CN113155023B - Method and system for measuring glass warping degree of liquid crystal substrate - Google Patents
Method and system for measuring glass warping degree of liquid crystal substrate Download PDFInfo
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- CN113155023B CN113155023B CN202110363514.3A CN202110363514A CN113155023B CN 113155023 B CN113155023 B CN 113155023B CN 202110363514 A CN202110363514 A CN 202110363514A CN 113155023 B CN113155023 B CN 113155023B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
Abstract
The invention provides a method and a system for measuring the warping degree of liquid crystal substrate glass, and belongs to the field of liquid crystal substrate glass. The warpage measuring method comprises the following steps: a working area is defined on the bearing platform, and a measuring area is defined in the working area; acquiring a three-dimensional coordinate of a working area surface, wherein the working area surface is a zero surface I; determining the three-dimensional coordinate of a track surface of the movement of the measuring lens in the measuring area surface based on the three-dimensional coordinate of the zero surface I, wherein the track surface is a zero surface III; the zero plane III is parallel to the zero plane I in a three-dimensional space, and H is more than 0 mm within the range of H mm of the depth of field of the measuring lens; in the sample measuring process, the planning measuring lens moves according to the three-dimensional coordinate point of the zero plane III, and the three-dimensional coordinates of the sampling point on the sample are collected in real time; and calculating the vertical distance from each sampling point to the zero plane III, and calculating the warping degree value of the sample wafer according to the vertical distance. The method can eliminate the mechanical error of the zero plane I, so that the measurement result is more accurate.
Description
Technical Field
The invention relates to the field of liquid crystal substrate glass, in particular to a method and a system for measuring the warping degree of the liquid crystal substrate glass.
Background
The warping degree is an important index for evaluating the substrate glass, and the quality of the warping degree directly reflects whether the production process is stable and reliable, and has great influence on the customer process technology.
The existing method for measuring the glass warpage of the liquid crystal substrate cannot completely eliminate the mechanical error of the 00-level marble platform surface of the liquid crystal substrate measuring device, and is not beneficial to the increasingly strict requirement on the warpage. And the warpage measurement is implemented once, after the whole plate sample is required to be measured, the warpage value is obtained by performing cloud computing on each measuring point, and finally the warpage value is output, so that the warpage value cannot be output in real time.
Disclosure of Invention
In order to solve the above problems, an object of an embodiment of the present invention is to provide a method and a system for measuring a glass warp of a liquid crystal substrate.
In order to achieve the above object, a first aspect of the present invention provides a method for measuring a warp degree of a liquid crystal substrate glass, based on a warp degree measuring device, where the warp degree measuring device includes a carrying platform and a laser measuring lens, and the method includes:
a working area is defined on the bearing platform, and a measuring area is defined in the working area;
acquiring a three-dimensional coordinate of a working area surface, wherein the working area surface is a zero surface I;
determining the three-dimensional coordinate of a track surface of the movement of the measuring lens in the measuring area surface based on the three-dimensional coordinate of the zero surface I, wherein the track surface is a zero surface III; the zero plane III is parallel to the zero plane I in a three-dimensional space, and H is more than 0 mm within the range of H mm of the depth of field of the measuring lens;
in the sample measuring process, the planning measuring lens moves according to the three-dimensional coordinate point of the zero plane III, and the three-dimensional coordinates of the sampling point on the sample are collected in real time;
and calculating the vertical distance from each sampling point to the zero plane III, and calculating the warping value of the sample wafer according to the vertical distance.
