TW201643489A - Method and apparatus for optical fiber connection - Google Patents

Abstract

A system including a first component comprising a lensed facet; and a second component optically coupled to the first component, the second component comprising a tapered facet, the tapered facet and lensed facet spaced from each other so as to establish evanescent-wave coupling between the first component and the second component.

Description

Method and apparatus for fiber optic connection

This invention relates to methods and apparatus for connecting optical fibers.

Whether in lithography or other programs, optical detection measurement techniques are required for detection or measurement. In addition, radiation needs to be used in other procedures such as surface irradiation, in telecommunications, and the like.

In order to at least facilitate the delivery of radiation, an optical fiber can be used. An optical fiber is a waveguide (usually cylindrical) that transmits radiation along its axis. The fiber typically contains a core (usually in the middle) surrounded by a "cladding" layer. The fiber can be made entirely of a solid transparent material such as glass; the core and "cladding" layers are typically made of a dielectric material. The transparent material in one portion of the cross section of the fiber (usually in the middle) has a different optical structure (eg, a higher refractive index) than the rest, and forms a core with, for example, total internal reflection. Guided within the core. The boundary between the core and the "cladding" layer can be abrupt in, for example, a step-index fiber, or in, for example, a graded-index fiber. Gradient. The fiber can be single mode or multimode, with the main difference between the multimode fiber and the single mode fiber being that the multimode fiber has a significantly larger core lateral dimension (eg, width or diameter), for example, typically 50 microns to 100 micron, while single mode fibers typically have a core lateral dimension that is less than about ten times the wavelength of the propagating radiation, for example, 8 microns and 10.5 microns.

Photonic-crystal fiber (PCF) is a special form of fiber. PCF can occur in many forms and is based on the properties of a photonic crystal (although the fiber itself does not need to have a crystalline material). An example of a PCF comprises a single solid and substantially transparent material, such as fused vermiculite glass, in which a periodic array of apertures extending parallel to the axis of the fiber is embedded. A "defect" in the form of a single aperture in a regular array forms a high refractive index region that acts as a waveguide core with radiation similar to that of a standard optical fiber. Guided within the waveguide core. Another mechanism for guiding radiation is based on the photonic-band-gap effect. Photonic bandgap guidance can be obtained by a suitable design of the aperture array.

It may be desirable to provide a connection for optically coupling portions of the fibers to each other at least or for optically coupling at least optical fibers to another component. In particular, it is desirable to provide a connection that provides high coupling efficiency, stability, and/or no special alignment. In an embodiment, this connection may need to be implemented for optically coupling the PCF to the PCF.

In one embodiment, a system is provided comprising: a first component comprising a lenticular facet; and a second component optically coupled to the first component, the second component A tapered facet is provided, the pyramidal face being spaced apart from the lenticular face to establish an evanescent-wave coupling between the first component and the second component .

In one embodiment, a method of optically coupling an optical component is provided, the method comprising: traversing one of a lenticular face of a first optical component and a tapered face of a second optical component The evanescent wave of the propagation of the gap.

In one embodiment, a spectrally broadened radiation device is provided comprising: a laser configured to output emitted radiation through one of the lasers; an optical fiber optically coupled to the output of the laser An optical fiber having an input for receiving the radiation from the laser and having an output for providing spectrally broadened output radiation, the optical fiber configured to be derived from The radiation of the laser is spectrally broadened to a spectral width of at least 0.5 nanometers around the nominal wavelength; and a system as described herein.

In one embodiment, a detection apparatus is provided comprising: a radiation device configured to provide radiation; an output to provide the radiation from the radiation device to a diffraction target; a detector configured to receive diffracted radiation from the target; and a system as described herein. In an embodiment, the detector is configured to determine alignment of two or more objects in response to the received diffracted radiation.

In one embodiment, an alignment sensor is provided comprising: an output for providing radiation from a radiation device to a target; a detector configured to receive radiation from the target A control system configured to determine alignment of two or more objects in response to the received radiation; and a system as described herein.

2‧‧‧radiation projector/radiation source

4‧‧‧Detector

6‧‧‧Substrate

10‧‧‧Spectrum

11‧‧‧Backward projection aperture plane

12‧‧‧Lens system

13‧‧‧Interference filter

14‧‧‧Refer to the mirror

15‧‧‧Contact lens/lens

16‧‧‧Partial reflective surface

17‧‧‧ polarizer

18‧‧‧Detector

100‧‧‧Alignment System / Alignment Sensor

104‧‧‧Lighting system/radiation system

106‧‧‧Electromagnetic radiation

108‧‧‧稜鏡

110‧‧‧ coating

112‧‧‧Alignment mark/alignment target

114‧‧‧ arrow

116‧‧‧Image Rotation Interferometer

118‧‧‧Sensor alignment axis

120‧‧‧Detector

122‧‧‧Signal Analyzer

500‧‧‧radiation system

501‧‧ ‧ laser

503‧‧‧Optical components

505‧‧‧ fiber optic

505a‧‧‧ input

505b‧‧‧output

507‧‧‧ Output optics

700‧‧‧radiation system

710‧‧‧Fiber Amplifier

720‧‧‧Photonic crystal fiber

730‧‧‧ Filter

740‧‧‧Relay and mechanical interface

800‧‧‧radiation system

810‧‧‧ fiber optic

815‧‧‧ fiber

820‧‧‧ fiber optic

825‧‧‧Connect/optical connection

830‧‧‧Optical module

900‧‧‧Photonic Crystal Fiber (PCF)

910‧‧‧Photonic Crystal Fiber (PCF)

920‧‧‧ lenticular surface

930‧‧‧"Covering" layer

940‧‧‧ cone-shaped face

950‧‧‧"Covering" layer

960‧‧‧琢

970‧‧‧structure

AD‧‧‧ adjuster

AS‧‧ Alignment Sensor

B‧‧‧radiation beam

BD‧‧•beam delivery system

BK‧‧ baking version

C‧‧‧Target section

CH‧‧‧Cooling plate

CO‧‧‧ concentrator

D‧‧‧ transverse size

DE‧‧‧developer

I/O1‧‧‧Input/Output埠

I/O2‧‧‧Input/Output埠

IF‧‧‧ position sensor

IL‧‧‧Lighting system/illuminator

IN‧‧‧ concentrator

L‧‧‧ length

LA‧‧‧ lithography device

LACU‧‧‧ lithography control unit

LB‧‧‧Loader

LC‧‧‧ lithography manufacturing unit

LS‧‧‧ level sensor

M ₁ ‧‧‧ patterned device alignment mark

M ₂ ‧‧‧ patterned device alignment mark

MA‧‧‧patterned device

MT‧‧‧Support structure/patterned device support

P ₁ ‧‧‧Substrate alignment mark

Substrate alignment mark P ₂ ‧‧‧

PM‧‧‧First Positioner

PS‧‧‧Projection System

PU‧‧‧Processing unit

PW‧‧‧Second positioner

R‧‧‧ Radius

RF‧‧‧ reference frame

RO‧‧‧ reference frame

S‧‧‧ horizontal size

SC‧‧‧Spin coater

SCS‧‧‧Supervisory Control System

SM1‧‧‧Detector

SM2‧‧‧Detector

SO‧‧‧radiation source

TCU‧‧‧ Coating Development System Control Unit

W‧‧‧Substrate

WT‧‧‧ substrate table

WTa‧‧‧ substrate table

WTb‧‧‧ substrate table

Z‧‧‧ distance

Embodiments will now be described, by way of example only, with reference to the accompanying drawings in which: FIG. 1 schematically depicts an embodiment of a lithographic apparatus; FIG. 2 schematically depicts a lithographic cell Or an embodiment of a cluster; FIG. 3 schematically depicts an embodiment of a detection device; FIG. 4 schematically depicts an additional embodiment of the detection device; FIG. 5 schematically depicts an alignment sensor device; Embodiments of a short coherence length radiation system in the visible region of the electromagnetic spectrum; FIG. 7 schematically depicts a tunable broad spectral width radiation system; FIG. 8 schematically depicts an example connection between a source and an optical module; Figure 9 schematically depicts an embodiment of a connection; Figure 10 (A) schematically depicts a detailed portion of an embodiment of a connection; Figure 10 (B) schematically depicts a detailed portion of an embodiment of the connection; and Figure 11 schematically depicts an additional embodiment of the connection.

