CN114545536B - Light absorption enhancement structure and method based on two-dimensional transition metal sulfide - Google Patents
Light absorption enhancement structure and method based on two-dimensional transition metal sulfide Download PDFInfo
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Abstract
The invention provides a light absorption enhancement structure and a method based on two-dimensional transition metal sulfide, which belong to the technical field of photoelectricity, wherein the light absorption enhancement structure comprises the following components: a first dielectric layer, a light absorbing layer, and a second dielectric layer. The first medium layer is provided with a first reflecting surface; the light absorption layer is arranged on the first reflecting surface and is a two-dimensional transition metal sulfide; the second dielectric layer is arranged on the light absorption layer and provided with a second reflecting surface; and the first reflecting surface and the second reflecting surface are opposite to form a Fabry-Perot cavity, external light is transmitted into the Fabry-Perot cavity from the first medium layer or the second medium layer, and is circularly reflected for a plurality of times through the first reflecting surface and the second reflecting surface so as to be totally or partially reserved in the Fabry-Perot cavity, and a resonance absorption phenomenon is generated between the external light and the light absorbing layer. The light absorption enhancement structure absorbs the light through the resonance of the Fabry-Perot cavity so as to expand the strong absorption effect of the two-dimensional transition metal sulfide to the infrared light wave band.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a light absorption enhancement structure and method based on two-dimensional transition metal sulfide.
Background
Light absorption is one of the fundamental processes of light interaction with matter, often accompanied by intensity decay and energy conversion. The light absorption characteristic of the semiconductor material can be utilized to directly realize the conversion of light energy and other energy, and a plurality of interesting physical phenomena such as photoluminescence, photoacoustic effect, photoelectric effect and the like are generated, so that the application and development of the functional device based on a photoelectric or photo-thermal conversion mechanism are further promoted. Therefore, finding a material or designing a structure to achieve high efficiency, broad spectrum absorption has become a hot topic of research in the field of optoelectronic devices.
In recent years, two-dimensional materials (2D) have led to a hot-break in the field of nano-optoelectronics. Most of the atoms in the two-dimensional material layer are connected through covalent bonds or ionic bonds, the binding force is strong, and the layers are combined through weak van der Waals force. The uneven acting force between the layered structures endows the two-dimensional material with unique photoelectric properties, such as a tunable electronic energy band structure, high carrier mobility and the like, and has shown great potential in the aspect of constructing high-performance and new-function photoelectronic devices. However, since the ultra-thin layered structure of the two-dimensional material limits the interaction length of light and substances to an atomic level, the light absorption capability in free space is not satisfactory, and the application in the field of photoelectricity is greatly restricted.
The transition metal sulfide family covers tens of two-dimensional materials with different properties and has a chemical formula of MX 2 M refers to transition metal elements such as molybdenum, tungsten, niobium, rhenium and titanium, X refers to chalcogen elements such as sulfur, selenium and tellurium, the interaction strength of light and substances can be tuned by changing the number of layers, the number of layers is increased, exciton absorption is enhanced, and light absorption capability is improved, so that the method has advantages in a two-dimensional material system. For example, molybdenum disulfide (MoS 2 ) As a typical two-dimensional material of transition metal sulfide, its intrinsic absorptivity in the visible light range can be as high as 60%, well exceeding 2.3% of single-layer graphene and 15% of double-layer black phosphorus. However, due to MoS 2 The band gap (1.8-1.2 eV) and the frequency dispersion limit of the material are almost transparent in the infrared band, so that the potential application of the material in the infrared photoelectric field is fundamentally limited. In the previous work, we have introduced Mo vacancies or S vacancy defects to break through the multilayer MoS 2 The dilemma of zero absorption in the infrared band is that extrinsic infrared absorption is achieved, but defect absorption efficiency is very low and is still far from adequate for photodetection or other optoelectronic applications.
Similarly, in the transition metal sulfide material system, due to the atomic-level thickness characteristic and the limit of the intrinsic light absorption band edge of the material, ideal infrared light absorption cannot be obtained, so that a light absorption enhancement structure and method based on two-dimensional transition metal sulfide are required to be designed, and interaction between an optical field and the two-dimensional transition metal sulfide can be effectively enhanced, so that the problems are solved.
