CN114582690A - Semiconductor process equipment and magnetron mechanism thereof - Google Patents

Semiconductor process equipment and magnetron mechanism thereof Download PDF

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Publication number
CN114582690A
CN114582690A CN202210198432.2A CN202210198432A CN114582690A CN 114582690 A CN114582690 A CN 114582690A CN 202210198432 A CN202210198432 A CN 202210198432A CN 114582690 A CN114582690 A CN 114582690A
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CN
China
Prior art keywords
magnetic
magnetic pole
pole
back plate
inner magnetic
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CN202210198432.2A
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Chinese (zh)
Inventor
董彦超
王世如
杨玉杰
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to CN202210198432.2A priority Critical patent/CN114582690A/en
Publication of CN114582690A publication Critical patent/CN114582690A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
    • H01J23/02—Electrodes; Magnetic control means; Screens
    • H01J23/10—Magnet systems for directing or deflecting the discharge along a desired path, e.g. a spiral path
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
    • H01J25/50—Magnetrons, i.e. tubes with a magnet system producing an H-field crossing the E-field
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The embodiment of the application provides semiconductor process equipment and a magnetron mechanism thereof. The magnetron mechanism is applied to semiconductor process equipment and comprises: the magnetic conduction assembly comprises a back plate, an outer magnetic pole, an inner magnetic pole and a magnetic conduction assembly; the outer magnetic pole is arranged on the bottom surface of the back plate, and an accommodating space is enclosed on the bottom surface; the inner magnetic pole is arranged on the bottom surface of the back plate and is positioned in the accommodating space; the magnetic conduction assembly is made of magnetic conduction materials, is arranged on the bottom surface of the back plate and is positioned between the two adjacent outer magnetic poles and the inner magnetic pole and used for guiding the magnetic field intensity to be uniformly distributed. According to the embodiment of the application, the horizontal magnetic field which is uniformly distributed is formed between the outer magnetic pole and the inner magnetic pole, so that the magnetic induction lines near the target are basically parallel to the target, the utilization rate of the target is greatly improved, and particularly, the application cost is greatly reduced under the condition of titanium or gold and other precious metal targets.

Description

Semiconductor process equipment and magnetron mechanism thereof
Technical Field
The application relates to the technical field of semiconductor processing, in particular to semiconductor process equipment and a magnetron mechanism thereof.
Background
Currently, magnetron sputtering is one of Physical Vapor Deposition (PVD) techniques. The magnetron sputtering process can be used for preparing various thin film materials such as metal, semiconductor, insulator and the like, and is widely applied to the fields of integrated circuits, liquid crystal displays, photovoltaics and the like. In the semiconductor process equipment, particles are excited in a high-vacuum process chamber to form plasma, positive ions in the plasma bombard a target under the attraction of negative electricity of a cathode, and sputtered target atoms are deposited on a wafer to form a deposited film. A magnetron in a semiconductor processing apparatus is generally mounted on the back of a target, and a magnetic field generated can change the moving direction of charged particles in plasma so that the charged particles move along a certain curved trajectory. The increase of the motion trail of the charged particles improves the collision chance among the particles, thereby obtaining high-density plasma and improving the speed of depositing the film. The magnetron can control the distribution of plasma and influence the corrosion rate of different positions of the target material, thereby influencing important process parameters such as the service life of the target material, the uniformity of a deposited film and the like.
In the prior art, a magnetron generally comprises permanent magnets and a magnetic yoke, wherein the permanent magnets are assembled on the magnetic yoke. In practical application, because the magnetic induction lines among the groups of permanent magnets are generally arc-shaped, the horizontal components of magnetic field strength vectors at different positions are different, namely the position parallel to the target with higher magnetic field component strength is, the higher the plasma density is, the higher the corrosion rate of the target is, the corrosion appearance of the target is often in a deeper V shape, the utilization rate of the target is low, and the maintenance period of a process chamber is shortened, so that the application and maintenance cost is greatly improved; on the other hand, the process effect changes greatly along with the service life of the target material, so that the complexity of process regulation is greatly increased.
Disclosure of Invention
The application provides semiconductor process equipment and a magnetron mechanism thereof aiming at the defects of the prior art, and aims to solve the technical problems of low target utilization rate, short process chamber maintenance period or high process regulation complexity in the prior art.
In a first aspect, the present application provides a magnetron mechanism applied to a semiconductor processing apparatus, including: the magnetic conduction assembly comprises a back plate, an outer magnetic pole, an inner magnetic pole and a magnetic conduction assembly;
the outer magnetic pole is arranged on the bottom surface of the back plate, and an accommodating space is enclosed on the bottom surface; the inner magnetic pole is arranged on the bottom surface of the back plate and is positioned in the accommodating space;
the magnetic conduction assembly is arranged on the bottom surface of the back plate, is positioned between the two adjacent outer magnetic poles and the inner magnetic pole and is used for guiding the uniform distribution of the magnetic field intensity.
