CN114523407A - Indium phosphide single crystal preparation system and method - Google Patents

Indium phosphide single crystal preparation system and method Download PDF

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Publication number
CN114523407A
CN114523407A CN202210094548.1A CN202210094548A CN114523407A CN 114523407 A CN114523407 A CN 114523407A CN 202210094548 A CN202210094548 A CN 202210094548A CN 114523407 A CN114523407 A CN 114523407A
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CN
China
Prior art keywords
polishing
polishing head
motor
temperature value
indium phosphide
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Pending
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CN202210094548.1A
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Chinese (zh)
Inventor
潘功寰
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Suzhou Zhongdi Semiconductor Material Co ltd
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Suzhou Zhongdi Semiconductor Material Co ltd
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Priority to CN202210094548.1A priority Critical patent/CN114523407A/en
Publication of CN114523407A publication Critical patent/CN114523407A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • B24B41/04Headstocks; Working-spindles; Features relating thereto
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • B24B41/06Work supports, e.g. adjustable steadies
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00Drives or gearings; Equipment therefor
    • B24B47/20Drives or gearings; Equipment therefor relating to feed movement
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00Arrangements for automatic control of a series of individual steps in grinding a workpiece
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention discloses a system and a method for preparing indium phosphide single crystal, which comprises a support frame, a polishing component and a displacement component which are arranged on the support frame, the polishing component comprises a first fixed table, a first motor is fixedly arranged on the first fixed table, the output end of the first motor is connected with a first main shaft in a matching way, the first main shaft is connected with a polishing head in a matching way, when the first motor is driven to rotate, the polishing head can rotate along with the first spindle, the polishing assembly further comprises a second fixing table and a gear mounting table, the second motor is fixedly arranged on the second fixed table, the output end of the second motor is connected with the second main shaft in a matching way, the system is stable in the transmission process, the transmission efficiency is high, the control is easy, the machining efficiency is guaranteed, meanwhile, the quality of the machined part is guaranteed, the reliability of the machined part is improved, and the economic benefit is improved.

Description

Indium phosphide single crystal preparation system and method
Field of application
The invention relates to the field of indium phosphide material preparation equipment, in particular to a system and a method for preparing an indium phosphide single crystal.
Background
The indium phosphide single crystal has higher electron transfer rate and good optical performance, is a good material for preparing ultrahigh-speed and ultrahigh-frequency devices, photoelectric devices and photoelectric integrated circuits, and is widely applied to the photoelectric devices as an important epitaxial layer substrate material. Indium phosphide is used as a semiconductor substrate, and needs to be subjected to the technical processes of single crystal growth, slicing, outer circle chamfering, grinding, polishing, cleaning, packaging and the like, and in the slicing and grinding processes, a certain mechanical damage layer is generated on the surface of an indium phosphide wafer due to the mechanical action of a saw wire and an abrasive material. In order to remove the surface defects introduced by the previous process, a final polishing process is required, because the surface quality determines the quality of the subsequent epitaxial layer and finally affects the performance of the indium phosphide device. However, the existing indium phosphide polishing equipment still has many defects, one of which is that when a plurality of workpieces are processed simultaneously, a plurality of motors are generally required to independently control the workpieces, and the plurality of workpieces cannot rotate synchronously, so that the plurality of workpieces have different defects during processing; and secondly, when the workpiece is processed, the processing parameters can not be intelligently controlled according to the temperature or pressure during processing.
Disclosure of Invention
The invention overcomes the defects of the prior art and provides a system and a method for preparing indium phosphide single crystals.
In order to achieve the aim, the invention adopts the technical scheme that: an indium phosphide single crystal preparation system comprises a support frame, and a polishing component and a displacement component which are arranged on the support frame;
the polishing assembly comprises a first fixing table, a first motor is fixedly mounted on the first fixing table, the output end of the first motor is connected with a first main shaft in a matching mode, a polishing head is connected to the first main shaft in a matching mode, and when the first motor is driven to rotate, the polishing head can rotate along with the first main shaft;
the polishing assembly further comprises a second fixing table and a gear mounting table, a second motor is fixedly mounted on the second fixing table, the output end of the second motor is connected with a second spindle in a matched mode, the second spindle is connected with a first gear in a matched mode, the first gear is mounted in the middle of the gear mounting table, and when the second motor is driven, the first gear can rotate along with the second spindle;
the displacement assembly is used for driving the polishing head to move up and down.
