CN114608508A - Wafer thickness measuring device of square resistance measuring point normal position - Google Patents
Wafer thickness measuring device of square resistance measuring point normal position Download PDFInfo
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- CN114608508A CN114608508A CN202210289362.1A CN202210289362A CN114608508A CN 114608508 A CN114608508 A CN 114608508A CN 202210289362 A CN202210289362 A CN 202210289362A CN 114608508 A CN114608508 A CN 114608508A
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- 230000007246 mechanism Effects 0.000 claims abstract description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- 238000001514 detection method Methods 0.000 claims abstract description 28
- 238000011065 in-situ storage Methods 0.000 claims abstract description 22
- 239000000523 sample Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000004891 communication Methods 0.000 claims abstract description 7
- 238000006073 displacement reaction Methods 0.000 claims description 17
- 230000005540 biological transmission Effects 0.000 claims description 8
- 238000013519 translation Methods 0.000 claims description 6
- 238000012625 in-situ measurement Methods 0.000 claims description 5
- 238000005259 measurement Methods 0.000 abstract description 35
- 235000012431 wafers Nutrition 0.000 description 64
- 238000000034 method Methods 0.000 description 11
- 238000013461 design Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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Abstract
The present disclosure relates to a wafer thickness measuring device of a square resistance measuring point in situ. The measuring device comprises a fixed base; the wafer carrying table is movably connected with the fixed base to carry the silicon wafer to be tested; a measuring mechanism having a measuring probe; the lifting mechanism is connected to the fixed base, and the measuring mechanism is movably connected to the lifting mechanism so as to be capable of moving in the vertical direction and enabling the measuring mechanism to be close to or far away from the slide holder; the height detection mechanism is used for detecting the current height information when the measuring probe touches a substrate, and the substrate is the slide holder or a silicon wafer placed on the slide holder; and the controller is respectively in communication connection with the measuring mechanism and the height detection mechanism. Therefore, the problem that measurement efficiency and application range are difficult to be considered by measurement equipment in the prior art is solved.
Description
Technical Field
The disclosure relates to the technical field of silicon wafer measuring equipment, in particular to a wafer thickness measuring device with square resistance measuring points in situ.
Background
Measuring the resistivity of a silicon wafer is an important process in the manufacturing and detection of semiconductor materials.
The traditional resistivity measuring method generally comprises the steps of measuring the square resistance value of a silicon wafer by a certain device, measuring the thickness of the silicon wafer by another device, and calculating the resistivity of the silicon wafer by a calculation formula and a metering relation among the resistivity, the thickness and the square resistance. Although resistivity can be obtained in this manner, the following problems occur: (1) the two devices separately measure the square resistance and the thickness, and the measurement precision of in-situ measurement cannot be achieved; (2) the process needs two different devices for measurement, thereby increasing the cost, occupying space resources and process time; (3) in the occasion of obtaining the resistivity distribution of the silicon wafer, the thickness of multiple points to be measured is long in test time and low in efficiency.
In order to solve some of the problems, a technical concept of measuring the resistance value of the silicon chip by using a capacitance method is provided, and measuring equipment of different models such as ADE6034, Wafer Check 7000, 7200 and the like is derived from the technical concept, so that the measuring efficiency of the square resistance value of the silicon chip is improved. However, the equipment has high requirement on the resistivity uniformity of the whole silicon wafer, so that the equipment is only suitable for partial silicon wafers with good resistivity uniformity. For a sample with uneven resistivity or a silicon wafer with a large difference with the resistivity range of the correction sample, the measurement result obtained by using the measurement has a large error. Therefore, the application range of this type of measuring device (which measures the resistance value of a silicon wafer by using a capacitance method) is limited.
Therefore, a more reasonable technical scheme needs to be provided to solve the current technical problem, aiming at the problem that the measurement equipment in the prior art is difficult to take both the measurement efficiency and the application range into consideration.
Disclosure of Invention
The purpose of the present disclosure is to provide a wafer thickness measuring device of square resistance measuring point in situ, so as to solve the problem that the measuring equipment in the prior art is difficult to consider both the measuring efficiency and the application range.