In an embodiment of the present application, the magnetic conductive assembly extends along an extending direction of the outer magnetic pole and/or the inner magnetic pole, and polarities of ends of the outer magnetic pole and the inner magnetic pole, which are far away from the back plate, are opposite.
In an embodiment of the present application, a preset distance is provided between the magnetic conductive assembly and the outer magnetic pole and/or the inner magnetic pole, and the preset distance is adjustable.
In an embodiment of the application, one end of the magnetic conducting component is connected with the back plate through a plurality of fasteners, and the fasteners penetrate through the back plate and are adjustable in position, so that the preset distance is adjustable.
In an embodiment of the present application, the magnetic conductive assembly includes an outer magnetic conductive strip and an inner magnetic conductive strip, the outer magnetic conductive strip extends along an extending direction of the outer magnetic pole, and the outer magnetic conductive strip and an inner sidewall of the outer magnetic pole have the predetermined distance therebetween; the inner magnetic conduction strip extends along the extension direction of the inner magnetic pole, and the preset distance is reserved between the inner magnetic conduction strip and the side wall of the inner magnetic pole.
In an embodiment of the present application, the predetermined distance is greater than zero and less than or equal to two times the width of the outer magnetic pole or the inner magnetic pole; and the width of the outer magnetic conduction strip is smaller than that of the outer magnetic pole, and the width of the inner magnetic conduction strip is smaller than that of the inner magnetic pole.
In an embodiment of the present application, the magnetic conductive element has a first height, the outer magnetic pole and the inner magnetic pole have a second height, and a predetermined ratio is provided between the first height and the second height.
In an embodiment of the present application, the predetermined ratio is greater than or equal to 0.5 and less than or equal to 1.5.
In an embodiment of the application, the outer magnetic pole includes two linear magnetic stripes and two arc-shaped magnetic stripes, the two linear magnetic stripes are arranged in parallel, and end portions of the two linear magnetic stripes are distributed to be integrated with two end portions of the two arc-shaped magnetic stripes so as to surround the accommodating space; the inner magnetic pole is arranged in parallel with the linear magnetic strip; the two outer magnetic conductive strips are respectively close to the two linear magnetic strips and are arranged in parallel with the linear magnetic strips; the two inner magnetic conduction strips are respectively close to two sides of the inner magnetic pole and are arranged in parallel with the inner magnetic pole.
In a second aspect, embodiments of the present application provide a semiconductor processing apparatus comprising a process chamber and a magnetron mechanism as provided in the first aspect, the magnetron mechanism being fixedly disposed at a top of the process chamber, or the magnetron mechanism being movably disposed at the top of the process chamber and being capable of self-rotation at the top of the process chamber.
The technical scheme provided by the embodiment of the application has the following beneficial technical effects:
the embodiment of the application surrounds the outer magnetic pole on the back plate to form the accommodating space, the inner magnetic pole is arranged in the accommodating space, the magnetic conduction assembly is arranged between the outer magnetic pole and the inner magnetic pole, the magnetic conduction assembly can guide the magnetic field to deviate towards the horizontal direction, a horizontal magnetic field which is distributed uniformly is formed between the outer magnetic pole and the inner magnetic pole, magnetic induction lines near the target are basically parallel to the target, the plasma is enabled to be more uniform in corrosion of the target under the influence of the horizontal magnetic field which is distributed uniformly, deep V-shaped depressions are avoided in the corrosion appearance of the target, the utilization rate of the target is greatly improved, particularly, the situation of the titanium or gold noble metal target is met, and the application cost is greatly reduced. In addition, the target material is corroded uniformly, so that the maintenance frequency of a process chamber can be greatly reduced, the process regulation and control complexity can be greatly reduced, and the film deposition uniformity is improved.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic perspective view of a magnetron mechanism according to an embodiment of the present application;
FIG. 2 is a schematic cross-sectional view of a magnetron mechanism according to an embodiment of the present application;
fig. 3A is a schematic diagram of a simulation of the magnetic field direction of a magnetron mechanism provided in the prior art;
fig. 3B is a schematic view of a simulation of a magnetic field direction of a magnetron mechanism according to an embodiment of the present application;
fig. 3C is a schematic diagram of a simulation of a corrosion state of a target in a magnetron mechanism according to an embodiment of the present application;
fig. 4 is a schematic cross-sectional structural diagram of a semiconductor processing apparatus according to an embodiment of the present disclosure.
