive film.
According to an embodiment of the invention, the thickness of the metal layer is 1-30 nm. This can further improve the wet heat stability of the transparent conductive film.
According to an embodiment of the present invention, the material of the first transparent dielectric layer and the material of the second transparent dielectric layer are each independently selected from at least one of a metal oxide, a dopant of a metal oxide, a metal sulfide, a metal fluoride, an oxide of silicon, and a nitride of silicon. This can improve the conductivity of the transparent conductive film.
According to an embodiment of the present invention, the thickness of the first transparent dielectric layer is 5-100nm, and the thickness of the second transparent dielectric layer is 5-100 nm. This can further improve the conductivity of the transparent conductive film.
According to an embodiment of the present invention, the material of the transparent substrate includes at least one of polyethylene terephthalate, polyimide, polyethylene naphthalate, polycarbonate, polystyrene, and cellulose triacetate. This can improve the structural stability of the transparent conductive film.
According to an embodiment of the invention, the transparent substrate has a thickness of 1-500 μm. This can improve the structural stability of the transparent conductive film.
According to the embodiment of the invention, the square resistance value of the transparent conductive film is not more than 30 omega/□, and the square resistance value change rate of the transparent conductive film is not more than 30% after the transparent conductive film is aged at 60 ℃ and 90% RH for 240 hours. Therefore, the transparent conductive film has better humidity and heat resistance.
In another aspect of the present invention, the present invention provides a method for preparing the transparent conductive film, comprising: the method comprises the steps of sequentially forming a first transparent dielectric layer, a metal layer and a second transparent dielectric layer on one side of a transparent substrate, wherein the first transparent dielectric layer, the metal layer and the second transparent dielectric layer are formed by adopting a magnetron sputtering method. Therefore, the transparent conductive film with high humidity resistance can be prepared by a simple method.
In yet another aspect of the present invention, the present invention provides an optoelectronic device comprising the aforementioned transparent conductive film. Thus, the photoelectric device has all the characteristics and advantages of the transparent conductive film, and the description is omitted.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 shows a schematic structural view of a transparent conductive film according to an embodiment of the present invention.
Description of reference numerals:
100: a transparent substrate; 200: a first transparent dielectric layer; 300: a metal layer; 400: a second transparent dielectric layer.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In one aspect of the present invention, the present invention provides a transparent conductive film, referring to fig. 1, including: a transparent substrate 100; a first transparent dielectric layer 200, the first transparent dielectric layer 200 being positioned at one side of the transparent substrate 100; a metal layer 300, wherein the metal layer 300 is positioned on one side of the first transparent dielectric layer 200 far away from the transparent substrate 100; a second transparent dielectric layer 400, the second transparent dielectric layer 400 being located on a side of the metal layer 300 remote from the first transparent dielectric layer 200, wherein the metal layer 300 is a silver alloy, the silver alloy comprising silver and a doping element, the doping element comprising a first doping element comprising at least one of copper, aluminum, titanium, chromium, molybdenum and nickel and a second doping element comprising at least one of scandium, yttrium and a lanthanoid. By adding the doping elements into the metal layer, the transparent conductive film has the advantages of low resistance, high light transmittance, high temperature resistance, excellent high humidity resistance, bending resistance, low cost and the like, and can be used as a transparent electrode structure and applied to various photoelectric devices.
For ease of understanding, the following description will be made on the principle that the transparent conductive film in the present application has the above-described advantageous effects:
in the related technology, elements such as palladium, gold and platinum are doped in the Ag metal layer, or a noble metal protective layer is arranged on the surface of the Ag metal layer, so that the temperature and humidity resistance of the transparent conductive film can be improved to a certain extent.