Disclosure of Invention
In view of the above drawbacks of the prior art, the present invention provides a light absorption enhancement structure and method based on a two-dimensional transition metal sulfide, which integrates the two-dimensional transition metal sulfide in a fabry-perot cavity formed by a first dielectric layer and a second dielectric layer, and changes the thickness of the two-dimensional transition metal sulfide to realize resonance absorption of the two-dimensional transition metal sulfide in the fabry-perot cavity for different wavebands, so as to expand the strong absorption effect of the two-dimensional transition metal sulfide to an infrared light waveband, thereby solving the technical problem that the two-dimensional transition metal sulfide cannot realize high absorption in the infrared light waveband.
To achieve the above and other related objects, the present invention provides a two-dimensional transition metal sulfide-based light absorption enhancing structure comprising: a first dielectric layer, a light absorbing layer, and a second dielectric layer.
The first medium layer is provided with a first reflecting surface; the light absorption layer is arranged on the first reflecting surface and is a two-dimensional transition metal sulfide; the second dielectric layer is arranged on the light absorption layer and provided with a second reflecting surface; and the first reflecting surface and the second reflecting surface are opposite to each other to form a Fabry-Perot cavity, and external light is transmitted into the Fabry-Perot cavity from the first medium layer or the second medium layer, and is circularly reflected for a plurality of times by the first reflecting surface and the second reflecting surface to be totally or partially retained in the Fabry-Perot cavity, so that a resonance phenomenon is generated between the first reflecting surface and the second reflecting surface and the light absorbing layer for absorption by the light absorbing layer.
In one example of the present invention, the thickness of the light absorbing layer is d, and the wavelength of the Fabry-Perot cavity resonance absorption peak isWherein n is the refractive index of the light absorbing layer material, phi 1 For the reflection phase shift of the light rays in the Fabry-Perot cavity after being reflected by the first reflecting surface, phi 2 And the reflection phase shift is carried out after the light rays in the Fabry-Perot cavity are reflected by the second reflecting surface.
In an example of the present invention, external light is transmitted from the second dielectric layer into the fabry-perot cavity, the thickness of the first dielectric layer is 90nm or more, and the thickness of the second dielectric layer is 7nm to 17nm.
In an example of the present invention, the material forming the first reflecting surface is at least one of gold, silver, or aluminum.
In an example of the present invention, the material of the second reflecting surface is at least one of tungsten, chromium, niobium, nickel, palladium, gold or silver.
In an example of the present invention, the transition metal element in the two-dimensional transition metal sulfide is any one or more of molybdenum, tungsten, niobium, rhenium, and titanium, and the chalcogen element in the two-dimensional transition metal sulfide is any one or more of sulfur, selenium, and tellurium.
In an example of the present invention, the two-dimensional transition metal sulfide is molybdenum disulfide, the thickness of the molybdenum disulfide is 30nm to 100nm, the wavelength band of the fabry-perot Luo Qiangna light resonance absorption peak is 700nm to 1700nm, and the absorption rate of the molybdenum disulfide at the wavelength of the light resonance absorption peak is 100%.
In an example of the present invention, the material of the first reflecting surface is gold, the material of the second reflecting surface is tungsten, the two-dimensional transition metal sulfide is molybdenum disulfide, and a peak width of an optical resonance absorption peak with an absorptivity of greater than 50% in the molybdenum disulfide is greater than or equal to 500nm.
In an example of the present invention, the first reflecting surface and the second reflecting surface are both made of gold, the two-dimensional transition metal sulfide is molybdenum disulfide, and a peak width of an optical resonance absorption peak with an absorptivity of greater than 50% in the molybdenum disulfide is greater than or equal to 100nm.
The invention also provides a light absorption enhancement method based on the two-dimensional transition metal sulfide, which adopts the two-dimensional transition metal sulfide as a light absorption layer, and the light absorption layer is arranged between a first medium layer and a second medium layer, so that a first reflecting surface of the first medium layer and a second reflecting surface of the second medium layer are opposite to form a Fabry-Perot cavity, and external light is transmitted from the first medium layer or the second medium layer into the Fabry-Perot cavity, and is circularly reflected for a plurality of times through the first reflecting surface and the second reflecting surface to be retained in the Fabry-Perot cavity wholly or partially for absorption by the light absorption layer.
According to the light absorption enhancement structure and the light absorption enhancement method based on the two-dimensional transition metal sulfide, the two-dimensional transition metal sulfide is integrated in the Fabry-Perot cavity formed by the first dielectric layer and the second dielectric layer, and resonance absorption of the two-dimensional transition metal sulfide to light of different wave bands in the Fabry-Perot cavity is achieved by changing the thickness of the two-dimensional transition metal sulfide, so that the strong absorption effect of the two-dimensional transition metal sulfide is expanded to an infrared light wave band. Compared with the prior art, the light absorption enhancement structure based on the two-dimensional transition metal sulfide realizes the absorption enhancement of the two-dimensional transition metal sulfide to infrared light through the resonance absorption of light in the Fabry-Perot cavity, and has the advantages of simple structure, good light absorption enhancement effect, convenience in preparation and low cost. Therefore, the invention effectively overcomes some practical problems in the prior art, thereby having high utilization value and use significance.
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In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic three-dimensional structure of a two-dimensional transition metal sulfide-based light absorption enhancement structure according to the present invention;
FIG. 2 is a schematic diagram of the structure of the region a of the two-dimensional transition metal sulfide-based light absorption enhancement structure of the present invention;
FIG. 3 is a schematic view of the principle of light absorption enhancement of a two-dimensional transition metal sulfide-based light absorption enhancement structure according to the present invention;
FIG. 4 is a schematic illustration of the absorption of a multi-layer molybdenum disulfide material in various light absorption enhancement structures in accordance with the present invention;
FIG. 5 is a schematic illustration of the absorption of multiple layers of molybdenum disulfide material of varying thickness in a light absorption enhancement structure in accordance with the present invention.
Description of element reference numerals
1. A substrate; 2. a first dielectric layer; 3. a light absorbing layer; 4. a second dielectric layer; 5. light rays.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict. It is also to be understood that the terminology used in the examples of the invention is for the purpose of describing particular embodiments only, and is not intended to limit the scope of the invention. The test methods in the following examples, in which specific conditions are not noted, are generally conducted under conventional conditions or under conditions recommended by the respective manufacturers.
It should be understood that the terms such as "upper," "lower," "left," "right," "middle," and "a" and the like are used in this specification for descriptive purposes only and not for purposes of limitation, and that the invention may be practiced without materially departing from the novel teachings and without departing from the scope of the invention.
Referring to fig. 1, the invention provides a light absorption enhancement structure and a method based on a two-dimensional transition metal sulfide, which integrate the two-dimensional transition metal sulfide in a fabry-perot cavity formed by a first dielectric layer and a second dielectric layer, and change the thickness of the two-dimensional transition metal sulfide to realize resonance absorption of the two-dimensional transition metal sulfide in the fabry-perot cavity to different wave bands so as to expand the strong absorption effect of the two-dimensional transition metal sulfide to an infrared light wave band, thereby solving the technical problem that the two-dimensional transition metal sulfide cannot realize high absorption in the infrared light wave band.
Referring to fig. 1 and 2, the two-dimensional transition metal sulfide-based light absorption enhancement structure includes a first dielectric layer 2, a light absorption layer 3, and a second dielectric layer 4.
Please refer toReferring to fig. 1 and 2, the first dielectric layer 2 is provided with a first reflecting surface, the light absorbing layer 3 is disposed on the first reflecting surface, the light absorbing layer 3 is made of a two-dimensional material of transition metal sulfide, the second dielectric layer 4 is disposed on the light absorbing layer 3, and a surface contacting with the light absorbing layer 3 is set as a second reflecting surface. Wherein the chemical formula of the two-dimensional transition metal sulfide is MX 2 M refers to transition metal elements (e.g., molybdenum, tungsten, niobium, rhenium, titanium), and X refers to chalcogenides (e.g., sulfur, selenium, tellurium); the transition metal element in the two-dimensional transition metal sulfide is one or more of molybdenum, tungsten, niobium, rhenium and titanium, and the chalcogen element in the two-dimensional transition metal sulfide is one or more of sulfur, selenium and tellurium.