Further, in a preferred embodiment of the present invention, a plurality of mounting cavities are circumferentially arranged in the polishing head at intervals, a first sensor is correspondingly mounted on each of the mounting cavities, the first sensors are interconnected by signals, and the first sensors are used for detecting temperature information of the polishing head.
Further, in a preferred embodiment of the present invention, the gear mounting table is provided with a plurality of second gears at intervals along a circumferential direction, the plurality of second gears are all in meshed transmission with the first gear, so that the first gear can drive the plurality of second gears to rotate synchronously, the second gear is provided with a fixed shaft, and a workpiece clamp is fixedly connected to the fixed shaft and is used for clamping a workpiece.
Further, in a preferred embodiment of the present invention, a sliding groove is formed in an outer peripheral wall of the gear mounting table, a toothed ring is slidably disposed on the sliding groove, the toothed ring is in meshing transmission with the second gear, a polishing table is disposed above the gear mounting table, and the fixed shaft penetrates through a bottom of the polishing table and extends into the polishing table.
Further, in a preferred embodiment of the present invention, the displacement assembly includes a third motor, an output end of the third motor is connected to a threaded screw rod in a matching manner, the threaded screw rod is connected to a sliding block in a matching manner, and the first fixing stage is fixedly mounted on the sliding block so as to drive the polishing head to move up and down by driving the third motor.
Further, in a preferred embodiment of the present invention, the displacement assembly further includes a fixing plate, guide rails are disposed on two sides of the fixing plate, and a guide groove is disposed on the first fixing table and is embedded in the guide rails.
Further, in a preferred embodiment of the present invention, a plurality of second sensors are disposed at intervals along the length direction of the threaded screw, and signal interconnection is realized among the plurality of second sensors, and the second sensors are used for detecting sliding position information.
Further, in a preferred embodiment of the present invention, a third sensor is disposed on the polishing head, and the third sensor is configured to detect pressure information of the polishing head in the working state.
The second aspect of the present invention provides a method for controlling an indium phosphide single-crystal production system, which is applied to any one of the indium phosphide single-crystal production systems, and which includes the steps of:
acquiring a working temperature value of the polishing head in real time;
comparing the working temperature value with a first preset temperature value and a second preset temperature value;
if the working temperature value is less than or equal to a first preset temperature value, polishing by the polishing head according to a first working parameter;
if the working temperature value is greater than or equal to a second preset temperature value, polishing by the polishing head according to a second working parameter;
and if the working temperature value is greater than the first preset temperature value and less than the second preset temperature value, polishing by the polishing head according to a third working parameter.
Further, in a preferred embodiment of the present invention, the first working parameter is a polishing mode in which the first spindle rotates at a uniform speed after rotating at a uniform speed, and the feeding amount is a first feeding amount; the second working parameter is a polishing mode that the first main shaft rotates at a uniform speed after rotating at a uniform speed, and the feeding amount is a second feeding amount; the third working parameter is a polishing mode that the first main shaft keeps rotating at a constant speed and the feeding amount is the third feeding amount.
The indium phosphide single crystal preparation system and the method adopt a double-shaft rotary polishing mode for polishing, and have the advantages of stable polishing process, high polishing quality and the like; the polishing machine can polish a plurality of workpieces simultaneously, the workpieces can rotate at the same speed through one motor, the transmission process is stable, the transmission efficiency is high, the control is easy, the machining efficiency is ensured, the quality of the machined part is also ensured, the reliability of the machined part is improved, and the economic benefit is improved; the temperature value of the polishing head is measured in real time through the first sensor, the control system intelligently controls the polishing parameters of the polishing head according to the temperature value, the polishing temperature is further controlled within a proper temperature range, the polishing quality is guaranteed, meanwhile, the polishing efficiency is also guaranteed, and the economic benefit is improved; the feeding amount of the polishing head during processing can be measured in real time through the second sensor, and then the feeding amount information is transmitted to the control system, so that the control system can intelligently control the feeding amount, and the device is simple in structure, low in cost and wide in application range.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that drawings of other embodiments can be obtained according to the drawings without creative efforts.
