CN102637949A - Double-frequency terahertz wave antenna with double-dipole structure - Google Patents
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- CN102637949A CN102637949A CN2012101273844A CN201210127384A CN102637949A CN 102637949 A CN102637949 A CN 102637949A CN 2012101273844 A CN2012101273844 A CN 2012101273844A CN 201210127384 A CN201210127384 A CN 201210127384A CN 102637949 A CN102637949 A CN 102637949A
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Abstract
The invention discloses a double-frequency terahertz wave antenna with a double-dipole structure. The antenna comprises a double-dipole photoconduction antenna layer and a matrix, wherein the double-dipole photoconduction antenna layer is connected with the matrix; the connecting line of the geometric center of the double-dipole photoconduction antenna layer and the geometric center of the matrix is vertical to the connected plane of the double-dipole photoconduction antenna layer and the matrix; a signal input end is positioned at the center position of the double-dipole photoconduction antenna layer; a signal output end corresponds to the signal input end and is positioned at the center position of the matrix; the double-dipole photoconduction antenna layer comprises a double-dipole structure and a transmission line structure, wherein the double-dipole structure comprises a first right angle structure, a second right angle structure, a third right angle structure and a fourth right angle structure, and the four right angle structures are centrally symmetrical and identical; and the transmission line structure comprises a choking coil structure and a cross electrode structure, wherein the cross electrode structure is embedded into the middle of the choking coil structure. The double-frequency terahertz wave antenna with the double-dipole structure has the advantages of simple structure, small size, small volume, light weight and the like, is convenient to manufacture and is easy to integrate.
Description
Technical field
The invention belongs to the THz wave communications field, relate in particular to a kind of double frequency THz wave antenna of quadripole structure.
Background technology
(Terahertz wave, THz) ripple is meant that frequency is positioned at 0.1-10THz (1THz=10 to Terahertz
12Hz) electromagnetic radiation between is between microwave and infrared band.Owing to have advantages such as penetration capacity is strong, photon energy is low, wide spectrum, make it extremely important application prospect arranged in fields such as the biopsy of the nondestructive inspection of safety inspection, material and structure, biological tissue, radio communications.The THz wave radio communication had both combined the advantage of microwave communication and lightwave communication as a kind of emerging communication mode, had again that bandwidth is big, transmission rate is high, an advantage such as good confidentiality, antijamming capability are strong.Carry out the research of THz wave radio communication,, expand wireless communication bandwidth, have very high strategic importance for the bandwidth-hogging resource.At present, fields such as high speed short-distance wireless communication, the access of indoor wireless safety and space communication are used it in many tissues of developed countries such as the U.S., Europe, Japan and the theory and practice that research institution has carried out the THz wave radio communication research.
The THz wave antenna is one of indispensable function element in the Terahertz radio communication, and important effect is arranged in practical application.The THz wave antenna structure mainly contains structures such as dipole, butterfly, logarithm period at present; Though the processing technology thereof of these antenna is comparative maturity; Often be difficult to satisfy the demand of THz wave communications applications, therefore press for the demand simple in structure, that size is little, the THz wave dual-band antenna being convenient to make satisfies the THz wave communications applications that works out by their characteristic.
Summary of the invention
The present invention is directed to the deficiency of prior art, a kind of double frequency THz wave antenna of quadripole structure is provided.
The present invention includes quadripole photoconductive antenna layer and matrix, quadripole photoconductive antenna layer is connected with matrix, and the line of quadripole photoconductive antenna layer geometric center and matrix geometric center is perpendicular to both planes that joins.Signal input part is positioned at the center of quadripole photoconductive antenna layer, and signal output part is corresponding with signal input part, is positioned at the center of matrix.
