CN112382716A - LED light-emitting device and manufacturing method thereof - Google Patents

LED light-emitting device and manufacturing method thereof Download PDF

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Publication number
CN112382716A
CN112382716A CN202011169442.0A CN202011169442A CN112382716A CN 112382716 A CN112382716 A CN 112382716A CN 202011169442 A CN202011169442 A CN 202011169442A CN 112382716 A CN112382716 A CN 112382716A
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substrate
layer
inorganic sealing
sealing layer
led chip
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Inventor
江宾
林素慧
曾炜竣
彭康伟
曾明俊
何安和
刘小亮
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Xiamen Sanan Optoelectronics Technology Co Ltd
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Xiamen Sanan Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

The invention provides an LED light-emitting device and a manufacturing method thereof, wherein the LED light-emitting device comprises a substrate, a first light-emitting diode and a second light-emitting diode, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged, and a conducting circuit layer is arranged on the first surface; the LED chip is fixed on the first surface of the substrate through the conducting circuit layer; an inorganic sealing layer covering a surface, sidewalls of the LED chip and the first surface of the substrate. The inorganic sealing layer may be SiO2And/or HfO2And one or more oxide layers. The inorganic sealing layer has high transmittance to UV or UVC, and does not have the problems of aging, cracking and the like even under the irradiation of UV or UVC for a long time. The inorganic sealing layer is formed on the surface, the side wall and the first surface of the substrate of the LED chip simultaneously, so that the inorganic sealing layer can be formedThe LED chip and the substrate can be effectively protected at the same time.

Description

LED light-emitting device and manufacturing method thereof
Technical Field
The invention relates to the field of semiconductor devices, in particular to an LED light-emitting device and a manufacturing method thereof.
Background
LED chips are rapidly developed for their excellent performance. The ultraviolet light LED, especially the deep ultraviolet light LED, has great application value, especially in the aspect of sterilization, and has attracted people's high attention, becoming a new research hotspot.
When the UV LED is used for sterilization and disinfection, most of moisture in the use environment is severe, which puts higher requirements on the encapsulation of the UVC LED. The currently common UV LED packages mainly include the following:
1. and (4) encapsulating by using cover adhesive, wherein a mode of covering the LED chip by using silica gel is generally adopted, and the silica gel has strong absorption on emergent light of the LED in a UV wave band. Even if fluorine-containing silica gel with less absorption is adopted, alternate cracking is easy to occur under long-time UV irradiation, so that the chip is easy to lose effectiveness in reliability; 2. the quartz package mainly fixes the chip on the package support, and then covers the quartz glass on the package support to surround the LED chip, the cost of the package is high, and the bonding material at the joint of the quartz glass and the package support is easy to lose efficacy under long-time UV irradiation.
Based on many problems faced by LED packages, especially UV LED packages, there is an urgent need for a solution to the light-emitting device light-emitting efficiency and to improve the reliability of the light-emitting device.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, it is an object of the present invention to provide an LED light emitting device and a method for manufacturing the same, in which an LED chip is flip-chip mounted on a substrate, connected to a conductive wiring layer on the substrate, and then an inorganic sealing layer is formed on the surface and sidewalls of the LED chip and the surface of the substrate, the inorganic sealing layer being an inorganic insulating layerThe insulating layer can be, for example, SiO2、MgF、Al2O3And/or HfO2. This inorganic sealing layer can effectively isolated steam, can promote the light-emitting rate of LED chip simultaneously, improves the thermal diffusivity of device.
To achieve the above and other related objects, the present invention provides an LED lighting device, comprising:
the substrate is provided with a first surface and a second surface which are oppositely arranged, and a conducting circuit layer is arranged on the first surface;
the LED chip comprises a substrate, a semiconductor layer positioned on the surface of the substrate, and a first electrode and a second electrode which are connected with the semiconductor layer, wherein steps are arranged between the first electrode and the edge of the substrate and the second electrode, and the LED chip is fixed on the first surface of the substrate through the conducting circuit layer;
an inorganic sealing layer covering a surface of the LED chip, the sidewall, the surface of the step, and the first surface of the substrate.
Optionally, the inorganic sealing layer is one or more inorganic insulating layers.
Optionally, the inorganic sealing layer comprises at least one layer of hydrophobic material.
Optionally, the material of the inorganic sealing layer is SiO2、MgF、Al2O3And HfO2One or more of the above.
Optionally, the inorganic sealing layer has a thickness between
Figure BDA0002746824080000021
Optionally, the thickness of the chip is 150 μm or more, and the height of the step is 6 μm or more.
Optionally, the thickness of the substrate is more than 10 times the step height.
Optionally, the LED lighting device further includes an encapsulant, and the encapsulant is located above the protection layer and covers the inorganic sealing layer.
Optionally, the LED chip is an ultraviolet or deep ultraviolet LED chip.
