CN114639943A - 具有集成波导发射器的集成电路封装 - Google Patents

具有集成波导发射器的集成电路封装 Download PDF

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CN114639943A
CN114639943A CN202111525710.2A CN202111525710A CN114639943A CN 114639943 A CN114639943 A CN 114639943A CN 202111525710 A CN202111525710 A CN 202111525710A CN 114639943 A CN114639943 A CN 114639943A
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waveguide
package
integrated circuit
grid array
integrated
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阿卜杜勒拉蒂夫·扎纳提
阿德里亚努斯·布伊斯曼
多米尼克·克萨韦尔·西蒙
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NXP BV
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Abstract

一种集成电路封装，包括：包封物；所述包封物中的半导体管芯，所述半导体管芯包括多个管芯端；集成波导发射器，其中所述集成波导发射器连接到所述管芯端中的一者；以及设置于所述封装的底部表面上的平面网格阵列。所述平面网格阵列包括：多个封装端，每一封装端被配置成焊接到印刷电路板；以及开口，其中所述开口与所述集成波导发射器对齐。

Description

具有集成波导发射器的集成电路封装
技术领域
本说明书涉及集成电路(IC)封装并且涉及包括集成电路封装的半导体装置。
背景技术
如今的趋势是将毫米波收发器更高地集成到小型集成电路封装中。这些封装的实际应用包括77GHz及以上的汽车雷达和60GHz及以上的5G通信系统。作为例子，具有集成发射器和接收器的雷达集成电路封装可用于77GHz的汽车雷达应用。
集成电路封装通常使用具有焊球的球栅阵列焊接在印刷电路板(PCB)上。到天线的连接通常是通过微带线实现的。通常，PCB材料由例如罗杰斯(Rogers)3003的毫米波基板组成。这些基板是昂贵的。布设毫米波路径所需的长馈线存在损耗。常见的是，从封装输出到天线中心，每通道存在约4dB的损耗。这些损耗降低了信噪比(SNR)，所述SNR降低了半导体装置的性能。
为了尝试克服这一问题，已知使用通过3D打印、模制或铣削制成的波导天线。3D波导天线允许以极低的损耗构建具有高性能的天线阵列和功率组合器等复杂结构。这允许在PCB上使用较短的波导过渡作为3D波导结构的馈送。这一解决方案仍需要使用相对昂贵的毫米波基板。通常，波导过渡会引起每通道约2dB的损耗。
发明内容
在随附的独立权利要求和从属权利要求中阐述本公开的各方面。来自从属权利要求的特征的组合可以按需要与独立权利要求的特征进行组合，且不仅仅是按照权利要求书中所明确阐述的那样组合。
根据本公开的方面，提供一种集成电路封装，包括：包封物；所述包封物中的半导体管芯，所述半导体管芯包括多个管芯端；集成波导发射器，其中所述集成波导发射器连接到所述管芯端中的一者；以及设置于所述封装的底部表面上的平面网格阵列，所述平面网格阵列包括：多个封装端，每一封装端被配置成焊接到连接件；以及开口，其中所述开口与所述集成波导发射器对齐。
提供所述平面网格阵列代替球栅阵列，所述球栅阵列通常用于将集成电路封装安装到例如印刷电路板(PCB)等基板。
本公开可以提供在封装的底侧上具有集成发射器的集成电路封装(或封装)与PCB之间的改进过渡。去除焊球消除了导致波导的表面电流的不连续的气隙。波导的不连续引起了信号不匹配，这减少了隔离且产生较高信号损耗。
本公开提出了毫米波过渡，其集成于在底部表面上具有辐射元件的封装中。集成波导发射器和平面网格阵列能够实现低成本但高性能的封装，所述封装可以集成到任何标准封装技术中并且可以与任何PCB材料匹配。
