CN114497328A - High-reliability light-emitting diode structure and packaging body - Google Patents
High-reliability light-emitting diode structure and packaging body Download PDFInfo
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- CN114497328A CN114497328A CN202210108633.9A CN202210108633A CN114497328A CN 114497328 A CN114497328 A CN 114497328A CN 202210108633 A CN202210108633 A CN 202210108633A CN 114497328 A CN114497328 A CN 114497328A
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- 238000004806 packaging method and process Methods 0.000 title abstract description 8
- 239000010410 layer Substances 0.000 claims abstract description 306
- 239000004065 semiconductor Substances 0.000 claims abstract description 111
- 230000004888 barrier function Effects 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000011241 protective layer Substances 0.000 claims abstract description 41
- 229910000679 solder Inorganic materials 0.000 claims abstract description 33
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 29
- 239000010980 sapphire Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims description 31
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- 238000009413 insulation Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 2
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- 230000007774 longterm Effects 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 2
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- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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Abstract
The invention relates to a high-reliability flip light-emitting diode structure and a packaging body, wherein a light-emitting diode comprises a sapphire substrate, a buffer layer, a first semiconductor layer, a first contact electrode, an active layer, a second semiconductor layer, a transparent conducting layer, a second contact electrode, a distributed Bragg reflector, a first bonding pad and a second bonding pad, wherein a first barrier protective layer is arranged on the front surface of part of the distributed Bragg reflector; the first bonding pad and the second bonding pad in the light emitting diode are fixed on the circuit substrate through the solder balls, and the front surface of the circuit substrate on the outer side of the solder balls is provided with a fifth barrier protection layer to form a packaging body. The invention can improve the long-term high-temperature high-humidity aging reliability of the chip, improve the thermal diffusion of the chip and improve the high-temperature aging stability of the chip.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a high-reliability flip light-emitting diode structure and a packaging body.
Background
The flip-chip light emitting diode has the advantages of high reliability, high brightness and the like, and is widely applied to the fields of high-power illumination, vehicle-mounted illumination, backlight, flexible filaments, mini display and the like.
The flip-chip light-emitting diode is generally bonded on a circuit substrate in a soldering mode, the soldering material is SnAgCu alloy, Ag in the SnAgCu alloy is active and can migrate into the chip in the high-temperature high-humidity aging process of the chip to cause electric leakage of the chip. Usually with DBR structures or dense SiO2As a protective layer, it does not effectively block Ag migration.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a light-emitting diode structure and a packaging body which can improve the long-term reliability of a flip chip under the conditions of high temperature, high humidity and aging.
According to the technical scheme provided by the invention, the high-reliability flip-chip light-emitting diode structure is characterized in that a buffer layer is arranged on the front surface of a sapphire substrate, a first semiconductor layer is arranged on the front surface of the buffer layer, the front surface of the first semiconductor layer is a step surface, a first contact electrode is arranged on the front surface low step surface of the first semiconductor layer, an active layer is arranged on the front surface high step surface of the first semiconductor layer, a second semiconductor layer is arranged on the front surface of the active layer, a transparent conductive layer is arranged on the front surface of the second semiconductor layer, a second contact electrode is arranged on the transparent conductive layer, distributed Bragg reflectors are covered on the front surface of the sapphire substrate outside the buffer layer, the first semiconductor layer, the active layer, the side surfaces of the second semiconductor layer and the transparent conductive layer, part of the front surface of the transparent conductive layer and part of the low step surface of the first semiconductor layer, and a first bonding pad and a second bonding pad are arranged on the front surface of the distributed Bragg reflector, the first bonding pad is in ohmic connection with the first semiconductor layer through a first contact electrode, and the second bonding pad is in ohmic connection with the second semiconductor layer through a second contact electrode;
preferably, a first barrier protection layer is provided on a portion of the front surface of the dbr.
Preferably, a second barrier protection layer is provided on the rear surface of the dbr.
Preferably, a third barrier protection layer is arranged on part of the front surface of the first pad and part of the front surface of the second pad.
Preferably, a fourth barrier protective layer is provided on the back surface and the side surface of the sapphire substrate and the side surface of the distributed bragg reflector.
A first bonding pad and a second bonding pad are fixed on a circuit substrate through a solder ball, and a fifth barrier protective layer is arranged on the front face of the circuit substrate on the outer side of the solder ball.
