CN1146073A - Structure and production of silicone semiconductor diode and chip and their insulator - Google Patents
Structure and production of silicone semiconductor diode and chip and their insulator Download PDFInfo
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- CN1146073A CN1146073A CN95116287A CN95116287A CN1146073A CN 1146073 A CN1146073 A CN 1146073A CN 95116287 A CN95116287 A CN 95116287A CN 95116287 A CN95116287 A CN 95116287A CN 1146073 A CN1146073 A CN 1146073A
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- stamen
- stamen sheet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Abstract
The connected diode insulator component is suitable for the mass prodn and assembly of devices and modules. Each unit in the component is provided with one or several chip mounts, on which diode chips are binded with binder. The said method can produce diodes with excellent property massively and in low cost. The chip of diode and module and the insulator of the present invention have directly-combined structure with chip and insulator being main structure parts.
Description
The present invention relates to a kind of silicon semiconductor diode element, particularly a kind of simple in structure, make to be easy to the structure of silicon semiconductor diode element and assembly thereof, and provide the manufacture method of the novelty that cooperates this kind structure.Structure of the present invention and manufacture method thereof also are applicable to that the stamen sheet is other two polar electrnic components and circuit units of sheet shape.
In electronics industry, silicon semiconductor diode (Silicon Semiconductor Diode) is the huge active element of a kind of quantity required.Therefore yet, how to design that a kind of more high efficiency is produced in a large number and the diode that reduces cost becomes the target that an industrial circle is needed pursuit badly because diode applications is extensive, use amount is big.
In the design and manufacture method of conventional silicon semiconductor diode, the stamen sheet is all combined in advance with electric-conductor.And the combining structure of insulation trunk and stamen sheet-electric-conductor can be divided three major types:
1) the insulation trunk adopts discrete part form in addition:
The example of reality comprises: metal can type encapsulation (Metal Can Package), a sealing by fusing type encapsulation of glass tube secondary sealing by fusing type encapsulation (Glass Tube Two Step Seals Package) and glass tube (Glass Tube-Double Plug Simutaneons Seal Package) etc.This type of encapsulation the insulation trunk spare directly do not do structural combination with the stamen sheet, but with the electric-conductor textural association.
2) use type film is with trunk raw material casting mold and make the insulation trunk in addition:
In this kind method for making, combination half product of its stamen sheet and electric-conductor is embedded among the type film, and the trunk of making in the casting mold mode then is encapsulated on this half product.The material that the casting mold trunk is suitable for is generally thermosetting resin, and other need the more excellent material of higher temperatures or high-voltage construction, as pottery or glass fiber-reinforced resin etc., then can't adopt because of the heatproof of its half product and the restriction of mechanical strength.
3) trunk that will insulate is wrapped up in and is applied on half product that electric-conductor and stamen sheet form and the former:
As irritate the trunk of casting type with aqueous resin; Wrap up in the ball-type trunk (Class Beaded Rectifier) that is coated with and makes through the vitrifying sintering with the agent of glass dust slurry; Conformal powdered resin hot melt applies the coating trunk that (Conformal Epoxy Powder Coating) makes.Wherein the sphere sealing trunk that burns till of glass has high performance, yet this trunk encapsulation needs to prepare two molybdenum matter or tungsten matter or other thermal coefficient of expansions and silicon in stamen sheet two ends in the mode of high temperature braze and passivation glass is close and the tool height conducts electricity, the made electrode of alloy of heat conductivility, to constitute the beading position.
In above-mentioned three kinds of modes, with glass dust slurry wrap up in be coated with and insulator performance that sintering processing is made higher, but the part of this kind structure and cost are all high.All can't obtain the higher goods of performance as for all the other modes.
At last, the part of loose mail form is adopted in conventional design more, needs to use multiple kinds of molds, can't be increasingly automated, and cost also is difficult for reducing, and these are common drawback of prior art.
The present invention's purpose is to provide structure and the method for making method thereof of a kind of silicon semiconductor diode stamen sheet with insulation trunk member, and this structure and method can be used and can't material processed make trunk on half product.
The present invention's purpose also is to provide a kind of structure and manufacture method thereof that realizes silicon semiconductor diode stamen sheet with the insulation trunk member of high efficiency industrialized production.
