CN114520269A - Wavelength-adjustable wide-spectrum photoelectric device - Google Patents

Abstract

The invention discloses a wide-spectrum optoelectronic device with adjustable wavelength, which mainly comprises: a basic structure composed of (1) to (5). (1) is the silicon layer, located in the upper part of the structure, and is the incident surface of light; (2) is the β-FeSi ₂ layer, located in the middle of the structure; (3) is the silicon layer, located in the lower part of the structure, is the exit surface of light; (4) ) is the metal electrode on the upper surface, which forms ohmic contact with the silicon layer; (5) is the metal electrode on the lower surface, which forms ohmic contact with the silicon layer; the area of (4) occupies a small part of the area of (1), ensuring enough light incident ; The area of (5) accounts for a part of the area of (3), allowing part of the light to be emitted, or occupying the whole, which can reflect the transmitted light back to the interior of the structure; (1), (2), (3) The thickness of the material is uniform. It is less than its skin depth; the basic structure can form a simple device alone, or it can be combined with each other to form a complex device; through the change of the thickness of each layer, the transmitted light wavelength can be selected. The invention utilizes the change of the complex refractive index and thickness of the material, can realize the selection of the wavelength of the transmitted light, and prepare a wide-spectrum optical device or optoelectronic device, and has the advantages of simple structure, convenient use, easy preparation, low cost and environmental protection.

Description

A wavelength-tunable wide-spectrum optoelectronic device

technical field

The invention relates to a wide-spectrum optoelectronic device with adjustable wavelength.

Background technique

Broad-spectrum optoelectronic devices are one of the essential components of the modern information society. It can meet the requirements of information detection and processing in modern society, and can meet the requirements of environmental protection. Simple structure, easy fabrication, small size, and convenient use are one of the characteristics that a wide-spectrum optoelectronic device should possess. The device has a simple structure, a manufacturing process compatible with modern integrated circuit technology, does not pollute the environment, is easy to produce and use on a large scale, and can meet the information processing requirements of the modern information society.

Silicon (Si) is an essential material in modern silicon-based integrated circuit technology. It has a high optical absorption coefficient and can absorb almost all sunlight with a thickness of only 1 μm; the forbidden band width at room temperature is 1.12 eV. Iron disilicide (β-FeSi2) is an environmentally friendly semiconductor material with a higher optical absorption coefficient, the optimal thickness range for absorbing sunlight is 0.2μm-0.3μm, and the forbidden band width at room temperature is generally considered to be 0.86eV, Its fabrication process is compatible with modern silicon-based integrated circuit processes.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide a wide-spectrum optoelectronic device, which can meet the requirements of information processing, has a simple structure, can be manufactured by using the existing integrated circuit technology, has low cost and small volume, and will not be used in production, use and disposal. It pollutes the environment and is easy to popularize and use on a large scale.

To achieve the above object, the present invention provides the following technical solutions:

A wavelength-tunable wide-spectrum optoelectronic device mainly includes: a basic structure composed of (1) to (5). (1) is the silicon layer, which is located in the upper part of the structure and is the incident surface of the light; (2) is the β-FeSi2 layer, which is located in the middle of the structure; (3) is the silicon layer, which is located in the lower part of the structure and is the exit surface of the light; (4) It is the metal electrode on the upper surface, which forms ohmic contact with the silicon layer; (5) is the metal electrode on the lower surface, which forms ohmic contact with the silicon layer; the area of (4) occupies a small part of the area of (1) to ensure sufficient light incidence; The area of (5) occupies a part of the area of (3), allowing part of the light to be emitted, or occupying the whole, which can reflect the transmitted light back to the interior of the structure; (1), (2), (3) The thickness of the material is less than its skin depth.

As a preferred solution of the present invention: the basic structure can form a simple device alone, or can be combined to form a complex device; the wavelength of the transmitted light can be adjusted by changing the thickness of each layer.

Compared with the prior art, the beneficial effects of the present invention are: the present invention can realize the influence on the transmission characteristics of light of different wavelengths through the change of the thickness of each layer, that is, the reflectivity and transmittance thereof, and then the absorption rate, can be The optoelectronic device or the optical device is formed, and has the advantages of low cost, easy preparation, stable performance, convenient use, novelty, creativity and practicability.

Description of drawings

FIG. 1 is a basic configuration diagram (composed of (1) to (5)).

FIG. 2 is a schematic diagram of Case 1 of the implementation of the present invention.

FIG. 3 is a schematic diagram of Case 2 of the implementation of the present invention.

