CN104950477B - A kind of multi-channel terahertz ripple modulator approach and system - Google Patents
A kind of multi-channel terahertz ripple modulator approach and system Download PDFInfo
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- 229910021389 graphene Inorganic materials 0.000 description 5
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- 230000003287 optical effect Effects 0.000 description 1
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Abstract
The present invention relates to a kind of multi-channel terahertz ripple modulator approach, incident THz wave turns into collimated wave beam after THz wave collimater, several independent modulation channels modules that collimated wave beam sequentially enters superposition carry out independent modulation, each independent modulation channels module output separate modulated signals, output each separate modulated signals again by the THz wave passage combiner in modulation channels module successively combining after, it is unified to be exported from System Outlet, there is clutter absorption plant in the independent modulation channels module with THz wave passage combiner.System is made up of a variety of different types of terahertz wave modulator modular units, any combination, is very easily realized extension or is reduced the purpose of the port number of modulated THz wave；Realize to special modality（Wave band）The device such as selective modulation function, wave absorbing device use, then the interference of the THz wave of clutter or non-interesting wave band is further reduced, so as to further optimizing signal to noise ratio.
Description
Technical field
The present invention relates to a kind of THz wave communication technology, more particularly to a kind of multi-channel terahertz ripple modulator approach and it is
System.
Background technology
THz wave is between an infrared electromagnetic wave frequency range between microwave, generally defines 0.1THz~10THz
For " THz Gap ", i.e. terahertz wave band.The electromagnetic wave of this wave band has the directionality of visible ray and the penetration capacity of microwave concurrently.
The wave band, which has, carries the characteristics such as informative, high temporal and spatial coherence, low photon energy, in astronomy, biology, computer, leads to
The scientific domains such as letter have huge application value.With the depth understanding to THz wave and Terahertz Technology, Terahertz
Technology plays act foot in the field such as biomedicine, safety monitoring, nondestructive detecting, spectrum and imaging technique and military project radar
The effect of weight.Terahertz Technology further develops so that and produce and detection THz wave has obtained preferably solving, but
How effectively, it is also to be solved expeditiously to manipulate THz wave.And solve this problem, and further develop THz wave
Section, all it be unable to do without Terahertz function element.A crucial portion of the Terahertz modulator as manipulation terahertz signal Transmission system
Part, further application of its correlative study to Terahertz Technology are significant, and its application mainly communicates in Terahertz,
The many aspects such as terahertz imaging and sensing.Therefore the development of terahertz wave modulator also attention always.However, due to
Natural material is very faint to the electromagnetic response of terahertz wave band, it is difficult to be applied to manipulate THz wave, thus compared to
The rapid development of terahertz sources and Detection Techniques, the technology for manipulating Terahertz but seem and made slow progress.1999, Pendry was carried
Split ring resonator is gone out（SRR）This concept, Meta Materials（Metamaterials, MMs）Appearance, further promote terahertz
The hereby development of technology, particularly, the development of Terahertz function element.Metamaterial can by it is a kind of it is novel in a manner of realize
Regulation and control to electromagnetic wave, and adjust its resonant frequency, therefore THz wave by changing Metamaterials physical dimension
Section Metamaterials is but easily achieved.
Terahertz wave modulator can be divided into according to different modulation systems, light-operated Terahertz modulator, automatically controlled Terahertz
The Terahertz modulator of wave modulator, temperature control terahertz wave modulator, magnetic control Terahertz modulator and Mechanical course.It is automatically controlled too
Hertz wave modulator is the one kind for being easiest to be integrated in chip top in five kinds of modulators, and it is attached to Semiconductor substrate actually
On MMs, its strength of resonance can be adjusted by extrinsic motivated, and then adjust its transmissison characteristic.Automatically controlled terahertz wave modulator
It can be integrated on chip, this will have important application in Terahertz short distance secure communication etc..2006, H-T Chen
Etc. an automatically controlled terahertz wave modulator based on MMS is proposed, contact of the device surface metal with semiconductor base is with regard to common
Ground forms an equivalent Schottky diode (Schottkg Diode), loads Ohmic contact of certain voltage in device
Between device architecture, it is possible to achieve the modulation to the transmissivity of incident THz wave.2009, O. Paul were similarly proposed
A kind of automatically controlled terahertz wave modulator based on Meta Materials, but its device has and polarizes unrelated characteristic.2004, graphite
Alkene（Graphene）Appearance provide another platform for automatically controlled terahertz wave modulator.2014, X. He proposed one
The individual automatically controlled terahertz wave modulator based on graphene, by loading bias voltage on surface metal and graphene substrate,
By the fermi level for changing graphene（Fermi level）, and then the concentration class of carrier concentration in graphene is changed, most
The transmissivity of the THz wave of the device of transmission is changed eventually.However, it is mentioned above to also have market study to obtain it is automatically controlled
Terahertz wave modulator all mostly just only has a service aisle, i.e., only an independent frequency range can become modulation.And lead to
Letter field usually requires to carry out independent modulation to the signal of each frequency range.In this respect, these above-mentioned modulation devices are just
It often can not directly meet the application demand of correlation.