Before describing the embodiments in detail, it is instructive to present an example environment in which the embodiments can be implemented.

A lithography apparatus is a machine that applies a desired pattern onto a substrate, typically applied to a target portion of the substrate. The lithography apparatus can be used, for example, in the fabrication of integrated circuits (ICs). In that case, a patterned device (which is alternatively referred to as a reticle or a proportional reticle) can be used to create a circuit pattern to be formed on individual layers of the IC. This pattern can be transferred to a target portion (eg, including portions of a die, a die, or a plurality of dies) on a substrate (eg, a germanium wafer). Transfer of the pattern is typically performed via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of sequentially adjacent adjacent target portions. Known lithography apparatus includes a so-called stepper in which each target portion is irradiated by exposing the entire pattern to a target portion at a time; and a so-called scanner in which a given direction ("scanning" Each of the target portions is irradiated by scanning the pattern via the radiation beam while scanning the substrate in parallel or anti-parallel in this direction. It is also possible to transfer the pattern from the patterned device to the substrate by imprinting the pattern onto the substrate.

Figure 1 schematically depicts a lithography apparatus LA. The apparatus comprises: - a lighting system (illuminator) IL configured to adjust a radiation beam B (eg, DUV radiation or EUV radiation); - a support structure (eg, a reticle stage) MT configured to support the pattern a device (eg, a reticle) MA and coupled to a first locator PM configured to accurately position the patterned device in accordance with certain parameters; - a substrate table (eg, wafer table) WTa, Constructed to hold a substrate (eg, a resist coated wafer) W and coupled to a second locator PW configured to accurately position the substrate according to certain parameters; a projection system (eg, a refractive projection lens system) PS configured to project a pattern imparted by the patterned device MA to the radiation beam B onto a target portion C of the substrate W (eg, comprising one or more dies) .

The illumination system can include various types of optical components for guiding, shaping, or controlling radiation, such as refractive, reflective, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof.

The patterned device support structure holds the patterned device in a manner that depends on the orientation of the patterned device, the design of the lithography device, and other conditions, such as whether the patterned device is held in a vacuum environment. The patterned device support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterned device. The patterned device support structure can be, for example, a frame or table that can be fixed or movable as desired. The patterned device support structure ensures that the patterned device is, for example, in a desired position relative to the projection system. Any use of the terms "proportional mask" or "reticle" herein is considered synonymous with the more general term "patterned device."

The term "patterned device" as used herein shall be interpreted broadly to mean any device that can be used to impart a pattern to a radiation beam in a cross section of a radiation beam to create a pattern in a target portion of the substrate. It should be noted that, for example, if the pattern imparted to the radiation beam includes a phase shifting feature or a so-called auxiliary feature, the pattern may not exactly correspond to the desired pattern in the target portion of the substrate. Typically, the pattern imparted to the radiation beam will correspond to a particular functional layer in the device (such as an integrated circuit) produced in the target portion.

The patterned device can be transmissive or reflective. Examples of patterned devices include photomasks, programmable mirror arrays, and programmable LCD panels. Photomasks are well known in lithography and include reticle types such as binary, alternating phase shift and attenuated phase shift, as well as various hybrid reticle types. One example of a programmable mirror array uses a matrix configuration of small mirrors, each of which can be individually tilted to reflect incident radiation beams in different directions. The tilted mirror is given to the radiation beam reflected by the mirror matrix case.

The term "projection system" as used herein shall be interpreted broadly to encompass any type of projection system suitable for the exposure radiation used or for other factors such as the use of a immersion liquid or the use of a vacuum, including refraction, Reflective, catadioptric, magnetic, electromagnetic, and electrostatic optical systems, or any combination thereof. Any use of the term "projection lens" herein is considered synonymous with the more general term "projection system."

As depicted herein, the device is of the transmissive type (eg, using a transmissive reticle). Alternatively, the device may be of a reflective type (eg, using a programmable mirror array of the type mentioned above, or using a reflective mask).

The lithography apparatus may belong to two (dual stage) or more than two stages (for example, two or more substrate stages, two or more patterned device support structures, or a substrate stage and a metrology platform) Type). In such "multi-stage" machines, additional stations may be used in parallel, or one or more stations may be subjected to preliminary steps while one or more other stations are used for exposure.

The lithography apparatus can also be of the type wherein at least a portion of the substrate can be covered by a liquid (eg, water) having a relatively high refractive index to fill the space between the projection system and the substrate. The immersion liquid can also be applied to other spaces in the lithography apparatus, such as the space between the reticle and the projection system. Infiltration techniques are well known in the art for increasing the numerical aperture of a projection system. The term "wetting" as used herein does not mean that a structure such as a substrate must be immersed in a liquid, but rather only means that the liquid is located between the projection system and the substrate during exposure.

Referring to Figure 1, illuminator IL receives a radiation beam from radiation source SO. For example, when the source is a quasi-molecular laser, the source and lithography devices can be separate entities. Under such conditions, the source is not considered to form part of the lithography apparatus, and the radiation beam is transmitted from the source SO to the illuminator IL by means of a beam delivery system BD comprising, for example, a suitable guiding mirror and/or beam expander. In other cases, for example, when the source is a mercury lamp, the source can be an integral part of the lithography device. Minute. The source SO and illuminator IL along with the beam delivery system BD (when needed) may be referred to as a radiation system.

The illuminator IL may comprise an adjuster AD for adjusting the angular intensity distribution of the radiation beam. In general, at least the outer radial extent and/or the inner radial extent (commonly referred to as σ outer and σ inner, respectively) of the intensity distribution in the pupil plane of the illuminator can be adjusted. In addition, the illuminator IL may include various other components such as a concentrator IN and a concentrator CO. The illuminator can be used to adjust the radiation beam to have a desired uniformity and intensity distribution in its cross section.

The radiation beam B is incident on a patterned device (e.g., reticle) MA that is held on a patterned device support (e.g., reticle stage) MT, and is patterned by the patterned device. In the case where the patterned device (e.g., reticle) MA has been traversed, the radiation beam B is transmitted through the projection system PS, which projects the beam onto the target portion C of the substrate W. With the second positioner PW and the position sensor IF (for example, an interference measuring device, a linear encoder, a 2-D encoder or a capacitive sensor), the substrate table WTa can be accurately moved, for example, to make different targets Part C is positioned in the path of the radiation beam B. Similarly, the first locator PM and another position sensor (which is not explicitly depicted in FIG. 1) can be used, for example, after mechanical scooping from the reticle library or during scanning relative to the radiation beam The path of B to accurately position the patterned device (eg, reticle) MA. In general, the movement of the patterned device support (e.g., reticle stage) MT can be achieved by means of a long stroke module (rough positioning) and a short stroke module (fine positioning) that form part of the first positioner PM. Similarly, the movement of the substrate table WTa can be achieved using a long stroke module and a short stroke module that form part of the second positioner PW. In the case of a stepper (relative to the scanner), the patterned device support (eg, reticle stage) MT can be connected only to the short-stroke actuator, or can be fixed.

The patterned device (eg, reticle) MA and substrate W can be aligned using patterned device alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks occupy a dedicated target portion as illustrated, the marks may be located in the space between the target portions (the marks are referred to as scribe line alignment marks). Similarly, more than one die is provided In the case of a patterned device (eg, reticle) MA, patterned device alignment marks can be located between the dies. Small alignment marks can also be included in the die among the device features, in which case the mark needs to be as small as possible and does not require any different imaging or program conditions compared to adjacent features. The alignment system for detecting alignment marks is further described below.

