CN114465010A - Electric control super-surface terahertz modulator based on electromagnetic induction transparency phenomenon - Google Patents
Electric control super-surface terahertz modulator based on electromagnetic induction transparency phenomenon Download PDFInfo
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- 230000005674 electromagnetic induction Effects 0.000 title claims abstract description 36
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 126
- 238000002955 isolation Methods 0.000 claims abstract description 14
- 230000004044 response Effects 0.000 claims abstract description 9
- 230000005540 biological transmission Effects 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 239000011889 copper foil Substances 0.000 claims description 12
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/28—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the amplitude
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Abstract
The invention discloses an electric control super-surface terahertz modulator based on an electromagnetic induction transparency phenomenon, which consists of a plurality of modulation units, wherein each modulation unit comprises: the high-electron-mobility transistor comprises a dielectric plate, a plane isolation layer, a thick line gold foil strip, a thin line gold foil strip, an open square ring-shaped gold foil strip, a T-shaped gold foil strip and a high-electron-mobility transistor. The planar isolation layer is attached to the upper surface of the dielectric plate, the dielectric plate and the gold foil tape are isolated, the gold foil tape is covered on the planar isolation layer, the thick line gold foil tape is used as a feeder line of an external power supply, the open square ring-shaped gold foil tape forms a bright mode oscillator for generating an electromagnetic induction transparent image, the T-shaped gold foil tape and the high electron mobility transistor form a long straight line and serve as an adjustable oscillator for generating the electromagnetic induction transparent image, and the high electron mobility transistor uses the thin line gold foil tape as a grid control switch; the electromagnetic response is changed by changing the bias value applied to the grid, and the structure has the advantages of high modulation depth, high modulation speed, integration, simple regulation and control and the like.
Description
Technical Field
The invention belongs to a transmission type terahertz wave amplitude modulator, and particularly relates to a transmission type modulator capable of changing a working mode by changing grid feed bias voltage.
Background
The terahertz modulator is one of main modulation devices for terahertz signal intensity, is widely applied to the fields of terahertz communication, military radar detection, security inspection imaging and the like, and can emit information etherhertz waves contained in baseband signals (electric signals) in a channel in a mode of taking the information etherhertz waves as carriers. The high-performance terahertz modulator needs to realize high-speed, effective and integratable terahertz wave modulation, and the existing terahertz modulator cannot be taken into consideration generally. In order to save resources and improve the utilization rate of a modulation system, dynamic regulation and control of terahertz waves need to be realized under the condition that the structure of a modulator is not changed. The general method is to use tunable materials, and change the physical characteristics of the tunable materials by means of light control, temperature control, electric control and the like, so as to change the working state of the modulator. Among them, the electric control has greater practicability because of low control requirement and high integration level.
The phenomenon of Electromagnetic Induced Transparency (EIT) is generated by atomic coherence and quantum interference effects in the interaction process of light and atoms, and the interaction of an external electromagnetic field and a substance can control the optical response of a material and reduce the absorption of incident light by a medium or even prevent the absorption of the medium. By quantum interference between the excitation path driven by the probe field and the laser path driven by the coupling field, a transparent window will open up on the absorption curve, and anomalous dispersion in the transparent window will create the unique phenomenon of slow waves, which makes EIT have various potential applications in signal processing, quantum memory and optical switches.
It was found that a system using gold foil strips and open resonator rings produced an electromagnetic induction transparency phenomenon (EIT) analogous to that of the classical system. Due to the severe disturbance of the bright and dark resonators to the intracavity field, an electromagnetic induction transparency phenomenon is generated in the super-surface system. The substrate is covered with the graphene isoelectric tuning material, and the EIT transparent window can be adjusted by changing the loading voltage to change the conductivity of the graphene. At present, the terahertz wave amplitude modulation can be realized by the device structure, but the modulation depth is lower because the substrate is used for tuning instead of the harmonic oscillator.
