CN115145056B - Terahertz modulator based on T-shaped and E-shaped super-surface resonance structures - Google Patents
Terahertz modulator based on T-shaped and E-shaped super-surface resonance structures Download PDFInfo
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Abstract
The invention discloses a terahertz modulator based on T-shaped and E-shaped super-surface resonance structures, which relates to the field of terahertz wave resonance point modulators and comprises the following components: the resonant structure comprises a double T-shaped resonant structure and a double E-shaped resonant structure, wherein the double T-shaped resonant structure is in mirror symmetry along the central line of the dielectric substrate so as to form a first control area for resonance on the dielectric substrate, and the double E-shaped resonant structure is in mirror symmetry along the central line of the dielectric substrate so as to form a second control area for resonance on the dielectric substrate; the modulation switch is used for changing the transmission coefficient of the terahertz wave at the resonance point; the surface of the dielectric substrate is adhered with a metamaterial structure layer, and the dielectric substrate, the double-T-shaped resonant structure, the double-E-shaped resonant structure and the modulation switch are all adhered to the metamaterial structure layer. The invention can simultaneously generate two resonance points, greatly improves the richness of the terahertz modulator in multiple working modes and has good modulation effect.
Description
Technical Field
The invention relates to the field of terahertz wave resonance point modulators, in particular to a terahertz modulator based on T-shaped and E-shaped super-surface resonance structures.
Background
The terahertz modulator is used as one of main modulation devices of terahertz signal intensity, is widely applied to a plurality of fields such as terahertz communication, military radar detection, security inspection imaging and the like, and can emit information contained in a baseband signal (electric signal) in a channel in a way that information terahertz waves are used as carriers. The principle is that the carrier distribution in the semiconductor material is changed through an external electric field, so that the electromagnetic response of the super-surface structure to the terahertz wave is changed, and finally the purpose of regulating and controlling the terahertz wave is achieved.
Terahertz waves (THz) are the electromagnetic wave of frequency range 0.1-10THz and bridge the microwave and infrared regions of the electromagnetic spectrum, attracting increasing attention over the past 20 years. In the case of terahertz wave communication, since the THz band is high in data transmission rate, a wireless transmission speed of 10Gbps 100 to 1000 times faster than the current Ultra Wideband (UWB) technology is achieved. And wireless communication is one of the important research direction technologies that may bring great breakthrough to modern electronic information. Therefore, in the background, terahertz waves are effectively and ultra-rapidly regulated, so that the application of data transmission in communication and imaging becomes a research content with great potential and value. In addition, the breakthrough of the terahertz modulator can bring important development to the terahertz communication technology based on the direct modulation method. The existing terahertz super-surface modulator is single in working mode, few in current path and capable of generating only one resonance point, and only one resonance point can be modulated on the basis. The terahertz modulator with the multiple operation modes has important application value in improving the communication capacity of terahertz communication and effectively utilizing the working bandwidth.
In view of this, the present application is specifically proposed.
Disclosure of Invention
The invention aims to solve the technical problems that the existing terahertz super-surface modulator is single in working mode, few in current path and single in terahertz wave modulation function, and only one resonance point can be generated.
The invention is realized by the following technical scheme:
terahertz modulator based on T type and E type super surface resonance structure, including the dielectric substrate, include:
the resonant structure comprises a double-T-shaped resonant structure and a double-E-shaped resonant structure, wherein the double-T-shaped resonant structure is in mirror symmetry along the central line of the dielectric substrate so as to form a first control area for resonance on the dielectric substrate, and the double-E-shaped resonant structure is in mirror symmetry along the central line of the dielectric substrate so as to form a second control area for resonance on the dielectric substrate;
a modulation switch for changing a transmission coefficient of the terahertz wave at the resonance point;
the surface of the dielectric substrate is adhered with a metamaterial structure layer, and the dielectric substrate, the double-T-shaped resonant structure, the double-E-shaped resonant structure and the modulation switch are all adhered to the metamaterial structure layer.
In an alternative embodiment of the present application, the double "T" shaped resonant structure includes two first resonant structures, where any one of the first resonant structures includes a long metal arm and a short metal arm, the short metal arm is vertically connected to a middle portion of the long metal arm, so that the first resonant structure forms a T-shaped frame, and the short metal arms of the two T-shaped frames are disposed opposite to each other, so that a surface of the metamaterial structure layer forms a first control area.
