CN114649479A - Composite cathode electrode layer for positive organic solar cell and preparation method thereof - Google Patents

Composite cathode electrode layer for positive organic solar cell and preparation method thereof Download PDF

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CN114649479A
CN114649479A CN202210235990.1A CN202210235990A CN114649479A CN 114649479 A CN114649479 A CN 114649479A CN 202210235990 A CN202210235990 A CN 202210235990A CN 114649479 A CN114649479 A CN 114649479A
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杨曦
张曲
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Guangzhou Zhuoguang Technology Co ltd
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Abstract

本发明涉及一种用于正向有机太阳能电池的复合阴极电极层及其制备方法。复合阴极电极层是双层金属镱Yb和银Ag;Yb层一面为Ag层,另一面为正向有机太阳能电池的活性层。进一步的,Yb厚度是0.5nm‑20nm,并且Ag厚度是5nm‑500nm。Yb与Ag的双层电极,可降低其功函,与常用的有机活性层受体材料LUMO能级更匹配,使有机活性层与金属阴极之间形成欧姆接触,提高了有机太阳能电池的器件性能。制备复合阴极电极层的方法采取真空热蒸发镀膜法。本发明与现有技术相比,其显著优点是:不使用阴极界面层,减少制备步骤,降低产业化生产成本。

Figure 202210235990

The invention relates to a composite cathode electrode layer for a forward organic solar cell and a preparation method thereof. The composite cathode electrode layer is a double-layer metal ytterbium Yb and silver Ag; one side of the Yb layer is an Ag layer, and the other side is an active layer of a forward organic solar cell. Further, the thickness of Yb is 0.5nm-20nm, and the thickness of Ag is 5nm-500nm. The double-layer electrode of Yb and Ag can reduce its work function and match the LUMO energy level of the commonly used organic active layer acceptor material, so that ohmic contact is formed between the organic active layer and the metal cathode, and the device performance of organic solar cells is improved. . The method for preparing the composite cathode electrode layer adopts the vacuum thermal evaporation coating method. Compared with the prior art, the present invention has the significant advantages that the cathode interface layer is not used, the preparation steps are reduced, and the industrialized production cost is reduced.

Figure 202210235990

Description

一种用于正向有机太阳能电池的复合阴极电极层及其制备 方法A composite cathode electrode layer for forward organic solar cells and preparation method thereof

技术领域technical field

本发明涉及有机太阳能电池器件,特别是一种用于正向有机太阳能电池的复合阴极电极层及其制备方法。The invention relates to an organic solar cell device, in particular to a composite cathode electrode layer for a forward organic solar cell and a preparation method thereof.

背景技术Background technique

有机太阳能电池(Organic Solar Cells,OSC)由于其半透明、柔性可卷曲,轻质便于携带以及颜色和形状可设计性,已经被深入研究多年并开始尝试在市场中应用。太阳能电池工作原理是利用光伏器件把光能转换成电能,在转换过程中太阳光照射有机材料,其吸收光子,产生激子即电子空穴对,电子空穴对在内建电场的作用下发生分离且各自朝着相应的电极运动,最终被两侧的电极收集而产生电动势,若将两端接入外电路,该光生电动势就可形成电流,完成了由光到电的转化。OSC一般是三明治结构,包括了阴极、阳极以及夹在中间的有机光活性层。传统的OSC器件,即正向OSC阳极作用为收集空穴,阴极作用为收集电子。正向的OSC最为常用的阴极材料是银(Ag)、铝(Al)等,在活性层金属表面形成欧姆接触,来提高电子的收集效率。但这类金属阴极的功函数较高,约在-4.3eV。为了降低阴极功函,减小串联电阻和电荷复合损失,使活性层和电极之间形成良好的欧姆接触,需要在阴极和活性层中间插入一阴极界面层,有助于传输电子及阴极收集电子。Organic solar cells (Organic Solar Cells, OSC) have been intensively studied for many years and have begun to be applied in the market due to their translucency, flexibility and rollability, light weight and portability, as well as color and shape designability. The working principle of solar cells is to use photovoltaic devices to convert light energy into electrical energy. During the conversion process, sunlight irradiates organic materials, which absorb photons and generate excitons, that is, electron-hole pairs. Electron-hole pairs occur under the action of a built-in electric field. They are separated and move toward the corresponding electrodes respectively, and are finally collected by the electrodes on both sides to generate electromotive force. If the two ends are connected to an external circuit, the photo-generated electromotive force can form a current, completing the conversion from light to electricity. OSC is generally a sandwich structure, including a cathode, an anode and an organic photoactive layer sandwiched in the middle. In traditional OSC devices, the positive OSC anode functions to collect holes, and the cathode functions to collect electrons. The most commonly used cathode materials for positive OSCs are silver (Ag), aluminum (Al), etc., which form ohmic contacts on the metal surface of the active layer to improve electron collection efficiency. However, the work function of such metal cathodes is relatively high, about -4.3 eV. In order to reduce the cathode work function, reduce the series resistance and charge recombination loss, and form a good ohmic contact between the active layer and the electrode, it is necessary to insert a cathode interface layer between the cathode and the active layer, which is helpful for electron transport and cathode collection of electrons. .

