CN114725237B - Ultraviolet detector preparation method and ultraviolet detector - Google Patents
Ultraviolet detector preparation method and ultraviolet detector Download PDFInfo
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- CN114725237B CN114725237B CN202210230167.1A CN202210230167A CN114725237B CN 114725237 B CN114725237 B CN 114725237B CN 202210230167 A CN202210230167 A CN 202210230167A CN 114725237 B CN114725237 B CN 114725237B
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- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
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Abstract
The invention discloses a preparation method of an ultraviolet detector and the ultraviolet detector, wherein the preparation method comprises the steps of sequentially growing a nucleation layer, a buffer layer, a sacrificial layer and a target layer on a preset substrate; photoetching the target layer by using a spin-coating photoetching technology to obtain a photosensitive array; and (3) in-situ bonding is carried out on the photosensitive array and the back electrode, and electrochemical corrosion is carried out on the sacrificial layer to prepare the target ultraviolet detector. According to the embodiment of the invention, the in-situ bonding and the electrochemical stripping technology are combined, so that the nitride epitaxial array structure is stripped in a large area from the preset substrate, the cost and difficulty of the integration of the area array detection chip are reduced, and the method can be widely applied to the technical field of microelectronics.
Description
Technical Field
The invention relates to the technical field of microelectronics, in particular to a preparation method of an ultraviolet detector and the ultraviolet detector.
Background
The III-V nitride material has outstanding advantages as a representative of the third generation semiconductor material: large forbidden bandwidth, high temperature resistance, radiation resistance, stable physical and chemical properties, etc. Compared with a silicon-based ultraviolet detector, the III-V nitride ultraviolet detector does not need an additional optical filter, and meanwhile, under the vacuum ultraviolet condition, the III-V nitride has stronger radiation resistance, so that the III-V nitride ultraviolet detector is an excellent material for preparing the high-performance ultraviolet detector. At present, an ultraviolet detector of III-V nitride is usually a single device, has single performance, and a large area of a chip is covered by an electrode, so that the light absorption efficiency of the chip is reduced. Meanwhile, the cost of integrating the multi-pixel array of the high-resolution area array imaging is high, and the difficulty is high.
Disclosure of Invention
In view of the above, the embodiment of the invention provides a preparation method of an ultraviolet detector and the ultraviolet detector, so as to reduce the cost and difficulty of the integration of an area array detection chip.
In one aspect, the invention provides a method for preparing an ultraviolet detector, comprising the following steps:
sequentially growing a nucleation layer, a buffer layer, a sacrificial layer and a target layer on a preset substrate;
photoetching the target layer by using a spin-coating photoetching technology to obtain a photosensitive array;
and (3) in-situ bonding is carried out on the photosensitive array and the back electrode, and electrochemical corrosion is carried out on the sacrificial layer to prepare the target ultraviolet detector.
Optionally, the nucleation layer, the buffer layer, the sacrificial layer and the target layer are sequentially grown on a preset substrate, wherein the growth comprises at least one of metal organic vapor phase epitaxy, molecular beam epitaxy, physical vapor phase epitaxy and ion beam epitaxy.
Optionally, the photoetching is performed on the target layer by a spin-coating photoetching technology to obtain a photosensitive array, which comprises the following steps:
spin coating a photoresist layer on the surface of the target layer;
and photoetching the photoresist layer to prepare a photosensitive array.
Optionally, the photoetching is performed on the photoresist layer, wherein the photoetching comprises at least one of non-contact photoetching, stepping photoetching, electron beam photoetching and immersion photoetching.
Optionally, the in-situ bonding of the photosensitive array and the back electrode is performed, wherein the in-situ bonding includes at least one of Gao Wenjian bonding, pressure bonding, and thermocompression bonding.
Optionally, the photoetching is performed on the photoresist layer to prepare a photosensitive array, which includes:
photoetching the photoresist layer by adopting a strip mask plate to obtain a photoetching sample;
and etching the photoetching sample by using an inductive coupling etching machine to prepare a photosensitive array.
On the other hand, the embodiment of the invention also discloses an ultraviolet detector, which is prepared by the preparation method of any one of the ultraviolet detectors, and comprises the following steps: a photosensitive array and a back electrode, wherein the photosensitive array is bonded in situ with the back electrode.
Optionally, the back electrode comprises a plurality of metal electrodes and a transfer substrate, the metal electrodes being deposited onto the transfer substrate by electrode preparation techniques.
Optionally, the metal electrode is any one of indium, silver, gold, copper, chromium, and a gold-tin alloy.