The content of the invention
Be only capable of modulation one the present invention be directed to existing automatically controlled terahertz wave modulator or linkage modulate multiple frequency ranges without
Independently modulated problem can be carried out to multiple frequency ranges respectively, it is proposed that a kind of passage THz wave modulator approach and system, for
The demand of the communications field, two kinds of technologies are modulated with reference to spatial modulation and integrated chip, dexterously realize and possess multiband independence
The THz wave modulating system of modulation capability.
The technical scheme is that：A kind of multi-channel terahertz ripple modulator approach, incident THz wave pass through terahertz
Hereby turn into collimated wave beam after ripple collimater, several independent modulation channels modules that collimated wave beam sequentially enters superposition carry out independent tune
System, each independent modulation channels module output separate modulated signals, each separate modulated signals of output pass through modulation channels again
THz wave passage combiner in module is successively after combining, unified to be exported from System Outlet, band THz wave passage combining
There is clutter absorption plant in the independent modulation channels module of device.
The modulating system of the multi-channel terahertz ripple modulator approach, including 3 independent modulation channels moulds being sequentially overlapped
Left and right is placed in first respectively for block and THz wave collimater, the first THz wave channel to channel adapter and the first terahertz wave modulator
First independent modulation channels module of composition in modulation channels module packaging cartridge；Second THz wave channel to channel adapter, integrate too
Left, center, right is placed in composition second in the second modulation channels module respectively for hertz wave modulator, the first THz wave passage combiner
Independent modulation channels module；Left and right is placed in the 3rd tune respectively for second terahertz wave modulator, the second THz wave passage combiner
The 3rd independent modulation channels module of composition in channel module processed；THz wave collimater, the first THz wave channel to channel adapter,
Second THz wave channel to channel adapter, the second terahertz wave modulator are from bottom to up on the same axis；First THz wave is adjusted
Device processed, the first THz wave passage combiner, the second THz wave passage combiner are from bottom to up on the same axis, incident
THz wavef o Turn into collimated wave beam after THz wave collimater, collimated wave beam inputs first independent modulation channels module
In the first THz wave channel to channel adapter separated, a branch of THz wavef 1 Selective reflecting is adjusted to the first THz wave
Device processed is modulated tof 1 ’ , another beam is transmitted in second independent modulation channels module, by the second THz wave channel selecting
Device is separated, a branch of THz wavef n Reflection is modulated to by integrated terahertz wave modulatorf n ’ , another beamf R It is transmitted to
In three independent modulation channels modules, it is adjusted to by the second terahertz wave modulatorf R ’ , first independent modulation channels module
THz wave after the modulation of outputf 1 ’ After the second independent modulation channels module modulationf n ’ , closed by the first THz wave passage
Road device, which is combined, to be output in the 3rd independent modulation channels module, then passes through the second THz wave passage combiner and the 3rd
After independent modulation channels module modulationf R ’ It is combined, it is unified to be exported from the 3rd independent modulation channels modular outlets, second
With in the 3rd modulation channels module packaging cartridge also have clutter absorption plant.
3 independent modulation channels modules can arbitrarily select two superpositions and THz wave collimater composition system.
3 independent modulation channels modules can arbitrarily select one individually to form system with THz wave collimater.
The THz wave channel to channel adapter is the spatial filter based on metamaterial, need to be modulated too with corresponding
Resonance coupling occurs for Hertz wave.
