CN104851823B - X, the contactless silicon wafer warpage degree measuring apparatus of Y Dual-spindle linkeds - Google Patents
X, the contactless silicon wafer warpage degree measuring apparatus of Y Dual-spindle linkeds Download PDFInfo
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- CN104851823B CN104851823B CN201510157648.4A CN201510157648A CN104851823B CN 104851823 B CN104851823 B CN 104851823B CN 201510157648 A CN201510157648 A CN 201510157648A CN 104851823 B CN104851823 B CN 104851823B
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- sliding block
- wafer
- long guideway
- vacuum
- short lead
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
- G01B5/30—Measuring arrangements characterised by the use of mechanical techniques for measuring the deformation in a solid, e.g. mechanical strain gauge
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
A kind of contactless silicon wafer warpage degree measuring apparatus of X, Y Dual-spindle linked, mainly solve existing test equipment it is complicated, it is bulky and apply the inflexible problem of link.The equipment is mainly made up of long guideway, short lead rail, supporting plate, sliding block, sliding block A, laser measuring head and scale.A test module is just formed after the installation of above all parts, test module is placed on vacuum cavity.By three sliding blocks in mobile long guideway and two short lead rails, the movement and linkage of the X-axis, Y-axis both direction in test scope are realized.The positioning of any point in test scope is realized using scale, resetting or can be automatically moved and feedback position signal.Its is simple in construction, versatile, and the condition such as normal temperature, high temperature, vacuum, which can arbitrarily arrange in pairs or groups, uses and can be applicable the measurement of semicon industry silicon wafer warpage degree.It can be widely applied to semiconductor coated film technical field.
Description
Technical field
The present invention relates to one kind can not contact wafer, and X, Y Dual-spindle linked are surveyed to any point in test zone
Amount, movement simultaneously can be mainly used in semiconductor coated film industry silicon wafer warpage degree with scale with the measuring apparatus of resetting
Detection, belongs to semiconductive thin film deposition applications and preparing technical field.
Background technology
The state of wafer is vital in semiconductive thin film processing procedure, wafer be subjected in reaction chamber high temperature, vacuum,
The influences such as radiofrequency field necessarily have physical deformation, and the deflection of wafer is a very important data in technics institution, especially
It is the wafer in TSV industries, because of its special wafer processing mode, exists during silicon chip is bonded from sheet glass different
Caused stress etc. in air residual, bonding process when material thermal expansion coefficient, bonding so that the wafer of TSV industries is thin
Bigger warpage is had in film processing procedure.If the degree of silicon wafer warpage can not be grasped, the exploitation of film will be had a strong impact on.And show
Some test equipments are bulky, cost is higher.
The content of the invention
The present invention mainly solves in the prior art that test equipment is complicated, volume is huge for the purpose of solving the above problems
It is big and apply the inflexible problem of link, and provide a kind of simple in construction, versatile, the condition such as normal temperature, high temperature, vacuum can be with
Arbitrarily collocation uses and can be applicable the equipment that semicon industry silicon wafer warpage degree measures.
To achieve the above object, the present invention uses following technical proposals：X, the contactless silicon wafer warpage degree of Y Dual-spindle linkeds is surveyed
Measure equipment, including test module.The test module is mainly by long guideway, short lead rail, supporting plate, sliding block, sliding block A, Laser Measuring
Measure head and scale is formed.Above-mentioned long guideway is connected with two sliding blocks respectively by the screw at both ends.Two sliding blocks and two short-range missiles
Rail is a component, and two short lead rails are connected and fixed with supporting plate by screw.Supporting plate is vertical by screw and divide into two
Plate is fixed.Jackscrew is installed between the supporting plate and riser, for adjusting the horizontal plane of supporting plate.The long guideway, which is provided with, to be slided
Block A, sliding block A are fixed the fixed plate equipped with laser measuring head by screw.Above-mentioned sliding block A and long guideway, sliding block and short lead rail
Movement is realized using being slidably matched.Above-mentioned long guideway and short lead rail are connected with scale, play a part of positioning.Above all parts
Just a test module is formed after installation, test module is placed on vacuum cavity, transparent cover plate is using O-shaped rubber ring and very
Cavity body forms a confined space, is driven by aspiration pump and realizes vacuum, heating dish can the conduct under vacuum or atmospheric condition
The support platform of wafer, while can be that wafer heats.
Beneficial effects of the present invention and feature are：
The present invention is non-contact type measuring device, will not damage or pollute wafer, simple in construction, and reliability is high, versatility
By force, maintainability is good, and cost is cheap, and the disparate modules that can arrange in pairs or groups can quickly realize the conversion of measurement function, can realize respectively often
These four different measuring environment patterns of normal temperature and pressure, high-temperature pressure, normal-temperature vacuum, high-temperature vacuum.X, Y twin shaft in test zone
Linkage, resetting or it can automatically move and feedback position signal.It can be widely applied to semiconductor coated film technical field.
Brief description of the drawings
Fig. 1 is the structural representation of basic module of the present invention.
Use state diagram when Fig. 2 is present invention work.
Fig. 3 is that Fig. 2 removes the use state diagram after transparent cover plate.