Referring to fig. 3, the first reflecting surface of the first dielectric layer 2 and the second reflecting surface of the second dielectric layer 4 are relatively parallel to form a fabry-perot cavity, and the light absorbing layer 3 is integrated in the fabry-perot cavity. The external light 5 may be projected from the first dielectric layer 2 or the second dielectric layer 4 into the fp cavity, and circularly reflected by the first reflecting surface and the second reflecting surface in the fp cavity for multiple times, so that all or part of the light 5 stays in the fp cavity, and generates resonance phenomenon with the light absorbing layer at a specific wavelength, so that the light is absorbed by the light absorbing layer 3, and the wavelength for generating resonance absorption is determined by the fp cavity structure. Wherein the light absorption enhancement structure can maintain stable absorption under incident light in the range of 0 DEG to 60 DEG in three modes of no polarization, TE polarization and TM polarization. In the present invention, in order to implement reflection of the fabry-perot cavity to the light 5 in the cavity, a reflection surface may be disposed on a surface of the first dielectric layer 2 and the second dielectric layer 4 on both sides of the fabry-perot cavity, which faces the cavity, and the first dielectric layer 2 and the second dielectric layer 4 may implement the function of the reflection surface in the fabry-perot Luo Qiangqiang by adjusting the materials and thicknesses of the first dielectric layer 2 and the second dielectric layer 4. By optimizing the materials and thicknesses of the first dielectric layer 2 and the second dielectric layer 4, the reflection of the fabry-perot cavity to the light 5 in the cavity can be improved in an ideal state, so that all the light 5 stagnates in the fabry-perot cavity, but due to the possible transmission and loss of the light 5 on the first dielectric layer 2 and the second dielectric layer 4, part of the light 5 stagnating in the fabry-perot cavity should occupy at least 80% of all the incident light 5.
Because the absorption of the two-dimensional transition metal sulfide to the single incident light is weaker, the light absorption layer 3 adopting the two-dimensional transition metal sulfide is integrated in the Fabry-Perot cavity in the arrangement mode, so that the light absorption layer 3 generates Fabry-Perot resonance at the fixed wavelength of the infrared wave Duan Te, most of light 5 is retained in the Fabry-Perot cavity for cyclical reflection, the optical path of the light 5 in the cavity is increased, and the multiple effects of the light and the two-dimensional transition metal sulfide are caused to improve the light absorption rate of the two-dimensional transition metal sulfide.
Specifically, in the present invention, the external light 5 is transmitted from the second dielectric layer 4 into the fabry-perot cavity along the normal direction of the second reflecting surface in the second dielectric layer 4, in the fabry-perot cavity, the light 5 is projected onto the first dielectric layer 2 through the light absorbing layer 3 along the normal direction of the second reflecting surface, then the light 5 is reflected by the first reflecting surface having high reflectivity along the normal direction of the first reflecting surface, when the reflected light 5 is projected onto the second reflecting surface again through the light absorbing layer 3, the light 5 has undergone one round trip in the fabry-perot cavity, at which time the total phase shift accumulated by the light 5 in one round trip in the fabry-perot cavity isWhere n is the refractive index of the two-dimensional transition metal sulfide material in the light absorbing layer 3, d is the thickness of the two-dimensional transition metal sulfide material in the light absorbing layer 3, λ is the wavelength of the light 5 incident into the fabry-perot cavity, and Φ 1 For the reflection phase shift, phi, of the light 5 in the Fabry-Perot cavity after being reflected by the first reflecting surface 2 For a reflected phase shift of the fabry-perot intracavity light 5 after reflection by the second reflecting surface, e.g. Φ 1 、Φ 2 When the light ray 5 is correspondingly incident to the first reflecting surface or the second reflecting surface which is the light dense medium from the light absorption layer 3 which is the light sparse medium, the reflected light has half-wave loss relative to the incident light. And, when the above total phase shift δ satisfies the condition δ=2mpi, (m=0,1, 2.) light 5 resonates with the fabry-perot cavity, at which time the fabry-perot cavity as a whole has a reflectivity for external light 5(wherein R is 1 And R is 2 The reflectivity of the first reflective surface and the second reflective surface, respectively) reaches a minimum of 0%, and the absorbance of the light absorption enhancement structure can be found to be maximum according to the absorbance formula a=1-T-R of light. In addition, in the present invention, the first reflecting surface has a high reflectance R 1 The light ray 5 incident on the first reflecting surface can be totally reflected, and the transmittance T of the fabry-perot cavity is negligible, so that the light absorption enhancement structure of the present invention can achieve 100% of the absorption rate of the fabry-perot Luo Qiangna resonance wavelength light as shown by the formula a=1-T-R.
