CN114520269A - Wavelength-adjustable wide-spectrum photoelectric device - Google Patents
Wavelength-adjustable wide-spectrum photoelectric device Download PDFInfo
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- CN114520269A CN114520269A CN202210143878.5A CN202210143878A CN114520269A CN 114520269 A CN114520269 A CN 114520269A CN 202210143878 A CN202210143878 A CN 202210143878A CN 114520269 A CN114520269 A CN 114520269A
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- 238000001228 spectrum Methods 0.000 title claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 13
- 229910006578 β-FeSi2 Inorganic materials 0.000 claims abstract 2
- 230000005693 optoelectronics Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 abstract description 10
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 3
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 229910006585 β-FeSi Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- JRACIMOSEUMYIP-UHFFFAOYSA-N bis($l^{2}-silanylidene)iron Chemical compound [Si]=[Fe]=[Si] JRACIMOSEUMYIP-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000002547 anomalous effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a wavelength-adjustable wide-spectrum photoelectric device, which mainly comprises: the basic structure is composed of (1) to (5). (1) The silicon layer is positioned on the upper part of the structure and is an incident plane of light; (2) is beta-FeSi2A layer located in the middle of the structure; (3) the silicon layer is positioned at the lower part of the structure and is an emergent surface of light; (4) the upper surface metal electrode is in ohmic contact with the silicon layer; (5) the lower surface metal electrode is in ohmic contact with the silicon layer; (4) the area of (1) is a small part of the area of (1), so that enough light rays are ensured to be incident; (5) the area of (3) is a part of the area, which allows part of the light to be emitted, or the area of (3) is the whole area, and the transmitted light can be reflected back to the inside of the structure; (1) the thicknesses of the materials (2) and (3) are smaller than the skin depth; the basic structure can be singly combined to form a simple device, and can also be mutually combined to form a complex device; the wavelength of light transmitted can be selected by varying the thickness of the layers. The invention utilizes the complex refractive index of the materialAnd the change of the thickness can realize the selection of the wavelength of the transmission light and prepare an optical device or a photoelectric device with wide spectrum, and the device has the advantages of simple structure, convenient use, easy preparation, low cost and environmental protection.
Description
Technical Field
The invention relates to a wavelength-tunable broad-spectrum photoelectric device.
Background
The wide-spectrum photoelectric device is one of indispensable elements in the modern information society. It can meet the requirements of information detection and processing in modern society and environmental protection. The structure is simple, the manufacture is easy, the volume is small, and the use is convenient, and the wide-spectrum photoelectric device has one of the characteristics. The device has simple structure, compatible manufacture process with modern integrated circuit process, no environmental pollution, easy mass production and use, and can meet the requirement of modern information society on information processing.
Silicon (Si) is a necessary material in modern silicon-based integrated circuit technology, has high optical absorption coefficient, and can absorb almost all sunlight only by 1 mu m thickness; the forbidden band width at room temperature is 1.12 eV. The iron disilicide (beta-FeSi 2) is an environment-friendly semiconductor material, the optical absorption coefficient of the iron disilicide is higher, the optimal thickness range for absorbing sunlight is 0.2-0.3 mu m, the forbidden bandwidth at room temperature is generally regarded as 0.86eV, and the preparation process of the iron disilicide is compatible with the modern silicon-based integrated circuit process.
Disclosure of Invention
The invention aims to provide a wide-spectrum photoelectric device, which can meet the requirement of information processing, has a simple structure, can be manufactured by using the existing integrated circuit process, has low cost and small volume, does not pollute the environment in the production, use and abandonment links, and is easy to popularize and use on a large scale.
