CN114574811A

CN114574811A - Deposition apparatus, film forming method, and method for manufacturing electronic device

Info

Publication number: CN114574811A
Application number: CN202111365775.5A
Authority: CN
Inventors: 砂川贵宏; 佐藤功康
Original assignee: Canon Tokki Corp
Current assignee: Canon Tokki Corp
Priority date: 2020-11-30
Filing date: 2021-11-18
Publication date: 2022-06-03
Anticipated expiration: 2041-11-18
Also published as: CN114574811B; KR20220076311A; JP2022086589A; JP7252933B2

Abstract

The invention provides a technology capable of cooling a monitoring device of a vapor deposition source. A vapor deposition device is provided with: a deposition source for discharging a deposition material to the substrate; and a monitoring unit that monitors a discharge state of a vapor deposition material from the vapor deposition source, wherein the vapor deposition device includes a base member on which the monitoring unit is mounted, and the base member has a flow path through which a cooling medium flows.

Description

Deposition apparatus, film forming method, and method for manufacturing electronic device

Technical Field

The invention relates to a deposition apparatus, a film forming method, and a method for manufacturing an electronic device.

Background

In the production of an organic EL display or the like, a vapor deposition substance such as an organic material or a metal material is deposited on a substrate using a mask. For the purpose of controlling the thickness of a vapor deposition material deposited on a substrate, a vapor deposition device provided with a monitoring device for monitoring the state of emission of the vapor deposition material from a vapor deposition source has been proposed (patent documents 1 and 2).

Documents of the prior art

Patent literature

Patent document 1: japanese patent laid-open publication No. 2019-137877

Patent document 2: japanese patent laid-open publication No. 2019-99870

Disclosure of Invention

Problems to be solved by the invention

The monitoring device may be affected by heat of the deposition source, and the monitoring accuracy may be lowered. For example, in a monitoring device including a crystal oscillator, the emission state is monitored by using the fact that the vibration frequency changes according to the amount of the vapor deposition material adhering to the crystal oscillator. The crystal oscillator changes its vibration characteristics according to a change in temperature, and the correlation between the change in the vibration frequency and the discharge state changes. Therefore, when the temperature of the crystal oscillator is increased by the heat of the deposition source, the monitoring accuracy is lowered.

The invention provides a technology capable of cooling a monitoring device of a vapor deposition source.

Means for solving the problems

According to the present invention, there is provided a vapor deposition device including:

a deposition source for discharging a deposition material to the substrate; and

a monitoring means for monitoring the discharge state of the vapor deposition material from the vapor deposition source,

it is characterized in that the preparation method is characterized in that,

the vapor deposition device includes a base member on which the monitoring member is mounted,

the base member has a flow path through which a cooling medium flows.

Further, according to the present invention, there is provided a film deposition apparatus including:

a conveying device for conveying the substrate; and

a vapor deposition device for vapor depositing a vapor deposition material on the substrate,

the film forming apparatus is an in-line type film forming apparatus that performs vapor deposition while conveying the substrate,

the vapor deposition device is provided with:

a vapor deposition source extending in a direction intersecting a transport direction of the substrate and emitting a vapor deposition substance to the substrate;

a monitoring means for monitoring a discharge state of the vapor deposition material from the vapor deposition source; and

a base member on which the monitoring unit is mounted,

the base member has a flow path through which a cooling medium flows.

Further, according to the present invention, there is provided a film formation method using the film formation apparatus, the film formation method including:

a conveying step of conveying the substrate by the conveying device; and

and a vapor deposition step of performing vapor deposition on the substrate conveyed by the vapor deposition device.

Further, according to the present invention, there is provided a method for manufacturing an electronic device using the film formation apparatus, the method comprising:

a conveying step of conveying the substrate by the conveying device; and

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present invention, a technique capable of cooling a monitoring device of a vapor deposition source can be provided.

Drawings

Fig. 1 is a schematic view of a film deposition apparatus according to an embodiment of the present invention.

Fig. 2(a) and 2(B) are explanatory views of the operation of the film forming apparatus of fig. 1.

Fig. 3 is a schematic view of a vapor deposition device.

Fig. 4 is a sectional view of the driving unit.

Fig. 5(a) is an explanatory view of the flow path, and fig. 5(B) is a view showing a deformation mode of the flexible tube.

Fig. 6 is a perspective view of the monitoring device and the structure around the monitoring device.

Fig. 7 is a perspective view of the structure of the periphery of fig. 6 viewed from the opposite side.

Fig. 8(a) is an overall view of the organic EL display device, and fig. 8(B) is a view showing a cross-sectional structure of 1 pixel.

Detailed Description

Hereinafter, embodiments will be described in detail with reference to the drawings. The following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiments, all of the plurality of features are not necessarily essential to the invention, and a plurality of features may be arbitrarily combined. In the drawings, the same or similar components are denoted by the same reference numerals, and redundant description thereof is omitted.