The present invention's purpose also provides the structure and the manufacture method thereof of a kind of silicon semiconductor diode stamen sheet and insulation trunk member, this structure can be easy to finish the book jacket technology of stamen sheet tangent plane when being connected stamen sheet and insulation trunk main components with method, thereby the tangent plane of having simplified the stamen sheet applies operation.
The present invention's purpose also is to provide structure and the manufacture method of a kind of silicon semiconductor diode stamen sheet with insulation trunk member; this structure and method can make the P-N knot otch of stamen sheet obtain preferable protection in follow-up every technical process, thereby make manufactured goods that better performance be arranged.
Find through the inventor, utilize a kind of diode insulation trunk member that links type, each unit preparation one or one group of mount pad on it, and with binding material with diode stamen sheet book jacket and be fixed in the mount pad, can make and be suitable for producing in a large number and closing the diode stamen sheet and insulation trunk member that uses in assembling.Utilize this kind diode stamen sheet and insulation trunk member can obtain good structure, and can reduce manufacturing, assembly cost, be suitable for automation and produce in a large number, and can be made into the diode of function admirable with assembling diode element or assembly.
Member according to silicon semiconductor diode stamen sheet provided by the present invention and insulation trunk is a kind of a kind of structure that directly is combined as feature with stamen sheet and insulation trunk main components.Different fully with known all kinds of designs and manufacture method.Its feature is as follows:
1) independent preparation insulation trunk main components, so, then efficient is higher, cost is lower, and can adopt the material made under stamen sheet and the unaffordable processing conditions of conductor (as high pottery of alumina content or glass fiber-reinforced resin etc.) to make.
2) become a kind of half product structure by binding material stamen sheet and insulation trunk main components are bonding, can finish the coating processes of stamen sheet tangent plane synchronously.
3) can properly separate the positive and negative electrode of stamen sheet, help every subsequent handling.
4) shape of design insulation trunk main components suitably is made into stripe shape or large stretch of type connecting piece form, and suitable automation is produced in a large number.
5) the trunk primary structure that will insulate is made and is tubularly become complete trunk spare, and then simplifies the manufacturing of diode significantly.
6) the trunk main components that will insulate is made sheet shape, then can adopt other sheet shape part, makes good encapsulation with high efficiency lamination process.
Manufacture method of the present invention not only is applicable to semiconductor diode element and assembly, also can be widely used in other various stamen sheets two polar electrnic components and circuit unit in the form of sheets.
Above-mentioned and other purpose of the present invention and characteristics, can be by following with reference to the description of the drawings and more clear:
Fig. 1 represents the front view of the structure of silicon semiconductor diode stamen sheet of the present invention and insulation trunk member.
Fig. 2 represents along the sectional view of A-A line among Fig. 1.
Fig. 3 represents the flow chart of silicon semiconductor diode manufacturing method one embodiment of the present invention.
Fig. 4 is applied in the front view of the silicon semiconductor diode element of plug-in unit pin terminal type silicon rectifier diode for the present invention.
Fig. 5 is the sectional view along B-B line among Fig. 4.
Fig. 6 represents a kind of sectional view of plug-in unit pin terminal type silicon rectifier diode finished product.
Fig. 7 is applied in the front view of the silicon semiconductor diode element of surface adhesion type silicon rectifier diode for the present invention.
Fig. 8 is the sectional view along C-C line among Fig. 7.
Fig. 9 shows the surface adhesion type silicon rectifier diode made from silicon semiconductor diode stamen sheet of the present invention and insulation trunk member.
Figure 10 represents that the present invention is applied in the structure chart of the silicon semiconductor diode element of aluminium porcelain plate sheet N-type semiconductor N diode.
Figure 11 represents the aluminium porcelain plate sheet N-type semiconductor N diode that utilizes this case method to make.
Figure 12 represents to utilize the assembly assumption diagram of the semiconductor diode element that mode of the present invention obtains.
Fig. 1 represents the front view of silicon semiconductor diode stamen sheet of the present invention and insulation trunk element structure, and Fig. 2 is its sectional view along the A-A line.
As shown in the figure, Si semiconductor pipe stamen sheet of the present invention has insulation trunk main components (1), a silicon semiconductor diode stamen sheet (3) and a binding material (2) with insulation trunk member.
The used semiconductor diode stamen sheet of the present invention comprises:
(1) through stamen sheet separation cuts (Chip Seperation) and make P-N knot exposed (OpenJunction) and through the diode stamen sheet of chemical polishing and oxidation processes (Chemical Polish and OxidationTreatment).