As can be seen from the above, in the present invention, the wavelength of light absorbed by resonance of the fabry-perot cavity can be changed by changing the thickness of the light absorbing layer 3 in the light absorption enhancing structure, and thus high absorption of infrared light by the light absorption enhancing structure can be achieved. For example, as shown in FIG. 5, when the thickness of the two-dimensional transition metal sulfide material in the light absorption layer 3 is d, the Fabry-Perot cavity resonance absorption peak wavelength in the light absorption enhancement structure isThe thickness d of the two-dimensional transition metal sulfide material is increased to enable the Fabry-Perot cavity resonance absorption peak to be red shifted, and the thickness d of the two-dimensional transition metal sulfide material is reduced to enable the Fabry-Perot cavity resonance absorption peak to be blue shifted, so that the tunable high absorption of the light absorption enhancement structure to the infrared band light connection can be realized by changing the thickness of the two-dimensional transition metal sulfide material in the light absorption layer 3.
In an embodiment of the present invention, in the light absorption enhancement structure, the two-dimensional transition metal sulfide used in the light absorption layer 3 is molybdenum disulfide, the material of the first dielectric layer 2 is at least one of gold, silver or aluminum, and the material of the second dielectric layer 4 is at least one of tungsten, chromium, niobium, nickel, palladium, gold or silver. In order to ensure that the external light 5 is transmitted from the second dielectric layer 4 into the fabry-perot cavity and totally reflected by the first reflecting surface in the fabry-perot cavity, the thickness of the first dielectric layer 2 of the light absorption enhancement structure is 90nm or more, preferably 100nm, and the thickness of the second dielectric layer 4 is 7nm to 17nm, preferably 10nm.
In this embodiment, the thickness of molybdenum disulfide is 30nm to 100nm, such as 30nm,40nm,50nm,60nm,70nm,80nm,90nm or 100nm, the wavelength range of the light resonance absorption peak of fabry-perot Luo Qiangna is 700nm to 1700nm, and the absorption rate of molybdenum disulfide in the fabry-perot cavity is 100% of the wavelength of the light absorption peak.
In one implementation of the present embodiment, as shown in FIGS. 4 and 5, the light absorption enhancement structure employs W/MoS 2 Au structure. Wherein, the material adopted by the first dielectric layer 2 is gold, the thickness of the first dielectric layer 2 is 100nm, the material adopted by the second dielectric layer 4 is tungsten, the thickness of the second dielectric layer 4 is any value of 7nm to 17nm, preferably 10nm, the material adopted by the light absorption layer 3 is molybdenum disulfide, and the thickness of the light absorption layer 3 is 30nm to 100nm. In W/MoS 2 In the Au structure, the position of the light resonance absorption peak of the light absorption enhancement structure in the wave band range from 900nm to 1700nm is adjusted by changing the thickness of molybdenum disulfide, and the peak width of the light resonance absorption peak with the absorptivity of more than 50% is more than or equal to 500nm.
