CN114512508A - perovskite/TOPCon-based laminated solar cell and preparation method thereof - Google Patents

perovskite/TOPCon-based laminated solar cell and preparation method thereof Download PDF

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CN114512508A
CN114512508A CN202111659252.1A CN202111659252A CN114512508A CN 114512508 A CN114512508 A CN 114512508A CN 202111659252 A CN202111659252 A CN 202111659252A CN 114512508 A CN114512508 A CN 114512508A
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silicon
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叶继春
杨熹
应智琴
郑晶茗
曾俞衡
肖惠
吴铭
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Ningbo Institute of Material Technology and Engineering of CAS
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Abstract

The invention belongs to the technical field of solar cells, and relates to a perovskite/TOPCon-based laminated solar cell, which comprises a TOPCon structure serving as a bottom cell, an intermediate layer and a perovskite structure serving as a top cell; the TOPCon structure comprises a silicon wafer layer, wherein a silicon oxide layer, a p-type doped polycrystalline silicon layer and a metal electrode layer are arranged on one side surface of the silicon wafer layer in a laminated mode, and a silicon oxide layer and an n-type doped polycrystalline silicon layer are arranged on the other side surface of the silicon wafer layer in a laminated mode; wherein the n-type doped polycrystalline silicon layer is attached to the middle layer, and the silicon oxide layer is in contact with the silicon wafer layer. The TOPCon structure is adopted to passivate the silicon cell, so that the limitation of the process temperature of the top cell is solved, and the performance of the laminated solar cell is improved.

Description

perovskite/TOPCon-based laminated solar cell and preparation method thereof
Technical Field
The invention belongs to the technical field of solar cells, and relates to a perovskite/TOPCon-based laminated solar cell and a preparation method thereof.
Background
The perovskite/crystalline silicon laminated solar cell can solve the thermalization loss of the crystalline silicon solar cell to high-energy photons, and is one of the best photovoltaic technologies for breaking through the theoretical limit efficiency of the traditional single junction cell in the future. Most of the perovskite/crystalline silicon laminated solar cells reported at present adopt a bottom cell based on a Silicon Heterojunction (SHJ) structure, wherein intrinsic amorphous silicon is used as a passivation layer, and doped amorphous silicon is used as a carrier transport layer.
In these present day perovskite/crystalline silicon tandem solar cells based on the SHJ structure, many problems still exist, such as: the amorphous silicon layer is not resistant to high temperatures, and when the preparation temperature of the perovskite top cell exceeds 250 ℃, the performance of the bottom cell will be affected, so that the amorphous silicon layer is not suitable for a top cell based on a high-temperature sintered titanium oxide or nickel oxide transmission layer; the amorphous silicon is easy to carry out epitaxial crystallization on rough silicon surface and non-111 crystal surface, thereby greatly reducing the passivation effect of the amorphous silicon, and therefore, the amorphous silicon is not suitable for most silicon bottom cells with nanometer texture; in addition, the process flow of the SHJ bottom battery is not compatible with the traditional mainstream PERC production line, which can greatly increase the production cost of the prior art.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a perovskite/TOPCon-based laminated solar cell, wherein a TOPCon structure is adopted to passivate a silicon cell, so that the limitation of the process temperature of the top cell is solved, and the performance of the laminated solar cell is improved.
One aspect of the invention provides a perovskite/TOPCon-based tandem solar cell comprising a TOPCon structure as a bottom cell, an intermediate layer and a perovskite structure as a top cell;
the TOPCon structure comprises a silicon wafer layer, wherein a silicon oxide layer, a p-type doped polycrystalline silicon layer and a metal electrode layer are arranged on one side surface of the silicon wafer layer in a laminated mode, and a silicon oxide layer and an n-type doped polycrystalline silicon layer are arranged on the other side surface of the silicon wafer layer in a laminated mode; wherein the n-type doped polycrystalline silicon layer is attached to the middle layer, and the silicon oxide layer is in contact with the silicon wafer layer.
