CN114543688A - Step height standard sample block, preparation method and white light interferometer calibration method - Google Patents
Step height standard sample block, preparation method and white light interferometer calibration method Download PDFInfo
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- CN114543688A CN114543688A CN202210051175.XA CN202210051175A CN114543688A CN 114543688 A CN114543688 A CN 114543688A CN 202210051175 A CN202210051175 A CN 202210051175A CN 114543688 A CN114543688 A CN 114543688A
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000008033 biological extinction Effects 0.000 abstract description 9
- 238000005259 measurement Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0608—Height gauges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
- G01B21/042—Calibration or calibration artifacts
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a step height standard sample block, a preparation method and a white light interferometer calibration method. This step height standard appearance piece includes: the device comprises a bottom layer and a step layer positioned on the bottom layer; the upper surface of the step layer is provided with a groove, the groove is used for receiving and reflecting light of the target white light interferometer, and the material of the step layer is opaque. Because the step structure is formed by the step layer with the groove instead of two layers of materials, and the materials of the step layer are opaque materials, the step structure in the step height standard sample block has the same refractive index and extinction coefficient on the upper surface and the lower surface, so that the intensity of light irradiated on the step structure cannot be influenced by the step height standard sample block, the step height standard sample block provided by the invention is used for calibrating the white light interferometer, the calibration error of the white light interferometer is favorably reduced, and the rapid and accurate calibration of the white light interferometer is realized.
Description
Technical Field
The invention relates to the technical field of microelectronic measurement and test, in particular to a step height standard sample block, a preparation method and a white light interferometer calibration method.
Background
Integrated circuits, large scale integrated circuits and micro-electro-mechanical systems (MEMS) devices contain a large number of step structures, which have a direct impact on the overall performance of the device, and therefore, accurate measurement and monitoring of the step structures is an important means for ensuring the quality of the devices. At present, the step height measuring instrument mainly comprises an atomic force microscope, a scanning tunnel microscope, a nanometer measuring machine, a white light interferometer, a step measuring instrument, a laser film thickness tester and the like. In a semiconductor production line, a white light interferometer has high use frequency and belongs to non-contact measurement.
Before the white light interferometer is used for measurement, the white light interferometer is generally required to be calibrated by using a step height standard sample block, however, the white light interferometer is calibrated by using the existing step height standard sample block, and the calibration result is not accurate enough.
Disclosure of Invention
The embodiment of the invention provides a step height standard sample block, a preparation method and a white light interferometer calibration method, and aims to solve the problem that the conventional step height standard sample block cannot be used for calibrating a white light interferometer accurately.
In a first aspect, an embodiment of the present invention provides a step height standard sample block, including: the device comprises a bottom layer and a step layer positioned on the bottom layer;
the upper surface of the step layer is provided with a groove, the groove is used for receiving and reflecting light of the target white light interferometer, and the step layer is made of opaque materials.
In one possible implementation manner, the material of the step layer is GaAlAs, and the material of the bottom layer is GaAs.
In one possible implementation manner, the material of the step layer is GaAs, and the material of the bottom layer is InGaP.
In one possible implementation, the groove does not penetrate through the edge of the step layer, and the aspect ratio of the groove is 5: 2.
In a second aspect, an embodiment of the present invention provides a method for preparing a step height standard sample block, including:
preparing a bottom layer;
growing an initial stage layer on the bottom layer;
and etching a groove on the upper surface of the initial step layer to prepare a step height standard sample block.
In a possible implementation manner, the etching a groove on the upper surface of the initial step layer to prepare a step height standard sample block includes:
spin-coating a photoresist on the upper surface of the initial step layer;
exposing and developing the photoresist by using a mask plate with a preset photoresist pattern to obtain a first sample;
etching a groove on the upper surface of the initial stage layer which is not covered by the photoresist in the first sample to obtain a second sample;
and removing the photoresist on the second sample to prepare a step height standard sample block.
