CN114520269A - Wavelength-adjustable wide-spectrum photoelectric device - Google Patents
Wavelength-adjustable wide-spectrum photoelectric device Download PDFInfo
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- 238000001228 spectrum Methods 0.000 title claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 230000005693 optoelectronics Effects 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 12
- 229910006578 β-FeSi2 Inorganic materials 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 abstract description 9
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 229910006585 β-FeSi Inorganic materials 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000010365 information processing Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000002547 anomalous effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- JRACIMOSEUMYIP-UHFFFAOYSA-N bis($l^{2}-silanylidene)iron Chemical compound [Si]=[Fe]=[Si] JRACIMOSEUMYIP-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
本发明公开了一种波长可调的宽光谱光电器件,主要包括:由(1)~(5)构成的基本结构。(1)是硅层,位于结构上部,是光线的入射面;(2)是β‑FeSi2层,位于结构中部;(3)是硅层,位于结构下部,是光线的出射面;(4)是上表面金属电极,与硅层形成欧姆接触;(5)是下表面金属电极,与硅层形成欧姆接触;(4)的面积占(1)面积的一小部分,保证足够的光线入射;(5)的面积占(3)面积的一部分,允许部分光线射出,或者占全部,可以把透射而来的光线反射回结构内部;(1)、(2)、(3)材料的厚度均小于其趋肤深度;基本结构可以单独构成简单的器件,也可以互相组合构成复杂的器件;通过各层厚度的变化,可以选择传输的光线波长。本发明利用材料的复折射率和厚度的变化,能实现对传输光线波长的选择,制备宽光谱的光学器件或光电器件,而且结构简单、使用方便,易于制备,成本低,环保。
The invention discloses a wide-spectrum optoelectronic device with adjustable wavelength, which mainly comprises: a basic structure composed of (1) to (5). (1) is the silicon layer, located in the upper part of the structure, and is the incident surface of light; (2) is the β-FeSi 2 layer, located in the middle of the structure; (3) is the silicon layer, located in the lower part of the structure, is the exit surface of light; (4) ) is the metal electrode on the upper surface, which forms ohmic contact with the silicon layer; (5) is the metal electrode on the lower surface, which forms ohmic contact with the silicon layer; the area of (4) occupies a small part of the area of (1), ensuring enough light incident ; The area of (5) accounts for a part of the area of (3), allowing part of the light to be emitted, or occupying the whole, which can reflect the transmitted light back to the interior of the structure; (1), (2), (3) The thickness of the material is uniform. It is less than its skin depth; the basic structure can form a simple device alone, or it can be combined with each other to form a complex device; through the change of the thickness of each layer, the transmitted light wavelength can be selected. The invention utilizes the change of the complex refractive index and thickness of the material, can realize the selection of the wavelength of the transmitted light, and prepare a wide-spectrum optical device or optoelectronic device, and has the advantages of simple structure, convenient use, easy preparation, low cost and environmental protection.
Description
技术领域technical field
本发明涉及一种波长可调的宽光谱光电器件。The invention relates to a wide-spectrum optoelectronic device with adjustable wavelength.
背景技术Background technique
宽光谱光电器件是现代信息社会必不可少的元件之一。它能适应现代社会中对信息探测和处理的要求,能适应环境保护的要求。结构简单、易于制造、体积小,使用方便是宽光谱光电器件应该具备的特性之一。本器件结构简单、制造工艺兼容现代集成电路工艺、不污染环境,易于大规模生产和使用,能完成现代信息社会对信息处理的要求。Broad-spectrum optoelectronic devices are one of the essential components of the modern information society. It can meet the requirements of information detection and processing in modern society, and can meet the requirements of environmental protection. Simple structure, easy fabrication, small size, and convenient use are one of the characteristics that a wide-spectrum optoelectronic device should possess. The device has a simple structure, a manufacturing process compatible with modern integrated circuit technology, does not pollute the environment, is easy to produce and use on a large scale, and can meet the information processing requirements of the modern information society.
硅(Si)是现代硅基集成电路技术中必需的材料,其光学吸收系数高,仅需1μm厚度就可以吸收几乎全部太阳光;室温时的禁带宽度是1.12eV。二硅化铁(β-FeSi2)是环境友好型半导体材料,其光学吸收系数更高,吸收太阳光的最佳厚度范围是0.2μm-0.3μm,室温时的禁带宽度是通常认为是0.86eV,其制备工艺与现代硅基集成电路工艺兼容。Silicon (Si) is an essential material in modern silicon-based integrated circuit technology. It has a high optical absorption coefficient and can absorb almost all sunlight with a thickness of only 1 μm; the forbidden band width at room temperature is 1.12 eV. Iron disilicide (β-FeSi2) is an environmentally friendly semiconductor material with a higher optical absorption coefficient, the optimal thickness range for absorbing sunlight is 0.2μm-0.3μm, and the forbidden band width at room temperature is generally considered to be 0.86eV, Its fabrication process is compatible with modern silicon-based integrated circuit processes.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提供一种宽光谱光电器件,从而能够完成信息处理的要求,结构简单,使用现有的集成电路工艺可以完成制造,成本低,体积小,在生产、使用和废弃环节不会对环境产生污染,易于大规模推广使用。The purpose of the present invention is to provide a wide-spectrum optoelectronic device, which can meet the requirements of information processing, has a simple structure, can be manufactured by using the existing integrated circuit technology, has low cost and small volume, and will not be used in production, use and disposal. It pollutes the environment and is easy to popularize and use on a large scale.