The silicon oxide layer in the TOPCon structure can block epitaxial growth and simultaneously form chemical passivation; the doped polycrystalline silicon layer has a field passivation effect, the doped polycrystalline silicon layer can form bending of an energy band at an interface, carrier selectivity is improved, and meanwhile, silicon oxide is thin, so that carriers can be easily transmitted through tunneling.
Preferably, the intermediate layer comprises a buffer layer and a transparent conductive film, and the n-type doped polycrystalline silicon layer is attached to the buffer layer.
Preferably, the perovskite structure comprises: the hole transport layer, the perovskite active layer, the electron transport layer, the buffer layer, the transparent conductive film and the metal electrode layer are sequentially arranged.
Preferably, the buffer layer material is tin oxide or silver.
Preferably, the transparent conductive thin film material is an oxide formed of one or more of In, Sn, Sb, Zn, and Cd.
Preferably, the tandem solar cell comprises a metal electrode layer, a p-type doped polycrystalline silicon layer, a silicon oxide layer, a silicon chip layer, a silicon oxide layer, an n-type doped polycrystalline silicon layer, a buffer layer, a transparent conductive thin film, a hole transport layer, a perovskite active layer, an electron transport layer, a buffer layer, a transparent conductive thin film and a metal electrode layer which are sequentially arranged.
Another aspect of the present invention provides a method for preparing a perovskite/TOPCon-based tandem solar cell, comprising the steps of:
(1) using n-type monocrystalline silicon as a substrate, and removing an oxide layer by using hydrofluoric acid after cleaning to obtain a silicon wafer layer;
(2) treating the silicon wafer layer by concentrated nitric acid to generate silicon oxide layers on two sides of the silicon wafer layer;
(3) respectively depositing a P-doped amorphous silicon film precursor and a B-doped amorphous silicon film precursor on the silicon oxide layers on the two sides of the silicon wafer layer by utilizing PECVD (plasma enhanced chemical vapor deposition), and respectively forming an n-type doped polycrystalline silicon layer and a P-type doped polycrystalline silicon layer by using the P-doped amorphous silicon film precursor and the B-doped amorphous silicon film precursor after high-temperature annealing;
(4) removing the oxide layer by hydrofluoric acid, then depositing alumina on the n-type doped polycrystalline silicon layer and the p-type doped polycrystalline silicon layer respectively by utilizing an atomic layer deposition system, and removing the alumina by hydrofluoric acid after annealing;
(5) depositing a buffer layer on the n-type doped polycrystalline silicon layer;
(6) then depositing a transparent conductive film by PVD;
(7) preparing a hole transport layer on the transparent conductive film;
(8) spin-coating a perovskite precursor solution on the hole transport layer, and annealing to obtain a perovskite active layer;
(9) depositing an electron transport layer on the surface of the perovskite active layer by utilizing thermal evaporation;
(10) depositing a buffer layer on the electron transport layer;
(11) then, depositing a transparent conductive film on the surface of the buffer layer by utilizing PVD;
(12) and depositing metal electrode layers on the p-type doped polycrystalline silicon layer and the transparent conductive film by magnetron sputtering.
Preferably, the precursor of the P-doped amorphous silicon thin film is PH3The precursor of the B-doped amorphous silicon film is B2H6。
Preferably, in the step (3), the high-temperature annealing is performed at 800-1000 ℃ for 10-90 min.
Preferably, before the step (2) of treating the silicon wafer layer with concentrated nitric acid, the method further comprises the following steps: and etching the n-type monocrystalline silicon with the oxide layer removed by utilizing metal catalytic corrosion to form a textured structure.