In order to achieve the above object, the present disclosure provides an in-situ wafer thickness measuring apparatus for a sheet resistance measuring point, comprising:
a fixed base;
the wafer carrying table is movably connected to the fixed base to carry a silicon wafer to be tested;
a measuring mechanism having a measuring probe;
the lifting mechanism is connected to the fixed base, and the measuring mechanism is movably connected to the lifting mechanism so as to be capable of moving in the vertical direction and enabling the measuring mechanism to be close to or far away from the slide holder;
the height detection mechanism is used for detecting the current height information when the measuring probe touches a substrate, and the substrate is the slide holder or a silicon wafer placed on the slide holder; and
and the controller is respectively in communication connection with the measuring mechanism and the height detection mechanism.
In one possible design, the lifting mechanism comprises a movable cross beam, a fixed upright extending in a vertical direction, and a linear drive; the fixed upright post is connected to the fixed base; the movable cross beam is horizontally arranged, one end of the movable cross beam is provided with a sliding chute matched with the guide rail, and the sliding chute is clamped on the guide rail; the other end of the movable cross beam is connected with the measuring mechanism; the linear driver is connected to the movable cross beam to drive the movable cross beam to move along the guide rail.
In one possible design, the linear drive is configured as a pneumatic cylinder, a hydraulic cylinder or a linear module;
or, the linear driver comprises a first lead screw and a first motor; the movable cross beam is provided with a first screw hole matched with the first screw rod; the first screw rod is inserted into the first screw hole, one end of the first screw rod is rotatably connected to the fixed base, and the other end of the first screw rod is in transmission connection with the first motor.
In one possible design, the height detection mechanism is disposed on the movable cross member.
In one possible design, the slide holder is connected to the fixed base through a translation mechanism; the translation mechanism includes:
the supports are arranged into two groups which are arranged at intervals, and each group of supports is connected with the fixed base;
the second polished rod extends along the transverse direction and is configured into at least two groups; each group of second polished rods is arranged in parallel and at intervals, and two ends of each second polished rod are connected to the support in a one-to-one correspondence manner; and
a drive member connected to the stage and communicatively connected to the controller;
the slide holder is provided with at least two groups of guide holes matched with the second polished rods, and the second polished rods are inserted into the guide holes; so that the slide table moves along the second polished rod under the driving of the driving piece.
In one possible design, the slide holder is further provided with a second screw hole;
the driving piece comprises a second screw rod and a second motor; the second screw rod is formed into a structure matched with the second screw hole and is inserted into the second screw hole;
one end of the second screw rod is rotatably connected to the support, and the other end of the second screw rod is in transmission connection with the second motor; so that the slide table can move along the polished rod when the second motor moves;
the polished rods are arranged into two groups, and the screw rods are arranged in the middle of the two groups of polished rods.
In one possible design, the stage is circular in shape.
In one possible design, the height detection mechanism includes at least one of a laser displacement sensor, a grating scale displacement sensor, and a magnetic grating scale displacement sensor.
In one possible design, the controller is configured as a PLC logic controller, a central processing unit, a digital signal processor, an application specific integrated circuit, or a field programmable gate array.
According to the technical scheme, the in-situ wafer thickness measuring device for the square resistance measuring point adopts the non-contact mode to measure, so that the surface of the silicon wafer can be protected to a certain extent, the position between the measuring mechanism and the wafer carrying table does not need to be adjusted manually in the measuring process, and the operation error of personnel can be avoided in the process. Meanwhile, based on the movement of the slide holder and the measuring mechanism, the consistency of the measuring position of the slide holder can be ensured, the thickness of the wafer can be measured while the square resistance of the wafer is measured, and the measuring time is effectively saved. Furthermore, the resistivity can be quickly obtained according to the acquired resistance value and the thickness value of the silicon wafer, so that a detector can quickly obtain a detection result, and the waiting time is reduced.