The terahertz wave modulator is automatically controlled galvanometer.
The integrated terahertz wave modulator is the automatically controlled terahertz wave modulator based on semiconductor.
The THz wave passage combiner is the spatial filter based on metamaterial, need to be modulated too with corresponding
Resonance coupling occurs for Hertz wave.
The modulation channels module packaging cartridge provides the combined and spliced window and locking device between module and module, adjusts
The control circuit of each modulation device is also laid in channel module packaging cartridge processed, still can work independently when realizing that module is split.
The beneficial effects of the present invention are：Passage THz wave modulator approach and system of the present invention, it is a kind of modular
Dexterous system, the purpose of the respective independent operation of multi-channel terahertz ripple can be achieved；System is by a variety of different types of THz waves
Modulator block unit is formed, and associated modulation module can be needed to be combined according to user, and certain wave is directed to be formed
The THz wave modulating system that section is modulated, the system combined can be simple free space binary channels THz wave
Modulating system or the modulating system for comprising only integrated single multi- passage terahertz wave modulator；Side of the present invention
Method and system additionally provide the sufficient expandability of multi-channel terahertz ripple modulating system, for that with system, can also pass through
The mode of add drop modulation module, very easily realize extension or reduce the purpose of the port number of modulated THz wave；And its
In the integrated automatically controlled terahertz wave modulator based on metamaterial, the side of preferred cell structure snd size can be passed through again
Formula, realize to special modality（Wave band）Selective modulation function, its passage（Wave band）Selection can very simply by
Change the mode of device architecture or physical dimension to realize；The device design of the present invention is to be based on " antistructure "（Main structure list
Member is to allow specific band THz wave to pass through, and periphery is then covered by metal so as to limit the THz wave of its non-selected wave band
It is current）, more effectively completely cut off the THz wave of non-selected wave band, so as to greatly improve the signal to noise ratio of system；And inhale
The use of the devices such as ripple device, then the interference of the THz wave of clutter or non-interesting wave band is further reduced, so as to enter one
Step optimizes signal to noise ratio.
Brief description of the drawings
Fig. 1 is passage THz wave modulating system structural representation of the present invention；
Fig. 2 is the exemplary plot of the integrated single channel terahertz wave modulator selectable unit structure of the present invention；
Fig. 3 is the structure Dual_A schematic diagrames of the integrated binary channels modulator of the present invention；
Fig. 4 is the integrated binary channels terahertz wave modulator structure Dual_B schematic diagrames of the present invention；
Fig. 5 is the CST analogue simulation figures of the integrated binary channels terahertz wave modulator structure Dual_B modulation effects of the present invention；
Fig. 6 is the schematic diagram of free space binary channels THz wave modulating system of the present invention；
Fig. 7 is the integrated single multi- passage terahertz wave modulator module diagram of the present invention.
Embodiment
By passage（Wave band）To be separated to the THz wave of incidence, make different passages（Wave band）THz wave via
Different optical paths leads to System Outlet, and then on the way to different passages（Wave band）THz wave carry out independent tune
System, so as to realize the independent loads of the modulated signal of each autonomous channel, and is finally solved the modulated multi-channel terahertz made
The problem of combining of ripple signal exports.
By introducing special THz wave spatial filter and polytype terahertz wave modulator, to build module
The autonomous channel of change（Wave band）Terahertz wave signal charging assembly, and realize THz wave using the ingenious combination of associated component
Multi channel signals modulation, and most completed the multichannel of signal loading at last（Wave band）Pass through system after THz wave combining
Delivery outlet exports.