Compared with the prior art, the invention has the following beneficial effects:
(1) in the traditional perovskite/SHJ laminated cell, the temperature tolerance of amorphous silicon in an SHJ structure is limited, and a high-temperature process cannot be used; the invention adopts a tunneling oxygen passivation structure to improve the tolerance temperature of the bottom cell and realize the high-efficiency perovskite/silicon crystal silicon laminated solar cell prepared by a high-temperature process;
(2) the silicon oxide layer in the TOPCon structure adopted by the invention can block epitaxial growth and simultaneously form chemical passivation; the doped polycrystalline silicon layer has a field passivation effect, the doped polycrystalline silicon layer can form bending of an energy band at an interface, the selectivity of carriers is improved, and meanwhile, the silicon oxide is very thin, so that the carriers can be easily transmitted through tunneling;
(3) the suede structure can improve the optical effect of the silicon bottom cell, but simultaneously needs a corresponding passivation technology to reduce the carrier recombination loss of the suede structure, and in the traditional perovskite/SHJ laminated cell, the problem of single crystal epitaxial growth of amorphous silicon on the rough surface in the SHJ structure is limited, and the bottom cell cannot obtain good passivation; the invention provides good field passivation and chemical passivation for the bottom cell by adopting a tunneling oxygen passivation structure, wherein the silicon oxide layer can also prevent the problem of single crystal epitaxial growth of amorphous silicon; therefore, the prepared perovskite/TOPCon laminated solar cell can also obtain the same electrical property as a plane structure on a textured bottom cell;
(4) the technology of the invention is compatible with the current traditional crystalline silicon PERC cell process, can be compatible with the existing production line, and shows good industrialization prospect.
Drawings
FIG. 1 is a flow diagram of the present invention for preparing a perovskite/TOPCon based tandem solar cell;
figure 2 is a current-voltage graph of a perovskite/TOPCon based tandem solar cell of example 1 of the present invention.
Detailed Description
In the following, embodiments will be described in detail with respect to the method of fabricating a perovskite/TOPCon-based tandem solar cell of the present invention, however, these embodiments are exemplary and the present disclosure is not limited thereto. And the drawings used herein are for the purpose of illustrating the disclosure better and are not intended to limit the scope of the invention.
In some embodiments of the present invention, a method for manufacturing a perovskite/TOPCon-based tandem solar cell is provided, where a flow chart of the manufacturing method is shown in fig. 1, and specifically includes the following steps:
(1) the method comprises the following steps of (1) taking n-type monocrystalline silicon as a substrate, cleaning, and removing an oxide layer by hydrofluoric acid to obtain a silicon wafer layer, wherein the thickness of the silicon wafer layer is 100-300 mu m;
and (2) polishing the double surfaces of the n-type monocrystalline silicon, cleaning by adopting an RCA (Rolling circle reactor) process, and then cleaning by adopting a hydrofluoric acid aqueous solution to remove an oxide layer, wherein the concentration of the hydrofluoric acid aqueous solution is 1-5%, and the cleaning time is 5-20 s.
(2) Treating the silicon chip layer by concentrated nitric acid to generate silicon oxide layers on two sides of the silicon chip layer, wherein the thickness of the silicon oxide layers is 0.8-2 nm;
and (3) putting the sample into the concentrated nitric acid, and soaking for 5-15 min, wherein the mass fraction of the concentrated nitric acid is more than or equal to 68%.
(3) Depositing a P-doped amorphous silicon film precursor and a B-doped amorphous silicon film precursor on the silicon oxide layers on the two sides of the silicon wafer layer respectively by utilizing PECVD, annealing for 10-90 min at 800-1000 ℃, and forming an n-type doped polycrystalline silicon layer and a P-type doped polycrystalline silicon layer by using the P-doped amorphous silicon film precursor and the B-doped amorphous silicon film precursor respectively;
putting the sample obtained in the step (2) into PECVD equipment, and introducing a P-doped amorphous silicon film precursor PH3Annealing at 800-1000 ℃ for 10-90 min to obtain an n-type doped polysilicon layer with the thickness of 10-30 mu m on one side of the silicon oxide layer; then introducing a precursor B of the amorphous silicon film doped with B2H6And annealing at 800-1000 ℃ for 10-90 min, and depositing on the other side of the silicon oxide layer to obtain a p-type doped polycrystalline silicon layer with the thickness of 10-30 mu m.