By adopting the in-situ measurement mode, the thickness measurement of the silicon wafer, the sheet resistance measurement and the subsequent resistivity calculation are almost simultaneously carried out, and the single-point measurement efficiency is greatly improved. In addition, the thickness value of each measuring point can be obtained, and the thickness of the whole wafer is more accurate; the square resistor and the wafer thickness can be synchronously measured in the measuring device, so that the occupation of space resources is reduced, and the cost is saved.
Additional features and advantages of the disclosure will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure without limiting the disclosure. In the drawings:
FIG. 1 is a schematic perspective view of an in-situ wafer thickness measurement apparatus for measuring sheet resistance measurement points according to one embodiment of the present disclosure;
FIG. 2 is a side view of an in-situ wafer thickness measurement device provided by the present disclosure in one embodiment; wherein the measuring device is in an initialized state;
FIG. 3 is a side view of an in-situ wafer thickness measurement device of sheet resistance measurement points according to the present disclosure in one embodiment, wherein a silicon wafer has been placed on a stage;
FIG. 4 is a side view of an in-situ wafer thickness measurement device provided by the present disclosure in one embodiment, wherein the measurement device is in a measurement state;
FIG. 5 is a schematic perspective view of an in-situ wafer thickness measurement apparatus for measuring sheet resistance of a wafer according to another embodiment of the present disclosure;
FIG. 6 is a side view of an in situ wafer thickness measurement apparatus for sheet resistance measurement points provided by the present disclosure in another embodiment; wherein the measuring device is in an initialized state;
FIG. 7 is a side view of an in-situ wafer thickness measurement device of sheet resistance measurement points according to the present disclosure in another embodiment, wherein a silicon wafer has been placed on a stage;
FIG. 8 is a side view of a wafer thickness measurement device in situ with sheet resistance measurement points provided by the present disclosure in another embodiment, wherein the measurement device is in a measurement state.
Description of the reference numerals
The method comprises the following steps of 1-a fixed base, 2-a wafer carrying table, 3-a measuring mechanism, 4-a height detection mechanism, 5-a movable cross beam, 6-a fixed upright post, 7-a guide rail and 8-a silicon wafer.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be described clearly and completely with reference to the accompanying drawings.
According to an embodiment of the present disclosure, a wafer thickness measuring device for in-situ measurement of sheet resistance measurement points is provided. In which figures 1 to 8 show different embodiments thereof.
As shown in fig. 1 to 8, the in-situ wafer thickness measuring apparatus for measuring sheet resistance includes a fixed base 1, a stage 2, a measuring mechanism 3, a lifting mechanism, a height detecting mechanism 4 and a controller.
Specifically, the slide holder 2 is movably connected to the fixed base 1 to bear a silicon wafer to be tested; the measuring mechanism 3 has a measuring probe; the lifting mechanism is connected to the fixed base 1, and the measuring mechanism 3 is movably connected to the lifting mechanism so as to be capable of moving in the vertical direction and enabling the measuring mechanism 3 to be close to or far away from the slide holder 2; the height detection mechanism 4 is used for detecting current height information when the measuring probe touches a substrate, wherein the substrate is the slide holder 2 or a silicon wafer 8 placed on the slide holder 2; the controller is respectively connected with the measuring mechanism 3 and the height detecting mechanism 4 in a communication way.
In the present disclosure, the stage may be configured with reference to a prior art resistance measurement device such as a four-probe square resistance meter.
The specific detection mode is as follows: when the slide holder 2 is in an unloaded state, the measuring mechanism 3 moves vertically downwards under the action of the lifting mechanism, so that the measuring probe can contact the slide holder 2, and in this case, the measuring mechanism 3 can detect the current height information H1To the controller. Thereafter, the measuring mechanism 3 is moved vertically upward so that the measuring probe is away from the stage 2. Under the condition, a silicon wafer to be detected can be placed on the wafer carrying platform 2, the measuring mechanism 3 vertically moves downwards to enable the measuring probe to contact the silicon wafer 8, and the measuring mechanism 3 can detect the current height information H at the moment2To the controller. H1And H2The difference in height of (a) is the thickness T of the silicon wafer 8.
The silicon wafer resistivity calculation formula can be preset in the controller, so that the silicon wafer resistivity can be quickly calculated according to the information detected by the height detection mechanism.