Detailed Description
Reference will now be made in detail to the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar parts or parts having the same or similar functions throughout. In addition, if a detailed description of the known art is not necessary for illustrating the features of the present application, it is omitted. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The following describes the technical solutions of the present application and how to solve the above technical problems with specific embodiments.
An embodiment of the present application provides a magnetron mechanism applied to semiconductor process equipment, and a schematic structural diagram of the magnetron mechanism is shown in fig. 1, and the magnetron mechanism includes: the magnetic field generator comprises a back plate 1, an outer magnetic pole 2, an inner magnetic pole 3 and a magnetic conduction assembly 4;
the outer magnetic pole 2 is arranged on the bottom surface of the back plate 1, and a containing space 20 is enclosed on the bottom surface; the inner magnetic pole 3 is arranged on the bottom surface of the back plate 1 and is positioned in the accommodating space 20;
the magnetic conduction subassembly 4 is made for the magnetic conduction material, and the magnetic conduction subassembly 4 sets up on the bottom surface of backplate 1 to be located between two adjacent outer magnetic pole 2 and interior magnetic pole 3, the magnetic conduction subassembly 4 can extend the setting along the extending direction of outer magnetic pole 2 and/or interior magnetic pole 3, is used for guiding magnetic field intensity evenly distributed.
As shown in fig. 1, the semiconductor processing equipment may perform, for example, a magnetron sputtering process, but the embodiment of the present application is not limited thereto, and a person skilled in the art may adjust the setting according to actual situations. The back plate 1 is made of a metal material and has a rectangular plate-shaped structure, but the embodiment of the present application does not limit the specific material and structure of the back plate 1, and the setting can be adjusted by a person skilled in the art according to actual situations. Since the drawings show the magnetron mechanism in a top view, the practical application state of the magnetron mechanism will be described in the following description, that is, the side on which the magnetic conductive assembly 4 is mounted is the bottom surface of the back plate 1. The outer magnetic pole 2 and the inner magnetic pole 3 are both made of strong magnetic permanent magnetic materials, the outer magnetic pole 2 can adopt an annular integral structure and is installed on the bottom surface of the back plate 1 by adopting screws so as to surround an accommodating space 20 on the bottom surface of the back plate 1; the inner magnetic pole 3 can be a strip-shaped integral structure, and the inner magnetic pole 3 is installed on the bottom surface of the back plate 1 by adopting a screw and is positioned in the accommodating space 20. The magnetic conduction assembly 4 can adopt a plate-shaped structure made of soft magnetic materials, the magnetic conduction assembly 4 is arranged on the bottom surface of the back plate 1 in a screw or welding mode and is specifically positioned between the two adjacent outer magnetic poles 2 and the inner magnetic pole 2, and the inner magnetic pole 3 is arranged in the accommodating space due to the fact that the outer magnetic poles 2 are of an annular structure, and therefore any one side of the inner magnetic pole 3 is provided with the outer magnetic poles 2. Further, the magnetic conducting component 4 can extend along the extending direction of the outer magnetic pole 2, or extend along the extending direction of the inner magnetic pole 3, and the magnetic conducting component 4 can extend along the extending directions of the outer magnetic pole 2 and the inner magnetic pole 3 at the same time, so that the magnetic conducting component 4 is always arranged between the outer magnetic pole 2 and the inner magnetic pole 3. In practical application, because the magnetic permeability of the magnetic conduction assembly 4 is different from that of media such as air or water, the magnetic field between the outer magnetic pole 2 and the inner magnetic pole 3 tends to be distributed towards the magnetic conduction assembly 4 with high magnetic permeability, the magnetic field direction is guided to horizontally deviate, a horizontal magnetic field which is distributed uniformly is formed between the outer magnetic pole 2 and the inner magnetic pole 3, magnetic induction lines near the target are basically parallel to the target, so that the plasma is more uniform in corrosion of the target under the influence of the uniformly distributed horizontal magnetic field, deep V-shaped depressions in the corrosion appearance of the target are avoided, and the utilization rate of the target is improved.
This application embodiment surrounds into the accommodation space through outer magnetic pole on the backplate, and interior magnetic pole sets up in the accommodation space to be provided with the magnetic conduction subassembly between outer magnetic pole and interior magnetic pole. Because the magnetic conduction assembly is arranged between the outer magnetic pole and the inner magnetic pole, the magnetic conduction assembly can guide the magnetic field to deviate towards the horizontal direction, a horizontal magnetic field which is uniformly distributed is formed between the outer magnetic pole and the inner magnetic pole, magnetic induction lines near the target are basically parallel to the target, so that the plasma can corrode the target more uniformly under the influence of the horizontal magnetic field which is uniformly distributed, deep V-shaped depressions in the corrosion appearance of the target are avoided, the utilization rate of the target is greatly improved, particularly, the application cost is greatly reduced for the condition of titanium or gold and other precious metal targets. In addition, the target material is uniformly corroded, so that the maintenance frequency of a process chamber can be greatly reduced, the process regulation and control complexity can be greatly reduced, and the film deposition uniformity is improved.