常见的阴极界面材料主要包括可溶液制备的有机聚合物PFN(Adv.Mater.2011,23,4636-4643)及其衍生物PFN-Br但这些有机聚合物,存在着合成路线困难、生产成本高,并且在组件制备过程中,溶液涂布法材料利用率低,不利于有机太阳能电池产业化制备。Common cathode interface materials mainly include solution-preparable organic polymer PFN (Adv. Mater. 2011, 23, 4636-4643) and its derivative PFN-Br, but these organic polymers have difficult synthetic routes and high production costs. , and in the process of module preparation, the material utilization rate of the solution coating method is low, which is not conducive to the industrialized preparation of organic solar cells.

发明内容SUMMARY OF THE INVENTION

本发明的目的一种用于正向有机太阳能电池的复合阴极电极层及其制备方法。The object of the present invention is a composite cathode electrode layer for a forward organic solar cell and a preparation method thereof.

为实现本发明的目的,具体技术解决方案如下:For realizing the purpose of the present invention, concrete technical solutions are as follows:

一种用于正向有机太阳能电池的复合阴极电极层是双层金属镱Yb和银Ag;其中Yb层一面为Ag层,另一面为正向有机太阳能电池的活性层。A composite cathode electrode layer for a forward organic solar cell is a double-layer metal ytterbium Yb and silver Ag; one side of the Yb layer is an Ag layer, and the other side is an active layer of the forward organic solar cell.

进一步的,Yb厚度是0.5nm-20nm,并且Ag厚度是5nm-500nm。在更优选的方案中,Yb厚度是0.5nm-20nm,并且Ag厚度是5nm-500nm,Yb层的纯度≥99.9%。Further, the thickness of Yb is 0.5nm-20nm, and the thickness of Ag is 5nm-500nm. In a more preferred solution, the thickness of Yb is 0.5nm-20nm, and the thickness of Ag is 5nm-500nm, and the purity of the Yb layer is ≥99.9%.

一种制备复合阴极电极层的方法,所述复合阴极电极层制备采取真空热蒸发镀膜法。A method for preparing a composite cathode electrode layer, wherein the composite cathode electrode layer is prepared by a vacuum thermal evaporation coating method.

进一步的,所述真空热蒸发镀膜法的真空度是1×10-5~1×10-8Torr,Yb层的镀膜速率为

Figure BDA0003542200630000021
Ag层的镀膜速率为
Figure BDA0003542200630000022
优选的,真空度是5×10-6~1×10-7Torr,Yb层的镀膜速率为
Figure BDA0003542200630000023
Ag层的镀膜速率为
Figure BDA0003542200630000024
Further, the vacuum degree of the vacuum thermal evaporation coating method is 1×10 -5 to 1×10 -8 Torr, and the coating rate of the Yb layer is
Figure BDA0003542200630000021
The deposition rate of the Ag layer is
Figure BDA0003542200630000022
Preferably, the degree of vacuum is 5×10 -6 to 1×10 -7 Torr, and the coating rate of the Yb layer is
Figure BDA0003542200630000023
The deposition rate of the Ag layer is
Figure BDA0003542200630000024

