CN114597306A - Structured superconducting tape single photon detector - Google Patents
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Abstract
The invention discloses a structured superconducting tape single photon detector; the invention increases the response sensitivity of the superconducting tape to photons through structure regulation and control, reduces the requirement of the conventional superconducting single-photon detector on the width of the superconducting tape, thereby realizing high-sensitivity single-photon detection, and having the characteristics of large detection area, high speed, simple preparation, easy expansion to large-scale array structure and the like. The single photon detector sequentially comprises a substrate, a geometric control superconducting tape, an electrode, an optical medium layer and an optical reflector from bottom to top; the preparation method mainly comprises the following steps: depositing a layer of superconducting film on the surface of the substrate by adopting magnetron sputtering; preparing an electrode on the superconducting film by adopting photoetching and stripping technologies; preparing a structured superconducting tape shape on the superconducting thin film by using an electron beam exposure technology and a reactive ion etching technology; and respectively depositing an optical medium layer and a metal reflecting layer on the surface of the superconducting tape by using a chemical vapor deposition technology and an electron beam evaporation technology to serve as optical cavities.
Description
Technical Field
The invention relates to the technical field of optical detection, in particular to a structured superconducting tape single photon detector.
Background
A Superconducting Nanowire Single Photon Detector (SNSPD) is a powerful tool for optical limit detection, and after the rapid development of more than twenty years, the SNSPD has high detection efficiency, ultra-low dark count, ultra-high time resolution and wide response spectrum. The excellent performances make the optical fiber composite material stand out in a plurality of single photon detectors, and the optical fiber composite material has good application prospects in the fields of deep space optical communication, quantum optics, biological fluorescence imaging, laser radar, dark substance detection and the like.
The conventional SNSPDs are generally filled with a meandering nanowire structure with the width of 80-100 nm on an area of 20 micrometers multiplied by 20 micrometers to serve as a photosensitive surface of a detector, and single-mode optical fibers are used for optically coupling the SNSPDs. In practical applications, the detector needs a larger photosensitive surface to perform free space coupling or multimode fiber coupling (the core diameter is larger than 50 μm) effectively, and the conventional small-area SNSPDs cannot meet the application requirements. Therefore, the preparation of SNSPD with large photosensitive area and high performance is an inevitable trend in the future.
At present, the method for improving the photosensitive area of SNSPD comprises the following steps: one aspect is to extend the area of a single pixel detector by increasing the length of the nanowire, but the dynamic inductance of the detector increases with the length of the nanowire, which affects the recovery time and maximum count rate of the device. Another aspect is to use the array SNSPD to increase the detector area, but as the number of arrays increases, there are significant challenges to the readout circuitry of the SNSPD. In these methods, as the area of the SNSPD is enlarged, geometric defects of the nanowires are inevitable during the manufacturing process, which affects uniformity and yield of the detector, and finally various performances of the detector are reduced. How to prepare a large-area, high-efficiency and high-speed array superconducting single-photon detector and reduce related negative effects at the same time becomes an urgent problem to be solved.
Disclosure of Invention
The purpose of the invention is as follows: the invention provides a structured superconducting tape single-photon detector in order to prepare a large-area superconducting single-photon detector and improve the uniformity and yield of the detector in the preparation process.
The technical scheme is as follows: structured superconducting tape single photon detector, from supreme down include in proper order: the superconducting structure comprises a substrate, a structured superconducting tape and an electrode, wherein the structured superconducting tape is positioned on the surface of the substrate, and the electrode is arranged at the tail end connection part of the structured superconducting tape; the structured superconducting tape comprises a plurality of micro-nano hole structures, and each micro-nano hole structure is a closed hole structure.
Further, the method also comprises the following steps: the optical reflection mirror comprises an optical medium layer positioned on the surface of the structured superconducting tape and an optical reflection mirror positioned on the surface of the optical medium layer.
Further, the structured superconducting tape is composed of a superconducting thin film, and the structure of the superconducting thin film is a winding structure connected end to end.
