CN114468387A - Silicon-based atomizing core and manufacturing method thereof - Google Patents
Silicon-based atomizing core and manufacturing method thereof Download PDFInfo
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- CN114468387A CN114468387A CN202111665441.XA CN202111665441A CN114468387A CN 114468387 A CN114468387 A CN 114468387A CN 202111665441 A CN202111665441 A CN 202111665441A CN 114468387 A CN114468387 A CN 114468387A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 77
- 239000010703 silicon Substances 0.000 title claims abstract description 77
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000011148 porous material Substances 0.000 claims abstract description 135
- 238000010438 heat treatment Methods 0.000 claims abstract description 34
- 238000002161 passivation Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 238000009623 Bosch process Methods 0.000 claims description 11
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000011161 development Methods 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 17
- 238000000889 atomisation Methods 0.000 abstract description 16
- 239000000919 ceramic Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 9
- 239000011162 core material Substances 0.000 description 44
- 239000007788 liquid Substances 0.000 description 13
- 239000003921 oil Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003571 electronic cigarette Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- A—HUMAN NECESSITIES
- A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
- A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
- A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
- A24F40/40—Constructional details, e.g. connection of cartridges and battery parts
- A24F40/46—Shape or structure of electric heating means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
- B81B1/002—Holes characterised by their shape, in either longitudinal or sectional plane
- B81B1/004—Through-holes, i.e. extending from one face to the other face of the wafer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Abstract
The invention discloses a silicon-based atomization core and a manufacturing method thereof, wherein the silicon-based atomization core comprises one or more first pore passages and one or more second pore passages which are formed by extending from a first surface and a second surface respectively and are mutually communicated, the position of one second pore passage corresponds to that of at least one first pore passage, the pore diameter of the first pore passage is smaller than that of the second pore passage, the surface of the second pore passage is provided with at least one step structure connected with the surface of the first pore passage closest to the second pore passage, the surfaces of the first surface, the second surface, the first pore passage and the second pore passage are provided with passivation layers, and the passivation layers of the surfaces of the first surface and the first pore passage are provided with heating layers. Therefore compare in ceramic base or glass base atomizing core, the silicon base atomizing core of this application has better atomizing effect, higher reliability and lower cost.
Description
Technical Field
The invention relates to the field of atomizers, in particular to a silicon-based atomizing core and a manufacturing method thereof.
Background
The atomizer is a device for heating stored and atomized substances (e.g. electronic cigarette oil) to form an atomized state, and in recent years, the development of electronic atomizers and atomizing cores has been receiving more and more attention.
The atomizing core material of atomizer in the current market is mainly ceramic structure material, and the following problem point can exist in ceramic atomizing core in use:
1. the sintering structure is easy to separate out particulate matters and heavy metals at high temperature, so that the health of a human body is influenced;
2. the consistency of the ceramic micropores cannot be controlled, and the atomization uniformity is not good;
3. the whole volume is large, and the occupied space is large;
4. the manufacturing process is traditional, the batch production flow is complex, and the cost is high;
5. in the long-time use process, the material can carbonize and cause the core to be burnt, and then influences the atomization effect.
Although related enterprises have developed glass substrate atomizing cores, quartz glass is selected, and a semiconductor processing technology is adopted, specifically, pulse laser is used for inducing glass to generate a continuous variable region, compared with glass in an undenatured region, the variable glass is etched in an etching solution at a higher speed, and through holes can be manufactured on the glass based on the phenomenon. The German LPKF company takes the lead to use the technology to realize the preparation of the glass through hole, and the method of the company comprises two steps: firstly, generating a denatured area on glass by using picosecond laser; and secondly, placing the glass treated by the laser into a hydrofluoric acid solution for etching. However, the material structure also has the following problems:
1. the glass through holes are vertical, atomized liquid is not easy to store and lock in the atomization core, and when the atomization core is heated and atomized, the atomized liquid cannot be effectively supplied in time, so that the core is burnt dry;
2. due to the particularity of the punching process, the glass through hole structure can only be sequentially operated in a single hole, particularly, the size of the base material is increased from 4 inches to 6 inches to 8 inches, 12 inches or larger size round sheets or square plates, so that the large-scale production is not facilitated, and the process cost is high;
3. the glass substrates used are relatively costly.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a silicon-based atomizing core and a manufacturing method thereof.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a silicon-based atomizing core comprises a silicon substrate, wherein the silicon substrate comprises a first surface and a second surface which are opposite to each other, at least part of the first surface is used for forming an atomizing surface of the silicon-based atomizing core, at least part of the second surface is used for forming an oil absorption surface of the silicon-based atomizing core, one or more first pore passages formed by extending from the first surface and one or more second pore passages formed by extending from the second surface are arranged on the silicon substrate, one second pore passage corresponds to at least one first pore passage in position and is communicated with the at least one first pore passage, the pore diameter of the first pore passage is smaller than that of the second pore passage, at least one step structure connected with the surface of the first pore passage closest to the second pore passage is arranged on the surface of the second pore passage, and passivation layers are arranged on the surfaces of the first surface, the second surface, the first pore passage and the second pore passages, and a heating layer is arranged on the passivation layer of part of the first surface or at least part of the first surface and the surface of the first pore channel.