Specifically, the resistivity calculation formula of the silicon wafer 8 is as follows:
T＝H1-H2；
ρ＝Rs*T；
wherein T is the thickness of the silicon wafer, H1For the height obtained at initialization, H2The height R of the lower needle of the measuring probe contacting the silicon chip 8 is measured after the slide glass is loadedsThe square resistance, ρ is the resistivity.
Through the technical scheme, the in-situ wafer thickness measuring device of the square resistance measuring point adopts the non-contact mode to measure, so that the surface of the silicon wafer 8 can be protected to a certain extent, the position between the measuring mechanism 3 and the wafer carrying table does not need to be adjusted manually in the measuring process, and the operation error of personnel can be avoided in the process. Meanwhile, based on the movement of the slide holder and the measuring mechanism 3, the consistency of the measuring position can be ensured, the thickness of the wafer can be measured while the square resistance of the wafer is measured, and the measuring time is effectively saved. Furthermore, the resistivity value can be quickly obtained according to the acquired resistance value and thickness value of the silicon wafer 8, so that a detector can quickly obtain a detection result, and the waiting time is reduced.
By adopting the in-situ measurement mode, the thickness measurement, the sheet resistance measurement and the subsequent resistivity calculation of the silicon wafer 8 are almost simultaneously carried out, thereby greatly improving the efficiency of single-point measurement. In addition, the thickness value of each measuring point can be obtained, and the thickness of the whole wafer is more accurate; the square resistor and the wafer thickness can be synchronously measured in the measuring device, so that the occupation of space resources is reduced, and the cost is saved.
In a possible embodiment, the lifting mechanism comprises a mobile cross-beam 5, a fixed upright 6 extending in the vertical direction and a linear actuator; the fixed upright 6 is connected to the fixed base 1; the movable cross beam 5 is horizontally arranged, one end of the movable cross beam is provided with a sliding chute matched with the guide rail 6, and the sliding chute is clamped on the guide rail; the other end of the movable cross beam 5 is connected with the measuring mechanism 3; the linear driver is connected to the movable beam 5 to drive the movable beam 5 to move along the guide rail. In this way, under the driving of the linear driver, the movable beam 5 can be moved stably and reliably along the fixed column 6, so that the measuring probe can be in soft contact with the surface of the silicon wafer 8, thereby reducing the impact on the silicon wafer 8. In addition, based on the guiding and limiting functions of the fixed upright post 6, the accuracy of the action position of the measuring probe is improved, and the measuring precision is further ensured.
Alternatively, the linear actuator may be configured as a pneumatic cylinder, a hydraulic cylinder, or a linear actuator. In this way, the movable cross member 5 can be smoothly moved along the fixed post 6 by the driving of the linear elevating mechanism such as the air cylinder, the hydraulic cylinder, or the linear module. In this regard, those skilled in the art can flexibly configure the device according to actual needs.
As another option, the linear drive includes a first lead screw and a first motor; the movable cross beam 5 is provided with a first screw hole matched with the first screw rod; the first screw rod is inserted into the first screw hole, one end of the first screw rod is rotatably connected to the fixing base 1, and the other end of the first screw rod is in transmission connection with the first motor. Therefore, under the dual action of the first motor and the first screw rod, the movable cross beam 5 can move stably at a uniform speed along the fixed upright post 6.
In one embodiment provided by the present disclosure, the height detection mechanism 4 is disposed on the movable beam 5. In this way, the measuring mechanism 3 and the height detecting mechanism 4 can be moved synchronously, so that the current height information can be accurately detected, and the detection result can be transmitted to the controller.
Wherein, in fig. 1 to 4, the height detection mechanism 4 is disposed near the fixed upright 6; in fig. 5 to 8, the height detection mechanism 4 is provided near the measurement probe.
In one embodiment provided by the present disclosure, the slide stage 2 is connected to the fixed base 1 through a translation mechanism; the translation mechanism comprises a support, a second polished rod and a driving piece. The supports are arranged into two groups which are arranged at intervals, and each group of supports is connected with the fixed base 1; the second polished rod extends along the transverse direction and is configured into at least two groups; each group of second polished rods is arranged in parallel and at intervals, and the two ends of each second polished rod are connected to the support in a one-to-one correspondence manner; and the driving piece is connected to the slide holder 2 and is in communication connection with the controller.