The lithography apparatus LA may be of the so-called multi-stage type having two or more stages WTa, WTb (for example, two substrate stages) and two or more station-exposure stations and measuring stations - The stations can be exchanged between the two stations. For example, while exposing a substrate on one stage at an exposure station, another substrate can be loaded onto another substrate stage at the measurement station and various preliminary steps are performed. The preliminary steps may include using the level sensor LS to map the surface control of the substrate, and using the alignment sensor AS to measure the position of the alignment marks on the substrate, both of which are reference frame RF support. If the position sensor IF is unable to measure the position of the stage while the stage is at the measurement station and at the exposure station, a second position sensor can be provided to enable tracking of the position of the stage at both stations. As another example, while the substrate on one stage is exposed at the exposure station, the other unit that does not have the substrate waits at the measurement station (where measurement activity may occur as appropriate). This other has one or more measuring devices and optionally other tools (eg, cleaning devices). When the substrate has completed exposure, the stage without the substrate moves to the exposure station to perform, for example, measurement, and the stage with the substrate moves to a portion (eg, a metrology station) that unloads the substrate and loads another substrate. These multiple configurations implement a substantial increase in the yield of the device.

As shown in FIG. 2, the lithography apparatus LA forms part of a lithography fabrication unit LC (sometimes referred to as a lithocell or a lithocluster), and the lithography fabrication unit LC also includes A device that performs one or more pre-exposure procedures and post-exposure procedures on the substrate. Conventionally, such devices include one or more spin coaters SC for depositing a resist layer, one or more developers DE for developing an exposed resist, one or more cooling plates CH, And one or more baking sheets BK. The substrate handler or robot RO picks up the substrate from the input/output 埠I/O1, I/O2, moves the substrate between different program devices, and delivers the substrate to The lithography apparatus is loaded with 匣LB. These devices, often collectively referred to as coating development systems, are under the control of the coating development system control unit TCU, and the coating development system control unit TCU itself is controlled by the supervisory control system SCS, and the supervisory control system SCS is also The lithography device is controlled via a lithography control unit LACU. Thus, different devices can be operated to maximize yield and processing efficiency.

Thus, with the lithography device, different patterns are sequentially imaged onto the substrate at precisely aligned positions. The substrate can undergo physical and chemical changes between sequential images that are aligned with each other. The substrate is removed from the device after the substrate has been exposed using at least one of the images, and after the substrate has undergone the desired program steps, the substrate is replaced to expose the substrate using an image of another pattern, etc., and An image of the additional pattern and any subsequent patterns is ensured to be accurately positioned relative to at least one of the already exposed images on the substrate. To this end, the substrate (and/or substrate stage and/or patterned device) can be provided with alignment marks to provide a reference location on the substrate, and the lithography apparatus is provided with an alignment system to measure the alignment position of the alignment marks. By measuring the alignment position of the alignment mark, in principle, the position of each point on the substrate can be predicted, that is, the position of the target portion of the previous exposure can be calculated, and the lithography device can be controlled to follow the target of the previous exposure. Partial exposure is followed by the target part.

Typically, the alignment marks on the substrate are diffraction structures such as diffraction gratings. The alignment system includes an alignment sensor system having a radiation source for emitting radiation toward the grating and a detector for detecting a diffraction pattern in the reflected radiation, that is, Sub-beams that are diffracted in first, third, and/or higher order are used to determine the position of the grating.

Furthermore, in order to properly and consistently expose the substrate exposed by the lithography apparatus, it is necessary to detect the exposed substrate, for example, for the resulting structure (eg, on the substrate or in the resist and/or other layers of the substrate) Device characteristics) are measured, for example, for program control and verification. One or more parameters of the structure are typically measured or determined, such as the critical dimension (CD) of the structure, the overlay error between subsequent layers formed in or on the substrate, the line thickness, and the like. If When an error is detected, the exposure of one or more subsequent substrates can be adjusted, especially if the detection can be performed quickly enough and quickly such that another substrate of the same batch is still to be exposed. Also, the exposed substrate can be stripped and reworked (to improve yield) or the exposed substrate can be discarded, thereby avoiding exposure to a substrate that is known to be defective. In the event that only some of the target portions of the substrate are defective, additional exposure may be performed only for good target portions. Another possibility is to adapt the settings of the subsequent program steps to compensate for the error, for example, the time of the trimming etch step can be adjusted to compensate for CD variations between the substrates caused by the lithography procedure steps.

The detecting device is configured to determine one or more attributes of the substrate, and in particular to determine how one or more of the different layers of the different substrates or the same substrate vary between different layers and/or across the substrate. There are various techniques for measuring the microstructure formed in a lithography process. Various tools for performing such measurements are known, including scanning electron microscopes that are often used to measure critical dimensions (CD), and for measuring overlays (alignment accuracy of two layers in the device) Specialization tools. An example of such a tool is a scatterometer developed for use in the field of lithography. The device directs the radiation beam onto the target on the surface of the substrate and measures one or more properties of the redirected radiation - for example, the intensity at a single angle of reflection that varies according to the wavelength; The intensity at one or more wavelengths; or the polarization that varies according to the angle of reflection - to obtain a "spectrum" of the attribute of interest that can be used to determine the target. The determination of the attribute of interest can be performed by various techniques: for example, by re-constructing the target structure by a repetitive approach such as tightly coupled wave analysis or finite element methods; library search; and principal component analysis. Similar to alignment, the target can be a diffraction grating, for example, a composite grating in which one of the layers is stacked by another of the other.

The detection device can be integrated into the lithography device LA or the lithography manufacturing unit LC, or can be a stand-alone component. In order to achieve the fastest measurement, it is necessary to have the detection device immediately after exposure to measure one or more properties in the exposed resist layer. However, the latent image in the resist has Very low contrast - there is only a very small difference in refractive index between the portion of the resist that has been exposed to radiation and the portion of the resist that has not been exposed to radiation - and not all detection devices have sufficient sensitivity for latent image There is a measure. Therefore, the measurement can be performed after the post-exposure bake step (PEB), which is usually the first step of the exposed substrate and increases between the exposed portion and the unexposed portion of the resist. Contrast. At this stage, the image in the resist can be referred to as a semi-latent. It is also possible to measure the developed resist image - at this point, the exposed or unexposed portion of the resist has been removed - or the developed resist after a pattern transfer step such as etching The image is measured. The latter possibility limits the possibility of rework of defective substrates, but still provides useful information, for example, for program control purposes.

Figure 3 depicts an embodiment of a detection device SM1. The detection device SM1 includes a radiation projector 2 (eg, a broadband (white light) radiation projector) that projects radiation onto a target (eg, a diffraction grating) of the substrate 6. The reflected radiation is transmitted to a detector 4 (e.g., a spectrometer detector), and the detector 4 measures the spectrum 10 of the specularly reflected radiation (i.e., the magnitude of the intensity that varies according to the wavelength). Based on this information, the structure or profile that causes the detected spectrum can be reconstructed by the processing unit PU, for example, by tightly coupled wave analysis and nonlinear regression, or by comparison with a simulated spectral library as shown at the bottom of FIG. . In general, for reconstitution, the general form of the structure is known to us, and some parameters are assumed based on the knowledge of the procedure for fabricating the structure, leaving only a few parameters of the structure to be determined based on the data. This detection device can be configured for normal incidence or oblique incidence.

Another embodiment of the detection device SM2 is shown in FIG. In this device, the radiation emitted by the radiation source 2 is focused by the lens system 12 through the interference filter 13 and the polarizer 17, reflected by the partially reflective surface 16 and focused onto the target of the substrate W via the objective lens 15, The objective lens 15 has a high numerical aperture (NA), desirably at least 0.9 or at least 0.95. The wetting measurement (using a liquid between the lens 15 and the substrate W) may even have a lens with a numerical aperture higher than one. The reflected radiation is then transmitted through the partially reflective surface 16 to the detector 18 for The scattered radiation is detected. The detector can be located in the back projection aperture plane 11 and the back projection aperture plane 11 is at the focal length of the lens 15, however, the pupil plane can instead use auxiliary optics (not shown) and then Imaging is performed on the detector 18. The pupil plane defines the angle of incidence for the radial position of the radiation and the angular position defines the plane of the azimuth of the radiation. The detector is, for example, a two-dimensional detector such that the two-dimensional angular scatter spectrum of the substrate target (i.e., the magnitude of the intensity that varies according to the scattering angle) can be measured. The detector 18 can be, for example, a CCD or CMOS sensor array, and can have an integration time of, for example, 40 milliseconds per frame.