为实现上述目的,本发明提供如下技术方案:To achieve the above object, the present invention provides the following technical solutions:
一种波长可调的宽光谱光电器件,主要包括:由(1)~(5)构成的基本结构。(1)是硅层,位于结构上部,是光线的入射面;(2)是β-FeSi2层,位于结构中部;(3)是硅层,位于结构下部,是光线的出射面;(4)是上表面金属电极,与硅层形成欧姆接触;(5)是下表面金属电极,与硅层形成欧姆接触;(4)的面积占(1)面积的一小部分,保证足够的光线入射;(5)的面积占(3)面积的一部分,允许部分光线射出,或者占全部,可以把透射而来的光线反射回结构内部;(1)、(2)、(3)材料的厚度均小于其趋肤深度。A wavelength-tunable wide-spectrum optoelectronic device mainly includes: a basic structure composed of (1) to (5). (1) is the silicon layer, which is located in the upper part of the structure and is the incident surface of the light; (2) is the β-FeSi2 layer, which is located in the middle of the structure; (3) is the silicon layer, which is located in the lower part of the structure and is the exit surface of the light; (4) It is the metal electrode on the upper surface, which forms ohmic contact with the silicon layer; (5) is the metal electrode on the lower surface, which forms ohmic contact with the silicon layer; the area of (4) occupies a small part of the area of (1) to ensure sufficient light incidence; The area of (5) occupies a part of the area of (3), allowing part of the light to be emitted, or occupying the whole, which can reflect the transmitted light back to the interior of the structure; (1), (2), (3) The thickness of the material is less than its skin depth.
作为本发明的优选方案:基本结构可以单独构成简单的器件,也可以互相组合构成复杂的器件;通过各层厚度的变化,调整传输光线的波长。As a preferred solution of the present invention: the basic structure can form a simple device alone, or can be combined to form a complex device; the wavelength of the transmitted light can be adjusted by changing the thickness of each layer.
与现有技术相比,本发明的有益效果是:本发明能通过各层厚度的变化实现对不同波长光线的传输特性的影响,也就是影响其反射率、透射率,进而影响吸收率,可以形成光电器件或光学器件,而且成本低、易于制备,性能稳定、使用方便,具有新颖性、创造性和实用性。Compared with the prior art, the beneficial effects of the present invention are: the present invention can realize the influence on the transmission characteristics of light of different wavelengths through the change of the thickness of each layer, that is, the reflectivity and transmittance thereof, and then the absorption rate, can be The optoelectronic device or the optical device is formed, and has the advantages of low cost, easy preparation, stable performance, convenient use, novelty, creativity and practicability.
附图说明Description of drawings
图1为基本结构图(由(1)~(5)构成)。FIG. 1 is a basic configuration diagram (composed of (1) to (5)).
图2为本发明实施的案例1示意图。FIG. 2 is a schematic diagram of
图3为本发明实施的案例2示意图。FIG. 3 is a schematic diagram of
具体实施方式Detailed ways
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明的保护范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
本发明实施的案例1,请参阅图2,此图可以视为由三种基本结构图组合构成;它们有共同的β-FeSi2层(2)和硅层(3),其上部的硅层(7)(10)(12)分别具有不同的厚度,呈阶梯状;金属电极(8)(9)(11)分别设置在相应的硅层上表面;金属电极(6)设置在硅层(3)的下表面,完整包覆下底面。金属电极(8)(9)(11)分别与金属电极(6)组合输出光电流或光电信号。For
本发明实施的案例2,请参阅图3,此图可以视为由三种基本结构图组合构成;它们有共同的β-FeSi2层(2)和硅层(3),其上部的硅层(7)(10)(12)分别具有不同的厚度,呈阶梯状;金属电极(8)(9)(11)分别设置在相应的硅层上表面;金属电极(13)(14)(15)设置在硅层(3)的下表面,分别与上部硅层相对应,部分包覆下底面,电极之间留有空隙。光线由上部的硅层(7)(10)(12)入射,通过β-FeSi2层(2)和硅层(3),透射到结构的外部,此种情形是光学器件;金属电极(8)(9)(11)与金属电极(6)组合输出光电流或光电信号,此种情形是光电器件。For
光线入射角度范围为0°~90°;上部各硅层的厚度可以连续变化,如正弦或余弦形状的起伏变化,也可以不连续变化,如阶梯形状的变化。The incident angle of light ranges from 0° to 90°; the thickness of each upper silicon layer can be continuously changed, such as sine or cosine shape fluctuation, or discontinuous, such as step shape change.