Furthermore, the width of the structured superconducting tape is 0.1-20 mu m, and the filling rate is 0.1-0.9.
Further, the micro-nano-pore structure is characterized by a transverse width along the superconducting tape direction of 3% to 95% of the width of the superconducting tape.
In the present invention, the fill factor of the detector is improved by designing the superconducting tapes in an end-to-end serpentine shape; secondly, the structure embedded in the superconducting tape is designed into a size closed hole structure array to regulate and control the generation and the crossing of the magnetic flux of the detector. In the invention, the structuring is realized by designing a closed hole structure array at the center of a micron-width superconducting tape, and the aim of the invention is to improve the generation and the crossing of magnetic flux in the superconducting tape and facilitate the detection of single photons. The existence of the optical medium layer and the optical reflector can improve the single photon absorption rate of the superconducting tape, thereby improving the detection efficiency of the superconducting tape single photon detector. Because the width of the superconducting tape is micron-scale, compared with the traditional nanowire, the preparation of the large-area superconducting tape single-photon detector with good uniformity is easier.
The invention also discloses a preparation method of the structured superconducting tape single photon detector, which comprises the following steps:
step 1: adopting a magnetron sputtering technology to grow a layer of superconducting film on the substrate;
step 2: growing a metal electrode on the superconducting film;
and step 3: and preparing the structured superconducting tape on the superconducting film by adopting an electron beam exposure technology and a reactive ion etching technology.
Further, after the step 3, the following steps are also included:
and 4, step 4: depositing a layer of silicon dioxide on the surface of the structured superconducting tape by adopting a chemical vapor deposition method to serve as an optical medium layer;
and 5: growing a layer of gold on the surface of the optical medium layer by adopting an electron beam evaporation and stripping technology to be used as an optical reflector; and finally obtaining the structured superconducting tape single photon detector.
Further, the step 3 specifically includes:
s310: spin-coating a positive electron beam anti-etching glue on the superconducting film with the electrode to serve as an electron beam anti-etching layer;
s320: exposing the film with the electron beam anti-etching layer according to the pattern of the structured superconducting tape by adopting an electron beam exposure technology, and obtaining the pattern of the structured superconducting tape on the electron beam anti-etching layer by adopting development and fixation treatment;
s330: transferring the pattern of the structured superconducting tape onto the film by adopting a reactive ion etching technology;
s340: and (3) removing the residual positive electron beam anti-etching glue on the surface of the superconducting tape by using N-methylpyrrolidone solution water bath ultrasound to obtain the structured superconducting tape.
Further, in S320, an electron beam current of 2nA is used to draw a structured shape on the film having the electron beam etching resist layer, and the exposure dose is 600 μ C/cm2。
Further, the structural shape is a closed hole structure. The closed hole structure includes, but is not limited to, round holes, elliptical holes, square holes, rectangular holes, and wing holes.
Has the advantages that: compared with the prior art, the invention has the following advantages:
(1) the invention provides a thought of a structured superconducting tape to prepare a large-area superconducting tape single-photon detector, the sensitivity of the superconducting tape to photon response is increased through structure regulation, the requirement of the conventional superconducting single-photon detector on the width of the superconducting tape is reduced, the micron-width structured superconducting tape allows the preparation of a detector with a large photosensitive area, the preparation difficulty of the process is reduced while the single-photon detection is realized, the invention has the characteristics of low preparation difficulty, high coupling efficiency and the like, and the advantage of the large photosensitive area can expand the application of the detector in practice; that is to say, the single photon detector can realize high-sensitivity single photon detection, and has the characteristics of large detection area, high speed, simple preparation, easy expansion to a large-scale array structure and the like;
(2) compared with the superconducting nanowire single-photon detector under the same photosensitive area, the micron-width structured superconducting tape single-photon detector has smaller dynamic inductance and recovery time; under the same superconducting line width, the effective sectional area of the geometric control superconducting tape is smaller, which is beneficial to improving the response capability of the detector to single photons; the micron-width geometric control superconducting tape has larger current carrying capacity, which is beneficial to a reading end to have larger signal-to-noise ratio;
(3) the micron-width structured superconducting tape has low dark counting capacity, and is beneficial to the application of the superconducting tape single-photon detector in the field of astronomical physics, such as the detection of dark substances.