< overview of film Forming apparatus >

Fig. 1 is a schematic view of a film deposition apparatus 1 according to an embodiment of the present invention. In each drawing, arrow X and arrow Y indicate horizontal directions perpendicular to each other, and arrow Z indicates a vertical direction (vertical direction). The film forming apparatus 1 includes a transport device 2 and a plurality of

vapor deposition devices

3A and 3B (hereinafter, the two are collectively referred to as the vapor deposition device 3 or are not distinguished from each other). The plurality of

vapor deposition devices

3A and 3B are arranged in line in the X direction, and the transport device 2 is arranged above the

vapor deposition devices

3A and 3B.

The transfer device 2 includes a transfer chamber 20, and the transfer chamber 20 has a transfer chamber 20c formed therein and maintained at a vacuum state during use. An inlet port 20a is provided at one end portion of the transfer chamber 20 in the X direction, and an outlet port 20b is provided at the other end portion, and the processing object is fed into the transfer chamber 20c from the inlet port 20a, and is discharged to the outside from the outlet port 20b after the processing. A plurality of conveying rollers 21 aligned in the X direction are provided in the conveying chamber 20 c. The conveying rollers 21 are arranged in two rows separated in the Y direction. Each of the conveying rollers 21 rotates about a rotation axis in the Y direction. The object to be conveyed is placed on the rows of the two rows of conveying rollers 21 at both ends in the Y direction, and is conveyed in a horizontal posture in the X direction by the rotation of the conveying rollers 21. In the present embodiment, a roller mechanism is used as a conveying mechanism for the processing object, but other types of conveying mechanisms such as magnetic levitation conveyance may be used.

The vapor deposition device 3 includes a source chamber 5, and the source chamber 5 forms an internal space 3a maintained in vacuum during use. The source chamber 5 has a box shape having an opening 3b formed in an upper portion thereof, and the transfer chamber 20c communicates with the internal space 3a via the opening 3 b. The vapor deposition device 3 includes a vapor deposition source 6 that discharges a vapor deposition material upward. The vapor deposition source 6 of the present embodiment is a so-called line source, and extends in a direction (Y direction orthogonal to the transport direction in the present embodiment) intersecting the transport direction (X direction) of the processing object transported by the transport device 2. The vapor deposition source 6 includes a crucible for storing a material for the vapor deposition material, a heater for heating the crucible, and the like, and heats the material to discharge the vapor deposition material as vapor to the transport chamber 20 c.

The vapor deposition device 3 includes a shutter 7 and a rotation unit 8 for rotating the shutter 7. The rotating unit 8 rotates the shutter 7 on a moving track including a position between the vapor deposition source 6 and the processing object conveyed in the conveying chamber 20 c. The movement path is a path along which the flapper 7 moves, and is typically a circular path, but may be an elliptical path or a linear path by adding another movable portion (link mechanism or the like) to the turning unit 8. In the present embodiment, the shutter 7 extends along the extending direction of the vapor deposition source 6 (Y direction in the present embodiment), and the rotation unit 8 rotates the shutter 7 about the rotation center along the extending direction of the vapor deposition source 6 (Y direction in the present embodiment). In the present embodiment, two sets of shutters 7 and rotating units 8 are provided for one vapor deposition source 6. The two sets of shutters 7 and the rotating unit 8 are disposed apart from each other in a direction intersecting the extending direction of the vapor deposition source 6 (in the present embodiment, in the X direction orthogonal to the extending direction). Further, the discharge port of the vapor deposition source 6 can be opened and closed with respect to the transport chamber 20c by the two shutters 7, and the discharge of the vapor deposition material into the transport chamber 20c and the incidence angle can be restricted.

The vapor deposition device 3 is also provided with a monitoring device 9 for monitoring the discharge state of the vapor deposition material from the vapor deposition source 6. A deposition preventing plate 4 is provided above the deposition source 6 and around the baffle plate 7 to suppress deposition of the deposition material around the deposition preventing plate. The shield plate 4 has a square tubular shape opened in the vertical direction and is disposed from the internal space 3a to the transfer chamber 20 c.

Fig. 2(a) and 2(B) are explanatory views showing an example of the operation of the film formation apparatus 1. The film forming apparatus 1 is an In-line (In-line) type film forming apparatus capable of performing a film forming method of depositing a deposition material on a processing object by a deposition apparatus 3 while conveying the processing object by a conveyor 2 (conveying step). The film formation apparatus 1 can be applied to a manufacturing apparatus for manufacturing an electronic device such as a display device (flat panel display), a thin film solar cell, an organic photoelectric conversion device (organic thin film imaging device), or an optical device, and performing a method for manufacturing the electronic device. In fig. 2(a) and 2(B), the substrate 10 is illustrated as an object to be processed. The substrate 10 is conveyed together with the mask 11, and the vapor deposition material is deposited on the substrate 10 through the mask 11 positioned below the substrate 10, whereby a thin film of the vapor deposition material having a predetermined pattern can be formed on the substrate 100. The substrate 10 is a plate made of a material such as glass, resin, or metal, and the deposition material is an organic material or an inorganic material (metal, metal oxide, or the like).