FIG. 1 is a perspective view of a first perspective of the present invention;
FIG. 2 is a perspective view of a second embodiment of the present invention;
FIG. 3 is a perspective view of a third embodiment of the present invention;
FIG. 4 is a schematic view of the internal structure of the gear mounting table;
the reference numerals are explained below: 101. a support frame; 102. a first fixed table; 103. a first motor; 104. a first main shaft; 105. a polishing head; 106. a second stationary stage; 107. a gear mounting table; 108. a second motor; 109. a second main shaft; 201. a first gear; 202. a second gear; 203. a workpiece holder; 204. a toothed ring; 205. a polishing table; 206. a third motor; 207. a threaded lead screw; 208. a slider; 209. a fixing plate; 301. a guide rail; 302. and a guide groove.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, the present invention will be further described in detail with reference to the accompanying drawings and the detailed description, wherein the drawings are simplified schematic drawings and only the basic structure of the present invention is illustrated schematically, so that only the structure related to the present invention is shown, and it is to be noted that the embodiments and features of the embodiments in the present application can be combined with each other without conflict.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be considered limiting of the scope of the present application. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the invention, "a plurality" means two or more unless otherwise specified.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art through specific situations.
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
The invention provides an indium phosphide single crystal preparation system, which comprises a support frame 101, and a polishing assembly and a displacement assembly which are arranged on the support frame 101.
As shown in fig. 1 and 2, the polishing assembly includes a first fixed table 102, a first motor 103 is fixedly mounted on the first fixed table 102, an output end of the first motor 103 is cooperatively connected with a first spindle 104, a polishing head 105 is cooperatively connected to the first spindle 104, and when the first motor 103 is driven to rotate, the polishing head 105 can rotate along with the first spindle 104.
It should be noted that, a first speed reducer is connected to the first motor 103 in a matching manner, the first speed reducer is connected to the first speed reducer in a matching manner, the first speed reducer is connected to the first coupling in a matching manner, the first coupling is connected to the first spindle 104 in a matching manner, and after the first motor 103 is driven, the first motor 103 drives the first coupling to rotate, so that the first spindle 104 rotates, and the polishing head 105 rotates. The first speed reducer has the function of speed reduction, so that the rotary motion transmitted by the first motor 103 is more stable and is easy to control, the processing precision of the polishing head 105 during processing is improved, and the generation of workpiece defects is reduced.
As shown in fig. 1 and 2, the polishing assembly further includes a second fixing table 106 and a gear mounting table 107, a second motor 108 is fixedly mounted on the second fixing table 106, an output end of the second motor 108 is connected with a second spindle 109 in a matching manner, a first gear 201 is connected on the second spindle 109 in a matching manner, the first gear 201 is mounted in the middle of the gear mounting table 107, and when the second motor 108 is driven, the first gear 201 can rotate along with the second spindle 109.
As shown in fig. 4, a plurality of second gears 202 are circumferentially arranged on the gear mounting table 107 at intervals, the plurality of second gears 202 are in meshing transmission with the first gear 201, so that the first gear 201 can drive the plurality of second gears 202 to synchronously rotate, a fixed shaft is arranged on the second gear 202, a workpiece clamp 203 is fixedly connected to the fixed shaft, and the workpiece clamp 203 is used for clamping a workpiece.
A sliding groove is formed in the outer peripheral wall of the gear mounting table 107, a gear ring 204 is arranged on the sliding groove in a sliding manner, the gear ring 204 is in meshing transmission with the second gear 202, a polishing table 205 is arranged above the gear mounting table 107, and the fixed shaft penetrates through the bottom of the polishing table 205 and extends into the polishing table 205; the displacement assembly is used for driving the polishing head 105 to move up and down.
Note that the polishing method is divided into uniaxial rotational polishing and biaxial rotational polishing. The principle of the single-shaft rotary polishing is that a workpiece is fixed, and the polishing head 105 rotates independently, so that the polishing head 105 continuously grinds the workpiece and then removes the workpiece material; the principle of the biaxial rotation polishing is that the polishing head 105 and the workpiece are both rotated, but the rotation speed of the workpiece is not consistent with that of the polishing head 105, so that the relative displacement between the polishing head 105 and the workpiece is changed, and the process of removing materials in the workpiece is carried out. The invention adopts a double-shaft rotary polishing mode for polishing, and the polishing mode has the advantages of stable polishing process, high polishing quality and the like.