In one possible implementation, the groove does not penetrate through the edge of the step layer, and the aspect ratio of the groove is 5: 2.
In one possible implementation manner, the material of the initial stage layer is GaAlAs, and the material of the bottom layer is GaAs.
In one possible implementation, the material of the initial stage layer is GaAs, and the material of the bottom layer is InGaP.
In a third aspect, an embodiment of the present invention provides a white light interferometer calibration method, which applies the step height standard sample block described in the first aspect or any one of the possible implementations of the first aspect to calibrate a white light interferometer.
The embodiment of the invention provides a step height standard sample block, a preparation method and a white light interferometer calibration method, wherein the step height standard sample block provided by the embodiment of the invention comprises a bottom layer and a step layer positioned on the bottom layer; the upper surface of the step layer is provided with a groove, the groove is used for receiving and reflecting light of the target white light interferometer, and the step layer is made of opaque materials. In the step height standard sample block provided by the embodiment of the invention, the step structure is formed by the step layer with the groove instead of two layers of materials, and the materials of the step layer are opaque materials, so that the step structure in the step height standard sample block has the same refractive index and extinction coefficient on the upper surface and the lower surface, and further the step height standard sample block provided by the embodiment of the invention cannot influence the intensity of light irradiated on the step structure.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic view of a light ray incident according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional structure diagram of a step height standard block according to an embodiment of the present invention;
FIG. 3 is a flow chart of an implementation of a step height standard sample block preparation method according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a step height standard block manufacturing process provided by an embodiment of the present invention;
FIG. 5 is a schematic diagram of step height standard blocks with different preset standard heights according to an embodiment of the present invention;
FIG. 6 is a flowchart illustrating an implementation of a white light interferometer calibration method according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a step structure in a step height standard block measured by scanning with a white light interferometer according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following description is made by way of specific embodiments with reference to the accompanying drawings.
First, the measurement principle of the optical interferometer is explained:
the light emitted by the white light interferometer is white light and is monochromatic light with different wavelengths and frequencies. When the coherence condition is satisfied, the interference phenomenon is generated by superposition, and the width of the interference fringes is different and the brightness is gradually reduced. Wherein, the functional relation between the optical path difference and the light intensity satisfies the following conditions:
wherein, I1、I2Is the light intensity of two beams of light, I0Is the background light intensity and satisfies I0＝I1+I2(ii) a Delta is the optical path difference of the two beams of light, and lambda represents the wavelength of a certain monochromatic light; m represents visibility of stripe, and satisfies
Pi is a correlation envelope term; m is coherent modulation degree, and M is mv; the CCD camera converts the microcosmic contour fluctuation of the measured surface into an amplified plane interference fringe, and the height data corresponding to each pixel is extracted through a phase unwrapping algorithm, so that the measurement of the step structure is indirectly finished through measuring the relative deformation of the interference fringe.
The inventor discovers that in the process of implementing the invention: according to fresnel reflection theory, light is reflected and refracted when it is incident from one medium to another. The electric field in the incident light can be divided into two components: an S component and a P component, wherein the S component is perpendicular to the plane of incidence and the P component is parallel to the plane of incidence, as shown in fig. 1. The reflection coefficient represents the ratio of the intensity of the reflected light field to the magnitude of the intensity of the incident light field. The reflectivity represents the ratio of the reflected light intensity to the incident light intensity, i.e. the square of the reflection coefficient. The above two parameters may indicate the reflection of the light intensity. The reflection coefficient and the reflectance are expressed as follows, respectively, under the S component and the P component:
the absorption of the medium surface to the light is not negligible, and the absorption of the medium to the light can be described by an extinction coefficient k, and then the reflection coefficient and the reflectivity can be expressed as:
in the formula, n1And n2Representing the refractive indices of both media. Reflectivity RS＝RP＝|rP|2And obtaining the following through simplified calculation:
that is, as can be seen from the above formula, the reflectance of incident light has a relationship with the refractive index n and the extinction coefficient k of the medium.