Quadripole photoconductive antenna layer comprises quadripole structure and transmission line structure, and the quadripole structure comprises first right-angle structure, second right-angle structure, the 3rd right-angle structure, the 4th right-angle structure, these four right-angle structure center symmetries, and structure is identical; Transmission line structure comprises choke structure and interdigitated electrode design; Interdigitated electrode design embeds the choke structure middle; First right-angle structure and second right-angle structure constitute a dipole structure; The right angle end on right angle end on right-angle side of first right-angle structure, right-angle side of second right-angle structure and the junction of choke structure are respectively first tie point and second tie point; And two right-angle sides at the end place, two right angles that is connected with first tie point, second tie point are on same straight line, and another right-angle side of first right-angle structure is parallel with another right-angle side of second right-angle structure; The 3rd right-angle structure and the 4th right-angle structure constitute another dipole structure; The right angle end on right angle end on right-angle side of the 3rd right-angle structure, right-angle side of the 4th right-angle structure and the junction of choke structure are respectively the 3rd tie point and the 4th tie point; And two right-angle sides at the end place, two right angles that is connected with the 3rd tie point, the 4th tie point are on same straight line, and another right-angle side of the 3rd right-angle structure is parallel with another right-angle side of the 4th right-angle structure.
The right-angle side at the end place, right angle that first right-angle structure is connected with first tie point is parallel with the right-angle side at the end place, right angle that the 3rd right-angle structure is connected with the 3rd tie point, and another right-angle side of another right-angle side of first right-angle structure and the 3rd right-angle structure is on same straight line; The right-angle side at the end place, right angle that second right-angle structure is connected with second tie point is parallel with the right-angle side at the end place, right angle that the 4th right-angle structure is connected with the 4th tie point, and another right-angle side of another right-angle side of second right-angle structure and the 4th right-angle structure is on same straight line.
The material of described quadripole photoconductive antenna layer is a gold, and matrix has double-decker, and the matrix upper strata of facing mutually with quadripole photoconductive antenna layer is Arlon AR600, and lower floor is PTFE.
The cycle f of described choke structure is 25 ~ 100 μ m.
The electrode length of described interdigitated electrode design is 4 ~ 20 μ m, and electrode spacing is 0.4 ~ 2 μ m, and electrode spacing reduces metal filled coefficient greater than electrode width, the coupling efficiency that raising THz wave antenna is imported signal.
Beneficial effect of the present invention is following:
The present invention mainly is applicable to THz wave communication, realizes the radiation of THz wave double frequency.That the present invention also has is simple in structure, size is little, volume is little, in light weight, be convenient to make and be easy to advantages such as integrated.
Description of drawings
Fig. 1 is a perspective view of the present invention;
Fig. 2 is the side-looking structural representation of Fig. 1;
Fig. 3 is the plan structure sketch map of Fig. 1;
Fig. 4 is a choke structure sketch map of the present invention;
Fig. 5 is an interdigitated electrode design sketch map of the present invention;
Fig. 6 is a performance curve of the present invention;
Among the figure, signal input part 1, signal output part 2, quadripole photoconductive antenna layer 3, matrix 4, first right-angle structure 5, second right-angle structure 6, the 3rd right-angle structure 7, the 4th right-angle structure 8, choke structure 9, interdigitated electrode design 10.
Embodiment
Below in conjunction with accompanying drawing the present invention is described further.
As shown in Figure 1; A kind of double frequency THz wave antenna of quadripole structure; Comprise quadripole photoconductive antenna layer 3 and matrix 4, quadripole photoconductive antenna layer 3 is connected with matrix 4, and the line of quadripole photoconductive antenna layer 3 geometric center and matrix 4 geometric centers is perpendicular to both planes that joins.Signal input part 1 is positioned at the center of quadripole photoconductive antenna layer 3, and signal output part 2 is corresponding with signal input part, is positioned at the center of matrix 4.
As shown in Figure 3; Quadripole photoconductive antenna layer 3 comprises quadripole structure and transmission line structure; The quadripole structure comprises first right-angle structure 5, second right-angle structure 6, the 3rd right-angle structure 7, the 4th right-angle structure 8, these four right-angle structure centers symmetries, and structure is identical; Transmission line structure comprises choke structure 9 and interdigitated electrode design 10; Interdigitated electrode design 10 embeds choke structure 9 middles; First right-angle structure 5 and second right-angle structure 6 constitute a dipole structure; The right angle end on right angle end on 5 one right-angle sides of first right-angle structure, 6 one right-angle sides of second right-angle structure and the junction of choke structure 9 are respectively first tie point and second tie point; And two right-angle sides at the end place, two right angles that is connected with first tie point, second tie point are on same straight line, and another right-angle side of first right-angle structure 5 is parallel with another right-angle side of second right-angle structure 6; The 3rd right-angle structure 7 and the 4th right-angle structure 8 constitute another dipole structure; The right angle end on right angle end on 7 one right-angle sides of the 3rd right-angle structure, 8 one right-angle sides of the 4th right-angle structure and the junction of choke structure 9 are respectively the 3rd tie point and the 4th tie point; And two right-angle sides at the end place, two right angles that is connected with the 3rd tie point, the 4th tie point are on same straight line, and another right-angle side of the 3rd right-angle structure 7 is parallel with another right-angle side of the 4th right-angle structure 8.