The reference beam is often used, for example, to measure the intensity of incident radiation. To perform this measurement, when the radiation beam is incident on the partially reflective surface 16, a portion of the radiation beam is transmitted through the surface as a reference beam toward the reference mirror 14. The reference beam is then projected onto different portions of the same detector 18.

One or more interference filters 13 can be used to select wavelengths of interest in the range of, for example, 405 nm to 790 nm or even lower (such as 200 nm to 300 nm). The interference filter can be tunable rather than containing a collection of different filters. Instead of one or more interference filters or in addition to one or more interference filters, a grating can also be used.

The detector 18 can measure the intensity of the scattered radiation at a single wavelength (or narrow wavelength range), the intensity of the discrete wavelengths at multiple wavelengths, or the intensity integrated over a range of wavelengths. In addition, the detector can separately measure the intensity of the transverse magnetic (TM) polarized radiation and the transverse electrical (TE) polarized radiation, and/or the phase difference between the transverse magnetic polarized radiation and the laterally polarized radiation.

It is possible to use a broadband radiation source 2 (i.e., a radiation source having a wide range of radiation frequencies or wavelengths and thus a wide range of colors), which gives a large etendue, allowing for multiple wavelengths. mixing. The plurality of wavelengths in the wide band desirably each have a bandwidth of δλ and an interval of at least 2δλ (i.e., twice the wavelength bandwidth). A number of "sources" of radiation may be different portions of an extended source of radiation that have been split using, for example, fiber bundles. In this way, the angular resolution of the scatter spectrum can be measured in parallel at multiple wavelengths. Measure 3-D spectra (wavelength and two different angles), which contain more capital than 2-D spectra News. This situation allows for more information to be measured, which increases the stability of the metrology program. This is described in more detail in U.S. Patent Application Publication No. US 2006-0066855, which is incorporated herein by reference.

One or more attributes of the substrate can be determined by comparing one or more attributes of the beam before and after it has been redirected by the target. For example, the theoretically redirected beam can be calculated by comparing the redirected beam to the model using the substrate and searching for the best between the measured redirected beam and the calculated redirected beam. Fit the model to make this determination. Typically, a parametric general model is used and the parameters of the model (eg, width, height, and sidewall angle of the pattern) are varied until a best match is obtained.

The spectral type of the detection device directs the broadband radiation beam onto the substrate and measures the spectrum of the radiation that is scattered into a particular narrow angle range (intensity that varies according to wavelength). The angle resolution type of this detection device uses a monochromatic radiation beam and measures the intensity of the scattered radiation that varies according to the angle (or the intensity ratio and phase difference in the case of an elliptical measurement configuration). Alternatively, the measurement signals of different wavelengths can be separately measured and combined in the analysis phase. Polarized radiation can be used to produce more than one spectrum from the same substrate.

In order to determine one or more parameters of the substrate, the theoretical spectrum produced from the model of the substrate and the measured spectrum produced by the redirected beam, which vary depending on the wavelength (spectral type device) or angle (angle resolution type device) Find the best match between. In order to find the best match, there are various methods that can be combined. For example, the first method is a repeated search method in which a first set of model parameters is used to calculate a first spectrum, and a first spectrum and a measured spectrum are compared. Next, a second set of model parameters is selected, a second spectrum is calculated, and the second spectrum is compared to the measured spectrum. Repeat these steps, where the target finds the set of parameters that give the best matching spectrum. Typically, the information from the comparison is used to manipulate the selection of subsequent sets of parameters. This program is called a repeated search technique. A model with a set of parameters giving the best match is considered the best description of the measured substrate. The second method forms a library of spectra, each spectrum corresponding to a particular set of model parameters. Typically, a set of model parameters is selected to cover the base All or almost all possible variations of board properties. Compare the measured spectra with the spectra in the library. Similar to the repeated search method, a model having a set of parameters corresponding to the spectrum giving the best match is considered to be the best description of the measured substrate. Interpolation techniques can be used to more accurately determine the best set of parameters in this library search technique.

In any method, sufficient data points (wavelengths and/or angles) in the calculated spectrum should be used in order to achieve an accurate match, usually between 80 and 800 data points or more for each spectrum. . In the case of a repeated method, each iteration for each parameter value will involve calculations under 80 or more data points. Multiply this calculation by the number of iterations needed to get the correct profile parameters. Therefore, many calculations are required. In practice, this situation leads to a compromise between accuracy and speed of processing. In the library approach, there is a similar trade-off between the accuracy and time required to set up the library.

In any of the devices described herein, the target on the substrate W can be a grating that is printed such that after development, the bars are formed from solid resist lines. The strips can alternatively be etched into the substrate.

In an embodiment, the target pattern is selected to be sensitive to parameters of interest such as focus, dose, overlay, chromatic aberration, etc. in the lithographic projection device such that changes in the relevant parameters will manifest as changes in the printed target . For example, the target pattern can be sensitive to chromatic aberrations in the lithographic projection device, particularly the projection system PL, and the illumination symmetry and the presence of this aberration will manifest itself as a change in the printed target pattern. Therefore, the measured data of the printed target pattern is used to reconstruct the target pattern. The parameters of the target pattern, such as line width and shape, may be input to a reconstruction program executed by the processing unit PU, based on knowledge of the printing steps and/or other procedures.

Other types of detection or metrology devices can be used in an embodiment. For example, a dark field metrology device such as that described in U.S. Patent Application Publication No. 2013-0308142, which is incorporated herein by reference in its entirety, is incorporated herein by reference. Moreover, their other types of metrology devices may use techniques that are completely different than the techniques as described herein.

And although an example of a detection device has been described, the alignment device operates on a similar principle: providing radiation from a source to a target (eg, an alignment grating), using a detector to detect diffracted radiation, and analyzing The radiation is detected to determine alignment.

FIG. 5 is a schematic diagram illustrating an example alignment system 100. Alignment system 100 includes a coherent illumination system 104, such as a laser, that provides electromagnetic radiation 106 to helium 108. At least a portion of the electromagnetic radiation is reflected from the coating 110 to illuminate the alignment mark or target 112. The alignment mark or target 112 can have one hundred and eighty degrees of symmetry. One hundred and eighty degrees of symmetry means that when the alignment mark 112 (which is also referred to as "target") is rotated by one hundred and eighty degrees about an axis of symmetry perpendicular to the plane of the alignment mark 112, the alignment mark is substantially Same as above without the rotation alignment mark. The axis to which this is true is called the axis of symmetry. Alignment marks 112 are placed on a substrate or wafer W that can be coated with a radiation sensitive film.

The substrate W is placed on the substrate stage WT. The substrate table WT can be scanned in the direction indicated by the arrow 114. Electromagnetic radiation reflected by the self-aligned indicia 112 is transmitted through the crucible 108 and collected by the image rotation interferometer 116. It should be understood that there is no need to form a good quality image, but the characteristics of the alignment mark should be resolved. Image rotation interferometer 116 can be any suitable collection of optical components, and in one embodiment is a combination of turns that form two images of alignment marks, one of the images relative to the other Rotating one hundred and eighty degrees, and then recombining the two images in an interferometric manner such that when aligned with the alignment target 112, the electromagnetic radiation will interfere constructively or destructively in the sense of polarization or in the sense of amplitude. Thereby, the center of the alignment mark 112 can be easily detected. The optical ray passing through the center of rotation established by the interferometer 116 defines the sensor alignment axis 118.