透射光线的测量装置可以设置在(13)(14)之间的空隙中,也可以设置在(14)(15)之间的空隙中或者在底部的其它位置;测量装置所处的位置不同,其获得的光线参数也不相同。The measuring device for the transmitted light can be arranged in the space between (13) and (14), in the space between (14) and (15), or at other positions at the bottom; the position of the measuring device is different, The obtained light parameters are also different.
金属电极(8)(9)(11)与金属电极(6)组合方式可以是(11)与(13),(9)与(14),(8)与(15),或者是(11)与(14),(11)与(15),(10)与(13),(10)与(15),(8)与(13),(8)与(14)等方式。The combination of metal electrodes (8), (9) (11) and metal electrodes (6) can be (11) and (13), (9) and (14), (8) and (15), or (11) And (14), (11) and (15), (10) and (13), (10) and (15), (8) and (13), (8) and (14) and so on.
本发明的工作原理是:光子的路径不同,经过的材料不同,均会影响其光学传输特性和光电性质;不同频率的光子,其光学传输特性和光电性质不同;材料的光学色散特性不同,对光子的传输特性和光电性质的影响也不相同。半导体材料β-FeSi2和Si在宽光谱范围内具有的光学复折射率,特别是反常色散,影响了其构成光电器件的独特性能,在现代信息的处理中具有独特的应用。The working principle of the invention is as follows: different paths of photons and different materials will affect their optical transmission characteristics and optoelectronic properties; photons of different frequencies have different optical transmission properties and optoelectronic properties; The transport properties of photons and the effects of optoelectronic properties are also different. The optical complex refractive index, especially the anomalous dispersion, of the semiconductor materials β-FeSi2 and Si in a wide spectral range affects the unique properties of their constituent optoelectronic devices and has unique applications in the processing of modern information.
本发明所涉及的结构中均要求各层材料的厚度在其趋肤深度范围内变化,选取合适的厚度,可以保证在宽光谱范围内光线的透射或光线的吸收,以制作光学器件或光电器件;通过各层材料厚度的变化,可以完成不同波长光线的选择性传输;通过对透射光线或光电流的有序采集,可以完成信息的处理和利用。In the structure involved in the present invention, the thickness of each layer of material is required to vary within the range of its skin depth, and selecting an appropriate thickness can ensure the transmission of light or the absorption of light in a wide spectral range, so as to make optical devices or optoelectronic devices. ; Selective transmission of light of different wavelengths can be accomplished by changing the thickness of each layer of material; information processing and utilization can be accomplished by orderly collection of transmitted light or photocurrent.
对于本领域技术人员而言,显然本发明不限于上述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。因此,无论从哪一点来看,均应将实施例看作是示范性的,而且是非限制性的,本发明的范围由所附权利要求而不是上述说明限定,因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。It will be apparent to those skilled in the art that the present invention is not limited to the details of the above-described exemplary embodiments, but that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments are to be regarded in all respects as illustrative and not restrictive, and the scope of the invention is defined by the appended claims rather than the foregoing description, which are therefore intended to fall within the scope of the appended claims. All changes within the meaning and range of the equivalents of , are included in the present invention. Any reference signs in the claims shall not be construed as limiting the involved claim.
此外,应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施例中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。In addition, it should be understood that although this specification is described in terms of embodiments, not each embodiment only includes an independent technical solution, and this description in the specification is only for the sake of clarity, and those skilled in the art should take the specification as a whole , the technical solutions in each embodiment can also be appropriately combined to form other implementations that can be understood by those skilled in the art.
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006019648A (en) * | 2004-07-05 | 2006-01-19 | Takashi Suemasu | Iron-silicide light emitting element and its manufacturing method |
CN101740645A (en) * | 2009-12-25 | 2010-06-16 | 华南理工大学 | Beta-FeSi2 thin film solar cell |
GB201016399D0 (en) * | 2010-09-30 | 2010-11-10 | Univ Bolton | Photovoltaic cells |
CN103606584A (en) * | 2011-11-02 | 2014-02-26 | 常州合特光电有限公司 | A heterojunction solar cell composed of amorphous silicon/crystalline silicon/β-FeSi2 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006019648A (en) * | 2004-07-05 | 2006-01-19 | Takashi Suemasu | Iron-silicide light emitting element and its manufacturing method |
CN101740645A (en) * | 2009-12-25 | 2010-06-16 | 华南理工大学 | Beta-FeSi2 thin film solar cell |
GB201016399D0 (en) * | 2010-09-30 | 2010-11-10 | Univ Bolton | Photovoltaic cells |
CN103606584A (en) * | 2011-11-02 | 2014-02-26 | 常州合特光电有限公司 | A heterojunction solar cell composed of amorphous silicon/crystalline silicon/β-FeSi2 |
Non-Patent Citations (1)
Title |
---|
熊锡成: "基于β-FeSi2薄膜的太阳能电池研究" * |
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