Drawings
FIG. 1 is a schematic three-dimensional structure of a structured superconducting tape single photon detector of the present invention;
FIG. 2 shows a large photosensitive area of 500X 500 μm according to the present invention2A global SEM image of the structured superconducting tape single photon detector of (1);
fig. 3 is a partial SEM detail of a structured superconducting tape of the present invention;
FIG. 4 is a graph of voltage pulse signals of a structured superconducting tape single photon detector of the present invention in response to photons at an operating temperature of 300 mK;
FIG. 5 is a resistance versus temperature graph of a structured superconducting tape single photon detector of the present invention;
FIG. 6 is a voltage-current characteristic curve of a structured superconducting tape single photon detector of the present invention at an operating temperature of 300 mK;
FIG. 7 is a graph of single photon counts and dark counts at 1550nm wavelength for a structured superconducting tape single photon detector of the present invention at 300mK operating temperature.
Detailed Description
The technical solution of the present invention will be further explained with reference to the accompanying drawings.
The structured superconducting tape single photon detector provided by the invention is similar to a method for destroying a superconducting state by a geometric hot spot, and magnetic flux crossing is a method for generating phase change of a superconducting film. In general, magnetic flux is effectively pinned in a uniform current-carrying superconducting thin film due to the presence of a magnetic flux barrier. Relevant experiments prove that the superconducting tape is relevant to the magnetic flux dynamics for detecting the single photon, and the magnetic flux movement in the superconducting film is regulated and controlled through a geometric structure, so that the superconducting tape is beneficial to improving the detection of the single photon. According to the invention, the structured superconducting tape is realized by designing the circular hole array at the central position of the micron-width superconducting tape, and the structured superconducting tape with the circular hole array can promote the generation and the crossing of magnetic flux in the superconducting tape. When incident photons are absorbed by the current-biased superconducting tape, the thermally excited magnetic flux enters the superconducting tape with the circular array of holes, resulting in local suppression of the superconducting sequence parameter (Δ), and once the bias current exceeds a threshold, the barrier height that prevents the magnetic flux from crossing will be reduced to zero. Eventually, the magnetic flux moves through the entire superconducting film, destroying the superconductivity and accompanying a detectable voltage pulse, thereby achieving single photon detection.
In order to achieve the above purpose, the structured superconducting tape single photon detector of the invention is shown in fig. 1 and comprises the following components in sequence from bottom to top: the double-sided thermal oxidation silicon dioxide substrate comprises a double-sided thermal oxidation silicon dioxide substrate 1, a geometric control superconducting tape 2, an electrode 3, an optical medium layer 4 and an optical reflection layer 5. The structured superconducting tape 2 is located on the surface of the double-sided thermal oxidation silicon dioxide substrate 1, the electrode 3 is located at the tail end connection position of the structured superconducting tape 2, the optical medium layer 4 is located on the surface of the structured superconducting tape 2 and serves as an anti-reflection layer for absorbing light, the optical reflection layer 5 is located on the surface of the optical medium layer 4, and the optical reflection layer 5 and the optical medium layer 4 form an optical cavity of the detector to improve the absorption efficiency of the detector for single photons.