Passage THz wave modulating system schematic diagram as shown in Figure 1, the system include：THz wave channel to channel adapter 1（T_
a）, THz wave passage combiner 2（C_a）, terahertz wave modulator 3-1（M_a）, terahertz wave modulator 3-2（M_b）, too
Hertz wave collimater and its switching device 4, module packaging cartridge 5-1,5-2,5-3（Including system auxiliary equipment and circuit）, it is integrated
Terahertz wave modulator 6（M_c）（Single multi- passage Terahertz modulator）, THz wave channel to channel adapter 7-1（T_b）, Terahertz
Ripple passage combiner 7-2（C_b）And clutter absorption plant 8, THz wave channel to channel adapter 1 and terahertz wave modulator 3-1
Left and right is placed in module packaging cartridge 5-1；THz wave channel to channel adapter 7-1, integrated terahertz wave modulator 6, THz wave lead to
Road combiner 7-2 left, center, rights are placed in module packaging cartridge 5-2；Terahertz wave modulator 3-2, THz wave passage combiner 2 are left
The right side is placed in module packaging cartridge 5-3；THz wave collimater and its switching device 4, THz wave channel to channel adapter 1, Terahertz
From bottom to up on the same axis, modules packaging cartridge is in this axis by ripple channel to channel adapter 7-1, terahertz wave modulator 3-2
Glazed thread can turn on；Terahertz wave modulator 3-1, THz wave passage combiner 7-2, THz wave passage combiner 2 are under
Supreme modules packaging cartridge can turn in this axis glazed thread on the same axis, axis width and THz wave collimater
Matching, at two axial lines, modules packaging cartridge other parts are light tight, have clutter suction in module packaging cartridge 5-2 and 5-3
Receiving apparatus 8.
Specific implementation method of the present invention is the THz wave from light source outputf o Turn into standard after THz wave collimater 4
Straight wave beam is input into the modulation module of system.The passage of the first order is realized by THz wave channel to channel adapter 1（Ripple
Section）Separation, it would be desirable to the THz wave of the passage 1 of modulationf 1 Selective reflecting is to terahertz wave modulator 3-1.It is and not anti-
The THz wave for its all band penetrated then is irradiated to THz wave channel to channel adapter 7-1 through THz wave channel to channel adapter 1.
And THz wave channel to channel adapter 7-1 then carries out second level passage（Wave band）Mask work, by THz wavef n Instead
It is mapped to THz wave passage combiner 7-2, other THz waves not reflectedf R Then pass through THz wave channel to channel adapter 7-
1 reaches terahertz wave modulator 3-2.
Terahertz wave modulator 3-1,3-2, and integrated terahertz wave modulator 6 is respectively to THz wavef 1 、f R , andf n Independent modulation is carried out, so as to load the respective modulated signal of each passage.
Brewed THz wavef 1 ’ Withf n ’ Output is combined by THz wave passage combiner 7-2.And then pass through
Cross THz wave passage combiner 2 and brewed THz wavef R ’ It is combined output.
And light spuious during multiplex or the THz wave for the wave band for being not allowed to output will be by clutter absorption plants 8
Absorb, to improve the signal to noise ratio of whole system.
Each device in system：
Preferably, THz wave channel to channel adapter 1 based on metamaterial spatial filter by being realized.Its
With THz wavef 1 Generation resonance coupling, and reflected.
Preferably, THz wave channel to channel adapter 7-1 based on metamaterial spatial filter by being realized.Its
Only and THz wavef n Generation resonance coupling, and reflected.
Preferably, terahertz wave modulator 3-1,3-2 are realized by automatically controlled galvanometer.
Preferably, terahertz wave modulator 6 is integrated to be realized by the automatically controlled terahertz wave modulator based on semiconductor.It is logical
Cross design different metamaterial structures can realize single channel THz wave modulate, or multi-channel terahertz ripple modulation.Its
The quantity of passage is mainly determined by metamaterial cellular construction species.When only a kind of cellular construction, appoint such as from Fig. 2
Choosing is a kind of（Black region indicates metal electrode, and white portion represents general substrate material）, when periodically deploy, device
Part belongs to single channel terahertz wave modulator, possesses the single channel terahertz wave modulator of some linkage wave bands in other words.And work as
Optional two kinds of different units structures in similar units structure, and after rational deployment and line, then device can realize binary channels
Operation, as shown in Figure 3（Wherein bias electrode B1, B2For Schottky electrode, forward bias modulator electrode is connect, both independent operations；
Electrode B0For Ohmic electrode, ground wire）.If multichannel, by that analogy.
Preferably, THz wave passage combiner 7-2 based on metamaterial spatial filter by being realized.Its
With modulated THz wavef n ’ Generation resonance coupling, and reflected.Simultaneously, it is allowed to modulated THz wavef 1 ’ By, and finally realize THz wavef 1 ’ Withf n ’ The effect of combining output.