In the present embodiment, the plurality of

vapor deposition devices

3A and 3B are arranged in the transport direction of the substrate 10. When different types of vapor deposition materials are discharged by the

vapor deposition devices

3A and 3B, different vapor deposition materials can be successively deposited on the substrate 10. The number of the vapor deposition devices 3 is not limited to 2, and may be 1, or 3 or more.

Fig. 2(a) schematically shows a mode in which the shutter 7 of the vapor deposition device 3A is opened to discharge the vapor deposition material 12 onto the substrate 10 positioned above the vapor deposition device 3A. In fig. 2a, the shutter 7 of the vapor deposition device 3B is closed, and the shutter 7 is located between the vapor deposition source 6 and the substrate 10 conveyed in the conveyance chamber 20c (however, in the embodiment of fig. 2a, the substrate 10 is not present above the vapor deposition device 3B). The vapor deposition material is restricted from reaching the transfer chamber 20c from the vapor deposition source 6 of the vapor deposition device 3B.

Fig. 2(B) schematically shows a mode in which the substrate 10 on which the vapor deposition substance is deposited by the vapor deposition device 3A reaches above the vapor deposition device 3B. The shutter 7 of the vapor deposition device 3B is opened, and the vapor deposition material 12 is discharged onto the substrate 10 positioned above the vapor deposition device 3B. In fig. 2(B), the shutter 7 of the vapor deposition device 3A is closed, and the shutter 7 is located between the vapor deposition source 6 and the substrate 10 conveyed in the conveyance chamber 20c (however, in the embodiment of fig. 2(B), the substrate 10 is not present above the vapor deposition device 3A). The vapor deposition material is restricted from reaching the transfer chamber 20c from the vapor deposition source 6 of the vapor deposition device 3A.

In this way, in the present embodiment, the vapor deposition material can be continuously vapor-deposited on the substrate 10 by the plurality of

vapor deposition devices

3A and 3B. In the example of fig. 2(a) and 2(B), the shutter 7 is opened and closed to release and block the vapor deposition material from the vapor deposition source 6 to the transport chamber 20 c. However, the operation of the shutter 7 is not limited to this, and the amount of vapor deposition of the vapor deposition material onto the substrate 10 per unit time and the angle of incidence of the vapor deposition material onto the substrate 10 may be controlled by limiting the range of discharge of the vapor deposition material by setting the opening of the two shutters 7 to an intermediate opening, or by setting one of the two shutters 7 to the open position and the other to the closed position.

< baffle and rotating unit >

The configurations of the flapper 7 and the rotating unit 8 will be described with reference to fig. 3 to 5(B) in addition to fig. 1 to 2 (B). Reference is primarily made to fig. 3. Fig. 3 is a schematic view showing the internal structure of the vapor deposition device 3, and corresponds to a cross-sectional view taken along line a-a in fig. 2 (a). The rotation unit 8 includes a pair of drive units DU1 and DU2 (hereinafter, both are collectively referred to as drive units DU or are not distinguished from each other) and a support member 30 supported by the drive units DU1 and DU2, and rotates the shutter 7 about a rotation center line AL in the extending direction (Y direction in the present embodiment) of the vapor deposition source 6. By rotating the shutter 7, the vapor deposition source 6 can be opened and closed in a smaller space surrounded by the deposition preventing plate 4 than in a structure in which the shutter is moved in parallel.

The support member 30 is a member that supports the shutter 7, and includes a mounting portion 31 that extends along the extending direction (Y direction in the present embodiment) of the vapor deposition source 6, and a pair of arm portions 32 that are fixed to respective ends of the mounting portion 31 in the extending direction. The attachment portion 31 is formed of a plate-like member having a roof-like cross-sectional shape, and is bridged by a pair of arm portions 32 separated in the longitudinal direction thereof. The baffle 7 is replaceably attached to the attachment portion 31 by a fixing structure (not shown) such as a bolt fastening structure. Due to the use of the vapor deposition device 3, the vapor deposition substance may adhere to the shutter 7, or the shutter 7 may be deteriorated by the influence of heat, so that the life of the shutter 7 is shorter than that of the rotation unit 8. By making the flapper 7 replaceable, the rotating unit 8 can be used for a longer time than a structure in which the rotating unit 8 and the flapper 7 are not separable.