封装端中的每一者可以被配置成焊接到PCB。任选地，每一封装端包括涂层以实现与PCB上的相应连接件的电连接。例如，涂层可以包括：有机表面保护(OSP)、金属涂层(例如，银或锡(Sn))、预焊料或焊料。
集成电路封装可以是平坦的集成电路封装。所述封装可以包括基板或封装基板。
平面网格阵列中的开口可以被称为波导开口，因为所述开口可以馈送集成于PCB上的波导。在其它实施例中，开口可以馈送天线或其它结构。
任选地，开口是矩形、圆形、椭圆形或槽形。
任选地，开口设置于封装端中的一者中。封装端可以等效地被称为AC/DC接触衬垫。
任选地，平面网格阵列包括金属衬垫，并且开口设置于金属衬垫中。金属衬垫可以是铜衬垫。
任选地，开口可以由阻焊剂包围。在一些实施例中，开口可以由通孔或微型通孔的环包围。通孔可以填充有导电材料。
平面网格阵列可以包括多个开口。例如，多个开口可以设置于金属衬垫中。另外或可替换的是，多个封装端可以各自包括多个开口中的一者。
所述封装可以包括位于半导体管芯与平面网格阵列之间的再分布层。波导发射器可以设置于再分布层中。
任选地，再分布层包括单个金属层。这可以减小封装的制造成本。
所述封装可以包括多层层压物。波导发射器可以表面安装到多层层压物，或至少部分地嵌入到多层层压物中。
波导发射器几何形状可以与半导体管芯匹配。波导发射器可以将管芯端模式转换成波导模式。管芯端可以是单端式端或差分端。
所述封装可以包括被布置成将来自波导发射器的辐射反射到开口的屏蔽件。屏蔽件可以是设置于包封物中的集成屏蔽件。屏蔽件减少电磁辐射损耗并改进隔离。
任选地，屏蔽件或屏蔽件的一部分通过非导电粘合剂附接到再分布层，或附接到多层层压物。屏蔽件可以包括胶合到多层层压物的顶部表面的基板。
任选地，屏蔽件是周期性结构化屏蔽件。周期性结构化屏蔽件可以用作表面波滤波器以阻止电磁辐射的传播。
所述周期性结构化屏蔽件可以包括多个周期性地间隔开的结构。周期性地间隔开的结构可以附接或安装到屏蔽件的顶部表面。周期性地间隔开的结构可以由例如铜等导电材料制成。
任选地，屏蔽件包括背面短路板或反射器。
如果屏蔽件包括背面短路板或反射器，则屏蔽件的顶部表面可以金属化。因此，屏蔽件可以包括导电覆盖物。导电覆盖物可以通过一个或多个通孔连接到平面网格阵列。通孔可以将导电覆盖物连接到平面网格阵列的基部板。
任选地，屏蔽件包括硅和/或环氧树脂和/或PCB层压物制成的层。
任选地，屏蔽件位于邻近于半导体管芯的包封物中。
任选地，屏蔽件覆盖封装的顶部表面。这可以改进管芯的电磁灵敏度且改进封装的机械特性。
根据本公开的另一方面，提供一种半导体装置，包括本公开的第一方面的任何实施例或例子所述的集成电路封装；以及包括波导的印刷电路板PCB，其中：每一封装端焊接到所述PCB；并且所述波导与设置于所述平面网格阵列中的所述开口对齐。
平面网格阵列中的开口可以被称为波导开口。
在本公开中，将封装焊接到PCB确保芯片上的毫米波过渡与PCB之间的过渡在三维上是无间隙的，且因此可能不会出现表面电流的不连续。
此外，封装端直接焊接到PCB。不需要界面层。这引起了自调式的毫米波过渡，从而避免了波导发射器与PCB集成波导的不对齐。
任选地，PCB包括FR4基板。所述基板可能是优选的，因为其是相对低成本的基板。
任选地，波导是填充有电介质的波导。例如，波导可以填充有环氧树脂。使用填充有电介质的波导而非填充有空气的波导可以使得波导的长度且因此封装的大小减小，这可能更有成本效益。
任选地，波导是中空波导或填充有空气的波导。
开口(或波导开口)的形状和/或几何形状优选地被配置成匹配PCB中的波导。例如，波导开口可以是矩形、正方形、圆形或椭圆形。
任选地，PCB包括被配置成使平面网格阵列与波导匹配的谐振贴片天线。谐振贴片天线可以在PCB与平面网格阵列之间设置于PCB的顶部表面上。可替换的是，谐振贴片天线可以设置于PCB的内部层中，或设置于PCB的底部表面上。可能需要谐振贴片天线使PCB基板与封装基板匹配，以减少或消除电磁辐射所采用的路径中的不连续的存在，从而减少损耗。
半导体装置可以包括散热片。散热片可以与集成电路封装的顶部表面接触。散热片可以用作外部屏蔽件，以保护集成电路封装免受外部电磁辐射的影响。
散热片可以通过一个或多个机械固定件(例如，螺栓或螺钉)连接到半导体装置。
半导体装置可以包括耦合到PCB的天线馈电网络和耦合到天线馈电网络的天线阵列。任选地，天线阵列可以是槽式天线。