(4) Removing the oxide layer by hydrofluoric acid, then respectively depositing alumina on the n-type doped polycrystalline silicon layer and the p-type doped polycrystalline silicon layer by utilizing an atomic layer deposition system (ALD), and removing the alumina by hydrofluoric acid after annealing;
cleaning the surface of the sample in the step (3) by using a hydrofluoric acid aqueous solution to remove an oxide layer (the concentration of the hydrofluoric acid aqueous solution is 1-5%, the cleaning time is 5-20 s), depositing aluminum oxide by using an ALD system, wherein the deposition temperature is 70-100 ℃, the deposition time is 10-30 min, annealing is carried out after the aluminum oxide is deposited for 10-30 min, and the annealing temperature is 300-500 ℃; and then cleaning with hydrofluoric acid aqueous solution to remove aluminum oxide (the concentration of the hydrofluoric acid aqueous solution is 1-5%, and the cleaning time is 5-20 s).
(5) Depositing a buffer layer on the n-type doped polycrystalline silicon layer;
the buffer layer is made of tin oxide and/or silver, the ALD is adopted to deposit a tin oxide layer (the deposition temperature is 70-100 ℃ and the deposition time is 10-30 min), or the thermal evaporation (the normal temperature and the deposition time are 0.5-2 min) is adopted to deposit silver, the thickness of the tin oxide layer is 5-20 nm, and the thickness of the silver is 0.5-2 nm.
(6) Then, depositing a transparent conductive film by PVD (physical vapor deposition), wherein the thickness is 5-15 nm;
the transparent conductive film material is an oxide formed by one or more of In, Sn, Sb, Zn and Cd, and is obtained by depositing at room temperature for 1000-2000 s at 60-100W by PVD.
(7) Preparing a hole transport layer on the transparent conductive film;
the hole transport layer is a nickel oxide film hole transport layer or a poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] (PTAA) hole transport layer. When the hole transport layer is a nickel oxide film hole transport layer, firstly spin-coating (the spin-coating speed is 2000-3000 rpm and the spin-coating time is 30-50 s) a nickel nitrate hexahydrate-containing solution (9g of nickel nitrate hexahydrate is dissolved in 50-300 ml of deionized water, then adding 1M NaOH, adjusting the pH value to 10) on the surface of the transparent conductive film, and annealing at 250-350 ℃ for 30-50 min to form the nickel oxide film hole transport layer; when the hole transport layer is a PTAA hole transport layer, a PTAA solution (the PTAA solution is a PTAA chlorobenzene solution with the mass fraction of 3-8 mg/mL) is spin-coated on the surface of the transparent conductive film, and annealing is carried out at the temperature of 80-110 ℃ for 3-6 min to form the PTAA hole transport layer.
(8) Spin-coating a perovskite precursor solution on the hole transport layer, and annealing to obtain a perovskite active layer;
the perovskite precursor solution is formed by dissolving common metal halide and/or organic halide in an organic solvent, the spin-coating rotation speed is 2000-4000 rpm, the spin-coating time is 30-60 s, and annealing is carried out for 20-40 min at the temperature of 100-150 ℃.
(9) Depositing an electron transport layer on the surface of the perovskite active layer by thermal evaporation;
the electron transport layer can be C60 and BCP electron transport layers; placing the sample obtained in the step (8) in a vapor deposition cabin body to
Figure BDA0003449114490000061
And (3) evaporating C60 at a speed rate and with a thickness of 8-12 nm, and continuously evaporating copper-coated copper (BCP) on C60 in an evaporation chamber with a thickness of 8-12 nm.
(10) Depositing a buffer layer on the electron transport layer;
the buffer layer is made of tin oxide and/or silver, the ALD is adopted to deposit a tin oxide layer (the deposition temperature is 70-100 ℃ and the deposition time is 10-30 min), or the thermal evaporation (the normal temperature and the deposition time are 0.5-2 min) is adopted to deposit silver, the thickness of the tin oxide layer is 5-20 nm, and the thickness of the silver is 0.5-2 nm.