It should be noted that, in order to improve the processing efficiency, it is often necessary to process a plurality of workpieces simultaneously in the polishing table 205, and the conventional method is to arrange a plurality of workpiece holders 203 in the polishing table 205 to clamp the plurality of workpiece holders 203, then control the workpiece holders 203 to rotate independently by a plurality of driving motors to rotate the workpieces, and then drive the polishing heads 105 to rotate so that the workpieces and the polishing heads 105 find relative rotation, thereby completing the polishing process, however, although this method ensures the processing efficiency, because the plurality of driving motors control the corresponding workpiece rotation independently, the rotation speed of the plurality of workpieces is difficult to be kept consistent during the rotation process, so that the relative rotation speed of the plurality of workpieces and the polishing heads 105 cannot be kept consistent, and further, the polishing thickness of the workpieces is inconsistent after the workpieces are processed in the same period of time (the rotation speed of the workpieces is faster, the larger the wear thickness of the workpiece is), the inconsistent size of the polished product is caused, if the size deviation is large, the polished product needs to be scrapped, and then the large economic loss is caused.
In order to solve the technical defects, the embodiment of the invention is as follows: the second gears 202 are provided in three numbers, and are provided on the gear mounting table 107 at intervals. When the second motor 108 is driven, the second motor 108 drives the second spindle 109 to rotate, and further the second spindle 109 drives the first gear 201 to rotate, the first gear 201 and the second gear 202 are in meshing transmission, and further the first gear 201 can drive the three second gears 202 to synchronously rotate, and further the three workpiece clamps 203 can synchronously rotate, so that after the second motor 108 is driven, the three workpiece clamps 203 can synchronously rotate, and further workpieces clamped on the workpiece clamps 203 can synchronously rotate, only one motor is needed to control a plurality of workpieces to rotate, the equipment cost is greatly saved, and the transmission mode of gear transmission not only ensures that the rotating speeds of the three workpieces are equal, so that the sizes of products after polishing can be kept consistent, and the transmission process is stable and has high transmission efficiency, the control is easy, the machining efficiency is ensured, meanwhile, the quality of the machined part is also ensured, the reliability of the machined part is improved, and the economic benefit is improved.
In addition, a gear ring 204 is further arranged on the gear mounting table 107, annular teeth are arranged on the inner wall of the gear ring 204, the gear ring 204 is in meshing transmission with the three second gears 202, when the second gears 202 rotate, the gear ring 204 can transmit along with the second gears 202, and the purpose of arranging the gear ring 204 is to improve the stability of the second gear 204 during rotation and further ensure that the rotation speeds of the three second gears 202 can be kept consistent during rotation, so that the teeth on the gear ring 204 are meshed with the teeth on the second gears 202 to play a role of limiting each other, further ensure that the rotation speeds of the three second gears 202 during rotation are consistent, and further ensure the quality of products.
As shown in fig. 3, the displacement assembly includes a third motor 206, an output end of the third motor 206 is connected to a threaded screw 207 in a matching manner, a sliding block 208 is connected to the threaded screw 207 in a matching manner, and the first fixing stage 102 is fixedly mounted on the sliding block 208, so as to drive the third motor 206 to drive the polishing head 105 to move up and down.
It should be noted that the third motor 206 is cooperatively connected to a third speed reducer, the third speed reducer is cooperatively connected to a third coupling, and the third coupling is cooperatively connected to the threaded screw 207. Through driving third motor 206 for first motor 103 drives the rotation of third coupling, and then makes the third coupling drive threaded lead screw 207 and rotate, and then makes sliding block 208 slide on threaded lead screw 207, and then makes polishing head 105 can reciprocate, so, just can control polishing head 105's feed volume through controlling third motor 206, and transmit through the driven mode of threaded lead screw 207, make polishing head 105 higher at the in-process steadiness of feeding, and easily control, the transmission efficiency is high. The third speed reducer has the function of speed reduction, so that the rotary motion transmitted by the third motor 206 is more stable and is easy to control, the processing precision of the polishing head 105 during processing is improved, and the generation of workpiece defects is reduced.
The displacement assembly further comprises a fixing plate 209, guide rails 301 are arranged on two sides of the fixing plate 209, a guide groove 302 is arranged on the first fixing table 102, and the guide groove 302 is embedded in the guide rails 301.
It should be noted that two guide rails 301 are arranged on the fixing plate 209, guide grooves 302 are arranged on two sides of the first fixing table 102, and when the sliding block 208 drives the first fixing table 102 to move up and down, the guide grooves 302 can slide back and forth along the guide rails 301, so as to improve the stability of the polishing head 105 in the feeding process, and avoid the situation that the polishing head 105 is displaced in the processing process, thereby playing a role in supporting and guiding.