本发明的原理是:以Yb和Ag双层金属作为正向OSC器件的阴极层,因Yb的功函在-2.4~-2.6eV,Ag功函为-4.26~-4.4eV,Yb与Ag的双层电极,可降低其功函,与常用的有机活性层受体材料LUMO能级(一般在-4.0~-4.3eV)更匹配。使有机活性层与金属阴极之间形成欧姆接触,提高了有机太阳能电池的器件性能。The principle of the invention is as follows: Yb and Ag double-layer metal is used as the cathode layer of the forward OSC device, because the work function of Yb is -2.4~-2.6eV, the work function of Ag is -4.26~-4.4eV, and the difference between Yb and Ag is The double-layer electrode can reduce its work function and better match the LUMO energy level (generally -4.0 to -4.3 eV) of the commonly used organic active layer acceptor material. The ohmic contact is formed between the organic active layer and the metal cathode, which improves the device performance of the organic solar cell.

本发明与现有技术相比,其显著优点是:Compared with the prior art, the present invention has the following significant advantages:

1、本发明所提供的复合阴极层优选真空热蒸发镀膜法,将金属Yb直接蒸镀于基片上,不使用阴极界面层,金属Yb无需合成,可以通过购买获得,减少了制备步骤,优化了器件的制备环节;1. The composite cathode layer provided by the present invention is preferably a vacuum thermal evaporation coating method, and the metal Yb is directly evaporated on the substrate without using a cathode interface layer, and the metal Yb does not need to be synthesized. device preparation;

2、本发明所提供的复合阴极层优选真空热蒸发镀膜法制备,是加热蒸发Yb和Ag使其气化并沉淀在活性层表面,所需的原材料较少,可以减少材料的使用过程中的浪费,降低生产成本,有利于有机太阳能电池产业化制备;2. The composite cathode layer provided by the present invention is preferably prepared by vacuum thermal evaporation coating method, which is to heat and evaporate Yb and Ag to make them vaporize and deposit on the surface of the active layer, which requires less raw materials and can reduce the use of materials. Waste, reduce production costs, and facilitate the industrialized preparation of organic solar cells;

3、本发明所提供复合阴极层应用于正向有机太阳能电池器件中,与加入阴极界面层(PFN-Br)的器件性能相比性能略优,能量转化率提高了2.8%,填充因子提高了2.5%。3. The composite cathode layer provided by the present invention is applied to the forward organic solar cell device, and the performance is slightly better than that of the device with the cathode interface layer (PFN-Br) added, the energy conversion rate is increased by 2.8%, and the filling factor is increased. 2.5%.

附图说明Description of drawings

图1是本发明的正向有机太阳能电池器件结构示意图;Fig. 1 is the structure schematic diagram of the forward organic solar cell device of the present invention;

图中:101基片;102阳极;103空穴传输层(HTL);104活性层;105阴极。In the figure: 101 substrate; 102 anode; 103 hole transport layer (HTL); 104 active layer; 105 cathode.

具体实施方式Detailed ways

以下结合具体实施例对本发明做进一步地详细说明,但本发明并不仅限于此。本发明中未详细说明的测定方法均为本领域常规技术。The present invention will be further described in detail below with reference to specific embodiments, but the present invention is not limited thereto. The assay methods not described in detail in the present invention are all conventional techniques in the art.

以下四个参数是衡量电池性能好坏的最直接的标准,具体如下:The following four parameters are the most direct standards to measure the battery performance, as follows:

1、短路电流密度(Short-circuit current density,Jsc):1. Short-circuit current density (Jsc):

OSC在短路条件下的工作电流,即外电路电压→0时,光伏器件两端输出的电流(A);The operating current of the OSC under short-circuit conditions, that is, the current (A) output by both ends of the photovoltaic device when the external circuit voltage → 0;

2、开路电压(Open-circuit voltage,Voc)2. Open-circuit voltage (Voc)

OSC在开路条件下的输出电压,即外电路电压→∞时,光伏器件两端输出的电压(V);The output voltage of OSC under open-circuit condition, that is, the output voltage (V) at both ends of the photovoltaic device when the external circuit voltage→∞;

3、填充因子(Fill Factor,FF)3. Fill Factor (FF)

光伏器件最大输出功Pm与Jsc和Voc乘积的比值:The ratio of the maximum output power Pm of the photovoltaic device to the product of Jsc and Voc:

Figure BDA0003542200630000031
Figure BDA0003542200630000031

4、光电转换效率PCE4. Photoelectric conversion efficiency PCE

指输出的电能与输入的光能的比值,是电池质量好坏最直接的反应。It refers to the ratio of the output electric energy to the input light energy, which is the most direct response to the quality of the battery.