Optionally, the adjacent two metal electrodes and the photosensitive array between the adjacent metal electrodes form a detection unit, and the detection unit is an ultraviolet detection photosensitive pixel.
Compared with the prior art, the technical scheme provided by the invention has the following technical effects: the embodiment of the invention prepares a photosensitive array by a spin coating lithography technology, and obtains a target ultraviolet detector by in-situ bonding of the photosensitive array and a back electrode and combining an electrochemical corrosion method; through combining in-situ bonding and electrochemical stripping technology, the nitride epitaxial array structure is stripped in a large area from the preset substrate, and meanwhile, the back electrode plays a role in bonding adhesion, can be used as the back electrode to effectively collect photo-generated carriers, and can reduce the cost and difficulty of area array detection chip integration.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method for manufacturing an ultraviolet detector according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an epitaxial structure after epitaxial growth in an embodiment of the present invention;
FIG. 3 is a schematic view of a back electrode structure according to an embodiment of the present invention;
FIG. 4 is a schematic illustration of in-situ bonding of a photosensitive array and a backside electrode according to an embodiment of the present invention;
fig. 5 is a schematic view of an ultraviolet detector according to an embodiment of the present invention.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
The existing detection device is usually that a photosensitive area is arranged at the lower part of an electrode, and the large area of a chip of the photoelectric detection chip with the structure is covered by the electrode, so that the light absorption efficiency of the chip is reduced. Meanwhile, most of the current ultraviolet detectors are single devices with only one pixel point, so that the cost of integrating the single devices to form a multi-pixel array for high-resolution area array imaging is high, and meanwhile, the difficulty is high. The embodiment of the invention adopts the mode of preparing the back electrode to prepare the ultraviolet detector, so that the area at the lower part of the electrode originally becomes a newly added photosensitive area, the light absorption efficiency of the chip is improved, and the performance of the chip is further improved. Meanwhile, the problem of device integration is solved by an in-situ bonding mode, and the area array detector can be directly integrated on the transfer substrate by in-situ bonding, so that the cost and the difficulty of integration are reduced.
Referring to fig. 1, an embodiment of the present invention provides a method for manufacturing an ultraviolet detector, including:
S101, sequentially growing a nucleation layer, a buffer layer, a sacrificial layer and a target layer on a preset substrate;
S102, photoetching the target layer by a spin-coating photoetching technology to obtain a photosensitive array;
S103, in-situ bonding is carried out on the photosensitive array and the back electrode, and electrochemical corrosion is carried out on the sacrificial layer, so that the target ultraviolet detector is prepared.
Further as a preferred embodiment, in the step S101, a nucleation layer, a buffer layer, a sacrificial layer and a target layer are sequentially grown on a preset substrate, where the growth includes at least one of metal organic vapor phase epitaxy, molecular beam epitaxy, physical vapor phase epitaxy and ion beam epitaxy.
Referring to fig. 2, a nucleation layer 4, a buffer layer 3, a sacrificial layer 2, and a target layer 1 are sequentially grown on a preset substrate 5. The preset substrate 5 may be a silicon substrate, a sapphire substrate or a gallium nitride substrate grown as a material, and an epitaxial film is grown on the preset substrate by at least one of metal organic vapor phase epitaxy, molecular beam epitaxy, physical vapor phase epitaxy and ion beam epitaxy, wherein the nucleation layer is undoped GaN, the buffer layer is low doped GaN, the sacrificial layer is heavily doped GaN, and the target layer is a nitride epitaxial film. The doping concentration of the buffer layer is 1.0X10 18cm-3 to 8.0X10 18cm-3, the doping element is Si, the doping concentration of the sacrificial layer is 1.0X10 19cm-3 to 2.0X10 19cm-3, and the doping element is Si. The thickness of the nucleation layer is 300nm to 1.5 mu m, the thickness of the buffer layer is 300nm to 3 mu m, the thickness of the sacrificial layer is 0.5 mu m to 1.5 mu m, and the structure of the target layer is an ultraviolet detection structure.
Further as a preferred embodiment, in the step S102, the step of performing photolithography on the target layer by using spin-coating photolithography technology to obtain a photosensitive array includes:
spin coating a photoresist layer on the surface of the target layer;
and photoetching the photoresist layer to prepare a photosensitive array.
Further as a preferred embodiment, the photolithography is performed on the photoresist layer, wherein the photolithography includes at least one of non-contact photolithography, step photolithography, electron beam lithography, and immersion lithography.
Further as a preferred embodiment, in the step S103, the bonding the photosensitive array and the back electrode in situ, where the in situ bonding includes at least one of Gao Wenjian bonding, pressure bonding, and thermocompression bonding.