Inside along circumference interval setting of rubbing head 105 a plurality of installation cavity, a plurality of correspond on the installation cavity and install first sensor, signal interconnection between the first sensor, first sensor is used for detecting rubbing head 105's temperature information.
It should be noted that during the polishing process, heat is generated by the polishing head 105 and the workpiece during the friction process, and the heat is transferred into the polishing head 105, so that the first sensor can detect the temperature value of the polishing head 105 during operation.
The threaded screw 207 is provided with a plurality of second sensors at intervals along the length direction, the second sensors are interconnected by signals, and the second sensors are used for detecting sliding position information.
It should be noted that the second sensor is a photoelectric sensor, the second sensor is disposed on the threaded screw 207 at intervals, and numbers the second sensor in sequence, and the feeding amount of the polishing head 105 can be accurately detected by the second sensor, and the detection principle is as follows: when the polishing head 105 moves downwards step by step in the feeding process, when one of the second sensors receives a sliding signal, the time when the signal is received is recorded, when the next second sensor receives a signal of the sliding block 208, the time when the signal is received is recorded, the time difference between the two times is calculated, and the distance between the two second sensors is combined, so that the feeding amount of the polishing head 105 during processing can be calculated. Therefore, the feeding amount of the polishing head 105 during processing can be accurately measured in real time through the second sensor, and then the feeding amount information is transmitted to the control system, so that the control system intelligently controls the feeding amount, and the device is simple in structure, low in cost and wide in application range.
A third sensor is arranged on the polishing head 105, and the third sensor is used for detecting pressure information of the polishing head 105 in a working state.
It should be noted that the change in polishing pressure directly affects the force of the polishing head 105 against the workpiece surface, and the polishing pressure is 40 to 240g/cm2When the polishing pressure reaches 240g/cm, the polishing efficiency increases with the increase of the pressure2The polishing efficiency was close to 1 μm/min. The polished surface roughness of the InP single crystal waferAt 40 to 240g/cm2The pressure is reduced and increased along with the increase of the pressure within the pressure range, and the pressure is 120g/cm2The surface roughness of the InP single crystal wafer is minimized, and therefore, in order to ensure the quality of the InP single crystal wafer after processing and the efficiency in processing, the pressure of the polishing head 105 is maintained at 110 to 130g/cm2Preferably.
Since the change in polishing pressure is substantially a change in pressure between the workpiece and the polishing head 105, that is, a change in interaction force between the workpiece and the polishing head 105, the polishing pressure can be controlled by controlling the feed amount of the polishing head 105. The third sensor may be a pressure sensor, and the pressure information of the polishing head 105 is detected in real time by the third sensor; when the pressure value of the polishing head 105 is less than 110g/cm2When the polishing efficiency is low, the third sensor feeds back a signal to the control system, and the control system increases the feed amount of the polishing head 105 after receiving the signal, so that the polishing pressure is increased, and the polishing efficiency is improved; when the pressure value of the polishing head 105 is more than 130g/cm2If the workpiece is polished according to the pressure value all the time, the roughness of the polished workpiece is larger, the third sensor feeds back a signal to the control system, and the control system reduces the feeding amount of the polishing head 105 after receiving the signal, so that the polishing pressure is reduced, and the polishing quality is improved; therefore, the feeding amount of the polishing head 105 is intelligently controlled by the control system through the pressure signal fed back by the third sensor, so that the polishing pressure is kept in a proper range, and the quality of the indium phosphide single-crystal wafer after processing and the processing efficiency are further ensured.
The second aspect of the present invention provides a method for controlling an indium phosphide single-crystal production system, which is applied to any one of the indium phosphide single-crystal production systems, and which includes the steps of:
acquiring a working temperature value of the polishing head in real time;
comparing the working temperature value with a first preset temperature value and a second preset temperature value;
if the working temperature value is less than or equal to a first preset temperature value, polishing by the polishing head according to a first working parameter;
if the working temperature value is greater than or equal to a second preset temperature value, polishing by the polishing head according to a second working parameter;
and if the working temperature value is greater than the first preset temperature value and less than the second preset temperature value, polishing by the polishing head according to a third working parameter.
The first working parameter is a polishing mode that the first main shaft rotates at a uniform speed after rotating at a uniform speed, and the feeding amount is the first feeding amount; the second working parameter is a polishing mode that the first main shaft rotates at a uniform speed after rotating at a uniform speed, and the feeding amount is a second feeding amount; the third working parameter is a polishing mode that the first main shaft keeps rotating at a constant speed and the feeding amount is the third feeding amount.
