CN114488709B - 曝光装置和制造物品的方法 - Google Patents

曝光装置和制造物品的方法 Download PDF

Info

Publication number
CN114488709B
CN114488709B CN202210113165.4A CN202210113165A CN114488709B CN 114488709 B CN114488709 B CN 114488709B CN 202210113165 A CN202210113165 A CN 202210113165A CN 114488709 B CN114488709 B CN 114488709B
Authority
CN
China
Prior art keywords
mark
substrate
resist film
exposure
marks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202210113165.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN114488709A (zh
Inventor
松田丰
玉置公寿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to CN202210113165.4A priority Critical patent/CN114488709B/zh
Publication of CN114488709A publication Critical patent/CN114488709A/zh
Application granted granted Critical
Publication of CN114488709B publication Critical patent/CN114488709B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70675—Latent image, i.e. measuring the image of the exposed resist prior to development
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70766—Reaction force control means, e.g. countermass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0614—Marking devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
CN202210113165.4A 2018-04-03 2019-04-03 曝光装置和制造物品的方法 Active CN114488709B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210113165.4A CN114488709B (zh) 2018-04-03 2019-04-03 曝光装置和制造物品的方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018-071919 2018-04-03
JP2018071919A JP6814174B2 (ja) 2018-04-03 2018-04-03 露光装置、物品の製造方法、マーク形成装置及びマーク形成方法
CN201910263549.2A CN110347015B (zh) 2018-04-03 2019-04-03 曝光装置和制造物品的方法
CN202210113165.4A CN114488709B (zh) 2018-04-03 2019-04-03 曝光装置和制造物品的方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201910263549.2A Division CN110347015B (zh) 2018-04-03 2019-04-03 曝光装置和制造物品的方法

Publications (2)

Publication Number Publication Date
CN114488709A CN114488709A (zh) 2022-05-13
CN114488709B true CN114488709B (zh) 2024-08-27

Family

ID=68057017

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202210113165.4A Active CN114488709B (zh) 2018-04-03 2019-04-03 曝光装置和制造物品的方法
CN201910263549.2A Active CN110347015B (zh) 2018-04-03 2019-04-03 曝光装置和制造物品的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201910263549.2A Active CN110347015B (zh) 2018-04-03 2019-04-03 曝光装置和制造物品的方法

Country Status (5)

Country Link
US (1) US11187993B2 (https=)
JP (1) JP6814174B2 (https=)
KR (1) KR102520399B1 (https=)
CN (2) CN114488709B (https=)
TW (1) TWI726294B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7426845B2 (ja) * 2020-02-14 2024-02-02 キヤノン株式会社 計測方法、露光方法、物品の製造方法、プログラム及び露光装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW587200B (en) * 2002-10-24 2004-05-11 Taiwan Semiconductor Mfg Method for improving intrafield overlay accuracy
CN101685254A (zh) * 2008-09-28 2010-03-31 Hoya株式会社 光掩模制造方法以及光掩模