Considering the existing step height standard sample block, the top of the step structure is SiO2The bottom is Si and therefore probably due to the existing step heightThe top and bottom materials of the step structure of the standard sample block are different, the refractive index and the extinction coefficient of the standard sample block are also different, and further the intensity of light is influenced, and the step height measurement of the step structure is completed by the white light interferometer based on the functional relation between the optical path difference and the light intensity, so that a certain calibration error exists in the calibration of the white light interferometer based on the conventional step height standard sample block.
Based on the findings of the inventor, as shown in fig. 2, the step height standard block provided by the embodiment of the invention comprises: a bottom layer 10 and a step layer 20 located on the bottom layer.
The upper surface of the step layer 20 has a groove 21, the groove 21 is used for receiving and reflecting light of the target white light interferometer, and the material of the step layer 20 is opaque.
The step height standard sample block provided by the embodiment of the invention is composed of a bottom layer and a step layer positioned on the bottom layer, wherein the upper surface of the step layer is provided with a groove, and the step layer is made of opaque materials. The step structure is not formed by two layers of materials any more, so that the step structure in the step height standard sample block has the same refractive index and extinction coefficient on the upper surface and the lower surface, the step height standard sample block provided by the embodiment of the invention cannot influence the intensity of light irradiated on the step structure, and the step height standard sample block provided by the embodiment of the invention is used for calibrating the white light interferometer, so that the calibration error of the white light interferometer is reduced, and the rapid and accurate calibration of the white light interferometer is realized.
Optionally, the material of the step layer may be GaAlAs, and the material of the bottom layer may be GaAs, or the material of the step layer may be GaAs, and the material of the bottom layer may be InGaP. So that the step structure in the step height standard sample block provided by this embodiment has the same refractive index and extinction coefficient on the upper and lower surfaces, and has a higher refractive index at the same time.
Optionally, in the step height standard sample block provided in the above embodiment, the groove 21 does not penetrate through the edge of the step layer 20, that is, the groove 21 does not penetrate through the front and rear end faces of the step layer 20, and also does not penetrate through the left and right end faces of the step layer 20.
In order to examine the uniformity of the step heights at different positions in the step height standard sample block, the groove 21 may be a rectangular groove, and for example, the length-width ratio of the groove 21 may be 5: 2.
Wherein the depth of the groove 21 is the preset standard height of the step height standard block.
In this embodiment, based on the calibration requirement of the white light interferometer, the step height standard sample blocks with different preset standard heights can be obtained for the calibration of the white light interferometer.
Referring to fig. 3, which shows an implementation flowchart of the step height standard sample block preparation method provided by the embodiment of the present invention, details are as follows:
in step 301, a bottom layer is prepared.
In step 302, an initial level of steps is grown on the bottom layer.
In step 303, a groove is etched on the upper surface of the initial step layer to prepare a step height standard sample block.
An initial step layer with a preset thickness can be grown on the bottom layer, and a groove is etched on the upper surface of the initial step layer based on a preset etching depth, wherein the preset etching depth is smaller than the preset thickness, and the preset thickness is the preset standard height of the step height standard sample block.
In this embodiment, the preset etching depth is limited to be smaller than the preset thickness, so that the step layer obtained after etching is a step structure made of one material, and the step structure in the step height standard sample block has the same refractive index and extinction coefficient on the upper surface and the lower surface, so that the step height standard sample block prepared by the step height standard sample block preparation method provided by the embodiment of the present invention does not affect the intensity of light irradiated on the step structure, and further the step height standard sample block prepared by the step height standard sample block preparation method provided by the embodiment of the present invention is used for calibrating the white light interferometer, which is beneficial to reducing the calibration error of the white light interferometer and realizing the fast and accurate calibration of the white light interferometer.