The detector 120 receives electromagnetic radiation from the image rotation interferometer 116. The detector 120 then provides one or more signals to the signal analyzer 122. The signal analyzer 122 is coupled to the substrate table WT or its position sensor IF such that the position of the substrate table WT is known when determining the center of the alignment mark 112. Therefore, the position of the alignment mark 112 is extremely accurately known with reference to the substrate stage WT. Alternatively, the location of the alignment sensor 100 can be known such that the reference alignment sensor 100 The center of the alignment mark 112 is known. Therefore, the exact portion of the center of the alignment target 112 is known with respect to the reference position.

In an embodiment, the illumination system 104 can include a 4-color laser module assembly (LMA) and a polarization multiplexer (PMUX). The LMA is configured to produce four distinct lasers. For example, the LMA30 can produce a 532 nm green wavelength radiation beam, a 633 nm red wavelength radiation beam, a 780 nm near infrared wavelength radiation beam, and a 850 nm far infrared wavelength radiation beam. The polarization multiplexer is configured to multiplex the four laser beams produced by the LMA into a single polarized beam of light for aligning the illumination source of system 100. Instead of the construction of illumination system 104 just described, illumination system 104 can have different configurations as described herein.

For example, many optical systems (eg, lithographic alignment and/or overlay sensors) benefit from high brightness radiation having a broad spectral width and a short coherence length. FIG. 6 schematically depicts an embodiment of a short coherence length, wide spectral width radiation system 500. System 500 includes a visible (eg, green) laser 501 that provides input radiation to input 505a of fiber 505 via one or more optical elements 503, one or more optical elements 503 including (eg, but Not limited to) collimators, attenuators, and/or coupling lenses. Output radiation is obtained at the output 505b of the fiber 505. The output radiation is then provided to an output optic 507, which may include, for example, a collimator, a lens, a chirp, a grating, an etalon, a spectral filter, or other optical component. In an embodiment, a wavelength sensitive optic (such as a spectral filter, an etalon, or a spectrally dispersive optic, such as a chirp or grating coupled to a spatial filter, wherein the passband wavelength of the optics is at the output radiation The spectrum can be placed after the fiber to select and/or control the wavelength and spectral width of the spectrally broadened radiation for downstream use. Thus, in one embodiment, a band pass filter is provided at or downstream of the output of the fiber to reduce and/or control the wavelength and spectral width of the output radiation. For example, the spectral width can be greater than the desired spectral width, and the bandpass filter can reduce the spectral width or select a certain spectral width of the output spectral width. In an embodiment, the band pass filter is adjustable to Provide different amounts of filtering and at different wavelengths. As an example of an adjustable filter, an exchanger can be provided to place a selected one of the plurality of filters into the beam path, each filter being specific to a different wavelength or spectral width amount. The exchanger may be a rotating wheel that rotates different filters into the beam path. The radiation from the output optics 507 is then provided to, for example, a target on the substrate W for optical metrology.

In one embodiment, the optical fiber 505 is an optical fiber having a refractive index change across its cross section. In one embodiment, fiber 505 is a standard step index or gradient index fiber having, for example, a cylindrical cross section. The optical fiber 505 can be a single mode fiber, a small mode fiber, or a multimode fiber. In one embodiment, fiber 505 is a single mode, vermiculite based fiber. In an embodiment, the optical fiber 505 has a refractive index that varies depending on the intensity of the radiation. In an embodiment, the optical fiber 505 may be made of one or more materials, for example, selected from undoped or doped vermiculite, fluorozirconate, fluoroaluminate, chalcogenide glass, plastic or depending on One or more materials of any other material that has a refractive index that varies in intensity of the radiation. In an embodiment, the optical fiber 505 can comprise a photonic crystal that is structured and/or is a bandgap fiber. Ideally, however, in one embodiment, the optical fiber 505 is not primarily a photonic crystal. Ideally, however, in one embodiment, the fiber 505 is not primarily structured. Ideally, however, in one embodiment, the fiber 505 is not a bandgap fiber.

In one embodiment, spectral broadening results in a spectral width greater than 0.5 nanometers around the nominal wavelength. In one embodiment, spectral broadening results in a spectral width greater than 2 nanometers around the nominal wavelength. In embodiments using visible lasers, the spectral width is relatively wide. In one embodiment, spectral broadening causes a supercontinuum. In one embodiment, the supercontinuum zone has a spectral width greater than or equal to about 350 nanometers, greater than or equal to 400 nanometers, greater than or equal to 500 nanometers, or greater than or equal to 900 nanometers around the nominal wavelength. In one embodiment, the supercontinuum zone has a spectral width selected from the range of from about 400 nanometers to 900 nanometers.

In an embodiment, the spectral width is symmetric about a nominal wavelength. In an embodiment, the spectral width is asymmetrical about a nominal wavelength. In an embodiment, the spectral width is asymmetrical In this case, the spectral width is about 5% or less, about 10% or less, about 20% or less, about 30% or less, or about 40% or less is lower than the nominal wavelength.

Generally, the amount of spectral broadening is proportional to the length of the fiber 505 and larger for shorter pulses, where the intensity changes at a faster rate in time. Thus, different bandwidths and powers of visible (eg, green) radiation that are produced in the system can be achieved by varying the power of the laser, the pulse width of the laser, the core size of the fiber, and/or the length of the fiber. . The spectral width of the output radiation can increase as the input pump power is higher and/or the fiber length is longer.

The spectral width of the radiation system described herein can be reliably and easily modulated by, for example, modulating one or more parameters of an input radiation source (eg, a green laser). For example, the spectral width can be increased by reducing the pulse width (ie, increasing the rate of intensity change) or increasing the intensity of the input radiation, or by increasing the pulse width (ie, reducing the rate of change of the radiation intensity) or Reduce the intensity of the input radiation to reduce the spectral width. Additionally or alternatively, the spectral width may be increased by increasing the length of the fiber through which the radiation is transmitted or by increasing the nonlinear optical coefficient of the fiber, or by reducing the length of the fiber through which the radiation is transmitted or by reducing the electro-optic coefficient of the fiber. Small spectral width.

As another example, FIG. 7 illustrates an example of a broadband tunable radiation system 700. In an embodiment, system 700 includes a broadband radiation source, such as an arc lamp or a supercontinuum source. In an embodiment, system 700 includes a fiber amplifier 710 and a photonic crystal fiber 720. System 700 is generated using a supercontinuum region that produces a narrow band of radiation from source radiation (such as fiber amplifier 710) that is converted to radiation having a continuous, wide and flat spectral bandwidth with low temporal coherence While maintaining the high spatial coherence of the source radiation. Spectral broadening can be accomplished by propagating optical pulses of radiation through a strongly nonlinear device, such as photonic crystal fiber 720. Photonic crystal fiber 720 has dispersion characteristics that allow for strong nonlinear interactions over significant lengths of the fiber. The supercontinuum laser radiation system can be used as an illumination source that provides high spatial coherence and temporal coherence.

System 700 can include or be coupled to a tunable filter 730 (eg, an acousto-optic tunable filter (AOTF)) and can include or be coupled to a relay and mechanical interface 740. The tunable filter 730 implements, for example, the selection of only the desired wavelength set point (typically up to a few nanometers or a few nanometers wide). Filter 730 can be configured to block out-of-band wavelengths to levels that would not adversely affect downstream optical modules (eg, alignment systems). The relay and mechanical interface 740 is configured to adjust the profile of the emitted radiation beam.

According to an embodiment, the emitted radiation can be tuned to a particular narrow band wavelength throughout a continuous, flat and wide spectral range. This tunability allows selection of wavelengths that fall within the spectral gaps between conventional discrete wavelength set points or outside of the conventional discrete wavelength set points. In an embodiment, the desired wavelength set point of the tunable filter can be dynamically set such that the desired wavelength set point matches, for example, a relatively narrow spectral band of alignment or other metrology marks. In this way, rapid fine-tuning by the alignment system can be provided, for example, in-service tuning.