Optionally, the determining, based on the three-dimensional coordinate of the zero plane I, a three-dimensional coordinate of a trajectory plane of the measurement lens moving on the measurement area plane, where the trajectory plane is the zero plane III, includes:
establishing a mechanical coordinate system by taking a mechanical origin of the measuring device as a mechanical zero point;
establishing a first coordinate system and a second coordinate system by taking a mechanical coordinate system as a reference, wherein the first coordinate system and the second coordinate system are relative coordinate systems;
establishing a corresponding relation between the first coordinate system and the second coordinate system according to the positions of the first coordinate system and the second coordinate system in the mechanical coordinate system;
taking the first coordinate system as a measurement coordinate system, and acquiring a three-dimensional coordinate of a zero plane I in the first coordinate system;
calculating the three-dimensional coordinate of the zero plane I in a second coordinate system according to the three-dimensional coordinate of the zero plane I and the corresponding relation between the first coordinate system and the second coordinate system;
and e millimeters are added to all coordinate points of the zero plane I in the second coordinate system in the Z-axis direction, so that the three-dimensional coordinate of the zero plane III in the second coordinate system is obtained, wherein e is greater than 0 millimeter.
Optionally, the correspondence between the mechanical coordinate system, the first coordinate system, and the second coordinate system includes:
defining the mechanical coordinate system as (X, Y, Z), defining a first coordinate system as (X1, Y1, Z1), defining a second coordinate system as (X, Y, Z), and defining the first coordinate system and the mechanical coordinate system to have a corresponding relation: (x 1, y1, z 1) = (x-a, y-b, z-f),
the corresponding relation between the second coordinate system and the mechanical coordinate system is (X, Y, Z) = (X-c, Y-d, Z-f);
calculating the corresponding relation between the first coordinate system and the second coordinate system according to the corresponding relation between the first coordinate system and the mechanical coordinate system and the corresponding relation between the second coordinate system and the mechanical coordinate system: (X, Y, Z) = (X1-c + a, Y1-d + b, Z1);
calculating the corresponding relation between the three-dimensional coordinate of the zero plane III in the second coordinate system and the three-dimensional coordinate of the zero plane I in the first coordinate system as follows: (X) III ,Y III ,Z III )＝(x1-c+a,y1-d+b,z1+e)；
Wherein c is more than or equal to a, d is more than or equal to b, and f is more than or equal to 0.
Optionally, the movement of the planning measurement lens according to the three-dimensional coordinate point of the zero plane III is performed to collect the three-dimensional coordinates of the sampling point on the sample in real time, and the method includes:
in the process that the measuring lens moves according to the three-dimensional coordinate point of the zero plane III, the three-dimensional coordinates of the sampling point on the sample wafer are picked up by taking a second coordinate system as a measuring coordinate system and respectively taking an X axis and a Y axis L millimeter as intervals;
the calculating the vertical distance from each sampling point to the zero plane III comprises the following steps:
for each sampling point, calculating the distance W between the sampling point and the corresponding point in the Z-axis direction according to the three-dimensional coordinates of the sampling point and the three-dimensional coordinates of the corresponding point of the zero plane III i Wherein L is more than or equal to 1 mm.
Optionally, calculating the warping degree value of the sample according to the vertical distance includes:
after the sample wafer is measured, calculating the warping degree value of the sample wafer according to the vertical distances from all sampling points on the sample wafer to a zero plane III; or
And in the sample measurement process, calculating the warping degree value of the measured area on the sample in real time according to the vertical distance from the sampling point in the measured area on the sample to the zero plane III, and taking the warping degree value calculated when the sample measurement is finished as the warping degree value of the sample.
Optionally, in the sample measurement process, the warp value of the measured area on the sample is calculated in real time according to the vertical distance from the sampling point in the measured area on the sample to the zero plane III, including the following steps:
defining the maximum distance W from the sample to the zero plane III max And a minimum distance W min ；
Acquiring the three-dimensional coordinates of the sampling point in the second coordinate system in real time, and acquiring the three-dimensional coordinates of the sampling point in the second coordinate system according to the zero plane III corresponding to the sampling pointThree-dimensional coordinates in a two-coordinate system, and calculating the vertical distance W from the sampling point to the zero plane III i ；
Comparing W corresponding to N sampling points of initial acquisition i Value N, W i The maximum and minimum values of the values are used as the maximum distance W max And a minimum distance W min And calculating the warping degree value w of the measured area on the sample: w = W max -W min (ii) a Wherein N is more than or equal to 2;
in the subsequent acquisition process, picking up W corresponding to M sampling points each time i Value of W i The values are respectively separated from the maximum distance W max And a minimum distance W min Comparing, and updating the maximum value and the minimum value obtained by comparison to the maximum distance W max And a minimum distance W min According to the updated maximum distance W max And a minimum distance W min Calculating the warping degree value w of the measured area on the sample: w = W max -W min Wherein M is more than or equal to 1;
the warp value that calculates when accomplishing the sample wafer measurement and obtains includes as the warp value of sample wafer:
and after the sample is measured, taking the warpage value w of the measured area obtained by the last calculation as the warpage value of the sample.