In another implementation of this embodiment, the light absorption enhancement structure employs Au/MoS 2 Au structure. Wherein, the material adopted by the first dielectric layer 2 is gold, the thickness of the first dielectric layer 2 is 100nm, the material adopted by the second dielectric layer 4 is gold, the thickness of the second dielectric layer 4 is any value of 7nm to 17nm, preferably 10nm, the material adopted by the light absorption layer 3 is molybdenum disulfide, and the thickness of the light absorption layer 3 is 30nm to 100nm. In Au/MoS 2 In the Au structure, the position of the light resonance absorption peak of the light absorption enhancement structure in the wave band range of 700nm to 1300nm is adjusted by changing the thickness of molybdenum disulfide, and the peak width of the light resonance absorption peak with the absorptivity of more than 50% is more than or equal to 100nm.
From the above, compared with other perfect absorbers with micropatterned top metal layers, the absorption mechanism is mainly realized by electromagnetic resonance generated by the micropatterned top metal layers and bottom metal layers, the intermediate dielectric layer mainly acts as a spacer layer, the high absorption rate of the light absorption enhancement structure in the invention is mainly attributed to the resonance absorption effect of the intermediate light absorption layer 3 and the fabry-perot cavity, and the light absorption enhancement structure is only composed of three layers of films of the first dielectric layer 2, the light absorption layer 3 and the second dielectric layer 4, the preparation process is simple, the cost is low, and the light absorption enhancement structure can be prepared in a large area by a film deposition method.
For example, the preparation method of the light absorption enhancement structure based on the two-dimensional transition metal sulfide comprises the following steps:
providing a substrate 1, wherein the material used for the substrate 1 can be sapphire, silicon, gallium nitride, gallium arsenide, aluminum nitride or one of other flexible substrates 1 such as PET;
preparing a first dielectric layer 2 on a substrate 1, wherein the first dielectric layer 2 is made of at least one of gold, silver or aluminum, and the preparation thickness of the first dielectric layer 2 is greater than or equal to 50nm, preferably 100nm;
a light absorption layer 3 is arranged on the first dielectric layer 2, wherein the light absorption layer 3 adopts a material which is two-dimensional transition metal sulfide, molybdenum disulfide is preferably selected, and the thickness of the light absorption layer 3 is 30nm to 100nm, such as 30nm,40nm,50nm,60nm,70nm,80nm,90nm and 100nm;
preparing a second dielectric layer 4 on the light absorption layer 3, so that the first dielectric layer 2 and the second dielectric layer 4 together form a Fabry-Perot cavity, and the light absorption layer 3 is integrated in the Fabry-Perot cavity; wherein the material used for the second dielectric layer 4 is at least one of tungsten, chromium, niobium, nickel, palladium, gold or silver, and the thickness of the second dielectric layer 4 is 7nm to 17nm, preferably 10nm.
In addition, the invention also provides a light absorption enhancement method of the two-dimensional transition metal sulfide. The light absorption enhancement method includes: the two-dimensional transition metal sulfide is adopted as the light absorption layer 3, the light absorption layer 3 is arranged between the first medium layer 2 and the second medium layer 4, so that the first reflecting surface of the first medium layer 2 and the second reflecting surface of the second medium layer 4 are opposite to form a Fabry-Perot cavity, and external light 5 is transmitted into the Fabry-Perot cavity from the first medium layer 2 or the second medium layer 4 and is circularly reflected for a plurality of times through the first reflecting surface and the second reflecting surface to be retained in the Fabry-Perot cavity wholly or partially for absorption by the light absorption layer 3.