In the application, the inventor dopes copper, aluminum, titanium, chromium, molybdenum, nickel, rare earth elements and the like in a silver metal layer to form a silver alloy metal layer, and the addition of the doping elements can obviously improve the recrystallization temperature of the silver alloy, so that the high-temperature stability of the silver alloy is improved; in addition, the doping elements can also play a role in purifying impurities in the alloy target smelting process or the magnetron sputtering process, and are beneficial to improving the oxidation resistance of the silver alloy metal layer; meanwhile, the doping elements are easy to form a thin and compact oxide film on the surface of the metal layer, can obviously improve the oxidation resistance and the corrosion resistance of the silver alloy metal layer, is pollution-free and is beneficial to environmental protection. In addition, the doping elements are non-noble metal elements, such as copper, aluminum, titanium, chromium, molybdenum, nickel, rare earth elements and the like. Compared with the technical scheme of doping the noble metal elements in the related technology, the transparent conductive film in the application not only further improves the high-temperature and high-humidity resistance of the transparent conductive film, but also greatly reduces the manufacturing cost of the conductive film. In summary, the transparent conductive film in the present application has the advantages of good high temperature and high humidity resistance and low manufacturing cost.
According to some embodiments of the present invention, the kind of the doping element is not particularly limited as long as it can significantly improve the moisture and heat resistance of the metal layer while having a low cost, for example, the first doping element may include at least one of copper, aluminum, titanium, chromium, molybdenum, and nickel; the second doping element may comprise at least one of scandium, yttrium and a lanthanide; further, the lanthanoid element may include at least one of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium, and preferably, the lanthanoid element may include at least one of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, and yttrium.
According to some embodiments of the present invention, the mass fraction of the doping element in the silver alloy is not particularly limited, for example, when the mass fraction of the doping element in the silver alloy is not more than 10 wt%, the mass fraction of the second doping element in the doping element may be not more than 5 wt%; preferably, when the mass fraction of the doping element in the silver alloy is not more than 5 wt%, the mass fraction of the second doping element in the doping element is not more than 3 wt%. Therefore, the resistance value of the metal layer can not be obviously increased by adding the doping element, and meanwhile, the oxidation resistance, the corrosion resistance and the high-temperature stability of the transparent conductive film can be effectively improved.
According to some embodiments of the present invention, the thickness of the metal layer is not particularly limited, for example, the thickness of the metal layer may be 1 to 30nm, and preferably, the thickness of the metal layer may be 5 to 20 nm. When the thickness of the metal layer is less than 1nm, the thickness of the metal layer is too thin, the film layer cannot form a continuous state, and the metal layer has high resistance and low light transmittance; when the thickness of the metal layer is greater than 30nm, the metal layer film is too thick, and although the resistance of the metal layer is significantly reduced, the light transmittance of the metal layer is also sharply reduced. When the thickness of the metal layer is within the above range, the metal layer has a lower electrical resistance and a higher light transmittance.
According to some embodiments of the present invention, the material forming the first transparent dielectric layer and the material of the second transparent dielectric layer are not particularly limited, for example, the material forming the first transparent dielectric layer and the material forming the second transparent dielectric layer may be each independently selected from at least one of metal oxides, dopants of metal oxides, metal sulfides, metal fluorides, oxides of silicon, and nitrides of silicon, and preferably, the material forming the first transparent dielectric layer and the second transparent dielectric layer may be each independently selected from at least one of indium tin oxide, niobium pentoxide, titanium dioxide, bismuth oxide, tungsten trioxide, nickel oxide, zinc oxide, gallium zinc oxide, indium zinc oxide, silicon dioxide, hafnium dioxide, zirconium oxide, aluminum-doped zinc oxide, aluminum oxide, indium oxide, tin oxide, zinc sulfide, silicon nitride, and magnesium fluoride. Therefore, the photoelectric property and the humidity and heat resistance stability of the transparent conductive film are further improved.
According to some embodiments of the present invention, the thickness of the first transparent dielectric layer and the thickness of the second transparent dielectric layer are not particularly limited, and the thicknesses of the first transparent dielectric layer and the second transparent dielectric layer may be the same or different. Specifically, the thickness of the first transparent dielectric layer may be in the range of 5-100nm, the thickness of the second transparent dielectric layer may be in the range of 5-100nm, and preferably, the thickness of each of the first transparent dielectric layer and the second transparent dielectric layer may be in the range of 10-60 nm. Therefore, the photoelectric property and the humidity and heat resistance stability of the transparent conductive film are further improved.
According to some embodiments of the present invention, the material forming the transparent substrate is not particularly limited, and for example, the material forming the transparent substrate may include at least one of polyethylene terephthalate, polyimide, polyethylene naphthalate, polycarbonate, polystyrene, and cellulose triacetate. Through the selection of the material for forming the transparent substrate, the transparent conductive film can be a rigid conductive film or a flexible conductive film, so that the application range of the transparent conductive film is wider.