A high-reliability flip-chip light-emitting diode structure is provided, wherein a buffer layer is arranged on the front surface of a sapphire substrate, a first semiconductor layer is arranged on the front surface of the buffer layer, an active layer is arranged on the front surface of the first semiconductor layer, a second semiconductor layer is arranged on the front surface of the second semiconductor layer, a transparent conductive layer is arranged on the front surface of the transparent conductive layer, a reflecting layer is arranged on the front surface of the transparent conductive layer, insulating barrier layers are covered on the front surface of the sapphire substrate, the buffer layer, the first semiconductor layer, the active layer, the second semiconductor layer and the side surfaces of the reflecting layer outside the buffer layer, a first insulating protective layer is covered on the insulating barrier layers, a second insulating protective layer is covered on the first insulating protective layer, a first contact metal and a second contact metal are arranged between the first insulating protective layer and the second insulating protective layer, and a first pad and a second pad are arranged on the front surface of the second insulating protective layer, the first bonding pad is in ohmic contact with the first semiconductor layer through first contact metal, and the second bonding pad is in ohmic contact with the second semiconductor layer through second contact metal;
preferably, a sixth barrier protective layer is provided on a part of the front surface of the second insulating protective layer.
Preferably, a seventh barrier protective layer is provided on the front surface of the insulation barrier layer.
Preferably, an eighth barrier protective layer is provided on the back surface and the side surface of the sapphire substrate and the side surface of the insulating barrier layer.
A first bonding pad and a second bonding pad are fixed on a circuit substrate through a solder ball, and a fifth barrier protective layer is arranged on the front face of the circuit substrate on the outer side of the solder ball.
The invention can improve the long-term high-temperature high-humidity aging reliability of the chip, improve the thermal diffusion of the chip and improve the high-temperature aging stability of the chip.
Drawings
Fig. 1 is a schematic structural view of embodiment 1 of the present invention.
Fig. 2 is a schematic structural diagram of embodiment 3 of the present invention.
Fig. 3 is a schematic structural diagram of embodiment 5 of the present invention.
Fig. 4 is a schematic structural diagram of embodiment 8 of the present invention.
Fig. 5 is a schematic structural view of embodiment 9 of the present invention.
Fig. 6 is a schematic structural view of embodiment 11 of the present invention.
Fig. 7 is a schematic structural view of embodiment 14 of the present invention.
Detailed Description
The present invention will be further described with reference to the following specific examples.
The following embodiments are all explained in the case of an N-P structure, in which the first contact 41 is an N contact electrode, the second contact electrode 81 is a P contact electrode, the second semiconductor layer 6 is P-GaN, the first semiconductor layer 3 is N-GaN, the buffer layer 2 is u-GaN, and the reflective layer 19 is Ag/TiW.
Example 1
A high-reliability flip-chip light emitting diode structure is disclosed, as shown in FIG. 1, a buffer layer 2 is arranged on the front surface of a sapphire substrate 1, a first semiconductor layer 3 is arranged on the front surface of the buffer layer 2, the front surface of the first semiconductor layer 3 is a step surface, a first contact electrode 41 is arranged on the front surface low step surface of the first semiconductor layer 3, an active layer 5 is arranged on the front surface high step surface of the first semiconductor layer 3, a second semiconductor layer 6 is arranged on the front surface of the active layer 5, a transparent conductive layer 7 is arranged on the front surface of the second semiconductor layer 6, a second contact electrode 81 is arranged on the transparent conductive layer 7, Bragg reflector 9 covers the front surface of the sapphire substrate 1, the buffer layer 2, the first semiconductor layer 3, the active layer 5, the side surfaces of the second semiconductor layer 6 and the transparent conductive layer 7, part of the front surface of the transparent conductive layer 7 and part of the front surface of the low step surface of the first semiconductor layer 3 outside the buffer layer 2, a first bonding pad 10 and a second bonding pad 11 are arranged on the front surface of the distributed bragg reflector 9, the first bonding pad 10 is in ohmic connection with the first semiconductor layer 3 through a first contact electrode 41, and the second bonding pad 11 is in ohmic connection with the second semiconductor layer 6 through a second contact electrode 81;
a first barrier protective layer 12 is provided on a part of the front surface of the dbr 9. The first barrier protection layer 12 can effectively inhibit the migration of active metals such as Ag and Al and the invasion of water vapor, and improve the long-term aging reliability of the flip-chip light-emitting diode.