Optionally, etching a groove on the upper surface of the initial step layer to prepare a step height standard sample block, which may include:
and spin-coating photoresist on the upper surface of the initial step layer.
And exposing and developing the photoresist by using a mask plate with a preset photoresist pattern to obtain a first sample.
And etching a groove on the upper surface of the initial stage layer which is not covered by the photoresist in the first sample to obtain a second sample.
And removing the photoresist on the second sample to prepare the step height standard sample block.
As shown in fig. 4, in this embodiment, the step height standard sample block is specifically prepared through the process steps of material preparation, thermal oxidation, glue coating, exposure, development, etching, glue removal, and the like, wherein the step etching process can ensure the height of the step structure in the step height standard sample block by accurately controlling the etching rate. After the photoresist stripping process is finished, the same refractive index and extinction coefficient exist on the upper surface and the lower surface of the step structure.
Similarly, the etched grooves in this embodiment do not penetrate through the front and rear end surfaces of the initial step layer, nor through the left and right end surfaces of the initial step layer, i.e., the grooves do not penetrate through the edge of the initial step layer.
The etched groove may be a rectangular groove, and for example, the aspect ratio of the etched groove may be 5: 2.
Similarly, the material of the step layer may be GaAlAs, and the material of the bottom layer may be GaAs. Alternatively, the material of the step layer may be GaAs and the material of the bottom layer may be InGaP.
For example, the step height standard sample blocks with different preset standard heights prepared by the step height standard sample block preparation method provided by the embodiment of the invention are shown in fig. 5.
Fig. 6 shows a flowchart of an implementation of the white light interferometer calibration method provided by the embodiment of the present invention, which is detailed as follows:
in step 601, at least one step height standard block with a preset standard height is obtained.
In step 602, a white light interferometer is used to measure the standard block of step heights, and the measured height of the standard block of step heights is obtained.
In step 603, the white light interferometer is calibrated using the measured height and a predetermined standard height.
The step height standard sample block with the preset standard height is a step height standard sample block with the same structure as that of the embodiment, or a step height standard sample block prepared by using the step height standard sample block preparation method provided by the embodiment. The method for preparing the step height standard sample block can be based on the method for preparing the step height standard sample block provided by the embodiment, and a set of universal step height standard sample block is provided for the calibration of the white light interferometer.
In the embodiment of the invention, the step height standard sample block in the embodiment is applied to calibrate the white light interferometer, and the measurement result (namely the measurement height) of the white light interferometer is compared with the standard value (namely the preset standard height) of the step height standard sample block, so that whether the magnitude of the white light interferometer is accurate and reliable is determined. Fig. 7 shows a schematic diagram of a step structure in a step height standard sample block scanned and measured by using a white light interferometer, and the embodiment of the present invention applies the step height standard sample block in the above embodiment to calibrate the white light interferometer, which is beneficial to reducing the calibration error of the white light interferometer, realizes the rapid and accurate calibration of the white light interferometer, and has certain practical value and popularization in the field of semiconductor process parameter measurement.
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A step height standard proof block, comprising: the device comprises a bottom layer and a step layer positioned on the bottom layer;
the upper surface of the step layer is provided with a groove, the groove is used for receiving and reflecting light of the target white light interferometer, and the material of the step layer is opaque.
2. The step height master block of claim 1, wherein the step layer is made of GaAlAs and the bottom layer is made of GaAs.
3. The step height proof mass of claim 1, wherein the step layer is made of GaAs and the bottom layer is made of InGaP.
4. The step height proof swatch block of any one of claims 1-3, wherein the groove does not extend through an edge of the step level, the groove having an aspect ratio of 5: 2.
5. A preparation method of a step height standard sample block is characterized by comprising the following steps:
preparing a bottom layer;
growing an initial stage layer on the bottom layer;
and etching a groove on the upper surface of the initial step layer to prepare a step height standard sample block.