According to some embodiments of the present invention, the thickness of the transparent substrate is not particularly limited, for example, the thickness of the transparent substrate may range from 1 to 500 μm, and preferably, the thickness of the transparent substrate is from 5 to 250 μm. When the thickness of the transparent substrate is within the range, the transparent substrate has better flexibility, which is beneficial to improving the flexibility of the transparent conductive film, and the transparent substrate has higher strength and can be used as a support carrier of other layers. The inventors found that when the thickness of the transparent substrate exceeds 500 μm, the stiffness of the transparent substrate is too large to cause a significant decrease in flexibility of the transparent substrate.
According to some embodiments of the present invention, the haze and the visible light transmittance of the transparent conductive film are not particularly limited, for example, the transparent conductive film in the present application may enable the transparent conductive film to have higher light transmittance and lower haze through adjustment of the material of each film layer and the thickness of each film layer, specifically, the visible light transmittance of the transparent conductive film may be not less than 80%, and the haze of the transparent conductive film may not exceed 1%. The transparent conductive film has good transparent effect, and can be used as a transparent electrode structure with high requirements.
According to some embodiments of the present invention, when the haze of the transparent conductive film is not more than 1% and the visible light transmittance is not less than 80%, the sheet resistance value of the transparent conductive film may be not more than 30 Ω/□. It can be seen that the resistance of the transparent conductive film is small. Further, the transparent conductive film was set at 60 ℃ and 90% RH (90% relative humidity), and after a 240-hour aging test, it was found that the rate of change in the sheet resistance value of the transparent conductive film did not exceed 30%. Therefore, the transparent conductive film has better humidity resistance and heat resistance, and can meet the long-term use requirements under various working conditions.
In another aspect of the present invention, the present invention provides a method for preparing the transparent conductive film, comprising: and sequentially forming a first transparent dielectric layer, a metal layer and a second transparent dielectric layer on one side of the transparent substrate, wherein the first transparent dielectric layer, the metal layer and the second transparent dielectric layer are formed by adopting a magnetron sputtering method. Therefore, the transparent conductive film with high humidity resistance can be prepared by a simple method. The materials, thicknesses, etc. of the metal layer, the first transparent dielectric layer, and the second transparent dielectric layer are described in detail above, and are not described again here.
According to some embodiments of the present invention, when the metal layer 300 is disposed on the side of the first transparent dielectric layer 200 away from the transparent substrate 100 by using a magnetron sputtering method, the metal layer may be prepared by a direct current magnetron sputtering method. The adoption of the direct current magnetron sputtering method for arranging the metal layer has the advantages of high film deposition efficiency, good density, good combination with the substrate, good repeatability of the sputtering process and the like.
According to some embodiments of the present invention, the process of forming the first transparent dielectric layer and the second transparent dielectric layer is not particularly limited, for example, the first transparent dielectric layer and the second transparent dielectric layer may be prepared by a magnetron sputtering method.
In yet another aspect of the present invention, the present invention provides an optoelectronic device comprising the aforementioned transparent conductive film. Therefore, the photoelectric device has all the characteristics and advantages of the transparent conductive film, and the description is omitted here.
According to some embodiments of the present invention, the kind of the photoelectric device is not particularly limited, and for example, the photoelectric device may include a touch screen, a liquid crystal dimming film, an electrochromic device, a thin film solar cell, an organic electroluminescent device, and the like.
The following embodiments are provided to illustrate the present application, and should not be construed as limiting the scope of the present application. The examples, where specific techniques or conditions are not indicated, are to be construed according to the techniques or conditions described in the literature in the art or according to the product specifications. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available.
Example 1
Sequentially laminating a first transparent dielectric layer, a metal layer and a second transparent dielectric layer on a transparent substrate, wherein the first transparent dielectric layer, the second transparent dielectric layer and the metal layer are all prepared by direct-current magnetron sputtering;
the transparent substrate is PET, the first transparent dielectric layer is ITO, the second transparent dielectric layer is ITO, the metal layer is silver alloy, and the mass fractions of silver element, titanium element and cerium element in the silver alloy are respectively 99.8 wt%, 0.1 wt% and 0.1 wt%;
the thickness of the transparent substrate was 125 μm, the thickness of the first transparent dielectric layer was 50nm, the thickness of the second transparent dielectric layer was 50nm, and the thickness of the metal layer was 5 nm.