Further description of the embodiment of Figure 7 can be found in U.S. Patent No. 8,508,736, which is incorporated herein by reference.

Thus, a radiation system having a relatively wide spectral width around the nominal wavelength can be provided. The radiation system can be provided by coupling visible laser output radiation in the visible region of the electromagnetic spectrum to the input of the fiber and spectrally broadening the radiation in the fiber such that the output radiation at the output of the fiber Having a spectral width of at least 0.5 nanometers around a nominal wavelength of visible output radiation from the laser. In order to achieve a spectral width of at least 0.5 nm around the nominal wavelength, the parameters of the variable laser and/or the parameters of the fiber are tunable. For example, the length of the fiber and/or the core size can be adjusted to provide the spectral width of the output radiation. Additionally or alternatively, parameters of the laser (such as average power, peak power, pulse width, pulse resolution, pulse repetition rate, or any combination selected from the above) may be adjusted to provide a spectral width of the output radiation. In one embodiment, the spectral width is at least about 400 nanometers around the nominal wavelength.

Referring to Figure 8, a schematic depiction of how a radiation system can be optically coupled to another optical module is schematically depicted. For example, the radiation system 800 (such as the radiation system 104 of FIG. 5, the radiation system 500 of FIG. 6, or the radiation system 700 of FIG. 7) is connected by fiber 810 via a connection 825 (which may be a fiber optic input coupler, fiber output) A computer, fiber optic connector, etc.) is optically coupled to another fiber 815. In addition, fiber 820 is optically coupled to additional optical element 825 by connection 825. In addition, the optical component is part of an optical module 830, such as a detection device or other metrology device described herein, or optically coupled to optical module 830. Additionally optical element 825 can be an optical fiber. Similarly, fibers 810 and 815 need not be optical fibers. Therefore, one or more sides of the optical connection 825 need not be optical fibers. In one embodiment, one or more sides of optical connection 825 are optical fibers. In an embodiment, all sides of the optical connection 825 are optical fibers. In an embodiment, optical connection 825 can comprise a combination of fiber optic and non-fiber optic components. Moreover, although the optical connection 825 is shown downstream of the radiation system 800 and upstream of the optical module 830 for convenience, one or more optical connections 825 may be provided within the radiation system 800 and/or within the optical module 830. . Additionally, a single connection 825 can be provided between the radiation system 800 and the optical module 830.

It may be desirable to provide a connection 825 for optically coupling portions of the optical fibers to each other at least or for optically coupling at least optical fibers to another component. In particular, it is desirable to provide a connection that provides high coupling efficiency, stability, and/or no special alignment.

In an embodiment, this connection may need to be implemented for optically coupling the PCF to the PCF, where, for example, the fibers 810 and 815 are PCFs. Photonic crystal fibers (PCF) enable delivery of single mode illumination from radiation system 800 to optical module 830 (eg, an alignment system as described herein).

In order to achieve, for example, a connection with high coupling efficiency, stability and/or no special alignment, a dissipative coupling is provided between the optical components (in detail, in one embodiment, between portions of the PCF) connection. In one embodiment, a PCF having a lenticular face is provided, the PCF being dissipatively coupled to a PCF having a pyramidal facet selected from 400 nm to High coupling efficiency (>90%) is achieved at one or more wavelengths in the 900 nm range. By using dissipative coupling, physical contact may not be required in this PCF-to-PCF connection between the respective PCF interfaces, thus reducing, for example, the risk of contamination damage and/or contact damage associated with physical contact between the PCFs. Moreover, this connection is substantially less sensitive to alignment errors than, for example, an optical fiber that is optically coupled by one or more lenses between PCFs.

Referring to Figure 9, a schematic diagram of an embodiment of a connection between PCF 900 and portions of PCF 910 is depicted. Although PCF 900 and PCF 910 are shown to be of the same type, PCF 900 or PCF 910 may be a photonic crystal fiber of a different type than another PCF.

The PCF 900 includes a lenticular face 920. In this embodiment, the lenticular face 920 belongs to the core of the PCF 900. In an embodiment, the core is cylindrical, but may be another shape such as a crucible (eg, a rectangular crucible). In this embodiment, the core of PCF 900 is surrounded by a "cladding" layer 930, which as described may be, for example, a regular array of holes (filled with being formed compared to the holes) The material in which it has a material having a different refractive index, for example, has an opening for, for example, air, which surrounds the "defects" that form the core, such as the missing holes in the array. In an embodiment, layer 930 can have a slope of its facet face extending from the lenticular face toward its outer surface, as shown in FIG. As shown in FIG. 11, layer 930 can have a flat facet, that is, about 90 degrees from the optical axis of PCF 900.

The lenticular face 920 can have one or more radii R that define an outer surface of the lenticular face 920. In an embodiment, the radius R is greater than zero and less than or equal to about 50 microns. The lenticular surface may be fabricated by etching (e.g., chemical etching), thermal programming, polishing procedures, lithography (e.g., radiation exposure using a resist and a resist), or a combination selected from the above. In one embodiment, the core may be selectively treated to separate from the "cladding" layer using, for example, a reticle to form a lenticular surface. In one embodiment, the lenticular surface 920 has a pedestal having a lateral dimension D (eg, width or diameter if the pedestal is circular). In one embodiment, the pedestal has the same lateral dimensions as the core of the PCF 900, particularly, for example, in the lenticular surface 920 integral with the core of the PCF 900 In case. In one embodiment, the lateral dimension D (e.g., diameter) has a range from 2 microns to 20 microns that is the same as the lateral dimension of the core of the PCF 900.

The PCF 910 includes a pyramidal dome 940. In this embodiment, the pyramidal dome 940 belongs to the core of the PCF 910. In this embodiment, the core of PCF 910 is surrounded by a "cladding" layer 950, which as described may be, for example, a regular array of holes (filled with being formed compared to the holes) The material in which it has a material having a different refractive index, for example, has an opening for, for example, air, which surrounds the "defects" that form the core, such as the missing holes in the array. As shown in FIG. 9, layer 950 can have a flat facet, that is, about 90 degrees from the optical axis of PCF 910. In an embodiment, layer 950 may have a slope of its facet surface extending from the lenticular face toward its outer surface, similar to that shown for layer 930 in FIG.

The pyramidal facet 940 can have a length L. In an embodiment, the length L is greater than zero and less than or equal to about 100 microns. The pyramidal face 940 has a face 960 at the end facing the lenticular face 920. The face 960 can be flat or curved. In an embodiment, the pyramidal dome 940 can have a circular perimeter and thus form a conical configuration. In this case, the face 960 may have a rounded perimeter (but may be shaped to have a different perimeter). In an embodiment, the pyramidal facets 940 can have a rectangular perimeter and thus form a pyramidal structure. In this case, the face 960 may have a rectangular perimeter (but may be shaped to have a different perimeter). In an embodiment, the pyramidal dome 940 can have a different perimeter shape that includes a peripheral shape that varies (eg, continuously) from one end to the other. As mentioned above, the pyramidal facets 940 and the facets 960 can have different perimeter shapes. The pyramidal dome can be fabricated by etching (e.g., chemical etching), thermal programming, polishing procedures, lithography (e.g., radiation exposure using a resist and a resist), or a combination selected from the above. In one embodiment, the core may be selectively treated to separate from the "cladding" layer using, for example, a reticle to create a pyramidal facet.

The open gap (eg, air gap) between the lenticular face 920 and the face 960 of the pyramidal face 940 may be the distance Z. In an embodiment, the distance Z is greater than 0 and less than or equal to about 100 micrometers. Meter. Thus, in this embodiment, radiation from the lenticular surface 930 of the PCF 900 propagates across the gap distance Z into the pyramidal face 940 of the PCF 910. The focused light field from lenticular surface 920 matches the shape of the localized evanescent wave induced by cone face 960. Thus, the radiation field is transmitted to the face 960 of the pyramidal face 940 and through the face 960 by dissipation coupling. Wave propagation inside the structure of the pyramidal dome 940 is confined within the cone by total internal reflection.