6. The method for preparing a step height standard block according to claim 5, wherein the step height standard block is prepared by etching a groove on the upper surface of the initial step layer, and comprises:
spin-coating a photoresist on the upper surface of the initial step layer;
exposing and developing the photoresist by using a mask plate with a preset photoresist pattern to obtain a first sample;
etching a groove on the upper surface of the initial stage layer which is not covered by the photoresist in the first sample to obtain a second sample;
and removing the photoresist on the second sample to prepare a step height standard sample block.
7. The method of claim 5 or 6, wherein the groove does not penetrate the edge of the initial step layer, and the aspect ratio of the groove is 5: 2.
8. The method as claimed in claim 5 or 6, wherein the initial step layer is made of GaAlAs and the bottom layer is made of GaAs.
9. The method as claimed in claim 5 or 6, wherein the material of the initial step layer is GaAs and the material of the bottom layer is InGaP.
10. A white light interferometer calibration method, characterized in that the white light interferometer is calibrated by using the step height standard block according to any one of claims 1 to 4.
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|---|---|---|---|---|
| JP2000205828A (en) * | 1999-01-19 | 2000-07-28 | Fujitsu Ltd | Method for measuring step on transparent film and method for forming phase shift mask |
| JP2001118832A (en) * | 1999-10-21 | 2001-04-27 | Toshiba Corp | Method and instrument for measuring depth of etched groove, film thickness, and step |
| US20070148792A1 (en) * | 2005-12-27 | 2007-06-28 | Marx David S | Wafer measurement system and apparatus |
| CN103303860A (en) * | 2013-05-10 | 2013-09-18 | 西安交通大学 | Method for generating 0-50nm of random-height nano step on surface of Si |
| CN106017385A (en) * | 2016-07-21 | 2016-10-12 | 中国电子科技集团公司第十三研究所 | Preparation method of step height standard sample block with nominal height ranging from 10 mu m to 100 mu m |
| CN110646639A (en) * | 2019-09-17 | 2020-01-03 | 西安交通大学 | Standard template for calibrating nano measuring instrument and preparation method thereof |
| CN111137846A (en) * | 2019-12-24 | 2020-05-12 | 中国电子科技集团公司第十三研究所 | Preparation method of micron-level step height standard sample block |
| US20210265185A1 (en) * | 2020-02-24 | 2021-08-26 | Yangtze Memory Technologies Co., Ltd. | Systems and methods for semiconductor chip surface topography metrology |
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2022
- 2022-01-17 CN CN202210051175.XA patent/CN114543688A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000205828A (en) * | 1999-01-19 | 2000-07-28 | Fujitsu Ltd | Method for measuring step on transparent film and method for forming phase shift mask |
| JP2001118832A (en) * | 1999-10-21 | 2001-04-27 | Toshiba Corp | Method and instrument for measuring depth of etched groove, film thickness, and step |
| US20070148792A1 (en) * | 2005-12-27 | 2007-06-28 | Marx David S | Wafer measurement system and apparatus |
| CN103303860A (en) * | 2013-05-10 | 2013-09-18 | 西安交通大学 | Method for generating 0-50nm of random-height nano step on surface of Si |
| CN106017385A (en) * | 2016-07-21 | 2016-10-12 | 中国电子科技集团公司第十三研究所 | Preparation method of step height standard sample block with nominal height ranging from 10 mu m to 100 mu m |
| CN110646639A (en) * | 2019-09-17 | 2020-01-03 | 西安交通大学 | Standard template for calibrating nano measuring instrument and preparation method thereof |
| CN111137846A (en) * | 2019-12-24 | 2020-05-12 | 中国电子科技集团公司第十三研究所 | Preparation method of micron-level step height standard sample block |
| US20210265185A1 (en) * | 2020-02-24 | 2021-08-26 | Yangtze Memory Technologies Co., Ltd. | Systems and methods for semiconductor chip surface topography metrology |
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