The invention also provides a manufacturing method of the LED light-emitting device, which comprises the following steps:
providing a substrate, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged, and a conducting circuit layer is formed on the first surface;
manufacturing an LED chip, forming a semiconductor layer and a first electrode and a second electrode which are connected with the semiconductor layer on the surface of a substrate, wherein a step is arranged between the first electrode and the edge of the substrate and the second electrode, and the LED chip is fixed on the first surface of the substrate through the conductive circuit layer and the first electrode and the second electrode;
and forming an inorganic sealing layer on the surface, the side wall, the surface of the step and the first surface of the substrate of the LED chip.
Optionally, the forming an inorganic sealing layer on the surface of the LED chip, the sidewall, the surface of the step, and the first surface of the substrate includes: depositing at least one inorganic insulating layer on the surface of the LED chip, the side wall, the surface of the step and the first surface of the substrate.
Optionally, the inorganic sealing layer comprises at least one layer of hydrophobic material.
Optionally, the material of the inorganic sealing layer is SiO2、MgF、Al2O3And HfO2One or more of the above.
Optionally, the inorganic sealing layer has a thickness between
Figure BDA0002746824080000031
Optionally, the thickness of the chip is 150 μm or more, and the height of the step is 6 μm or more.
Optionally, the thickness of the substrate is more than 10 times the step height.
Optionally, the LED chip is an ultraviolet or deep ultraviolet LED chip with a wavelength less than 385 nm.
Optionally, the manufacturing method further includes: and coating an encapsulation colloid above the inorganic sealing layer, wherein the encapsulation colloid covers the inorganic sealing layer.
As described above, the LED light emitting device and the method for manufacturing the same according to the present invention have at least the following advantageous effects:
the LED light-emitting device of the present invention includes: the substrate is provided with a first surface and a second surface which are oppositely arranged, and a conducting circuit layer is arranged on the first surface; the LED chip comprises a substrate, a semiconductor layer positioned on the surface of the substrate, a first electrode and a second electrode which are connected with the semiconductor layer, and steps are arranged between the first electrode and the substrate and between the second electrode and the edge of the substrate. The LED chip is fixed on the first surface of the substrate through the conducting circuit layer; an inorganic sealing layer covering a surface, a sidewall, a surface of the step, and the first surface of the substrate of the LED chip. The inorganic sealing layer may be SiO2、MgF、Al2O3And HfO2And one or more inorganic insulating layers, the inorganic sealing layer preferably comprising a layer of hydrophobic material. The inorganic sealing layer has a high transmittance to UV or UVC, and is less likely to suffer from aging, cracking, and the like even under UV or UVC irradiation for a long period of time.
According to the invention, the inorganic sealing layer is formed on the surface, the side wall and the first surface of the substrate of the LED chip at the same time, so that the LED chip and the substrate can be effectively protected at the same time.
The UV LED chip, particularly the UVC LED chip, has more side light, the substrate has a coarsening phenomenon due to the hidden cutting at the periphery, the light is scattered through the coarsening position, and partial light irradiates on the substrate.
In the LED light-emitting device, the thickness of the inorganic insulating layer serving as the inorganic sealing layer is small, for example, several nanometers, and compared with a thicker colloid material, the inorganic sealing layer has better heat dissipation performance and can prolong the service life of a device.
The inorganic sealing layer can be formed by deposition, such as atomic layer deposition, chemical vapor deposition, etc., and the method can effectively control the thickness of the inorganic sealing layer and can make the inorganic sealing layer well cover the complex surface such as the step. The inorganic sealing layer formed in the way has better adhesion with the LED chip and the substrate, and can effectively prevent the peeling phenomenon in the use process of the light-emitting device. In addition, the inorganic sealing layer has higher hardness, and has better protection effect on subsequent application of the LED light-emitting device.
Above-mentioned LED illuminator can also include the packaging colloid, and the inorganic sealing layer of packaging colloid cover and parcel further increases the isolated steam of encapsulation device, prevents that the conducting wire layer on the base plate from performances such as oxidation, improves the life of device.
The method for manufacturing the LED light-emitting device has simple steps and relatively low cost.
Drawings
Fig. 1 is a schematic diagram of an LED lighting device in the prior art.
Fig. 2 is a schematic diagram of another LED lighting device in the prior art.
Fig. 3 is a schematic view illustrating an LED lighting device according to an embodiment of the present invention.
Fig. 4 is a schematic diagram illustrating an LED lighting device according to an alternative embodiment of the first embodiment of the present invention.
Fig. 5 is a schematic view illustrating an LED lighting device according to a second embodiment of the present invention.
Fig. 6 is a schematic flow chart illustrating a method for manufacturing an LED lighting device according to a third embodiment of the present invention.
Fig. 7 shows a schematic view of the structure of the provided substrate described in fig. 6.
Fig. 8 is a schematic structural diagram of the LED chip shown in fig. 6.
Fig. 9 is a schematic diagram illustrating a structure of flip-chip mounting an LED chip on a substrate.