As shown in fig. 5(a) and the like, the shutter 7 is attached to the inside of the mounting portion 31 in the radial direction R of the rotation center line AL. Since the shutter 7 is interposed between the mounting portion 31 and the vapor deposition source 6, the influence of adhesion of the vapor deposition material to the mounting portion 31 and heat can be reduced, and the life of the mounting portion 31 can be extended. In the case of the present embodiment, as shown in fig. 5 a and the like, the cross-sectional shape (X-Z plane sectional shape) of the baffle 7 on the plane orthogonal to the rotation center line AL has an arc-like cross-sectional shape protruding outward in the radial direction R of the rotation center line AL. In other words, the shutter 7 has a housing shape in which the surface of the shape protruding in a direction away from the vapor deposition source 6 is a curved surface. Compared with the configuration in which the shutter 7 has a flat plate shape, the shutter 7 of the present embodiment can increase its rotation range (movement locus length) without interfering with the attachment prevention plate 4 in a narrow space surrounded by the attachment prevention plate 4. In the present embodiment, the cross-sectional shape of the baffle 7 has a concentric circular arc shape concentric with the rotation center line AL, but is not limited to this, and may be an eccentric circular arc shape, or may be an arc shape other than a circular arc shape such as an elliptical circular arc shape.

Each arm portion 32 is formed of a plate-like member extending in a direction intersecting the rotation axis direction (Y direction) and extending in a radial direction R along the rotation center line AL which is a direction along the X-Z plane. The arm 32 has one end connected to the mounting portion 31 and the other end connected to the rotating shaft 33 of the drive unit DU. The length of the arm 32 is set so that the movement path of the shutter 7 includes a position between the vapor deposition source 6 and the processing object conveyed in the conveying chamber 20 c.

The shutter 7 is exposed to the heat of the evaporation source 6. In particular, when the deposition material is a metal material, the temperature of the deposition source 6 is high, and the shutter 7 is likely to be at a high temperature. When the shutter 7 is heated to a high temperature, the vapor deposition material adhering to the shutter 7 may be discharged from the shutter 7. Thus, cooling of the baffle 7 is desired. In the case of the present embodiment, the baffle 7 is indirectly cooled by cooling the support member 30 by circulating a cooling medium through the support member 30. The cooling medium is, for example, cooling water. The flow path of the cooling medium will be described with reference to fig. 3 and 5 (a). Fig. 5(a) shows the arm 32 connected to the drive unit DU1, but the same applies to the arm 32 connected to the drive unit DU 2.

The mounting portion 31 of the support member 30 has a flow path 31a formed therein. In the case of a large baffle 7, the length in the longitudinal direction (Y direction in the present embodiment) is long, and as a result, the length in the longitudinal direction (Y direction in the present embodiment) of the mounting portion 31 may be several meters long. The flow path of the cooling medium may be a flow path that penetrates the mounting portion 31 in the longitudinal direction, but this may cause a large temperature difference in the longitudinal direction of the mounting portion 31. In the present embodiment, two independent flow paths 31a are formed in the mounting portion 31. Each flow path 31a has a U-shape extending from one end in the longitudinal direction of the mounting portion 31 to a middle portion in the longitudinal direction of the mounting portion 31 (in the present embodiment, near the center portion CL), and is folded back at the folded-back portion 31b to return to the one end. By forming the flow path 31a by dividing the mounting portion 31 into two in the longitudinal direction, the mounting portion 31 can be cooled more uniformly in the longitudinal direction.

As shown in fig. 5(a), the arm portion 32 has

flow paths

32a and 32b formed therein and communicating with the flow path 31 a. One of the

flow paths

32a and 32b is a flow path for supplying the cooling medium, and the other is a flow path for discharging the cooling medium.

The configuration of the drive unit DU will be described mainly with reference to fig. 3 and 4. Fig. 4 is a sectional view of the periphery of the drive unit DU1, mainly showing the configuration of the drive unit DU 1. Further, the drive unit DU2 has the same configuration as the drive unit DU 1.

The drive unit DU includes a rotary shaft 33, a bearing 34, a drive source 36, and a bearing 37. The rotation shaft 33 is an axis on the rotation center line AL, and forms the rotation center of the flapper 7. The respective rotation shafts 33 of the drive units DU1 and DU2 are arranged coaxially (on the common pivot axis AL). The drive units DU1 and DU2 are disposed on the sides of the vapor deposition source 6 in the extending direction (Y direction in the present embodiment) of the vapor deposition source 6. In other words, vapor deposition source 6 is located between drive unit DU1 and drive unit DU2 in the Y direction. Therefore, the respective rotation shafts 33 of the drive units DU1 and DU2 are separated in the extending direction of the vapor deposition source 6 (Y direction in the present embodiment) and are disposed coaxially with the vapor deposition source 6 on the side of the extending direction.