Optionally, the warpage measuring method further includes:
outputting warp value information of a measured area on the sample in real time, wherein the warp value information comprises: warp value W and maximum distance W of measured area max Minimum distance W min And a maximum distance W max And a minimum distance W min Coordinate point information of the corresponding sampling point.
Optionally, the warpage measuring method further includes: and updating the three-dimensional coordinate information of the zero plane I in real time.
The invention provides a liquid crystal substrate glass warp measuring system, which comprises a memory and a processor, wherein the memory is stored with computer program instructions, and the computer program instructions are executed by the processor to realize the liquid crystal substrate glass warp measuring method.
The third aspect of the invention provides a liquid crystal substrate glass warp degree measuring device, which is provided with a liquid crystal substrate glass warp degree measuring system. .
Through the technical scheme, the three-dimensional zero plane III parallel to the zero plane I is established based on the three-dimensional coordinate information of the zero plane I, and the mechanical error brought by the marble bearing platform of the measuring device can be solved by planning the measuring lens to run according to the track of the zero plane III, so that the measuring result is more accurate.
The distance from the zero plane III is calculated by collecting the coordinate information of the sampling point of the measured sample piece in real time, and the difference between the maximum distance and the minimum distance is calculated in real time, so that the warping degree value of the measured sample piece can be output in real time, and the measurement efficiency is improved.
Additional features and advantages of embodiments of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the embodiments of the invention without limiting the embodiments of the invention. The deformation of the zero plane I is illustrated in the drawings to more clearly illustrate the mechanical deformation of the marble slab and does not represent the true deformation of the marble slab, as shown in the drawings. In the drawings:
FIG. 1 is a schematic view of a prior art measurement system measuring mechanical errors;
FIG. 2 is a three-dimensional spatial relationship diagram of a zero plane I and a zero plane II of a conventional measurement system;
fig. 3 is a relationship diagram of a mechanical coordinate and a relative coordinate of a method for measuring a glass warp of a liquid crystal substrate according to an embodiment of the present invention;
fig. 4 is a vertical coordinate relationship diagram of a zero plane III and a zero plane I of a method for measuring glass warp of a liquid crystal substrate according to an embodiment of the present invention;
fig. 5 is a vertical coordinate relationship diagram of a measured sample wafer, a zero plane III and a zero plane I in the method for measuring the glass warp of the liquid crystal substrate according to an embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
FIG. 1 is a schematic diagram of a prior art measurement system for measuring mechanical errors. Since the warp value is the distance between two points that are farthest from the plane of the sample to be measured in the height direction, if the sample to be measured is an absolute plane, the warp is 0. As shown in fig. 1, because the marble bearing platform has mechanical errors and a non-ideal horizontal two-dimensional plane surface, when the warpage value of the liquid crystal substrate glass sample is measured, the sample is placed on the marble bearing platform and is attached to the marble bearing platform, and the sample and the marble bearing platform have the same deformation, so that the mechanical errors of the marble bearing platform are introduced when the warpage value of the liquid crystal substrate glass sample is measured.
Fig. 2 is a three-dimensional spatial relationship diagram of a zero plane I and a zero plane II of a conventional measurement system. The zero plane I is the surface of a working area of the marble bearing table of the measuring device. The zero plane II is a track plane formed by the movement of the lens in the measuring area range in the range of the depth of field H millimeter of the lens, and the zero plane II is a horizontal plane, wherein H is more than 0 millimeter. The measuring area is defined in the working area, and the size and the position of the measuring area are determined by the size and the position of the sample wafer placed on the zero surface I.