In an alternative embodiment of the present application, the two first resonant structures are mirror symmetry with each other with a center point of the dielectric substrate as a symmetry point, where the two long metal arms have lengths of 215-243 μm and the two short metal arms have lengths of 130-160 μm.
In an optional embodiment of the present application, the double "E" type resonant structure includes two second resonant structures, where any one of the second resonant structures includes a first metal arm, two second metal arms and a third metal arm, the two second metal arms are respectively connected to ends of the first metal arm, a middle part of the first metal arm is connected to the third metal arm, the second metal arm and the third metal arm are parallel to each other, so that the second resonant structure is formed with a half-enclosure frame, and openings of the two half-enclosure frames are oppositely arranged, so that a second control area is formed on a surface of the metamaterial structure layer.
In an alternative embodiment of the present application, the spacing between the second metal arms is 15-30 μm, and the spacing between the two third metal arms, which are symmetrical to each other, is 35-45 μm.
In an alternative embodiment of the present application, a gap for placing the modulation switch is formed between the second metal arm of the double "E" type resonant structure and the long metal arm of the double "E" type resonant structure on the corresponding side, and the gap has a pitch of 25-35 μm.
In an optional embodiment of the present application, the modulation switch includes four first switches and two second switches, the first switches are respectively disposed at the gap, the second switches are respectively disposed at the gap where the first metal arm and the third metal arm of the dual "E" resonant structure are connected, the length of the first switch is 25-35 μm, and the length of the second switch is 10-15 μm.
In an alternative embodiment of the present application, a controllable active material is added at the modulation switch.
In an alternative embodiment of the present application, the dielectric substrate is a silicon carbide substrate, and has a thickness of 50-90 μm and a relative dielectric constant of 11.9.
In an alternative embodiment of the present application, the surface of the metamaterial structure layer is composed of metal Au, the thickness is 0.1-1 μm, and the conductivity is 4.561 ×10 7 。
Compared with the prior art, the invention has the following advantages and beneficial effects:
according to the terahertz modulator based on the T-shaped and E-shaped super-surface resonant structures, different current paths are respectively generated through the double T-shaped resonant structures and the double E-shaped resonant structures, so that two resonant frequencies can be generated, different frequency responses are generated by compensating resonance phenomena, two resonant points can be generated simultaneously, the richness of multiple operation modes of the terahertz modulator is greatly improved, on the basis, the modulation switches are added in the double T-shaped resonant structures and the double E-shaped resonant structures, the transmission coefficients of different electromagnetic wave frequencies can be regulated and controlled through the modulation switches, the modulation switches comprise the first switch and the second switch, and the effect of modulating terahertz waves is achieved through cooperation between the first switch and the second switch, so that the modulation of the terahertz waves is facilitated.
Drawings
In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the drawings that are needed in the examples will be briefly described below, it being understood that the following drawings only illustrate some examples of the present invention and therefore should not be considered as limiting the scope, and that other related drawings may be obtained from these drawings without inventive effort for a person skilled in the art. In the drawings:
fig. 1 is a schematic diagram of an overall structure of a modulator according to an embodiment of the present invention;
FIG. 2 is a graph showing the relationship between the transmission coefficient of a modulator and the thickness of a dielectric substrate according to an embodiment of the present invention;
FIG. 3 is a graph showing the relationship between the transmission coefficient of the modulator and the length of the third metal arm according to the embodiment of the present invention;
FIG. 4a is a graph showing the relationship between the transmission coefficient of a modulator and the length of a second metal arm according to an embodiment of the present invention;
FIG. 4b is a graph showing the relationship between the transmission coefficient of a modulator and the length of another second metal arm according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a modulator according to an embodiment of the present invention in an on state;
fig. 6 is a schematic diagram of a modulator in a closed state according to an embodiment of the present invention;
fig. 7 shows the transmittance under different on-off states according to an embodiment of the present invention.
