CN212392011U - Low-sheet-resistance transparent conductive film - Google Patents
Low-sheet-resistance transparent conductive film Download PDFInfo
- Publication number
- CN212392011U CN212392011U CN202021830250.5U CN202021830250U CN212392011U CN 212392011 U CN212392011 U CN 212392011U CN 202021830250 U CN202021830250 U CN 202021830250U CN 212392011 U CN212392011 U CN 212392011U
- Authority
- CN
- China
- Prior art keywords
- layer
- conductive film
- transparent conductive
- transparent
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model discloses a transparent conducting film is hindered to low side, include the transparent substrate by lower up range upon range of setting, the refracting index matching layer, the transition layer, metal alloy layer and transparent conducting layer, increased the water oxygen barrier layer of the substrate side of being composed jointly by refracting index matching layer and transition layer two between transparent substrate and metal alloy layer, wherein the purpose of transition layer provides a fine and close continuous conducting layer substrate for the metal alloy layer on upper strata, reduce thin layer metallic island discontinuity, its refractive index matching layer of making with high refractive index material is composed jointly behind the water oxygen barrier layer of substrate side, prevent effectively that metal alloy layer from degrading in the use jointly, make whole conducting film reliability weatherability improve by a wide margin.
Description
Technical Field
The utility model relates to a conductive film field especially relates to a transparent conductive film is hindered to low side.
Background
In recent years, with the rapid development of semiconductor manufacturing technology and photovoltaic technology, technologies such as flat panel displays, touch panels, window films, polymer dispersed liquid crystals, solar cells, and the like have been rapidly developed and perfected, and these new technologies all require the use of a transparent conductive film as an electrode, a light receiving surface, or an electromagnetic pulse shielding film. Taking a touch screen as an example, several types commonly used in touch screens, such as a resistive touch screen, a surface capacitive touch screen, and an inductive capacitive touch screen, all need to use a transparent conductive film as an electrode material.
Transparent conductive films are generally recognized as being transparent in the visible range and have a relatively low resistivity. Currently, ITO (a mixture of tin oxide and indium oxide), AZO (aluminum-doped zinc oxide), aluminum oxide, and the like are commonly used as transparent conductive films.
It was found from the literature search that M.Bender and W.Seelig et al in 1998 written "Dependence of film composition and thickness on optical and electrical properties of ITO-metal-ITO multilayers (relationship of the photoelectric properties of ITO-metal-ITO multilayer films to the film thickness and composition)" 67-71 in Thin solid films, 326(1998) in which ITO/AG/ITO (I/M/I) multilayer films replace a single ITO film, in an attempt to obtain better conductivity and lower cost. However, the photoelectric properties of such a sandwich structure do not meet the expectations of people. One topic group of shanghai transportation later proposed a dielectric layer/metal layer/dielectric layer sandwich structure with good conductivity and low resistance. However, the film with the structure still has a thicker thickness, is easy to fall off on a flexible base material PET, has poor adhesion, is exposed in air, has unstable tissue, poor oxidation resistance and poor weather resistance test for 500h, and has poor data.
For example, taking the conductive film having a sheet resistance of about 15 ohms manufactured by ITO which is currently developed in the industry as an example, the thickness of ITO is about 130nm or more, and the flexibility is deteriorated due to the thickness, so that the flexible substrate cannot be used basically.
For example, taking the conductive film having a sheet resistance of about 15 ohms manufactured by ITO which is currently developed in the industry as an example, the thickness of ITO is about 130nm or more, and the flexibility is deteriorated due to the thickness, so that the flexible substrate cannot be used basically. The silver laminated conductive film successfully solves the problem and has a reduction in cost. The disadvantage is that the silver laminated conductive film is slightly inferior to ITO in weather resistance and transmittance.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the purpose is: the low-sheet resistance transparent conductive film with better weather resistance and transmittance is provided to make up for the defects of the prior art.
The technical scheme of the utility model is realized like this:
the utility model discloses a low sheet resistance transparent conductive film, which comprises a transparent substrate, a refractive index matching layer, a transition layer, a metal alloy layer and a transparent conductive layer which are stacked from bottom to top,
wherein the refractive index matching layer is a zinc sulfide layer, a niobium pentoxide layer, a titanium dioxide layer, a zinc oxide layer or a zinc oxide mixed layer, the thickness is 15-50 nm,
the transition layer is a zinc magnesium oxide layer, a zinc gallium oxide layer or a zinc aluminum oxide layer, and the thickness is 3-15 nm.
In certain embodiments, the index matching layer is a niobium pentoxide layer having a thickness of 35 nm.
In certain embodiments, the transition layer is a zinc magnesium oxide layer having a thickness of 6 nm.