The slide holder 2 is provided with at least two groups of guide holes matched with the second polish rods, and the second polish rods are inserted in the guide holes. Thereby, the slide holder 2 can be smoothly moved along the second polished rod under the driving of the driving piece.
Alternatively, the slide holder 2 is further provided with a second screw hole. The driving piece comprises a second screw rod and a second motor; the second screw rod is formed into a structure matched with the second screw hole and is inserted into the second screw hole; one end of the second screw rod is rotatably connected to the support, and the other end of the second screw rod is in transmission connection with a second motor; so that the slide holder 2 can move along the polish rod when the second motor moves; wherein, the polished rod configuration is two sets of, and the lead screw sets up the intermediate position in two sets of polished rods.
Therefore, under the dual action of the second motor and the second screw rod, the slide holder 2 can move stably along the polish rod at a uniform speed, and then the slide holder can accurately move to a preset detection position.
Alternatively, the driving member may be a linear driver of the prior art, and all of them fall into the technical idea of the present disclosure as long as the driving member can drive the stage to move smoothly.
In one embodiment provided by the present disclosure, the stage 2 is circular in shape, which is useful for aligning the position of the silicon wafer 8.
In the present disclosure, the height detection mechanism 4 includes at least one of a laser displacement sensor, a grating scale displacement sensor, and a magnetic grating scale displacement sensor. Therefore, the position of the measuring mechanism 3 can be accurately and reliably detected, and the controller can effectively analyze and judge according to the acquired position information, so that the resistivity of the current silicon wafer can be quickly and accurately calculated.
At least one of the height detection means 4 may be configured as only three of a laser displacement sensor, a grating scale displacement sensor, and a magnetic grating scale displacement sensor; or more than one displacement sensor can be configured in the same type; but also a combination between different types of displacement sensors. In this regard, those skilled in the art can flexibly configure the device according to the detection requirements.
It should also be noted that the height detection mechanism includes, but is not limited to, three sensors, i.e., a laser displacement sensor, a grating ruler displacement sensor and a magnetic grating ruler displacement sensor, and any other suitable measuring mechanism capable of achieving height detection also falls within the scope of the present disclosure.
In the present disclosure, the controller is configured as a PLC logic controller, a central processing unit, a digital signal processor, an application specific integrated circuit, or a field programmable gate array.
Specifically, the controller is configured as a Central Processing Unit (CPU). In yet other embodiments, the controller may be one configured as a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), or a Field Programmable Gate Array (FPGA). In addition, the controller may also be a Network Processor (NP), other programmable logic device, discrete gate or transistor logic device, discrete hardware component. In this regard, those skilled in the art can flexibly configure the device according to the actual application environment.
Further, the measuring mechanism 3, the height detecting mechanism 4 and the controller may transmit data through various wireless transmission protocols known in the art, such as GPRS, Wi-Fi, bluetooth, etc., so as to reduce the laying of signal lines. Of course, wired transmission of data may also be achieved through a communication cable or the like, which is not limited by the present disclosure.
In the present disclosure, the measuring mechanism 3 is used for measuring the sheet resistance, and can be optionally provided with various types of test probes to realize the measurement of the sheet resistance. Therefore, the technicians in the field can flexibly select and match the detection system according to the actual detection requirements.
The preferred embodiments of the present disclosure are described in detail with reference to the accompanying drawings, however, the present disclosure is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present disclosure within the technical idea of the present disclosure, and these simple modifications all belong to the protection scope of the present disclosure.
Claims (9)
1. An in-situ wafer thickness measuring device for a sheet resistance measuring point, comprising:
a fixed base (1);
the wafer carrying table (2) is movably connected to the fixed base (1) to carry a silicon wafer to be tested;
a measuring mechanism (3) having a measuring probe;
the lifting mechanism is connected to the fixed base (1), and the measuring mechanism (3) is movably connected to the lifting mechanism so as to be capable of moving in the vertical direction and enabling the measuring mechanism (3) to be close to or far away from the slide holder (2);
the height detection mechanism (4) is used for detecting current height information when the measuring probe touches a substrate, and the substrate is the slide holder (2) or a silicon wafer (8) placed on the slide holder (2); and
and the controller is respectively in communication connection with the measuring mechanism (3) and the height detection mechanism (4), and the wafer thickness is determined according to the height difference before and after the silicon wafer (8) is placed.
2. The in-situ wafer thickness measuring device of the sheet resistance measuring point according to claim 1, wherein the lifting mechanism comprises a movable beam (5), a fixed column (6) extending in a vertical direction, and a linear driver; a guide rail (7) is arranged on the fixed upright post (6), and the fixed upright post (6) is connected to the fixed base (1); the movable cross beam (5) is horizontally arranged, one end of the movable cross beam is provided with a sliding chute matched with the guide rail (7), and the sliding chute is clamped on the guide rail (7); the other end of the movable cross beam (5) is connected with the measuring mechanism (3); the linear driver is connected to the movable cross beam (5) to drive the movable cross beam (5) to move along the guide rail (7).
3. The in-situ wafer thickness measuring device of claim 2, wherein the linear actuator is configured as a pneumatic cylinder, a hydraulic cylinder or a linear module;
or, the linear driver comprises a first lead screw and a first motor; a first screw hole matched with the first screw rod is formed in the movable cross beam (5); the first screw rod is inserted into the first screw hole, one end of the first screw rod is rotatably connected to the fixing base (1), and the other end of the first screw rod is in transmission connection with the first motor.
4. The in-situ wafer thickness measuring device according to claim 2, wherein the height detection mechanism (4) is disposed on the movable beam (5).
5. The in-situ wafer thickness measuring device of the sheet resistance measuring point as claimed in claim 1, wherein the stage (2) is connected to the fixed base (1) by a translation mechanism; the translation mechanism includes:
the supports are arranged into two groups which are arranged at intervals, and each group of supports is connected to the fixed base (1);
the second polished rod extends along the transverse direction and is configured into at least two groups; each group of second polish rods is arranged in parallel and at intervals, and two ends of each second polish rod are connected to the support in a one-to-one correspondence manner; and
the driving piece is connected to the slide holder (2) and is in communication connection with the controller;
the slide holder (2) is provided with at least two groups of guide holes matched with the second polish rods, and the second polish rods are inserted into the guide holes; so that the slide holder (2) moves along the second polished rod under the driving of the driving piece.
6. The in-situ wafer thickness measuring device of the sheet resistance measuring point as claimed in claim 5, wherein the slide holder (2) is further provided with a second screw hole;
the driving piece comprises a second screw rod and a second motor; the second screw rod is formed into a structure matched with the second screw hole and is inserted into the second screw hole;
one end of the second screw rod is rotatably connected to the support, and the other end of the second screw rod is in transmission connection with the second motor; so as to enable the slide holder (2) to move along the polish rod when the second motor moves;
the polished rods are arranged into two groups, and the screw rods are arranged in the middle of the two groups of polished rods.
7. The in-situ wafer thickness measuring device of claim 1, wherein the stage (2) is circular in shape.
8. The device for in-situ measurement of the thickness of a wafer according to any one of claims 1 to 7, wherein the height detection mechanism (4) comprises at least one of a laser displacement sensor, a grating ruler displacement sensor and a magnetic grating ruler displacement sensor.
9. The apparatus of any of claims 1-7, wherein the controller is configured as a PLC logic controller, a CPU, a DSP, an ASIC, or a FPGA.
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| CN202210289362.1A CN114608508A (en) | 2022-03-22 | 2022-03-22 | Wafer thickness measuring device of square resistance measuring point normal position |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117542759A (en) * | 2023-11-28 | 2024-02-09 | 无锡卓海科技股份有限公司 | Square resistance measuring device and measuring method |
| CN117542759B (en) * | 2023-11-28 | 2024-07-09 | 无锡卓海科技股份有限公司 | Square resistance measuring device and measuring method |
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