In order to achieve the purpose, the invention provides the following technical scheme:
a wavelength tunable broad spectrum optoelectronic device consisting essentially of: the basic structure is composed of (1) to (5). (1) The silicon layer is positioned on the upper part of the structure and is an incident plane of light; (2) is a beta-FeSi 2 layer, is positioned in the middle of the structure; (3) the silicon layer is positioned at the lower part of the structure and is an emergent surface of light; (4) the upper surface metal electrode is in ohmic contact with the silicon layer; (5) the lower surface metal electrode is in ohmic contact with the silicon layer; (4) the area of (1) is a small part of the area of (1), so that enough light rays are ensured to be incident; (5) the area of (3) is a part of the area, which allows part of the light to be emitted, or the area of (3) is the whole area, and the transmitted light can be reflected back to the inside of the structure; (1) the thicknesses of the materials (2) and (3) are smaller than the skin depth.
As a preferred embodiment of the present invention: the basic structure can be singly combined to form a simple device, and can also be mutually combined to form a complex device; the wavelength of the transmitted light is adjusted through the thickness change of each layer.
Compared with the prior art, the invention has the beneficial effects that: the invention can realize the influence on the transmission characteristics of light rays with different wavelengths through the thickness change of each layer, namely, the reflectivity and the transmissivity of the light rays are influenced, further the absorptivity is influenced, a photoelectric device or an optical device can be formed, and the invention has the advantages of low cost, easy preparation, stable performance, convenient use, novelty, creativity and practicability.
Drawings
Fig. 1 is a basic structural diagram (composed of (1) to (5)).
FIG. 2 is a schematic diagram of case 1 in accordance with the present invention.
Fig. 3 is a schematic diagram of case 2 in accordance with the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, belong to the scope of the present invention.
In case 1 of the present invention, please refer to fig. 2, which can be regarded as a combination of three basic structural diagrams; they have a common beta-FeSi 2 layer (2) and a silicon layer (3), and the upper silicon layers (7), (10) and (12) have different thicknesses and are in a step shape; the metal electrodes (8), (9) and (11) are respectively arranged on the upper surfaces of the corresponding silicon layers; the metal electrode (6) is arranged on the lower surface of the silicon layer (3) and completely covers the lower bottom surface. The metal electrodes (8), (9) and (11) are respectively combined with the metal electrode (6) to output photocurrent or photoelectric signals.
In case 2 of the present invention, please refer to fig. 3, which can be regarded as a combination of three basic structural diagrams; they have a common beta-FeSi 2 layer (2) and a silicon layer (3), and the upper silicon layers (7), (10) and (12) have different thicknesses and are in a step shape; the metal electrodes (8), (9) and (11) are respectively arranged on the upper surfaces of the corresponding silicon layers; the metal electrodes (13), (14) and (15) are arranged on the lower surface of the silicon layer (3), respectively correspond to the upper silicon layer, partially cover the lower bottom surface, and a gap is reserved between the electrodes. Light is incident from the upper silicon layers (7) (10) (12), passes through the beta-FeSi 2 layer (2) and the silicon layer (3), and is transmitted to the outside of the structure, in this case an optical device; the metal electrodes (8), (9) and (11) in combination with the metal electrode (6) output a photocurrent or a photoelectric signal, in this case a photoelectric device.
The incident angle range of the light is 0-90 degrees; the thickness of the upper silicon layers may vary continuously, such as in sine or cosine shaped undulations, or may vary discontinuously, such as in a staircase shape.
The measuring device for the transmitted light can be arranged in the gap between (13) and (14), also can be arranged in the gap between (14) and (15) or at other positions of the bottom; the light parameters obtained by the measuring device are different according to different positions of the measuring device.
The combination of the metal electrodes (8), (9), (11) and (6) can be (11) and (13), (9) and (14), (8) and (15), or (11) and (14), (11) and (15), (10) and (13), (10) and (15), (8) and (13), (8) and (14), etc.
The working principle of the invention is as follows: the optical transmission characteristics and the photoelectric properties of photons are affected by different paths of the photons and different passing materials; photons of different frequencies differ in their optical transmission characteristics and optoelectronic properties; the optical dispersion characteristics of the materials are different, and the influence on the transmission characteristics and the photoelectric properties of photons is different. The optical complex refractive index of semiconductor materials beta-FeSi 2 and Si in a wide spectral range, especially anomalous dispersion, affects the unique performance of the photoelectric devices formed by the materials and has unique application in the processing of modern information.