Figure BDA0003542200630000032
Figure BDA0003542200630000032

式中,Pin为单位面积入射光功率(W),L为光伏器件有效面积(m2)。In the formula, Pin is the incident light power per unit area (W), and L is the effective area of the photovoltaic device (m 2 ).

正向的有机太阳能电池可以包含双层结构太阳能电池、体相异质结太阳能电池、PMHJ(planer-mixed hertero junction)结构太阳能电池、叠层电池结构(tandem solarcell)。优选的,正向的有机太阳能电池结构如图1所示包括:基片(101),阳极(102),空穴传输层(103),活性层(104),阴极(105)。其中,阴极为本发明所提供的复合阴极电极层。其中:Forward organic solar cells may include double-layer solar cells, bulk heterojunction solar cells, PMHJ (planer-mixed hertero junction) solar cells, and tandem solar cells. Preferably, the forward organic solar cell structure as shown in FIG. 1 includes: a substrate (101), an anode (102), a hole transport layer (103), an active layer (104), and a cathode (105). Wherein, the cathode is the composite cathode electrode layer provided by the present invention. in:

基片(101)是透明的。有机太阳能电池需要透明的底部来吸收入射光。基片可以是刚性的或弹性的。基片可以是塑料或玻璃。最好是基片有一个平滑的表面。无表面缺陷的基板是特别理想的选择。在一个优选的实施例中,基片是柔性的,可选于聚合物薄膜或塑料,其玻璃化温度Tg为150℃以上,较好是超过200℃,更好是超过250℃,最好是超过300℃。合适的柔性基板的例子有聚(对苯二甲酸乙二醇酯)(PET)和聚乙二醇(2,6-萘)(PEN)。The substrate (101) is transparent. Organic solar cells require a transparent bottom to absorb incident light. The substrate can be rigid or elastic. The substrate can be plastic or glass. Preferably the substrate has a smooth surface. Substrates free of surface defects are particularly desirable. In a preferred embodiment, the substrate is flexible, optionally a polymer film or plastic, with a glass transition temperature Tg above 150°C, preferably above 200°C, more preferably above 250°C, most preferably over 300°C. Examples of suitable flexible substrates are poly(ethylene terephthalate) (PET) and polyethylene glycol (2,6-naphthalene) (PEN).

阳极(102)可包括一导电金属或金属氧化物,或导电聚合物。阳极可以容易地接收从空穴传输层(HTL)或活性层输出的空穴。在一个的实施例中,阳极的功函数和活性层中的给体或作为HTL的p型半导体材料的HOMO能级或价带能级的差的绝对值小于0.5eV,较好是小于0.3eV,最好是小于0.2eV。阳极材料的例子包括但不限于:Al、Cu、Au、Ag、Mg、Fe、Co、Ni、Mn、Pd、Pt、ITO(氧化烟锡)、铝掺杂氧化锌(AZO)等。其他合适的阳极材料是已知的,本领域普通技术人员可容易地选择使用。阳极材料可以使用任何合适的技术沉积,如一合适的物理气相沉积法,包括射频磁控溅射,真空热蒸发,电子束(e-beam)等。在某些实施例中,阳极是图案结构化的。图案化的ITO导电基板可在市场上买到,并且可以用来制备根据本发明的器件。The anode (102) may comprise a conductive metal or metal oxide, or a conductive polymer. The anode can easily receive holes output from the hole transport layer (HTL) or the active layer. In one embodiment, the absolute value of the difference between the work function of the anode and the HOMO level or valence band level of the donor in the active layer or the p-type semiconductor material as the HTL is less than 0.5 eV, preferably less than 0.3 eV , preferably less than 0.2eV. Examples of anode materials include, but are not limited to, Al, Cu, Au, Ag, Mg, Fe, Co, Ni, Mn, Pd, Pt, ITO (fumed tin oxide), aluminum doped zinc oxide (AZO), and the like. Other suitable anode materials are known and can be readily selected for use by those of ordinary skill in the art. The anode material may be deposited using any suitable technique, such as a suitable physical vapor deposition method, including radio frequency magnetron sputtering, vacuum thermal evaporation, electron beam (e-beam), and the like. In certain embodiments, the anode is pattern-structured. Patterned ITO conductive substrates are commercially available and can be used to fabricate devices according to the present invention.