The right-angle side at the end place, right angle that first right-angle structure 5 is connected with first tie point is parallel with the right-angle side at the end place, right angle that the 3rd right-angle structure 7 is connected with the 3rd tie point, and another right-angle side of first right-angle structure, 5 another right-angle sides and the 3rd right-angle structure 7 is on same straight line; The right-angle side at the end place, right angle that second right-angle structure 6 is connected with second tie point is parallel with the right-angle side at the end place, right angle that the 4th right-angle structure 8 is connected with the 4th tie point, and another right-angle side of second right-angle structure, 6 another right-angle sides and the 4th right-angle structure 8 is on same straight line.
As shown in Figure 2, the material of described quadripole photoconductive antenna layer 3 is a gold, and matrix 4 has double-decker, and matrix 4 upper stratas of facing mutually with quadripole photoconductive antenna layer 3 are Arlon AR600, and lower floor is PTFE.
As shown in Figure 4, the cycle f of described choke structure 9 is 25 ~ 100 μ m.
As shown in Figure 5, the electrode length j of described interdigitated electrode design 10 is 4 ~ 20 μ m, and electrode spacing i is 0.4 ~ 2 μ m, and electrode spacing i reduces metal filled coefficient greater than electrode width k, the coupling efficiency that raising THz wave antenna is imported signal.
The course of work of the present invention is following:
Signal gets into from the interdigitated electrode design 10 of quadripole photoconductive antenna layer 3; Substrate material surface at the crossed electrode gap area forms photo-generated carrier; Then charge carrier quickens and discharges the form of the static potential energy ether Hertz wave that stores; Again via four centrosymmetric first right-angle structures 5 in the quadripole structure, second right-angle structure 6, the 3rd right-angle structure 7, the 4th right-angle structure 8 resonance; Choke structure 9 filtering through arriving signal output 2 after matrix 4 transmission, realize the radiation of double frequency THz wave.
Four center symmetry right-angle structure parameters of quadripole structure are: two right-angle side length are respectively 237.5 μ m and 31 μ m; Width is 9 μ m, and the distance between first right-angle structure 5 and the 3rd right-angle structure 7, second right-angle structure 6 and the 4th right-angle structure 8 is 25 μ m.The parameter of choke structure is: width is 1 μ m, and the gap is 30 μ m, highly is 40 μ m, and cycle f is 50 μ m.The interdigitated electrode design parameter is: i=1.5 μ m, j=18 μ m, k=0.5 μ m.The basis material upper strata is Arlon AR600, and thickness is 100 μ m, and dielectric constant is 6.0, and lower floor is PTFE, and thickness is 300 μ m, and dielectric constant is 2.08.As shown in Figure 6, the resonant frequency point of this THz wave dual-band antenna is 0.2 and 0.65THz, the return loss S of two resonant frequency points
11All less than-25dB.