Through retrieval, application publication No. CN102279476A, a high-speed electrical modulation terahertz modulator comprises a dielectric substrate (4), wherein the dielectric substrate (4) is made of a material transparent to terahertz waves, an array formed by high-electron-mobility transistors (3) is distributed on the surface of the dielectric substrate, frequency selection surface structures (2) are further attached to the surface of the dielectric substrate and the surface of the high-electron-mobility transistor array, each frequency selection surface structure is a graphical conductive thin film with a band-pass filter structure, and the conductive thin film locally and correspondingly to each high-electron-mobility transistor respectively form a source electrode (b), a drain electrode (c) and a grid electrode (a) of the high-electron-mobility transistor; the electron mobility of the high electron mobility transistor is above 1500cm 2/Vs. The terahertz wave amplitude modulation device realizes the high-speed modulation effect on the terahertz wave amplitude in an electrical modulation mode, the modulation speed can be higher than 10MHz, and the relative modulation depth is higher than 50%. The high-speed electric control terahertz modulator disclosed by the patent is high in modulation rate, but the relative modulation depth is only 50%, the electromagnetic induction transparency-like phenomenon is realized through the super surface, the maximum relative modulation depth of 96% can be obtained in the transmission window, and the modulation effect of the HEMT super surface is enhanced.
Application publication No. CN108258374B, a port adjustable reflective attenuator based on electromagnetic induction transparency phenomenon, includes dielectric plate, plane copper foil layer, thick line copper foil area, fine line copper foil area and annular copper foil area, integrated inductance and paster varactor. The plane copper foil layer is attached to the bottom of the dielectric plate and used as a grounding end, the copper foil tape is covered on the other side of the dielectric plate, and the thick line copper foil tape is used as an input/output interface. The thin wire copper foil layer and the annular copper foil strip simultaneously form a resonant cavity and a resonant ring which can generate an electromagnetic induction transparency phenomenon, and the chip inductor, the varactor and the thick wire copper foil strip are positioned at two ends of the resonant cavity to form a composite left-right hand transmission line; the composite right-left hand transmission line is composed of 5 identical units, and the optical response of the transmission line is changed by changing the bias voltage value applied to the transmission line, so that port adjustability is realized. The port-adjustable reflective attenuator based on the electromagnetic induction transparency phenomenon has a low working frequency band due to the volume limitation of devices such as an inductance capacitor and the like, and cannot be applied to terahertz wave bands. On the basis of generating the electromagnetic induction transparency phenomenon, the HEMT is integrated on the design of the harmonic oscillator, the resonance mode of the harmonic oscillator is changed through the power feeding of the HEMT to change the working state of the modulator, and the high-frequency band electromagnetic wave modulation method is used for regulating and controlling the electromagnetic wave at present.
Disclosure of Invention
The present invention is directed to solving the above problems of the prior art. The electric control super-surface terahertz modulator is high in modulation depth, high in modulation rate, capable of being integrated and simple to regulate and control and based on the electromagnetic induction transparency phenomenon. The technical scheme of the invention is as follows:
the utility model provides an automatically controlled super surface terahertz modulator based on transparent phenomenon of electromagnetic induction, it is constituteed by a plurality of automatically controlled super surface terahertz modulation unit that is square arrangement, and wherein every automatically controlled super surface terahertz modulation unit includes: the high-electron-mobility transistor array comprises a dielectric plate, a planar isolation layer, a thick line gold foil strip, a thin line gold foil strip, an open square ring-shaped gold foil strip, a T-shaped gold foil strip and a high-electron-mobility transistor, wherein the planar isolation layer and the high-electron-mobility transistor are attached to the upper surface of the dielectric plate, and the thick line gold foil strip, the thin line gold foil strip, the open square ring-shaped gold foil strip and the T-shaped gold foil strip are covered on the upper surface of the planar isolation layer; the thick gold foil belt is used as a feeder line of an external power supply, the open square ring-shaped gold foil belt is used as a bright mode oscillator for generating an electromagnetic induction transparent phenomenon, the T-shaped gold foil belt and the high electron mobility transistor form a long straight line to be used as an adjustable oscillator for generating the electromagnetic induction transparent phenomenon, and the high electron mobility transistor takes the thin gold foil belt as a grid electrode; the electromagnetic response is changed by changing the bias voltage value applied to the grid, and the modulation voltage is applied to the grid of the transistor to regulate the high-speed change of the conduction and the disconnection of the channel, so that the transformation of the super-surface structure is dynamically switched; when no bias voltage is arranged on the grid electrode, almost no coupling exists between the adjustable oscillator and the open-mode oscillator, and the super-surface shows strong absorption of terahertz; the gate is loaded with bias voltage to disconnect the high electron mobility transistor, the electromagnetic response mode of the adjustable oscillator is changed, the coupling between the adjustable oscillator and the open-mode oscillator is enhanced to generate an electromagnetic induction transparent phenomenon, and the adjustability of the transmission characteristic of the super surface is realized.