任选地，半导体装置可以是毫米波传感器。例如，传感器可以适于在高达60GHz或100GHz到160GHz(例如，144GHz)的频率下使用。应了解，本公开不限于这些频率，并且这些频率也不是合适频率的穷尽性列表。
根据本公开的另一方面，提供一种集成电路封装，包括：包封物；所述包封物中的半导体管芯，所述半导体管芯包括多个管芯端；所述包封物中的集成波导发射器，其中所述集成波导发射器连接到所述管芯端中的一者；设置于所述封装的底部表面中的开口，其中开口与波导发射器对齐；以及所述包封物中的被配置成将来自所述波导发射器的辐射反射到所述开口的集成屏蔽件。所述屏蔽件可以如本公开的上述例子或实施例中的任一者中所描述的。
附图说明
下文将仅借助于例子、参考附图来描述本公开的示意性实施例，在附图中相同的附图标记涉及相同的元件，并且其中：
图1是包括集成电路封装、波导发射器和PCB的现有技术半导体装置的横截面图；
图2是图1中的现有技术波导发射器的平面视图；
图3是包括集成电路封装的现有技术半导体装置的横截面图，所述集成电路封装具有安装到PCB的集成波导发射器；
图4是根据本公开的实施例的半导体装置的横截面图；
图5是根据本公开的另一实施例的包括周期性结构化屏蔽件的半导体装置的横截面图；
图6是根据本公开的另一实施例的包括背面短路板(back-short)的半导体装置的横截面图；
图7示出了根据本公开的另外实施例的包括周期性结构化屏蔽件的集成电路封装的横截面图；
图8示出了根据本公开的另外实施例的包括背面短路板的集成电路封装的横截面图；
图9示出了根据本公开的实施例的半导体装置的横截面图；
图10示出了根据本公开的平面网格阵列的实施例的仰视图；
图11示出了根据本公开的平面网格阵列的四个另外实施例的仰视图；
图12示出了根据本公开的平面网格阵列和波导开口的近距部分的另外实施例的仰视图；并且
图13示出了使用贴片天线使集成电路封装与三个不同的PCB基板匹配。
具体实施方式
下文参考附图描述了本公开的实施例。应了解，图式是示意性图示且未按比例绘制。
图1示出了现有技术半导体装置的横截面图。半导体装置包括集成电路封装，所述集成电路封装包括由包封物1包围的半导体管芯2。半导体管芯2可以等效地被称为管芯或芯片。球栅阵列包括将管芯2以机械方式和电气方式连接到波导发射器4的焊球3。波导发射器4集成在基板5上。基板5安装到包括集成波导11的印刷电路板(PCB)10。波导发射器4与波导11对齐。可替换的是，PCB 10可以由槽式天线代替。
图2更详细地示出了图1的波导发射器4和球栅阵列。图2中的区段A对应于图1中的虚线所指示的区段A。波导发射器包括具有第一末端和第二末端7的信号传输线6。信号传输线6的第一末端电连接到界面层5上的球栅阵列的焊球3中的一者。信号传输线6的第二末端7辐射到波导11中。使用信号传输线6、7从焊球3到波导11的连接产生相当大的损耗，通常约为2dB，这降低了SNR。
图3示出了现有技术半导体装置的另一例子，其中集成电路封装包括一对集成波导发射器4。包括焊球3的球栅阵列将封装安装到PCB 10。PCB 10包括各自具有金属化衬套12的一对集成波导11。波导发射器4与PCB 10中的波导11对齐，以便引导(曲线所描绘的)信号通过波导11。在此例子中，PCB 10安装到槽式天线阵列65。
在图3中，焊球3在封装(或波导发射器4)与波导11之间产生气隙。气隙可能会导致波导的表面电流的不连续，从而引起不匹配、较高的插入损耗和辐射泄漏。另外，PCB基板10通常由昂贵的毫米波基板(例如，罗杰斯3003)组成。波导发射器4和波导11还可能会变得不对齐，这同样增加了损耗。
图4示出了根据本公开的半导体装置的实施例。集成电路封装100包括由包封物或模制品1包围的半导体管芯2和集成波导发射器4两者。管芯2通过安装在封装基板6上的再分布层13电连接到波导发射器4。封装100的底部表面包括平面网格阵列，所述平面网格阵列包括封装端14(在图8到10中更详细地示出)，所述封装端14通过焊料或焊膏17电连接到PCB 10上的连接件16。PCB 10可以包括低成本基板，例如FR4。
PCB 10包括集成波导11，所述集成波导11可以是中空的或填充有电介质。如图所示，在图4中，波导发射器4与波导11之间不存在气隙。并且，通过将封装端14直接焊接到PCB连接件16，集成波导发射器4可能无法变得与PCB不对齐。
图5示出了根据本公开的半导体装置的另一实施例。半导体管芯2包括多个管芯端21。再分布层13设置于管芯2与封装100的底部表面上的平面网格阵列之间。平面网格阵列包括封装端14和波导开口27。多个管芯端21通过再分布层13中的金属化结构15电连接到相应封装端14。