In order to achieve high coupling efficiency, the face 960 of the pyramidal face 940 should be located at or near the focal position of the lenticular face 930. In one embodiment, the transverse dimension S of the facet 960 of the pyramidal face 940 (eg, width or diameter if the facet 960 is circular) is greater than or equal to zero and less than or equal to about 100 nanometers. In order to achieve high coupling efficiency. In an embodiment, the facet 960 has an area greater than or equal to zero and less than or equal to about 10,000 square nanometers. In an embodiment, the facet 960 has a circumference greater than or equal to zero and less than or equal to about 400 nanometers. The shape of the cone of the outer surface of the pyramidal surface 940 may be a hyperbolic cone, an exponential cone, a parabolic cone, and/or a linear cone. The shape of the cone may not significantly affect the coupling efficiency.

In one embodiment, the pyramidal face 940 has a base having a lateral dimension D (eg, width or diameter if the base is circular). In one embodiment, the pedestal has the same lateral dimensions as the core of the PCF 910, particularly, for example, where the pyramidal dome 940 is integral with the core of the PCF 910. In one embodiment, the lateral dimension D (eg, diameter) has a range from 2 microns to 20 microns, which may be the same as the lateral dimension of the core of the PCF 910. In an embodiment, the pyramidal facets have an aspect ratio L/D in the range of 5 to 10. In an embodiment, the pyramidal facets have an aspect ratio L/S in the range of 500 to 1000.

To provide and maintain a gap between the lenticular face 920 and the face 960, a structure 970 is provided to maintain the lenticular face 920 and the face 960 spaced apart from each other. The structure 970 can be, for example, a sleeve, another "wrapping" layer, for separately holding one of the PCFs 900, 910 Or multiple frames, and so on.

It is true that PCF 900 and PCF 910 are not shown to scale, and several parts have been omitted to assist in the clarity of the description. For example, the "cladding" layers 930 and 950 will typically be significantly proportionally thicker than the "cladding" layer shown. As another example, PCF 900 and PCF 910 will have a much longer length than the PCF shown.

Referring to Figure 10, the lenticular facets 920 can have different configurations. Referring to Fig. 10(A), the maximum lens radius R is limited by the lateral dimension (e.g., radius) of the core of the PCF 900, for example, from the optical axis of the PCF 900, the lens radius R is less than or equal to the radius of the core of the PCF 900. . This lenticular surface 920 configuration is the same as that shown in FIG. In Figure 10(b), the lens is larger than the lateral dimension (e.g., radius) of the core of PCT 900. That is, the lens radius R is greater than the radius of the core of the PCF 900. This can be accomplished by, for example, growing, expanding or flattening a portion of the core at the end (i.e., "expanding" the end) and then processing the portion as discussed above to provide a lenticular surface 920. . Optionally, the core of PCF 900 can be initially constructed to have a wider portion that is then used to fabricate lenticular surface 920 by processing as described above. Both configurations can use a suitable cone-shaped face 940 to achieve high coupling efficiency.

Referring to Figure 11, an example of a separate lenticular face 920 and a separate pyramidal face 940 is depicted; structure 970 is omitted for convenience. In an embodiment, a separate lenticular face 920 or a separate pyramidal face 940 may be provided. The other of the faces 920 or 940 can be integrally formed as described above and depicted, for example, in FIG. In one embodiment, the individual lenticular facets 920 and the individual pyramidal facets 940 have the same or similar refractive index as the respective optical component to which they are attached (eg, the core of the PCF) (eg, from the same material) production). The separate lenticular facets 920 and the individual pyramidal facets 940 can be, for example, glued, thermally bonded, etc. to their respective optical components (eg, the core of a PCF). In one embodiment, the bonding material has respective optical components attached to its respective individual lenticular surface 920 and individual pyramidal surface 940 and separate lenticular surface 920 and individual pyramidal surface 940 The same or similar refractive index. In an embodiment, the individual lenticular facets 920 can have a lateral dimension that is greater than the lateral dimension of the core of the PCF 900, which can, for example, facilitate manufacturing.

Thus, in an embodiment, an alignment (or other metrology) sensor is provided that includes one or more connections as described herein to achieve, for example, single mode illumination from a radiation source to the sensor Delivery of one or more optical modules. In an embodiment, the sensor can operate using one or more illumination wavelengths selected from the range of about 400 nanometers to 900 nanometers, and thus, the connection can transmit one or more selected from the same range. Wavelengths. In one embodiment, one or more of the connections of the alignment (or other metrology) sensor comprise a photonic crystal fiber (PCF), and thus, in one embodiment, the connection is a PCF to PCF connection. In an embodiment, the connection may be part of a telecommunications system or device in which analog or digital data is encoded in the radiation transmitted via the connection. The connection can be part of an optical communication transmitter that can connect the optical communication transmitter to another portion of the optical communication system, can be part of an optical communication receiver, and can connect the optical communication receiver to another portion of the optical communication system. Can be part of an optical communication channel that can connect an optical communication channel to another part of an optical communication system, can be part of an optical communication amplifier, repeater or router, or can connect an optical communication amplifier, repeater or router to Another part of the optical communication system. For optical communication systems, the system can operate using one or more wavelengths selected from the range of about 700 nanometers to 2300 nanometers (eg, 800 nanometers to 1800 nanometers, for example, 1200 nanometers to 1600 nanometers). And, therefore, the connection can transmit one or more wavelengths within their range.

As used herein, "visible" or "green" refers to the electromagnetic spectral color or range of colors corresponding to the wavelength of the radiation emitted by the laser. Thus, a green laser can refer to a laser having a nominal wavelength selected from the range of from about 495 nanometers to about 570 nanometers. In certain embodiments, as shown in Figure 6, the green laser can have a wavelength of about 532 nm. In other embodiments, the green laser can have a wavelength of about 515 nanometers or about 520 nanometers. Lasers can be referred to as having a laser having a nominal wavelength selected from the range of about 390 nanometers to about 700 nanometers.

In one embodiment, a system is provided comprising a first component and a second component optically coupled, wherein: the first component has a lenticular face, the second component has a pyramidal face, a lenticular face and a cone The jaw faces are spaced apart from each other, and the lenticular face and the pyramidal face are operable to establish a dissipative wave coupling between the first component and the second component.

In one embodiment, a connection is provided for an optical component, the connection comprising: a first optical component comprising a lenticular surface; and a second optical component comprising a pyramidal structure, a pyramidal structure and a lenticular surface Separated to achieve dissipation coupling.

An embodiment of the invention may take the form of a computer program containing one or more sequences of machine readable instructions describing a method as disclosed herein; or a data storage medium (eg, semiconductor memory, Disk or disc), the data storage medium has the computer program stored therein. In addition, machine readable instructions may be embodied in two or more computer programs. Two or more computer programs can be stored on one or more different memory and/or data storage media.

Any of the controllers described herein can operate individually or in combination when one or more computer programs are read by one or more computer processors located in at least one component of the lithography apparatus. The controllers can have any suitable configuration for receiving, processing, and transmitting signals, either individually or in combination. One or more processors are configured to communicate with at least one of the controllers. For example, each controller can include one or more processors for executing a computer program comprising machine readable instructions for the methods described above. The controllers may include data storage media for storing such computer programs, and/or hardware for storing such media. Thus, the controller can operate in accordance with machine readable instructions of one or more computer programs.

Although the use of the embodiments in the context of the content of optical lithography can be specifically referenced above, it should be appreciated that embodiments of the present invention can be used in other applications (eg, imprint lithography), and when the context of the content allows It is not limited to optical lithography. In imprint lithography, the configuration in the patterned device defines the pattern produced on the substrate. The configuration of the patterned device can be pressed into The resist is supplied to the resist layer of the substrate, and the resist is cured by applying electromagnetic radiation, heat, pressure, or a combination thereof. After the resist is cured, the patterned device is removed from the resist to leave a pattern therein.