Example 2
The first and second pads 10 and 11 of the high-reliability light-emitting diode of example 1 are fixed to the circuit board 17 by solder balls 16, and a fifth barrier protective layer 18 is provided on the front surface of the circuit board 17 outside the solder balls 16, thereby forming a high-reliability flip chip light-emitting diode package. The fifth barrier protection layer 18 can further inhibit the invasion of water vapor in the air, slow down the migration of active metals Ag and the like in the solder balls 16, and improve the long-term aging reliability of the flip-chip light-emitting diode and the packaging body.
Example 3
A flip-chip high-reliability light emitting diode structure is disclosed, as shown in FIG. 2, a buffer layer 2 is arranged on the front surface of a sapphire substrate 1, a first semiconductor layer 3 is arranged on the front surface of the buffer layer 2, the front surface of the first semiconductor layer 3 is a step surface, a first contact electrode 41 is arranged on the front surface low step surface of the first semiconductor layer 3, an active layer 5 is arranged on the front surface high step surface of the first semiconductor layer 3, a second semiconductor layer 6 is arranged on the front surface of the active layer 5, a transparent conductive layer 7 is arranged on the front surface of the second semiconductor layer 6, a second contact electrode 81 is arranged on the transparent conductive layer 7, Bragg reflector 9 covers the front surface of the sapphire substrate 1, the buffer layer 2, the first semiconductor layer 3, the active layer 5, the side surfaces of the second semiconductor layer 6 and the transparent conductive layer 7, part of the front surface of the transparent conductive layer 7 and part of the front surface of the low step surface of the first semiconductor layer 3 outside the buffer layer 2, a first bonding pad 10 and a second bonding pad 11 are arranged on the front surface of the distributed bragg reflector 9, the first bonding pad 10 is in ohmic connection with the first semiconductor layer 3 through a first contact electrode 41, and the second bonding pad 11 is in ohmic connection with the second semiconductor layer 6 through a second contact electrode 81;
a first barrier protection layer 12 is provided on a part of the front surface of the dbr 9, and a second barrier protection layer 13 is provided on the rear surface of the dbr 9. The second barrier protection layer 13 can assist the first barrier protection layer 12, further improve the ability of inhibiting the migration of active metals, and improve the long-term aging reliability of the flip-chip high-reliability light emitting diode.
Example 4
The first pads 10 and the second pads 11 in the high-reliability light-emitting diode of example 3 are fixed on the circuit substrate 17 by solder balls 16, and a fifth barrier protective layer 18 is provided on the front surface of the circuit substrate 17 outside the solder balls 16, thereby forming a high-reliability flip chip light-emitting diode package. (working principle is the same as in embodiments 2 and 3, and no further description is given)
Example 5
A high-reliability flip-chip light emitting diode structure is disclosed, as shown in FIG. 3, a buffer layer 2 is arranged on the front surface of a sapphire substrate 1, a first semiconductor layer 3 is arranged on the front surface of the buffer layer 2, the front surface of the first semiconductor layer 3 is a step surface, a first contact electrode 41 is arranged on the front surface low step surface of the first semiconductor layer 3, an active layer 5 is arranged on the front surface high step surface of the first semiconductor layer 3, a second semiconductor layer 6 is arranged on the front surface of the active layer 5, a transparent conductive layer 7 is arranged on the front surface of the second semiconductor layer 6, a second contact electrode 81 is arranged on the transparent conductive layer 7, Bragg reflector 9 covers the front surface of the sapphire substrate 1, the buffer layer 2, the first semiconductor layer 3, the active layer 5, the side surfaces of the second semiconductor layer 6 and the transparent conductive layer 7, part of the front surface of the transparent conductive layer 7 and part of the front surface of the low step surface of the first semiconductor layer 3 outside the buffer layer 2, a first bonding pad 10 and a second bonding pad 11 are arranged on the front surface of the distributed bragg reflector 9, the first bonding pad 10 is in ohmic connection with the first semiconductor layer 3 through a first contact electrode 41, and the second bonding pad 11 is in ohmic connection with the second semiconductor layer 6 through a second contact electrode 81;
a first barrier protection layer 12 is arranged on part of the front surface of the distributed bragg reflector 9, a second barrier protection layer 13 is arranged on the back surface of the distributed bragg reflector 9, a third barrier protection layer 14 is arranged on part of the front surface of the first bonding pad 10 and part of the front surface of the second bonding pad 11, a region of a solder ball 16 is exposed, and the solder ball 16 is directly arranged on the exposed regions of the first bonding pad 10 and the second bonding pad 11. The flip-chip light-emitting diode can be directly welded on a packaging substrate, the proportion of active metals in solder paste is reduced, and controllability and alignment accuracy of a welding area are higher. Meanwhile, the first barrier protection layer 12, the second barrier protection layer 13 and the third barrier protection layer 14 are combined, so that migration of active metal and moisture invasion can be further inhibited, and the reliability of the flip-chip light-emitting diode is improved.