再分布层13还包括连接到管芯端21中的一者的集成波导发射器4。管芯2可以具有单端式端或差分端。波导发射器4将管芯端模式转换成波导模式。波导发射器4被布置成使得所发射的电磁辐射被引导到平面网格阵列中的波导开口27。封装端14焊接到PCB 10上的连接件16。PCB 10包括具有金属衬套12的集成波导11。波导11可以填充有电介质材料，或可以是中空的。波导11与封装中的波导开口27对齐。
封装100还包括集成屏蔽件30。如图5所示，屏蔽件30由邻近于管芯2的包封物1包围。屏蔽件30将波导发射器4所发射的电磁辐射反射或部分反射到波导开口27。这可以减少电磁辐射损耗并改进隔离。在此实施例中，屏蔽件30是周期性结构化屏蔽件并且包括第一层31和用作表面波滤波器的周期性结构32。周期性结构32由例如铜等导电材料制成。第一层31安装到再分布层(RDL)13。第一层31可以包括硅、环氧树脂或PCB层压物或由硅、环氧树脂或PCB层压物构成，但不限于这些材料。第一层31可以等效地被称为基板或屏蔽件基板。
图6示出了图5的半导体装置，其中屏蔽件包括背面短路板30而非周期性结构化屏蔽件。在此实施例中，背面短路板30包括第一层31和导电覆盖物34。导电覆盖物34包括通孔35，所述通孔35将导电覆盖物34连接到平面网格阵列，任选地连接到平面网格阵列的底部。在此实施例中，不需要利用粘合剂来将第一层31安装到再分布层13。第一层31可以包括硅、环氧树脂或PCB层压物或由硅、环氧树脂或PCB层压物构成，但不限于这些材料。
图7示出了集成电路封装100的另一实施例。在图7中，半导体管芯2通过焊球3连接到管芯端21且连接到集成波导发射器4。应了解，可以使用到焊球3的替代性电连接件。管芯端21通过设置于多层层压物13'上的通孔或其它电连接件15连接到封装100的底部表面上的封装端14。封装端14设置于平面网格阵列中。
在图7中，封装100包括周期性结构化屏蔽件30，其类似于图5所示的屏蔽件。由导电材料制成的多个周期性结构32附接到第一层(或基板)31。第一层(或基板)31可以包括硅、环氧树脂或PCB层压物或由硅、环氧树脂或PCB层压物构成，但不限于这些材料。屏蔽件30通过非导电粘合剂33安装在波导发射器4上方且安装到多层层压物13'的顶部表面。
图8示出了图7中的封装100，其中屏蔽件包括背面短路板30而非周期性结构化屏蔽件。屏蔽件的第一层(或基板)31包括导电覆盖物34。导电覆盖物34通过通孔35连接到平面网格阵列(或封装端14)。背面短路板30通过非导电粘合剂33安装在波导发射器4上方且安装到多层层压物13'的顶部表面。在其它实施例中，可以不提供粘合剂33(如图6所示)。
图9示出了根据本公开的半导体装置的另外实施例。散热片40与封装100的顶部表面接触。散热片40通过一对机械固定件42(例如，螺栓或螺钉)连接到半导体装置。机械固定件42还可以增加半导体装置的稳定性和牢固度。
集成电路封装100包括集成波导发射器4且通过平面网格阵列25安装到PCB 10。PCB 10包括具有金属化衬套12的填充有电介质的波导11。平面网格阵列25包括与波导发射器4和波导11对齐的开口27。PCB10包括将PCB 10连接到天线馈电网络60的金属层50。天线馈电网络60耦合到天线阵列65。天线阵列65可以例如是槽式天线阵列。
图10更详细地示出了平面网格阵列25的实施例的仰视图。平面网格阵列25包括多个封装端或AC/DC接触衬垫29。封装端29中的四个各自包括开口27。在一些实施例中，可以提供多于或少于四个开口27。在此实施例中，开口27是矩形的以匹配矩形波导。然而，应了解，优选地选择开口27的形状和大小以匹配PCB中的波导11。此匹配可以防止电磁辐射所采用的路径中的不连续的存在，从而减少损耗。
图11示出了根据本公开的平面网格阵列25的四个更多个实施例。在这些实施例中，波导开口27设置于金属衬垫26中而非设置于封装端29中。金属衬垫26可以是铜衬垫。应了解，尽管将金属衬垫26示出为居中地定位在平面网格阵列25上的正方形形状，但也可以使用其它形状和定位。如图所示，开口27可以是圆形、正方形、矩形、槽形和/或椭圆形。开口27可以由如图11中的右上图所示的阻焊剂28包围。阻焊剂28防止焊料随后流入开口27中，所述焊料的流入可能会形成短路。