(2) the diode stamen sheet (Junction CoatedChip) of P-N knot protection coating.
And aspect the insulation trunk, can select for use suitable material to make its insulation trunk main components (Main Insulation Body Part).Prepared stamen sheet mount pad (ChipMounting Site (s)) on this structural member, mount pad has adhesive surface (Bonding Surface).Between the section of stamen sheet and this adhesive surface with the binding material bonding after, the positive and negative electrode position of stamen sheet (Positve and Negative Electrods) is not covered by binding material, and is formed with the open space (Open Space) that can hold electrical fitting (Conducting Parts) installation.
Usually, aluminium porcelain plate and glass fiber-reinforced resin plate are two kinds of materials that are suitable for insulation trunk of the present invention.
In one embodiment of the invention, the insulation trunk is the connecting piece form, can prepare a plurality of elements or assembly unit thereon, with standby.
Between the adhesive surface of binding material (Bonding Material) aspect stamen sheet section and stamen sheet mount pad, be used for the stamen sheet is bonded together in stamen sheet mount pad.
The situation of the stamen sheet that applies without the P-N knot is installed as if novel structure provided by the present invention being applied to bond, and binding material promptly can be used as P-N knot coating material (JunctionCoating Material).
Used binding material can be any suitable material in the embodiments of the invention.For example the passivation glass powder is a kind of suitable material.
The method for making of silicon semiconductor diode element of the present invention below is described.
Fig. 3 represents to be applicable to the flow chart of silicon semiconductor diode manufacturing method of the present invention.
In step (101), more than one yuan of insulation trunk connecting piece (1) that links form of preparation earlier.Usually, ceramic substrate or fiber glass plates are suitable insulation trunk material.In step (102), go up preparation mount pad (1a) at substrate (1).That is, on substrate (1), make circular hole, bellmouth or the square opening that size is fit to.Stamen sheet (3) is previously prepared.Can utilize the truncated cone stamen sheet of sandblast excision forming, or with the square stamen sheet of stamen blade saw cutting forming, and standby after preliminary treatment such as chemical polishing and oxidation.In step (103), utilize the location shaping tool that binding material (2) is put on the mount pad (1a), and after binding material (2) pre-setting, remove orientation tool in step (104).Binding material (2) can be that passivation glass, adhesive glass (being applicable to ceramic substrate) or resin type P-N knot apply agent (being applicable to fibre base plate).
Utilize proper method stamen sheet (3) to be inserted among the positioning seat in step (105).One of feasible practice is to insert with vaccum suction pipe.
In another embodiment of the present invention, in step (103) with stamen sheet (3) soft soldering on the terminal guiding element, in step (104) stamen sheet (3) is positioned to apply binding material (2) in step (105) again in the positioning seat (1a).
In further embodiment of this invention, positioning seat (1a) is made bellmouth, and one end opening diameter is greater than the diameter of stamen sheet (3), and other end opening diameter is then less than the diameter of stamen sheet (3).So can make the location more accurate.
Do heat treatment at the assembly that step (106) is finished (105).For the resin type binding material is that binding material is solidified; As be passivation glass, then with glass sintering.The passivation that this step is also finished stamen sheet (3) P-N knot simultaneously applies and bonding installation.In step (107),, finish electrical connection in stamen sheet two ends mounting terminal.If any necessity of other encapsulation, encapsulation, then finish this technology in step (108).
Because stamen sheet (3) is to be installed together with insulation trunk (1) bonding of making coupling member earlier, procedure thereafter can be processed on this fixture.Therefore can reduce the requirement of various working conditions, be fit to a large amount of automated productions, and improve qualification rate.
Below with the structure and the manufacture method of example explanation silicon semiconductor diode assembly of the present invention.
[embodiment 1]
The present invention is applied to the example of plug-in unit pin terminal type silicon rectifier diode (Insertion Pin TypeSilicon-Rectifier):
Fig. 4 is applied in the front view of the silicon semiconductor diode element in the plug-in unit pin terminal type silicon rectifier diode for the present invention; Fig. 5 is its sectional view along the B-B line.Followingly its structure and manufacturing process are described with reference to Fig. 4 and Fig. 5.