Example 6
The first pads 10 and the second pads 11 in the high-reliability flip chip light emitting diode of example 5 were fixed on the circuit substrate 17 by the solder balls 16, the third barrier protect layer 14 was provided on the front surface of the first pads 10 outside the solder balls 16 and on the front surface of the second pads 11 outside the solder balls 16, and the fifth barrier protect layer 18 was provided on the front surface of the circuit substrate 17 outside the solder balls 16, thereby forming a high-reliability flip chip light emitting diode package. (working principle is the same as in embodiments 2 and 5, and no further description is given)
Example 7
A high-reliability flip-chip light emitting diode structure is provided, wherein a buffer layer 2 is arranged on the front surface of a sapphire substrate 1, a first semiconductor layer 3 is arranged on the front surface of the buffer layer 2, the front surface of the first semiconductor layer 3 is a step surface, a first contact electrode 41 is arranged on the front surface low step surface of the first semiconductor layer 3, an active layer 5 is arranged on the front surface high step surface of the first semiconductor layer 3, a second semiconductor layer 6 is arranged on the front surface of the active layer 5, a transparent conducting layer 7 is arranged on the front surface of the second semiconductor layer 6, a second contact electrode 81 is arranged on the transparent conducting layer 7, distributed Bragg reflectors 9 are covered on the front surface of the sapphire substrate 1, the buffer layer 2, the first semiconductor layer 3, the active layer 5, the side surfaces of the second semiconductor layer 6 and the transparent conducting layer 7, part of the front surface of the transparent conducting layer 7 and part of the front surface low step surface of the first semiconductor layer 3 outside the buffer layer 2, a first bonding pad 10 and a second bonding pad 11 are arranged on the front surface of the distributed bragg reflector 9, the first bonding pad 10 is in ohmic connection with the first semiconductor layer 3 through a first contact electrode 41, and the second bonding pad 11 is in ohmic connection with the second semiconductor layer 6 through a second contact electrode 81;
a first barrier protection layer 12 is provided on a part of the front surface of the dbr 9, a second barrier protection layer 13 is provided on the rear surface of the dbr 9, and a fourth barrier protection layer 15 is provided on the rear surface and the side surface of the sapphire substrate 1 and the side surface of the dbr 9. The fourth barrier protection layer 15 can inhibit the migration of active metal and the intrusion of moisture, thereby further improving the reliability of the flip-chip light emitting diode.
Example 8
The first pads 10 and the second pads 11 in the high-reliability flip-chip light-emitting diode of example 7 were fixed on the circuit substrate 17 by the solder balls 16, and the fifth barrier protective layer 18 was provided on the front surface of the circuit substrate 17 outside the solder balls 16, thereby forming a high-reliability flip-chip light-emitting diode package, as shown in fig. 4. The fifth barrier protection layer 18 can inhibit the migration of active metal and the intrusion of moisture in the air, thereby further improving the reliability of the flip-chip light emitting diode and the package.