The rotary shaft 33 is a hollow rotary shaft having an internal space 33a (in the present embodiment, the rotary shaft 33 penetrates) extending in the axial direction (in the Y direction in the present embodiment), and both ends in the axial direction are open. The rotary shaft 33 of the present embodiment is configured by coupling a plurality of members, and includes a shaft member 331 supported by the bearing 34 and a shaft member 332 passed through the drive source 36. The bearing 34 is supported by the wall of the source chamber 5 via a rod 35. The bearing 34 includes a hollow housing 34a and ball bearings 34b supported at both ends of the housing 34a in the axial direction of the rotary shaft 33. The shaft member 331 is fitted to the inner ring of the ball bearing 34 b.

The driving source 36 applies a rotational force to the rotating shaft 33. In the case of the present embodiment, the drive source 36 is a hollow motor, and the shaft member 332 is provided integrally with a rotor thereof. The driving source 36 is disposed outside the source chamber 5, and a flange portion 36a thereof is fixed to a wall portion of the source chamber 5. In the present embodiment, an air-core motor is used as the drive source 36, but the present invention is not limited thereto. For example, the drive source may be a normal motor separated from the rotary shaft 33, and the driving force of the motor may be transmitted to the rotary shaft 33 by a transmission mechanism such as a gear device or a belt transmission mechanism.

The bearing 37 is a bearing that supports an end of the rotating shaft 33. The bearing 37 includes a hollow main body 37a and a disk 37b supported rotatably about a rotation center line AL on the main body 37a, and the main body 37a has an inner space 37c communicating with the inner space 33a of the rotary shaft 33 and extending in the axial direction of the rotary shaft 33. The end of the rotary shaft 33 is connected to the disc 37 b. The bearing 37 is supported by a flange portion 36a of the drive source 36 via a plurality of coupling members 38.

The arm portion 32 of the support member 30 is connected to the rotating shaft 33 so as to close an opening at an end portion of the rotating shaft 33. According to the above configuration, by synchronously driving the drive sources 36 of the drive units DU1 and DU2, the support member 30 rotates about the rotation center line AL, and the flapper 7 rotates. By providing the drive units DU on both sides of the support member 30 in the longitudinal direction, stable operation can be performed as compared with a configuration in which the support member 30 is rotated in a cantilever state by one drive unit DU.

A structure for circulating the cooling medium through the support member 30 will be described with reference to fig. 4. The film forming apparatus 1 includes a circulation device 50 for circulating a cooling medium. The circulation device 50 includes, for example, a tank for storing the cooling medium, a pump for pumping the cooling medium, a heat exchanger for cooling the cooling medium, and the like. The circulation device 50 is connected to the

flow paths

32a and 32b of the arm 32 via the pipe 40. The piping 40 serving as the supply side piping of the cooling medium includes a metal piping 42a, a flexible pipe 41a, and a connection portion 43a connecting these pipes. The piping 40 on the discharge side (return side) of the cooling medium includes a metal piping 42b, a flexible pipe 41b, and a connection portion 43b for connecting these pipes. The

metal pipes

42a and 42b and the

connection portions

43a and 43b are located outside the drive unit DU, and the

connection portions

43a and 43b are fixed to a bracket, not shown.

The

flexible tubes

41a and 41b are, for example, nylon tubes or polyurethane tubes. The arm portion 32 is provided in the internal space 33a with the

connection portions

39a, 39b of the

flexible tubes

41a, 41b and the

flow paths

32a, 32 b. The flexible tube 41a is connected to the connection portion 39a, and the flexible tube 41b is connected to the connection portion 39 b. The

flexible tubes

41a and 41b extend from the

connection portions

39a and 39b in the axial direction of the rotary shaft 33, and in the present embodiment, extend to the outside of the opening of the end portion of the rotary shaft 33 on the bearing 37 side, and further extend to the outside of the bearing 37 to be connected to the

connection portions

43a and 43 b.

The range of rotation of the rotary shaft 33 is set to 360 degrees or less. In the case of the present embodiment, when the shutter 7 rotates, the rotary shaft 33 rotates by about 60 degrees. The

flexible tubes

41a and 41b of the pipe 40 passing through the inside of the rotating shaft 33 are displaced while the ends on the side of the arm portions 32 are not moved by the ends on the side of the connecting

portions

43a and 43 b. However, since the

flexible tubes

41a and 41b have flexibility, they elastically deform to absorb positional displacement between the end portions. Fig. 5(B) is an explanatory view thereof. As shown in the figure, the

flexible tubes

41a and 41b are twisted by the displacement of the end portion of the arm portion side 32 due to the rotation of the rotating shaft 33, but are not broken by the flexibility thereof, and return to the original position by the rotation of the rotating shaft 33, and return to the original state. In the present embodiment, the piping in the rotary shaft 33 is constituted by the

flexible pipes

41a and 41b as described above, and the positional displacement between the ends of the pipes caused by the rotation of the rotary shaft 33 can be absorbed by the deformation of the pipes. While a rotary joint is known as a structure for passing a cooling medium through a rotating portion, the cost is high, and in the present embodiment, a flow path structure for the cooling medium can be provided at a relatively low cost by using a flexible pipe. Further, since there is no sliding member sealed with each other like a rotary joint and the torsion of the

flexible tubes

41a and 41b is used, the leakage of the cooling medium can be more reliably prevented at a portion where the cooling medium does not leak structurally.