Further, the number of the electrically controlled super-surface terahertz modulation units is 16 × 16.
Furthermore, the dielectric plate is a silicon carbide SiC substrate, the thickness of the dielectric plate is 180 mu m, the size of the dielectric plate is 450 mu m multiplied by 450 mu m, and the relative dielectric constant of the dielectric plate is 9.7. The AlGaN/GaN heterojunction grown on the silicon carbide substrate is uniform, and the transmission spectrum of the silicon carbide substrate with the thickness of 180 mu m is at the position of a transmission peak at 0.27THz, which is beneficial to improving the transmittance of a device and reducing the insertion loss.
Furthermore, the thicknesses of the thick gold foil belt, the open square ring-shaped gold foil belt, the T-shaped gold foil belt and the thin gold foil belt are all 0.2 mu m, and the gold foil belts can be manufactured by deposition and photoetching at the same time.
Furthermore, the line width of the open square ring-shaped gold foil strip is 5 microns, the thickness of the open square ring-shaped gold foil strip is 0.2 microns, the transverse outer length of the open square ring-shaped gold foil strip is 276 microns, the longitudinal outer length of the open square ring-shaped gold foil strip is 210 microns, the width of the open square ring-shaped gold foil strip is 18 microns, and the distance between the open square ring-shaped gold foil strips is 20 microns. The open square-ring-shaped gold foil strips are arranged symmetrically to the thick gold foil lines, so that the influence of the thick gold foil lines on the coupling between the open square-ring-shaped gold foil strip pairs is counteracted.
Furthermore, the high electron mobility transistor is composed of an AlGaN/GaN heterostructure, and the AlGaN component is Al0.27GaN0.73. Compared with other heterostructure of common HEMT, the AlGaN/GaN heterostructure has higher carrier concentration, and the carrier concentration has obvious influence on the modulation depth of the modulator.
Furthermore, the width of the thick line gold foil belt is 5 μm, the length of the thick line gold foil belt is 450 μm, and the thick line gold foil line is partially overlapped with the open square ring-shaped gold foil belt.
Furthermore, the thin line gold foil strip is 1.5 μm in line width and 16 μm in length and is connected with the thick line gold foil strip.
Further, the line width of the T-shaped gold foil strip is 5 μm, the longitudinal length of the T-shaped gold foil strip is 205 μm, and the length of a portion, close to one end of the high electron mobility transistor, parallel to the thin gold foil strip is 14 μm.
Further, the distance between the open square-ring-shaped gold foil strip and the T-shaped gold foil strip is 30 microns.
The invention has the following advantages and beneficial effects:
1. the invention adopts an electricity regulation and control mode, and the regulation and control mode is simple, good in modulation effect and easy to integrate;
2. the artificial microstructure formed by the resonance structure formed by the gold foil wire is similar to the electromagnetic induction transparency phenomenon in a classical system, and a large modulation rate can be obtained by a slow wave effect and a local electric field. The adoption of an electric regulation mode to realize the electromagnetic induction transparency phenomenon needs to add a feeder line in the design of the super surface, and the feeder line in the prior invention is often coupled with harmonic oscillators generating the electromagnetic induction transparency phenomenon to damage the coupling between the harmonic oscillators originally. The invention combines the part of the open square annular gold foil strip with the feeder line, weakens the interference of the feeder line to the EIT, and in addition, adopts a symmetrical structure to counteract the influence of the grid electrode on the open square annular gold foil strip.