Example 9
A high-reliability flip-chip light emitting diode structure is disclosed, as shown in FIG. 5, a buffer layer 2 is disposed on the front surface of a sapphire substrate 1, a first semiconductor layer 3 is disposed on the front surface of the buffer layer 2, an active layer 5 is disposed on the front surface of the first semiconductor layer 3, a second semiconductor layer 6 is disposed on the front surface of the active layer 5, a transparent conductive layer 7 is disposed on the front surface of the second semiconductor layer 6, a reflective layer 19 is disposed on the front surface of the transparent conductive layer 7, the front surface of the sapphire substrate 1 outside the buffer layer 2, the first semiconductor layer 3, the active layer 5, the second semiconductor layer 6 and the side surfaces of the reflective layer 19 are all covered with an insulating barrier layer 20, the insulating barrier layer 20 is covered with a first insulating protection layer 21, the first insulating protection layer 21 is covered with a second insulating protection layer 22, a first contact metal 42 and a second contact metal 82 are disposed between the first insulating protection layer 21 and the second insulating protection layer 22, a first bonding pad 10 and a second bonding pad 11 are arranged on the front surface of the second insulating protective layer 22, the first bonding pad 10 is in ohmic contact with the first semiconductor layer 3 through a first contact metal 42, and the second bonding pad 11 is in ohmic contact with the second semiconductor layer 6 through a second contact metal 82;
the sixth barrier protective layer 23 is disposed on a part of the front surface of the second insulating protective layer 22, so that the migration of active metals in the reflective layer 19 and the solder balls 16 can be suppressed, and the reliability of the flip-chip light emitting diode can be improved.
Example 10
The first pads 10 and the second pads 11 in the high-reliability flip-chip light-emitting diode of example 9 were fixed on the circuit substrate 17 by solder balls 16, and a fifth barrier protective layer 18 was provided on the front surface of the circuit substrate 17 outside the solder balls 16, thereby forming a high-reliability flip-chip light-emitting diode package. The fifth barrier protection layer 18 can inhibit the migration of active metal in the solder balls 16 and the intrusion of moisture in the air, thereby improving the reliability of the flip-chip light emitting diode.
Example 11
A high-reliability flip-chip light emitting diode structure is disclosed, as shown in FIG. 6, a buffer layer 2 is disposed on the front surface of a sapphire substrate 1, a first semiconductor layer 3 is disposed on the front surface of the buffer layer 2, an active layer 5 is disposed on the front surface of the first semiconductor layer 3, a second semiconductor layer 6 is disposed on the front surface of the active layer 5, a transparent conductive layer 7 is disposed on the front surface of the second semiconductor layer 6, a reflective layer 19 is disposed on the front surface of the transparent conductive layer 7, the front surface of the sapphire substrate 1 outside the buffer layer 2, the first semiconductor layer 3, the active layer 5, the second semiconductor layer 6 and the side surfaces of the reflective layer 19 are all covered with an insulating barrier layer 20, the insulating barrier layer 20 is covered with a first insulating protection layer 21, the first insulating protection layer 21 is covered with a second insulating protection layer 22, a first contact metal 42 and a second contact metal 82 are disposed between the first insulating protection layer 21 and the second insulating protection layer 22, a first bonding pad 10 and a second bonding pad 11 are arranged on the front surface of the second insulating protective layer 22, the first bonding pad 10 is in ohmic contact with the first semiconductor layer 3 through a first contact metal 42, and the second bonding pad 11 is in ohmic contact with the second semiconductor layer 6 through a second contact metal 82;
a sixth barrier protect layer 23 is provided on a part of the front surface of the second insulating protect layer 22, and a seventh barrier protect layer 24 is provided on the front surface of the insulating barrier layer 20. The seventh barrier passivation layer 24 can further inhibit the migration of active metal in the solder balls 16 and the intrusion of moisture in the air, thereby improving the reliability of the flip-chip light emitting diode.
Example 12
The first pads 10 and the second pads 11 in the high-reliability flip-chip light-emitting diode of example 11 were fixed on the circuit substrate 17 by solder balls 16, and a fifth barrier protective layer 18 was provided on the front surface of the circuit substrate 17 outside the solder balls 16, thereby forming a high-reliability flip-chip light-emitting diode package. (working principle is the same as in examples 10 and 11, and description is omitted.)