空穴传输层(103)是接收来自活性层的空穴并将空穴传输至阳极的材料,作为空穴传输物质,对空穴迁移率大的物质是合适的。具体作为例子,合适的有机HTM材料可选包含有如下结构单元的化合物:酞菁、卟啉、胺、芳香胺、联苯类三芳胺、噻吩、并噻吩如二噻吩并噻吩和并噻吩、吡咯、苯胺、咔唑、氮茚并氮芴及它们的衍生物。另外,合适的HTM也包括含有氟烃的聚合物、含有导电掺杂的聚合物、导电聚合物,如PEDOT:PSS。The hole transport layer (103) is a material that receives holes from the active layer and transports the holes to the anode, and as the hole transport material, a material having a high hole mobility is suitable. As specific examples, suitable organic HTM materials may optionally contain compounds containing the following structural units: phthalocyanines, porphyrins, amines, aromatic amines, biphenyl-like triarylamines, thiophenes, thiophenes such as dithienothiophene and thiophene, pyrrole , aniline, carbazole, indanazonium fluorene and their derivatives. In addition, suitable HTMs also include polymers containing fluorocarbons, polymers containing conductive dopants, conductive polymers such as PEDOT:PSS.

活性层(104),是能够吸收太阳光,产生激子并分离成电子和空穴,光谱吸收范围广的材料比较合适。可以由一种或多种材料混合构成,比较典型的例子是噻吩聚合物或其衍生物与富勒烯或其衍生物构成的给受体结合的活性层材料,目前比较典型的、常用的是包括给体材料PM6(Adv.Mater.2015,27,4655–4660)和受体材料Y6(Joule 3,1140-1151,April 17,2019)共混的材料。The active layer (104) is suitable for a material capable of absorbing sunlight, generating excitons and separating them into electrons and holes, and having a wide spectral absorption range. It can be composed of one or more materials. A typical example is the active layer material composed of thiophene polymer or its derivative and fullerene or its derivative, which is combined with the receptor. Currently, the typical and commonly used material is Materials including donor material PM6 (Adv. Mater. 2015, 27, 4655-4660) and acceptor material Y6 (Joule 3, 1140-1151, April 17, 2019) blended.

阴极(105)可包括导电金属或金属氧化物。阴极可以容易地接受从活性层或ETL输出的电子。阴极材料可以使用任何合适的技术沉积,如一合适的物理气相沉积法,包括射频磁控溅射,真空热蒸发,电子束(e-beam)等。The cathode (105) may comprise a conductive metal or metal oxide. The cathode can easily accept electrons output from the active layer or ETL. The cathode material can be deposited using any suitable technique, such as a suitable physical vapor deposition method, including radio frequency magnetron sputtering, vacuum thermal evaporation, electron beam (e-beam), and the like.

以下各实施例和对比例的器件制备,采用商业化的空穴传输层PEDOT:PSS、给体聚合物PM6、受体小分子Y6和电子传输层PFN-Br材料:The devices of the following examples and comparative examples were prepared using commercialized hole transport layer PEDOT:PSS, donor polymer PM6, acceptor small molecule Y6 and electron transport layer PFN-Br materials:

Figure BDA0003542200630000051
Figure BDA0003542200630000051

实施例1Example 1

阳极ITO/空穴传输层PEDOT:PSS/活性层PM6:Y6/阴极Yb/AgAnode ITO/hole transport layer PEDOT:PSS/active layer PM6:Y6/cathode Yb/Ag

将镀有170nmITO的导电玻璃基片用多种溶剂进行清洗,去离子水、丙酮、异丙醇依次清洗,然后进行紫外臭氧等离子处理;把经过0.22um滤膜过滤的PEDOT:PSS以3500rpm的速率旋涂在ITO上,涂覆厚度约40nm,然后150度退火15分钟,转入手套箱;在PEDOT:PSS上面旋涂约200nm的PM6:Y6共混活性层溶液(质量比为1:1.2,Y6浓度为1.2g/ml,溶剂为氯仿,添加剂为氯萘,氯萘体积占比0.5%),110度退火10分钟;将制备好的片子置于蒸镀腔内,在真空度2×10-7Torr以