The thickness of each layer of material is required to be changed within the skin depth range in the structure related by the invention, and the proper thickness is selected, so that the transmission of light or the absorption of light within a wide spectral range can be ensured, and an optical device or a photoelectric device can be manufactured; the selective transmission of light rays with different wavelengths can be completed through the change of the thickness of materials of each layer; by orderly collecting the transmitted light or the photocurrent, the processing and utilization of the information can be completed.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (2)
1. A wavelength tunable broad spectrum optoelectronic device consisting essentially of: the basic structure is composed of (1) to (5). (1) The silicon layer is positioned on the upper part of the structure and is an incident plane of light; (2) is beta-FeSi2A layer located in the middle of the structure; (3) the silicon layer is positioned at the lower part of the structure and is an emergent surface of light; (4) the upper surface metal electrode is in ohmic contact with the silicon layer; (5) the lower surface metal electrode is in ohmic contact with the silicon layer; (4) the area of (1) is a small part of the area of (1), so that enough light rays are ensured to be incident; (5) the area of (3) is a part of the area, which allows part of the light to be emitted, or the area of (3) is the whole area, and the transmitted light can be reflected back to the inside of the structure; (1) the thicknesses of the materials (2) and (3) are smaller than the skin depth; the basic structures can be used alone or combined with each other to form a new structure to form a wide-spectrum photoelectric device with adjustable wavelength.
2. A wavelength tunable broad spectrum optoelectronic device according to claim 1, wherein: the selection and adjustment of the wavelength of the transmitted light is completed through the thickness change of materials of all layers, and transmitted light, photocurrent or photoelectric signals are obtained; the thickness of each layer of material is smaller than the skin depth; basic structures alone or in combination with each other; the light is irradiated and incident from the upper surface, and the incident angle of the light can be adjusted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210143878.5A CN114520269A (en) | 2022-02-17 | 2022-02-17 | Wavelength-adjustable wide-spectrum photoelectric device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210143878.5A CN114520269A (en) | 2022-02-17 | 2022-02-17 | Wavelength-adjustable wide-spectrum photoelectric device |
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| CN114520269A true CN114520269A (en) | 2022-05-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210143878.5A Pending CN114520269A (en) | 2022-02-17 | 2022-02-17 | Wavelength-adjustable wide-spectrum photoelectric device |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006019648A (en) * | 2004-07-05 | 2006-01-19 | Takashi Suemasu | Iron-silicide light emitting element and its manufacturing method |
| CN101740645A (en) * | 2009-12-25 | 2010-06-16 | 华南理工大学 | Beta-FeSi2 thin film solar cell |
| GB201016399D0 (en) * | 2010-09-30 | 2010-11-10 | Univ Bolton | Photovoltaic cells |
| CN103606584A (en) * | 2011-11-02 | 2014-02-26 | 常州合特光电有限公司 | Heterojunction solar battery composed of amorphous silicon/crystalline silicon/beta-FeSi2 |
-
2022
- 2022-02-17 CN CN202210143878.5A patent/CN114520269A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006019648A (en) * | 2004-07-05 | 2006-01-19 | Takashi Suemasu | Iron-silicide light emitting element and its manufacturing method |
| CN101740645A (en) * | 2009-12-25 | 2010-06-16 | 华南理工大学 | Beta-FeSi2 thin film solar cell |
| GB201016399D0 (en) * | 2010-09-30 | 2010-11-10 | Univ Bolton | Photovoltaic cells |
| CN103606584A (en) * | 2011-11-02 | 2014-02-26 | 常州合特光电有限公司 | Heterojunction solar battery composed of amorphous silicon/crystalline silicon/beta-FeSi2 |
Non-Patent Citations (1)
| Title |
|---|
| 熊锡成: "基于β-FeSi2薄膜的太阳能电池研究" * |
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