The mechanical origin of the measuring device is used as a mechanical zero point, and a mechanical coordinate system (x, y, z) is formed by combining the long axis and the short axis, and is the corresponding relation of a zero plane I and a zero plane II in the mechanical coordinate system as shown in FIG. 2. As shown in FIG. 2 (A) and FIG. 2 (B), the coordinates of the starting point of the zero plane I at the lower left corner of the mechanical coordinate system are (a, B, f), and the coordinates of the starting point of the zero plane II at the lower left corner of the mechanical coordinate system are (c, d, f), wherein c is greater than or equal to a, d is greater than or equal to B, and f is greater than or equal to 0.
Fig. 3 is a relationship diagram of a mechanical coordinate and a relative coordinate of a method for measuring glass warp of a liquid crystal substrate according to an embodiment of the present invention. As shown in fig. 3, a first coordinate system is established with the coordinates (a, b, f) of the starting point of the zero plane I at the lower left corner in the mechanical coordinate system as a relative origin, and the first coordinate system is a relative coordinate system. And establishing a second coordinate system by taking the coordinates (c, d, f) of the starting point of the lower left corner of the zero plane II in the mechanical coordinate system as a relative origin, wherein the second coordinate system is a relative coordinate system. The first coordinate system is represented by (X1, Y1, Z1), and the second coordinate system is represented by (X, Y, Z). The first coordinate system is a measurement coordinate system when acquiring a zero plane I three-dimensional coordinate, and the second coordinate system is a measurement coordinate system when measuring the warping degree of the sample to be measured.
As shown in fig. 3, the positional relationship of the first coordinate system in the mechanical coordinate system satisfies equation (1). And the position relation of the second coordinate system in the mechanical coordinate system satisfies the formula (2). The coordinate point corresponding relation between the first coordinate system and the second coordinate system can be calculated by the formulas (1) and (2), as shown in the formula (3).
(x1,y1,z1)＝(x-a,y-b,z-f) (1)
(X,Y,Z)＝(x-c,y-d,z-f) (2)
(X,Y,Z)＝(x1-c+a,y1-d+b,z1) (3)
Wherein c is more than or equal to a, d is more than or equal to b, and f is more than or equal to 0.
Fig. 4 is a vertical coordinate relationship diagram of a zero plane III and a zero plane I of a method for measuring glass warp of a liquid crystal substrate according to an embodiment of the present invention. The zero plane III is a trajectory plane corrected by the zero plane II based on the deformation of the zero plane I provided in this embodiment, and the zero plane III is within the range of the lens depth of field H mm. And the zero plane III is parallel to the zero plane I, namely, the distance from any point of the zero plane III to the zero plane I is equal.
The method for correcting the zero plane II based on the deformation of the zero plane I comprises the following steps:
the measuring system takes a first coordinate system (x 1, y1, z 1) as a measuring coordinate, scans a complete three-dimensional space coordinate of a zero plane I and stores the complete three-dimensional space coordinate in the measuring system;
according to the complete three-dimensional space coordinate of the zero plane I in the first coordinate system and the corresponding relation of the coordinate points of the first coordinate system and the second coordinate system in the formula (3), the complete coordinate of the zero plane I in the second coordinate system can be deduced;
in the second coordinate system due toAfter correction, the zero plane III and the zero plane I are completely parallel, that is, the distances W from any point on the zero plane III to the zero plane I are equal and are all e mm. Therefore, the complete coordinate of the zero plane I in the second coordinate system is increased by e mm in the Z-axis direction of the second coordinate system, and the coordinate of the zero plane III in the second coordinate system can be obtained, wherein the coordinate of the zero plane III in the second coordinate system is expressed as (X) III ,Y III ,Z III ) Said (X) III ,Y III ,Z III ) Coordinates (x 1, y1, z 1) in the first coordinate system with the zero plane I satisfy the following formula (4), wherein e>0 mm.