如图12所示，开口27可以由通孔或微型通孔72的环70包围。通孔72可以填充有导电材料。环70可以将平面网格阵列25连接到封装100的引线框架或再分布层。通孔72可以用作屏障以防止来自开口27的辐射泄漏，从而防止来自一个开口27的辐射到达另一开口27。
图13示出了使用谐振贴片天线使集成电路封装100与三个不同的PCB基板10、10'和10”匹配。尽管封装100可以被设计成匹配特定PCB基板，但可能需要使用具有不同基板的封装100。因此，PCB可能需要使用谐振贴片来与封装100匹配。图13中的顶部行示出了半导体装置的三个简化横截面图，并且底部行示出了对应PCB的俯视图。
在图13中的最左侧图式中，PCB 10由与封装基板类似的材料制成，因此不需要阻抗匹配。在中间图式中，PCB基板10'不同于封装基板，且因此谐振贴片80'插入PCB的内部层中。应了解，可替换的是，贴片80'可以放置在PCB的顶部或底部上。在图13中的最右侧图式中，谐振贴片80”放置在PCB 10”的顶部上，以便使PCB 10”与封装基板匹配。此匹配可以防止电磁辐射所采用的路径中的不连续的存在，从而减少损耗。
在图13中，示出了矩形波导。然而，应了解，也可以使用任何形状的波导，例如椭圆形波导或圆形波导。波导优选地匹配平面网格阵列中的开口27的形状(如图11所描述的)。
因此，已描述了一种集成电路封装和一种并有集成电路封装的半导体装置。集成电路封装包括包封物和包封物中的半导体管芯(或芯片)。半导体管芯包括多个管芯端。波导发射器还集成到所述封装中，其中集成波导发射器连接到管芯端中的一者。平面网格阵列设置于封装的底部表面上，所述平面网格阵列包括：多个封装端，每一封装端被配置成焊接到连接件；以及开口，其中开口与集成波导发射器对齐。每一封装端可以焊接到包括波导的PCB。波导可以与设置于平面网格阵列中的开口对齐。
尽管已描述了本公开的具体实施例，但是应了解，可以在所附权利要求书的范围内作出许多修改、添加和/或替代。

Claims (10)

1.一种集成电路封装，其特征在于，包括：
包封物；
所述包封物中的半导体管芯，所述半导体管芯包括多个管芯端；
集成波导发射器，其中所述集成波导发射器连接到所述管芯端中的一者；以及
设置于所述封装的底部表面上的平面网格阵列，所述平面网格阵列包括：
多个封装端，每一封装端被配置成焊接到连接件；以及
开口，其中所述开口与所述集成波导发射器对齐。
2.根据权利要求1所述的集成电路封装，其特征在于，所述开口设置于所述封装端中的一者中。
3.根据权利要求1所述的集成电路封装，其特征在于，所述平面网格阵列包括金属衬垫并且所述开口设置于所述金属衬垫中。
4.根据在前的任一项权利要求所述的集成电路封装，其特征在于，包括被布置成将来自所述波导发射器的辐射反射到所述波导开口的屏蔽件。
5.根据权利要求4所述的集成电路封装，其特征在于，所述屏蔽件包括硅或环氧树脂或PCB层压物制成的层。
6.根据权利要求4或权利要求5所述的集成电路封装，其特征在于，所述屏蔽件是周期性结构化屏蔽件，或其中所述屏蔽件包括背面短路板。
7.根据在前的任一项权利要求所述的集成电路封装，其特征在于，包括位于所述半导体管芯与所述平面网格阵列之间的再分布层，其中所述波导发射器设置于所述再分布层中。
8.根据权利要求7所述的集成电路封装，其特征在于，所述再分布层包括单个金属层。
9.根据权利要求4至6中任一项所述的集成电路封装，其特征在于，包括位于所述半导体管芯与所述平面网格阵列之间的多层层压物，其中所述屏蔽件通过非导电粘合剂附接到所述多层层压物。
10.一种半导体装置，其特征在于，包括：
根据权利要求1至9中任一项所述的集成电路封装；以及
包括波导的印刷电路板PCB，其中：
每一封装端焊接到所述PCB；并且
所述波导与设置于所述平面网格阵列中的所述开口对齐。
CN202111525710.2A 2020-12-16 2021-12-14 具有集成波导发射器的集成电路封装 Pending CN114639943A (zh)

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018118765A1 (de) * 2018-08-02 2020-02-06 Endress+Hauser SE+Co. KG Hochfrequenzbaustein
