CN114531924A - 量子点发光二极管及其制备方法、显示装置 - Google Patents

量子点发光二极管及其制备方法、显示装置 Download PDF

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Publication number
CN114531924A
CN114531924A CN202080002050.7A CN202080002050A CN114531924A CN 114531924 A CN114531924 A CN 114531924A CN 202080002050 A CN202080002050 A CN 202080002050A CN 114531924 A CN114531924 A CN 114531924A
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China
Prior art keywords
electrode
electron
layer
quantum dot
metal oxide
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Pending
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CN202080002050.7A
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English (en)
Inventor
梅文海
张宜驰
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Publication of CN114531924A publication Critical patent/CN114531924A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/166—Electron transporting layers comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本公开提供了一种量子点发光二极管，包括：第一电极、第二电极、设置在所述第一电极与所述第二电极之间的量子点发光层、设置在所述量子点发光层和所述第一电极之间的电子传输层，以及设置在所述电子传输层和所述量子点发光层之间的电子缓冲层，所述电子传输层与所述电子缓冲层包括相同的金属氧化物，所述电子缓冲层中的氧缺位浓度大于所述电子传输层中的氧缺位浓度。本公开实施例还提供了一种量子点发光二极管的制备方法和显示装置。

Description

PCT国内申请，说明书已公开。

Claims (17)

  1. PCT国内申请，权利要求书已公开。
CN202080002050.7A 2020-09-23 2020-09-23 量子点发光二极管及其制备方法、显示装置 Pending CN114531924A (zh)

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PCT/CN2020/117077 WO2022061574A1 (zh) 2020-09-23 2020-09-23 量子点发光二极管及其制备方法、显示装置

Publications (1)

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CN114531924A true CN114531924A (zh) 2022-05-24

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US (1) US20220320454A1 (zh)
CN (1) CN114531924A (zh)
WO (1) WO2022061574A1 (zh)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105576139B (zh) * 2016-01-06 2017-11-07 京东方科技集团股份有限公司 一种量子点电致发光二极管及其制备方法、显示器
CN109643766B (zh) * 2016-09-13 2022-02-11 罗门哈斯电子材料韩国有限公司 包含电子缓冲层和电子传输层的有机电致发光装置
CN106816545B (zh) * 2017-03-23 2021-03-02 京东方科技集团股份有限公司 量子点发光二极管及其制作方法、阵列基板、显示装置
US11342524B2 (en) * 2018-03-30 2022-05-24 Sharp Kabushiki Kaisha Light emitting element, light emitting device, and apparatus for producing light emitting element
KR102575481B1 (ko) * 2018-04-24 2023-09-07 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
CN109545996A (zh) * 2018-11-28 2019-03-29 河南大学 一种量子点发光二极管及制备方法
CN110112302A (zh) * 2019-01-17 2019-08-09 华南理工大学 一种以Al2O3薄膜为缓冲层的量子点发光二极管及其制备方法
CN114695826A (zh) * 2020-12-31 2022-07-01 Tcl科技集团股份有限公司 调控氧化锌的电子迁移率的方法

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US20220320454A1 (en) 2022-10-06

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