(11) Then, depositing a transparent conductive film on the surface of the buffer layer by PVD (physical vapor deposition), wherein the thickness is 5-15 nm;
the transparent conductive film material is an oxide formed by one or more of In, Sn, Sb, Zn and Cd, and is obtained by depositing at room temperature for 1000-2000 s at 60-100W by PVD.
(12) Depositing a metal electrode layer on the p-type doped polycrystalline silicon layer and the transparent conductive film by using Ag or Au as a metal target material through magnetron sputtering, wherein the thickness of the metal electrode layer is 200-600 nm.
In other embodiments of the present invention, a method for preparing a perovskite/TOPCon tandem solar cell based on a textured bottom cell is provided, which comprises the following steps:
(1) the method comprises the following steps of (1) taking n-type monocrystalline silicon as a substrate, cleaning, removing an oxide layer by hydrofluoric acid, and etching the n-type monocrystalline silicon with the oxide layer removed by metal catalytic corrosion to obtain a silicon wafer layer with a textured structure;
and placing the n-type monocrystalline silicon without the oxide layer in a metal catalytic corrosion solution, and corroding at room temperature for 2-6 min to form a rough nano suede. The metal catalytic corrosion solution is AgNO3/HF/H2O2Mixed solution (AgNO)3The concentration is 0.001-0.005 mol/L, the concentration of HF is 8-9 mol/L, H2O2The concentration is 0.3 to 0.5 mol/L).
The subsequent steps are the same as the above steps (2) - (10).
The technical solutions of the present invention are further described and illustrated below by specific examples, it should be understood that the specific examples described herein are only for the purpose of facilitating understanding of the present invention, and are not intended to be specific limitations of the present invention. The raw materials used in the examples of the present invention are those commonly used in the art, and the methods used in the examples are those conventional in the art, unless otherwise specified.
Example 1
The perovskite/TOPCon-based tandem solar cell comprises a metal electrode layer, a p-type doped polycrystalline silicon layer, a silicon oxide layer, a silicon chip layer, a silicon oxide layer, an n-type doped polycrystalline silicon layer, a buffer layer, a transparent conductive thin film, a hole transport layer, a perovskite active layer, an electron transport layer, a buffer layer, a transparent conductive thin film and a metal electrode layer which are sequentially arranged. The preparation method is as follows:
(1) using double-side polished n-type monocrystalline silicon with the thickness of 280 mu m as a substrate, and cleaning the substrate for 10s by using 1% hydrofluoric acid aqueous solution after RCA (Rolling circle reactor) process cleaning to remove an oxide layer to obtain a silicon wafer layer;
(2) soaking the silicon wafer layer in concentrated nitric acid for 10min to form silicon oxide layers with thickness of 1.2nm on both sides of the silicon wafer layer;
(3) placing the sample obtained in the step (2) in PECVD equipment, and introducing PH3Annealing at 900 deg.C for 60min to obtain an n-type doped polysilicon layer with a thickness of 20 μm on one side of the silicon oxide layer; then introducing B2H6Annealing at 900 deg.C for 60min, and depositing on the other side of the silicon oxide layer to obtain a p-type doped polysilicon layer with a thickness of 21 μm;
(4) cleaning the surface of the sample in the step (3) for 10s by adopting a 1% hydrofluoric acid aqueous solution to remove an oxide layer, and respectively depositing alumina on an n-type doped polycrystalline silicon layer and a p-type doped polycrystalline silicon layer by utilizing an ALD system, wherein the deposition temperature is 80 ℃, the deposition time is 20min, the alumina deposition is annealed for 20min, and the annealing temperature is 450 ℃; then cleaning with 1% hydrofluoric acid water solution for 10s to remove aluminum oxide;