In some embodiments, the length of the first aperture is less than the length of the second aperture.
In some embodiments, the first channels have a pore size in a range of 2 microns to 50 microns and the second channels have a pore size in a range of 20 microns to 10 millimeters.
In some embodiments, the highest step face of the step structure is disposed at the surface of the first hole passage.
In some embodiments, the surfaces of the first and second cells are each provided with a corrugated structure formed by a plurality of arc-shaped connections.
In some embodiments, the passivation layer is an inorganic dielectric layer, the inorganic dielectric layer is silicon oxide or silicon nitride, and the thickness of the passivation layer is 0.1 to 10 micrometers.
In some embodiments, the heating layer is any one of Ti, Au, Al, Pt, Ta, or a nitride or stacked combination thereof, and the heating layer has a thickness of 10 nanometers to 5 micrometers.
In some embodiments, a planar pad or lead is disposed on the heating layer of the first surface.
In some embodiments, the heating layer covers the whole surface or a partial area of the passivation layer of the first surface and the surface of the first pore channel, and the shape of the heating layer on the partial area is a linear line or a combination of various lines.
A manufacturing method based on the silicon-based atomization core comprises the following steps:
1) providing a silicon substrate, wherein the silicon substrate is provided with a first surface and a second surface which are opposite, one or more first pore channels and one or more second pore channels are respectively manufactured on the first surface and the second surface by adopting a dry etching process, one second pore channel corresponds to the position of at least one first pore channel and is communicated with the first pore channel, the pore diameter of the first pore channel is smaller than that of the second pore channel, and at least one step structure connected with the surface of the first pore channel closest to the second pore channel is formed on the surface of the second pore channel;
2) depositing a passivation layer on the first surface, the second surface, the first pore channel and the second pore channel;
3) and depositing a heating layer on part of the first surface or at least part of the first surface and the passivation layer of the first pore channel.
In some embodiments, the step 1 specifically includes:
coating photoresist on the first surface or the second surface, and forming a plurality of first display windows through exposure and development;
etching the silicon substrate in the first display window by adopting a Bosch process to form a first pore channel or a second pore channel, wherein the etching end point is in the silicon substrate, and removing the photoresist;
coating photoresist on the other surface, and forming a plurality of second display windows through exposure and development;
and etching the silicon substrate in the second display window by adopting a Bosch process to form another pore channel communicated with at least one first pore channel or second pore channel, and removing the photoresist.
In some embodiments, the etching and passivation period of the Bosch process used for fabricating the first via and the second via is 0.1 seconds to 20 seconds to form a corrugated structure comprising a plurality of arc-shaped connections on the surfaces of the first via and the second via.
In some embodiments, the passivation layer is an inorganic dielectric layer, the inorganic dielectric layer is silicon oxide or silicon nitride, the thickness of the passivation layer is 0.1 to 10 micrometers, the heating layer is any one of Ti, Au, Al, Pt, Ta, or a nitride or a stacked layer combination thereof, and the thickness of the heating layer is 10 nanometers to 5 micrometers.
An atomizer comprises the silicon-based atomizing core.