When the positional displacement between the pipe ends caused by the rotation of the rotary shaft 33 is absorbed by the deformation of the

flexible pipes

41a and 41b as in the present embodiment, the longer the

flexible pipes

41a and 41b are, the larger the amount of rotation can be accommodated. The bearing 34 of the present embodiment has a ball bearing 34b separated in the Y direction and has a relatively long overall length. This structure of the bearing 34 is advantageous not only in that the rotational stability of the rotary shaft 33 is improved, but also in that the

flexible tubes

41a and 41b are lengthened due to the lengthening of the rotary shaft 33. The

connection portions

43a and 43b may be located inside the rotary shaft 33, but locating them outside as in the present embodiment can improve the workability of piping work and is also advantageous in terms of lengthening the

flexible pipes

41a and 41 b. The

flexible tubes

41a and 41b are also provided to extend to the outside through the bearing 37, which is advantageous in that the members can be lengthened.

< monitoring device >

The monitoring device 9 will be described with reference to fig. 3 and 4. The monitor device 9 is mounted on a base member 13, and the base member 13 is supported by a support column 15 erected on the bottom of the source chamber 5. In the present embodiment, two monitoring apparatuses 9 are mounted on one base member 13. The monitoring device 9 is replaceably fixed to the base member 13 via the mounting member 9 c.

A wall member 14 is provided at an end of the base member 13 on the vapor deposition source 6 side, and the monitor 9 is positioned behind the wall member 14. The base member 13, the wall member 14, and the monitoring device 9 are disposed on the sides of the vapor deposition source 6 in the extending direction (Y direction in the present embodiment) of the vapor deposition source 6, and on both sides of the vapor deposition source 6 in the present embodiment. With this arrangement, the discharge state can be monitored by the monitoring device 9 without affecting the discharge of the vapor deposition material from the vapor deposition source 6 to the substrate 10.

The monitoring device 9 is disposed apart from the rotary shaft 33 on the side of the rotary shaft 33 in the radial direction R, and is particularly located on the side of the bearing 34. The empty space around the rotation shaft 33 can be effectively used as the arrangement space of the monitoring device 9.

The monitoring device 9 of the present embodiment includes a crystal oscillator 9c as a film thickness sensor inside the housing 9 a. The vapor deposition material discharged from the vapor deposition source 6 is introduced through an introduction portion 9b formed in the housing 9a and adheres to the crystal oscillator 9 c. The oscillation frequency of the crystal oscillator 9c varies depending on the amount of deposition of the deposition material. By monitoring the oscillation frequency of the crystal oscillator 9c, the film thickness of the vapor deposition substance deposited on the substrate 10 can be monitored.

The structures of the base member 13 and the wall member 14 are further explained with reference to fig. 6 and 7. Fig. 6 is a perspective view of the monitoring device 9 and its peripheral base member 13 and wall member 14, and fig. 7 is a perspective view of the base member 13 and wall member 14 viewed from the opposite side.

The base member 13 is a plate-like member supported by the support column 15 in a horizontal posture, and an upper surface 13a thereof is a mounting surface of the monitoring device 9. The wall member 14 is a plate-like member, and is supported by the base member 13 in a vertical posture. The base member 13 and the wall member 14 are formed in an L shape as a whole. The wall member 14 is provided on the base member 13 so as to be interposed between the monitoring device 9 and the vapor deposition source 6, and has a window portion 14a for exposing the monitoring device 9 to the vapor deposition source 6. The two window portions 14a are formed corresponding to the two monitoring devices 9, and in the present embodiment, are slit-shaped window portions whose upper sides are opened. The introduction portion 9b of the monitoring device 9 is exposed from the window portion 14a to the vapor deposition source 6.

The crystal oscillator 9c changes its vibration characteristic according to a change in temperature, and the correlation between the change in the vibration frequency and the discharge state of the vapor deposition material from the vapor deposition source 6 fluctuates. Therefore, when the temperature of the crystal oscillator 9c is increased by the heat of the vapor deposition source 6, the monitoring accuracy is lowered. The wall member 14 has a function of suppressing scattering of the vapor deposition material to the surroundings, and also has a function as a cooling plate interposed between the monitoring device 9 and the vapor deposition source 6 to reduce heat radiation from the vapor deposition source 6 to the monitoring device 9.

In the present embodiment, the monitoring device 9 is indirectly cooled by further circulating a cooling medium through the base member 13 and the wall member 14. The cooling performance of the monitoring device 9 can be improved.