As shown in fig. 2And as shown in fig. 3, the structured superconducting tape is composed of a superconducting MoSi thin film, the structure of the superconducting tape is a meandering micron line which is connected end to end, and the filling rate of the detector is improved by the meandering shape which is connected end to end; the superconducting tape with geometric regulation is obtained by designing a circular hole array at the central position of the superconducting tape. The circular hole array with a certain size is embedded into the superconducting tape to improve the generation and the crossing of the magnetic flux of the detector, thereby being beneficial to the detection of single photons. Parameters in the circular hole array, such as the diameter and the distance of the holes, can be regulated and controlled according to requirements. In some embodiments, the thickness of the superconducting MoSi film is 4.5nm, the width of the superconducting tape is 1-3 μm, the filling rate of the superconducting tape is 0.3-0.7, the diameter of the circular hole is 300nm, the distance between the holes is 200nm, and the photosensitive area of the detector is 500 × 500 μm2. Because the width of the superconducting tape is micron-scale, compared with the traditional nanowire, the preparation of a large-area superconducting tape single-photon detector with good uniformity is easier, and the preparation difficulty of the process is reduced while the single-photon detection is realized.
Compared with a superconducting nanowire single-photon detector, the micron-wide structured superconducting tape has larger current carrying capacity, which is beneficial to a reading end to have larger signal-to-noise ratio; in addition, the micron-wide structured superconducting tape single photon detector has smaller dynamic inductance and recovery time under the same photosensitive area. And the existence of the optical medium layer 4 and the optical reflection layer 5 can improve the absorption rate of the superconducting tape to a single photon, thereby improving the detection efficiency of the superconducting tape single photon detector.
The invention also provides a preparation method of the structured superconducting tape single photon detector, which comprises the following steps:
s100: adopting a magnetron sputtering technology to grow a superconducting MoSi film on a double-sided thermal oxidation silicon dioxide substrate;
s200: growing a layer of gold electrode with a certain pattern on the superconducting MoSi film by ultraviolet lithography, electron beam evaporation and stripping technology;
s300: and transferring the pattern of the structured superconducting tape with the circular hole array to the superconducting MoSi film by using an electron beam exposure technology and a reactive ion etching technology to obtain the structured superconducting tape with the circular hole array. The pattern of the structured superconductive tape is a closed pore structure including, but not limited to, round, elliptical, square, rectangular, and wing pores.
S400: depositing a layer of pure silicon dioxide on the surface of the structured superconducting tape with the circular hole array by adopting a chemical vapor deposition technology to be used as an optical medium layer;
s500: a layer of metal gold (purity 99.999%) is generated on the surface of the optical medium layer by adopting an electron beam evaporation and stripping technology and is used as an optical reflecting layer.
The preparation method can obtain 1-3 mu m superconducting tapes on the superconducting film, the filling rate of the superconducting tapes is 0.5, the diameter of a circular hole array designed at the center of the superconducting tapes is 250-350 nm, the hole pitch is 200-300 nm, and the photosensitive area of a detector is 500 multiplied by 500 mu m2. The preparation process of the geometrical regulation superconducting tape is beneficial to reducing the preparation difficulty of a large-area superconducting tape single-photon detector, improving the photosensitive area of the detector, and the wider superconducting tape has the capability of detecting near-infrared single-photons.
The preparation process of the present invention will now be further illustrated with reference to examples.
The preparation method of the embodiment comprises the following steps:
step 1: pretreating a double-polished thermal silicon oxide substrate serving as a detector substrate, wherein in the embodiment, the double-polished thermal silicon oxide substrate with the thickness of 268nm is selected; the pretreatment of the step comprises the following steps:
firstly, ultrasonically cleaning a double-polished thermal silicon oxide substrate by using acetone and ethanol respectively at the power of 80W to remove pollutants on the surface of the substrate, wherein the time is 5 minutes each;
then washing with deionized water;
and finally, quickly drying the moisture on the surface of the substrate by using nitrogen.
And 2, step: adopting magnetron sputtering technology to grow a superconducting MoSi film with the thickness of 4.5nm on a substrate; the concrete implementation steps are as follows:
and (4) conveying the substrate into a sub-chamber of magnetron sputtering, and carrying out ion milling on the substrate. The ion milling conditions are as follows: 15Sccm argon flow, 30mA ion beam current, 300V anode voltage and 1 minute ion milling time.