1) stamen sheet (3): the truncated cone stamen sheet (Round Mesa Shaped Chip) that adopts sandblast cutting (Sand Blasting Chip Cut) moulding.The stamen sheet is earlier through chemical polishing and oxidation processes, with to be installed.
2) insulation trunk main components (1): adopt the porcelain plate (HighAlumina Ceramic Plate) of high alumina content, prepare the ditch (Per-Scored) that cuts out in advance, form the connecting piece (Connected Parts) of a plurality of cells.Fig. 4 is for showing the front view of its single unit, and Fig. 5 is its sectional view.Each cell prepares a through hole (Through Hole) type stamen sheet mount pad.Shown in Fig. 4,5.
3) binding material (2): adopt Si semiconductor passivation glass powder (Passivation GlassPowder).It is standby to be modulated into pasty state with pure water.
4) pasty state glass dust quantitatively is applied on the hole wall of stamen sheet mount pad (1a) with special instrument (the post pin of for example finalizing the design), again stamen sheet (3) is placed in the hole, section is contacted with pasty state glass dust.The porcelain plate (1) of finishing the installation of stamen sheet is sent into the electric furnace heating, with sintered glass, finish the passivation and the coating (Passivation and Coating) of stamen sheet P-N knot simultaneously, and the bonding of stamen sheet is installed.
5) carry out operations such as follow-up terminal installation, electrical connection, external insulation layer encapsulation and make finished product.
Fig. 6 is a kind of sectional view of plug-in unit pin terminal type silicon rectifier diode finished product.The open space of managing (3) in silicon semiconductor diode stamen sheet of being finished by above-mentioned (1)-(4) step and two inspections of insulation trunk member imposes scolding tin (5) in a suitable manner, after electric-conductor and plug-in unit pin terminal component (4) connected thereon and covering, promptly become a kind of diode element finished product of suitable plug-in unit processing with insulating resin (6).
[embodiment 2]
The present invention is applied to the example of surface adhesion type silicon rectifier diode (SMD Type Silicon Rec-tifier):
Fig. 7 is applied in the front view of the silicon semiconductor diode element of surface adhesion type silicon rectifier diode for the present invention; Fig. 8 is its sectional view along the C-C line.Its structure and manufacturing process below are described.
1) stamen sheet (3): the square stamen sheet that adopts stamen blade saw (Dicing Saw) excision forming.Stamen sheet and guiding element frame (8) soft soldering are linked together, again through chemical polishing and oxidation processes, shown in Fig. 7,8.
2) insulation trunk main member (1): adopt glass fiber-reinforced resin plate material (Fiber Glass Reinforced Resin Plate) to be prepared into bar shaped or to open shape connecting piece form (Connec ted Parts) greatly, each diode is shaped on a through hole type stamen sheet mount pad, shown in Fig. 7,8.
3) binding material (2): adopt the P-N knot to apply agent (Junction Coating Resin) as siloxanes (Siloxane) etc.
4) the terminal guiding element that will be welded in stamen sheet (3) one ends penetrates the stamen film perforation (1a) of insulation trunk (6) main components (1), and stamen sheet (3) is positioned in the stamen film perforation (1a).Again P-N knot is applied agent and impose between stamen sheet (3) and the stamen film perforation (1a), and solidified (Cure).
5) with binding agent two side cover plates (8) are installed again at last, promptly finish silicon semiconductor diode element of the present invention.
Fig. 9 shows the surface adhesion type silicon rectifier diode assembly that silicon semiconductor diode assembly of the present invention is made.Its manufacture method is with the cover plate (9) (Cover Plates) of bonding agent (Adhesive) (6) by the upper and lower layer glass fibre resin sheet material matter of bonding on diode stamen sheet of finishing in (1)-(4) and the insulation trunk member, and is solidified.Terminal part (8) crimping that then will expose outside trunk forms terminal, promptly becomes a kind of silicon rectifier diode finished product that is suitable for as the surface adhesion element.
The diode made of mode promptly can carry out follow-up electrical parameters detection, cut off bulk-breaking according to this, divides operation such as grade packaged and makes the commercial size product.
[embodiment 3]
Aluminium porcelain plate sheet N-type semiconductor N diode:
Figure 10 represents that the present invention is applied in the structure chart of the silicon semiconductor diode element of aluminium porcelain plate sheet N-type semiconductor N diode.Its manufacturing process below is described.
