CN114585776B - 氧化镓结晶的制法 - Google Patents

氧化镓结晶的制法 Download PDF

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Publication number
CN114585776B
CN114585776B CN202080048364.0A CN202080048364A CN114585776B CN 114585776 B CN114585776 B CN 114585776B CN 202080048364 A CN202080048364 A CN 202080048364A CN 114585776 B CN114585776 B CN 114585776B
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pressure
aqueous solution
ions
gallium oxide
temperature
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CN114585776A (zh
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吉川润
前田美穗
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NGK Insulators Ltd
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NGK Insulators Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/54—Improvements relating to the production of bulk chemicals using solvents, e.g. supercritical solvents or ionic liquids

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202080048364.0A 2019-11-05 2020-10-08 氧化镓结晶的制法 Active CN114585776B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019200475 2019-11-05
JP2019-200475 2019-11-05
PCT/JP2020/038172 WO2021090635A1 (ja) 2019-11-05 2020-10-08 酸化ガリウム結晶の製法

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CN114585776A CN114585776A (zh) 2022-06-03
CN114585776B true CN114585776B (zh) 2025-06-03

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US (1) US12163252B2 (https=)
JP (1) JP7619954B2 (https=)
CN (1) CN114585776B (https=)
WO (1) WO2021090635A1 (https=)

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Publication number Priority date Publication date Assignee Title
CN113614292B (zh) * 2019-03-28 2024-08-23 日本碍子株式会社 半导体膜
JP7644812B2 (ja) * 2021-04-27 2025-03-12 日本碍子株式会社 複合基板、複合基板の製法及び酸化ガリウム結晶膜の製法
WO2026004873A1 (ja) * 2024-06-29 2026-01-02 国立研究開発法人物質・材料研究機構 酸化ガリウム結晶、その製造方法およびその用途

Citations (2)

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JP2012076977A (ja) * 2010-10-06 2012-04-19 Mitsui Mining & Smelting Co Ltd 酸化ガリウム粉末
RU2011145180A (ru) * 2011-11-07 2013-05-20 Учреждение Российской академии наук Институт катализа им. Г.К. Борескова Сибирского отделения РАН Синтез наночастиц оксида галлия в сверхкритической воде

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JPS5924729B2 (ja) * 1979-02-05 1984-06-12 住友金属鉱山株式会社 結晶性酸化ガリウムの製造方法
JP4868725B2 (ja) * 2004-09-14 2012-02-01 シャープ株式会社 蛍光体の製造方法
JP2008195586A (ja) * 2007-02-15 2008-08-28 Nippon Light Metal Co Ltd リチウムガレート単結晶及びその製造方法
JP2009126764A (ja) * 2007-11-27 2009-06-11 Nippon Light Metal Co Ltd γ−Ｇａ２Ｏ３の製造方法及びγ−Ｇａ２Ｏ３
US8900362B2 (en) * 2010-03-12 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of gallium oxide single crystal
CN101993110B (zh) * 2010-11-14 2012-06-27 青岛理工大学 一种微波水热法制备β-氧化镓的方法
JP6067532B2 (ja) 2013-10-10 2017-01-25 株式会社Flosfia 半導体装置
JP6349592B2 (ja) 2014-07-22 2018-07-04 株式会社Flosfia 半導体装置
JP5987229B2 (ja) 2015-03-09 2016-09-07 高知県公立大学法人 ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
CN107180882B (zh) * 2017-05-23 2018-10-26 哈尔滨工业大学 一种β-氧化镓纳米阵列的制备方法
JP7681039B2 (ja) * 2020-10-08 2025-05-21 日本碍子株式会社 酸化ガリウム単結晶粒子及びその製法
JP7644812B2 (ja) * 2021-04-27 2025-03-12 日本碍子株式会社 複合基板、複合基板の製法及び酸化ガリウム結晶膜の製法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012076977A (ja) * 2010-10-06 2012-04-19 Mitsui Mining & Smelting Co Ltd 酸化ガリウム粉末
RU2011145180A (ru) * 2011-11-07 2013-05-20 Учреждение Российской академии наук Институт катализа им. Г.К. Борескова Сибирского отделения РАН Синтез наночастиц оксида галлия в сверхкритической воде

Non-Patent Citations (1)

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Title
Growth of α-Ga2O3 single crystals at 44 Kbars;J.P.Remeika et al.;《Applied physics letters》;19660215;87-88 *

Also Published As

Publication number Publication date
WO2021090635A1 (ja) 2021-05-14
US12163252B2 (en) 2024-12-10
CN114585776A (zh) 2022-06-03
US20220162768A1 (en) 2022-05-26
JPWO2021090635A1 (https=) 2021-05-14
JP7619954B2 (ja) 2025-01-22

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