It should be noted that, during polishing, the temperature during polishing has an important influence on the workpiece and the polishing head 105. If the polishing temperature is too high, the structure of the indium phosphide material can be damaged, so that the physical and chemical properties of the indium phosphide material are lost, the original material characteristics of the indium phosphide material are lost, and the subsequent use is influenced; if the polishing temperature is too high, the performance of the polishing head 105 is affected, and the service life of the polishing head 105 is further shortened; if the polishing temperature is too low, this indicates that the mutual pressing force between the workpiece and the polishing head 105 is too small, which indicates that the grinding amount between the workpiece and the polishing head 105 is small, and this indicates that the polishing efficiency is low. The polishing temperature is correlated with the feed amount and the rotation speed of the polishing head 105, the polishing temperature is higher when the rotation speed is higher, and the polishing temperature is higher when the feed amount is higher; therefore, in the present invention, in order to be able to secure polishing efficiency and workpiece quality, it is necessary to control the polishing temperature within a suitable range. The specific implementation is as follows: the temperature value of the polishing head 105 is obtained in real time through the first sensor, and is divided into three polishing parameters according to the real-time temperature condition. If the temperature value of the polishing head 105 is less than or equal to the first preset temperature value, at this time, it indicates that the mutual extrusion force between the workpiece and the polishing head 105 is too small, it indicates that the grinding amount between the workpiece and the polishing head 105 is small at this time, and it indicates that the polishing efficiency is low at this time, so that the rotation speed of the polishing head 105 needs to be increased, and the polishing head 105 is polished with a larger feed amount, thereby improving the polishing efficiency; if the temperature value of the polishing head 105 is greater than or equal to the second preset temperature value, at this time, it indicates that the mutual extrusion force between the workpiece and the polishing head 105 is too large, and it indicates that the grinding amount between the workpiece and the polishing head 105 is large at this time, and further, the polishing temperature is too high, so that the rotation speed of the polishing head 105 needs to be reduced, the polishing head 105 is polished with a small feed amount, and further, the polishing temperature is reduced, and further, the polishing quality of the workpiece is improved; if the temperature value of the polishing head 105 is greater than the first preset temperature value and less than the second preset temperature value, the mutual pressing force between the workpiece and the polishing head 105 is moderate, and the grinding amount of the workpiece and the polishing head 105 is moderate, so that the polishing head 105 needs to maintain the current rotating speed and the current feeding amount. Therefore, the temperature value of the polishing head 105 is measured by the first sensor in real time, the control system intelligently controls the polishing parameters of the polishing head 105 according to the temperature value, the polishing temperature is controlled within a proper temperature range, the polishing quality is guaranteed, the polishing efficiency is guaranteed, and the economic benefit is improved.
While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. The utility model provides an indium phosphide single crystal preparation system, includes the support frame and installs polishing subassembly and the displacement subassembly on the support frame which characterized in that:
the polishing assembly comprises a first fixing table, a first motor is fixedly mounted on the first fixing table, the output end of the first motor is connected with a first main shaft in a matching mode, a polishing head is connected to the first main shaft in a matching mode, and when the first motor is driven to rotate, the polishing head can rotate along with the first main shaft;
the polishing assembly further comprises a second fixing table and a gear mounting table, a second motor is fixedly mounted on the second fixing table, the output end of the second motor is connected with a second spindle in a matched mode, the second spindle is connected with a first gear in a matched mode, the first gear is mounted in the middle of the gear mounting table, and when the second motor is driven, the first gear can rotate along with the second spindle;
the displacement assembly is used for driving the polishing head to move up and down.
2. The system for producing an indium phosphide single crystal according to claim 1, wherein: the polishing head is internally provided with a plurality of mounting cavities at intervals along the circumferential direction, the mounting cavities are correspondingly provided with first sensors, the first sensors are connected with each other through signals, and the first sensors are used for detecting temperature information of the polishing head.
3. The system for producing an indium phosphide single crystal as set forth in claim 1, wherein: the gear mounting table is provided with a plurality of second gears at intervals along the circumferential direction, the second gears are in meshing transmission with the first gears, so that the first gears can drive the second gears to synchronously rotate, the second gears are provided with fixed shafts, the fixed shafts are fixedly connected with workpiece clamps, and the workpiece clamps are used for clamping workpieces.