The substrate after ion milling is sent into a magnetron sputtering main chamber, and the vacuum degree of the main chamber is 10-6And below mTorr, growing a MoSi film on the substrate. The growth conditions of the MoSi film are as follows: the flow rate of argon gas was 30Sccm, the sputtering pressure was 2mTorr, the sputtering current was 0.5A, and the sputtering rate was 0.95 nm/s.
Growing a layer of Nb on the MoSi film in situ5N6The film acts as a protective layer. Nb5N6The film growth conditions are as follows: the flow ratio of nitrogen to argon was 4: 1. the sputtering pressure was 15mTorr, the sputtering power was 400W, and the sputtering rate was 0.2 nm/s.
And 3, step 3: growing a layer of gold electrode with a certain pattern on the superconducting MoSi film by ultraviolet lithography, electron beam evaporation and stripping technology, wherein the thickness of gold is 120 nm; the method comprises the following specific operation steps:
and spin-coating a positive photoresist AZ1500 on the surface of the film by using a spin coater.
And exposing the film by using a photoetching machine according to the pattern of the mask.
And developing the exposed film by using a positive developing solution to obtain the pattern of the electrode.
And plating a layer of gold on the developed film by using electron beam evaporation.
Excess gold was stripped on an ultrasonic machine using acetone and ethanol.
And 4, step 4: transferring the pattern of the structured superconducting tape with the circular hole array to a superconducting MoSi film by utilizing an electron beam exposure technology and a reactive ion etching technology; the method comprises the following specific operation steps:
and spin-coating positive electron beam resist PMMA with the thickness of about 200nm on the surface of the superconducting MoSi film with the electrode shape by using a spin coater. The solute concentration of PMMA used in this example was 4%, the pre-baking temperature of PMMA was 180 ℃ and the baking time was 4 min.
Drawing a graph of the structured superconducting tape with the circular hole array by adopting an electron beam current of 2nA through an electron beam exposure machine; the electron energy of the electron beam exposure machine is operated at 100keV, and the exposure is carried outThe beam current is 2nA, the scanning step length is 0.1-5 nm, and the exposure dose is 600 mu C/cm2. The pattern of the structured superconducting tape with the array of circular holes of this embodiment is: arranging round holes at the center of the superconducting tape to form the superconducting tape with a round hole array, wherein the diameter of the holes is 250-350 nm, the hole pitch is 200-300 nm, and the effective photosensitive area of the detector is 500 multiplied by 500 mu m2。
The exposed sample was developed and fixed using positive photoresist developer, which used MIBK, IPA-1: 3 as a developing solution and isopropyl alcohol as a fixing solution. The developing time was 2 minutes, the fixing time was 1 minute, and the process was carried out at a temperature of 22 degrees celsius.
Transferring the developed structured superconducting tape graph with the circular hole array to a superconducting MoSi film by utilizing reactive ion etching; the chamber pressure was 30mTorr and the etch rate was 1 nm/s. The etching time can be adjusted according to the film thickness. In this embodiment, the gas used in the reactive ion etching is CF4The flow rate is 20Sccm, the air pressure is 1.2Pa, the etching power is 50W, and the etching time is 90 s.
And removing the electron beam photoresist remained on the surface of the superconducting tape by using an N-methylpyrrolidone solution in a water bath kettle, wherein the water bath temperature is 80 ℃, and the water bath time is 30 minutes to 1 hour.
A structured superconducting tape with an array of circular holes is finally obtained, as shown in fig. 2 and 3.
And 5: a layer of pure silicon dioxide is grown on the superconducting micron band through a chemical vapor deposition technology to serve as an optical medium layer, and the thickness of the silicon dioxide is 268nm, so that the absorption of photons by a detector is facilitated.
Step 6: and growing a layer of gold on the optical medium layer by photoetching and electron beam evaporation technology to serve as an optical reflecting layer, wherein the thickness of the gold is 200 nm.