1) stamen sheet (3) tangent plane polishing: at former two sides of stamen sheet (3) vacuum evaporated aluminium film, shielding plate is affixed on the surface of stamen sheet former (3), firmware glue is applied in the bottom surface is fixed on the base plate with firmware glue.Hit stamen sheet former (3) with the grinding sand blasting its mill is cut formation truncated cone pipe stamen sheet.With the molten firmware glue that removes of solvent, disjoint set get cut pipe stamen sheet, and polish with acid polishing agent and to manage the stamen sheet.
2) molybdenum electrode welding: negative pole molybdenum electrode (31) is placed the surface of stamen sheet (3), and anodal molybdenum electrode (32) is placed the bottom of stamen sheet (3), in electric furnace, be heated to aluminium film welding stamen sheet (3) and molybdenum electrode (32).
3) be welded into assembly stamen sheet tangent plane polishing and oxidation: polish the tangent plane of stamen sheet (3) with sour polishing agent, and with the tangent plane of oxidant oxidation stamen sheet (3).
4) the stamen sheet being installed is welded into assembly and inserts the glass dust slurry: aluminium porcelain substrate (1) is made diode trunk dice, and ((1b) will manage the stamen sheet and be welded into assembly and be installed among the Guan Ruikong (1a).Glass dust is modulated into pulpous state with pure water, inserts in the gap that the stamen sheet is welded into assembly and aluminium porcelain substrate Guan Ruikong (1a).Heat-agglomerating glass dust (2) in electric furnace is applied pipe stamen sheet (3), and contacts with pipe stamen hole wall (1a) with pipe stamen chip module.
5) electrode, coating and sintering: with the wire mark machine thick film silver paste is printed on the upper and lower faces and the sintering of substrate and stamen chip module, becomes electrode (71) (72).Continuous with screen printing mode, print thick film glass cream also sintering forms cladding glasses (81) (82) on upper and lower faces.
6) terminal printing, sintering and terminal dip in tin: with thick film silver paste printing terminal (9) (10), and give sintering.The exposed portions serve hot dipping of terminal (9) (10) and electrode (71) (72) in the tin of fusion.Last backfin makes each diode fracture and bulk-breaking along cutting semi cuts on the substrate in advance.
7) available automation detects, sorts and pack the aluminium porcelain plate sheet N-type semiconductor N diode assembly of making, and forms the specification product.
Figure 11 represents the aluminium porcelain plate sheet N-type semiconductor N diode assembly that utilizes this case method to make.
[embodiment 4-7]
Can above-mentioned manufacture method slightly be adjusted, use the element and the assembly of following various encapsulation.
1) axial lead diode (Axial Lead Diode)
2) many stamens sheet high-voltage diode (Multi-Chip High Voltage Diode)
3) bridge rectifier diode (Bridge Rectifier)
4) diode array assembly (Diode Array Module)
Certainly, two polar electrnic components of other suitable same way as coatings all may utilize identical step preparation to finish.
[embodiment 8]
Diode element of the present invention is applied in the example of bridge rectifier component:
The present invention not only has the above-mentioned not advantage of structure method and step on the same group, on the comfort level of using raising is arranged also.Below explanation diode element of the present invention is applied in the application examples of bridge rectifier component goods.
1) preparation insulation trunk main components makes it have four stamen sheet mount pads.
2) according to the step shown in the previous embodiment 1-8 installation of stamen sheet is bonded in this insulation trunk.
3) afterwards, carry out the installation of electric-conductor, make with the stamen sheet and weld the circuit that constitutes rectifier bridge respectively, and the formation input～,～output+,-(positive and negative) four external terminal portions.Figure 12 represents to utilize the assembly assumption diagram of the semiconductor diode element that aforesaid way obtains.
4) at last, make coating application or now coating cover plate and finish making.
In this commercial Application example, the insulation trunk is mainly constructed part, electric-conductor and coating cover plate and be can be made into the big plate base that comprises a plurality of unit connecting piece.The stamen sheet is installed after the bonding, with electric-conductor and the welding of stamen sheet, cover plate is set up again.Portion of terminal sees through the terminal hole machine-shaping of reserving outside the electric-conductor.