Example 2
Example 2 was identical to example 1, except that the metal layer had a thickness of 12 nm.
Example 3
Example 3 was identical to example 1, except that the metal layer had a thickness of 20 nm.
Example 4
Example 4 was identical to example 1, except that the metal layer had a thickness of 12nm and the mass fractions of the silver element, the titanium element, and the cerium element in the silver alloy were 97 wt%, 1 wt%, and 2 wt%, respectively.
Example 5
Example 5 was identical to example 1, except that the metal layer had a thickness of 12nm and the mass fractions of the silver element, the titanium element, and the cerium element in the silver alloy were 95 wt%, 2 wt%, and 3 wt%, respectively.
Example 6
Example 6 was identical to example 1, except that the metal layer had a thickness of 12nm and the mass fractions of the silver element, the titanium element, and the cerium element in the silver alloy were 90 wt%, 5 wt%, and 5 wt%, respectively.
Comparative example 1
Comparative example 1 was identical to example 1, except that the metal layer had a thickness of 12nm and the metal layer had only silver element.
Comparative example 2
Comparative example 2 was identical to example 1, except that the metal layer had a thickness of 12nm, the metal layer comprised silver and palladium, and the mass fractions of the silver element and the palladium element in the metal layer were 97 wt% and 3 wt%, respectively.
The photoelectric performance of the transparent conductive film is tested after the transparent conductive film is balanced for 10 hours at the temperature of 80 ℃, and the surface resistance change rate of the transparent conductive film is tested after the transparent conductive film is aged for 240 hours, wherein the aging conditions are as follows: 60 ℃, 90% relative humidity, sheet resistance rate of change ═ R1-R0)/R 0100% of R, wherein0For initial measured sheet resistance, R1The sheet resistance value measured after the aging test. The test results are shown in table 1:
TABLE 1
| Performance index | Unit of | Example 1 | Example 2 | Example 3 | Example 4 | Example 5 | Example 6 | Comparative example 1 | Comparative example 2 |
| Light transmittance% | ％ | 88.0 | 86.0 | 82.5 | 85.2 | 84.6 | 81.6 | 86.5 | 82.3 |
| Haze degree | ％ | 0.60 | 0.65 | 0.81 | 0.68 | 0.72 | 0.79 | 0.70 | 0.92 |
| Surface resistance (R)0) | Ω/□ | 29.3 | 14.6 | 8.3 | 15.2 | 17.4 | 27.8 | 13.5 | 22.5 |
| Rate of change of sheet resistance | ％ | 29.0 | 26.7 | 25.3 | 5.9 | 3.5 | 3.2 | 657.8 | 123.7 |
The test result shows that:
the transparent conductive films of examples 1-6 all have a transmittance higher than 80% and a haze much less than 1%, and have a high transmittance of visible light, a low haze, and a good appearance.
The resistance values R after aging of the transparent conductive films of examples 1 to 6 measured after aging for 240 hours at 60 ℃ and 90% RH1And initial resistance value R0In contrast, the change rates are less than 30%, wherein the change rates of the resistances of the transparent conductive films in examples 4 to 6 are less than 6%, while the change rates of the sheet resistances of the transparent conductive films in comparative examples 1 and 2 are at least twice as high after aging for 240h at 60 ℃ and 90% RH, and the stability of the transparent conductive films in comparative examples 1 and 2 under high temperature and high humidity conditions is poor, so that the transparent conductive films cannot be used normally under high temperature and high humidity conditions.In contrast, the embodiments 1 to 6 in the present application show better environmental stability under high temperature and high humidity conditions, and have a better moisture and heat resistance effect than the metal layer doped with a noble metal element on the premise that the metal layer adopts a non-noble metal doped element.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. All patents and publications referred to herein are incorporated by reference in their entirety. The term "comprising" or "comprises" is open-ended, i.e. comprising what is specified in the present invention, but not excluding other aspects. In the present disclosure, all numbers disclosed herein are approximate values, whether or not the word "about" or "approximately" is used. There may be differences below 10% in the value of each number or reasonably considered by those skilled in the art, such as differences of 1%, 2%, 3%, 4% or 5%.