In the drawings, the reference numerals and corresponding part names:
100-dielectric substrate, 200-double "E" resonant structure, 300-double "T" resonant structure, 510-first switch, 520-second switch.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, connected or integrally connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Examples
The electric control terahertz modulator can change the carrier distribution in the semiconductor material through an external electric field, so that the electromagnetic response of the super-surface structure to the terahertz wave is changed, and finally, the purpose of regulating and controlling the terahertz wave is achieved. A common way is to use a tunable material, and to change the physical properties of the tunable material by means of electronic control or the like, thereby changing the operating state of the modulator. The research shows that the super surface made of the metamaterial is a composite material with a sub-wavelength structure which is manually arranged, the electromagnetic property of the composite material can be arbitrarily designed by changing the geometric parameter of the composite material, and the composite material is very suitable for being used as a tunable material, however, in actual use, the existing terahertz super surface modulator has the defects of single working mode, few current paths, only one resonance point, single method, low utilization rate and the like. To solve the above problems, the present invention provides a terahertz modulator based on T-type and E-type super-surface resonance structures, as shown in fig. 1, including a dielectric substrate 100, and further including:
a resonant structure comprising a double "T" type resonant structure 300 and a double "E" type resonant structure 200, wherein the double "T" type resonant structure 300 is mirror-symmetrical along a center line of the dielectric substrate 100 such that a first control region for resonance is formed on the dielectric substrate 100, and the double "E" type resonant structure 200 is mirror-symmetrical along a center line of the dielectric substrate 100 such that a second control region for resonance is formed on the dielectric substrate 100;
a modulation switch for changing a transmission coefficient of the terahertz wave at the resonance point;
the surface of the dielectric substrate 100 is attached with a metamaterial structure layer, and the dielectric substrate 100, the double-T-shaped resonant structure 300, the double-E-shaped resonant structure 200 and the modulation switch are all attached to the metamaterial structure layer.
In this embodiment, by providing the dual "T" type resonant structure 300 and the dual "E" type resonant structure 200 on the super surface structure, different current paths are generated respectively, so that two resonant frequencies can be generated, and different frequency responses can be generated by compensating for the resonant phenomenon, so that two resonant points can be generated simultaneously, and the richness of multiple modes of the terahertz modulator is greatly improved. However, for the dual "E" structure, when the terahertz waves of different frequencies are perpendicularly incident into the second control region, the structure has no obvious resonance phenomenon when the electric field direction of the incident terahertz waves is along the Y-axis. When the polarized electric field of the incident terahertz wave is along the Y-axis, such resonance belongs to an inductance-capacitance (LC) resonance. The device generates different responses at different terahertz wave frequencies; and two resonances are formed in the first control region and the second control region respectively, so that two resonance frequency points are generated, and the transmission coefficients of the two resonance frequency points at 220GHz and 340GHz are small and are smaller than 0.1.
In addition, it should be noted that the preparation of the metamaterial structure and the method for attaching the metamaterial structure to the dielectric substrate 100 are all conventional technical means well known to those skilled in the art, and will not be described herein.
In an alternative embodiment of the present application, the dielectric substrate 100 is a silicon carbide substrate, and has a thickness of 50-90 μm and a relative dielectric constant of 11.9.
Specifically, in this embodiment, the unit structure of the device is as shown in fig. 1, and the substrate of the device is 70 μm thick silicon carbide, and the dielectric constant epsilon=11.9. The embodiment of the invention selects silicon carbide SiC as a substrate, because silicon carbide is more beneficial to improving the transmittance of the device and reducing the insertion loss compared with other materials. As shown in fig. 2, the equivalent inductance and equivalent capacitance are maximized when the substrate thickness is somewhere. When the thickness of the substrate changes from a fixed point to two sections, the interaction of the equivalent inductance and the equivalent capacitance gradually becomes smaller, and the resonance frequency becomes larger. Meanwhile, in the process of gradually reducing h, the Fabry-Perot effect is weakened, the interference peak is gradually reduced, and the interference peak hardly exists at 20 mu m. However, since the original resonant structure of the device is changed due to the too thin dielectric thickness at 20 μm, and the second resonance point is excessively shifted, it is preferable that the thickness of silicon carbide is 70 μm in this embodiment.
In an alternative embodiment of the present application, the surface of the metamaterial structure layer is composed of inert metal, the thickness is 0.1-1 μm, and the electrical conductivity is 4.561 ×107. Preferably, the thickness is 0.2 μm;
the inert metal may be Au, or the like, and preferably, the inert metal selected in this embodiment is Au, which is because Au has a lower resistance and higher conductivity than Ag, and thus is more suitable for application in plasma and optical metamaterial devices.
In an alternative embodiment of the present application, the dual "T" type resonant structure 300 includes two first resonant structures, where any one of the first resonant structures includes a long metal arm and a short metal arm, the short metal arm is vertically connected to the middle of the long metal arm, so that the first resonant structure forms a T-shaped frame, and the short metal arms of the two T-shaped frames are oppositely disposed, so that the surface of the metamaterial structure layer forms a first control area.
In an alternative embodiment of the present application, the two first resonant structures are mirror symmetry with each other with the center point of the dielectric substrate 100 as a symmetry point, where the two long metal arms have lengths of 215-243 μm and the two short metal arms have lengths of 130-160 μm.
Wherein, preferably, the length of two long metal arms is 230 μm, and the length of two short metal arms is 143 μm, thereby facilitating the formation of stable resonance.
In an alternative embodiment of the present application, the dual "E" resonant structure 200 includes two second resonant structures, where any one of the second resonant structures includes a first metal arm, two second metal arms and a third metal arm, the two second metal arms are respectively connected to ends of the first metal arm, a middle portion of the first metal arm is connected to the third metal arm, and the second metal arm and the third metal arm are parallel to each other, so that the second resonant structure is formed with a half-enclosure frame, and openings of the two half-enclosure frames are oppositely arranged, so that a second control area is formed on a surface of the metamaterial structural layer.
In an alternative embodiment of the present application, the spacing between the second metal arms is 15-30 μm, and the spacing between the two third metal arms, which are symmetrical to each other, is 35-45 μm.
Preferably, the distance between the second metal arms symmetrical to each other in the two resonant structures is 25 μm, and the distance between the third metal arms symmetrical to each other is 40 μm. As shown in fig. 5, in the double "E" type resonant structure 200, the second metal arms of one second resonant structure are respectively mirror-symmetrical with the second metal arms of the other second resonant structure, the corresponding second metal arms have a pitch of m1 and m2, the pitch refers to a distance between ends of the symmetrical second metal arms respectively, and in addition, the corresponding third metal arms have a pitch of m2, on the basis, fig. 3-5 are combined, wherein the transmission coefficient S21 curves 75-82 correspond to m2 varying from 25-60 μm. When m2 is gradually increased from the first 25 μm to 60 μm, the resonance point frequency is increased from 0.280THz to 0.357THz, and the transmission coefficient 21S is also gradually decreased at the resonance frequency point, and the resonance frequency point generated by dipole oscillation is slightly shifted. This is because the current decreases after the length increases, the equivalent inductance decreases, and the resonance point frequency increases accordingly. Although the resonance point at m2=35 μm (i.e., curve 80) is closest to 0.340THz, m2=40 μm is selected while considering the problem of modulation depth. As is apparent from fig. 4 and 5, the resonance point frequency gradually becomes smaller in the process that m1 gradually decreases from 25 μm to 15 μm. A decrease in m1 represents an increase in the spacing between the left and right metal strips, i.e., an increase in the opening, and an increase in the parallel plate capacitance, and therefore the resonance point frequency, decreases. m3 is similar to m 1. M1=m3=25 μm was chosen last, when the LC resonance point was closest to 0.340THz. It is found from experiments that when the present tuning device is used, the optimum structural parameters are as follows, a=260 μm, b=250 μm, l1=230 μm, l2=183 μm, l3=143 μm, m1=25 μm, m2=40 μm, m3=25 μm, d=30 μm, and the line width of the structure is 6 μm, so that the resonance formed in the two control regions can be ensured to be stable.
In an alternative embodiment of the present application, a gap for placing the modulation switch is formed between the second metal arm of the double "E" type resonant structure 200 and the long metal arm of the double "E" type resonant structure 200 on the corresponding side, and the gap has a pitch of 25-35 μm.
Preferably, the intermediate distance in this embodiment is 30. Mu.m; through setting up the interval, the modulation switch of convenient cooperation installation.
In an alternative embodiment of the present application, the modulation switch includes four first switches 510 and two second switches 520, the first switches 510 are respectively disposed at the gaps, the number of the second switches 520 are respectively disposed at the connection gaps between the first metal arm and the third metal arm of the dual "E" type resonant structure 200, the length of the first switches 510 is 25-35 μm, and the length of the second switches 520 is 10-15 μm.
Preferably, the length of the first switch 510 is 30 μm and the length of the second switch 520 is 12 μm in this embodiment. As shown in fig. 6, wherein the first switch 510 is 4 metal strips with a length of 30 μm; the second switch 520 is provided with an opening of 12 μm, 6 switch states of the structure are changed, and terahertz waves with different frequencies are vertically incident on the surface of the device again; at the moment, the transmission coefficient of the device to terahertz waves is not particularly different, and the transmission coefficient is about 0.8 in the frequency range of 200-400 GHz.
In an alternative embodiment of the present application, a controllable active material is added at the modulation switch. In this embodiment, the controllable active materials such as AlGaN, gaN, and the like are not further limited, and the state of the switch is controlled by controlling the number of carriers in the material, so as to regulate the transmission coefficients of the device at 220GHz and 340GHz, thereby achieving the purpose of modulating terahertz waves, wherein in this embodiment, the modulation depth at 220GHz is 95%, and the modulation depth at 340GHz is 92%.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the scope of the invention, but to limit the invention to the particular embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (6)
1. Terahertz modulator based on T-type and E-type super-surface resonance structures, comprising a dielectric substrate (100), characterized in that it comprises:
a resonant structure comprising a double "T" type resonant structure (300) and a double "E" type resonant structure (200), wherein the double "T" type resonant structure (300) is mirror symmetric along a center line of a dielectric substrate (100) such that the dielectric substrate (100) forms a first control region for resonance, and the double "E" type resonant structure (200) is mirror symmetric along a center line of the dielectric substrate (100) such that the dielectric substrate (100) forms a second control region for resonance;
the double-T-shaped resonant structure (300) comprises two first resonant structures, wherein any one of the first resonant structures comprises a long metal arm and a short metal arm, the short metal arm is vertically connected to the middle part of the long metal arm so that the first resonant structure forms a T-shaped frame, and the short metal arms of the two T-shaped frames are oppositely arranged so that the surface of a metamaterial structure layer forms a first control area;
the double-E-shaped resonant structure (200) comprises two second resonant structures, wherein any one of the second resonant structures comprises a first metal arm, two second metal arms and a third metal arm, the two second metal arms are respectively connected to the end parts of the first metal arm, the middle part of the first metal arm is connected with the third metal arm, the second metal arm and the third metal arm are mutually parallel, so that a half-surrounding frame is formed on the second resonant structure, and openings of the two half-surrounding frames are oppositely arranged, so that a second control area is formed on the surface of a metamaterial structure layer;
a modulation switch for changing a transmission coefficient of the terahertz wave at the resonance point; a gap for placing the modulation switch is formed between the second metal arm of the double-E-shaped resonant structure (200) and the long metal arm of the double-T-shaped resonant structure (300) on the corresponding side, and the interval of the gap is 25-35 mu m; the modulating switch comprises four first switches (510) and two second switches (520), wherein the first switches (510) are respectively arranged at the gaps, the number of the second switches (520) is respectively arranged at the connection gaps of the first metal arms and the third metal arms of the double-E-shaped resonant structure (200), the length of the first switches (510) is 25-35 mu m, and the length of the second switches (520) is 10-15 mu m;
the surface of the medium substrate (100) is adhered with a metamaterial structure layer, and the medium substrate (100), the double-T-shaped resonant structure (300), the double-E-shaped resonant structure (200) and the modulation switch are all adhered to the metamaterial structure layer.
2. Terahertz modulator based on T-type and E-type super-surface resonant structures according to claim 1, characterized in that the two first resonant structures are mirror-symmetrical to each other with the center point of the dielectric substrate (100) as the symmetry point, wherein the two long metal arms have a length of 215-243 μm and the two short metal arms have a length of 130-160 μm.
3. The terahertz modulator based on the T-type and E-type super-surface resonance structures according to claim 1, wherein the distance between the second metal arms is 15-30 μm, and the distance between the two third metal arms, which are symmetrical to each other, is 35-45 μm.
4. The terahertz modulator based on T-type and E-type super-surface resonance structures according to claim 1, wherein controllable active materials are added at the modulation switches.
5. The terahertz modulator based on the T-type and E-type super-surface resonance structures according to claim 1, characterized in that the dielectric substrate (100) is a silicon carbide substrate, the thickness is 50-90 μm, and the relative dielectric constant is 11.9.
6. The terahertz modulator based on T-type and E-type super-surface resonance structures according to claim 1, wherein the metamaterialThe surface of the material structure layer is composed of metal Au, the thickness is 0.1-1 mu m, and the conductivity is 4.561 multiplied by 10 7 。
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