(X III ,Y III ,Z III )＝(x1-c+a,y1-d+b,z1+e) (4)
As shown in fig. 4, the corresponding relationship between the corrected zero plane III and the corrected zero plane I in the second coordinate system is completely parallel, the second coordinate system is used as a measurement coordinate during measurement, and the measurement lens runs along the three-dimensional coordinate track of the zero plane III, so that the mechanical error caused by the zero plane I can be eliminated, and the measurement result is more accurate.
Optionally, after the measuring device is used for a period of time, in order to prevent new mechanical errors from being introduced during the use of the marble platform of the measuring device, the first coordinate system (x 1, y1, z 1) can be used as the measuring coordinate again, and the complete three-dimensional space coordinate of the scanning zero plane I can be updated to the measuring system.
Fig. 5 is a vertical coordinate relationship diagram of a measured sample wafer, a zero plane III and a zero plane I in the method for measuring the glass warp of the liquid crystal substrate according to an embodiment of the present invention. As shown in fig. 5, the sample to be measured is placed on the zero plane I, and the sample is attached to the zero plane I to generate the same deformation as the zero plane I. And during measurement, establishing the second coordinate system (X, Y, Z) as a measurement coordinate system according to the size of the sample, obtaining the coordinate of the zero plane III of the running track of the measuring lens according to the complete coordinate information of the zero plane I in the first coordinate system stored in the measurement system and the formula (4), and running the measuring lens according to the coordinate position of the zero plane III during measurement.
As shown in fig. 5 (a), when the warpage value of the sample to be measured is 0 (absolute plane), the sample to be measured can be completely attached to the zero plane I, and at this time, any point on the sample to be measured and zero pointAnd the distances of the corresponding points of the surface III in the Z-axis coordinate direction are equal. As shown in fig. 5 (a), the distance Wi = W j = e, from which the maximum distance W can be known max = e, minimum distance W min = e, warp value W = W max -W min ＝0。
As shown in fig. 5B, when the sample piece warp value is not 0 (non-absolute plane), the deformed portion of the sample piece cannot completely fit with the zero plane I, and the distance W between the sampling point at the warp deformation position of the sample piece and the corresponding point of the zero plane III in the Z-axis coordinate direction is set to be smaller than the distance W between the sampling point and the corresponding point of the zero plane III i . The distance W between the sampling point at the position of the tested sample piece without warping deformation and the corresponding point of the zero plane III in the Z-axis coordinate direction j . As shown in fig. 5 (B), wi = o, W j = e, o ≠ e. From this, the maximum distance W is known max ＝W j = e, minimum distance W min Wi = o, warp value W = W max -W min ＝e-o。
Optionally, the method for measuring glass warpage of a liquid crystal substrate according to an embodiment of the present invention may store coordinates of sampling points during a sample collection process, and after the whole sample collection process is completed, calculate a vertical distance from the sampling point to a zero plane III through all the stored coordinates of the sampling points, obtain a maximum vertical distance and a minimum vertical distance, and then calculate a difference between the maximum vertical distance and the minimum vertical distance to obtain a warpage value.