(5) depositing a tin oxide layer by ALD (deposition temperature is 80 ℃, deposition time is 20min) to obtain a buffer layer with the thickness of 11 nm;
(6) depositing 1400s at room temperature under 80W by PVD to obtain an indium zinc oxide film with the thickness of 10 nm;
(7) firstly, spin-coating (the spin-coating rotation speed is 2500rpm and the spin-coating time is 40s) a nickel nitrate solution containing hexahydrate (9g of nickel nitrate hexahydrate is dissolved in 150ml of deionized water, then adding 1M NaOH, adjusting the pH value to 10), and then annealing at 300 ℃ for 50min to form a nickel oxide film hole transport layer with the thickness of 1 nm;
(8) preparing a perovskite precursor solution: the molar ratio is 1: 1 PbI of2And CH3NH3Dissolving I in DMF and DMSO (volume ratio of DMF to DMSO is 2: 1) organic solvent, spin-coating (2500rpm, 50s) on the hole transport layer, and annealing at 120 deg.C for 30min to obtain 600nm perovskite active layer;
(9) placing the sample obtained in the step (8) in a vapor deposition cabin body to
Figure BDA0003449114490000091
Evaporating C60 at a speed rate, wherein the thickness is 10nm, continuously evaporating BCP on C60 in an evaporation chamber body, and the thickness is 10nm to obtain an electron transport layer;
(10) depositing a tin oxide layer by ALD (deposition temperature is 80 ℃, deposition time is 20min) to obtain a buffer layer with the thickness of 11 nm;
(11) depositing 1400s at room temperature under 80W by PVD to obtain an indium zinc oxide film with the thickness of 10 nm;
(12) and depositing the Ag metal electrode layer with the Ag as a metal target on the p-type doped polycrystalline silicon layer by utilizing magnetron sputtering to obtain an Ag metal electrode layer with the thickness of 500nm, and depositing the Ag metal electrode layer with the thickness of 200nm on the indium zinc oxide film by utilizing magnetron sputtering.
Example 2
The perovskite/TOPCon-based tandem solar cell comprises a metal electrode layer, a p-type doped polycrystalline silicon layer, a silicon oxide layer, a silicon chip layer, a silicon oxide layer, an n-type doped polycrystalline silicon layer, a buffer layer, a transparent conductive thin film, a hole transport layer, a perovskite active layer, an electron transport layer, a buffer layer, a transparent conductive thin film and a metal electrode layer which are sequentially arranged. The preparation method is as follows:
(1) using double-side polished n-type monocrystalline silicon with the thickness of 300 mu m as a substrate, and cleaning for 8s by using 2% hydrofluoric acid aqueous solution after RCA (Rolling circle reactor) process cleaning to remove an oxide layer; then placing the n-type monocrystalline silicon without the oxide layer in a metal catalytic corrosion solution, and corroding for 3min at room temperature to form a rough nano textured silicon wafer layer; (AgNO is a metal-catalyzed etching solution)3/HF/H2O2Mixed solution (AgNO)3The concentration is 0.002mol/L, the HF concentration is 8.24mol/L, H2O2The concentration is 0.41mol/L)
(2) Soaking the silicon wafer layer in concentrated nitric acid for 8min to form silicon oxide layers with thickness of 1.1nm on both sides of the silicon wafer layer;
(3) placing the sample obtained in the step (2) in PECVD equipment, and introducing PH3Annealing at 800 deg.C for 70min to obtain an n-type doped polysilicon layer with a thickness of 18 μm on one side of the silicon oxide layer; then introducing B2H6Annealing at 800 deg.C for 70min, and depositing on the other side of the silicon oxide layer to obtain a p-type doped polysilicon layer with a thickness of 18 μm;
(4) cleaning the surface of the sample in the step (3) for 8s by adopting 2% hydrofluoric acid aqueous solution to remove an oxide layer, depositing aluminum oxide on the n-type doped polycrystalline silicon layer and the p-type doped polycrystalline silicon layer respectively by utilizing an ALD system, wherein the deposition temperature is 90 ℃, the deposition time is 25min, and the annealing is carried out for 25min after the aluminum oxide is deposited, and the annealing temperature is 400 ℃; then cleaning for 8s by adopting 2% hydrofluoric acid water solution to remove aluminum oxide;