Detailed ways

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

For case 1 of the implementation of the present invention, please refer to FIG. 2, which can be regarded as a combination of three basic structural diagrams; they have a common β-FeSi2 layer (2) and a silicon layer (3), and the upper silicon layer ( 7) (10) (12) respectively have different thicknesses and are stepped; metal electrodes (8) (9) (11) are respectively arranged on the upper surface of the corresponding silicon layer; metal electrodes (6) are arranged on the silicon layer (3) ) on the lower surface, completely covering the lower bottom surface. The metal electrodes (8) (9) (11) are respectively combined with the metal electrodes (6) to output photocurrent or photoelectric signal.

For case 2 of the implementation of the present invention, please refer to FIG. 3, which can be regarded as a combination of three basic structural diagrams; they have a common β-FeSi2 layer (2) and a silicon layer (3), and the upper silicon layer ( 7) (10) (12) respectively have different thicknesses and are stepped; metal electrodes (8) (9) (11) are respectively arranged on the upper surface of the corresponding silicon layer; metal electrodes (13) (14) (15) They are arranged on the lower surface of the silicon layer (3), respectively correspond to the upper silicon layer, partially cover the lower bottom surface, and leave gaps between the electrodes. The light is incident from the upper silicon layer (7) (10) (12), passes through the β-FeSi2 layer (2) and the silicon layer (3), and is transmitted to the outside of the structure, in this case an optical device; metal electrode (8) (9) (11) is combined with the metal electrode (6) to output photocurrent or photoelectric signal, which is a photoelectric device.

The incident angle of light ranges from 0° to 90°; the thickness of each upper silicon layer can be continuously changed, such as sine or cosine shape fluctuation, or discontinuous, such as step shape change.

The measuring device for the transmitted light can be arranged in the space between (13) and (14), in the space between (14) and (15), or at other positions at the bottom; the position of the measuring device is different, The obtained light parameters are also different.

The combination of metal electrodes (8), (9) (11) and metal electrodes (6) can be (11) and (13), (9) and (14), (8) and (15), or (11) And (14), (11) and (15), (10) and (13), (10) and (15), (8) and (13), (8) and (14) and so on.

The working principle of the invention is as follows: different paths of photons and different materials will affect their optical transmission characteristics and optoelectronic properties; photons of different frequencies have different optical transmission properties and optoelectronic properties; The transport properties of photons and the effects of optoelectronic properties are also different. The optical complex refractive index, especially the anomalous dispersion, of the semiconductor materials β-FeSi2 and Si in a wide spectral range affects the unique properties of their constituent optoelectronic devices and has unique applications in the processing of modern information.

In the structure involved in the present invention, the thickness of each layer of material is required to vary within the range of its skin depth, and selecting an appropriate thickness can ensure the transmission of light or the absorption of light in a wide spectral range, so as to make optical devices or optoelectronic devices. ; Selective transmission of light of different wavelengths can be accomplished by changing the thickness of each layer of material; information processing and utilization can be accomplished by orderly collection of transmitted light or photocurrent.

It will be apparent to those skilled in the art that the present invention is not limited to the details of the above-described exemplary embodiments, but that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments are to be regarded in all respects as illustrative and not restrictive, and the scope of the invention is defined by the appended claims rather than the foregoing description, which are therefore intended to fall within the scope of the appended claims. All changes within the meaning and range of the equivalents of , are included in the present invention. Any reference signs in the claims shall not be construed as limiting the involved claim.

In addition, it should be understood that although this specification is described in terms of embodiments, not each embodiment only includes an independent technical solution, and this description in the specification is only for the sake of clarity, and those skilled in the art should take the specification as a whole , the technical solutions in each embodiment can also be appropriately combined to form other implementations that can be understood by those skilled in the art.

Claims (2)

1. A wavelength tunable broad spectrum optoelectronic device consisting essentially of: the basic structure is composed of (1) to (5). (1) The silicon layer is positioned on the upper part of the structure and is an incident plane of light; (2) is beta-FeSi₂A layer located in the middle of the structure; (3) the silicon layer is positioned at the lower part of the structure and is an emergent surface of light; (4) the upper surface metal electrode is in ohmic contact with the silicon layer; (5) the lower surface metal electrode is in ohmic contact with the silicon layer; (4) the area of (1) is a small part of the area of (1), so that enough light rays are ensured to be incident; (5) the area of (3) is a part of the area, which allows part of the light to be emitted, or the area of (3) is the whole area, and the transmitted light can be reflected back to the inside of the structure; (1) the thicknesses of the materials (2) and (3) are smaller than the skin depth; the basic structures can be used alone or combined with each other to form a new structure to form a wide-spectrum photoelectric device with adjustable wavelength.

2. A wavelength tunable broad spectrum optoelectronic device according to claim 1, wherein: the selection and adjustment of the wavelength of the transmitted light is completed through the thickness change of materials of all layers, and transmitted light, photocurrent or photoelectric signals are obtained; the thickness of each layer of material is smaller than the skin depth; basic structures alone or in combination with each other; the light is irradiated and incident from the upper surface, and the incident angle of the light can be adjusted.

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