Optionally, the method for measuring the glass warpage of the liquid crystal substrate provided by an embodiment of the invention can calculate the warpage value of the measured sample in real time. The method comprises the following steps:
establishing the second coordinate system (X, Y, Z) as a measurement coordinate system according to the position of the sample wafer;
the measuring system calculates the running track (namely, zero plane III) of the measuring lens in the second coordinate system (namely, the measuring coordinate system) according to the coordinate corresponding relation formula (4) based on the complete coordinate of the zero plane I in the first coordinate system (x 1, y1, z 1);
the measuring lens determines the running track according to the coordinate information of the zero plane III, and collects the coordinate information (X) of the measuring point of the measured sample in the measuring coordinate system i ,Y i ,Z i )；
According to the coordinates (X) of the sample point i ,Y i ,Z i ) Zero plane III coordinate (X) corresponding to the point III-i ,Y III-i ,Z III-i ) Calculating the distance W between two points i ＝Z III-i –Z i Wherein X is i ＝X III-i ，Y i ＝Y III-i ；
Defining the maximum distance from the sampling point to the zero plane III as W max Minimum distance is W min Comparing W corresponding to N sampling points of initial acquisition i The maximum distance and the minimum distance obtained by comparison are used as the maximum distance W max And a minimum distance W min ，W max Satisfies the following formula (5), W min And (3) calculating the warping degree value w of the measured area on the sample, wherein the warping degree value w satisfies the following formula (6): w = W max -W min Wherein N is more than or equal to 2;
W max ＝MAX{W 1 ,W 2, …,W N } (5)
W min ＝MIN{W 1 ,W 2, …,W N } (6)
picking up W corresponding to M sampling points in the subsequent acquisition process i Values and are each spaced from the maximum distance W max And a minimum distance W min Comparing, and updating the maximum value and the minimum value of the comparison to the maximum distance W max And a minimum distance W min ，W max Satisfies the following formula (7), W min And (3) calculating the warping degree value w of the measured area on the sample, wherein the warping degree value w satisfies the following formula (8): w = W max -W min The process is repeated until the sample measurement is completed, wherein M is more than or equal to 1.
W max ＝MAX{W max ,W 1 ,…,W M } (7)
W min ＝MIN{W min ,W 1 ,…,W M } (8)
Optionally, when the sample measurement is completed, the final calculated warpage value is the warpage value of the whole sample.
Optionally, when calculating the warping degree value of the measured area of the measured sample in real time, storing the maximum warping degree valueDistance W max And a minimum distance W min And coordinate information of the corresponding sample sampling point.
Optionally, in the sample measurement process, warp information of the measured region of the measured sample can be output in real time, where the information includes: warp value W and maximum distance W of measured area of measured sample max Minimum distance W min 、W max Corresponding sample point coordinate and W min And (4) coordinates of corresponding sample sampling points.
Optionally, a first warping degree threshold is preset, and when the calculated warping degree value of the measured area of the measured sample is greater than the first warping degree threshold, the warping degree information of the measured area of the measured sample is output.
Optionally, the first warp degree threshold is used to control a warp degree information output frequency.
Optionally, a second warping degree threshold is preset, and when the calculated warping degree value of the measured area of the measured sample is greater than the second warping degree threshold, the measurement of the warping degree of the measured sample is stopped.
Optionally, the second warpage threshold is an acceptable maximum warpage value, and before the measurement of the sample to be measured is completed, if the warpage value of the measured area calculated in real time is found to be greater than the second warpage threshold, it can be determined that the sample is seriously deformed and not compliant, the measurement can be stopped, so that the measurement efficiency is improved.
Optionally, in the Z coordinate data collecting method, the laser measuring lens operates according to a zero plane III measurement plan, and performs real-time sampling, and in the measuring process, a bundle of polychromatic light (white light) emitted by the light source generates spectral dispersion after passing through a series of optical lenses in the measuring lens, and a group of continuous focuses are formed in space due to different wavelengths of each monochromatic light. The monochromatic light focused on the surface of the measured object is reflected and then transmitted back to the monochromator in the controller through the optical fiber cable, so that the wavelength of the monochromatic light is determined, and each wavelength corresponds to one Z coordinate.
Optionally, during measurement, the measurement system picks up Z coordinate data of the sampling points at intervals of L millimeters in the X axis and Y axis directions, and calculates the warping degree value by using the coordinates of the picked sampling points, wherein L is greater than or equal to 1 millimeter, and preferably 10 millimeters.
Optionally, an embodiment of the present invention further provides a system for measuring a glass warp degree of a liquid crystal substrate, and the method for measuring a glass warp degree of a liquid crystal substrate is used in the system. The system comprises a memory and a processor, wherein computer program instructions are stored on the memory, and when being executed by the processor, the computer program instructions realize the liquid crystal substrate glass warpage measuring method.