Fig. 4 is Fig. 2 longitudinal cross section.
Embodiment
Embodiment
The contactless silicon wafer warpage degree measuring apparatus of reference picture 1-4, X, Y Dual-spindle linked, including test module 13.The survey
Die trial block 13 is mainly made up of long guideway 5, short lead rail 2, supporting plate 1, sliding block 3, sliding block A10, laser measuring head 8 and scale 9.On
Long guideway 5 is stated to be connected with two sliding blocks 3 respectively by the screw 4 at both ends.Two sliding blocks 3 and two short lead rails 2 are a component, two
Individual short lead rail 2 is connected and fixed with supporting plate 1 by screw.Supporting plate 1 is fixed by screw with two risers 12 divided into.Institute
Installation jackscrew 11 between supporting plate 1 and riser 12 is stated, for adjusting the horizontal plane of supporting plate 1.The long guideway 5 is provided with sliding block
A10, sliding block A10 are fixed the fixed plate 7 equipped with laser measuring head 8 by screw 6.Above-mentioned sliding block A10 and long guideway 5, sliding block 3
With short lead rail 2 using the realization movement that is slidably matched.Above-mentioned long guideway 5 and short lead rail 2 are connected with scale 9, play a part of positioning.
A test module 13 is just formed after the installation of above all parts, test module 13 is placed on vacuum cavity 15, transparency cover
Plate 17 forms a confined space using O-shaped rubber ring 14 and vacuum cavity, is driven by aspiration pump and realizes vacuum, heating dish 16 can
Using the support platform under vacuum or atmospheric condition as wafer, while can be that wafer heats.
Fig. 4 is that the present invention makes when simulating full-scale condition and coordinating vacuum cavity 15, heating dish 16, transparent cover plate 17 to work
With view, and one of innovation point of the present invention.
Operating method：Wafer is placed in heating dish 16, test module 13 is placed on vacuum cavity 15, passes through movement
Three sliding blocks on long guideway 5 and two short lead rails 2, realize movement and the connection of X-axis, Y-axis both direction in test scope
It is dynamic.The positioning of any point in test scope, and repetitive positioning accuracy are realized furthermore with scale 9, will be supported using jackscrew 11
The Level-adjusting of plate 1 unanimously, passes through the change that laser measuring head 8 measures wafer any point or a line Z axis to heating dish 16
Change, the configuration of surface and warpage degree of wafer are gone out by the collection to measurement data and finishing analysis.Measurement now both can be with
Realize that normal pressure and temperature state can also provide heat by heating dish 16, be changed into constant-pressure and high-temperature state.When transparent cover plate 17 detain as
When on vacuum cavity 15, there are aspiration pump and O-shaped rubber ring 14 to realize vacuum state, can now realize the normal temperature under vacuum state
Measurement and high temperature measurement state.
Claims (2)
1. a kind of contactless silicon wafer warpage degree measuring apparatus of X, Y Dual-spindle linked, including test module, it is characterised in that：It is described
Test module is mainly made up of long guideway, short lead rail, supporting plate, sliding block, sliding block A, laser measuring head and scale, above-mentioned long guideway
It is connected respectively with two sliding blocks by the screw at both ends, two sliding blocks and two short lead rails are a component；Above-mentioned two short lead rail
It is connected and fixes with supporting plate by screw, supporting plate is fixed by screw with two risers divided into；The supporting plate and vertical
Jackscrew is installed between plate；The long guideway is provided with sliding block A, and sliding block A is consolidated the fixed plate equipped with laser measuring head by screw
It is fixed；Above-mentioned sliding block A and long guideway, sliding block are used with short lead rail and are slidably matched；Above-mentioned long guideway and short lead rail are connected with scale, with
A test module is just formed after upper all parts installation, test module is placed on vacuum cavity, transparent cover plate utilizes O-shaped
Rubber ring forms a confined space with vacuum cavity, is driven by aspiration pump and realizes vacuum, heating dish is in vacuum or atmospheric condition
The lower support platform as wafer, heated for wafer.
