CN114497345A - 具有压电薄膜的偏置结构及其形成方法 - Google Patents
具有压电薄膜的偏置结构及其形成方法 Download PDFInfo
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- CN114497345A CN114497345A CN202210050861.5A CN202210050861A CN114497345A CN 114497345 A CN114497345 A CN 114497345A CN 202210050861 A CN202210050861 A CN 202210050861A CN 114497345 A CN114497345 A CN 114497345A
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- piezoelectric film
- bottom electrode
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- electrode
- film
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 230000010287 polarization Effects 0.000 claims abstract description 73
- 230000002269 spontaneous effect Effects 0.000 claims abstract description 70
- 239000000463 material Substances 0.000 claims abstract description 29
- 239000010408 film Substances 0.000 claims description 212
- 239000010409 thin film Substances 0.000 claims description 39
- 239000010410 layer Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000002356 single layer Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910002714 Ba0.5Sr0.5 Inorganic materials 0.000 claims description 4
- 229910019606 La0.5Sr0.5CoO3 Inorganic materials 0.000 claims description 4
- 229910002148 La0.6Sr0.4MnO3 Inorganic materials 0.000 claims description 4
- 229910002340 LaNiO3 Inorganic materials 0.000 claims description 4
- 229910002353 SrRuO3 Inorganic materials 0.000 claims description 4
- 229910002113 barium titanate Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910002902 BiFeO3 Inorganic materials 0.000 claims description 3
- 229910003781 PbTiO3 Inorganic materials 0.000 claims description 3
- 229910020696 PbZrxTi1−xO3 Inorganic materials 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 abstract description 30
- 238000013461 design Methods 0.000 abstract description 10
- 238000004544 sputter deposition Methods 0.000 description 26
- 239000000758 substrate Substances 0.000 description 26
- 230000005684 electric field Effects 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 230000000694 effects Effects 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 8
- 230000028161 membrane depolarization Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000002708 enhancing effect Effects 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 239000010963 304 stainless steel Substances 0.000 description 1
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
- H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
底电极 | 压电薄膜 | 顶电极 | 压电常数(d<sub>33</sub>) |
Pt | PZT | Pt | 88.14 |
LNO | PZT | Pt | 143.23 |
底电极 | 压电薄膜 | 顶电极 | 压电常数(d<sub>33</sub>) |
Al | PZT | Al | 76.29 |
Au | PZT | Au | 51.41 |
底电极 | 压电薄膜 | 顶电极 | 压电常数(d<sub>33</sub>) |
Cr | BTO | Cr | 6.18 |
LNO | BTO | LNO | 10.46 |
Claims (17)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210050861.5A CN114497345A (zh) | 2022-01-17 | 2022-01-17 | 具有压电薄膜的偏置结构及其形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN202210050861.5A CN114497345A (zh) | 2022-01-17 | 2022-01-17 | 具有压电薄膜的偏置结构及其形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN114497345A true CN114497345A (zh) | 2022-05-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202210050861.5A Pending CN114497345A (zh) | 2022-01-17 | 2022-01-17 | 具有压电薄膜的偏置结构及其形成方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN114497345A (zh) |
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2022
- 2022-01-17 CN CN202210050861.5A patent/CN114497345A/zh active Pending
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20231122 Address after: 201100 No. 800, Dongchuan Road, Shanghai, Minhang District Applicant after: Liu Yue Address before: 200030 No. 1954, Huashan Road, Shanghai, Xuhui District Applicant before: SHANGHAI JIAO TONG University |
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20240403 Address after: Room 24, Room 415, 4th Floor, Building A, Zhongchuang Service Center, No.1 Xihu Road, Wujin National High tech Industrial Development Zone, Changzhou City, Jiangsu Province, 213000 Applicant after: Shenglan Semiconductor (Changzhou) Co.,Ltd. Country or region after: China Address before: 201100 No. 800, Dongchuan Road, Shanghai, Minhang District Applicant before: Liu Yue Country or region before: China |