Further as a preferred embodiment, the photoetching is performed on the photoresist layer to prepare a photosensitive array, which includes:
photoetching the photoresist layer by adopting a strip mask plate to obtain a photoetching sample;
and etching the photoetching sample by using an inductive coupling etching machine to prepare a photosensitive array.
On the other hand, the embodiment of the invention also discloses an ultraviolet detector, which is prepared by the preparation method of any one of the ultraviolet detectors, and comprises the following steps: a photosensitive array and a back electrode, wherein the photosensitive array is bonded in situ with the back electrode.
Further as a preferred embodiment, the back electrode comprises a plurality of metal electrodes and a transfer substrate, the metal electrodes being deposited onto the transfer substrate by electrode preparation techniques.
Further as a preferred embodiment, the metal electrode is any one of indium, silver, gold, copper, chromium, and a gold-tin alloy.
Further as a preferred embodiment, the adjacent two metal electrodes and the photosensitive array between the adjacent metal electrodes form a detection unit, and the detection unit is an ultraviolet detection photosensitive pixel.
In one embodiment of the invention, the pre-set substrate is a sapphire substrate, and the sapphire substrate is cleaned and dried according to well-established semiconductor standard cleaning processes. In the embodiment, the cleaned sapphire substrate is placed in a reaction chamber of a metal organic chemical vapor deposition system, and a nucleation layer, a buffer layer, a sacrificial layer and a target layer are epitaxially grown on the surface of the preset substrate at one time. In the growth process of gallium nitride, the nucleation layer is used for providing a crystal nucleus for growth of upper gallium nitride, the buffer layer is used for relieving lattice mismatch of the nucleation layer and the upper sacrificial layer, the buffer layer is needed for realizing the buffer effect because of the larger doping concentration of the sacrificial layer, the sacrificial layer is a part which is sacrificed in the electrochemical corrosion process, and the sacrificial layer is corroded to obtain an upper target layer. The target layer is a nitride epitaxial layer for fabricating a photosensitive array. In this embodiment, the thickness of the nucleation layer is 1 μm, the thickness of the buffer layer is 500nm, the doping concentration of the buffer layer is 5.0X10 18cm-3, the thickness of the sacrificial layer is 1.5 μm, the doping concentration is 1.0X10 19cm-3, the doping elements are Si, the structure of the target layer is 300nm, and the doping concentration is 1.0X10 18cm-3 N-type gallium nitride. And then spin-coating a photoresist layer on the surface of the epitaxially grown substrate, and curing the photoresist layer at 105 ℃ for 1 minute. In the embodiment, the strip mask is adopted to carry out photoetching on the photoresist layer after curing, so as to obtain a photoetching sample. And then etching the photoetching sample by using an inductively coupled etching machine (ICP), wherein the etching depth is 700nm, and preparing a photosensitive area of the array to obtain a photosensitive array. And removing photoresist on the surface of the photosensitive array by using acetone after etching is finished, and cleaning the photoetching sample for standby by adopting a standard semiconductor cleaning process.
Referring to fig. 3, in this example, a silicon substrate was used as the transfer substrate 6, and an In metal electrode 7 having a thickness of 1 μm was deposited on the silicon substrate by thermal vapor deposition, the size of the metal electrode was 200 μm×200 μm, and the distance between the two metal electrodes was 50 μm. Referring to fig. 4, the back electrode coated with the metal electrode 7 on the transfer substrate 6 is bonded to the cleaned photosensitive array 8, and is placed in a heating device to be heated by thermocompression bonding at 80 ℃ for 30 minutes, so that the back electrode is tightly bonded to the photosensitive array. Referring to fig. 5, the bonded sample is etched by electrochemical etching, the electrolyte is 0.3M oxalic acid, the etching voltage is 13V, the etching time is 1h, and after the etching is completed, the target ultraviolet detector is obtained, which comprises a transfer substrate 6, a metal electrode 7 and a photosensitive array 8, and the photosensitive arrays 8 between two adjacent metal electrodes 7 and adjacent metal electrodes together form a detection unit as an ultraviolet detection photosensitive pixel point. In addition, the metal electrode in this embodiment may be any one of metal In, ag, au, cu, cr and au—sn alloy, the back electrode is prepared by any one of photolithography electrode and evaporation electrode, the transfer substrate is any one of silicon wafer, sapphire, silicon carbide, and PET flexible substrate, and the electrochemical etching solution is any one of oxalic acid, hydrofluoric acid, hydrochloric acid, sodium hydroxide, and potassium hydroxide. In the embodiment, the photosensitive array is prepared by a spin-coating lithography technology, and a method of combining back electrode hot-pressing bonding with electrochemical corrosion is adopted to obtain the large-area back electrode array ultraviolet detector. The method not only improves the ultraviolet absorption efficiency of the wafer chip and improves the performance of the preparation detector, but also reduces the cost and difficulty of the integration of the area array detection chip by the in-situ bonding array transfer without changing the relative position of the photosensitive array.