(5) depositing a tin oxide layer by ALD (deposition temperature is 90 ℃, deposition time is 25min) to obtain a buffer layer with the thickness of 12 nm;
(6) depositing 1500s at 90W and room temperature by using PVD to obtain an indium zinc oxide film with the thickness of 11 nm;
(7) spin-coating a PTAA solution (the PTAA solution is a PTAA chlorobenzene solution with the mass fraction of 5 mg/mL) on the surface of the indium zinc oxide film (the spin-coating speed is 3000rpm and the spin-coating time is 35s), and annealing at 90 ℃ for 5min to form a PTAA hole transport layer with the thickness of 1.2 nm;
(8) preparing a perovskite precursor solution: the molar ratio is 1: 1 PbI of2And CH3NH3Dissolving I in an organic solvent of DMF and DMSO (the volume ratio of DMF to DMSO is 2: 1), spin-coating (3000rpm, 50s) on the hole transport layer, and annealing at 120 ℃ for 30min to obtain a 600nm perovskite active layer;
(9) placing the sample obtained in the step (8) in a vapor deposition cabin body to
Figure BDA0003449114490000101
Evaporating C60 at a speed rate, wherein the thickness is 10nm, continuously evaporating BCP on C60 in an evaporation chamber body, and the thickness is 10nm to obtain an electron transport layer;
(10) depositing a tin oxide layer by ALD (deposition temperature is 90 ℃, deposition time is 25min) to obtain a buffer layer with the thickness of 12 nm;
(11) depositing 1500s at 90W and room temperature by PVD to obtain an indium zinc oxide film with the thickness of 11 nm;
(12) and depositing the Ag metal electrode layer with the Ag as a metal target on the p-type doped polycrystalline silicon layer by utilizing magnetron sputtering to obtain an Ag metal electrode layer with the thickness of 500nm, and depositing the Ag metal electrode layer with the thickness of 200nm on the indium zinc oxide film by utilizing magnetron sputtering.
Data for the perovskite/TOPCon based tandem solar cells prepared in example 1 are shown in fig. 2 and table 1 below.
TABLE 1
Figure BDA0003449114490000111
The open-circuit voltage of the device in forward scanning and reverse scanning is 1.79V, the filling factors are 77.6 percent and 79.0 percent respectively, and the current is 18.2mA/cm2The final photoelectric conversion efficiencies were 25.3% and 25.7%, respectively.
Finally, it should be noted that the specific examples described herein are merely illustrative of the spirit of the invention and do not limit the embodiments of the invention. Various modifications, additions and substitutions for the embodiments described herein will occur to those skilled in the art, and all such embodiments are neither required nor possible. While the invention has been described with respect to specific embodiments, it will be appreciated that various changes and modifications may be made without departing from the spirit and scope of the invention, as defined by the appended claims.

Claims (10)

1. A perovskite/TOPCon based tandem solar cell, characterized in that it comprises a TOPCon structure as bottom cell, an intermediate layer and a perovskite structure as top cell;
the TOPCon structure comprises a silicon wafer layer, wherein a silicon oxide layer, a p-type doped polycrystalline silicon layer and a metal electrode layer are arranged on one side surface of the silicon wafer layer in a laminated mode, and a silicon oxide layer and an n-type doped polycrystalline silicon layer are arranged on the other side surface of the silicon wafer layer in a laminated mode; wherein the n-type doped polysilicon layer is attached to the intermediate layer.
2. The perovskite/TOPCon based tandem solar cell according to claim 1, wherein the intermediate layer comprises a buffer layer and a transparent conductive thin film, the n-doped polycrystalline silicon layer being attached to the buffer layer.