US12058804B2 (en) * 2021-02-09 2024-08-06 Aptiv Technologies AG Formed waveguide antennas of a radar assembly
EP4366077A1 (en) * 2022-11-04 2024-05-08 Nxp B.V. A system

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5969461A (en) 1998-04-08 1999-10-19 Cts Corporation Surface acoustic wave device package and method
FR2786959B1 (fr) 1998-12-08 2001-05-11 Thomson Csf Composant a ondes de surface encapsule et procede de fabrication collective
JP3617633B2 (ja) * 2000-10-06 2005-02-09 三菱電機株式会社 導波管接続部
JP2002164465A (ja) * 2000-11-28 2002-06-07 Kyocera Corp 配線基板、配線ボード、それらの実装構造、ならびにマルチチップモジュール
DE10350346B4 (de) 2002-10-29 2012-12-20 Kyocera Corp. Hochfrequenzleitungs-Wellenleiter-Konverter und Hochfrequenzpaket
US6800946B2 (en) 2002-12-23 2004-10-05 Motorola, Inc Selective underfill for flip chips and flip-chip assemblies
JP2005020046A (ja) * 2003-06-23 2005-01-20 Mitsubishi Electric Corp 電磁装置およびその製造方法
KR100856497B1 (ko) * 2007-04-26 2008-09-04 전자부품연구원 광전변환모듈
US7498896B2 (en) 2007-04-27 2009-03-03 Delphi Technologies, Inc. Waveguide to microstrip line coupling apparatus
FR2945379B1 (fr) * 2009-05-05 2011-07-22 United Monolithic Semiconductors Sa Composant miniature hyperfrequences pour montage en surface
US20110037530A1 (en) 2009-08-11 2011-02-17 Delphi Technologies, Inc. Stripline to waveguide perpendicular transition
US8168464B2 (en) 2010-01-25 2012-05-01 Freescale Semiconductor, Inc. Microelectronic assembly with an embedded waveguide adapter and method for forming the same
US8574960B2 (en) 2010-02-03 2013-11-05 Stats Chippac, Ltd. Semiconductor device and method of forming cavity adjacent to sensitive region of semiconductor die using wafer-level underfill material
US8680936B2 (en) 2011-11-18 2014-03-25 Delphi Technologies, Inc. Surface mountable microwave signal transition block for microstrip to perpendicular waveguide transition