Compared with the prior art, the invention has the beneficial effects that:
(1) according to the invention, the atomization core micropore structure is made of a silicon-based material, a micropore channel can be formed in a step through hole mode, a large aperture in the structure can be used for oil storage, a small aperture is used for oil transportation, and the problem of dry burning and core pasting of micropore glass caused by single straight hole oil transportation can be effectively solved.
(2) The side wall of the pore channel in the silicon-based atomizing core has a unique corrugated structure due to the adoption of Bosch process etching, and the unique structure ensures that the through hole structure can better store and lock atomized liquid when having the function of conveying the atomized liquid, and can effectively prevent liquid leakage under the non-working state, thereby being better than the glass micropore design.
(3) Compared with a microporous ceramic-based atomizing core, the silicon-based atomizing core disclosed by the invention has the advantages that the size can be greatly compressed, the miniaturization of an atomizer product is more facilitated, and meanwhile, the problems of a microporous ceramic carbonization paste core and the reliability can be solved.
(4) Compared with a microporous glass-based atomizing core, the silicon-based atomizing core has lower material cost; meanwhile, the method is convenient for mass production and has lower process production cost.
Drawings
FIG. 1 is a schematic diagram of a first configuration of a silicon-based atomizing core in accordance with an embodiment of the present application;
FIG. 2 is a schematic diagram of a second configuration of a silicon-based atomizing core in accordance with an embodiment of the present application;
FIG. 3 is a schematic diagram of a third configuration of a silicon-based atomizing core of an embodiment of the present application;
fig. 4a-4c are schematic flow charts illustrating a method for fabricating a silicon-based atomizing core according to an embodiment of the present application.
Detailed Description
The invention is further explained below with reference to the figures and the specific embodiments. The drawings are only schematic and can be easily understood, and the specific proportion can be adjusted according to design requirements. The definitions of the top and bottom relationships of the relative elements and the front and back sides of the figures described herein are understood by those skilled in the art to refer to the relative positions of the components and thus all of the components may be flipped to present the same components and still fall within the scope of the present disclosure.
Referring to fig. 1, the embodiment of the present application proposes a silicon-based atomizing core, comprising a silicon substrate 1, wherein the thickness of the silicon substrate 1 ranges from 200 micrometers to 5 millimeters. The silicon substrate 1 comprises a first surface 11 and a second surface 12 which are opposite, at least a part of the first surface 11 is used for forming an atomizing surface of the silicon-based atomizing core, at least a part of the second surface 12 is used for forming an oil absorbing surface of the silicon-based atomizing core, and one or more first pore passages 4 formed by extending from the first surface 11 and one or more second pore passages 5 formed by extending from the second surface 12 are arranged on the silicon substrate 1. Wherein one of the second hole channels 5 corresponds to and is communicated with at least one of the first hole channels 4, in the embodiment of the present application, one of the second hole channels 5 corresponds to and is communicated with one of the first hole channels 4, and the first hole channel 4 is connected with the second hole channel 5, so as to facilitate the transportation of the atomized liquid. The pore diameter of the first pore passage 4 is different from the pore diameter of the second pore passage 5, and specifically, the pore diameter of the first pore passage 4 is smaller than the pore diameter of the second pore passage 5. The first channels 4 have a pore size in the range of 2 microns to 50 microns, and the second channels 5 have a pore size in the range of 20 microns to 10 mm. The atomized liquid is fed from the oil suction surface into the interior of the silicon substrate 1 and is stored in the second orifice 5, and the first orifice 4 is used to feed the atomized liquid, heated and atomized above the first orifice 4, and emitted from the atomization surface.
In a specific embodiment, the length of the first hole 4 is smaller than the length of the second hole 5, and specifically, the lengths of the first hole 4 and the second hole 5 are adjusted according to the thickness of the silicon substrate 1 and the corresponding proportion or actual condition. At least one step structure 6 connected with the surface of the first duct 1 closest to the second duct 5 is arranged on the surface of the second duct 5, the highest step surface in the step structure 6 is arranged on the surface of the first duct 4, the lowest step surface in the step structure 6 is arranged on the surface of the second duct 5, at least one connecting surface exists between the two, and the first through hole 4 and the second through hole 5 are connected through the step structure 6. Because the pore diameters of the first pore passage 4 and the second pore passage 5 are different, a micropore channel can be formed in a step through hole mode, and therefore the problem that the micropore glass-based atomizing core is burnt dry due to oil transportation through a single straight hole can be effectively solved.