In summary, the embodiment of the invention has the following advantages:
This example was prepared by in situ transfer of a III-V nitride large area array structure and a high resolution area array imaging uv detector. The in-situ bonding technology and the electrochemical corrosion technology are combined, so that the nitride epitaxial structure nanowire can be bonded on the transfer substrate in situ, the difficulty and cost of the integration of the photosensitive pixel device are reduced, and meanwhile, the design of the bottom electrode of the prepared area array detector enables more photosensitive areas on the upper part of the photosensitive chip to be exposed, and the ultraviolet absorptivity is improved. The preparation method effectively reduces the cost of nitride transfer bonding, can transfer the bonding of the nitride epitaxial structure, and provides a method for preparing a large-area high-resolution ultraviolet detector. The method is simple to operate, high in repeatability and wide in application prospect in the aspect of development of nitride photoelectric devices.
In some alternative embodiments, the functions/acts noted in the block diagrams may occur out of the order noted in the operational illustrations. For example, two blocks shown in succession may in fact be executed substantially concurrently or the blocks may sometimes be executed in the reverse order, depending upon the functionality/acts involved. Furthermore, the embodiments presented and described in the flowcharts of the present invention are provided by way of example in order to provide a more thorough understanding of the technology. The disclosed methods are not limited to the operations and logic flows presented herein. Alternative embodiments are contemplated in which the order of various operations is changed, and in which sub-operations described as part of a larger operation are performed independently.
Furthermore, while the invention is described in the context of functional modules, it should be appreciated that, unless otherwise indicated, one or more of the described functions and/or features may be integrated in a single physical device and/or software module or one or more functions and/or features may be implemented in separate physical devices or software modules. It will also be appreciated that a detailed discussion of the actual implementation of each module is not necessary to an understanding of the present invention. Rather, the actual implementation of the various functional modules in the apparatus disclosed herein will be apparent to those skilled in the art from consideration of their attributes, functions and internal relationships. Accordingly, one of ordinary skill in the art can implement the invention as set forth in the claims without undue experimentation. It is also to be understood that the specific concepts disclosed are merely illustrative and are not intended to be limiting upon the scope of the invention, which is to be defined in the appended claims and their full scope of equivalents.
The functions, if implemented in the form of software functional units and sold or used as a stand-alone product, may be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art or in a part of the technical solution, in the form of a software product stored in a storage medium, comprising several instructions for causing a computer device (which may be a personal computer, a server, a network device, etc.) to perform all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a usb disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
Logic and/or steps represented in the flowcharts or otherwise described herein, e.g., a ordered listing of executable instructions for implementing logical functions, can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions. For the purposes of this description, a "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device.
More specific examples (a non-exhaustive list) of the computer-readable medium would include the following: an electrical connection (electronic device) having one or more wires, a portable computer diskette (magnetic device), a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). In addition, the computer readable medium may even be paper or other suitable medium on which the program is printed, as the program may be electronically captured, via, for instance, optical scanning of the paper or other medium, then compiled, interpreted or otherwise processed in a suitable manner, if necessary, and then stored in a computer memory.
It is to be understood that portions of the present invention may be implemented in hardware, software, firmware, or a combination thereof. In the above-described embodiments, the various steps or methods may be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, may be implemented using any one or combination of the following techniques, as is well known in the art: discrete logic circuits having logic gates for implementing logic functions on data signals, application specific integrated circuits having suitable combinational logic gates, programmable Gate Arrays (PGAs), field Programmable Gate Arrays (FPGAs), and the like.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
While the preferred embodiment of the present application has been described in detail, the present application is not limited to the embodiments described above, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present application, and these equivalent modifications or substitutions are included in the scope of the present application as defined in the appended claims.