4. An indium phosphide single-crystal production system as set forth in claim 3, wherein: the sliding groove has been seted up on the periphery wall of gear mounting table, the slip is provided with the ring gear on the sliding groove, the ring gear with second gear meshing transmission, the top of gear mounting table is provided with the polishing platform, the fixed axle runs through the bottom of polishing platform extends to in the polishing platform.
5. The system for producing an indium phosphide single crystal as set forth in claim 1, wherein: the displacement assembly comprises a third motor, the output end of the third motor is connected with a threaded screw rod in a matching mode, a sliding block is connected onto the threaded screw rod in a matching mode, and the first fixing table is fixedly installed on the sliding block to drive the third motor to drive the polishing head to move up and down.
6. An indium phosphide single-crystal production system as set forth in claim 5, wherein: the displacement assembly further comprises a fixing plate, guide rails are arranged on two sides of the fixing plate, a guide groove is formed in the first fixing table, and the guide groove is embedded into the guide rails.
7. An indium phosphide single-crystal production system as set forth in claim 5, wherein: the threaded screw rod is provided with a plurality of second sensors at intervals along the length direction, the second sensors are in signal interconnection, and the second sensors are used for detecting sliding position information.
8. The system for producing an indium phosphide single crystal as set forth in claim 1, wherein: and a third sensor is arranged on the polishing head and used for detecting pressure information of the polishing head in a working state.
9. A control method of an indium phosphide single-crystal production system as applied to the indium phosphide single-crystal production system as set forth in any one of claims 1 to 8, characterized by comprising the steps of:
acquiring a working temperature value of the polishing head in real time;
comparing the working temperature value with a first preset temperature value and a second preset temperature value;
if the working temperature value is less than or equal to a first preset temperature value, polishing by the polishing head according to a first working parameter;
if the working temperature value is greater than or equal to a second preset temperature value, polishing by the polishing head according to a second working parameter;
and if the working temperature value is greater than the first preset temperature value and less than the second preset temperature value, polishing by the polishing head according to a third working parameter.
10. The method for controlling an indium phosphide single-crystal production system as set forth in claim 9, wherein: the first working parameter is a polishing mode that the first main shaft rotates at a constant speed after rotating at a constant speed, and the feeding amount is the first feeding amount; the second working parameter is a polishing mode that the first main shaft rotates at a uniform speed after rotating at a uniform speed, and the feeding amount is a second feeding amount; the third working parameter is a polishing mode that the first main shaft keeps rotating at a constant speed and the feeding amount is the third feeding amount.
CN202210094548.1A 2022-01-26 2022-01-26 Indium phosphide single crystal preparation system and method Pending CN114523407A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116922243A (en) * 2023-09-19 2023-10-24 苏州中砥半导体材料有限公司 Preparation system and preparation method based on indium phosphide monocrystal

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101049677A (en) * 2007-05-09 2007-10-10 浙江工业大学 Control system of accurate doublefaced polisher
CN101972970A (en) * 2010-08-30 2011-02-16 兰州瑞德实业集团有限公司 Precision control system for double-sided polishing machine
CN102221416A (en) * 2011-03-10 2011-10-19 清华大学 Polishing solution physical parameter measuring apparatus, measuring method and chemically mechanical polishing equipment
CN112975592A (en) * 2021-03-29 2021-06-18 中国电子科技集团公司第十三研究所 Polishing process of indium phosphide substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101049677A (en) * 2007-05-09 2007-10-10 浙江工业大学 Control system of accurate doublefaced polisher
CN101972970A (en) * 2010-08-30 2011-02-16 兰州瑞德实业集团有限公司 Precision control system for double-sided polishing machine
CN102221416A (en) * 2011-03-10 2011-10-19 清华大学 Polishing solution physical parameter measuring apparatus, measuring method and chemically mechanical polishing equipment
CN112975592A (en) * 2021-03-29 2021-06-18 中国电子科技集团公司第十三研究所 Polishing process of indium phosphide substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
孙世孔等: "磷化铟的化学机械抛光技术研究进展", 《半导体技术》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116922243A (en) * 2023-09-19 2023-10-24 苏州中砥半导体材料有限公司 Preparation system and preparation method based on indium phosphide monocrystal
CN116922243B (en) * 2023-09-19 2023-11-28 苏州中砥半导体材料有限公司 Preparation system and preparation method based on indium phosphide monocrystal

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