List of reference numerals
001 Package support 103 second surface of substrate
002 LED chip 200 LED chip
0021 bond wire 201 substrate
003 encapsulant 202 first semiconductor layer
02 LED chip 203 active layer
03 glass plate 204 second semiconductor layer
04 adhesive 205 electrode contact layer
100 LED lighting device 206 first electrode
100 LED light emitting device 207 second electrode
101 substrate 208 insulating protective layer
1011 step of conductive line layer 209
1011-1 first electrode region 300 inorganic sealing layer
1011-2 second electrode region 301 first inorganic sealing layer
102 first surface 302 of the substrate and a second inorganic sealing layer
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity, position relationship and proportion of the components in actual implementation can be changed freely on the premise of implementing the technical solution of the present invention, and the layout form of the components may be more complicated.
For LED chips, especially for those with harsh operating environments such as ultraviolet and deep ultraviolet, the packaging is especially important. In the prior art, for packaging an LED chip, a quartz glass is generally covered or capped by a packaging colloid to package the LED chip.
As shown in fig. 1, which shows a packaging method in the prior art, the LED chip 002 is usually fixed on the package support 001, for example, disposed in a groove of the package support 001. Two electrodes of the LED chip 002 are respectively connected to two electrode regions of the package support 001 through a connection line 0021. Then, the surface and the periphery of the LED chip 002 are covered with the packaging colloid 003, and the packaging grooves of the packaging support are filled with the packaging colloid. The encapsulant is typically silica gel, fluorine-containing silica gel, or the like. Although the packaging colloid has low cost and simple process, the packaging colloid is easy to crack under the irradiation of ultraviolet light or deep ultraviolet light and has poor reliability. In order to prevent cracks, a packaging mode of replacing silica gel with fluororesin is adopted, however, the cost of the fluororesin is high, and the packaging structure has poor reliability after high-temperature high-humidity reverse aging is carried out under the conditions of 85 ℃ of temperature and 85% of humidity.
As shown in fig. 2, another packaging method in the prior art is shown, in which an LED chip 02 is flip-chip mounted in a groove of a package support 001, and then a glass plate 03 is covered above the package support 001, and the glass plate 03 is adhered to the package support 001 by an adhesive 04 and covers the groove of the package support, thereby completing the packaging of the LED chip. The packaging mode is high in cost and complex in process, and although the reliability is improved, the bonding material at the joint of the quartz glass and the packaging support is easy to lose efficacy under long-time UV irradiation.
Example one
Based on the defects and shortcomings of the prior art package shown in fig. 1 and 2, the present embodiment provides an LED light emitting device, as shown in fig. 3, the LED light emitting device 100 includes a substrate 101, an LED chip 200 disposed on a first surface of the substrate, and an inorganic sealing layer 300 covering the surface, sidewalls, and exposed surface of the substrate 101 of the LED chip 200.
Referring to fig. 7, the substrate 101 includes a first surface 102 and a second surface 103 disposed opposite to each other, and a conductive trace layer 1011 is formed on the first surface 101. The substrate 101 may be any suitable substrate such as a ceramic substrate or a printed circuit board. The conductive trace layer 1011 includes a first electrode region 1011-1 and a second electrode region 1011-2.
The LED chip 200 may be any type of LED chip, for example, an ultraviolet or deep ultraviolet LED chip with a wavelength less than 385nm, especially a wavelength between 220nm and 385nm, and in this embodiment, an ultraviolet LED chip with a wavelength between 220nm and 385nm is taken as an example. Referring to fig. 8, the LED chip 200 includes a substrate 201, and a front surface of the substrate 201 is formed with a semiconductor layer including a first semiconductor layer 202, an active layer 203, and a second semiconductor layer 204 sequentially formed on the front surface of the substrate 201.
In the ultraviolet LED chip, the substrate 201 may be a sapphire substrate, the first semiconductor layer 202 may be an N-type A1GaN layer, and an AlN buffer layer and an A1N/A1GaN superlattice layer (not shown in detail) may be further formed between the N-type A1GaN layer and the sapphire substrate to reduce a lattice mismatch ratio between the N-type A1GaN layer and the sapphire substrate. The active layer 203 is an AlGaN multi-quantum well layer which is arranged on one side of the N-type AlGaN layer far away from the substrate; the second semiconductor layer 204 is a P-type A1GaN layer, and the P-type AlGaN layer is disposed on a side of the AlGaN quantum well layer away from the substrate.
Referring also to fig. 8, the first semiconductor layer 202 and the second semiconductor layer 204 are respectively formed in a mesa structure, a first electrode 206 is formed over the first semiconductor layer 202, and a second electrode 207 is formed over the second semiconductor layer 204. In an alternative embodiment the first electrode 206 further comprises an electrode contact layer 205, the connection between the first electrode 206 and the first semiconductor layer 202 being realized by means of the electrode contact layer 205. The side of the second semiconductor layer 204 facing away from the substrate is typically also provided with a contact layer (not shown), such as a P-type GaN layer, connected to the P-electrode. The LED chip 200 further includes an insulating protection layer 208 that covers the first semiconductor layer 202, the second semiconductor layer 203, and exposed surfaces and sidewalls of the active layer 203.