3. The perovskite/TOPCon based tandem solar cell according to claim 1, wherein the perovskite structure comprises: the hole transport layer, the perovskite active layer, the electron transport layer, the buffer layer, the transparent conductive film and the metal electrode layer are sequentially arranged.
4. The perovskite/TOPCon based tandem solar cell according to claim 2 or 3, wherein the buffer layer material is tin oxide and/or silver.
5. The perovskite/TOPCon based tandem solar cell according to claim 2 or 3, wherein the transparent conductive thin film material is an oxide formed of one or more of In, Sn, Sb, Zn and Cd.
6. The perovskite/TOPCon based tandem solar cell according to claim 1, comprising a metal electrode layer, a p-type doped polysilicon layer, a silicon oxide layer, a silicon wafer layer, a silicon oxide layer, an n-type doped polysilicon layer, a buffer layer, a transparent conductive thin film, a hole transport layer, a perovskite active layer, an electron transport layer, a buffer layer, a transparent conductive thin film and a metal electrode layer in that order.
7. The method of fabricating a perovskite/TOPCon based tandem solar cell according to claim 6, comprising the steps of:
(1) using n-type monocrystalline silicon as a substrate, cleaning, and removing an oxide layer by using hydrofluoric acid to obtain a silicon wafer layer;
(2) treating the silicon wafer layer by concentrated nitric acid to generate silicon oxide layers on two sides of the silicon wafer layer;
(3) respectively depositing a P-doped amorphous silicon film precursor and a B-doped amorphous silicon film precursor on the silicon oxide layers on the two sides of the silicon wafer layer by utilizing PECVD (plasma enhanced chemical vapor deposition), and respectively forming an n-type doped polycrystalline silicon layer and a P-type doped polycrystalline silicon layer by using the P-doped amorphous silicon film precursor and the B-doped amorphous silicon film precursor after high-temperature annealing;
(4) removing the oxide layer by hydrofluoric acid, then depositing alumina on the n-type doped polycrystalline silicon layer and the p-type doped polycrystalline silicon layer respectively by utilizing an atomic layer deposition system, and removing the alumina by hydrofluoric acid after annealing;
(5) depositing a buffer layer on the n-type doped polycrystalline silicon layer;
(6) then depositing a transparent conductive film by PVD;
(7) preparing a hole transport layer on the transparent conductive film;
(8) spin-coating a perovskite precursor solution on the hole transport layer, and annealing to obtain a perovskite active layer;
(9) depositing an electron transport layer on the surface of the perovskite active layer by thermal evaporation;
(10) depositing a buffer layer on the electron transport layer;
(11) then, depositing a transparent conductive film on the surface of the buffer layer by utilizing PVD;
(12) and depositing metal electrode layers on the p-type doped polycrystalline silicon layer and the transparent conductive film by magnetron sputtering.
8. The method of claim 7, wherein the P-doped amorphous silicon thin film precursor is PH3The precursor of the B-doped amorphous silicon film is B2H6。
9. The method according to claim 7, wherein the high temperature annealing in step (3) is performed at 800 to 1000 ℃ for 10 to 90 min.
10. The method of claim 7, further comprising, before the step (2) of treating the silicon wafer layer with concentrated nitric acid, the steps of: and etching the n-type monocrystalline silicon with the oxide layer removed by utilizing metal catalytic corrosion to form a textured structure.
CN202111659252.1A 2021-12-31 2021-12-31 perovskite/TOPCon-based laminated solar cell and preparation method thereof Pending CN114512508A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115305576A (en) * 2022-07-25 2022-11-08 宣城先进光伏技术有限公司 Perovskite material and preparation method and application thereof
EP4325586A1 (en) * 2022-08-17 2024-02-21 Trina Solar Co., Ltd A solar battery

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115305576A (en) * 2022-07-25 2022-11-08 宣城先进光伏技术有限公司 Perovskite material and preparation method and application thereof
EP4325586A1 (en) * 2022-08-17 2024-02-21 Trina Solar Co., Ltd A solar battery

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