It should be noted that, the embodiments of the present application are not limited to the specific implementation of the outer magnetic pole 2 and the inner magnetic pole 3, and the outer magnetic pole 2 and the inner magnetic pole 3 may be uniformly arranged by using a plurality of magnetic columns, and the connection manner between the outer magnetic pole and the back plate 1 is also not limited. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.
In an embodiment of the present application, as shown in fig. 1 and 2, the N pole and the S pole of the outer magnetic pole 2 and the inner magnetic pole 3 are both disposed along a first direction, and polarities of ends of the outer magnetic pole 2 and the inner magnetic pole 3 far away from the back plate 1 are opposite, and the first direction is perpendicular to the bottom surface of the back plate 1. Specifically, the outer magnetic pole 2 and the inner magnetic pole 3 may both adopt a rectangular strip structure, and the N pole and the S pole of the outer magnetic pole 2 and the inner magnetic pole 3 may both be disposed along a first direction, the first direction is perpendicular to the bottom surface of the backplate 1, for example, the N pole of the outer magnetic pole 2 is disposed away from the bottom surface of the backplate 1, and the S pole of the outer magnetic pole 2 is disposed close to the bottom surface of the backplate 1; the S pole of the inner magnetic pole 3 is far away from the bottom surface of the back plate 1, and the N pole of the inner magnetic pole 3 is close to the bottom surface of the back plate 1. By adopting the design, the N pole of the outer magnetic pole 2 and the S pole of the inner magnetic pole 3 can form arc-shaped magnetic induction lines, and the magnetic conduction assembly 4 is adopted to guide the arc-shaped magnetic induction lines so as to guide the magnetic induction lines to shift towards the horizontal direction. The outer magnetic pole 2 and the inner magnetic pole 3 are simple in structure, so that the magnetic field distribution is simple, the magnetic field improvement effect can be greatly improved, and the utilization rate of the target material is further improved.
In the present embodiment, the arrangement of the outer pole 2 and the inner pole 3 is not limited, and for example, the arrangement of the outer pole 2 and the inner pole 3 may be interchanged. Therefore, the setting can be adjusted by the person skilled in the art according to the actual situation.
In an embodiment of the present application, as shown in fig. 1 and 2, the magnetic conductive element 4 and the outer magnetic pole 2 and/or the inner magnetic pole 3 have a predetermined distance therebetween, and the predetermined distance is adjustable. Specifically, a preset distance is formed between the outer poles 2 of the magnetic conducting component 4, and the preset distance can be set in an adjustable manner, for example, the magnetic conducting component 4 is detachably connected with the back plate 1, so that the distance between the magnetic conducting component 4 and the outer poles 2 can be adjusted; have between magnetic conduction subassembly 4 and the interior magnetic pole 3 and preset the interval, should preset the adjustable setting of interval, adopt the dismantlement mode to be connected for example between magnetic conduction subassembly 4 and the backplate 1 to make the distance between magnetic conduction subassembly 4 and the interior magnetic pole 3 adjustable. Furthermore, two magnetic conduction assemblies 4 can be arranged between any two adjacent outer magnetic poles 2 and inner magnetic poles 3, and the two magnetic conduction assemblies 4 are respectively close to the outer magnetic poles 2 and the inner magnetic poles 3, so that the preset distances between the magnetic conduction assemblies 4 and the outer magnetic poles 2 and the inner magnetic poles 3 can be respectively adjusted. By adopting the design, the embodiment of the application can be adjusted according to different process requirements, for example, the distribution mode of the outer magnetic pole 2 and the inner magnetic pole 3 is adjusted, so that the applicability and the application range of the embodiment of the application are greatly improved.
It should be noted that the embodiment of the present application does not limit the connection manner between the magnetic conductive assembly 4 and the back plate 1, for example, the outer magnetic pole 2 and the inner magnetic pole 3 may also be detachably connected to the back plate 1, so as to implement the adjustable setting of the preset distance. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.