Referring also to FIG. 8, in the Y direction shown in FIG. 8, the height difference from the surface of the substrate to the surface of the first electrode or the second electrode is generally 6 μm or more or between 6 to 15 μm. In addition, in the X direction shown in fig. 8, the edge (i.e., the sidewall) of the substrate and the edge (i.e., the sidewall) of the first electrode or the second electrode also have a distance therebetween, which is at least 10 μm. Thereby, a step 209 is formed between the first and second electrodes 206 and 207 of the LED chip 200 and the edge of the substrate 201. Specifically, the step is formed between the edge of the substrate 201 and the first semiconductor layer 202, between the first semiconductor layer and the electrode contact layer 205 of the first electrode 206, between the electrode contact layer 205 and the first electrode 206, between the first semiconductor layer 202 and the active layer 203 and the second semiconductor layer 204, and between the second semiconductor layer 204 and the second electrode 207. This step 209 forms a complex surface structure of the LED chip.
In this embodiment, the thickness of the LED chip is greater than 150 μm, for example, between 200 μm and 900 μm, and may be 250 μm, 420 μm or 700 μm. Since the light extraction efficiency of the device can be improved by increasing the thickness of the LED chip substrate, in this embodiment, the thickness of the substrate is at least 10 times the height of the step, and the thickness of the LED chip is preferably 300 μm or more.
As shown in fig. 3 and referring to fig. 9, the first electrode 206 and the second electrode 207 of the LED chip 200 are respectively connected to the first electrode area 1011-1 and the second electrode area 1011-2 of the conductive trace layer 1011 on the first surface 102 of the substrate 101, for example, by soldering, eutectic bonding, etc., thereby fixing the LED chip 200.
As shown in fig. 3, an inorganic sealing layer 300 is formed on all exposed surfaces and sidewalls of the LED chip except for the side connected to the first and second electrodes of the substrate, the surface of the step 209. For example, as shown in fig. 3, is formed on the back surface of the substrate 201, the surface and the sidewall of the insulating protective layer 208 covering the step 209 and the outside of the step 209, and the sidewalls of the first electrode 206 and the second electrode 207. While the inorganic sealing layer 300 is also formed on the exposed surface of the substrate 101 except for the region in contact with the first and second electrodes 206 and 207. For example, on the first surface of the substrate 101 outside the conductive trace layer 1011-1 and above the exposed conductive trace layer 1011-1 of the substrate 101 shown in fig. 3.
In an alternative embodiment, the inorganic sealing layer is an inorganic insulating layer, such as an oxide layer, more specifically, for example, SiO2、MgF、Al2O3And HfO2And the like in one or more combinations. As shown in fig. 3, in the present embodiment, the inorganic sealing layer is a single material layer. In order to achieve the protective effects such as hydrophobic property and sealing property of the inorganic sealing layer, Al having hydrophobic property is preferable2O3. As described above, since the step 209 forms a complex surface structure of the LED chip, the present embodiment preferably employs an Atomic Layer Deposition (ALD) method to deposit Al on the surface, the sidewall, the surface of the step and the first surface of the substrate of the LED chip2O3Ensure Al2O3The surface can be effectively and comprehensively covered, water vapor is effectively prevented from entering the LED chip, and the failure of a device is prevented. The inorganic sealing layer has a thickness of
Figure BDA0002746824080000071
The inorganic sealing layer may be formed to a thickness of several tens to several hundreds of angstroms by using an atomic layer deposition method.
In another optional embodiment of this embodiment, the inorganic sealing layer is a plurality of inorganic insulating layers. As shown in fig. 4, in this alternative embodiment, two inorganic sealing layers are exemplified for explanation. The inorganic sealing layer includes a first inorganic sealing layer 301 and a second inorganic sealing layer 302. Alternatively, the first inorganic sealing layer 301 may be made of SiO2、MgF、Al2O3And HfO2Any one of the above materials. With SiO2For example, atomic layer deposition (atomic layer deposition) is also preferredALD) method of depositing SiO on the surface, the sidewall, the surface of the step and the first surface of the substrate of the LED chip2Ensure SiO2Effectively and cover above-mentioned surface comprehensively, effectively prevent steam entering LED chip. A second inorganic sealing layer 302 is then deposited over the first inorganic sealing layer 301, the second inorganic sealing layer 302 likewise being made of SiO2、MgF、Al2O3And HfO2And the second inorganic sealing layer may be the same material layer as the first inorganic sealing layer or a different material layer. In this embodiment, the second inorganic sealing layer and the first inorganic sealing layer are different material layers, for example, the second inorganic sealing layer is made of MgF, Al2O3And HfO2Any one of the above. Taking MgF as an example, Chemical Vapor Deposition (CVD) is used to deposit MgF over the first inorganic sealing layer 301. The thickness of the second inorganic sealing layer deposited by CVD is greater than the thickness of the first inorganic sealing layer.