Preferably, THz wave passage combiner 2 based on metamaterial spatial filter by being realized.Its with
Modulated THz wavef R ’ Generation resonance coupling, and reflected.Meanwhile allow modulated THz wavef 1 ’ Withf n ’ Pass through, and finally realize THz wavef 1 ’ 、f n ’ Andf R ’ Deng multichannel（Wave band）Combining output effect.
Preferably, THz wave collimater and its switching device 4 by THz wave focus lens group and its roller is housed
Packaging cartridge implement.When needing collimated incident THz wave, system is switched to the Working mould with THz wave condenser lens
Formula, by THz wave focus lens group come realize by incident light be changed into collimate directional light effect.As incident light is first
Collimated in preceding light path, then system passes through 4 roller switching device to the mode of operation without THz wave focus lens group.
Preferably, module packaging cartridge 5 be mainly by more than belonging to significant element device be packaged, and provide module with
Combined and spliced window and locking device between module.Meanwhile the control electricity of each modulation device is also laid in module packaging cartridge 5
Road, still can work independently when realizing that module is split.
Preferably, clutter absorption plant is implemented by the liquid absorbing material sealed.Such as it is sealed in sheet compression moulding compounds
Pure water.Inhale wave apparatus and be placed in each position for needing to inhale ripple in system, be not limited in the position shown in Fig. 1.Not
In the case of influenceing the stability of a system, packaging cartridge inwall can all be superscribed related clutter absorption plant.
A maximum feature of the invention is that each modulation module of system can be mutually combined.Such as by Fig. 1 systems
Module packaging cartridge 5-2 integrally after removal system, remaining part, which reconfigures, is turned into a binary channels THz wave modulation
System, as shown in fig. 6, now, (f R =f 0 -f 1 ).And the module packaging cartridge 5-2 being separated individually can then be based on as one
The single multi- passage Terahertz modulation module of integrated terahertz wave modulator, as shown in fig. 7, now,f n ； Input THz wavef 0 The output signal of the middle wave band modulated.
In addition, the present invention also has following two conveniences：A）Module packaging cartridge 5-2 in Fig. 1 and module packaging cartridge 5-3 it
Between add class such as module packaging cartridge 5-1 module.The now terahertz wave modulator M_a of new module’THz wave need to be replaced by
Passage combiner.Adding related new tunnel（Wave band）While, the THz wave passage combiner in a new module needs to make
Targetedly select, to meet that brewed each road terahertz wave signal is perfectly combined by correlation.System can be by so
The mode of stacking simply realizes the increase of port number very much, to enrich the channel resource of system.
On the basis of system can also be in Fig. 1, carried by being added between modulation module 5-2 and modulation module 5-3
The modulation module of integrated Terahertz modulator（Such as modulation module 5-2）, to continue the drivable channels number of extension system.Now collect
Into terahertz wave modulator M_c’It need to be realized by changing original cellular construction type or physical dimension to new wave band to be selected
Control.This new system possesses more passage control abilities because providing multiple integrated terahertz wave modulators, so as to hold
Receive more Tunable Channels（Wave band）.
The premise of the system work is that incident THz wave has to pass through collimation.Therefore, via THz wave collimater
And its incident THz wave after the collimation of switching device 4, by the by-passing of THz wave channel to channel adapter 1, by Terahertz
Ripple f 1 Terahertz wave modulator M_b is reflexed to, and allows the THz wave of its all band（f R + f n ）Pass through.
Parallel incident THz wavef 1 By terahertz wave modulator 3-1 reflection modulations.Only the angle of emergence meets specific angle
The THz wave of degreef 1 Window can just be passed through and reach next stage.The terahertz wave modulator 3-1 of signal is loaded with to terahertz
Hereby ripplef 1 Angle of reflection be controlled, obtain related brewed THz wave so as to realizef 1 ’ Purpose.
And THz wave（f R+ f n ）After reaching THz wave channel to channel adapter 7-1, by its branch, there is resonance to be coupled with it
The THz wave of effectf n It is reflected to integrated terahertz wave modulator M_c.And the THz wave of its all bandf R It is then smoothly logical
Cross.