The silicon semiconductor diode element that utilizes said method to make, its basic structure only have an insulation trunk, diode stamen sheet, and binding material.Insulation trunk itself is a machining tool, is again the trunk of diode.In the present invention, this binding material can use and be fit to the material that stamen sheet P-N knot applies, the effect that has bonding concurrently and apply, and can reduce the production material.
Method provided by the present invention, step is simple and easy.Owing to can make insulation trunk main components be prepared into polynary connecting piece form, therefore can be easy to set up complete diode mass production method, promptly process a plurality of elements, thereby reduce cost with a step.
Method of the present invention not only can be used for the diode stamen sheet that has the P-N coat or do not add coat, more can be used for the diode stamen sheet of the superimposed form of multi-disc (Diode Chip Stack).In addition, on trunk, not only can settle single diode stamen sheet, a plurality of diode stamen sheets also can be installed, once finish processing.Simultaneously, also can be on trunk printed circuit lead or the circuit guiding element is installed, become special diode circuit component.
On using, diode assembly can leave electrode or the power supply connector is installed the open space of usefulness, also can be prepared into trunk and guiding element assembly that electrical connector has been installed.And the electrical connection module of being installed can be installed before stamen sheet bonding is installed; Also can after bonding, install again.And setter also can be installed on the trunk in advance or be connected with the stamen sheet in advance before stamen sheet bonding, is then bondd, and is numerous.
As mentioned above, silicon semiconductor diode element provided by the present invention is different with conventional device, has novel structure, and can improve function; And the manufacture method of silicon semiconductor diode provided by the present invention has been simplified the processing procedure of routine techniques greatly, has the effect that increases productivity, reduces cost.
Claims (3)
1. the stamen sheet of diode element or assembly insulation trunk structure comprises:
One insulation trunk spare, each element or assembly unit are established one or more stamen sheet mount pads;
Semiconductor diode stamen sheet is positioned at this stamen sheet mount pad, is surrounded by this insulation trunk and keeps a suitable distance; And
One binding material is in order to be fixed on this semiconductor diode stamen sheet in this location hole in the cutting side;
It is characterized in that this binding material also can adopt the P-N junction isolation coating material of this semiconductor diode stamen sheet, and this binding material be not coated on this semiconductor diode stamen sheet not with this relative surface of stamen sheet mount pad.
2. make two polar electrnic component stamen sheets and the method for the trunk member that insulate for one kind, comprising:
Preparation one insulation trunk connector;
Each cell prepares a stamen mount pad on this connector;
In this stamen sheet mount pad, insert binding material, two polar electrnic component stamen sheets are bonded in this stamen sheet mount pad; And
Wherein, this binding material do not coat this two polar electrnic components stamen sheet not with this relative surface of insulation trunk connector.
3. method of making the circuit unit of a plurality of two polar electrnic component compositions comprises:
Preparation one insulation trunk spare, each assembly unit is provided with a plurality of two polar electrnic component stamen sheet mount pads;
The required a plurality of two polar electrnic component stamen sheets of preparation assembly; And
One binding material is placed between each stamen sheet and the stamen sheet mount pad, in order to stamen sheet out of the ordinary is bonded in the mount pad out of the ordinary, this adhesives be not overlying on this stamen sheet not with this relative surface of stamen sheet mount pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95116287A CN1051645C (en) | 1995-09-18 | 1995-09-18 | Structure and production of silicone semiconductor diode and chip and their insulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95116287A CN1051645C (en) | 1995-09-18 | 1995-09-18 | Structure and production of silicone semiconductor diode and chip and their insulator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1146073A true CN1146073A (en) | 1997-03-26 |
| CN1051645C CN1051645C (en) | 2000-04-19 |
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ID=5080806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN95116287A Expired - Fee Related CN1051645C (en) | 1995-09-18 | 1995-09-18 | Structure and production of silicone semiconductor diode and chip and their insulator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1051645C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106458722A (en) * | 2014-06-27 | 2017-02-22 | 法国圣戈班玻璃厂 | Method for activating layer on glass substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4267559A (en) * | 1979-09-24 | 1981-05-12 | Bell Telephone Laboratories, Incorporated | Low thermal impedance light-emitting diode package |
-
1995
- 1995-09-18 CN CN95116287A patent/CN1051645C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106458722A (en) * | 2014-06-27 | 2017-02-22 | 法国圣戈班玻璃厂 | Method for activating layer on glass substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1051645C (en) | 2000-04-19 |
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