Claims (1)
1. the double frequency THz wave antenna of a quadripole structure comprises quadripole photoconductive antenna layer and matrix, it is characterized in that:
Quadripole photoconductive antenna layer is connected with matrix; And the line of quadripole photoconductive antenna layer geometric center and matrix geometric center is perpendicular to both planes that joins; Signal input part is positioned at the center of quadripole photoconductive antenna layer; Signal output part is corresponding with signal input part, is positioned at the center of matrix;
Quadripole photoconductive antenna layer comprises quadripole structure and transmission line structure, and the quadripole structure comprises first right-angle structure, second right-angle structure, the 3rd right-angle structure, the 4th right-angle structure, these four right-angle structure center symmetries, and structure is identical; Transmission line structure comprises choke structure and interdigitated electrode design; Interdigitated electrode design embeds the choke structure middle; First right-angle structure and second right-angle structure constitute a dipole structure; The right angle end on right angle end on right-angle side of first right-angle structure, right-angle side of second right-angle structure and the junction of choke structure are respectively first tie point and second tie point; And two right-angle sides at the end place, two right angles that is connected with first tie point, second tie point are on same straight line, and another right-angle side of first right-angle structure is parallel with another right-angle side of second right-angle structure; The 3rd right-angle structure and the 4th right-angle structure constitute another dipole structure; The right angle end on right angle end on right-angle side of the 3rd right-angle structure, right-angle side of the 4th right-angle structure and the junction of choke structure are respectively the 3rd tie point and the 4th tie point; And two right-angle sides at the end place, two right angles that is connected with the 3rd tie point, the 4th tie point are on same straight line, and another right-angle side of the 3rd right-angle structure is parallel with another right-angle side of the 4th right-angle structure;
The right-angle side at the end place, right angle that first right-angle structure is connected with first tie point is parallel with the right-angle side at the end place, right angle that the 3rd right-angle structure is connected with the 3rd tie point, and another right-angle side of another right-angle side of first right-angle structure and the 3rd right-angle structure is on same straight line; The right-angle side at the end place, right angle that second right-angle structure is connected with second tie point is parallel with the right-angle side at the end place, right angle that the 4th right-angle structure is connected with the 4th tie point, and another right-angle side of another right-angle side of second right-angle structure and the 4th right-angle structure is on same straight line;
The material of described quadripole photoconductive antenna layer is a gold, and matrix has double-decker, and the matrix upper strata of facing mutually with quadripole photoconductive antenna layer is Arlon AR600, and lower floor is PTFE;
The cycle f of described choke structure is 25 ~ 100 μ m;
The electrode length of described interdigitated electrode design is 4 ~ 20 μ m, and electrode spacing is 0.4 ~ 2 μ m, and electrode spacing reduces metal filled coefficient greater than electrode width.
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103236578A (en) * | 2013-03-28 | 2013-08-07 | 中国科学院福建物质结构研究所 | Terahertz radiation enhanced photoconduction antenna |
CN105811072A (en) * | 2016-05-13 | 2016-07-27 | 东南大学 | High-impedance and high-gain antenna and graphene terahertz detector thereof |
WO2017032337A1 (en) * | 2015-08-27 | 2017-03-02 | 鲁勇 | Universal internet of things antenna |
CN109768382A (en) * | 2018-12-28 | 2019-05-17 | 北京航空航天大学 | Array terahertz emission source and its manufacturing method |
CN109888482A (en) * | 2018-12-28 | 2019-06-14 | 北京航空航天大学 | A kind of pulse THz source and its manufacturing method |
CN112510352A (en) * | 2020-11-04 | 2021-03-16 | 西南科技大学 | Terahertz wave radiation method and system of microstructure photoconductive antenna |
CN113687463A (en) * | 2021-08-23 | 2021-11-23 | 浙江大学 | Terahertz photoconductive antenna |
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US7215284B2 (en) * | 2005-05-13 | 2007-05-08 | Lockheed Martin Corporation | Passive self-switching dual band array antenna |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103236578A (en) * | 2013-03-28 | 2013-08-07 | 中国科学院福建物质结构研究所 | Terahertz radiation enhanced photoconduction antenna |
WO2017032337A1 (en) * | 2015-08-27 | 2017-03-02 | 鲁勇 | Universal internet of things antenna |
CN105811072A (en) * | 2016-05-13 | 2016-07-27 | 东南大学 | High-impedance and high-gain antenna and graphene terahertz detector thereof |
CN109768382A (en) * | 2018-12-28 | 2019-05-17 | 北京航空航天大学 | Array terahertz emission source and its manufacturing method |
CN109888482A (en) * | 2018-12-28 | 2019-06-14 | 北京航空航天大学 | A kind of pulse THz source and its manufacturing method |
CN112510352A (en) * | 2020-11-04 | 2021-03-16 | 西南科技大学 | Terahertz wave radiation method and system of microstructure photoconductive antenna |
CN113687463A (en) * | 2021-08-23 | 2021-11-23 | 浙江大学 | Terahertz photoconductive antenna |
CN113687463B (en) * | 2021-08-23 | 2022-09-23 | 浙江大学 | Terahertz photoconductive antenna |
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Application publication date: 20120815 |