In an embodiment of the present application, as shown in fig. 1 and 2, one end of the magnetic conductive assembly 4 is connected to the back plate 1 through a plurality of fasteners 5, and the plurality of fasteners 5 are disposed on the back plate 1 in a penetrating manner and are adjustable in position, so that the predetermined distance is adjustable. Specifically, a plurality of mounting holes may be formed in the back plate 1 along the extending direction of the outer magnetic pole 2, a plurality of fasteners 5 penetrate through the mounting holes and are connected to one end of the magnetic conductive assembly 4, and the plurality of fasteners are, for example, bolts, but the embodiment of the present application is not limited thereto. Further, the backplate 1 is last to have seted up multiseriate mounting hole, and multiseriate mounting hole all arranges along the extending direction of outer magnetic pole 2, but different with the distance of outer magnetic pole 2, and a plurality of fasteners 5 are installed in a certain mounting hole to realize the adjustable setting of the predetermined interval between magnetic conduction subassembly 4 and the outer magnetic pole 2. When the adjustable setting of interval is predetermine between magnetic conduction subassembly 4 and interior magnetic pole 3 to needs make, can make the square worker who sets up multiseriate mounting hole equally to multiseriate mounting hole all arranges along the extending direction of interior magnetic pole 3 this moment, so that a plurality of fasteners 5 set up the position adjustable on backplate 1, thereby make the adjustable setting of interval of predetermineeing between magnetic conduction subassembly 4 and the interior magnetic pole 3. By adopting the design, the structure of the embodiment of the application is simple, and the application and maintenance cost can be greatly reduced.
It should be noted that, in the embodiments of the present application, it is not limited that the magnetic conductive assembly 4 and the back plate 1 are connected by the fastening member 5, for example, the magnetic conductive assembly 4 and the back plate 1 are fixed by being engaged with each other, as long as the installation position of the magnetic conductive assembly 4 between the back plates 1 is adjustable. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.
In an embodiment of the present application, as shown in fig. 1 and fig. 2, the magnetic conductive assembly 4 includes an outer magnetic conductive strip 41 and an inner magnetic conductive strip 42, the outer magnetic conductive strip 41 extends along the extending direction of the outer magnetic pole 2 and has a predetermined distance from the inner sidewall of the outer magnetic pole 2; the inner magnetic conductive strip 42 extends along the extending direction of the inner magnetic pole 3 and has a preset distance with the side wall of the inner magnetic pole 3. Optionally, the preset distance is greater than zero and equal to or less than twice the width of the outer pole 2 or the inner pole 3.
As shown in fig. 1 and 2, the magnetic conductive assembly 4 includes an outer magnetic conductive strip 41 and an inner magnetic conductive strip 42, and both the outer magnetic conductive strip 41 and the inner magnetic conductive strip 42 may be made of soft magnetic material, for example, stainless steel such as SUS410 or SUS440, but the present disclosure is not limited thereto, and only the outer magnetic conductive strip 41 and the inner magnetic conductive strip 42 have magnetic conductivity and corrosion resistance. The outer magnetic strip 41 and the inner magnetic strip 42 both adopt rectangular plate-shaped structures, wherein the outer magnetic strip 41 can be arranged close to the outer magnetic pole 2 and extend along the extension direction of the outer magnetic pole 2, so that a preset distance is formed between the outer magnetic strip 41 and the outer magnetic pole 2 all the time; the inner magnetic conductive strip 42 may be disposed near the inner magnetic pole 3 and extend along the extending direction of the inner magnetic pole 3, so that a preset distance is always provided between the inner magnetic conductive strip 42 and the inner magnetic pole 3. By adopting the design, the inner magnetic conduction strip and the outer magnetic conduction strip are arranged between the outer magnetic pole 2 and the inner magnetic pole 3, so that the magnetic field can be further guided to deviate towards the horizontal direction, the corrosion uniformity of the target material is further improved, the application cost is further reduced, and the economic benefit is improved. In addition, due to the fact that the stainless steel is adopted for manufacturing, application and maintenance costs of the embodiment of the application can be reduced, and the service life can be prolonged. Further, the preset spacing must be larger than zero to achieve guidance of the magnetic field between the outer magnetic pole 2 and the inner magnetic pole 3. And because the magnetic field intensity and distribution generated by the outer magnetic pole 2 and the inner magnetic pole 3 with different widths are different, the preset distance can be less than or equal to two times of the width of the outer magnetic pole 2 and the inner magnetic pole 3, the width of the outer magnetic pole 2 and the inner magnetic pole 3 is the section width along the second direction, the second direction is parallel to the bottom surface of the back plate 1 and is perpendicular to the first direction, and the preset distance is set corresponding to the width of the outer magnetic pole 2 and the width of the inner magnetic pole 3, so that the guiding effect of the magnetic field can be greatly improved, and the applicability and the application range of the embodiment of the application can be greatly improved.
It should be noted that the specific value of the preset distance is not limited in the embodiments of the present application, for example, the preset distance may be set corresponding to the materials of the outer magnetic pole 2 and the inner magnetic pole 3. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.