In the description of the present invention, it is to be understood that the terms "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, "the first feature" and "the second feature" may include one or more of the features.
In the description of the present invention, the first feature being "on" or "under" the second feature may include the first and second features being in direct contact, and may also include the first and second features being in contact with each other not directly but through another feature therebetween.
In the description of the invention, "over," "above," and "on" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.
In the description herein, references to the description of "one embodiment," "another embodiment," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction. In addition, it should be noted that the terms "first" and "second" in this specification are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to imply that the number of indicated technical features is high.
Although embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are exemplary and not to be construed as limiting the present invention, and that changes, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. A transparent conductive film, comprising:
a transparent substrate;
a first transparent dielectric layer on one side of the transparent substrate;
the metal layer is positioned on one side, far away from the transparent substrate, of the first transparent dielectric layer;
a second transparent dielectric layer on a side of the metal layer remote from the first transparent dielectric layer,
wherein the metal layer is a silver alloy, the silver alloy comprising silver and doping elements, the doping elements comprising a first doping element and a second doping element, the first doping element comprising at least one of copper, aluminum, titanium, chromium, molybdenum and nickel, the second doping element comprising at least one of scandium, yttrium and a lanthanide.
2. The transparent conductive film according to claim 1, wherein the mass fraction of the doping element in the silver alloy is not more than 10 wt%, and the mass fraction of the second doping element in the doping element is not more than 5 wt%.
3. The transparent conductive film according to claim 1, wherein the thickness of the metal layer is 1 to 30 nm.
4. The transparent conductive film according to claim 1, wherein the material of the first transparent dielectric layer and the material of the second transparent dielectric layer are each independently selected from at least one of a metal oxide, a dopant of a metal oxide, a metal sulfide, a metal fluoride, an oxide of silicon, and a nitride of silicon.
5. The transparent conductive film according to claim 1, wherein the first transparent dielectric layer has a thickness of 5 to 100nm, and the second transparent dielectric layer has a thickness of 5 to 100 nm.
6. The transparent conductive film according to claim 1, wherein the material of the transparent substrate comprises at least one of polyethylene terephthalate, polyimide, polyethylene naphthalate, polycarbonate, polystyrene, and cellulose triacetate.
7. The transparent conductive film according to claim 1, wherein the transparent substrate has a thickness of 1 to 500 μm.
8. The transparent conductive film according to claim 1, wherein the transparent conductive film has a sheet resistance value of not more than 30 Ω/□, and wherein the transparent conductive film has a sheet resistance value change rate of not more than 30% after aging at 60 ℃ and 90% RH for 240 hours.
9. A method of making the transparent conductive film of any one of claims 1-8, comprising:
the method comprises the steps of sequentially forming a first transparent dielectric layer, a metal layer and a second transparent dielectric layer on one side of a transparent substrate, wherein the first transparent dielectric layer, the metal layer and the second transparent dielectric layer are formed by adopting a magnetron sputtering method.
10. An optoelectronic device comprising the transparent conductive film of any one of claims 1-8.
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| WO2017187763A1 (en) * | 2016-04-28 | 2017-11-02 | リンテック株式会社 | Transparent conductive film and method for producing transparent conductive film |
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| CN110642529A (en) * | 2019-10-25 | 2020-01-03 | 福耀玻璃工业集团股份有限公司 | Window glass with silver alloy functional layer |
| CN113140353A (en) * | 2021-03-11 | 2021-07-20 | 中国乐凯集团有限公司 | Flexible transparent conductive film and preparation method and application thereof |
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| US20060093510A1 (en) * | 2003-12-10 | 2006-05-04 | Tanaka Kikinzoku Kogyo K.K. | Silver alloy for reflective film |
| WO2017187763A1 (en) * | 2016-04-28 | 2017-11-02 | リンテック株式会社 | Transparent conductive film and method for producing transparent conductive film |
| CN109778129A (en) * | 2019-01-08 | 2019-05-21 | 中国科学院宁波材料技术与工程研究所 | A kind of transparent conductive film based on super thin metal |
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