In a specific embodiment, a passivation layer 2 is disposed on the surfaces of the first surface 11, the second surface 12, the first pore channel 4, and the second pore channel 5, and a heating layer 3 is disposed above the passivation layer 2 on a portion of the first surface 11 or at least a portion of the first surface 11 and the surface of the first pore channel 4. The passivation layer 2 is an inorganic medium layer, the inorganic medium layer is silicon oxide or silicon nitride, the thickness of the passivation layer 2 is 0.1 micron to 10 microns, the heating layer 3 is metal, metal nitride or two mixtures, the heating layer 3 is any one of Ti, Au, Al, Pt, Ta or nitride or laminated combination thereof, and the thickness of the heating layer 3 is 10 nanometers to 5 microns. The heating layer 3 covers the whole surface or a partial area of the passivation layer 2 on the first surface 11 and the surface of the first pore passage 4, and the shape of the heating layer 3 on the partial area is a linear strip or a combination of various lines. The passivation layer 2 plays a role in protecting the silicon substrate 1, and prevents the silicon substrate 1 from being affected by oxidation and the like in the heating process; simultaneously, the atomization surface is convenient to gather heat, the atomization effect is improved, the pure silicon is prevented from radiating too fast, and the atomization effect is reduced. The heating layer 3 uniformly covers the surfaces of the first surface 11 and the first channel 4, and uniformly generates heat by adopting the principle of resistance heating, so that the atomized liquid input into the first channel 4 can be uniformly heated, and a larger atomized area exists. A flat pad or lead is provided on the heating layer 3 of the first surface 11, which is supplied with electrical power as an electrode for electrically heating the heating layer 3.
In a specific embodiment, the surfaces of the first duct 4 and the second duct 5 are provided with a corrugated structure formed by a plurality of arc-shaped connections. The existence of ripple structure makes the silica-based atomizing core of this application have good lock liquid function, and the radian size of the arc among this ripple structure all can be adjusted. In a preferred embodiment, the corrugation structure on the first duct 4 is a small corrugation, the corrugation structure on the second duct 5 is a large corrugation, the arc curvature of the corrugation structure on the first duct 4 is larger than the arc curvature of the corrugation structure on the second duct 5, and/or the arc radius of the corrugation structure on the first duct 4 is smaller than the arc radius of the corrugation structure on the second duct 5, at this time, the corrugation structure on the surface of the first duct 4 is more protruded, and the corrugation structure on the surface of the second duct 5 is flatter. Also can adjust the size of the ripple structure on the surface of first pore 4 and second pore 5 according to actual demand, silicon substrate 1's micropore passageway lateral wall is more favorable to pinning the atomized liquid because it possesses unique ripple structure, and curved radian size in the further processing adjustment ripple structure is favorable to second pore 5 to store the lock liquid of being convenient for under the non-operating condition of first pore 4 when being favorable to transmitting the atomized liquid, prevents to reveal. Compare in micropore ceramic base atomizing core, the silicon-based atomizing core of this application can make and obtain the large tracts of land atomizing region to there is fine homogeneity, the atomizing effect is good, and the volume also can reduce by a wide margin in addition, realizes the miniaturization of device.
Referring to fig. 2 and 3, the second portholes 5 in the second surface 12 correspond to two or three first portholes 4 in the first surface 11, but may of course correspond to more first portholes 4. Even the width of the connecting surface of the stepped structure 6 can be adjusted according to actual requirements.