Optionally, an embodiment of the present invention further provides a liquid crystal substrate glass warp degree measuring instrument, which is characterized in that the measuring instrument is provided with the liquid crystal substrate glass warp degree measuring system.
Those skilled in the art will appreciate that all or part of the steps in the method for implementing the above embodiments may be implemented by a program, which is stored in a storage medium and includes several instructions to enable a single chip, a chip, or a processor (processor) to execute all or part of the steps in the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, the embodiments of the present invention are not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the embodiments of the present invention within the technical idea of the embodiments of the present invention, and these simple modifications all belong to the protection scope of the embodiments of the present invention. It should be noted that the various features described in the foregoing embodiments may be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the embodiments of the present invention will not be described separately for the various possible combinations.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as disclosed in the embodiments of the present invention as long as it does not depart from the spirit of the embodiments of the present invention.
Claims (9)
1. The utility model provides a liquid crystal substrate glass warpage measuring method, is based on warpage measuring device, warpage measuring device includes load-bearing platform and laser measuring lens, its characterized in that, warpage measuring method includes:
a working area is defined on the bearing platform, and a measuring area is defined in the working area;
acquiring a three-dimensional coordinate of a working area surface, wherein the working area surface is a zero surface I;
determining the three-dimensional coordinate of a track surface of the movement of the measuring lens in the measuring area surface based on the three-dimensional coordinate of the zero surface I, wherein the track surface is a zero surface III; the zero plane III is parallel to the zero plane I in a three-dimensional space, and H is more than 0 mm within the range of H mm of the depth of field of the measuring lens;
in the sample measuring process, the planning measuring lens moves according to the three-dimensional coordinate point of the zero plane III, and the three-dimensional coordinates of the sampling point on the sample are collected in real time;
calculating the vertical distance from each sampling point to a zero plane III, and calculating the warping value of the sample wafer according to the vertical distance;
the three-dimensional coordinate of the track surface of the measuring lens moving on the measuring area surface is determined based on the three-dimensional coordinate of the zero surface I, the track surface is a zero surface III, and the method comprises the following steps:
establishing a mechanical coordinate system by taking a mechanical origin of the measuring device as a mechanical zero point;
establishing a first coordinate system and a second coordinate system by taking a mechanical coordinate system as a reference, wherein the first coordinate system and the second coordinate system are relative coordinate systems;
establishing a corresponding relation between the first coordinate system and the second coordinate system according to the positions of the first coordinate system and the second coordinate system in the mechanical coordinate system;
taking the first coordinate system as a measurement coordinate system, and acquiring a three-dimensional coordinate of a zero plane I in the first coordinate system;
calculating the three-dimensional coordinate of the zero plane I in a second coordinate system according to the three-dimensional coordinate of the zero plane I and the corresponding relation between the first coordinate system and the second coordinate system;
and e millimeters are added to all coordinate points of the zero plane I in the second coordinate system in the Z-axis direction, so that the three-dimensional coordinate of the zero plane III in the second coordinate system is obtained, wherein e is greater than 0 millimeter.
2. The warp measurement method of claim 1, wherein the correspondence of the mechanical coordinate system, the first coordinate system, and the second coordinate system comprises:
defining the mechanical coordinate system as (X, Y, Z), defining a first coordinate system as (X1, Y1, Z1), defining a second coordinate system as (X, Y, Z), and defining the first coordinate system and the mechanical coordinate system to have a corresponding relation: (x 1, y1, z 1) = (x-a, y-b, z-f),
the corresponding relation between the second coordinate system and the mechanical coordinate system is (X, Y, Z) = (X-c, Y-d, Z-f);
calculating the corresponding relation between the first coordinate system and the second coordinate system according to the corresponding relation between the first coordinate system and the mechanical coordinate system and the corresponding relation between the second coordinate system and the mechanical coordinate system: (X, Y, Z) = (X1-c + a, Y1-d + b, Z1);
calculating the corresponding relation between the three-dimensional coordinate of the zero plane III in the second coordinate system and the three-dimensional coordinate of the zero plane I in the first coordinate system as follows: (X) III ,Y III ,Z III )＝(x1-c+a,y1-d+b,z1+e)；
Wherein c is more than or equal to a, d is more than or equal to b, and f is more than or equal to 0.