Figure BDA0003542200630000052
的速率蒸镀Yb,厚度为5nm,再以
Figure BDA0003542200630000053
的速率蒸镀Ag,厚度为50nm。The conductive glass substrate plated with 170nm ITO was cleaned with a variety of solvents, followed by deionized water, acetone, and isopropanol, and then subjected to ultraviolet ozone plasma treatment; Spin-coat on ITO with a coating thickness of about 40 nm, then anneal at 150 degrees for 15 minutes, and transfer to the glove box; spin-coat about 200 nm of PM6:Y6 blended active layer solution on PEDOT:PSS (mass ratio is 1:1.2, The concentration of Y6 is 1.2g/ml, the solvent is chloroform, the additive is chloronaphthalene, the volume of chloronaphthalene is 0.5%), annealed at 110 degrees for 10 minutes; the prepared wafers are placed in the evaporation chamber, and the vacuum degree is 2 × 10 -7 Torr at
Figure BDA0003542200630000052
Yb was evaporated at a rate of 5 nm with a thickness of 5 nm.
Figure BDA0003542200630000053
Ag was evaporated at a rate of 50 nm in thickness.

实施例2Example 2

阳极ITO/空穴传输层PEDOT:PSS/活性层PM6:Y6/阴极Yb/AgAnode ITO/hole transport layer PEDOT:PSS/active layer PM6:Y6/cathode Yb/Ag

按所述的相同步骤重复进行实施例1,但在蒸镀腔内,在真空度2×10-6Torr以

Figure BDA0003542200630000061
的速率蒸镀Yb,厚度为10nm,再以
Figure BDA0003542200630000062
的速率蒸镀Ag,厚度为100nm。Repeat the same procedure as described in Example 1, but in the evaporation chamber, at a vacuum of 2×10 -6 Torr
Figure BDA0003542200630000061
Yb was evaporated at a rate of 10 nm with a thickness of 10 nm.
Figure BDA0003542200630000062
Ag was evaporated at a rate of 100 nm in thickness.

实施例3Example 3

阳极ITO/空穴传输层PEDOT:PSS/活性层PM6:Y6/阴极Yb/AgAnode ITO/hole transport layer PEDOT:PSS/active layer PM6:Y6/cathode Yb/Ag

按所述的相同步骤重复进行实施例1,但在蒸镀腔内,在真空度5×10-6Torr以

Figure BDA0003542200630000063
的速率蒸镀Yb,厚度为15nm,再以
Figure BDA0003542200630000064
的速率蒸镀Ag,厚度为200nm。Repeat the same procedure as described in Example 1, but in the evaporation chamber, under a vacuum of 5×10 -6 Torr
Figure BDA0003542200630000063
Yb was evaporated at a rate of 15 nm with a thickness of 15 nm.
Figure BDA0003542200630000064
Ag was evaporated at a rate of 200 nm in thickness.

实施例4Example 4

阳极ITO/空穴传输层PEDOT:PSS/活性层PM6:Y6/阴极Yb/AgAnode ITO/hole transport layer PEDOT:PSS/active layer PM6:Y6/cathode Yb/Ag

按所述的相同步骤重复进行实施例1,但在蒸镀腔内在真空度3×10-7Torr以

Figure BDA0003542200630000065
的速率蒸镀Yb,厚度为20nm,再以
Figure BDA0003542200630000066
的速率蒸镀Ag,厚度为200nm。Repeat the same procedure as described in Example 1, but with a vacuum of 3×10 -7 Torr in the evaporation chamber
Figure BDA0003542200630000065
Yb was evaporated at a rate of 20 nm with a thickness of 20 nm.
Figure BDA0003542200630000066
Ag was evaporated at a rate of 200 nm in thickness.

实施例5Example 5

阳极ITO/空穴传输层PEDOT:PSS/活性层PM6:Y6/阴极Yb/AgAnode ITO/hole transport layer PEDOT:PSS/active layer PM6:Y6/cathode Yb/Ag

按所述的相同步骤重复进行实施例1,但在蒸镀腔内在真空度1×10-6Torr以

Figure BDA0003542200630000067
的速率蒸镀Yb,厚度为20nm,再以
Figure BDA0003542200630000068
的速率蒸镀Ag,厚度为300nm。Repeat the same procedure as described in Example 1, but with a vacuum of 1×10 -6 Torr in the deposition chamber
Figure BDA0003542200630000067
Yb was evaporated at a rate of 20 nm with a thickness of 20 nm.
Figure BDA0003542200630000068
Ag was evaporated at a rate of 300 nm in thickness.