Corresponding to the silicon-based atomizing core, the embodiment of the application also provides a manufacturing method based on the silicon-based atomizing core, which comprises the following steps:
1) referring to fig. 4a and 4b, providing a silicon substrate 1 with a thickness of 200 micrometers to 5 millimeters, where the silicon substrate has a first surface 11 and a second surface 12 opposite to each other, coating a photoresist on the second surface 12, exposing and developing to form a plurality of second display windows, performing dry etching on the silicon substrate in the second display windows to form one or more second channels 5, where an etching end point is inside the silicon substrate 1, an etching depth is a first depth, a pore diameter of each second channel 5 is 20 micrometers to 10 millimeters, removing the photoresist, coating a photoresist on the first surface 11, exposing and developing to form a plurality of first display windows; and performing dry etching on the silicon substrate 1 in the first display window to form one or more first pore channels 4 communicated with the second pore channels 5, wherein the etching depth of the first pore channels 4 is the thickness minus the first depth of the silicon substrate 1, the pore diameter of the first pore channels 4 is 2 micrometers to 50 micrometers, finally removing the photoresist, and finally manufacturing and forming the first pore channels 4 and the second pore channels 5 which are connected with each other on the same silicon substrate 1. It is needless to say that the first pore passage 4 having a predetermined depth may be formed on the first surface 11 of the silicon substrate 1, and the second pore passage 5 penetrating the first pore passage 5 may be formed on the second surface 12 of the silicon substrate 1. One of the second ducts 5 corresponds to and is interconnected with at least one of the first ducts 4, the first duct 4 has a smaller pore size than the second duct 5, and at least one step 6 is formed on the surface of the second duct 5, which is connected to the surface of the first duct 4 closest to the second duct 5. Because the first pore canal 4 and the second pore canal 5 are both manufactured by adopting the Bosch process, and the Bosch process has a ripple effect, a ripple structure formed by connecting a plurality of arcs is formed on the side wall surfaces of the first pore canal 4 and the second pore canal 5, and the arc radian of the ripple structure can be effectively adjusted by adjusting the process parameters of the Bosch process, such as the etching and passivation period. As an example, the etching and passivation period of the Bosch process of the first porthole 4 and the second porthole 5 is 0.1 second to 20 seconds, and a corrugated structure formed by a plurality of arc-shaped connections is formed on the surface of the first porthole 4 and the surface of the second porthole 5. The etching end point of the first pore passage 4 or the second pore passage 5 confirms the etching depth according to the slicing, and the process parameters are solidified subsequently to obtain stable etching parameters.
2) Referring to fig. 4c, silicon oxide or silicon nitride is deposited on the first surface 11, the second surface 12, the first pore channel 4 and the second pore channel 5 by using a chemical vapor deposition or thermal oxidation process to form a passivation layer 2 with a thickness of 0.1 to 10 micrometers, and the passivation layer 2 completely covers all surfaces of the silicon substrate 1, so that the silicon substrate 1 can be protected from oxidation, contamination and the like, and meanwhile, the heat accumulation of the atomization surface can be facilitated, and the atomization effect can be improved.
3) Referring to fig. 1, a heating layer 3 with a thickness of 10 nm to 5 μm is formed by depositing any one of Ti, Au, Al, Pt, Ta, or a nitride or a stacked combination thereof on a portion of the first surface 11 or at least a portion of the first surface 11 and a passivation layer of the first channel 4 through a physical vapor deposition or evaporation process, and the heating layer 3 covers a portion of the first surface 11 or at least a portion of the first surface 11 and the first channel 4, so as to effectively increase an atomization area and achieve a better atomization effect.
Because the silicon substrate 1 is adopted by the silicon substrate atomizing core, the material cost is lower, and the specific main processes are relatively mature semiconductor processes such as photoetching, dry etching, photoetching mask stripping, silicon oxide film forming and the like, so that the silicon substrate atomizing core is convenient for mass production and has lower process production cost. Compared with ceramic-based atomizing cores and glass-based atomizing cores, the ceramic-based atomizing core has better performance and atomizing effect.
Embodiments of the present application further provide an atomizer, including the above-mentioned silicon-based atomizing core.
The above embodiments are only used to further illustrate the silicon-based atomizing core and the manufacturing method thereof of the present invention, but the present invention is not limited to the embodiments, and any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention fall within the protection scope of the technical solution of the present invention.