In an alternative embodiment, if the substrate thickness is greater than 300 μm, a second inorganic sealing layer (not shown in detail) may be formed on the sidewalls of the substrate at the same time as the second inorganic sealing layer is deposited by CVD, whereby the device may be better protected from moisture.
The inorganic sealing layer 300 may be formed on the surface of the LED chip, the sidewall, the surface of the step, and the surface of the substrate through a deposition process. The forming of the layered inorganic sealing layer is similar to the forming of the insulating protective layer of the LED chip, and the process is simple and easy to realize. The inorganic sealing layer formed by deposition has good bonding force with the substrate and the LED chip, and the reliability is good. The inorganic sealing layer is an inorganic insulating layer, such as an inorganic oxide layer, and has relatively high hardness, so that the LED chip can be better protected in subsequent applications.
In addition, when the conventional package is made of resin or silicone, the thickness of the resin or silicone is usually large, for example, about 0.15mm, in order to protect the chip effectively. For ultraviolet or deep ultraviolet LED chips, the thickness makes the quantum efficiency of ultraviolet or deep ultraviolet lower, causes the device poor heat dissipation, is easy to damage, and resin or silica gel is easy to crack and age under the irradiation of long-time ultraviolet or deep ultraviolet, and affects the performance of the device. While the thickness of the inorganic sealing layer 300 is easily controlled, it is generally formed to a thickness of the order of nanometers, for example, several tens of nanometers to several hundreds or thousands of nanometers. The thinner inorganic sealing layer is beneficial to the heat dissipation of the chip and prolongs the service life of the device. Meanwhile, the oxide layer has high transmittance to UV or UVC, and has no cracking or aging problem even under the irradiation of the UV or UVC for a long time.
In the prior art, an organic coating is coated on a substrate to prevent reflection metal (Al/Ag) from being oxidized or isolate moisture, and the coating can strongly absorb UV (ultraviolet) light, particularly UVC (ultraviolet) light, so that the light-emitting rate of a device is seriously influenced. The inorganic sealing layer of the embodiment is directly deposited on the substrate, so that the conductive circuit (metal) layer on the substrate can be effectively protected (moisture and oxidation are isolated), and the inorganic sealing layer has high transmittance to UV and UVC, can reduce the absorption of the substrate to light, and improves the brightness of the device.
Example two
The present embodiment also provides an LED lighting device, and the same parts as those in the first embodiment are not described again, except that:
as shown in fig. 5, the LED light emitting device 100' of the present embodiment includes, in addition to the substrate 101, the LED chip 200 disposed on the first surface of the substrate, and the inorganic sealing layer 300 covering the surface, the sidewalls and the exposed surface of the substrate 101 of the LED chip 200, an encapsulant 400 disposed over the inorganic sealing layer 300. The encapsulant 400 is formed on the substrate 101 while wrapping the inorganic sealing layer. The encapsulant 400 may be a fluorine-containing resin. The fluorine-containing resin type packaging colloid can prevent the colloid from cracking and further protect the LED chip.
EXAMPLE III
The present embodiment provides a method for manufacturing an LED light-emitting device, as shown in fig. 6, the method including the steps of:
s100: providing a substrate, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged, and a conducting circuit layer is formed on the first surface;
as shown in fig. 7, the substrate 101 in this embodiment includes a first surface 102 and a second surface 103 disposed opposite to each other, and a conductive trace layer 1011 is formed on the first surface 101. The substrate 101 may be any suitable substrate such as a ceramic substrate or a printed circuit board. The conductive trace layer 1011 includes a first electrode region 1011-1 and a second electrode region 1011-2.
S200: providing an LED chip, and fixing the LED chip on the first surface of the substrate through the conducting circuit layer;
the LED chip 200 may be any type of LED chip, for example, an ultraviolet or deep ultraviolet LED chip with a wavelength less than 385nm, especially a wavelength between 220nm and 385nm, in this embodiment, an ultraviolet LED chip with a wavelength between 220nm and 385nm is taken as an example. As shown in fig. 8, the LED chip 200 includes a substrate 201, and a semiconductor layer is formed on a front surface of the substrate 201, and the semiconductor layer includes a first semiconductor layer 202, an active layer 203, and a second semiconductor layer 204 sequentially formed on the front surface of the substrate 201.
In the ultraviolet LED chip, the substrate 201 may be a sapphire substrate, the first semiconductor layer 202 may be an N-type A1GaN layer, and an AlN buffer layer and an A1N/A1GaN superlattice layer (not shown in detail) may be further formed between the N-type A1GaN layer and the sapphire substrate to reduce a lattice mismatch ratio between the N-type A1GaN layer and the sapphire substrate. The active layer is an AlGaN multi-quantum well layer, and the AlGaN multi-quantum well layer is arranged on one side, far away from the substrate, of the N-type AlGaN layer; the second semiconductor layer is a P-type A1GaN layer, and the P-type AlGaN layer is arranged on one side, away from the substrate, of the AlGaN quantum well layer. Referring also to fig. 8, the first semiconductor layer 202 and the second semiconductor layer 204 are respectively formed in a mesa structure, a first electrode 206 is formed over the first semiconductor layer 202, and a second electrode 207 is formed over the second semiconductor layer 204. In an alternative embodiment the first electrode 206 further comprises an electrode contact layer 205, the connection between the first electrode 206 and the first semiconductor layer 202 being realized by means of the electrode contact layer 205. The side of the second semiconductor layer 204 facing away from the substrate is typically also provided with a contact layer (not shown), such as a P-type GaN layer, connected to the P-electrode. The LED chip 200 further includes an insulating protection layer 208 that covers the first semiconductor layer 202, the second semiconductor layer 203, and exposed surfaces and sidewalls of the active layer 203.