实施例6Example 6

阳极ITO/空穴传输层PEDOT:PSS/活性层PM6:Y6/阴极Yb/AgAnode ITO/hole transport layer PEDOT:PSS/active layer PM6:Y6/cathode Yb/Ag

按所述的相同步骤重复进行实施例1,但在蒸镀腔内在真空度1×10-7Torr以

Figure BDA0003542200630000069
的速率蒸镀Yb,厚度为20nm,再以
Figure BDA00035422006300000610
的速率蒸镀Ag,厚度为500nm。Repeat the same procedure as described in Example 1, but with a vacuum of 1×10 -7 Torr in the evaporation chamber
Figure BDA0003542200630000069
Yb was evaporated at a rate of 20 nm with a thickness of 20 nm.
Figure BDA00035422006300000610
Ag was evaporated at a rate of 500 nm in thickness.

对比例Comparative ratio

阳极ITO/空穴传输层PEDOT:PSS/活性层PM6:Y6/阴极缓冲层PFN-Br/阴极AgAnode ITO/hole transport layer PEDOT:PSS/active layer PM6:Y6/cathode buffer layer PFN-Br/cathode Ag

将镀有170nm ITO的导电玻璃基片用多种溶剂进行清洗,去离子水、丙酮、异丙醇依次清洗,然后进行紫外臭氧等离子处理;把经过0.22um滤膜过滤的PEDOT:PSS以3500rpm的速率旋涂在ITO上,涂覆厚度约40nm,然后150度退火15分钟,转入手套箱;在PEDOT:PSS上面旋涂约200nm的PM6:Y6共混活性层溶液(质量比为1:1.2,Y6浓度为1.2g/ml,溶剂为氯仿,添加剂为氯萘,氯萘体积占比0.5%),110度退火10分钟;将PFN-Br(溶剂:甲醇,浓度:0.5mg/ml)以3000rmp转速旋涂;将制备好的片子置于蒸镀腔内,再以

Figure BDA0003542200630000071
的速率蒸镀Ag,厚度为100nm。The conductive glass substrate coated with 170nm ITO was cleaned with a variety of solvents, followed by deionized water, acetone, and isopropanol, and then subjected to ultraviolet ozone plasma treatment; Speed spin-coated on ITO with a coating thickness of about 40 nm, then annealed at 150 degrees for 15 minutes, and transferred to the glove box; spin-coat about 200 nm of PM6:Y6 blended active layer solution on PEDOT:PSS (mass ratio is 1:1.2 , Y6 concentration is 1.2g/ml, the solvent is chloroform, the additive is chloronaphthalene, the volume of chloronaphthalene is 0.5%), annealed at 110 degrees for 10 minutes; PFN-Br (solvent: methanol, concentration: 0.5mg/ml) was Spin coating at 3000rmp; place the prepared film in the evaporation chamber, and then use
Figure BDA0003542200630000071
Ag was evaporated at a rate of 100 nm in thickness.

对制备出来的有机太阳能电池器件进行性能测试,在太阳光模拟器(SS-F5-3A)AM1.5G标准光照射下,测试电池电流-电压曲线,计算光电转换效率。The performance of the prepared organic solar cell device was tested, and the cell current-voltage curve was tested under the illumination of a solar simulator (SS-F5-3A) AM1.5G standard light, and the photoelectric conversion efficiency was calculated.

Figure BDA0003542200630000072
Figure BDA0003542200630000072

实施例1-5的电池性能与对比例相比性能相当,在光电转换效率方面提高了2.8%,填充因子提高了2.5%。The battery performance of Examples 1-5 is comparable to that of the comparative example, and the photoelectric conversion efficiency is increased by 2.8% and the fill factor is increased by 2.5%.