In an embodiment of the present application, as shown in fig. 1 and 2, the magnetic conductive member 4 has a first height relative to the back plate 1, the outer magnetic pole 2 and the inner magnetic pole 3 have a second height relative to the back plate 1, and a predetermined ratio is formed between the first height and the second height. Optionally, the preset ratio is greater than or equal to 0.5 and less than or equal to 1.5.
As shown in fig. 1 and fig. 2, the magnetic conductive assembly 4 has a first height relative to the back plate 1, that is, the outer magnetic conductive strip 41 and the inner magnetic conductive strip 42 both have the first height along the first direction, but the heights of the outer magnetic conductive strip 41 and the inner magnetic conductive strip 42 are not limited to be the same in the embodiments of the present invention. The outer magnetic pole 2 and the inner magnetic pole 3 have a second height relative to the back plate 1, that is, the outer magnetic pole 2 and the inner magnetic pole 3 have a second height along the first direction, but the heights of the outer magnetic pole 2 and the inner magnetic pole 3 are not limited to be the same in the embodiments of the present application. The height of the outer magnetic conductive strip 41 has a predetermined ratio to the height of the outer magnetic pole 2, for example, the height of the outer magnetic conductive strip 41 may be between one half to three halves of the height of the outer magnetic pole 2, that is, the predetermined ratio may be greater than or equal to 0.5 and less than or equal to 1.5. The height of the inner magnetic conductive strip 42 and the height of the inner magnetic pole 3 have a predetermined ratio, for example, the height of the inner magnetic conductive strip 42 may be between one half to three halves of the height of the inner magnetic pole 3, i.e. the predetermined ratio may be greater than or equal to 0.5 and less than or equal to 1.5. By adopting the design, the specific height of the magnetic conduction component 4 can be set according to different requirements, so that the applicability and the application range of the embodiment of the application are improved, and the embodiment of the application can be applied to different process requirements. Optionally, the width of the outer magnetic conductive strip 41 may be smaller than the width of the outer magnetic pole 2, and the width of the inner magnetic conductive strip 42 is smaller than the width of the inner magnetic pole 3, so as to avoid the magnetic field offset being excessively guided by the magnetic conductive assembly 4, thereby further improving the target utilization ratio of the embodiment of the present application.
In an embodiment of the present application, as shown in fig. 1 and 2, the outer pole 2 includes a linear magnetic stripe 21 and an arc magnetic stripe 22, the two linear magnetic stripes 21 are arranged in parallel, and end portions of the two linear magnetic stripes 21 and two end portions of the arc magnetic stripe 22 are integrally formed to surround the accommodating space 20; the inner magnetic pole 3 is arranged in parallel with the linear magnetic strip 21; the two outer magnetic conductive strips 41 are respectively arranged close to the two linear magnetic strips 21 and are arranged in parallel with the linear magnetic strips 21; the two inner magnetic conductive strips 42 are respectively arranged close to two sides of the inner magnetic pole 3 and are arranged in parallel with the inner magnetic pole 3.
As shown in fig. 1 and 2, the outer magnetic pole 2 and the inner magnetic pole 3 may be made of permanent magnetic materials, such as N45 magnet and N52 magnet, but the embodiment of the present invention is not limited thereto as long as both are made of permanent magnetic materials. Outer magnetic pole 2 can include two straight line magnetic stripes 21 and arc magnetic stripe 22, and straight line magnetic stripe 21 and arc magnetic stripe 22 surround into the long circle structure jointly to surround into accommodation space 20, and straight line magnetic stripe 21 and arc magnetic stripe 22 can adopt integrative shaping structure, so that this application embodiment simple structure, thereby reduce application and maintenance cost by a wide margin. The inner magnetic pole 3 is specifically a rectangular body structure, for example, the structure of the inner magnetic pole is the same as that of the linear magnetic strip 21, and the inner magnetic pole 3 is arranged in the middle of the accommodating space 20 and is arranged in parallel with the linear magnetic strip 21, so that the application and maintenance cost is further reduced. The two outer magnetic conductive strips 41 can be arranged in the accommodating space 20, are respectively close to the inner sides of the two linear magnetic strips 21, and are both arranged in parallel with the linear magnetic strips 21; two interior magnetic stripes 42 of leading set up in accommodation space 20 equally, are close to the both sides setting of interior magnetic pole 3 respectively to all with straight line magnetic stripe 21 parallel arrangement, so that have interior magnetic stripe 42 of leading and lead magnetic stripe 41 outward simultaneously between arbitrary adjacent outer magnetic pole 2 and the interior magnetic pole 3. By adopting the design, the application and maintenance cost of the embodiment of the application can be reduced, the existing magnetron mechanism can be rapidly improved, the utilization rate of the target material can be greatly improved, and the process uniformity of film deposition can be improved.