DE102012203293B4 (de) 2012-03-02 2021-12-02 Robert Bosch Gmbh Halbleitermodul mit integriertem Wellenleiter für Radarsignale
US9136230B2 (en) * 2013-03-28 2015-09-15 Broadcom Corporation IC package with integrated waveguide launcher
US9190739B2 (en) 2013-06-24 2015-11-17 Delphi Technologies, Inc. Antenna with fifty percent overlapped subarrays
JP6269127B2 (ja) * 2014-02-07 2018-01-31 富士通株式会社 高周波モジュール及びその製造方法
US10103447B2 (en) 2014-06-13 2018-10-16 Nxp Usa, Inc. Integrated circuit package with radio frequency coupling structure
US9666930B2 (en) * 2014-10-23 2017-05-30 Nxp Usa, Inc. Interface between a semiconductor die and a waveguide, where the interface is covered by a molding compound
US20160197400A1 (en) 2015-01-07 2016-07-07 Delphi Technologies, Inc. Circuit board assembly with high and low frequency substrates
US9806040B2 (en) 2015-07-29 2017-10-31 STATS ChipPAC Pte. Ltd. Antenna in embedded wafer-level ball-grid array package
US10468738B2 (en) 2016-03-15 2019-11-05 Aptiv Technologies Limited Signaling device including a substrate integrated waveguide coupled to a signal generator through a ball grid array
US10199707B2 (en) 2016-10-13 2019-02-05 Aptiv Technologies Limited Ball-grid-array radio-frequency integrated-circuit printed-circuit-board assembly for automated vehicles
US10468736B2 (en) 2017-02-08 2019-11-05 Aptiv Technologies Limited Radar assembly with ultra wide band waveguide to substrate integrated waveguide transition
US11183751B2 (en) 2017-09-20 2021-11-23 Aptiv Technologies Limited Antenna device with direct differential input useable on an automated vehicle
US10680305B2 (en) 2018-02-08 2020-06-09 Aptiv Technologies Limited Signal handling device including a surface integrated waveguide and a resonating cavity formed in multiple substrate layers
US11557491B2 (en) 2019-10-31 2023-01-17 Nxp B.V. Selective underfill assembly and method therefor

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