3. By adopting the high electron mobility transistor, the carrier concentration of the high electron mobility transistor can be controlled by utilizing the grid bias voltage, so that the electromagnetic response mode of the modulator harmonic oscillator is changed, and the voltage modulation of the signal amplitude is facilitated.
Drawings
FIG. 1 is a front view of a preferred embodiment of the present invention;
FIG. 2 is a detailed view of the high electron mobility transistor and the thin gold foil strip of the present invention;
FIG. 3 is a block diagram of a hierarchy of electrically controlled modulator cells in accordance with the present invention;
FIG. 4 is a graph of forward transmission coefficients for a modulator with gate bias at 0V and-8V in accordance with the present invention;
fig. 5 is a graph of group delay for a modulator gate bias at-8V in accordance with the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described in detail and clearly with reference to the accompanying drawings. The described embodiments are only some of the embodiments of the present invention.
The technical scheme for solving the technical problems is as follows:
as shown in fig. 1, an electrically controlled super-surface terahertz modulator based on an electromagnetic induction transparency phenomenon is composed of a plurality of electrically controlled super-surface terahertz modulation units arranged in a square shape, wherein each electrically controlled super-surface terahertz modulation unit includes: the high-mobility transistor array comprises a dielectric plate 1, a plane isolation layer 10, thick-line gold foil strips 2, 4 and 6, a thin-line gold foil strip 13, opening square-ring-shaped gold foil strips 3 and 5, T-shaped gold foil strips 7 and 9 and a high-electron-mobility transistor 8, wherein the plane isolation layer 10 and the high-electron-mobility transistor 8 are attached to the upper surface of the dielectric plate 1, and the thick-line gold foil strips 2, 4 and 6, the thin-line gold foil strip 13, the opening square-ring-shaped gold foil strips 3 and 5 and the T-shaped gold foil strips 7 and 9 are covered on the upper surface of the plane isolation layer 10; the thick gold foil strips 2, 4 and 6 are used as a feeder line of an external power supply, the open square ring-shaped gold foil strips 3 and 5 are used as bright mode vibrators for generating electromagnetic induction transparent images, the T-shaped gold foil strips 7 and 9 and the high electron mobility transistor 8 form a long straight line to be used as an adjustable vibrator for generating the electromagnetic induction transparent images, and the high electron mobility transistor 8 takes the thin gold foil strip 13 as a grid electrode; the electromagnetic response is changed by changing the bias voltage value applied to the grid electrode, and the adjustability of the transmission characteristic of the super surface is realized.
Preferably, the number of the electric control super-surface terahertz modulation units is 16 × 16;
preferably, the dielectric plate 1 is a silicon carbide SiC substrate, the thickness is 180 μm, the size is 450 μm × 450 μm, and the relative dielectric constant is 9.7.
Preferably, the thick gold foil strips 2, 4 and 6, the open square ring-shaped gold foil strips 3 and 5, the T-shaped gold foil strips 7 and 9 and the thin gold foil strip 13 are all 0.2 μm thick.
Preferably, the open square-ring-shaped copper foil strips 3 and 5 are arranged symmetrically to the thick gold foil strip 4, the line width is 5 μm, the thickness is 0.2 μm, the transverse outer length is 276 μm, the longitudinal outer length is 210 μm, the opening width is 18 μm, and the distance between the open square-ring-shaped gold foil strips 3 and 5 is 20 μm.
Preferably, the high electron mobility transistor 8 is formed of an AlGaN/GaN heterostructure, and the AlGaN component is Al0.27GaN0.73。
Preferably, the width of the thick gold foil strips 2, 4 and 6 is 5 μm, the length of the thick gold foil strips is 450 μm, the thick gold foil strip 2 is partially overlapped with the open square ring-shaped gold foil strip 3, and the thick gold foil strip 6 is partially overlapped with the open square ring-shaped gold foil strip 5.
Preferably, the thin gold foil strip 11 has a line width of 1.5 μm and a length of 16 μm, and is connected to the thick gold foil strip 4.
Preferably, the T-shaped gold foil strip 7; the line width of 9 is 5 μm, the longitudinal length is 205 μm, and the length near the end of the high electron mobility transistor 8 is 14 μm.