In some embodiments, the transparent substrate layer is made of one of PI, PET, PC, COP and glass, has a thickness of 0.005 to 1 μm, and has upper and lower surfaces hardened when the material is PET or PC.
In certain embodiments, the material of the transparent substrate layer is PET and has a thickness of 0.125 μm.
In some embodiments, the metal alloy layer is a silver alloy layer or a copper alloy layer, has a thickness of 4 to 20nm, and has a sheet resistance of 5 to 30 Ω.
In some embodiments, the metal alloy layer is a silver palladium copper alloy layer with a thickness of 6.5nm and a sheet resistance of 16 Ω.
In some embodiments, the transparent conductive layer is a tin oxide layer or an indium tin oxide layer with a thickness of 20 to 80 nm.
In some embodiments, the transparent conductive layer is an indium tin oxide layer having a thickness of 52 nm.
In certain embodiments, the transition layer has a proportion of zinc oxide in the mixed material of greater than 80%.
The utility model has the advantages that:
the utility model provides a transparent conducting film is hindered to low side has increased the water oxygen barrier layer of the substrate side of being composed jointly by refracting index matching layer and transition layer two between transparent substrate and metal alloy layer, wherein the purpose of transition layer provides a fine and close continuous conducting layer substrate for the metal alloy layer on upper strata, reduce the island discontinuous phenomenon of thin layer metal, its refracting index matching layer of making with the high refractive index material is composed jointly behind the water oxygen barrier layer of substrate side, prevent effectively that metal alloy layer from degrading in the use, make whole conducting film reliability weatherability improve by a wide margin.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Detailed Description
Example (b): the laminated structure of the low sheet resistance transparent conductive film is shown in fig. 1, and the transparent conductive film comprises a transparent substrate 10, a refractive index matching layer 11, a transition layer 12, a metal alloy layer 13 and a transparent conductive layer 14 which are laminated from bottom to top, and various different embodiments can be formed by selecting different materials, composition contents or thicknesses of the layers. We now describe our products and their properties by way of six examples:
example 1
A low-sheet-resistance transparent conductive film is composed of a transparent base material 10, a refractive index matching layer 11, a transition layer 12, a metal alloy layer 13 and a transparent conductive layer 14 which are stacked from bottom to top, wherein the materials of the layers are respectively PET, niobium pentoxide, zinc magnesium oxide, silver alloy (the rest alloy in the silver alloy is palladium and copper, the proportion of silver is more than 95%, the sheet resistance is 16 omega) and indium tin oxide (the indium tin ratio is 90:10), and the thicknesses of the layers are respectively 0.125 mu m, 35nm, 6nm, 6.5nm and 52 nm. The transparent conductive film has better properties (including weather resistance, transparency, adhesion, etc.).
The manufacturing process can adopt a conventional roll-to-roll magnetron sputtering deposition method, and the roll-to-roll magnetron sputtering deposition method has the advantages of sputtering various materials, high vacuum degree, strong adhesive force, compact film material and capability of coating on a flexible substrate.
As in the present embodiment, the material is deposited on the flexible transparent substrate by a magnetron sputtering process sequentially through a niobium pentoxide target, a zinc magnesium oxide target, a silver-palladium-copper alloy target, and an indium tin oxide target.
When the material is PET or PC, the upper and lower surfaces are hardened by applying a coating process, such as HC hardening, which is a conventional technique and will not be described herein.
Of course, the transparent conductive film may also be formed by other processes, such as chemical vapor deposition or physical vapor deposition, and the process and process parameters thereof may refer to the prior art and are not described herein again.
Tables 1 and 2 show the results of the tests on the product of example 1
TABLE 1
| Square resistance omega | VLT(％) | Adhesion force |
| 16Ω | 85％ | 5B |
Weather resistance test conditions: high temperature and humidity 85 deg.C, 85% RH, high temperature storage 80 deg.C, low temperature storage-40 deg.C, cold and heat shock-40 deg.C (60min) to 80 deg.C (60min),20cycles, the results are shown in Table 2
TABLE 2
Example 2
A low-sheet-resistance transparent conductive film is composed of a transparent base 10, a refractive index matching layer 11, a transition layer 12, a metal alloy layer 13 and a transparent conductive layer 14 which are stacked from bottom to top, wherein the materials of each layer are respectively PC, zinc sulfide, zinc gallium oxide, copper alloy (wherein the rest alloy in the copper alloy is palladium and gold, the proportion of copper is more than 95%, the sheet resistance is 18 omega) and tin oxide, and the thicknesses of each layer are respectively 0.100 mu m, 40nm, 7nm, 5.5nm and 55 nm.