Referring also to FIG. 8, in the Y direction shown in FIG. 8, the height difference from the surface of the substrate to the surface of the first electrode or the second electrode is generally 6 μm or more or between 6 to 15 μm. In addition, in the X direction shown in fig. 8, the edge (i.e., the sidewall) of the substrate and the edge (i.e., the sidewall) of the first electrode or the second electrode also have a distance therebetween, which is at least 10 μm. Thereby, a step 209 is formed between the first and second electrodes 206 and 207 of the LED chip 200 and the edge of the substrate 201. Specifically, the step is formed between the edge of the substrate 201 and the first semiconductor layer 202, between the first semiconductor layer and the electrode contact layer 205 of the first electrode 206, between the electrode contact layer 205 and the first electrode 206, between the first semiconductor layer 202 and the active layer 203 and the second semiconductor layer 204, and between the second semiconductor layer 204 and the second electrode 207. This step 209 forms a complex surface structure of the LED chip.
In this embodiment, the thickness of the LED chip is greater than 150 μm, for example, between 200 μm and 900 μm, and may be 250 μm, 420 μm or 700 μm. Since the light extraction efficiency of the device can be improved by increasing the thickness of the LED chip substrate, in this embodiment, the thickness of the substrate is at least 10 times the height of the step, and the thickness of the LED chip is preferably 300 μm or more.
As shown in fig. 9, the first electrode 206 and the second electrode 207 of the LED chip 200 are respectively connected to the first electrode region 1011-1 and the second electrode region 1011-2 of the conductive trace layer 1011 on the first surface 102 of the substrate 101, for example, by soldering, eutectic bonding, etc., so as to fix the LED chip 200.
S300: and forming an inorganic sealing layer on the surface, the side wall and the first surface of the substrate of the LED chip. The inorganic sealing layer is formed by deposition, such as CVD, sputtering, evaporation, atomic layer deposition, and the like.
As shown in fig. 3, an inorganic sealing layer 300 is formed on all exposed surfaces and sidewalls of the LED chip except for the side connected to the first and second electrodes of the substrate, the surface of the step 209. For example, as shown in fig. 3, is formed on the back surface of the substrate 201, the surface and the sidewall of the insulating protective layer 208 covering the step 209 and the outside of the step 209, and the sidewalls of the first electrode 206 and the second electrode 207. While the inorganic sealing layer 300 is also formed on the exposed surface of the substrate 101 except for the region in contact with the first and second electrodes 206 and 207. For example, on the first surface of the substrate 101 outside the conductive trace layer 1011-1 and above the exposed conductive trace layer 1011-1 of the substrate 101 shown in fig. 3.
In an alternative embodiment, the inorganic sealing layer is an inorganic insulating layer, such as an oxide layer, more specifically, for example, SiO2、MgF、Al2O3And HfO2And the like in one or more combinations. As shown in fig. 3, in the present embodiment, the inorganic sealing layer is a single material layer. In order to achieve the protective effects such as hydrophobic property and sealing property of the inorganic sealing layer, Al having hydrophobic property is preferable2O3. As described above, a complicated surface structure of the LED chip is formed due to the step 209. In this embodiment, an Atomic Layer Deposition (ALD) method is preferably adopted to deposit Al on the surface, the sidewall, the surface of the step and the first surface of the substrate of the LED chip2O3Ensure Al2O3The surface can be effectively and comprehensively covered, water vapor is effectively prevented from entering the LED chip, and the failure of a device is prevented. The inorganic sealing layer has a thickness of
Figure BDA0002746824080000111
The inorganic sealing layer may be formed to a thickness of several tens to several hundreds of angstroms by an atomic layer deposition method.