2. the operating method of the application contactless silicon wafer warpage degree measuring apparatus of X, Y Dual-spindle linked as claimed in claim 1, its
It is characterised by：Wafer is placed in heating dish, test module is placed on vacuum cavity, by mobile long guideway and two short
Three sliding blocks on guide rail, the movement and linkage of the X-axis, Y-axis both direction in test scope are realized, realized using scale
The positioning of any point and repetitive positioning accuracy in test scope, using jackscrew by the Level-adjusting of supporting plate to heating dish one
Cause, the conversion of wafer any point or a line Z axis is measured by laser measuring head, pass through the collection to measurement data and arrangement point
The configuration of surface and warpage degree of wafer are separated out, measurement now can realize normal pressure and temperature state or be carried by heating dish
Heating load, it is changed into constant-pressure and high-temperature state, when transparent cover plate button is as on vacuum cavity, has aspiration pump and O-shaped rubber ring to realize
Vacuum state, now realize normal temperature measurement and high temperature measurement state under vacuum state.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510157648.4A CN104851823B (en) | 2015-04-03 | 2015-04-03 | X, the contactless silicon wafer warpage degree measuring apparatus of Y Dual-spindle linkeds |
| PCT/CN2015/084422 WO2016155151A1 (en) | 2015-04-03 | 2015-07-20 | X and y double-axis linkage non-contact wafer warping degree measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510157648.4A CN104851823B (en) | 2015-04-03 | 2015-04-03 | X, the contactless silicon wafer warpage degree measuring apparatus of Y Dual-spindle linkeds |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104851823A CN104851823A (en) | 2015-08-19 |
| CN104851823B true CN104851823B (en) | 2018-03-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510157648.4A Active CN104851823B (en) | 2015-04-03 | 2015-04-03 | X, the contactless silicon wafer warpage degree measuring apparatus of Y Dual-spindle linkeds |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104851823B (en) |
| WO (1) | WO2016155151A1 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105021099B (en) * | 2015-07-16 | 2018-04-03 | 北京工业大学 | A kind of large scale is ground silicon wafer warpage measured material |
| CN105789083B (en) * | 2016-05-27 | 2019-02-01 | 中南大学 | A kind of optical waveguide crystal column surface detection device |
| JP6738661B2 (en) * | 2016-06-16 | 2020-08-12 | 株式会社ミツトヨ | Industrial machinery |
| CN107478171B (en) * | 2017-08-31 | 2019-10-18 | 长江存储科技有限责任公司 | A kind of monitoring method and monitoring device of buckling deformations |
| CN109411381A (en) * | 2018-10-15 | 2019-03-01 | 德淮半导体有限公司 | Focusing method and wafer detecting apparatus in wafer characterization processes |
| CN109373923A (en) * | 2018-11-30 | 2019-02-22 | 中国矿业大学(北京) | A kind of monitoring system and method for mining tunnel surrouding rock deformation |
| CN111307058A (en) * | 2020-03-20 | 2020-06-19 | 华天慧创科技（西安）有限公司 | Non-contact warping degree measuring jig and measuring method |
| CN112864071B (en) * | 2021-01-18 | 2022-04-01 | 长鑫存储技术有限公司 | Tool and method for correcting wafer position in semiconductor manufacturing machine |
| CN113155023B (en) * | 2021-04-02 | 2023-02-07 | 甘肃旭盛显示科技有限公司 | Method and system for measuring glass warping degree of liquid crystal substrate |
| CN113206019B (en) * | 2021-04-08 | 2022-10-21 | 北京北方华创微电子装备有限公司 | Device and method for detecting warping degree of wafer |
| CN117889773B (en) * | 2024-03-15 | 2024-05-14 | 深圳市铨兴科技有限公司 | Wafer warp deformation test equipment |
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| CN101169337A (en) * | 2006-10-24 | 2008-04-30 | 缪朝晖 | LED measuring instrument |
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| WO2013182880A2 (en) * | 2012-06-07 | 2013-12-12 | Soitec | Deposition systems having deposition chambers configured for in-situ metrology with radiation deflection and related methods |
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| JP4253610B2 (en) * | 2004-04-09 | 2009-04-15 | 株式会社日立ハイテクノロジーズ | Electron beam inspection equipment |
| CN101442018B (en) * | 2007-11-21 | 2010-11-03 | 中芯国际集成电路制造(上海)有限公司 | Detection method for silicon wafer warpage degree |
| US7957118B2 (en) * | 2009-04-30 | 2011-06-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-zone electrostatic chuck and chucking method |
| CN102931117A (en) * | 2012-11-21 | 2013-02-13 | 苏州矽科信息科技有限公司 | Method for measuring deformation in wafer transmission by using principle of light reflection |
| CN103925886A (en) * | 2013-01-15 | 2014-07-16 | 中芯国际集成电路制造(上海)有限公司 | Wafer deformation detection system and method |
| CN104142128B (en) * | 2014-06-25 | 2016-09-14 | 上海功源自动化技术有限公司 | A kind of measuring method of silicon wafer warpage degree |
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2015
- 2015-04-03 CN CN201510157648.4A patent/CN104851823B/en active Active
- 2015-07-20 WO PCT/CN2015/084422 patent/WO2016155151A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101169337A (en) * | 2006-10-24 | 2008-04-30 | 缪朝晖 | LED measuring instrument |
| CN101207058A (en) * | 2006-12-20 | 2008-06-25 | 株式会社迪思科 | Chip measuring device and laser processing machine |
| CN101299125A (en) * | 2008-07-03 | 2008-11-05 | 塔工程有限公司 | Array tester |
| WO2013182880A2 (en) * | 2012-06-07 | 2013-12-12 | Soitec | Deposition systems having deposition chambers configured for in-situ metrology with radiation deflection and related methods |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016155151A1 (en) | 2016-10-06 |
| CN104851823A (en) | 2015-08-19 |
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Address after: No.900 Shuijia, Hunnan District, Shenyang City, Liaoning Province Patentee after: Tuojing Technology Co.,Ltd. Address before: 110179 3rd floor, No.1-1 Xinyuan street, Hunnan New District, Shenyang City, Liaoning Province Patentee before: PIOTECH Co.,Ltd. |
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