The structured superconducting tape with the circular hole array prepared in this example is shown in fig. 2 and 3, the width of the superconducting tape is 1.5 μm, the filling rate is 0.5, the diameter of the circular hole array designed at the center of the superconducting tape is 300nm, and the hole pitch is 200 nm. Fig. 4 shows a graph of the output voltage pulses of a detector with a recovery time of 149ns and a pulse amplitude of 310 mV. Fig. 5 shows the resistance of the probe as a function of temperature, from which it can be seen that the superconducting transition temperature of the probe is 3.6K. FIG. 6 shows the voltage-current curve of the probe, which has a critical superconducting current of 20 μ A. To verify the optical response performance of the detector, the photon count and dark count of the device at the 1550nm single photon level were measured separately for the detector at an operating temperature of 300mK, as shown in fig. 7.
Claims (10)
1. The single photon detector of the structured superconducting tape is characterized in that: from supreme including in proper order down: the superconducting structure comprises a substrate, a structured superconducting tape and an electrode, wherein the structured superconducting tape is positioned on the surface of the substrate, and the electrode is arranged at the tail end connection part of the structured superconducting tape; the structured superconducting tape comprises a plurality of micro-nano hole structures, and each micro-nano hole structure is a closed hole structure.
2. The structured superconducting tape single photon detector of claim 1, wherein: further comprising: the optical reflection mirror comprises an optical medium layer positioned on the surface of the structured superconducting tape and an optical reflection mirror positioned on the surface of the optical medium layer.
3. The structured superconducting tape single photon detector of claim 1, wherein: the structured superconducting tape is composed of superconducting thin films, and the structure of the structured superconducting tape is a winding structure connected end to end.
4. The structured superconducting tape single photon detector of claim 1, wherein: the width of the structured superconducting tape is 0.1-20 mu m, and the filling rate is 0.1-0.9.
5. The structured superconducting tape single photon detector of claim 1, wherein: the micro-nano-pore structure is characterized by a transverse width along the direction of the superconductor tape of 3% to 95% of the width of the superconductor tape.
6. The preparation method of the structured superconducting tape single photon detector is characterized by comprising the following steps: the method comprises the following steps:
step 1: growing a layer of superconducting film on a substrate by adopting a magnetron sputtering technology;
step 2: growing a metal electrode on the superconducting film;
and step 3: and preparing the structured superconducting tape on the superconducting film by adopting an electron beam exposure technology and a reactive ion etching technology.
7. The method for preparing the structured superconducting tape single photon detector according to claim 6, wherein: after the step 3, the following steps are also included:
and 4, step 4: depositing a layer of silicon dioxide on the surface of the structured superconducting tape by adopting a chemical vapor deposition method to serve as an optical medium layer;
and 5: growing a layer of gold on the surface of the optical medium layer by adopting an electron beam evaporation and stripping technology to be used as an optical reflector; and finally obtaining the structured superconducting tape single photon detector.
8. The method for preparing the structured superconducting tape single photon detector according to claim 6, wherein: the step 3 specifically includes:
s310: spin-coating a positive electron beam anti-etching glue on the superconducting film with the electrode to serve as an electron beam anti-etching layer;
s320: exposing the film with the electron beam anti-etching layer according to the pattern of the structured superconducting tape by adopting an electron beam exposure technology, and obtaining the pattern of the structured superconducting tape on the electron beam anti-etching layer by adopting development and fixation treatment;
s330: transferring the pattern of the structured superconducting tape onto the film by adopting a reactive ion etching technology;
s340: and (3) removing the residual positive electron beam anti-etching glue on the surface of the superconducting tape by using N-methylpyrrolidone solution water bath ultrasound to obtain the structured superconducting tape.
9. The method for manufacturing the single photon detector with the structured superconducting tape according to claim 8, wherein the method is characterized in that: in S320, an electron beam current of 2nA is adopted to draw a structural shape on the film with the electron beam anti-etching layer, and the exposure dose is 600 mu C/cm2。
10. The method for preparing the structured superconducting tape single photon detector according to claim 8, wherein: the structural shape is a closed hole structure, and the closed hole structure is any one of a round hole, an elliptical hole, a square hole, a rectangular hole and a wing hole.
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