The base member 13 has

connection portions

13b and 13c to which the

pipes

44 and 45 are connected. The connecting

portions

13b and 13c are formed at one end and the other end of the base member 13 in the X direction. The

pipes

44 and 45 are connected to the circulation device 50, for example, and the pipe 44 is a pipe on the supply side of the cooling medium and the pipe 45 is a pipe on the discharge side (return side) of the cooling medium. A flow path 13d through which the cooling medium flows is formed in the base member 13, and the cooling medium flows through the flow path 13d from the connection portion 13b to the connection portion 13 c. Whereby the base member 13 is cooled.

In addition, a flow path 14b for the cooling medium is also formed in the wall member 14. The flow path 14b is a flow path branched from the flow path 13d of the holder member 13, and these

flow paths

13d and 14b communicate with each other at a communication point 14 c. The communication point 14c is located at the connecting portion of the wall member 14 and the base member 13. The passage 13d communicates with the passage 14b, and the cooling medium can be circulated through the base member 13 and the wall member 14 by the

common pipes

44 and 45.

< electronic device >

Next, an example of the electronic device will be described. Hereinafter, the structure of the organic EL display device is illustrated as an example of the electronic device.

First, an organic EL display device to be manufactured will be described. Fig. 8(a) is an overall view of the organic EL display device 500, and fig. 8(B) is a view showing a cross-sectional structure of 1 pixel.

As shown in fig. 8(a), in the display region 51 of the organic EL display device 500, a plurality of pixels 52 each including a plurality of light-emitting elements are arranged in a matrix. As will be described in detail later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes.

The pixel herein refers to a minimum unit that can display a desired color in the display region 51. In the case of a color organic EL display device, the pixel 52 is configured by a combination of a plurality of sub-pixels, i.e., the 1 st light-emitting element 52R, the 2 nd light-emitting element 52G, and the 3 rd light-emitting element 52B, which display different light emissions from each other. The pixel 52 is often composed of a combination of 3 sub-pixels, i.e., a red (R) light emitting element, a green (G) light emitting element, and a blue (B) light emitting element, but is not limited thereto. The pixel 52 may include at least 1 kind of sub-pixel, preferably 2 or more kinds of sub-pixels, and more preferably 3 or more kinds of sub-pixels. As the sub-pixels constituting the pixel 52, for example, a combination of 4 kinds of sub-pixels, i.e., a red (R) light emitting element, a green (G) light emitting element, a blue (B) light emitting element, and a yellow (Y) light emitting element, may be used.

Fig. 8(B) is a partial cross-sectional view of the line a-B of fig. 8 (a). The pixel 52 includes a plurality of sub-pixels each including an organic EL element including a 1 st electrode (anode) 54, a hole transport layer 55, one of a red layer 56R, a green layer 56G, and a blue layer 56B, an electron transport layer 57, and a 2 nd electrode (cathode) 58 on a substrate 53. The hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 correspond to organic layers. The red, green, and blue color layers 56R, 56G, and 56B are formed in patterns corresponding to light-emitting elements (also referred to as organic EL elements) that emit red, green, and blue colors, respectively.

The 1 st electrode 54 is formed separately for each light emitting element. The hole transport layer 55, the electron transport layer 57, and the 2 nd electrode 58 may be formed in common to the plurality of

light emitting elements

52R, 52G, and 52B, or may be formed for each light emitting element. That is, as shown in fig. 8(B), after the hole transport layer 55 is formed as a common layer in a plurality of sub-pixel regions, the red, green, and blue color layers 56R, 56G, and 56B may be formed separately for each sub-pixel region, and then the electron transport layer 57 and the 2 nd electrode 58 may be formed as a common layer in a plurality of sub-pixel regions.

In addition, in order to prevent a short circuit between the 1 st electrodes 54 which are close to each other, an insulating layer 59 is provided between the 1 st electrodes 54. Further, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 60 for protecting the organic EL element from moisture and oxygen is provided.

In fig. 8(B), the hole transport layer 55 and the electron transport layer 57 are illustrated as one layer, but may be formed of a plurality of layers including a hole blocking layer and an electron blocking layer depending on the structure of the organic EL display element. Further, a hole injection layer having an energy band structure may be formed between the 1 st electrode 54 and the hole transport layer 55 so that holes can be smoothly injected from the 1 st electrode 54 into the hole transport layer 55. Similarly, an electron injection layer may be formed between the 2 nd electrode 58 and the electron transit layer 57.

The red, green, and blue color layers 56R, 56G, and 56B may be formed of a single light-emitting layer, or may be formed by laminating a plurality of layers. For example, the red layer 56R may be formed of 2 layers, the upper layer may be formed of a red light-emitting layer, and the lower layer may be formed of a hole-transporting layer or an electron-blocking layer. Alternatively, the lower layer may be formed of a red light-emitting layer, and the upper layer may be formed of an electron-transporting layer or a hole-blocking layer. By providing the layer on the lower side or the upper side of the light-emitting layer in this way, the light-emitting position in the light-emitting layer is adjusted, and the optical path length is adjusted, whereby the color purity of the light-emitting element can be improved.