In another optional embodiment of this embodiment, the inorganic sealing layer is a plurality of inorganic insulating layers. As shown in fig. 4, in this alternative embodiment, toTwo inorganic sealing layers are exemplified for illustration. The inorganic sealing layer includes a first inorganic sealing layer 301 and a second inorganic sealing layer 302. Alternatively, the first inorganic sealing layer 301 may be made of SiO2、MgF、Al2O3And HfO2Any one of the above materials. With SiO2For example, it is also preferable to deposit SiO on the surface, the sidewall, the surface of the step and the first surface of the substrate of the LED chip by using an Atomic Layer Deposition (ALD) method2Ensure SiO2Effectively and cover above-mentioned surface comprehensively, effectively prevent steam entering LED chip. A second inorganic sealing layer 302 is then deposited over the first inorganic sealing layer 301, the second inorganic sealing layer 302 likewise being made of SiO2、MgF、Al2O3And HfO2And the second inorganic sealing layer may be the same material layer as the first inorganic sealing layer or a different material layer. In this embodiment, the second inorganic sealing layer and the first inorganic sealing layer are different material layers, for example, the second inorganic sealing layer is made of MgF, Al2O3And HfO2Any one of the above. Taking MgF as an example, Chemical Vapor Deposition (CVD) is used to deposit MgF over the first inorganic sealing layer 301. The thickness of the second inorganic sealing layer deposited by CVD is greater than the thickness of the first inorganic sealing layer.
The inorganic sealing layer 300 may be formed on the surface of the LED chip, the surface of the sidewall step, and the surface of the substrate through a deposition process. The forming of the layered inorganic sealing layer is similar to the forming of the insulating protective layer of the LED chip, and the process is simple and easy to realize. The inorganic sealing layer formed by deposition has good bonding force with the substrate and the LED chip, and the reliability is good. The inorganic sealing layer is an inorganic insulating layer, such as an inorganic oxide layer, and has relatively high hardness, so that the LED chip can be better protected in subsequent applications.
In addition, when the conventional package is made of resin or silicone, the thickness of the resin or silicone is usually large, for example, about 0.15mm, in order to protect the chip effectively. For ultraviolet or deep ultraviolet LED chips, the thickness makes the quantum efficiency of ultraviolet or deep ultraviolet lower, causes the device poor heat dissipation, is easy to damage, and resin or silica gel is easy to crack and age under the irradiation of long-time ultraviolet or deep ultraviolet, and affects the performance of the device. While the thickness of the inorganic sealing layer 300 is easily controlled, it is generally formed to a thickness of the order of nanometers, for example, several tens of nanometers to several hundreds or thousands of nanometers. The thinner inorganic sealing layer is beneficial to the heat dissipation of the chip and prolongs the service life of the device. Meanwhile, the oxide layer has high transmittance to UV or UVC, and has no cracking or aging problem even under the irradiation of the UV or UVC for a long time.
In the prior art, an organic coating is coated on the substrate to prevent reflection metal (Al/Ag) from being oxidized or isolate moisture, and the coating can strongly absorb UV (ultraviolet) light, particularly UVC (ultraviolet) light, so that the light extraction rate of a device is seriously influenced. The inorganic sealing layer of the embodiment is directly deposited on the substrate, so that the conductive circuit (metal) layer on the substrate can be effectively protected (moisture and oxidation are isolated), and the inorganic sealing layer has high transmittance to UV and UVC, can reduce the absorption of the substrate to light, and improves the brightness of the device.
In an alternative embodiment, after the inorganic sealing layer is formed, a step of forming an encapsulant over the inorganic sealing layer is further included. Referring also to fig. 5, the encapsulant 400 is formed on the substrate 101 while wrapping the inorganic sealing layer. The encapsulant 400 may be a fluorine-containing resin. The fluorine-containing resin type packaging colloid can prevent the colloid from cracking and further protect the LED chip.
As described above, the LED light emitting device and the method for manufacturing the same according to the present invention have at least the following advantageous effects:
the LED light-emitting device of the present invention includes: the substrate is provided with a first surface and a second surface which are oppositely arranged, and a conducting circuit layer is arranged on the first surface; the LED chip comprises a substrate, a semiconductor layer on the surface of the substrate, and a semiconductor layerThe semiconductor layer is connected with a first electrode and a second electrode, and a step is arranged between the first electrode and the second electrode and the edge of the substrate. The LED chip is fixed on the first surface of the substrate through the conducting circuit layer; an inorganic sealing layer covering a surface, a sidewall, a surface of the step, and the first surface of the substrate of the LED chip. The inorganic sealing layer may be SiO2、MgF、Al2O3And HfO2One or more inorganic insulating layers and the inorganic sealing layer comprises at least one layer of hydrophobic material. The inorganic sealing layer has high transmittance to UV or UVC, and does not have the problems of aging, cracking and the like even under the irradiation of UV or UVC for a long time.
According to the invention, the inorganic sealing layer is formed on the surface, the side wall and the first surface of the substrate of the LED chip at the same time, so that the LED chip and the substrate can be effectively protected at the same time.
The inorganic sealing layer in the LED light-emitting device can protect a conductive circuit layer on the substrate (isolate moisture and prevent oxidation), has high transmittance for UV and UVC, can effectively reduce absorption of the substrate, and improves the brightness of a device.
In the LED light-emitting device, the thickness of the inorganic insulating layer serving as the inorganic sealing layer is small, for example, several nanometers, and compared with a thicker colloid material, the inorganic sealing layer has better heat dissipation performance and can prolong the service life of a device.