Claims (14)
1. A silicon-based atomizing core characterized by: the silicon substrate is provided with one or more first pore passages formed by extending from the first surface and one or more second pore passages formed by extending from the second surface, wherein one second pore passage corresponds to the position of at least one first pore passage and is communicated with the first pore passage, the pore diameter of the first pore passage is smaller than that of the second pore passage, the surface of the second pore passage is provided with at least one step structure connected with the surface of the first pore passage closest to the second pore passage, and the surfaces of the first surface, the second surface, the first pore passage and the second pore passage are provided with passivation layers, and a heating layer is arranged above the passivation layer on part of the first surface or at least part of the first surface and the surface of the first pore channel.
2. The silicon-based atomizing core of claim 1, wherein: the length of the first pore canal is less than or equal to the length of the second pore canal.
3. The silicon-based atomizing core of claim 1, wherein: the first channels have a pore size in the range of 2 microns to 50 microns and the second channels have a pore size in the range of 20 microns to 10 millimeters.
4. The silicon-based atomizing core of claim 1, wherein: the highest step surface in the step structure is arranged on the surface of the first hole channel.
5. The silicon-based atomizing core of claim 1, wherein: and the surfaces of the first pore canal and the second pore canal are respectively provided with a corrugated structure formed by connecting a plurality of arcs.
6. The silicon-based atomizing core of claim 1, wherein: the passivation layer is an inorganic dielectric layer, the inorganic dielectric layer is silicon oxide or silicon nitride, and the thickness of the passivation layer is 0.1-10 micrometers.
7. The silicon-based atomizing core of claim 1, wherein: the heating layer is any one of Ti, Au, Al, Pt and Ta or nitrides or laminated combinations thereof, and the thickness of the heating layer is 10 nanometers to 5 micrometers.
8. The silicon-based atomizing core of claim 1, wherein: a planar pad or lead is disposed on the heating layer of the first surface.
9. The silicon-based atomizing core of claim 1, wherein: the heating layer covers the whole surface or a local area of the passivation layer on the first surface and the surface of the first pore passage, and the shape of the heating layer on the local area is a linear strip or a combination of various lines.
10. A method for manufacturing a silicon-based atomizing core based on any one of claims 1 to 9, characterized in that: the method comprises the following steps:
1) providing a silicon substrate, wherein the silicon substrate is provided with a first surface and a second surface which are opposite, one or more first pore channels and one or more second pore channels are respectively manufactured on the first surface and the second surface by adopting a dry etching process, one second pore channel corresponds to the position of at least one first pore channel and is communicated with the first pore channel, the pore diameter of the first pore channel is smaller than that of the second pore channel, and at least one step structure connected with the surface of the first pore channel closest to the second pore channel is formed on the surface of the second pore channel;
2) depositing a passivation layer on the first surface, the second surface, the surfaces of the first hole and the second hole;
3) and depositing a heating layer on part of the first surface or at least part of the first surface and the passivation layer of the first pore channel.
11. The method of claim 10, wherein the step of forming the silica-based atomizing core comprises: the step 1 specifically comprises:
coating photoresist on the first surface or the second surface, and forming a plurality of first display windows through exposure and development;
etching the silicon substrate in the first display window by adopting a Bosch process to form a first pore channel or a second pore channel, wherein the etching end point is in the silicon substrate, and removing the photoresist;
coating photoresist on the other surface, and forming a plurality of second display windows through exposure and development;
and etching the silicon substrate in the second display window by adopting a Bosch process to form another pore channel communicated with at least one first pore channel or second pore channel, and removing the photoresist.
12. A method for manufacturing a silicon-based atomizing core according to claim 10 or 11, wherein: the etching and passivating period of the Bosch process adopted during the manufacturing of the first pore canal and the second pore canal is 0.1 to 20 seconds so as to form a corrugated structure formed by connecting a plurality of arcs on the surfaces of the first pore canal and the second pore canal.
13. The method of claim 10, wherein the step of forming the silica-based atomizing core comprises: the passivation layer is an inorganic medium layer, the inorganic medium layer is silicon oxide or silicon nitride, the thickness of the passivation layer is 0.1 micron to 10 microns, the heating layer is any one of Ti, Au, Al, Pt, Ta or nitride or laminated combination thereof, and the thickness of the heating layer is 10 nanometers to 5 microns.
14. An atomizer, characterized by: comprising a silicon-based atomizing core according to any one of claims 1 to 9.
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