Tables 3 and 4 show the results of the tests on the product of example 2
TABLE 3
| Square resistance omega | VLT(％) | Adhesion force |
| 18Ω | 84％ | 5B |
Weather resistance test conditions: high temperature and humidity 85 deg.C, 85% RH, high temperature storage 80 deg.C, low temperature storage-40 deg.C, cold and heat shock-40 deg.C (60min) to 80 deg.C (60min),20cycles, the results are shown in Table 4
TABLE 4
Example 3
A low-sheet-resistance transparent conductive film is composed of a transparent base material 10, a refractive index matching layer 11, a transition layer 12, a metal alloy layer 13 and a transparent conductive layer 14 which are stacked from bottom to top, wherein the materials of the layers are PI, titanium dioxide, zinc aluminum oxide, silver alloy (the rest alloy in the silver alloy is platinum and rhodium, the proportion of silver is more than 95 percent, the sheet resistance is 12 omega) and indium tin oxide (the indium tin ratio is 90:10), and the thicknesses of the layers are 0.150 mu m, 30nm, 5nm, 7nm and 60nm respectively.
Tables 5 and 6 show the results of the tests on the product of example 3
TABLE 5
| Square resistance omega | VLT(％) | Adhesion force |
| 16.6Ω | 82％ | 5B |
Weather resistance test conditions: high temperature and humidity 85 deg.C, 85% RH, high temperature storage 80 deg.C, low temperature storage-40 deg.C, cold and heat shock-40 deg.C (60min) to 80 deg.C (60min),20cycles, the results are shown in Table 6
TABLE 6
Example 4
A low sheet resistance transparent conductive film is composed of a transparent substrate 10, a refractive index matching layer 11, a transition layer 12, a metal alloy layer 13 and a transparent conductive layer 14 which are stacked from bottom to top, wherein the materials of each layer are respectively COP, zinc oxide, zinc aluminum oxide, copper alloy (wherein the rest alloy in the copper alloy is palladium and platinum, the proportion of copper is more than 95%, the sheet resistance is 17 omega) and tin oxide, and the thicknesses of each layer are respectively 0.120 mu m, 40nm, 5nm, 6nm and 45 nm.
Tables 7 and 8 show the results of the tests on the product of example 4
TABLE 7
| Square resistance omega | VLT(％) | Adhesion force |
| 17Ω | 81％ | 5B |
Weather resistance test conditions: high temperature and humidity 85 deg.C, 85% RH, high temperature storage 80 deg.C, low temperature storage-40 deg.C, cold and heat shock-40 deg.C (60min) to 80 deg.C (60min),20cycles, the results are shown in Table 8
TABLE 8
Example 5
A low-sheet-resistance transparent conductive film is composed of a transparent base material 10, a refractive index matching layer 11, a transition layer 12, a metal alloy layer 13 and a transparent conductive layer 14 which are stacked from bottom to top, wherein the materials of the layers are respectively glass, zinc oxide, zinc magnesium oxide, silver alloy (the rest alloy in the copper alloy is gold and platinum, the proportion of copper is more than 95 percent, the sheet resistance is 12 omega) and indium tin oxide (the indium tin ratio is 90:10), and the thicknesses of the layers are respectively 0.085 mu m, 45nm, 10nm, 7nm and 60 nm.
Tables 9 and 10 show the results of the tests on the product of example 5
TABLE 9
| Square resistance omega | VLT(％) | Adhesion force |
| 12Ω | 81％ | 5B |
Weather resistance test conditions: high temperature and humidity 85 deg.C, 85% RH, high temperature storage 80 deg.C, low temperature storage-40 deg.C, cold and heat shock-40 deg.C (60min) to 80 deg.C (60min),20cycles, the results are shown in Table 10
Example 6
A low-sheet-resistance transparent conductive film is composed of a transparent base material 10, a refractive index matching layer 11, a transition layer 12, a metal alloy layer 13 and a transparent conductive layer 14 which are stacked from bottom to top, wherein the materials of the layers are respectively PET, titanium dioxide, zinc gallium oxide, copper alloy (the rest alloy in the copper alloy is gold and rhodium, the proportion of copper is more than 95 percent, the sheet resistance is 10 omega) and indium tin oxide (the indium tin ratio is 90:10), and the thicknesses of the layers are respectively 0.135 mu m, 30nm, 9nm, 11nm and 54 nm.
Tables 11 and 12 show the results of the tests on the product of example 6
TABLE 11
| Square resistance omega | VLT(％) | Adhesion force |
| 10Ω | 82％ | 5B |
Weather resistance test conditions: high temperature and humidity 85 deg.C, 85% RH, high temperature storage 80 deg.C, low temperature storage-40 deg.C, cold and heat shock-40 deg.C (60min) to 80 deg.C (60min),20cycles, the results are shown in Table 12
TABLE 12
The above-mentioned embodiments are only for illustrating the technical concept and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention, which should not be construed as limiting the scope of the present invention. All modifications made according to the spirit of the main technical scheme of the present invention shall be covered within the protection scope of the present invention.