Integrated terahertz wave modulator 6 is because it possesses single device multi-way contral function, therefore it can will incide its it
On THz wavef n Subchannel signal loading is carried out by way of electric control operation, so as to obtain what is modulatedf n ’ .Need
Bright, this kind of integrated multi-channel modulation device is, it is necessary to design in terms of carrying out channel separation.As shown in Figures 3 and 4（Black
Region representation metal electrode, white portion represent backing material）, the wave band that the cellular construction of its two kinds of passages is modulated is mutual
It is independent（Physical dimension determines its wave band controlled）, and coordination electrode is also separate.Fig. 4 structure Dual_B is
Special broached-tooth design is with the addition of on the basis of Fig. 3 structure Dual_A further to limit the interference of clutter.Fig. 5 is Fig. 4
The CST simulation results figures of dependency structure.There it can be seen that the modulator for the integrated binary channels THz wave that we design
Passage（Wave band）Independently modulated effect can meet practical application request.
THz wave passage combiner 7-2 is by modulated THz wavef n ’ THz wave passage combiner 2 is reflexed to,
Meanwhile it allows modulated THz wavef 1 ’ Pass through and reach THz wave passage combiner 2, will too so as to realize
Hertz wavef 1 ’ Withf n ’ The purpose of combining output.
Terahertz wave modulator 3-2 is by parallel incident THz wavef R Reflection (f R =f 0 -f 1 -f n ).Only angle of reflection meets
The THz wave of special angle, it just can smoothly reach lower THz wave passage combiner 2 and be reflected off out system outlet.Loading
The terahertz wave modulator 3-2 of signal is then to THz wavef R Angle of reflection be controlled, it is achieved thereby that to the passage
Terahertz wave modulation, obtains what is modulatedf R ’Signal.
Finally, the modulated THz wave that THz wave passage combiner 2 will have resonance coupling with itf R ’ Instead
It is mapped to system outlet.Meanwhile because resonance coupling does not occur in it with THz wave of its all band, so as to allow modulated terahertz
Hereby ripplef 1 ’ Withf n ’ Pass through and reach system outlet, it is final to realize THz wavef 1 ’ 、f n ’ Andf R ’ Deng multichannel（Ripple
Section）It is combined output.
So, THz wavef 1 、f n Andf R Just respectively by terahertz wave modulator 3-1,3-2, and 6 modulate and load
After signal, and classification multiplex is carried out by THz wave wave multiplexer 2 and 7-2, synthesize brewed terahertz wave signal（f 1 ’ + f n ’ + f R ’）, finally it is emitted from system outlet.
General principle, principal character and the advantages of the present invention of the present invention has been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the simply explanation described in above-described embodiment and specification is originally
The principle of invention, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, these changes
Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (8)
- A kind of 1. multi-channel terahertz ripple modulating system, it is characterised in that 3 independent modulation channels modules including being sequentially overlapped With THz wave collimater, left and right is placed in the first tune respectively for the first THz wave channel to channel adapter and the first terahertz wave modulator First independent modulation channels module of composition in channel module packaging cartridge processed；Second THz wave channel to channel adapter, integrated terahertz Hereby left, center, right is placed in the interior composition second of the second modulation channels module solely respectively for wave modulator, the first THz wave passage combiner Vertical modulation channels module；Left and right is placed in the 3rd modulation respectively for second terahertz wave modulator, the second THz wave passage combiner The 3rd independent modulation channels module of composition in channel module；THz wave collimater, the first THz wave channel to channel adapter, Two THz wave channel to channel adapters, the second terahertz wave modulator are from bottom to up on the same axis；First THz wave is modulated Device, the first THz wave passage combiner, the second THz wave passage combiner from bottom to up on the same axis, it is incident too Hertz wave foTurn into collimated wave beam after THz wave collimater, collimated wave beam is inputted in first independent modulation channels module The first THz wave channel to channel adapter separated, a branch of THz wave f1Selective reflecting is to the first terahertz wave modulator It is modulated to f1', another beam is transmitted in second independent modulation channels module, is entered by the second THz wave channel to channel adapter Row separation, a branch of THz wave fnReflection is modulated to f by integrated terahertz wave modulatorn', another beam fRIt is transmitted to the 3rd In independent modulation channels module, f is modulated to by the second terahertz wave modulatorR', first independent modulation channels module output Modulation after THz wave f1' and the modulation of the second independent modulation channels module after fn', pass through the first THz wave passage combiner It is combined and is output in the 3rd independent modulation channels module, then passes through the second THz wave passage combiner and the 3rd independence F after the modulation of modulation channels moduleR' be combined, it is unified from the 3rd independent modulation channels modular outlets output, second and the There is clutter absorption plant in three modulation channels module packaging cartridges.