Although the red layer 56R is shown here as an example, the green layer 56G and the blue layer 56B may have the same structure. The number of layers may be 2 or more. Further, layers of different materials such as the light-emitting layer and the electron-blocking layer may be stacked, or layers of the same material may be stacked, for example, 2 or more layers of the light-emitting layer may be stacked.

In the manufacture of such an electronic device, the film formation apparatus 1 described above can be applied, and the manufacturing method can include: a conveying step of conveying the substrate 53 by the conveying device 2; and a vapor deposition step of vapor-depositing at least one of the layers on the substrate 53 conveyed by the vapor deposition device 3.

< other embodiments >

In the above embodiment, two baffles 7 are provided for one vapor deposition source 6, but a configuration may be adopted in which one baffle 7 is provided for one vapor deposition source 6. Further, two drive units DU1, DU2 are provided for one support member 30, but one drive unit DU may be provided for one support member 30.

The evaporation source 6 may be a point source other than a line source. In the above embodiment, the rotation center line AL of the flapper 7 is in the horizontal direction (Y direction), but may be in the vertical direction (Z direction). In this case, the flap 7 may be a plate-shaped flap supported in a horizontal posture, and the support member 30 may be configured without the attachment portion 31 of the arm portion 32 connected to the rotation shaft 33. This structure is advantageous when the evaporation source 6 is a point source.

The cooling medium may not be circulated, or the discharged cooling medium may be discarded without being supplied to the support member 30 or the like again.

The flow path 31a of the mounting portion 31 may pass through from one end to the other end in the longitudinal direction of the mounting portion 31 without being folded back at the middle portion. In this case, there is also one flow passage in the arm portion 32, and the coolant can be made to flow in one direction in the order of the drive unit DU1 → the arm portion 32 → the mounting portion 31 → the arm portion 32 → the drive unit DU 2. Further, only the supply-side flexible tube 41a is disposed in the rotary shaft 33 of the drive unit DU1, and only the discharge-side flexible tube 41b is disposed in the rotary shaft 33 of the drive unit DU 2.

The cooling structure of the base member 13 and the wall member 14 is not limited to the vapor deposition device 3 of the above embodiment, and can be applied to various vapor deposition devices.

The present invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the claims are included to disclose the scope of the invention.

Description of the reference numerals

1 film forming device, 2 conveying device, 3 vapor deposition device, 9 monitoring device.

Claims

1. A vapor deposition device is provided with:

a deposition source for discharging a deposition material to the substrate; and

it is characterized in that the preparation method is characterized in that,

the base member has a flow path through which a cooling medium flows.

2. The vapor deposition apparatus according to claim 1,

the vapor deposition apparatus includes a wall member provided on the pedestal member so as to be interposed between the monitoring unit and the vapor deposition source, the wall member having a window portion for exposing the monitoring unit to the vapor deposition source,

the wall member has a flow path through which the cooling medium flows.

3. The vapor deposition apparatus according to claim 2,

the flow path of the base member and the flow path of the wall member communicate at a connecting portion of the base member and the wall member.

4. The vapor deposition apparatus according to claim 1,

the monitoring member includes a crystal oscillator configured to attach a vapor deposition material discharged from the vapor deposition source.

5. A film deposition apparatus includes:

a conveying device for conveying the substrate; and

the vapor deposition device is provided with:

a base member on which the monitoring unit is mounted,

the base member has a flow path through which a cooling medium flows.

6. The film forming apparatus according to claim 5,

the vapor deposition device includes a wall member provided on the pedestal member so as to be interposed between the monitoring unit and the vapor deposition source, the wall member having a window portion for exposing the monitoring unit to the vapor deposition source,

the wall member has a flow path through which the cooling medium flows.

7. The film forming apparatus according to claim 5,

the pedestal member and the monitoring unit are disposed on a side of the vapor deposition source in an extending direction of the vapor deposition source.

8. The film forming apparatus according to claim 5,

the vapor deposition device is provided with:

a baffle plate; and

a rotating member that rotates the shutter on a moving rail including a position between the deposition source and the substrate,

the method comprises the following steps:

a rotating shaft forming a rotation center of the baffle along an extending direction of the evaporation source; and

a support member connected to the rotary shaft and supporting the baffle,

the rotating shaft is arranged on the side of the extending direction of the evaporation source relative to the evaporation source,

the base member and the monitoring unit are disposed on a radial side of the rotation shaft.

9. A film formation method using the film formation apparatus according to any one of claims 5 to 8, the film formation method comprising:

a conveying step of conveying the substrate by the conveying device; and

10. A method for manufacturing an electronic device using the film formation apparatus according to any one of claims 5 to 8, the method comprising:

a conveying step of conveying the substrate by the conveying device; and