Preferably, the distance between the open square-ring-shaped gold foil strip 3 and the T-shaped gold foil strip 7 is 30 μm.
Preferably, as shown in fig. 2, the dielectric plate 1 is a substrate made of silicon carbide, the high electron mobility transistor is fabricated on the dielectric plate, the planar isolation layer 10 is laid on the upper surface of the dielectric plate 1 except for the high electron mobility transistor, the open square resonance rings 3 and 5, the T-shaped gold foil lines 7 and 9, and the gold foil bias power feeding ports 2, 4 and 6 are laid on the upper surface of the planar isolation layer 10; the gold foil bias feed ports 2 and 6 are connected with the positive electrode of the power supply and grounded, and the gold foil bias feed port 4 is connected with the negative electrode of the power supply; the complete electrically controlled super-surface modulator consists of 16 x 16 units as shown in fig. 1.
Preferably, in this embodiment, the spacing between the open square ring-shaped gold foil resonance rings 3 and 5 is 30 μm, the lateral outer length is 276 μm, the longitudinal outer length is 210 μm, the line width is 5 μm, and the opening width is 18 μm. The dielectric plate 1 had a relative dielectric constant of 9.7 and a plate thickness of 180 μm. The thick line gold foil strips 2, 4 and 6 have a length of 450 μm and a line width of 5 μm. As shown in FIG. 3, the T-shaped gold foil strip has a line width of 5 μm, a longitudinal length of 205 μm, and a length of 14 μm near the end of the HEMT 8, and is connected with the HEMT 8 through ohmic contacts to form an electrical path. The fine gold foil strip replaces the thick gold foil strip 4 at the part of the high electron mobility transistor 8, and is electrically connected with the high electron mobility transistor 8 through a schottky contact to control the on-off of the high electron mobility transistor 8.
As shown in fig. 4, when the bias applied to the gold foil bias feeding port 4 is 0V, the high electron mobility transistor 8 is in a conducting state, the coupling between the open square ring-shaped gold foil resonance ring and the T-shaped gold foil strip is weak, and the transmission coefficient of the designed terahertz modulator at the resonance frequency of 0.27THz is 0.0316, which shows strong absorption of terahertz waves; when the bias applied to the multi-wave bias feed port 4 is-8V, the high electron mobility transistor 8 is in a pinch-off state, the coupling between the open square ring-shaped gold foil resonance ring and the T-shaped gold foil strip becomes strong, an electromagnetic induction-like transparent phenomenon is generated, a transmission window appears near a 0.27THz frequency band, the transmission coefficient at the 0.27THz position is 0.790, and a modulation depth of 96% is obtained.
As shown in fig. 5, there is a significant slow wave effect at the transmission window, resulting in a maximum group delay of 11.2 ps.
The structure combined with the high electron mobility transistor can be well integrated in optical equipment, and can conveniently control the transmission intensity of electromagnetic waves so as to modulate optical signals.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The above examples are to be construed as merely illustrative and not limitative of the remainder of the disclosure. After reading the description of the invention, the skilled person can make various changes or modifications to the invention, and these equivalent changes and modifications also fall into the scope of the invention defined by the claims.