Moreover, although reference may be made herein specifically to the use of lithographic apparatus in IC fabrication, it should be understood that the lithographic apparatus described herein may have other applications, such as fabricating an integrated optical system for magnetic domain memory. Guide and detection patterns, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads, and the like. Those skilled in the art should understand that in the context of the content of such alternative applications, any use of the terms "wafer" or "die" herein may be considered as the more general term "substrate" or "target portion". Synonymous. The substrates referred to herein may be processed before or after exposure, for example, in a coating development system (typically applying a resist layer to the substrate and developing the exposed resist), metrology tools, and/or inspection tools. . Where applicable, the disclosure herein may be applied to such and other substrate processing tools. In addition, the substrate can be processed more than once, for example to create a multilayer IC, such that the term substrate as used herein may also refer to a substrate that already contains multiple processed layers.

As used herein, the terms "radiation" and "beam" encompass all types of electromagnetic radiation, including near-infrared radiation (eg, radiation having a wavelength in the range of from about 700 nm to about 1400 nm), visible radiation ( For example, having a range of from about 390 nm to 700 nm (eg, about 633 nm) or from about 495 nm to about 570 nm (eg, about 515 nm, about 520 nm or Radiation (wavelength of about 532 nm), ultraviolet (UV) radiation (for example, having a wavelength of about 365 nm, 355 nm, 248 nm, 193 nm, 157 nm or 126 nm) And extreme ultraviolet (EUV) radiation (for example, having a wavelength in the range of 5 nm to 20 nm), and a particle beam such as an ion beam or an electron beam.

The term "lens", as the context of the context permits, may refer to any or a combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic, and electrostatic optical components.

The above description is intended to be illustrative, and not restrictive. Therefore, it will be apparent to those skilled in the art that the present invention may be modified without departing from the scope of the appended claims. For example, one or more aspects of one or more embodiments can be combined with one or more aspects of one or more other embodiments or one or more other embodiments. Replace the situation. Therefore, the adaptations and modifications are intended to be within the meaning and scope of the equivalents of the disclosed embodiments. It is understood that the phraseology or terminology herein is for the purpose of description and description The breadth and scope of the present invention should not be limited by any of the exemplary embodiments described above, but only by the scope of the following claims and their equivalents.

900‧‧‧Photonic Crystal Fiber (PCF)

910‧‧‧Photonic Crystal Fiber (PCF)

920‧‧‧ lenticular surface

930‧‧‧"Covering" layer

940‧‧‧ cone-shaped face

950‧‧‧"Covering" layer

960‧‧‧琢

970‧‧‧structure

D‧‧‧ transverse size

L‧‧‧ length

R‧‧‧ Radius

S‧‧‧ horizontal size

Z‧‧‧ distance

Claims (39)

A system comprising: a first component comprising a lenticular face; and a second component optically coupled to the first component, the second component comprising a pyramidal facet, the cone The flank faces are spaced apart from the lenticular face to establish evanescent wave coupling between the first component and the second component. The system of claim 1, wherein the first optical component and/or the second optical component comprises an optical fiber. The system of claim 2, wherein the first optical component and/or the second optical component comprises a photonic crystal fiber. The system of claim 3, wherein the first optical component and the second optical component comprise a photonic crystal fiber. The system of any one of claims 2 to 4, wherein a lens radius of one of the lenticular faces is less than or equal to a distance from a center of the core of the fiber to an outer periphery of the core. The system of any one of claims 2 to 4, wherein a lens radius of the lenticular surface is greater than a distance from the center of the core of the fiber to the outer periphery of the core. The system of any one of claims 2 to 4, wherein the fiber is a single mode fiber. The system of any one of claims 1 to 4, wherein one of the front facets of the pyramidal face is located approximately at a focus position of the lenticular face. The system of any one of claims 1 to 4, wherein one of the front facets of the pyramidal facet is greater than or equal to 0 and less than or equal to about 100 nanometers. The system of any one of claims 1 to 4, wherein the lenticular surface is a structure that is attached to the first optical component that is separate from the first optical component. The system of any one of claims 1 to 4, wherein the lenticular surface is integral with the first optical component. The system of any one of claims 1 to 4, wherein the pyramidal facet is a structure that is attached to the second optical component that is separate from the second optical component. The system of any one of claims 1 to 4, wherein the pyramidal facets are integral with the second optical component. The system of any one of claims 1 to 4, wherein the spectral width of the radiation passing through the connection is about 400 nm or more. The system of any one of claims 1 to 4, wherein the radiation passing through the connection is in the range of from about 500 nm to about 900 nm. The system of any one of claims 1 to 4, wherein the wave propagation inside the pyramidal dome is confined within the cone by total internal reflection. The system of any one of claims 1 to 4, wherein a gap between the lenticular surface and the pyramidal surface is greater than zero and less than or equal to about 100 microns. The system of any one of claims 1 to 4, wherein one of the pyramidal facets has a length greater than zero and less than or equal to about 100 microns. The system of any one of claims 1 to 4, wherein a periphery of one of the lenticular faces and a periphery of the pyramidal face are circular. A spectrally broadened radiation device comprising: a laser configured to output emitted radiation through one of the lasers; an optical fiber optically coupled to the output of the laser, the optical fiber having The laser receives one of the inputs of the radiation and has an output for providing spectrally broadened output radiation, the optical fiber configured to spectrally broaden the radiation from the laser to at least 0.5 around a nominal wavelength A spectral width of one of the nanometers; and a system according to any one of claims 1 to 19. A detecting device comprising: a radiation device configured to provide radiation; an output for providing the radiation from the radiation device to a diffraction target; a detector configured to receive the wound from the target Radiation radiation; and the system of any one of claims 1 to 19. The detecting device of claim 21, wherein the detector is configured to determine alignment of the two or more objects in response to the received diffracted radiation. An alignment sensor comprising: an output for providing radiation from a radiation device to a target; a detector configured to receive radiation from the target; a control system Configuring to determine the alignment of two or more objects in response to the received radiation; and the system of any one of claims 1 to 19. A communication device configured to transmit radiation encoded using a digital or analog data, the communication device comprising the system of any one of claims 1 to 19. A method of optically coupling an optical component, the method comprising: propagating a dissipative wave of radiation across a gap between a lenticular surface of a first optical component and a pyramidal surface of a second optical component. The method of claim 25, wherein the first optical component and/or the second optical component comprises an optical fiber. The method of claim 26, wherein the first optical component and/or the second optical component comprises a photonic crystal fiber. The method of claim 27, wherein the first optical component and the second optical component comprise a photonic crystal fiber. The method of any one of claims 25 to 28, wherein one of the front facets of the pyramidal face is located approximately at a focus position of the lenticular face. The method of any one of claims 25 to 28, wherein one of the front facets of the pyramidal facet is greater than or equal to 0 and less than or equal to about 100 nanometers. The method of any one of claims 25 to 28, wherein the spectral width of the radiation passing through the connection is about 400 nm or more. The method of any one of claims 25 to 28, wherein the radiation passing through the connection is in the range of from about 500 nm to about 900 nm. The method of any one of claims 25 to 28, wherein the radiation passing through the connection is in the range of about 800 nm to 1800 nm. The method of any one of claims 25 to 28, wherein a gap between the lenticular surface and the pyramidal surface is greater than 0 and less than or equal to about 100 microns. The method of any one of claims 25 to 28, wherein one of the pyramidal facets has a length greater than zero and less than or equal to about 100 microns. The method of any one of claims 25 to 28, wherein a periphery of one of the lenticular faces and a periphery of the pyramidal face are circular. The method of any one of claims 25 to 28, further comprising providing the radiation to a diffraction target and receiving the diffracted radiation from the target at a detector. The method of claim 37, further comprising determining alignment of the two or more objects in response to the received diffracted radiation at the detector. The method of any one of claims 25 to 28, wherein the radiation is encoded using digital or analog data.