Example 13
A high-reliability flip-chip light emitting diode structure is provided, wherein a buffer layer 2 is arranged on the front surface of a sapphire substrate 1, a first semiconductor layer 3 is arranged on the front surface of the buffer layer 2, an active layer 5 is arranged on the front surface of the first semiconductor layer 3, a second semiconductor layer 6 is arranged on the front surface of the active layer 5, a transparent conductive layer 7 is arranged on the front surface of the second semiconductor layer 6, a reflecting layer 19 is arranged on the front surface of the transparent conductive layer 7, insulating barrier layers 20 are respectively covered on the front surface of the sapphire substrate 1 outside the buffer layer 2, the first semiconductor layer 3, the active layer 5, the second semiconductor layer 6 and the reflecting layer 19, a first insulating protective layer 21 is covered on the insulating barrier layers 20, a second insulating protective layer 22 is covered on the first insulating protective layer 21, a first contact metal 42 and a second contact metal 82 are arranged between the first insulating protective layer 21 and the second insulating protective layer 22, a first bonding pad 10 and a second bonding pad 11 are arranged on the front surface of the second insulating protective layer 22, the first bonding pad 10 is in ohmic contact with the first semiconductor layer 3 through a first contact metal 42, and the second bonding pad 11 is in ohmic contact with the second semiconductor layer 6 through a second contact metal 82;
a sixth barrier protective layer 23 is provided on a part of the front surface of the second insulating protective layer 22, a seventh barrier protective layer 24 is provided on the front surface of the insulating barrier layer 20, and an eighth barrier protective layer 25 is provided on the back surface and the side surface of the sapphire substrate 1 and the side surface of the insulating barrier layer 20. The eighth barrier protection layer 25 can inhibit the invasion of water vapor in the air, further slow down the migration of active metal, and improve the reliability of the flip-chip light-emitting diode.
Example 14
The first pads 10 and the second pads 11 in the high-reliability flip-chip light-emitting diode of example 13 were fixed on the circuit substrate 17 by the solder balls 16, and the fifth barrier protective layer 18 was provided on the front surface of the circuit substrate 17 outside the solder balls 16, thereby forming a high-reliability flip-chip light-emitting diode package, as shown in fig. 7. (not described in detail)
In the above embodiments, the first barrier protection layer 12, the second barrier protection layer 13, the third barrier protection layer 14, the fourth barrier protection layer 15, the fifth barrier protection layer 18, the sixth barrier protection layer 23, the seventh barrier protection layer 24, and the eighth barrier protection layer 25 may be all 1 to 10 layers of graphene, PI film (i.e., polyimide film) having a thickness of 5 to 10um, or PVDF film (i.e., polyvinylidene fluoride film) having a thickness of 5 to 10 um.
The foregoing embodiments are merely illustrative of the principles of this invention and its efficacy, rather than limiting it, and various modifications and variations can be made by those skilled in the art without departing from the spirit and scope of the invention, which is defined in the appended claims.
Claims (9)
1. A high-reliability flip-chip light-emitting diode structure is characterized in that a buffer layer (2) is arranged on the front surface of a sapphire substrate (1), a first semiconductor layer (3) is arranged on the front surface of the buffer layer (2), the front surface of the first semiconductor layer (3) is a step surface, a first contact electrode (41) is arranged on the front surface low step surface of the first semiconductor layer (3), an active layer (5) is arranged on the front surface high step surface of the first semiconductor layer (3), a second semiconductor layer (6) is arranged on the front surface of the active layer (5), a transparent conductive layer (7) is arranged on the front surface of the second semiconductor layer (6), a second contact electrode (81) is arranged on the transparent conductive layer (7), and side surfaces of the buffer layer (2), the first semiconductor layer (3), the active layer (5), the second semiconductor layer (6) and the transparent conductive layer (7) are arranged on the front surface of the sapphire substrate (1) outside the buffer layer (2), The front surface of part of the transparent conducting layer (7) and the front surface of part of the low step surface of the first semiconductor layer (3) are both covered with a distributed Bragg reflector (9), a first bonding pad (10) and a second bonding pad (11) are arranged on the front surface of the distributed Bragg reflector (9), the first bonding pad (10) is in ohmic connection with the first semiconductor layer (3) through a first contact electrode (41), and the second bonding pad (11) is in ohmic connection with the second semiconductor layer (6) through a second contact electrode (81);
the method is characterized in that: a first barrier protection layer (12) is provided on a part of the front surface of the DBR (9).
2. The high reliability flip chip led structure of claim 1, wherein: and a second barrier protection layer (13) is arranged on the back surface of the distributed Bragg reflector (9).