Claims (10)
1. The utility model provides an automatically controlled super surface terahertz modulator based on transparent phenomenon of electromagnetic induction which characterized in that comprises a plurality of automatically controlled super surface terahertz modulation unit that is the square arrangement, and wherein every automatically controlled super surface terahertz modulation unit includes: the device comprises a dielectric plate (1), a plane isolation layer (10), a thick line gold foil tape (2; 4; 6), a thin line gold foil tape (11), an opening square ring-shaped gold foil tape (3; 5), a T-shaped gold foil tape (7; 9) and a high electron mobility transistor (8), wherein the plane isolation layer (10) and the high electron mobility transistor (8) are both attached to the upper surface of the dielectric plate (1), and the thick line gold foil tape (2; 4; 6), the thin line gold foil tape (11), the opening square ring-shaped gold foil tape (3; 5) and the T-shaped gold foil tape (7; 9) are both covered on the upper surface of the plane isolation layer (10); the thick line gold foil belt (2; 4; 6) is used as a feeder line of an external power supply, the opening square ring-shaped gold foil belt (3; 5) is used as a bright mode oscillator for generating an electromagnetic induction transparent phenomenon, the T-shaped gold foil belt (7; 9) and the high electron mobility transistor (8) form a long straight line to be used as an adjustable oscillator for generating the electromagnetic induction transparent phenomenon, and the high electron mobility transistor (8) takes a thin line gold foil belt (11) as a grid electrode; the electromagnetic response is changed by changing the bias voltage value applied to the gate, and the switching of the super-surface structure is dynamically switched by applying a modulation voltage to the transistor gate to regulate the high-speed change of the conduction and disconnection of the channel conductance. When no bias voltage is arranged on the grid electrode, almost no coupling exists between the adjustable oscillator and the open-mode oscillator, and the super-surface shows strong absorption of terahertz; the gate is loaded with bias voltage to disconnect the high electron mobility transistor, the electromagnetic response mode of the adjustable oscillator is changed, the coupling between the adjustable oscillator and the open-mode oscillator is enhanced to generate an electromagnetic induction transparent phenomenon, and the adjustability of the transmission characteristic of the super surface is realized.
2. The electrically controlled super-surface terahertz modulator based on the electromagnetic induction transparency phenomenon as claimed in claim 1, wherein the number of the electrically controlled super-surface terahertz modulation units is 16 x 16.
3. The electric control super-surface terahertz modulator based on the electromagnetic induction transparency phenomenon as claimed in claim 1, wherein the dielectric plate (1) is a silicon carbide (SiC) substrate with a thickness of 180 μm, a size of 450 μm x 450 μm and a relative dielectric constant of 9.7.
4. The electric control super-surface terahertz modulator based on the electromagnetic induction transparency phenomenon as claimed in claim 1 is characterized in that the thick gold foil strip (2; 4; 6), the open square ring-shaped gold foil strip (3; 5), the T-shaped gold foil strip (7; 9) and the thin gold foil strip (11) are all 0.2 μm thick.
5. The electric control super-surface terahertz modulator based on the electromagnetic induction transparency phenomenon as claimed in claim 1 is characterized in that the open square ring-shaped copper foil strips (3; 5) are arranged symmetrically to the thick gold foil strip (4), the line width is 5 μm, the thickness is 0.2 μm, the transverse outer length is 276 μm, the longitudinal outer length is 210 μm, the opening width is 18 μm, and the distance between the open square ring-shaped gold foil strips (3; 5) is 20 μm.
6. The electrically controlled super-surface terahertz modulator based on electromagnetic induction transparency phenomenon as claimed in claim 1, wherein the high electron mobility transistor (8) is composed of AlGaN/GaN heterostructure, AlGaN component is Al0.27GaN0.73。
7. The electric control super-surface terahertz modulator based on the electromagnetic induction transparency phenomenon as claimed in claim 1, wherein the width of the thick gold foil strip (2; 4; 6) is 5 μm, the length of the thick gold foil strip is 450 μm, the thick gold foil strip (2) is partially overlapped with the open square ring-shaped gold foil strip (3), and the thick gold foil strip (6) is partially overlapped with the open square ring-shaped gold foil strip (5).
8. The electrically-controlled super-surface terahertz modulator based on the electromagnetic induction transparency phenomenon as claimed in claim 1, wherein the thin-line gold foil strip (11) has a line width of 1.5 μm and a length of 16 μm, and is connected with the thick-line gold foil strip (4).
9. The electrically-controlled super-surface terahertz modulator based on the electromagnetic induction transparency phenomenon as claimed in claim 1, wherein the line width of the T-shaped gold foil strip (7; 9) is 5 μm, the longitudinal length is 205 μm, and the length of the portion close to one end of the high electron mobility transistor (8), i.e. parallel to the thin gold foil line (11), is 14 μm.
10. The electric control super-surface terahertz modulator based on the electromagnetic induction transparency phenomenon as claimed in claim 1, wherein the distance between the open square-ring-shaped gold foil strip (3) and the T-shaped gold foil strip (7) is 30 μm.
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