- 2. multi-channel terahertz ripple modulating system according to claim 1, it is characterised in that 3 independent modulation channels Arbitrarily selected in module two of which independence modulation channels module be superimposed after, then with THz wave collimater form system.
- 3. multi-channel terahertz ripple modulating system according to claim 1, it is characterised in that 3 independent modulation channels An independent modulation channels module is arbitrarily selected to form system with THz wave collimater in module.
- 4. the multi-channel terahertz ripple modulating system according to any one in claims 1 to 3, it is characterised in that it is described too Hertz wave channel to channel adapter is the spatial filter based on Meta Materials, and resonance coupling occurs with the corresponding THz wave that need to be modulated.
- 5. the multi-channel terahertz ripple modulating system according to any one in claims 1 to 3, it is characterised in that described One and second terahertz wave modulator be automatically controlled galvanometer.
- 6. the multi-channel terahertz ripple modulating system according to any one in claims 1 to 3, it is characterised in that the collection It is the automatically controlled terahertz wave modulator based on semiconductor into terahertz wave modulator.
- 7. the multi-channel terahertz ripple modulating system according to any one in claims 1 to 3, it is characterised in that it is described too Hertz wave passage combiner is the spatial filter based on Meta Materials, and resonance coupling occurs with the corresponding THz wave that need to be modulated.
- 8. the multi-channel terahertz ripple modulating system according to any one in claims 1 to 3, it is characterised in that the tune Channel module packaging cartridge processed provides the combined and spliced window and locking device between module and module, the encapsulation of modulation channels module The control circuit of each modulation device is also laid in box, still can work independently when realizing that module is split.
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| CN106329147A (en) * | 2016-09-09 | 2017-01-11 | 南京大学 | Method of modulating amplitude of electromagnetic wave in free space by use of adjustable artificial electromagnetic super surface |
| CN112596122A (en) * | 2020-11-20 | 2021-04-02 | 博微太赫兹信息科技有限公司 | Terahertz imager detector array calibrating device |
| CN115145056B (en) * | 2022-08-10 | 2023-05-09 | 重庆邮电大学 | Terahertz modulator based on T-shaped and E-shaped super-surface resonance structures |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102520532A (en) * | 2011-12-19 | 2012-06-27 | 东南大学 | High-speed terahertz modulator and production method thereof |
| TW201423204A (en) * | 2012-12-04 | 2014-06-16 | Univ Nat Sun Yat Sen | Terahertz phase modulator |
| CN103984124A (en) * | 2014-05-15 | 2014-08-13 | 东南大学 | Multi-frequency response TeraHertz wave modulator |
| CN104280826A (en) * | 2014-10-31 | 2015-01-14 | 中国计量学院 | Four-wavelength terahertz wave wavelength division multiplexing/demultiplexing device of asymmetric structure |
| CN104678597A (en) * | 2014-07-25 | 2015-06-03 | 电子科技大学 | Graphene field effect transistor terahertz wave modulator and manufacture method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US8836446B2 (en) * | 2012-06-21 | 2014-09-16 | University Of Notre Dame Du Lac | Methods and apparatus for terahertz wave amplitude modulation |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102520532A (en) * | 2011-12-19 | 2012-06-27 | 东南大学 | High-speed terahertz modulator and production method thereof |
| TW201423204A (en) * | 2012-12-04 | 2014-06-16 | Univ Nat Sun Yat Sen | Terahertz phase modulator |
| CN103984124A (en) * | 2014-05-15 | 2014-08-13 | 东南大学 | Multi-frequency response TeraHertz wave modulator |
| CN104678597A (en) * | 2014-07-25 | 2015-06-03 | 电子科技大学 | Graphene field effect transistor terahertz wave modulator and manufacture method thereof |
| CN104280826A (en) * | 2014-10-31 | 2015-01-14 | 中国计量学院 | Four-wavelength terahertz wave wavelength division multiplexing/demultiplexing device of asymmetric structure |
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