According to the light absorption enhancement structure and the light absorption enhancement method based on the two-dimensional transition metal sulfide, the two-dimensional transition metal sulfide is integrated in the Fabry-Perot cavity formed by the first dielectric layer and the second dielectric layer, and resonance absorption of the two-dimensional transition metal sulfide to light of different wave bands in the Fabry-Perot cavity is achieved by changing the thickness of the two-dimensional transition metal sulfide, so that the strong absorption effect of the two-dimensional transition metal sulfide is expanded to an infrared light wave band. Compared with the prior art, the light absorption enhancement structure based on the two-dimensional transition metal sulfide realizes the absorption enhancement of the two-dimensional transition metal sulfide to infrared light through the resonance absorption of light in the Fabry-Perot cavity, and has the advantages of simple structure, good light absorption enhancement effect, convenience in preparation and low cost. Therefore, the invention effectively overcomes some practical problems in the prior art, thereby having high utilization value and use significance.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (5)
1. A two-dimensional transition metal sulfide-based light absorption enhancement structure comprising:
a first dielectric layer on which a first reflecting surface is provided;
a light absorbing layer disposed on the first reflective surface, the light absorbing layer being a two-dimensional transition metal sulfide;
a second dielectric layer disposed on the light absorbing layer and having a second reflective surface;
the first reflecting surface and the second reflecting surface are opposite to each other to form a Fabry-Perot cavity, external light is transmitted into the Fabry-Perot cavity from the first medium layer or the second medium layer, and is circularly reflected for a plurality of times through the first reflecting surface and the second reflecting surface to be totally or partially retained in the Fabry-Perot cavity, and a resonance phenomenon is generated between the first reflecting surface and the second reflecting surface and the light absorbing layer for the light absorbing layer to absorb;
the two-dimensional transition metal sulfide is molybdenum disulfide, the first reflecting surface is made of gold, the second reflecting surface is made of tungsten, the thickness of the molybdenum disulfide is 30nm to 100nm, the wave band range of the Fabry-Perot Luo Qiangna light resonance absorption peak is 700nm to 1700nm, and the light resonance absorption peak width of the molybdenum disulfide, of which the absorptivity is more than 50%, is more than or equal to 500nm.
2. The two-dimensional transition metal sulfide-based light absorption enhancement structure according to claim 1, wherein the light absorption layer has a thickness d and the fabry-perot cavity resonance absorption peak has a wavelength ofWherein n is the refractive index of the light absorbing layer material, phi 1 For the reflection phase shift of the light rays in the Fabry-Perot cavity after being reflected by the first reflecting surface, phi 2 To be the institute
And the reflection phase shift of the light rays in the Fabry-Perot cavity after being reflected by the second reflecting surface.
3. The two-dimensional transition metal sulfide-based light absorption enhancement structure according to claim 1, wherein external light is transmitted from the second dielectric layer into the fabry-perot cavity, the thickness of the first dielectric layer is 90nm or more, and the thickness of the second dielectric layer is 7nm to 17nm.
4. The two-dimensional transition metal sulfide-based light absorption enhancement structure according to claim 1, wherein the molybdenum disulfide has an absorbance at the light resonance absorption peak wavelength of up to 100%.
5. A method of enhancing light absorption by a two-dimensional transition metal sulfide-based light absorption enhancement structure according to any one of claims 1 to 4, wherein external light is caused to be transmitted from the first dielectric layer or the second dielectric layer into the fabry-perot cavity and to be reflected by the first reflecting surface and the second reflecting surface for multiple cycles to be retained wholly or partially in the fabry-perot cavity for absorption by the light absorbing layer.
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| CN112684648A (en) * | 2020-11-27 | 2021-04-20 | 四川大学 | Broadband adjustable absorber based on vanadium dioxide and Fabry-Perot cavity |
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| FR2959352A1 (en) * | 2010-04-23 | 2011-10-28 | Centre Nat Rech Scient | ABSORBENT NANOMETRIC STRUCTURE OF ASYMMETRIC MIM TYPE AND METHOD OF MAKING SUCH A STRUCTURE |
| CN111223957A (en) * | 2020-02-24 | 2020-06-02 | 电子科技大学 | Fabry-Perot resonance near-infrared thermal electron photoelectric detector and preparation method thereof |
| CN112684648A (en) * | 2020-11-27 | 2021-04-20 | 四川大学 | Broadband adjustable absorber based on vanadium dioxide and Fabry-Perot cavity |
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| 吸收波长和吸收效率可控的超材料吸收器;江孝伟 等;物理学报;第70卷(第2期);第027804-1至027804-8页 * |
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