3. The warpage measuring method according to claim 2, wherein the step of collecting the three-dimensional coordinates of the sampling points on the sample in real time by moving the planning measuring lens according to the three-dimensional coordinate points of the zero plane III comprises:
in the process that the measuring lens moves according to the three-dimensional coordinate point of the zero plane III, the three-dimensional coordinates of the sampling point on the sample wafer are picked up by taking a second coordinate system as a measuring coordinate system and respectively taking an X axis and a Y axis L millimeter as intervals;
the method for calculating the vertical distance from each sampling point to the zero plane III comprises the following steps:
for each sampling point, calculating the distance W between the sampling point and the corresponding point in the Z-axis direction according to the three-dimensional coordinates of the sampling point and the three-dimensional coordinates of the corresponding point of the zero plane III i Wherein L is more than or equal to 1 mm.
4. The method of claim 3, wherein calculating the warp value of the sample wafer based on the vertical distance comprises:
after the sample wafer is measured, calculating the warping degree value of the sample wafer according to the vertical distances from all sampling points on the sample wafer to a zero plane III; or
And in the sample measurement process, calculating the warping degree value of the measured area on the sample in real time according to the vertical distance from the sampling point in the measured area on the sample to the zero plane III, and taking the warping degree value calculated when the sample measurement is finished as the warping degree value of the sample.
5. The method for measuring warpage according to claim 4, wherein in the process of measuring the sample, the warpage value of the measured area on the sample is calculated in real time according to the vertical distance from the sampling point in the measured area to the zero plane III, and the method comprises the following steps:
defining the maximum distance W from the sample to the zero plane III max And a minimum distance W min ；
Collecting the three-dimensional coordinates of the sampling point in the second coordinate system in real time, and calculating the vertical distance W from the sampling point to the zero plane III according to the three-dimensional coordinates of the zero plane III corresponding to the sampling point in the second coordinate system i ；
Comparing W corresponding to N sampling points of initial acquisition i Value N of W i The maximum and minimum values of the values are used as the maximum distance W max And a minimum distance W min And calculating the warping degree value w of the measured area on the sample: w = W max -W min (ii) a Wherein N is more than or equal to 2;
in the subsequent acquisition process, picking up W corresponding to M sampling points each time i Value of W i The values are respectively separated from the maximum distance W max And a minimum distance W min ComparisonUpdating the maximum and minimum values obtained by comparison to the maximum distance W max And a minimum distance W min According to the updated maximum distance W max And a minimum distance W min Calculating the warping degree value w of the measured area on the sample: w = W max -W min Wherein M is more than or equal to 1;
the warp value that calculates when accomplishing the sample wafer measurement and obtains includes as the warp value of sample wafer:
and after the sample is measured, taking the warpage value w of the measured area obtained by the last calculation as the warpage value of the sample.
6. The warpage measuring method according to claim 5, further comprising:
outputting warp value information of a measured area on the sample in real time, wherein the warp value information comprises: warp value W and maximum distance W of measured area max Minimum distance W min And a maximum distance W max And a minimum distance W min Coordinate point information of the corresponding sampling point.
7. The method of measuring warp as claimed in any one of claims 1-6, further comprising: and updating the three-dimensional coordinate information of the zero plane I in real time.
8. A liquid crystal substrate glass warp measuring system, characterized in that the system comprises a memory and a processor, the memory stores computer program instructions, and the computer program instructions are executed by the processor to realize the liquid crystal substrate glass warp measuring method according to any one of claims 1 to 7.
9. A liquid crystal substrate glass warp measuring device, characterized in that, the measuring device is provided with the liquid crystal substrate glass warp measuring system of claim 8.
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