Claims (5)

1.一种用于正向有机太阳能电池的复合阴极电极层,其特征在于:复合阴极电极层是双层金属镱Yb和银Ag;所述Yb层一面为Ag层,另一面为正向有机太阳能电池的活性层。1. a composite cathode electrode layer for a forward organic solar cell, is characterized in that: the composite cathode electrode layer is a double-layer metal ytterbium Yb and silver Ag; one side of the Yb layer is an Ag layer, and the other side is a forward organic Active layer of solar cells. 2.根据权利要求1所述的一种用于正向有机太阳能电池的复合阴极电极层,其特征在于:Yb厚度是0.5nm-20nm,并且Ag厚度是5nm-500nm。2 . The composite cathode electrode layer for a forward organic solar cell according to claim 1 , wherein the thickness of Yb is 0.5 nm-20 nm, and the thickness of Ag is 5 nm-500 nm. 3 . 3.根据权利要求2所述的一种用于正向有机太阳能电池的复合阴极电极层,其特征在于:Yb厚度是10nm,并且Ag厚度是100nm。3 . The composite cathode electrode layer for a forward organic solar cell according to claim 2 , wherein the thickness of Yb is 10 nm, and the thickness of Ag is 100 nm. 4 . 4.一种制备权利要求1-3任一项所述的复合阴极电极层的方法,其特征在于:所述复合阴极电极层制备采取真空热蒸发镀膜法。4. A method for preparing the composite cathode electrode layer according to any one of claims 1-3, wherein the composite cathode electrode layer is prepared by a vacuum thermal evaporation coating method. 5.根据权利要求4所述的制备方法,其特征在于:所述真空热蒸发镀膜法的真空度是1×10-5~1×10-8Torr,Yb层的镀膜速率为
Figure FDA0003542200620000011
Ag层的镀膜速率为
Figure FDA0003542200620000012
5 . The preparation method according to claim 4 , wherein the vacuum degree of the vacuum thermal evaporation coating method is 1×10 −5 to 1×10 −8 Torr, and the coating rate of the Yb layer is 5 .
Figure FDA0003542200620000011
The deposition rate of the Ag layer is
Figure FDA0003542200620000012
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116234334A (en) * 2023-02-16 2023-06-06 武汉大学 A tin-lead hybrid perovskite solar cell based on double-layer metal electrodes and its preparation method

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080265751A1 (en) * 2004-08-10 2008-10-30 Cambridge Display Technology Limited Light Emissive Device
KR20120106479A (en) * 2011-03-18 2012-09-26 서울대학교산학협력단 Organic solar cells with improved electrical properties using electrical annealing and manufacturing method thereof
US20140353604A1 (en) * 2013-05-30 2014-12-04 Samsung Display Co., Ltd. Organic light emitting device having a bulk layer comprising a first and second material
KR20160094704A (en) * 2015-02-02 2016-08-10 서강대학교산학협력단 Transparent organic photovoltaic cell for smart window comprising ytterbium and buffer layer
CN109728174A (en) * 2017-10-27 2019-05-07 株式会社日本有机雷特显示器 Organic electroluminescent element, organic electroluminescent device and electronic equipment
CN110492017A (en) * 2019-08-01 2019-11-22 武汉华星光电半导体显示技术有限公司 A kind of electroluminescent device
CN111303177A (en) * 2020-03-26 2020-06-19 武汉华星光电半导体显示技术有限公司 Hole transport material and synthetic method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080265751A1 (en) * 2004-08-10 2008-10-30 Cambridge Display Technology Limited Light Emissive Device
KR20120106479A (en) * 2011-03-18 2012-09-26 서울대학교산학협력단 Organic solar cells with improved electrical properties using electrical annealing and manufacturing method thereof
US20140353604A1 (en) * 2013-05-30 2014-12-04 Samsung Display Co., Ltd. Organic light emitting device having a bulk layer comprising a first and second material
KR20160094704A (en) * 2015-02-02 2016-08-10 서강대학교산학협력단 Transparent organic photovoltaic cell for smart window comprising ytterbium and buffer layer
CN109728174A (en) * 2017-10-27 2019-05-07 株式会社日本有机雷特显示器 Organic electroluminescent element, organic electroluminescent device and electronic equipment
CN110492017A (en) * 2019-08-01 2019-11-22 武汉华星光电半导体显示技术有限公司 A kind of electroluminescent device
CN111303177A (en) * 2020-03-26 2020-06-19 武汉华星光电半导体显示技术有限公司 Hole transport material and synthetic method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116234334A (en) * 2023-02-16 2023-06-06 武汉大学 A tin-lead hybrid perovskite solar cell based on double-layer metal electrodes and its preparation method

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