It should be noted that the specific shapes of the outer magnetic pole 2 and the inner magnetic pole 3 are not limited in the embodiments of the present application, and those skilled in the art can adjust the specific shapes of the outer magnetic pole 2 and the inner magnetic pole 3 in an actual situation.
In one embodiment of the present application, as shown in fig. 1 and 2, the magnetron mechanism is fixedly disposed at the top of the process chamber, or the magnetron mechanism is movably disposed at the top of the process chamber and can rotate at the top of the process chamber. In particular, the magnetron mechanism may be fixedly disposed at the top of the process chamber so that embodiments of the present application may be applied to rectangular planar targets. The magnetron mechanism can also be arranged at the top of the process chamber through a driving mechanism and can rotate automatically under the driving of the driving mechanism, so that the embodiment of the application can be applied to a circular plane target. By adopting the design, the applicability and the application range of the embodiment of the application can be improved, the corrosion rate of the target material is basically the same due to the uniform magnetic field intensity, and the film forming uniformity on the wafer is correspondingly improved, so that the utilization rate of the target material and the process film deposition effect are obviously optimized.
To further illustrate the benefits of the embodiments of the present application, a detailed implementation of the present application and simulation are described below with reference to the accompanying drawings. Specifically, the outer magnetic pole 2 and the inner magnetic pole 3 both adopt N45 magnet strips with a width of 17 mm and a height of 37 mm, and the distance between the outer magnetic pole 2 and the inner magnetic pole 3 can be set to 45 mm, the width of the inner magnetic conducting strip and the width of the outer magnetic conducting strip are 6 mm, the height of the inner magnetic conducting strip and the outer magnetic pole is 47 mm, the preset distance between the outer magnetic conducting strip 41 and the outer magnetic pole 2 is 6 mm, and the preset distance between the inner magnetic conducting strip 42 and the inner magnetic pole 3 is 6 mm. As shown in fig. 3A and 3B, after the magnetic conductive assembly 4 is introduced, the magnetic field distribution between the outer magnetic pole 2 and the inner magnetic pole 3 tends to be uniform, and the magnetic induction force also tends to be horizontal. Due to the different magnetic permeability of the magnetic conductive component 4 and the medium such as air, water and the like, the magnetic field tends to be distributed more toward the magnetic conductive component 4 with high magnetic permeability. Therefore, the magnetic conduction assembly 4 reduces the magnetic field component in the vertical direction near the outer magnetic pole 2 and the inner magnetic pole 3, guides the magnetic field direction to shift horizontally, and forms a horizontal magnetic field which is distributed more uniformly between the outer magnetic pole 2 and the inner magnetic pole 3.
As shown in fig. 3C, since the magnetic permeable member 4 is added in this embodiment, the magnetic permeable member 4 having a high magnetic permeability can change the direction of the magnetic field, and the original direction of the magnetic field can be shifted toward the magnetic permeable member 4. Compared with the fig. 3A without the magnetic conductive assembly 4, the magnetic field intensity distribution between the outer magnetic pole 2 and the inner magnetic pole 3 is more uniform, and the magnetic induction lines near the target 102 are substantially parallel to the target 102, so that the plasma is more uniform in corrosion to the target 102 under the influence of the magnetic field in the uniform horizontal direction, the corrosion rate of the target 102 between the outer magnetic pole 2 and the inner magnetic pole 3 is substantially equivalent, and the utilization rate of the target 102 is improved.
Based on the same inventive concept, an embodiment of the present application provides a semiconductor process apparatus, a schematic structural diagram of which is shown in fig. 4, and the semiconductor process apparatus includes: a process chamber 100 and a magnetron mechanism 200 as provided in the above embodiments, the magnetron mechanism 200 being disposed at the top of the process chamber 100. Specifically, the magnetron mechanism 200 and the target 102 are sequentially disposed from top to bottom at the top of the process chamber 100, deionized water is filled between the magnetron mechanism 200 and the target 102, and a carrying device 101 for carrying a wafer is further disposed in the process chamber 100. By adopting the magnetron mechanism 200 in each of the above embodiments, the magnetic induction lines near the target 102 are substantially parallel to the target 102, so that the plasma can erode the target 102 more uniformly under the influence of the uniformly distributed horizontal magnetic field, and the erosion appearance of the target 102 is prevented from generating deep V-shaped depressions, thereby greatly improving the utilization rate of the target 102. In addition, the uniform erosion of the target 102 can also significantly reduce the maintenance frequency of the process chamber 100 and the process control complexity, thereby improving the film deposition uniformity.