Claims (10)
1. A method for manufacturing an ultraviolet detector, comprising:
Sequentially growing a nucleation layer, a buffer layer, a sacrificial layer and a target layer on a preset substrate; the nucleation layer is undoped gallium nitride, the buffer layer is low-doped gallium nitride, the sacrificial layer is heavily doped gallium nitride, and the target layer is a nitride epitaxial film; the doping concentration of the buffer layer is 1.0 multiplied by 10 18cm-3 to 8.0 multiplied by 10 18cm-3, the doping element is silicon, the doping concentration of the sacrificial layer is 1.0 multiplied by 10 19cm-3 to 2.0 multiplied by 10 19cm-3, and the doping element is silicon;
photoetching the target layer by using a spin-coating photoetching technology to obtain a photosensitive array; the photosensitive array is a nitride epitaxial array structure adopting a microwire material;
And performing in-situ bonding on the photosensitive array and the back electrode, and performing electrochemical corrosion on the sacrificial layer, so that the nitride epitaxial array structure is peeled off in a large area from a preset substrate by combining in-situ bonding and electrochemical peeling technology, and the target ultraviolet detector is prepared.
2. The method of claim 1, wherein the growing comprises at least one of metal organic vapor phase epitaxy, molecular beam epitaxy, physical vapor phase epitaxy, and ion beam epitaxy.
3. The method for preparing an ultraviolet detector according to claim 1, wherein the step of performing photolithography on the target layer by spin-coating photolithography to obtain a photosensitive array comprises:
spin coating a photoresist layer on the surface of the target layer;
and photoetching the photoresist layer to prepare a photosensitive array.
4. A method of fabricating an ultraviolet detector according to claim 3, wherein the photoresist layer is subjected to lithography, wherein lithography comprises at least one of non-contact lithography, stepper lithography, electron beam lithography, and immersion lithography.
5. The method of claim 1, wherein the bonding the photosensitive array to the back electrode in situ comprises at least one of Gao Wenjian bonding, pressure bonding, and thermocompression bonding.
6. A method for preparing an ultraviolet detector according to claim 3, wherein the photoetching is performed on the photoresist layer to prepare a photosensitive array, and the method comprises the following steps:
photoetching the photoresist layer by adopting a strip mask plate to obtain a photoetching sample;
and etching the photoetching sample by using an inductive coupling etching machine to prepare a photosensitive array.
7. An ultraviolet detector prepared by the method for preparing an ultraviolet detector according to any one of claims 1 to 6, comprising: the device comprises a photosensitive array and a back electrode, wherein the photosensitive array is bonded with the back electrode in situ.
8. An ultraviolet detector according to claim 7, wherein the back electrode comprises a plurality of metal electrodes and a transfer substrate, the metal electrodes being deposited onto the transfer substrate by electrode preparation techniques.
9. The ultraviolet detector of claim 8, wherein the metal electrode is any one of indium, silver, gold, copper, chromium, and a gold-tin alloy.
10. An ultraviolet detector according to claim 8, wherein the adjacent two metal electrodes and the photosensitive array between the adjacent metal electrodes form a detection unit, and the detection unit is an ultraviolet detection photosensitive pixel.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7033961B1 (en) * | 2003-07-15 | 2006-04-25 | Rf Micro Devices, Inc. | Epitaxy/substrate release layer |
| KR20070087770A (en) * | 2005-11-14 | 2007-08-29 | 삼성전자주식회사 | High-brightness nitride-based light emitting devices with large area and capability using aluminum nitride (aln)-based supporting substrate layers |
| CN104659155A (en) * | 2015-03-03 | 2015-05-27 | 中国科学院半导体研究所 | Method for adhering thin film solar cell device to another substrate |
| CN108400183A (en) * | 2018-02-28 | 2018-08-14 | 华南理工大学 | AlGaN Base Metals-semiconductor-metal type ultraviolet detector and preparation method thereof on a kind of Si substrates |
| CN110085518A (en) * | 2019-05-06 | 2019-08-02 | 南京邮电大学 | A kind of preparation method for the transferable GaN film and its device that selective electrochemical method is removed |
-
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7033961B1 (en) * | 2003-07-15 | 2006-04-25 | Rf Micro Devices, Inc. | Epitaxy/substrate release layer |
| KR20070087770A (en) * | 2005-11-14 | 2007-08-29 | 삼성전자주식회사 | High-brightness nitride-based light emitting devices with large area and capability using aluminum nitride (aln)-based supporting substrate layers |
| CN104659155A (en) * | 2015-03-03 | 2015-05-27 | 中国科学院半导体研究所 | Method for adhering thin film solar cell device to another substrate |
| CN108400183A (en) * | 2018-02-28 | 2018-08-14 | 华南理工大学 | AlGaN Base Metals-semiconductor-metal type ultraviolet detector and preparation method thereof on a kind of Si substrates |
| CN110085518A (en) * | 2019-05-06 | 2019-08-02 | 南京邮电大学 | A kind of preparation method for the transferable GaN film and its device that selective electrochemical method is removed |
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