Claims (9)
1. A low sheet resistance transparent conductive film is characterized in that: comprises a transparent substrate, a refractive index matching layer, a transition layer, a metal alloy layer and a transparent conducting layer which are stacked from bottom to top,
wherein the refractive index matching layer is a zinc sulfide layer, a niobium pentoxide layer, a titanium dioxide layer, a zinc oxide layer or a zinc oxide mixed layer, the thickness is 15-50 nm,
the transition layer is a zinc magnesium oxide layer, a zinc gallium oxide layer or a zinc aluminum oxide layer, and the thickness is 3-15 nm.
2. The transparent conductive film of claim 1, wherein: the refractive index matching layer is a niobium pentoxide layer and has a thickness of 35 nm.
3. The transparent conductive film of claim 1, wherein: the transition layer is a zinc magnesium oxide layer and is 6nm thick.
4. The transparent conductive film of claim 1, wherein: the transparent substrate layer is made of one of PI, PET, PC, COP and glass, the thickness of the transparent substrate layer is 0.005-1 mu m, and when the transparent substrate layer is made of PET or PC, the upper surface and the lower surface of the transparent substrate layer are hardened.
5. The transparent conductive film with low sheet resistance according to claim 4, wherein: the transparent substrate layer is made of PET and has a thickness of 0.125 μm.
6. The transparent conductive film of claim 1, wherein: the metal alloy layer is a silver alloy layer or a copper alloy layer, the thickness is 4-20 nm, and the sheet resistance is 5-30 omega.
7. The transparent conductive film with low sheet resistance according to claim 6, wherein: the metal alloy layer is a silver-palladium-copper alloy layer, the thickness of the metal alloy layer is 6.5nm, and the sheet resistance of the metal alloy layer is 16 omega.
8. The transparent conductive film of claim 1, wherein: the transparent conducting layer is a tin oxide layer or an indium tin oxide layer, and the thickness of the transparent conducting layer is 20-80 nm.
9. The transparent conductive film of claim 8, wherein: the transparent conducting layer is an indium tin oxide layer, and the thickness is 52 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021830250.5U CN212392011U (en) | 2020-08-27 | 2020-08-27 | Low-sheet-resistance transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021830250.5U CN212392011U (en) | 2020-08-27 | 2020-08-27 | Low-sheet-resistance transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212392011U true CN212392011U (en) | 2021-01-22 |
Family
ID=74253832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021830250.5U Active CN212392011U (en) | 2020-08-27 | 2020-08-27 | Low-sheet-resistance transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212392011U (en) |
-
2020
- 2020-08-27 CN CN202021830250.5U patent/CN212392011U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4961786B2 (en) | Transparent conductive film and transparent conductive film using the same | |
| CN105144045A (en) | Conductive structure and preparation method therefor | |
| KR101671169B1 (en) | Metal mesh type touch screen panel and method of manufacturing the same | |
| CN107850959B (en) | Conductive structure, manufacturing method thereof, touch panel comprising conductive structure and display device comprising conductive structure | |
| CN109243678A (en) | A kind of composite transparent conductive film | |
| CN111916252A (en) | Transparent conductive film with low sheet resistance | |
| CN212392011U (en) | Low-sheet-resistance transparent conductive film | |
| CN212392012U (en) | Low sheet resistance transparent conductive film | |
| CN212392013U (en) | Transparent conductive film with low sheet resistance | |
| CN111883284A (en) | Double-sided conductive film, film coating method and touch screen | |
| JP4406237B2 (en) | A method for producing a transparent substrate with a multilayer film having conductivity. | |
| CN111883287A (en) | Low-sheet-resistance transparent conductive film | |
| CN106328252A (en) | Silver nanowire conducting transparent film and manufacture method thereof | |
| CN111916251A (en) | Low sheet resistance transparent conductive film | |
| CN206270923U (en) | A kind of double-sided conductive film and touch screen | |
| KR102032011B1 (en) | Conductive laminate and transparent electrode comprising thereof | |
| CN110648783A (en) | ITO thin film and transparent conductive thin film | |
| CN107993746A (en) | A kind of nesa coating and the electronic device based on it | |
| CN111933330A (en) | High bending resistance ITO transparent conducting film | |
| CN111916250A (en) | ITO transparent conductive film with high bending resistance | |
| CN112992408A (en) | Flexible composite transparent conductive film and preparation method and device thereof | |
| KR102020990B1 (en) | Transparent electrode film for smart window, Manufacturing method thereof and PDLC smart window containing the same | |
| EP3272520B1 (en) | Conductive structure and electronic device comprising same | |
| CN206271441U (en) | A kind of nano-silver thread transparent conductive film | |
| CN212570429U (en) | ITO transparent conductive film with high bending resistance |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |