CN104851823A - X and Y double-axis linkage non-contact wafer warping degree measuring equipment - Google Patents
X and Y double-axis linkage non-contact wafer warping degree measuring equipment Download PDFInfo
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- CN104851823A CN104851823A CN201510157648.4A CN201510157648A CN104851823A CN 104851823 A CN104851823 A CN 104851823A CN 201510157648 A CN201510157648 A CN 201510157648A CN 104851823 A CN104851823 A CN 104851823A
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- wafer
- slide block
- test module
- vacuum
- short lead
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
- G01B5/30—Measuring arrangements characterised by the use of mechanical techniques for measuring the deformation in a solid, e.g. mechanical strain gauge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
Abstract
X and Y double-axis linkage non-contact wafer warping degree measuring equipment mainly solve the problem that existing test equipment is complicated in structure, huge in volume and inflexible in application link. The equipment mainly consists of a long guide rail, short guide rails, a support plate, sliding blocks, a sliding block A, a laser measuring head and a scale. After the abovementioned components are mounted, a test module is formed, and the test module is placed on a vacuum cavity. Through movement of the three sliding blocks on the long guide rail and the two short guide rails, movement and linkage in X-axis and Y-axis directions within a test range are realized. The scale is utilized to realize positioning of any point within the test range, and a position signal can be repeatedly positioned or automatically moved and fed back. The X and Y double-axis linkage non-contact wafer warping degree measuring equipment is simple in structure and strong in universality, can be used at will in a matched mode under conditions of normal temperature, high temperature, vacuum and the like, is applicable to measurement of the warping degree of a wafer in the semiconductor industry, and can be widely applied to the technical field of semiconductor coating.
Description
Technical field
The present invention relates to one and can not contact wafer, in test zone X, Y Dual-spindle linked any point is measured, mobile and can the measuring equipment of resetting with scale, be mainly used in the detection of semiconductor coated film industry silicon wafer warpage degree, belong to semiconductive thin film deposition applications and preparing technical field.
Background technology
In semiconductive thin film processing procedure, the state of wafer is vital, wafer stands the impacts such as high temperature, vacuum, radiofrequency field in reaction chamber must have physical deformation, the deflection of wafer is very important data in technics institution, especially the wafer in TSV industry, because of the wafer processing mode that it is special, the stress etc. produced in air residual when there is different materials thermal coefficient of expansion, bonding in the process of silicon chip and sheet glass bonding, bonding process, makes the wafer of TSV industry in thin film manufacture process, have larger warpage.If the degree of silicon wafer warpage can not be grasped, the exploitation of film will be had a strong impact on.And existing testing equipment is bulky, cost is higher.
Summary of the invention
The present invention is for the purpose of solving the problem, mainly solve testing equipment complex structure in prior art, the bulky and inflexible problem of application link, and provide a kind of structure simple, highly versatile, the conditions such as normal temperature, high temperature, vacuum can arbitrarily arrange in pairs or groups use and can be suitable for semicon industry silicon wafer warpage degree measurement equipment.
For achieving the above object, the present invention adopts following technical proposals: X, Y Dual-spindle linked contactless silicon wafer warpage degree measuring equipment, comprises test module (13).Described test module (13) is formed primarily of long guideway (5), short lead rail (2), supporting bracket (1), slide block (3), slide block A (10), laser measuring head (8) and scale (9).Above-mentioned long guideway (5) is connected with two slide blocks (3) respectively by the screw (4) at two ends.Two slide blocks (3) are an assembly with two short lead rail (2), and two short lead rail (2) are connected by screw with supporting bracket (1) and fix.Supporting bracket (1) is fixed by screw and two risers (12) divided into.Jackscrew (11) is installed between described supporting bracket (1) and riser (12), be used for adjust supporting bracket (1) horizontal plane.Described long guideway (5) is provided with slide block A (10), and the fixed head (7) that slide block A (10) will be equipped with laser measuring head (8) by screw (6) is fixed.Above-mentioned slide block A (10) and long guideway (5), slide block (3) and short lead rail (2) adopt to be slidably matched and realize moving.Above-mentioned long guideway (5) is connected with scale (9) with short lead rail (2), plays the effect of location.Above all parts just forms a test module (13) after installing, test module (13) is placed on vacuum cavity (15), transparent cover plate (17) utilizes O type rubber ring (14) and vacuum cavity (15) to form a confined space, driven by aspiration pump and realize vacuum, heating plate (16) can, as the support platform of wafer under vacuum or atmospheric condition, can be wafer heats simultaneously.
Beneficial effect of the present invention and feature are:
The present invention is non-contact type measuring device, can not damage or polluting wafer, structure is simple, reliability is high, highly versatile, maintainability is good, with low cost, disparate modules of can arranging in pairs or groups can realize the conversion of measurement function fast, can realize the measurement environment pattern that normal temperature and pressure, high-temperature pressure, normal-temperature vacuum, high-temperature vacuum these four kinds are different respectively.X, Y Dual-spindle linked in test zone, can resetting or automatic mobile and feedback position signal.Semiconductor coated film technical field can be widely used in.
Accompanying drawing explanation
Fig. 1 is the structural representation of basic module of the present invention.
Fig. 2 is the using state schematic diagram of the present invention when working.
Fig. 3 is the using state schematic diagram after Fig. 2 removes transparent cover plate.
Fig. 4 is the longitudinal cross section of Fig. 2.
Embodiment
Embodiment
With reference to Fig. 1-4, X, Y Dual-spindle linked contactless silicon wafer warpage degree measuring equipment, comprise test module 13.Described test module 13 is formed primarily of long guideway 5, short lead rail 2, supporting bracket 1, slide block 3, slide block A10, laser measuring head 8 and scale 9.Above-mentioned long guideway 5 is connected with two slide blocks 3 respectively by the screw 4 at two ends.Two slide blocks 3 and two short lead rail 2 are an assembly, and two short lead rail 2 to be connected with supporting bracket 1 by screw and to fix.Supporting bracket 1 is fixed by screw and two risers 12 divided into.Between described supporting bracket 1 and riser 12, jackscrew 11 is installed, is used for adjusting the horizontal plane of supporting bracket 1.Described long guideway 5 is provided with slide block A10, and the fixed head 7 that laser measuring head 8 is housed is fixed by screw 6 by slide block A10.Above-mentioned slide block A10 and long guideway 5, slide block 3 and short lead rail 2 adopt to be slidably matched and realize moving.Above-mentioned long guideway 5 is connected with scale 9 with short lead rail 2, plays the effect of location.Above all parts just forms a test module 13 after installing, test module 13 is placed on vacuum cavity 15, transparent cover plate 17 utilizes O type rubber ring 14 and vacuum cavity to form a confined space, driven by aspiration pump and realize vacuum, heating plate 16 can, as the support platform of wafer under vacuum or atmospheric condition, can be wafer heats simultaneously.
Fig. 4 is using state schematic diagram when the present invention coordinates vacuum cavity 15, heating plate 16 in Reality simulation condition, transparent cover plate 17 works, and is also one of innovation point of the present invention.
Method of operation: be placed on by wafer on heating plate 16, is placed on test module 13 on vacuum cavity 15, by three slide blocks 3 on moving long guide rail 5 and two short lead rail 2, realizes the X-axis in test specification, the movement of Y-axis both direction and interlock.Scale 9 is utilized to realize the location of any point in test specification in addition, and repetitive positioning accuracy, utilize jackscrew 11 by the Level-adjusting of supporting bracket 1 to consistent with heating plate 16, the conversion of wafer any point or a line Z axis is measured, by going out configuration of surface and the warpage degree of wafer to the collection of measurement data and finishing analysis by laser measuring head 8.Measurement now both can realize normal pressure and temperature state also can provide heat by heating plate 16, becomes constant-pressure and high-temperature state.When transparent cover plate 17 detain as on vacuum cavity 15 time, have aspiration pump and O type rubber ring 14 to realize vacuum state, now can realize normal temperature under vacuum state and measure and high temperature measurement state.
Claims (3)
1. X, Y Dual-spindle linked contactless silicon wafer warpage degree measuring equipment, comprise test module, it is characterized in that: described test module is formed primarily of long guideway, short lead rail, supporting bracket, slide block, slide block A, laser measuring head and scale, above-mentioned long guideway is connected with two slide blocks respectively by the screw at two ends, and two slide blocks and two short lead rail are an assembly; Above-mentioned two short lead rail to be connected with supporting bracket by screw and to fix, and supporting bracket is fixed by screw and two risers divided into; Between described supporting bracket and riser, jackscrew is installed; Described long guideway is provided with slide block A, and the fixed head that laser measuring head is housed is fixed by screw by slide block A; Above-mentioned slide block A and long guideway, slide block and short lead rail adopt and are slidably matched; Above-mentioned long guideway is connected with scale with short lead rail, and above all parts just forms a test module after installing.
2. X, Y Dual-spindle linked contactless silicon wafer warpage degree measuring equipment as claimed in claim 1, it is characterized in that: test module is placed on vacuum cavity, transparent cover plate utilizes O type rubber ring and vacuum cavity to form a confined space, driven by aspiration pump and realize vacuum, heating plate as the support platform of wafer, is wafer heats under vacuum or atmospheric condition.
3. the X of application as described in claim 1 and 2, the method of operation of Y Dual-spindle linked contactless silicon wafer warpage degree measuring equipment, it is characterized in that: wafer is placed on heating plate, test module is placed on vacuum cavity, by three slide blocks on moving long guide rail and two short lead rail, realize the X-axis in test specification, the movement of Y-axis both direction and interlock, scale is utilized to realize location and the repetitive positioning accuracy of any point in test specification, utilize jackscrew by the Level-adjusting of supporting bracket to consistent with heating plate, the conversion of wafer any point or a line Z axis is measured by laser measuring head, by going out configuration of surface and the warpage degree of wafer to the collection of measurement data and finishing analysis, measurement now both can realize normal pressure and temperature state also can provide heat by heating plate, become constant-pressure and high-temperature state, when transparent cover plate 17 detain as on vacuum cavity time, aspiration pump and O type rubber ring is had to realize vacuum state, the normal temperature now realized under vacuum state is measured and high temperature measurement state.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510157648.4A CN104851823B (en) | 2015-04-03 | 2015-04-03 | X, the contactless silicon wafer warpage degree measuring apparatus of Y Dual-spindle linkeds |
| PCT/CN2015/084422 WO2016155151A1 (en) | 2015-04-03 | 2015-07-20 | X and y double-axis linkage non-contact wafer warping degree measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510157648.4A CN104851823B (en) | 2015-04-03 | 2015-04-03 | X, the contactless silicon wafer warpage degree measuring apparatus of Y Dual-spindle linkeds |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104851823A true CN104851823A (en) | 2015-08-19 |
| CN104851823B CN104851823B (en) | 2018-03-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510157648.4A Active CN104851823B (en) | 2015-04-03 | 2015-04-03 | X, the contactless silicon wafer warpage degree measuring apparatus of Y Dual-spindle linkeds |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104851823B (en) |
| WO (1) | WO2016155151A1 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105021099A (en) * | 2015-07-16 | 2015-11-04 | 北京工业大学 | Large-size ground wafer warping measuring clamp |
| CN105789083A (en) * | 2016-05-27 | 2016-07-20 | 中南大学 | Light waveguide wafer surface detecting device |
| CN107478171A (en) * | 2017-08-31 | 2017-12-15 | 长江存储科技有限责任公司 | The monitoring method and monitoring device of a kind of buckling deformations |
| CN107525457A (en) * | 2016-06-16 | 2017-12-29 | 株式会社三丰 | industrial machinery |
| CN109411381A (en) * | 2018-10-15 | 2019-03-01 | 德淮半导体有限公司 | Focusing method and wafer detecting apparatus in wafer characterization processes |
| CN111307058A (en) * | 2020-03-20 | 2020-06-19 | 华天慧创科技（西安）有限公司 | Non-contact warping degree measuring jig and measuring method |
| CN112864071A (en) * | 2021-01-18 | 2021-05-28 | 长鑫存储技术有限公司 | Tool and method for correcting wafer position in semiconductor manufacturing machine |
| CN113206019A (en) * | 2021-04-08 | 2021-08-03 | 北京北方华创微电子装备有限公司 | Device and method for detecting warping degree of wafer |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109373923A (en) * | 2018-11-30 | 2019-02-22 | 中国矿业大学(北京) | A kind of monitoring system and method for mining tunnel surrouding rock deformation |
| CN113155023B (en) * | 2021-04-02 | 2023-02-07 | 甘肃旭盛显示科技有限公司 | Method and system for measuring glass warping degree of liquid crystal substrate |
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| CN102931117A (en) * | 2012-11-21 | 2013-02-13 | 苏州矽科信息科技有限公司 | Method for measuring deformation in wafer transmission by using principle of light reflection |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101169337A (en) * | 2006-10-24 | 2008-04-30 | 缪朝晖 | LED measuring instrument |
| CN101207058A (en) * | 2006-12-20 | 2008-06-25 | 株式会社迪思科 | Chip measuring device and laser processing machine |
| CN101299125A (en) * | 2008-07-03 | 2008-11-05 | 塔工程有限公司 | Array tester |
| WO2013182880A2 (en) * | 2012-06-07 | 2013-12-12 | Soitec | Deposition systems having deposition chambers configured for in-situ metrology with radiation deflection and related methods |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105021099A (en) * | 2015-07-16 | 2015-11-04 | 北京工业大学 | Large-size ground wafer warping measuring clamp |
| CN105789083A (en) * | 2016-05-27 | 2016-07-20 | 中南大学 | Light waveguide wafer surface detecting device |
| CN105789083B (en) * | 2016-05-27 | 2019-02-01 | 中南大学 | A kind of optical waveguide crystal column surface detection device |
| CN107525457A (en) * | 2016-06-16 | 2017-12-29 | 株式会社三丰 | industrial machinery |
| CN107525457B (en) * | 2016-06-16 | 2020-12-01 | 株式会社三丰 | Industrial machine |
| CN107478171A (en) * | 2017-08-31 | 2017-12-15 | 长江存储科技有限责任公司 | The monitoring method and monitoring device of a kind of buckling deformations |
| CN107478171B (en) * | 2017-08-31 | 2019-10-18 | 长江存储科技有限责任公司 | A kind of monitoring method and monitoring device of buckling deformations |
| CN109411381A (en) * | 2018-10-15 | 2019-03-01 | 德淮半导体有限公司 | Focusing method and wafer detecting apparatus in wafer characterization processes |
| CN111307058A (en) * | 2020-03-20 | 2020-06-19 | 华天慧创科技（西安）有限公司 | Non-contact warping degree measuring jig and measuring method |
| CN112864071A (en) * | 2021-01-18 | 2021-05-28 | 长鑫存储技术有限公司 | Tool and method for correcting wafer position in semiconductor manufacturing machine |
| CN112864071B (en) * | 2021-01-18 | 2022-04-01 | 长鑫存储技术有限公司 | Tool and method for correcting wafer position in semiconductor manufacturing machine |
| CN113206019A (en) * | 2021-04-08 | 2021-08-03 | 北京北方华创微电子装备有限公司 | Device and method for detecting warping degree of wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104851823B (en) | 2018-03-23 |
| WO2016155151A1 (en) | 2016-10-06 |
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Address after: No.900 Shuijia, Hunnan District, Shenyang City, Liaoning Province Patentee after: Tuojing Technology Co.,Ltd. Address before: 110179 3rd floor, No.1-1 Xinyuan street, Hunnan New District, Shenyang City, Liaoning Province Patentee before: PIOTECH Co.,Ltd. |