3. The high reliability flip chip led structure of claim 2, wherein: and a third barrier protection layer (14) is arranged on part of the front surface of the first bonding pad (10) and part of the front surface of the second bonding pad (11).
4. The high reliability flip chip led structure of claim 2, wherein: and a fourth barrier protection layer (15) is arranged on the back surface and the side surface of the sapphire substrate (1) and the side surface of the distributed Bragg reflector (9).
5. A package comprising the high reliability flip chip light emitting diode of any one of claims 1 to 4, wherein: the first bonding pad (10) and the second bonding pad (11) are fixed on the circuit substrate (17) through a solder ball (16), and a fifth barrier protection layer (18) is arranged on the front surface of the circuit substrate (17) on the outer side of the solder ball (16).
6. A high-reliability flip-chip light-emitting diode structure is characterized in that a buffer layer (2) is arranged on the front surface of a sapphire substrate (1), a first semiconductor layer (3) is arranged on the front surface of the buffer layer (2), an active layer (5) is arranged on the front surface of the first semiconductor layer (3), a second semiconductor layer (6) is arranged on the front surface of the active layer (5), a transparent conducting layer (7) is arranged on the front surface of the second semiconductor layer (6), a reflecting layer (19) is arranged on the front surface of the transparent conducting layer (7), the front surfaces of the sapphire substrate (1) on the outer side of the buffer layer (2), the first semiconductor layer (3), the active layer (5), the second semiconductor layer (6) and the reflecting layer (19) are all covered with an insulating barrier layer (20), a first insulating protective layer (21) is covered with a second insulating protective layer (22), a first contact metal (42) and a second contact metal (82) are arranged between the first insulating protective layer (21) and the second insulating protective layer (22), a first bonding pad (10) and a second bonding pad (11) are arranged on the front surface of the second insulating protective layer (22), the first bonding pad (10) is in ohmic contact with the first semiconductor layer (3) through the first contact metal (42), and the second bonding pad (11) is in ohmic contact with the second semiconductor layer (6) through the second contact metal (82);
the method is characterized in that: and a sixth barrier protection layer (23) is arranged on part of the front surface of the second insulation protection layer (22).
7. The high reliability flip chip led structure of claim 6, wherein: and a seventh barrier protection layer (24) is arranged on the front surface of the insulation barrier layer (20).
8. The high reliability flip chip led structure of claim 7, wherein: and an eighth barrier protection layer (25) is arranged on the back surface and the side surface of the sapphire substrate (1) and the side surface of the insulating barrier layer (20).
9. A package comprising the high reliability flip chip light emitting diode of any one of claims 6 to 8, wherein: the first bonding pad (10) and the second bonding pad (11) are fixed on a circuit substrate (17) through a solder ball (16), and a fifth barrier protection layer (18) is arranged on the front surface of a circuit substrate (24) on the outer side of the solder ball (16).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210108633.9A CN114497328A (en) | 2022-01-28 | 2022-01-28 | High-reliability light-emitting diode structure and packaging body |
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| CN202210108633.9A CN114497328A (en) | 2022-01-28 | 2022-01-28 | High-reliability light-emitting diode structure and packaging body |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170141260A1 (en) * | 2015-11-13 | 2017-05-18 | Epistar Corporation | Light-emitting device |
| CN106848006A (en) * | 2015-12-03 | 2017-06-13 | 映瑞光电科技(上海)有限公司 | Flip LED chips and preparation method thereof |
| KR20170076633A (en) * | 2017-06-21 | 2017-07-04 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
| CN113782649A (en) * | 2021-09-01 | 2021-12-10 | 佛山市国星半导体技术有限公司 | Flip LED chip and preparation method thereof |
-
2022
- 2022-01-28 CN CN202210108633.9A patent/CN114497328A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170141260A1 (en) * | 2015-11-13 | 2017-05-18 | Epistar Corporation | Light-emitting device |
| CN106848006A (en) * | 2015-12-03 | 2017-06-13 | 映瑞光电科技(上海)有限公司 | Flip LED chips and preparation method thereof |
| KR20170076633A (en) * | 2017-06-21 | 2017-07-04 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
| CN113782649A (en) * | 2021-09-01 | 2021-12-10 | 佛山市国星半导体技术有限公司 | Flip LED chip and preparation method thereof |
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