The inorganic sealing layer can be formed by deposition, such as atomic layer deposition, chemical vapor deposition, etc., and the method can effectively control the thickness of the inorganic sealing layer and can make the inorganic sealing layer well cover the complex surface such as the step. The inorganic sealing layer formed in the way has better adhesion with the LED chip and the substrate, and can effectively prevent the peeling phenomenon in the use process of the light-emitting device. In addition, the inorganic sealing layer has higher hardness, and has better protection effect on subsequent application of the LED light-emitting device.
Above-mentioned LED illuminator can also include the packaging colloid, and the inorganic sealing layer of packaging colloid cover and parcel further increases the isolated steam of encapsulation device, prevents that the conducting wire layer on the base plate from performances such as oxidation, improves the life of device.
The method for manufacturing the LED light-emitting device is simple in steps and relatively low in cost.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (18)

1. An LED lighting device, comprising:
the substrate is provided with a first surface and a second surface which are oppositely arranged, and a conducting circuit layer is arranged on the first surface;
the LED chip comprises a substrate, a semiconductor layer positioned on the surface of the substrate, and a first electrode and a second electrode which are connected with the semiconductor layer, wherein steps are arranged between the first electrode and the edge of the substrate and the second electrode, and the LED chip is fixed on the first surface of the substrate through the conducting circuit layer;
an inorganic sealing layer covering a surface of the LED chip, the sidewall, the surface of the step, and the first surface of the substrate.
2. The LED lighting device of claim 1, wherein the inorganic sealing layer is one or more inorganic insulating layers.
3. The LED lighting device of claim 1, wherein said inorganic sealing layer comprises at least one layer of hydrophobic material.
4. The LED lighting device according to claim 1, wherein the material of the inorganic sealing layer is SiO2、MgF、Al2O3And HfO2One or more of the above.
5. The LED lighting device according to claim 1, wherein the inorganic sealing layer has a thickness between that of the inorganic sealing layer
Figure FDA0002746824070000012
Figure FDA0002746824070000011
6. The LED light-emitting device according to claim 1, wherein the thickness of the chip is 150 μm or more, and the height of the step is 6 μm or more.
7. The LED luminescent device according to claim 1, wherein the thickness of the substrate is 10 times or more the step height.
8. The LED light-emitting device according to any one of claims 1 to 7, further comprising an encapsulant covering the inorganic sealing layer above the protective layer.
9. The LED light-emitting device according to any one of claims 1 to 7, wherein the LED chip is an ultraviolet or deep ultraviolet LED chip with a wavelength of less than 385 nm.
10. A method for manufacturing an LED light-emitting device is characterized by comprising the following steps:
providing a substrate, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged, and a conducting circuit layer is formed on the first surface;
manufacturing an LED chip, forming a semiconductor layer and a first electrode and a second electrode which are connected with the semiconductor layer on the surface of a substrate, wherein a step is arranged between the first electrode and the edge of the substrate and the second electrode, and the LED chip is fixed on the first surface of the substrate through the conductive circuit layer and the first electrode and the second electrode;
and forming an inorganic sealing layer on the surface, the side wall, the surface of the step and the first surface of the substrate of the LED chip.
11. The manufacturing method according to claim 10, wherein forming an inorganic sealing layer on a surface of the LED chip, a sidewall, a surface of the step, and the first surface of the substrate comprises: and depositing at least one inorganic insulating layer on the surface, the side wall, the surface of the step and the first surface of the substrate of the LED chip.
12. The manufacturing method according to claim 10, wherein the inorganic sealing layer contains at least one layer of a hydrophobic material.
13. The production method according to claim 10, wherein the material of the inorganic sealing layer is SiO2、MgF、Al2O3And HfO2One or more of the above.
14. The method of claim 10, wherein the inorganic sealing layer has a thickness between that of the inorganic sealing layer
Figure FDA0002746824070000021
Figure FDA0002746824070000022
15. The manufacturing method according to claim 10, wherein the thickness of the chip is 150 μm or more, and the height of the step is 6 μm or more.
16. The manufacturing method according to claim 10, wherein a thickness of the substrate is 10 times or more of the step height.
17. The method of manufacturing according to claim 10, wherein the LED chip is an ultraviolet or deep ultraviolet LED chip having a wavelength of less than 385 nm.
18. The manufacturing method according to any one of claims 10 to 17, further comprising: and coating an encapsulation colloid above the inorganic sealing layer, wherein the encapsulation colloid covers the inorganic sealing layer.
CN202011169442.0A 2020-10-28 2020-10-28 LED light-emitting device and manufacturing method thereof Pending CN112382716A (en)

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CN113555483A (en) * 2021-06-04 2021-10-26 东莞市中麒光电技术有限公司 LED packaging body, display module and manufacturing method

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CN111033769A (en) * 2017-09-08 2020-04-17 道康宁东丽株式会社 Method for producing sealed optical semiconductor device
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CN113284999A (en) * 2021-03-29 2021-08-20 华灿光电(苏州）有限公司 Light emitting diode chip and preparation method thereof
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