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11307449A (ja) * 1998-02-20 1999-11-05 Canon Inc 露光装置及びデバイスの製造方法
JP4618859B2 (ja) 2000-10-10 2011-01-26 東レエンジニアリング株式会社 積層ウエハーのアライメント方法
US6678038B2 (en) 2001-08-03 2004-01-13 Nikon Corporation Apparatus and methods for detecting tool-induced shift in microlithography apparatus
US6838217B1 (en) 2002-06-06 2005-01-04 Taiwan Semiconductor Manufacturing Company Define overlay dummy pattern in mark shielding region to reduce wafer scale error caused by metal deposition
US7256865B2 (en) * 2003-10-24 2007-08-14 Asml Holding N.V. Methods and apparatuses for applying wafer-alignment marks
US7906270B2 (en) * 2005-03-23 2011-03-15 Asml Netherlands B.V. Reduced pitch multiple exposure process
US7981595B2 (en) * 2005-03-23 2011-07-19 Asml Netherlands B.V. Reduced pitch multiple exposure process
WO2008071296A1 (en) 2006-12-15 2008-06-19 Carl Zeiss Sms Gmbh Method and apparatus for determining the position of a structure on a carrier relative to a reference point of the carrier
SG153748A1 (en) * 2007-12-17 2009-07-29 Asml Holding Nv Lithographic method and apparatus
US20100063764A1 (en) * 2008-09-10 2010-03-11 Limin Lou Use of different pairs of overlay layers to check an overlay measurement recipe
JP2010267931A (ja) * 2009-05-18 2010-11-25 Toshiba Corp パターン形成方法およびパターン設計方法
WO2013031863A1 (ja) * 2011-09-01 2013-03-07 旭硝子株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、及び反射型マスクブランクの品質管理方法
US8889434B2 (en) * 2012-12-17 2014-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. Scanner overlay correction system and method
US9442392B2 (en) * 2012-12-17 2016-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Scanner overlay correction system and method
WO2016037003A1 (en) * 2014-09-03 2016-03-10 Kla-Tencor Corporation Optimizing the utilization of metrology tools
CN105573068B (zh) 2014-10-10 2019-11-05 中芯国际集成电路制造(上海)有限公司 光刻胶去除方法和光刻工艺的返工方法
EP3447580A1 (en) * 2017-08-21 2019-02-27 ASML Netherlands B.V. Method of calibrating focus measurements, measurement method and metrology apparatus, lithographic system and device manufacturing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW587200B (en) * 2002-10-24 2004-05-11 Taiwan Semiconductor Mfg Method for improving intrafield overlay accuracy
CN101685254A (zh) * 2008-09-28 2010-03-31 Hoya株式会社 光掩模制造方法以及光掩模

Also Published As

Publication number Publication date
KR102520399B1 (ko) 2023-04-12
US11187993B2 (en) 2021-11-30
TW201942685A (zh) 2019-11-01
JP2019184681A (ja) 2019-10-24
US20190302630A1 (en) 2019-10-03
KR20190116071A (ko) 2019-10-14
TWI726294B (zh) 2021-05-01
CN110347015B (zh) 2022-02-18
JP6814174B2 (ja) 2021-01-13
CN110347015A (zh) 2019-10-18
CN114488709A (zh) 2022-05-13

Similar Documents

Publication Publication Date Title
CN108073048B (zh) 曝光装置、曝光方法和物品的制造方法
KR102396139B1 (ko) 리소그래피 장치, 리소그래피 방법, 결정 방법, 프로그램 및 물품 제조 방법
TWI888752B (zh) 獲得基板上的多個照射區域的陣列的方法、曝光方法、曝光設備、物品的製造方法、非暫態性電腦可讀儲存媒體及資訊處理設備
TW202238288A (zh) 檢測裝置、檢測方法、曝光裝置、曝光系統及物品製造方法
KR102566155B1 (ko) 패턴 형성 방법, 리소그래피 장치, 및 물품 제조 방법
CN114488709B (zh) 曝光装置和制造物品的方法
KR20230088255A (ko) 계측 장치, 리소그래피 장치, 및 물품 제조 방법
KR102907522B1 (ko) 처리 장치, 계측 장치, 리소그래피 장치, 물품을 제조하는 방법, 모델, 처리 방법, 계측 방법, 생성 방법, 및 생성 장치
KR20240133590A (ko) 기판상의 복수의 영역의 배열을 구하는 방법, 노광 방법, 노광 장치, 물품의 제조 방법, 비일시적 컴퓨터 판독 가능 기억매체 및 정보처리장치
TWI892353B (zh) 製造半導體元件的方法
KR20260016419A (ko) 기판 상의 복수의 영역의 각각의 위치를 구하기 위한 방법, 정보 처리장치, 노광 방법, 노광 장치, 물품의 제조 방법, 결정 방법 및 프로그램
KR20250119414A (ko) 계측방법, 위치맞춤방법, 처리방법, 처리장치, 물품의 제조방법, 결정방법 및 프로그램
KR20260056043A (ko) 노광장치, 물품 제조방법, 및 제어방법
KR20210001968A (ko) 패턴 형성 방법 및 물품의 제조 방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant