CN102427150B - Terahertz-band metamaterial with three resonance absorption peaks - Google Patents
Terahertz-band metamaterial with three resonance absorption peaks Download PDFInfo
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- CN102427150B CN102427150B CN 201110226812 CN201110226812A CN102427150B CN 102427150 B CN102427150 B CN 102427150B CN 201110226812 CN201110226812 CN 201110226812 CN 201110226812 A CN201110226812 A CN 201110226812A CN 102427150 B CN102427150 B CN 102427150B
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Abstract
The invention relates to a terahertz-band metamaterial with three resonance absorption peaks, belonging to the technical field of electromagnetic function materials. The terahertz-band metamaterial comprises a substrate and metal resonance units periodically arranged on the surface of the substrate. Each metal resonance unit comprises an electric snap ring resonator, the middle part of the electric snap ring resonator is formed by oppositely connecting two same single metal snap rings, and each metal resonance unit further comprises two single metal snap rings connected with long edges of twosides of the electric snap ring resonator back to back. In each metal resonance unit, the central electric snap ring resonator is a resonator of a symmetric closed structure, and two side snap rings are resonators of asymmetric open structures, thus a three-resonance structure is realized. The terahertz-band metamaterial with the three resonance absorption peaks, provided by the invention, has three very obvious absorption peaks in the terahertz band, and the three absorption peaks are distinguished clearly. The terahertz-band metamaterial with the three resonance absorption peaks, provided by the invention, can be processed by a micro-electronics processing technique with low cost, and has very large potential application value in the field of terahertz-band communication (including switches, modems, filters and the like).
Description
Technical field
The invention belongs to function solenoid material technology field, relate to the super clever material of terahertz wave band.
Background technology
(Terahertz, THz) ripple is often referred to the electromagnetic wave of frequency in 0.1THz～10THz scope to Terahertz.On frequency, this wave band belongs to far infrared band between millimeter wave and infrared light; From energy, between electronics and photon.Because its unique frequency and energy response, terahertz electromagnetic wave has demonstrated wide application potential and value in fields such as mensuration, radar, remote sensing, Homeland Security and the high density data communication of material analysis, large biological molecule and transmission, atmosphere and environmental monitoring, medical diagnosiss.
Super clever material (Metamaterials) refers to a kind of artificial medium that constitutes is arranged on macroscopical elementary cell periodicity or aperiodicity ground with geometry in particular, and has special electromagnetism constitutive parameter.Its characteristic depends on its basic cell structure.By designing resonant element artificially, control it the response in outfield is realized wider ε and μ value, realize the non-existent special medium of nature.Resonant element among the Metamaterials is to embody the distinctive electromagnetic property of its structure by the response that externally adds electromagnetic wave, and wherein the resonance structure of mainly electric field in the electromagnetic wave partly being made response is called ELC.Resonance structure of the present invention is the ELC structure, electromagnetic wave is to the vertical incidence of metal resonant element, direction of an electric field is parallel to the metal resonant element, each resonant ring forms the charge and discharge process to the opening part equivalent capacity under the excitation of extra electric field, thereby realize the LC concussion, produce a plurality of resonance peaks.
Because Metamaterials can realize conductivity and the magnetic permeability born, many people utilize it to make multiple novel artificial materials such as left-handed medium, perfect lens, stealth material.And make Multi-ported device spare still in March, 2004 with Metamaterials, the multi resonant that people such as W.J.Padilla the relate to the Terahertz frequency range in the literature first Metamaterial structure of shaking, belong to the ELC structure, be double resonance, this structure is comparatively simple, be easy to make, but the consistency of double resonance amplitude is relatively poor.The present invention has realized utilizing Metamaterials to make three resonating devices of terahertz wave band first, and consistency is better, and resonance frequency is distinguished obviously.
Summary of the invention
The invention provides and a kind ofly have the super clever material at three resonance absorbing peaks at terahertz wave band, this material 0.38,0.58 and 0.74THz have three and distinguish obviously and absorb strong absworption peak.This invention has huge potential using value in fields such as the switch of following Terahertz communication, filter, modulator-demodulators.
Detailed technology scheme of the present invention is
A kind of super clever material of terahertz wave band with three resonance absorbing peaks shown in Fig. 1,3, comprises substrate base and is positioned at the metal resonant element that the substrate base surface periodic is arranged.Described metal resonant element is to be the asymmetrical graphic structure of the metallic film line strip one-tenth of d by live width; Establish the choma resonator by cable by what two identical single radial cut beckets were formed by connecting in opposite directions in the middle of this asymmetrical graphic structure comprises, the opening part width of establishing the choma resonator by cable is w
2, spacing is g
2This asymmetrical graphic structure also comprise two with establish the single radial cut becket that long limit, choma resonator both sides is connected dorsad by cable, one of them single radial cut becket opening part width is (d+w
1), aperture pitch is g
1, another single radial cut becket opening part width is that metallic film lines width d, aperture pitch are g
3, and g
3G
1The bulk metal resonant element long for Ax, wide be Ay, spacing is that spacing is (Ly-Ay) on (Lx-Ax), the Width on adjacent two metal resonant element length directions.
In the technique scheme, described substrate base material can be organic media material, ceramic medium material or semi-conducting material; Described metallic film wire member can be metal materials such as Au, Ag, Cu, Al.
Because size and the electromagnetic frequency of metal resonant element are inversely proportional to, so the metal resonant element of design is tens microns the order of magnitude.Because each metal resonant element is identical to electromagnetic response, then independent of one another between them if ignore the coupling between each metal resonant element, so on the whole electromagnetic wave is had same frequency response after the periodic arrangement.Each metal resonant element is to be made of and three resonant tanks have nothing in common with each other three resonant ring loops, if be inductance with the Metallic rod equivalence, the opening equivalence is electric capacity, then can obtain equivalent electric circuit as shown in Figure 2.Can draw it by theory calculating or emulation and have three resonance frequencies really.
Because terahertz electromagnetic wave has very high frequency, thereby it is very difficult to design the Multi-ported device spare of this wave band.At present the known material that terahertz electromagnetic wave is had many pass-band performances has only electrooptic crystal, and device poor effect and the price of using electrooptic crystal to make are very expensive.The super clever material in terahertz wave band provided by the present invention three resonance absorbing peaks has three very significantly absworption peaks at terahertz wave band, and distinguishes obviously between three resonance peaks.The present invention can utilize microelectronic processing technology process, cheap, have very big potential using value in the terahertz wave band communications field.
Description of drawings
Fig. 1 is the structural representation with the super clever material of terahertz wave band at three resonance absorbing peaks provided by the invention.
Fig. 2 is the equivalent circuit diagram of the metal resonant element of the super clever material of terahertz wave band with three resonance absorbing peaks provided by the invention.
Fig. 3 is the super clever material structure schematic diagram that has marked dimension mark provided by the invention.
Fig. 4 is emulation and the measured result of the transmission coefficient of the super clever material of terahertz wave band with three resonance absorbing peaks provided by the invention.
Embodiment
A kind of super clever material of terahertz wave band with three resonance absorbing peaks shown in Fig. 1,3, comprises substrate base and is positioned at the metal resonant element that the substrate base surface periodic is arranged.Described metal resonant element is to be the asymmetrical graphic structure of the metallic film line strip one-tenth of d by live width; Establish the choma resonator by cable by what two identical single radial cut beckets were formed by connecting in opposite directions in the middle of this asymmetrical graphic structure comprises, the opening part width of establishing the choma resonator by cable is w
2, spacing is g
2This asymmetrical graphic structure also comprise two with establish the single radial cut becket that long limit, choma resonator both sides is connected dorsad by cable, one of them single radial cut becket opening part width is (d+w
1), aperture pitch is g
1, another single radial cut becket opening part width is that metallic film lines width d, aperture pitch are g
3, and g
3G
1The bulk metal resonant element long for Ax, wide be Ay, spacing is that spacing is (Ly-Ay) on (Lx-Ax), the Width on adjacent two metal resonant element length directions.
Described substrate base adopts that 0.5mm is thick, the monocrystalline silicon in 100 crystal orientation (monocrystalline silicon is better to THz electromagnetic wave permeability, conductivity greater than 2000 Ω cm, real dielectric constant be 11.9, magnetic permeability is 1); Described metal membrane line strip adoption 500nm is thick, conductivity is 3.72 * 10
7The metallic aluminium of S/m.
As shown in Figure 3, the concrete parameter of each device is: a
1=14 μ m, a
2=a
3=10 μ m, a
4=8 μ m, g
1=4 μ m, g
2=8 μ m, g
3=24 μ m, w
1=8 μ m, w
2=15 μ m, d=4 μ m, Ax=62 μ m, Ay=66 μ m, Lx=76 μ m, Ly=80 μ m.
The above-mentioned super clever material of terahertz wave band with three resonance absorbing peaks obtains its transmission spectrum as shown in Figure 4 through the emulation of CST simulation softward, 0.36,0.55 and 0.76THz have three and distinguish tangible absworption peaks, and the absorption intensity of three absworption peaks is close to 90%; Adopt terahertz time-domain spectroscopic technology (THz-TDS) system, the super clever material of terahertz wave band to three resonance absorbing peaks of actual fabrication is tested repeatedly, draw its frequency domain spectra as shown in Figure 4 by fast fourier transform, its resonance frequency is respectively 0.38,0.58 and 0.74THz, is respectively 5.3%, 5.2% and 2.7% with design phase ratio error.Absorption coefficient is respectively 77%, 75% and 58%.The absorption coefficient error is bigger, and the error that the dielectric constant of its reason and substrate, the conductivity of metal, experimental measurement etc. bring is relevant.
Claims (3)
1. the super clever material of terahertz wave band with three resonance absorbing peaks comprises substrate base and is positioned at the metal resonant element that the substrate base surface periodic is arranged; Described metal resonant element is to be the asymmetrical graphic structure of the metallic film line strip one-tenth of d by live width; Establish the choma resonator by cable by what two identical single radial cut beckets were formed by connecting in opposite directions in the middle of this asymmetrical graphic structure comprises, the opening part width of establishing the choma resonator by cable is w
2, spacing is g
2This asymmetrical graphic structure also comprise two with establish the single radial cut becket that long limit, choma resonator both sides is connected dorsad by cable, one of them single radial cut becket opening part width is (d+w
1), aperture pitch is g
1, another single radial cut becket opening part width is that metallic film lines width d, aperture pitch are g
3, and g
3G
1The bulk metal resonant element long for Ax, wide be Ay, spacing is that spacing is (Ly-Ay) on (Lx-Ax), the Width on adjacent two metal resonant element length directions; W wherein
1For the opening part width is (d+w
1) the single radial cut becket surpass the opening size of metallic film lines width d, Lx is the single Cycle Length that the metal resonant element is arranged at the substrate base surface periodic, Ly is the single periodic width that the metal resonant element is arranged at the substrate base surface periodic.
2. the super clever material of terahertz wave band with three resonance absorbing peaks according to claim 1 is characterized in that described substrate base material is organic media material, ceramic medium material or semi-conducting material.
3. the super clever material of terahertz wave band with three resonance absorbing peaks according to claim 1 is characterized in that described metallic film wire member is Au, Ag, Cu or Al.
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| CN 201110226812 CN102427150B (en) | 2011-08-09 | 2011-08-09 | Terahertz-band metamaterial with three resonance absorption peaks |
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| CN102427150B true CN102427150B (en) | 2013-09-25 |
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102800986B (en) * | 2012-08-02 | 2014-09-10 | 中国科学院上海微系统与信息技术研究所 | Terahertz dual-band metamaterial based on electric resonance |
| CN103018927B (en) * | 2012-12-24 | 2014-12-10 | 中国计量学院 | Terahertz wave switch of eight-claw ring structure |
| CN103280635A (en) * | 2013-04-28 | 2013-09-04 | 四川大学 | Enhancing system for terahertz field effect |
| CN104570402B (en) * | 2013-10-12 | 2018-05-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Spatial light modulator based on metamaterial structure and preparation method thereof |
| CN104020588B (en) * | 2014-06-05 | 2017-02-22 | 哈尔滨工程大学 | Temperature control switch based on polarization conversion and phase change principle |
| CN105116489B (en) * | 2015-09-15 | 2018-08-21 | 中国计量学院 | A kind of high Q resonance device of asymmetric openings ring Meta Materials waveguiding structure |
| CN106099381B (en) * | 2016-08-12 | 2019-02-05 | 电子科技大学 | The four resonance terahertz wave band Meta Materials based on the asymmetric coupled structure of double ELC |
| CN106450613B (en) * | 2016-12-07 | 2020-08-07 | 桂林电子科技大学 | Double-band dynamically adjustable terahertz band-pass filter |
| CN107765450A (en) * | 2017-10-17 | 2018-03-06 | 北京邮电大学 | Broadband Terahertz line polarization wave asymmetric transmission device based on Meta Materials |
| CN107809007A (en) * | 2017-11-02 | 2018-03-16 | 安阳师范学院 | A kind of multiband Terahertz Meta Materials wave absorbing device |
| CN108718006B (en) * | 2018-04-24 | 2020-08-18 | 西安理工大学 | Three-band topological metamaterial terahertz wave absorber |
| CN115145056B (en) * | 2022-08-10 | 2023-05-09 | 重庆邮电大学 | Terahertz modulator based on T-shaped and E-shaped super-surface resonance structures |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101702067A (en) * | 2009-10-29 | 2010-05-05 | 电子科技大学 | Terahertz plane adsorbing material |
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|---|---|---|---|---|
| CN101702067A (en) * | 2009-10-29 | 2010-05-05 | 电子科技大学 | Terahertz plane adsorbing material |
Non-Patent Citations (2)
| Title |
|---|
| 《太赫兹多谐振Metamaterials》的研究与设计;凌伟;《现代电子技术》;20110115;第34卷(第2期);133-135 * |
| 凌伟.《太赫兹多谐振Metamaterials》的研究与设计.《现代电子技术》.2011,第34卷(第2期),133-135. |
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