By applying the embodiment of the application, at least the following beneficial effects can be realized:
this application embodiment encloses into the accommodation space through the outer magnetic pole on the backplate, and the inner magnetic pole sets up in the accommodation space to be provided with the magnetic conduction subassembly between outer magnetic pole and inner magnetic pole. Because the magnetic conduction assembly is arranged between the outer magnetic pole and the inner magnetic pole, the magnetic conduction assembly can guide the magnetic field to deviate towards the horizontal direction, a horizontal magnetic field which is uniformly distributed is formed between the outer magnetic pole and the inner magnetic pole, magnetic induction lines near the target are basically parallel to the target, so that the plasma can corrode the target more uniformly under the influence of the horizontal magnetic field which is uniformly distributed, deep V-shaped depressions in the corrosion appearance of the target are avoided, the utilization rate of the target is greatly improved, particularly, the application cost is greatly reduced for the condition of titanium or gold and other precious metal targets. In addition, the target material is uniformly corroded, so that the maintenance frequency of a process chamber can be greatly reduced, the process regulation and control complexity can be greatly reduced, and the film deposition uniformity is improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.

Claims (10)

1. A magnetron mechanism applied to semiconductor process equipment is characterized by comprising: the magnetic conduction assembly comprises a back plate, an outer magnetic pole, an inner magnetic pole and a magnetic conduction assembly;
the outer magnetic pole is arranged on the bottom surface of the back plate, and an accommodating space is enclosed on the bottom surface; the inner magnetic pole is arranged on the bottom surface of the back plate and is positioned in the accommodating space;
the magnetic conduction assembly is arranged on the bottom surface of the back plate, is positioned between the two adjacent outer magnetic poles and the inner magnetic pole and is used for guiding the uniform distribution of the magnetic field intensity.
2. The magnetron mechanism of claim 1 wherein the magnetically permeable assembly extends in the direction of extension of the outer and/or inner poles and the ends of the outer and inner poles remote from the back plate are of opposite polarity.
3. The magnetron mechanism of claim 2, wherein the magnetically permeable assembly has a predetermined spacing from the outer pole and/or the inner pole, and wherein the predetermined spacing is adjustably set.
4. The magnetron mechanism of claim 3, wherein one end of the magnetically conductive assembly is connected to the back plate by a plurality of fasteners, the plurality of fasteners are disposed through the back plate and are adjustable in position to allow the predetermined spacing to be adjustably set.
5. The magnetron mechanism as claimed in claim 4, wherein the magnetic conductive assembly includes an outer magnetic conductive strip and an inner magnetic conductive strip, the outer magnetic conductive strip extends along the extension direction of the outer magnetic pole and has the predetermined distance from the inner side wall of the outer magnetic pole; the inner magnetic conduction strip extends along the extension direction of the inner magnetic pole, and the preset distance is reserved between the inner magnetic conduction strip and the side wall of the inner magnetic pole.
6. The magnetron mechanism of claim 5, wherein the predetermined spacing is greater than zero and equal to or less than twice the width of the outer pole or the inner pole; and the width of the outer magnetic conduction strip is smaller than that of the outer magnetic pole, and the width of the inner magnetic conduction strip is smaller than that of the inner magnetic pole.
7. The magnetron mechanism of claim 3 wherein the magnetically permeable member has a first height and the outer and inner poles have a second height, the first height and the second height having a predetermined ratio therebetween.
8. The magnetron mechanism of claim 7, wherein the predetermined ratio is 0.5 or greater and 1.5 or less.
9. The magnetron mechanism as claimed in claim 5, wherein said outer pole includes two linear magnetic strips and two arc magnetic strips, said two linear magnetic strips are disposed in parallel, and end portions of said two linear magnetic strips are distributed integrally with two end portions of said two arc magnetic strips to surround said accommodating space; the inner magnetic pole is arranged in parallel with the linear magnetic strip; the two outer magnetic conductive strips are respectively close to the two linear magnetic strips and are arranged in parallel with the linear magnetic strips; the two inner magnetic conduction strips are respectively close to two sides of the inner magnetic pole and are arranged in parallel with the inner magnetic pole.
10. Semiconductor processing equipment comprising a process chamber and a magnetron mechanism as claimed in any one of claims 1 to 9, the magnetron mechanism being fixedly arranged at the top of the process chamber or being movably arranged at the top of the process chamber and being capable of self-rotation at the top of the process chamber.
CN202210198432.2A 2022-03-02 2022-03-02 Semiconductor process equipment and magnetron mechanism thereof Pending CN114582690A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210198432.2A CN114582690A (en) 2022-03-02 2022-03-02 Semiconductor process equipment and magnetron mechanism thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210198432.2A CN114582690A (en) 2022-03-02 2022-03-02 Semiconductor process equipment and magnetron mechanism thereof

Publications (1)

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CN114582690A true CN114582690A (en) 2022-06-03

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